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Low-Temperature Hydrogen Sensor: Enhanced Performance


Enabled through Photoactive Pd-Decorated TiO2 Colloidal Crystals
Ebtsam K. Alenezy, Ylias M. Sabri,* Ahmad E. Kandjani,* Dilek Korcoban,
Syed Sulthan Alaudeen Abdul Haroon Rashid, Samuel J. Ippolito, and Suresh K. Bhargava*
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ABSTRACT: The high demand for H2 gas sensors is not just limited to
industrial process control and leak detection applications but also
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extends to the food and medical industry to determine the presence of


various types of bacteria or underlying medical conditions. For instance,
sensing of H2 at low concentrations (<10 ppm) is essential for
developing breath analyzers for the noninvasive diagnosis of some
gastrointestinal diseases. However, there are major challenges to
overcome in order to achieve high sensitivity and hence low limit of
detection (LoD) toward H2. In this study, it is demonstrated that light-
assisted amperometric gas sensors employing sensitive layers based on
Pd-decorated TiO2 long-range ordered crystals can achieve excellent H2
sensing performance. This unique combination of materials and novel
layered structure enables the detection of H2 gas down to 50 ppm with
highly promising LoD capabilities. The sensor response profiles revealed
that the sensor’s signal-to-noise ratio was higher in the presence of light when operated with a 9 V bias (relative to other conditions
used), producing a LoD of only 3.5 ppm at an operating temperature of 33 °C. The high performance of the sensor makes it
attractive for applications that require low-level (ppm as opposed to conventional % levels) H2 gas detection. Most importantly, the
developed sensor exhibited high selectivity (>93%) toward H2 over other gas species such as CO2, C4H8O, C3H6O, CH3CHO, and
NO, which are commonly found to coexist in the environment.
KEYWORDS: light-assisted amperometric sensor, photocatalyst, long-range ordered crystals (LROCs), photocatalytic oxidation,
hydrogen gas sensing

H ydrogen has the potential to become the major source of


renewable energy because of its clean and potentially
exhaustible nature.1,2 The detection of low concentrations of
usually operated by skilled experts. In order to overcome the
issues associated with the mentioned techniques, researchers
are now focusing on developing highly sensitive and accurate
H2 is required because of its high flame propagation velocity, sensors based on solid-state transducers. Solid-state sensors
low ignition energy, and wide explosive concentration range.3,4 based on chemiresistive or amperometric mechanisms possess
Additionally, because of its inflammable and explosive nature, several advantages, such as excellent miniaturization potential,
safety issues must be addressed during its production, simple operation, low power consumption, fast measurement
transportation, and usage; thus, its detection at the 4% capacity, portability, and low cost.7,8 Chemiresistive sensors are
explosive limit and below is imperative to enhance the end-user based on measuring the resistance change on the sensitive layer
confidence in uptaking future H2-based fuel technologies.5 when interacting with the analyte of interest. Similarly, in the
From the medical sector perspective, the H2 gas expelled from case of amperometric gas sensors (AGSs), a fixed operating
human breath is currently being sampled and quantified for the voltage (bias) is used, and the change in the current flow when
noninvasive diagnosis of gastrointestinal diseases (GIDs). The gas species interact with the sensitive layer is used to correlate
breath of a person suffering from a GID has been reported to the target gas concentration.7 A specific advantage of
contain more than 20 ppm H2, which is more than twice the
level for a healthy person.2 The analytical techniques currently Received: July 8, 2020
employed in the laboratory to detect such low levels (ppm Accepted: November 20, 2020
range) of H2 are mostly based on gas chromatography/mass
spectrometry and proton-transfer reaction mass spectrometry.6
However, these techniques require the pretreatment of the
exhaled volatile organic compounds and the instruments are

