Reg. No.

MANIPAL INSTITUTE OF TECHNOLOGY

Manipal University
I / II SEMESTER B.E. (E & C) DEGREE END SEMESTER EXAMINATION
NOV / DEC-2008
SUBJECT: BASIC ELECTRONICS (ECE- 101/102)

TIME: 3 HOURS MAX. MARKS: 50

Instructions to candidates
• Answer ANY FIVE full questions.
• Missing data may be suitably assumed.

1A. The Zener diode in the circuit of Figure 1A regulates at 50 V over a range of diode
currents from 5 to 40 mA. The supply voltage V=200V.
i) Calculate R to allow voltage variation from a load current I2 =0 up to IL max the
maximum possible value of IL. What is IL max ?
ii) If R is as in part (i) and the load current is set at IL = 25 mA,
What are the limits between which V may vary with out loss of regulation in the
circuit.
1 B. What are the components of currents in a semiconductor? Explain with suitable
expressions.
1 C. Draw and explain the input and output characteristics of a NPN transistor in CE
configuration and indicate the region of operation. (5+3+2)

2 A. Explain the operation of full wave bridge rectifier with capacitor filter, using
suitable circuit and waveforms. Also derive expressions for the ripple factor.
2 B. An FM has a carrier frequency of 90MHz and highest frequency of the FM signal
is 90.08MHz when modulated by a signal of frequency 5 KHz. Determine
i) Frequency deviation and carrier swing
ii) Modulation index
iii) Bandwidth
2 C. Simplify the Boolean functions and realize the simplified circuit using only
NOR gates.
ABC+AB’C+ABC’ (5+3+2)

3 A. A silicon diode has a reverse saturation current of 10 nA at 200 C. Find out the diode
bias voltage when the current is 3 mA. If the bias voltage is maintained constant what
is the current through the diode when the temperature is 1000 C ?
3 B. Explain the steps in 2’s complement subtraction. Subtract the decimal number 71
from 82 using 2’s complement method.
3 C. Prove that NAND gate is an Universal gate. (4+3+3)

ECE – 101/102 Page 1 of 2

4 A. Design a voltage divider biasing circuit using silicon transistor, given the
following parameters: Ic = 1 MA, VCE 6V, VCC = 12 v β = 100, Vbe = 0.7
4 B. Design an averaging amplifier using single op-amp to average 3 input voltages
V1, V2 and V3. Assume the gain required is 2.
4 C. What is meant by extrinsic semiconductors? What are the different types?
Explain how they are obtained. (4+3+3)

5 A. Show how op amp can be used as i) adder ii) Integrator.

Derive expressions for the outputs.
5 B. What is meant by break down? What are the different types? List and compare them.
5 C. Convert the following hexadecimal numbers to binary, Octal and decimal numbers
i) 144 ii) FA07 (4+3+3)

6 A. A carrier of 1 MHz with 400 W of power is amplitude modulated with a sinusoidal

signal of 2500 Hz. The depth of modulation is 75 %. Calculate the side band
frequencies, the bandwidth and the power in the side bands and the total power in the
modulated wave.
6 B. Draw the circuit of an S-R flip flop and explain its operation using truth table.
What is it’s draw back?
6 C. Draw the circuit diagram of a R-C coupled transistor amplifier with self bias. Explain
the function of each component. Also explain how the circuit amplifies a small
signal. (4+3+3)

ECE – 101/102 Page 2 of 2