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employing AGS-based sensors over the more traditional is formed with a uniform topology and minimal changes in
chemiresistive sensors is that different input bias potentials particle size, packing/ordering configuration over long ranges
can be applied to the AGSs to alter the surface electrical so that the optical properties of the layer can be optimized and
properties of the sensitive layer, thus resulting in the identical throughout the surface.23 Therefore, many efforts
modification of the gas adsorption properties of the surface. have been focused on developing sensors with uniform long-
The selectivity of AGSs toward a chosen analyte can also be range ordered crystals (LROCs) or photonic crystals (PCs) in
achieved by optimizing the electrode material to facilitate or order to achieve consistent response from across the
undergo the catalysis of selected reactions or by selecting an surface.24,25 Several techniques exist for the synthesis of
applied bias that thermodynamically favors either the oxidation surfaces formed of semiconductor-based LROCs, including
reaction or the reduction reaction for a specific gas specie.7 electron beam lithography and colloidal lithography pro-
The application of different biases can also provide the cesses.26 Of particular interest is colloidal lithography process
opportunity to control an additional input parameter that may for forming surfaces from ZnO27,28 and TiO2.29 The advantage
enhance the sensor performance via changing the Schottky of this method relates to the high surface area, large-scale
properties of the semiconductor materials and junctions that structure uniformity, and low-cost synthesis processes that can
typically form between the metallic contacts and the metal be achieved relative to the other available techniques.30 If
oxides forming the sensitive layer. Chemiresistive and AGS- correctly designed, the long-range order of the fabricated
based H2 gas sensing techniques have been extensively studied surfaces leads to the reproducible uniform excitation within
and make use of solid-state sensor platforms with sensitive different areas of the sensitive layer regardless of the excitation
layers commonly comprising metal oxide based semiconduc- light beam location on the surface. Therefore, such uniformity
tors such as titanium dioxide (TiO2), zinc oxide (ZnO), and is of particular importance when developing photoactive
tungsten trioxide (WO3).1,9−12 Although AGSs possess unique sensors.29,31 This patented technique that involves a unique
advantages, there are still issues that may affect their function combination of materials and novel layered structure enables
with regard to gas sensing applications. These relate to their the detection of H2 gas down to 50 ppm with highly promising
irreproducibility, nonselectivity, and high operating temper- limit of detection (LoD) capabilities.32
atures required for low analyte concentration analysis.13 In this work, TiO2 LROC surfaces were fabricated by
Working at low temperatures (140 °C) usually reduces any colloidal lithography in order to produce high surface area and
catalytic activity of the sensitive layer toward the gaseous uniformity that will assist the better detection of H2. To
analyte,53 partly because of the difficulty (i.e., lack of energy) in enhance the selectivity of AGSs toward the H2 analyte, the
overcoming the activation energy or the excitation of electrons choice of catalytic materials that are specific toward H2
to initiate the reaction; thus, another method to effectively oxidation becomes an important factor. Furthermore, the
enhance the reaction rate while maintaining low operating process of introducing the specific material needs to be
temperatures needs to be employed. Optical excitation of compatible, so decoration of a base the materials with catalysts
metal oxide semiconductor-based catalysts may enhance the such as noble metal (i.e., Pd, Pt, and Au) nanoparticles (NPs)
oxygen (second reactant) sorption capacity on the surface can be performed to synthesize the resulting sensitive layer.
through the separation of electron and hole pairs, resulting in Decorating sensitive layers with Pd has been reported to be
the excitation of the electron to the conduction band, thus very effective in enhancing the sensitivity and selectivity of
providing a higher number of electrons on the surface to AGSs toward H2 gas21,33 and also potentially lowering the
participate in the reaction. Light illumination is one of the best required operating temperature of the sensor and improving its
methods to lower the working temperature down to ambient response/recovery times.22,34 Among the different methods
conditions.1,13 Once H2 gas reacts with the adsorbed oxygen used to deposit Pd NPs, an electroless plating (ELP)
ions trapped via the excited electrons, it converts into products technique34−36 has several advantages related to its simplicity,
that commonly consist of H2O.14 This leads to a significant low cost, and formation of uniform NPs.37,38 The use of TiO2
change in layer conductivity as a result of the change in the thin films with various morphologies decorated with Pd NPs
number of charge carriers and enables the gas concentration and employed for H2 gas sensing under UV illumination is
measurement by monitoring the conductance change over expected to enhance the sensitivity and selectivity, which is
time.13 However, because of the insufficient selectivity and envisaged to enable the operation of the AGS at ambient
sensitivity, the real-time measurement of the biomarker temperature.39,40 Achieving an operating temperature close to
molecules in complex gas mixtures, such as the human breath room temperature (RT) is an important requirement (i.e.,
or industrial processes, is particularly challenging and improve- safety aspect, reduced energy consumption, compatibility, etc.)
ments need to be made in order to develop highly sensitive, for applications requiring H2 gas detection at low concen-
selective, and accurate sensors with metal oxide based trations. Thus, the developed light-assisted AGSs can serve as
semiconductor material sensors. The sensitivity can be excellent candidates for a wide range of applications and
improved by several approaches, including the modification process control in H2 processing industries.


of size, surface area, and type of the material used as the
sensitive layer.4,15,16 Among numerous materials used for EXPERIMENTAL SECTION
amperometric H2 gas sensors, for example, tungsten trioxide
(WO3),17,18 tin dioxide (SnO2), and TiO2 (an n-type Chemicals and Substrates. All chemicals utilized in the analysis
were purchased from Sigma-Aldrich and used as received. The
semiconductor with a wide band gap of ∼3.2 eV for anatase
interdigitated transducers were acquired from MicruX Technologies.
phase structure)19,20 have been widely studied because of their These sensors were fabricated using BOROFLOAT glass substrates
good stability in harsh environments, low toxicity, and stable and were rated for temperatures of up to 600 °C. The transducers
crystal structure at wide temperature ranges.14,21,22 When were formed with platinum interdigitated electrodes comprising 120
developing chemical-sensitive layers for applications, which finger pairs with 10 μm width and 5 μm spacing. The active sensing
utilize optical excitation, it is important that the sensitive layer zone was 3.5 mm in diameter. All substrates used in this study were

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Figure 1. Steps to produce Pd-decorated TiO2 LROC sensors: (a) sensor substrate, (b) PS LROCs, (c) PS size modified via plasma etching, (d)
TiO2 deposition via CVD and annealing process at 550 °C to form TiO2 LROCs, and (e) uniformly deposited Pd NPs through seeding and ELP
processes to obtain Pd-decorated TiO2 LROCs.

washed with acetone, ethanol, and Milli-Q water and then dried under Pd Decoration. An ELP method was used to decorate the TiO2
dry nitrogen before use. LROCs with Pd NPs using a two-step process. The first step was to
Synthesis Procedure. The Pd NP-decorated TiO2 LROC deposit a seed layer of Pd. This was achieved by dipping the PS TiO2
surfaces were developed on the AGS-based sensors using the LROC-coated substrates into a solution of tin chloride [2 mM of
following preparation methods. SnCl2 and 2.5 mL/L of HCl (32%) at RT] for 5 min, followed by 5
TiO2 LROCs. PS LROCs were formed on the sensor substrates by min of rinsing in Milli-Q water. The substrates were then dipped in
using the procedure described in our previous study.26 Briefly, a palladium salt solutions [2.5 mL of Pd (NO3)2 (10 wt %) and HNO3
standard Petri dish containing 3 mM of sodium hydroxide (NaOH) (70%) at RT] to be preseeded with palladium nuclei for 10 min,
solution was used to form a water/air interface. Polystyrene (20 μL) followed by another 5 min of rinsing in Milli-Q water. The procedure
with 1350 nm PS solution was prepared and injected into the surface, was repeated 10 times to form a reliable Pd seed layer. After the
followed by a 10 μL sodium dodecyl sulfate solution to make the seeding procedure, the substrates were transferred immediately into
interface more compact. The process resulted in a closely packed the ELP bath (2.2 mM of PdCl2, 20 mM of Na2EDTA, 40 mL/L of
hexagonal monolayer that was then transferred onto the sensor NH3·H2O (30%), 1.1 mL/L of N2H4 (1 M), and pH = 10) for a
substrates from the interface. After the surface was dried, the closely deposition period of 20 s at a constant temperature of 60 °C. Then,
packed PS LROC surface was etched by using a plasma cleaner the substrate was rinsed with Milli-Q water and dried overnight at 120
[Gatan model 950, RF 50 W, 10 mTorr, and a 10 standard cubic °C.
centimeters (sccm) gas flow for 20 min] under pure oxygen to reduce Gas Testing Setup. The current−voltage (I−V) curve was
the PS size and form a uniform nonclosely packed PS LROC surface. conducted to investigate the electrical properties of the TiO2 thin film
The particle size distribution was estimated with an image processing as well as TiO2 LROCs and Pd-seeded and Pd-decorated TiO2
program based on MATLAB reported in our previous work using the LROCs. Sensors were mounted in a custom-made Teflon test
Hough transform.41 chamber with an in-built optically polished quartz window lid for light
Chemical Vapor Deposition of TiO2. The chemical vapor activation and an internal ceramic heating bed. UV LED source
deposition (CVD) reaction explained in our previous work23 was (Edmund Optics) with a wavelength of 365 nm was used for
carried out for 10 min to obtain a thin layer of TiO2 coating on the PS photoactivation at a maximum intensity of 2024 μW·cm−2. The
LROCs. Briefly, in a 100 mL round bottom flask, 1 mL of titanium intensity of light was adjusted to be 108, 562, 945, 1496, and 2024
(IV) isopropoxide (TTIP) was added, and the assembly was kept at a μW·cm−2 by varying the applied bias. The light intensity was
constant temperature of 68 °C under the inert atmosphere using N2 calibrated using a PM16-140 power meter from THORLABS. The
gas. The sensor substrates and other electrodes were placed in a sensors were exposed to H2 concentrations ranging from 50 to 500
specific manner with side facing down toward the TTIP solution in ppm while maintaining the total gas flow rate at 200 sccm with the
the flask. Water vapor, generated in a separate Dreschel bottle, was balance being dry air. A computer-controlled multichannel mass flow
transferred to the flask assembly using 10 sccm of dry N2 as the carrier controller (MFC) system was utilized to control the flow rate and
gas passing through 100 mL of Milli-Q water, thus initiating the CVD concentration of hydrogen to the sensor chamber. The sensors were
coating of TiO2 on the sensor substrate at a constant temperature. To operated in the AGS mode by applying different biases (0.1, 3, 6, and
obtain a 68 nm thick layer of TiO2, the deposition was performed for 9 V) with and without light illuminated. The operating temperature of
a period of 10 min before the reaction was ceased by stopping the the sensor was maintained at 33 °C for the duration of all tests;
water vapor flow rate, introducing dry N2, and instantly removing the however, care was taken to stabilize the baseline of the sensor when
heat source to allow the flask (containing TTIP) to cool down to RT. adjusting the applied operating bias of the sensor to another value.
The coated substrate was then removed from the flask with a pair of This was achieved by exposing the sensor to dry air at 200 sccm under
tweezers. Thereon, the polystyrene template was removed and the specific lighting condition being studied for 2 h before conducting
crystalline hollow TiO2 LROCs were formed by a one-step annealing any tests toward H2 gas. The response magnitude was defined as the
process at 550 °C for 1 h in air. The thickness of the deposited TiO2 difference between the output current under the H2 gas exposure
layer was determined by first placing a control substrate (a polished period (Ig) and that in air (Ia): ΔI = Ig − Ia.16,42 The sensor responses
thin film of silicon wafer) with the sensor device during the CVD (R) were defined as R (%) = Rg − Ra/Ra × 100, where Ra is the
process. Half of the control sample area was covered with photoresist, current of the sensor in the presence of dry air and Rg is the current
which was removed with its deposited TiO2 layer through a lift-off after the sensor exposed to H2.33 The selectivity of the sensor was
process (acetone etching) following the CVD process. The step determined by exposing the sensors toward five industrial relevant gas
change on the substrate thus represented the equivalent thickness of species/concentrations such as carbon dioxide (500 ppm), methyl
TiO2 deposited on the PS LROCs. ethyl ketone (26.1 ppm), acetone (25 ppm), acetaldehyde (3034

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Figure 2. SEM images of (a) hexagonal close-packed and (b) non-close-packed polystyrene monolayers, (c) TiO2 deposited via CVD for 10 min
on non-close-packed polystyrene, and (d) TiO2 LROCs annealed at 550 °C for an hour.

ppm), and nitric oxide (2000 ppm). The sensors were also tested annealing process simultaneously crystallized the amorphous
against 20% relative humidity. TiO2 material deposited on the LROCs (Figure 1d).
Material Characterization. X-ray photoemission spectroscopy Thereafter, theTiO2 LROCs were decorated with uniform Pd
(XPS) analysis was used to study chemical states by using a thermo K-
Alpha XPS equipped with an Al Kα monochromated X-ray radiation NPs through the ELP process (Figure 1e).
source. The samples were prepared on titanium-coated silicon Surface Characterization. The low- and high-magnifica-
substrates. All spectra were background-corrected using the Shirley tion SEM images of hexagonal close-packed and non-close-
algorithm, and all binding energies (BEs) were aligned considering packed PS monolayer are shown in Figure 2a,b, respectively.
adventitious carbon (C 1s) having a BE of 285 eV. A FEISEM Quanta The SEM images with the same magnifications were obtained
and a FEI Nova NanoSEM was used to conduct scanning electron to analyze the particle size distribution of the PS templates
microscopy (SEM) characterization. All images were collected using
an accelerating voltage of 5 kV and a beam current of 50 pA. The D8
before and after etching. As shown in Figure S1 (Supporting
Discover Micro X-ray diffraction (XRD) instrument equipped with a Information), the synthesized PS microspheres had an average
Cu Kα radiation source (40 kV, 40 mA) and a general area detector diameter of 1350 nm with small variance in diameter of 32 nm.
diffraction system was utilized for studying the crystal structure on After 20 min of etching, the size of the PS microsphere
prepared samples. The thickness of the prepared TiO2 layer on the diameter was uniformly decreased to 842 nm in average with a
standard sample was measured by using a surface profiler (TencorP- variance of 52 nm, thus forming a uniform nonclosely packed
16+). For thickness measurements, half of the silicon wafer substrates
LROCs of PS. The SEM images of the nonclosely packed
were covered with photoresist before CVD and after CVD deposition,
and the deposited TiO2 on the photoresist was removed with a lift-off TiO2/PS LROCs after 10 min of CVD and after the annealing
process to form the step edge for the thicknesses to be measured process at 550 °C in air for 1 h are shown in Figure 2c,d,
(control sample).23 For optical property measurements, quartz respectively. It can be observed that the structure and distances
substrates were coated on one side with a TiO2 thin film, PS closely between the colloids did not significantly change during the
packed and nonclosely packed, TiO2 LROCs before and after annealing process. As the polystyrene degrades in temperatures
annealing, Pd-seeded and Pd-decorated TiO2 LROCs, which were higher than 418.6 °C,43 the LROCs after the annealing process
placed in a cuvette and characterized using a UV−vis spectropho-
tometer (Varian Cary 60) in transmittance mode from the 200 to 800 form a hollow TiO2 microshell structure. The hollow nature of
nm wavelength range. the TiO2 microshell structure was confirmed by the image


presented in the Supporting Information, Figure S2. Following
RESULTS AND DISCUSSION the CVD process, the thickness of the deposited TiO2 layer
The schematic in Figure 1 shows the fabrication procedure of was measured on the control sample by a thickness
Pd-decorated TiO2 LROCs on the sensor substrates. Briefly, profilometer in order to determine the TiO2 thickness that
the sensor substrate (Figure 1a) was covered with PS LROCs was deposited on the LROC samples. The surface profile
to form a uniform mask via colloidal lithography (Figure 1b). presented in Figure S3 in the Supporting Information
The PS LROCs were then uniformly etched by a plasma confirmed the thickness of the TiO2 film to be 68 ± 11 nm
cleaner to modify the PS particle size (Figure 1c). The next following the CVD and calcination processes. The standard
step involved using CVD to deposit the uniform film of TiO2 deviation was calculated using five random points on the step
over the LROC-covered substrate. The substrate was then edge of the deposition after removal of the photoresist mask on
annealed at 550 °C to remove the polystyrene template. The the control sample as detailed in the Experimental Section.
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Figure 3. (a) SEM images and EDS spectra for initial Pd seeds that were deposited over TiO2 LROC structures and (b) SEM image and EDS
spectra for the 20 s electroless deposition of Pd grown on the Pd seeds.

Figure 4. XPS spectra: (a) survey spectra of the TiO2 LROCs, Pd-seeded TiO2 LROCs, and Pd-decorated TiO2 LROCs; high-resolution (b) Ti 2p;
(c) O 1s, and (d) Pd 3d core-level spectra.

The SEM images of the seeded and decorated Pd NPs on any visible Pd NPs because of the small particle size. The Pd-
the TiO2 LROCs via ELP process are shown in Figure 3. The decorated TiO2 LROCs in Figure 3b shows uniform Pd
Pd-seeded TiO2 LROCs in Figure 3 (a1 and a2) did not show particles deposited over the TiO2 LROC surface. Figure 3 (b1
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Figure 5. UV−vis transmittance spectra of (a) quartz substrate coated with the TiO2 thin film; (b) PS closely packed and nonclosely packed
LROCs; (c) TiO2 LROCs before and after annealing; and (d) TiO2 LROCs as well as Pd-seeded and Pd-decorated TiO2 LROCs.

and b2) shows the Pd grains from the ELP having relatively process.46 The BE of Ti 2p3/2 at 458.7 eV indicates the
more Pd NPs than the seeded sample and which can lead to presence of Ti4+ oxidation states.45 However, the O 1s has two
higher H2 permeability and superior thermal stability. To separate BEs of 529.8 and 531.7 eV, which are related to the
further confirm the formation of Pd NPs and study the formation of Ti−O and surface hydroxyl group in titania
impurity contents introduced during the synthesis procedure, structure, respectively.45 The deconvolution of Pd 3d spectra
all samples were studied using energy-dispersive X-ray showed three oxidation states for Pd. Considering Pd 3d5/2
spectroscopy (EDS). The EDS results indicate that titanium, deconvolution, a small peak appearing at 335.1 eV
oxygen, and palladium are present in the sample, which corresponded to the metallic Pd, while the other two peaks
confirms the successful deposition of Pd on the TiO2 LROCs appearing at 335.7 and 341.0 can be vindicated by a partial
with no impurities being present. The percentage of Pd in the oxidation of Pd to PdO structure and formation of Pd/PdO
Pd-seeded TiO2 LROC sample was determined to be 5 at % core shells. Gracia-Espino et al. have shown that the presence
from EDS data. The Pd content was found to increase to 28 at of the third peak can indicate that a Pd oxide shell (Pd5/2,
% in the sample that underwent both seeding and 20 s 335.1 eV) is present at the surface and the Pd−PdO interfacial
electroless deposition of Pd. The TiO2- and Pd−TiO2-based layer at the core that is depleted in oxygen, thus explaining the
LROC samples were also formed on quartz substrates and presence of the third smaller peak at 337.6 eV.47
annealed at 550 °C for independent analysis. Quartz was used The UV−vis transmittance spectra were carried out for all
so that the samples could also undergo UV−vis analysis. These samples using quartz substrates (as per XRD samples). Figure
samples were characterized using XRD and the data is shown 5a shows the titania thin film which was directly deposited on a
in Figure S4 in the Supporting Information. The distinct peaks quartz substrate without any PS colloids or LROCs involved.
were indexed for (101), (004), (200), and (105) of the TiO2 The results indicate an absorption edge at 380 nm (3.26 eV),
crystal anatase44 and (111) for Pd NPs.45 The Pd-seeded TiO2 which is associated with the formation of a wide band gap
LROCs did not show any visible Pd peaks in XRD and was TiO2 layer. In Figure 5b, the transmittance spectra of PS-based
postulated to be due to the small particle size and Pd content LROCs are presented. As a result of formation of a PC, the
that was present on the structure. The Pt peak observed in the transmittance shows a wave feature in the spectra which is
EDS spectra is attributed to the Pt electrodes present on the attributed to light coupling into periodic structure of the
AGS device. nanoarray.48 After PS plasma etching process, the size of PS is
XPS characterization was performed to examine the reduced and the distance between the PS colloids is increased,
oxidization states of each element on the structure surface thus forming a nonclosely packed LROC template and
and to establish any possible surface contamination that may resulting in a different type of transmittance wave profile.
have occurred during the synthesis procedure. Figure 4a shows After the deposition of TiO2, the wave pattern of the PS is
the survey spectra of TiO2 LROCs, Pd-seeded TiO2 LROCs, eliminated because of the formation of the secondary material
and Pd-decorated TiO2 LROCs. The XPS data confirmed that on the PS LROCs. However, the profile of the TiO2-based
no surface contamination was present at the surface of the LROCs before calcination and after calcination is different.
samples. The high-resolution XPS spectra for Ti 2p, O 1s, and The hump shape in the deposited TiO2, over the LROCs, prior
Pd 3d BE associated with the 20 s Pd-decorated TiO2 LROCs to annealing comes from the PS cores. The TiO2 LROCs after
are shown in Figure 4b−d, respectively. Sn 3d5/2 was presented annealing show a similar absorption edge as a TiO2 thin film.
in the spectra because of the intermediate Pd seeding However, compared to the thin film control sample, the TiO2
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Figure 6. (a) Normalized response profiles of Pd-decorated TiO2 LROCs toward different concentrations of H2 at an operating temperature of 33
°C under different bias conditions; (b) calibration curve obtained from response profiles; (c) sensor response magnitudes toward 500 ppm of H2
operating under different light intensities and dark condition at an operation bias of 9 V; and (d) Pd-decorated TiO2 LROC sensor response profile
toward 500 ppm of H2 gas under 2024 μW·cm−2 of light stimulus and dark conditions operating at a bias of 9 V.

LROCs have been reduced in transmittance intensity because 500 ppm (see the Supporting Information, Figure S7). A
of light scattering. A red shift in the absorption spectrum in reduced bias (9 < bias ≤ 3 V) deems the sensor unusable
both Pd-seeded and Pd-decorated TiO2 LROCs has been under dark conditions and the sensor response toward H2
obtained.49−51 increases with increasing applied bias. Furthermore, the sensor
Sensing Performance. In order to explore the possibility did not produce any response toward H2 (under light nor dark
of the developed materials as highly selective and sensitive conditions) under a bias of 0.1 V (see the Supporting
materials toward H2 gas sensing, they were employed as Information, Figure S6). The data indicates that the highest
sensitive layers on AGSs. Furthermore, light-assisted AGS- sensor response is obtained from light-assisted H2 sensing
based H2 sensing tests were performed in order to achieve low- under the highest applied potential of 9 V. The response
temperature gas sensing. The sensing performance of the magnitude for the developed Pd-decorated TiO2 LROC sensor
developed sensor was tested by exposing it to H2 gas with highest tested bias (9 V) under a light illumination of 365
concentrations of 50, 75, 100, 200, 300, 400, and 500 ppm nm with an intensity of 2024 μW·cm−2 was linear (R2 = 0.99)
at an operating temperature of 33 °C. The H2 sensing in the concentration range tested with a calculated sensitivity
performance of the TiO2 thin film (control sensor) and TiO2 of S = 6.2 μA/ppm (see Figure 6b). The LoD of the developed
LROCs with and without Pd decoration was tested using a Pd-decorated TiO2 LROC-based sensor toward H2 was
computer-controlled gas delivery setup. The normalized determined using the 3 standard deviations of the sensor
response of Pd decorated is presented in Figure 6a (the response output toward a blank sample (dry air), as explained
sensor response profile for the Pd-decorated TiO2 LROC- in our previous study.37 The LoD of the developed Pd-
based sensor is shown in Figure S5) (Supporting Information). decorated TiO2 LROC sensor toward H2 decreased when
It is noteworthy that the control sensors (i.e., the plain TiO2 increasing the applied bias at 33 °C. That is, the LoD under
thin film, TiO2 LROCs, and Pd-seeded TiO2 LROCs) did not light with a 9 V bias was calculated at 3.5 ppm, which is much
produce any detectable response toward the H2 concentrations lower when compared with 3 and 6 V bias conditions (see the
tested, even after the application of different biases (0.1, 3, 6, Supporting Information, Table S1). The results obtained at
and 9 V) with and without light illuminated at 33 °C. This lack near RT are impressive, given that previous studies have
of readable response was attributed to the control sensors’ successfully reached an LoD of <10 ppm with good selectivity
relatively higher resistance and lack of affinity toward H2 at the and sensitivity toward H2 gas, however at temperatures above
test conditions used (see the Supporting Information, Figure 100 °C.28,52 In other studies where the LoD has been reported
S6). In addition, the control sensors did not respond toward below 10 ppm at RT, there have been challenges or no reports
H2 at 33 °C.33,39 The calibration curves for the developed Pd- in terms of selectivity of the sensor toward H2 gas.53−56
decorated TiO2 LROC sensor under various bias potentials are Findings suggest that the sensor response magnitude in the
shown in Figure 6b. The data indicates that the sensor presence of light with a 9 V bias was better and has less
response under light illumination was higher than in dark baseline noise and better signal-to-noise ratio (SNR = 72),
conditions under a 9 V bias potential, which increased from which also results in better detection limit when compared to
∼55 to ∼91% with an increase in H2 concentration from 50 to the SNR at a similar sensing condition in the absence of light
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Figure 7. Dynamic response profile of the developed Pd-decorated TiO2 LROC sensor during the memory test at 33 °C at a bias of 9 V (a) under
dark and (b) under UV light illumination (2024 μW·cm−2). Analysis graphs show the CoV of the developed sensor toward each H2 gas
concentration detected following different H2 concentrations (c) with and (d) without light.

[SNR = 0.006, see Table S1 (Supporting Information)]. The standard deviation to the average response magnitudes of the
increase in the baseline noise in the absence of light at 9 V bias sensor toward each hydrogen concentration by utilizing the
was attributed to the reduced number of charge carries as formula [CoV (%) = σ/x̅ × 100% and repeatability (%) =
portrayed in an earlier analysis.57,58 Both response (t90‑res) and 100% − CoV (%)]. The results presented in Figure 6d indicate
recovery (t90‑rec) times were calculated for the sensor under the that the developed Pd-decorated TiO2 LROC sensor exhibit a
conditions of 500 ppm H2, from 3 to 9 V bias, under light good repeatability of 99.9% in both the absence and presence
illumination, at 33 °C, whose results are presented in Table S2. of UV light illumination at an operating bias of 9 V.
The t90‑res value refers to the time needed for the sensor signal Memory Effect. In order to determine whether the
to reach 90% of the overall change while t90‑rec refers to the developed sensor would be affected by a previous sensing
time required to return to 90% of the baseline signal. The event, a memory test sequence was developed with five
outcomes suggested that the t90‑res and t90‑rec values for the different hydrogen gas concentrations (dubbed as a, b, c, d, and
developed Pd-decorated TiO2 LROC sensor increased with e), which are a = 100, b = 200, c = 300, d = 400, and e = 500
increasing applied bias. The t90‑res and t90‑rec values for 500 ppm ppm. Each concentration was repeated for a minimum of four
H2 at 9 V bias and 33 °C under light were found to be 45 and times and followed at least once by each of the other four
24 s, respectively. At a lower bias of 3 V, t90‑res and t90‑rec
tested concentrations. Figure 7a,b shows the sensor response
improved to 15 and 18 s, respectively, however with the
profiles during the memory test at 33 °C without and with
drawback to lower sensitivity. The developed sensor was tested
light illumination, respectively, while the analysis graphs
by exposing 500 ppm H2 over five sequential pulses under
(response magnitudes) of the same test are, respectively,
different light intensities and dark with a 9 V bias and an
operating temperature of 33 °C (Figure 6c). The data imply presented in Figure 7c,d. Interestingly, the memory effects
that increased light intensity resulted in the production of were found to be significant under UV light when quantified
relatively more electron−hole pairs that enables the formation through the CoV calculations presented in Table1. However, it
of photo-induced oxygen ions, thus increasing the response can be observed from Figure 7c (bar graph representation)
magnitude toward H2 gas. that the memory effects in the absence of light were significant
The developed sensor (Pd-decorated TiO2 LROCs) at an compared with the memory effect under UV light illumination
operating temperature of 33 °C was investigated by exposing in Figure 7d (bar graph representation). It is the evident that
500 ppm of H2 concentration with a 9 V bias to five repeated even the small memory effects (<1%) observed under dark
cycles under dark and UV light (365 nm at 2024 μW·cm−2) conditions had improved under UV light illumination (<0.5%).
illumination. The coefficient of variance (CoV) of the That is, the sensor exhibited similar response magnitudes for
developed Pd/TiO2 LROC-based AGS was calculated for the every repeated H2 gas concentration examined regardless of
different H2 concentrations as reported in the literature.59,60 the exposure sequence to the sensor. This was the case even
That is, the CoV was calculated by taking the ratio of the when the lowest H2 gas concentration (100 ppm) was tested
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Table 1. Memory Test Results Quantified through CoV impacted by different biases. When biases are applied, the
Calculations of the Response Magnitude of the Developed semiconductor band will flow electrons into the metal, which
Sensor (Pd-Decorated TiO2 LROCs) toward Different enhances the sensor performance and increases the response
Hydrogen Gas Concentrations at an Operating magnitude. In addition, the response magnitude increased
Temperature of 33 °Ca when the bias is increased from 0.1 to 9 V, which could be a
result of operating the AGS in the diffusion-controlled mode
Repeatability (%)
rather than kinetically controlled mode of the electrode.7,61
H2 concentration (ppm) A B C d e Under this condition (where the rate of reaction ≫ rate of
dark 99.2 99.5 99.0 99.3 99.1 diffusion), the rate of diffusion of the reactant toward the
light 99.8 99.9 99.7 99.5 99.7 electrode surface is much slower than the rate of reaction and
a now the limiting current is controlled by the diffusion of the
Four pulses were used for each CoV calculation (i.e., n = 4)
analyte. Thus, the combination of overcoming the energy
following the event of highest H2 gas concentration (500 barrier and achieving a high reaction rate is postulated to be
ppm). the reasons for the relatively higher sensor response outputs at
Mechanism. The sensor data confirms that decoration of relatively higher bias applied. Furthermore, when H2 interacts
Pd on the TiO2 LROCs played a major role in the catalytic with the material Pd-decorated TiO2 LROCs under UV light,
conversion of H2 on the sensitive layer. The Pd-decorated electron−hole pairs will be excited and separated at the
TiO2 LROCs showed impressive sensing performance depletion layer near the surface (eq 1).Then, the hole will react
(compared to most reports in literature as presented in with the adsorbed oxygen (eq 2) at the interface and reduce
Table 2) when employed as a sensitive layer for light-assisted the thickness of the depletion layer which consumes the holes
amperometric H2 gas sensing. In contrast, the pristine TiO2 and decrease the resistance and increase the current of TiO2
thin film, TiO2 LROCs, and Pd-seeded TiO2 LROC (low Pd LROCs (as compared with the result under dark condition),
content)-based control sensors produced no readable sensor which will result in an equilibrium shift that will favor the
output when exposed toward H2 gas in any of the mentioned reaction toward consuming more electrons, and thus, electrons
conditions. Pd NPs can also offer a reaction pathway which can will react with the oxygen molecules and trap them on the
reduce the activation energy and then enhance the reaction sensor surface (eq 3).1,13,42,61
rate, sensitivity, selectivity, and reliability.14 Pd NPs can also
hv = e− + h+ (1)
serve as a H2 sorbent that can feed H2 to the TiO2/Pd interface
for the reaction to occur,1 which can be explained by spillover
effect explained elsewhere.22 When oxygen (in dry air) O2(ads)− + h(hv)+ → O2(gas) (2)
interacts with the developed Pd-decorated TiO2 LROC surface
on the sensor, oxygen captures the electrons from the surface O2(gas) + e(hv)− → O2(ads)− (3)
of the sensitive layers’ conduction band to form ionic species,
such as O−, O2−, and O2−.39 This results in the resistance of Regarding a previously proposed mechanism for the Pd/
the sensor to increase as the depletion layer increases.22 The TiO2 interface, Pd is one of the best catalytic materials for
well-dispersed Pd NPs encourage an increased gas response by hydrogen, which is also well known to act as a hydrogen
creating active sites (electronic sensitization) because the collector. When hydrogen is injected, H2 molecules dissociate
Schottky barrier between Pd NPs and TiO2 LROCs is a better into active hydrogen species by Pd NPs. The active hydrogen
dissociation catalyst than TiO2 alone.14 Similarly, the Schottky species can move toward the interface between Pd NPs and
junction will also occur between the n-type TiO2 LROCs and TiO2 LROCs to form Pd hydride (PdHx), which reacts with
platinum IDT sensor electrodes.61 The generated Schottky the adsorbed ionic oxygen and injects electrons into TiO2
barrier height prevents the flow of electrons from TiO2 LROCs LROCs. This results in an increased conductivity and decrease
to the metals (Pd NPs and Pt electrodes) without assistance in the height of the Schottky barrier that can be modeled via
from an external energy source to elevate their energy above the following possible reactions14,63
that of the Schottky barrier height.14,62 Hence, the required
bias voltage for operation needs to be reached. The materials x
Pd + H 2 → PdHx
exhibit different adsorption balances on the surface when 2 (4)

Table 2. Summary of Hydrogen Sensors that Employ TiO2 as the Sensitive Layer as Reported in the Literature

temp response detection range response/recovery


TiO2 structure preparation method catalyst (°C) (%) (ppm) times ref
mesoporous film Anodization 140 20−1000 5−125 s 63
thin film sputtering 340 99 300−10,000 1 min 64
nanotube anodization 25−150 8−20 100−5000 30 min 11
nanotubes electrochemical anodization Pd 25 8.5 10,000−50,000 2−1.5 min 39
nanotube anodization Pt, Pd 290 50−90 10−100,000 10−20 s 65
nanotubular on SiO2/Si electrochemical anodization Pd 180 91 100−5050 30−10 s 14
thin film DC reactive magnetron Pd, PdO 150 90 150−30,000 21
sputtering
nanofiber electrospinning Pd 150 40.8 6000−10,000 25−1 s 22
nanorods hydrothermal Pd 200 250−2000 33
LROCs CVD Pd 33 91 50−500 45−24 s present work

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Figure 8. Developed sensor’s selectivity data at (a) dark condition and (b) under UV light (365 nm, 2024 μW·cm−2) illumination.

x x x gas was more dominant, rendering the sensor selective toward


PdHx + O(ads)2 − → Pd + H 2O + e−
4 2 4 (5) H2 gas. The response observed from interferent gas species
tested is not surprising as the combination of bias and UV
Selectivity toward H2. The Pd-decorated TiO2 LROC irradiation would have promoted all gas species to undergo
sensor’s selectivity performance toward H2 was tested by chemical reaction/sorption on the catalytic sensitive layer;
exposing the sensor to H2 as well as different interfering gas however, the conditions has favored H2 reaction to be the most
species at concentrations that are common in most industries. dominant event though it was exposed at a low 500 ppm level.


The tests were conducted both with and without light at an
operating temperature of 33 °C in the presence of air. These CONCLUSIONS
gas species included CO2 (500 ppm), C4H8O (26.1 ppm),
Pd NPs were used to decorate TiO2 LROC-sensitive layers
C3H6O (25 ppm), CH3CHO (3034 ppm), and NO (2000
deposited directly on the AGS device. The sensor was studied
ppm), most of which were examined at the maximum
with/without UV light illumination and different bias
concentrations expected in industrial processes. Figure 8a,b
conditions in a bid to improve the sensitivity and the
shows the sensor’s response when exposed to each gas species
selectivity of the sensor toward H2 gas near RT. The LoD of
balanced in air. The results show that the response of the
the developed Pd-decorated TiO2 LROC sensor toward H2
developed sensor toward H2 is much higher when compared to
decreased with increasing applied bias. An LoD of 3.5 ppm was
other gas species tested, both in the absence and presence of
achieved with a 9 V bias under light illumination, which was
light because of selective adsorption of H2 on Pd NPs (the
much lower when compared to 6 and 3 V bias conditions. This
normalized response profiles of the TiO2 LROCs are presented
was attributed to increased rate of reaction and electron flow
in the Supporting Information, Figure S8).39 The developed
due to employing Pd NPs as the dissociation catalyst and
sensor showed no significant sensitivity toward other gas
application of external stimuli (i.e., bias and light illumination),
species on repeated occasions and is postulated to be due to
which would have increased the H2 reaction rate on the
the specific selectivity property of Pd NPs toward H2 gas as
catalytic sensitive layer. The data indicated that the approach
explained previously in the mechanism discussion section.22
allowed for low hydrogen concentrations (50 ppm) to be
Furthermore, it was observed that both selectivity and
detected with high selectivity at near RT (33 °C). The ability
sensitivity can be controlled by the presence/absence of UV
of the developed sensor to detect low ppm levels makes it
light-assisted sensing, indicating that the developed sensor can
applicable to many applications including breath analysis
be used to detect a wide range of hydrogen concentrations
(noninvasive diagnostics), industrial leak tests, and process
(low ppm to high % levels) for various applications. The lowest
control.


selectivity experienced by the sensor was through the exposure
of humidity, resulting in an acceptable 93% selectivity in the ASSOCIATED CONTENT
presence of UV light illumination. However, under dark
conditions, the sensor was observed to produce a readable *
sı Supporting Information

response magnitude toward CO2, however still with an The Supporting Information is available free of charge at
impressive output of 98% selectivity toward H2 gas. When https://pubs.acs.org/doi/10.1021/acssensors.0c01387.
the metal oxide (TiO2 LROCs) sensor is operated in the NP size distribution: (a) close-packed PS LROCs and
humid atmosphere, the adsorption of water vapor and (b) non-close-packed PS LROCs, SEM image after
molecular oxygen releases electrons into the depletion layer annealing to form TiO2 LROCs, thickness profile for
and results in decreased resistance and increased current on TiO2 LROCs, XRD pattern of TiO2 LROCs before and
the oxide surface, which potentially changes the baseline after annealing, Pd-seeded TiO2 LROCs and Pd-
current of the sensor when dry air is changed to humid air.14,66 decorated, high dynamic response of Pd-decorated
The physisorption of H2O molecules on the oxide surface TiO2 LROC sensor toward different concentrations of
could also hinder hydrogen chemisorption and hence H2 at an operating temperature of 33 °C; (a) 3 V bias;
dissociation.67,68 The response magnitude of the sensor toward (b) 6 V bias; and (c) 9 V bias under 2024 μW·cm−2 of
500 ppm H2 and toward 0.5 g/m3 H2O is shown in Figure S8d light; dynamic response of the sensor’s TiO2 thin film,
(Supporting Information). Under UV irradiation, the sensor TiO2 LROCs, Pd-seeded TiO2 LROCs, and Pd-
response for humidity was much higher (7%) compared to the decorated TiO2 LROCs under a bias of 0.1 V at 33
dark condition (0.4%) (see Figure 8a,b) Furthermore, it is °C with different H2 concentrations; normalized
observed that the sensor produced response toward other response of a developed sensor (Pd-decorated TiO2
interferent gas species tested; however, the response toward H2 LROCs) with hydrogen and various gases with a 9 V
J https://dx.doi.org/10.1021/acssensors.0c01387
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bias and an operating temperature of 33 °C; H2, in irritable bowel syndrome. Aliment. Pharmacol. Ther. 2005, 22,
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rmit.edu.au nanostructured metal oxides as chemo-resistive gas sensors. Mater.
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Suresh K. Bhargava − Centre for Advanced Materials and Amperometric sensing in the gas-phase. Anal. Chim. Acta 2005, 549,
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Industrial Chemistry (CAMIC), School of Science, RMIT highly-ordered TiO2 nanotubes for a hydrogen sensor. Int. J.
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https://pubs.acs.org/10.1021/acssensors.0c01387 dichalcogenides. Microchim. Acta 2018, 185, 213.
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The authors declare no competing financial interest.


nanowires. Sens. Actuators, B 2013, 186, 90−95.
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ACKNOWLEDGMENTS W. Absorption spectral response of nanotextured WO3 thin films with
The authors acknowledge the RMIT Microscopy and Micro- Pt catalyst towards H2. Sens. Actuators, B 2009, 137, 115−120.
analysis Facilities (RMMF) and RMIT MicroNano Research (19) Krško, O.; Plecenik, T.; Roch, T.; Grančič, B.; Satrapinskyy, L.;
Facilities (MNRF) for the assistance received from their staff Truchlý, M.; Ď urina, P.; Gregor, M.; Kús,̌ P.; Plecenik, A. Flexible
and for providing microscopy facilities. E.K.A. is thankful to Al highly sensitive hydrogen gas sensor based on a TiO2 thin film on
Jouf University for a full scholarship. A.E.K. acknowledges polyimide foil. Sens. Actuators, B 2017, 240, 1058−1065.
RMIT University for the Vice-Chancellor Fellowship. The (20) Jun, Y.-K.; Kim, H.-S.; Lee, J.-H.; Hong, S.-H. High H2 sensing
behavior of TiO2 films formed by thermal oxidation. Sens. Actuators, B
authors also acknowledge RMIT’s Enabling Capability Plat-
2005, 107, 264−270.
forms (ECP) for the Translation and Impacts fund awarded in (21) Samransuksamer, B.; Jutarosaga, T.; Horprathum, M.;
2019.


Wisitsoraat, A.; Eiamchai, P.; Limwichean, S.; Patthanasettakul, V.;
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