BDX33, BDX33A, BDX33B, BDX33C, BDX33D

NPN SILICON POWER DARLINGTONS

● Designed for Complementary Use with

BDX34, BDX34A, BDX34B, BDX34C and
TO-220 PACKAGE
BDX34D (TOP VIEW)
● 70 W at 25°C Case Temperature
B 1
● 10 A Continuous Collector Current
C 2
● Minimum hFE of 750 at 3V, 3 A
E 3

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT
BDX33 45
BDX33A 60
Collector-base voltage (IE = 0) BDX33B V CBO 80 V
BDX33C 100
BDX33D 120
BDX33 45
BDX33A 60
Collector-emitter voltage (IB = 0) BDX33B VCEO 80 V
BDX33C 100
BDX33D 120
Emitter-base voltage VEBO 5 V
Continuous collector current IC 10 A
Continuous base current IB 0.3 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 70 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W
Operating free air temperature range TJ -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Operating free-air temperature range TA -65 to +150 °C

NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

  

AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BDX33 45
BDX33A 60
Collector-emitter
V(BR)CEO IC = 100 mA IB = 0 (see Note 3) BDX33B 80 V
breakdown voltage
BDX33C 100
BDX33D 120
VCE = 30 V IB = 0 BDX33 0.5
VCE = 30 V IB = 0 BDX33A 0.5
VCE = 40 V IB = 0 BDX33B 0.5
VCE = 50 V IB = 0 BDX33C 0.5
Collector-emitter VCE = 60 V IB = 0 BDX33D 0.5
ICEO mA
cut-off current VCE = 30 V IB = 0 TC = 100°C BDX33 10
VCE = 30 V IB = 0 TC = 100°C BDX33A 10
VCE = 40 V IB = 0 TC = 100°C BDX33B 10
VCE = 50 V IB = 0 TC = 100°C BDX33C 10
VCE = 60 V IB = 0 TC = 100°C BDX33D 10
VCB = 45 V IE = 0 BDX33 1
VCB = 60 V IE = 0 BDX33A 1
VCB = 80 V IE = 0 BDX33B 1
VCB = 100 V IE = 0 BDX33C 1
Collector cut-off VCB = 120 V IE = 0 BDX33D 1
ICBO mA
current VCB = 45 V IE = 0 TC = 100°C BDX33 5
VCB = 60 V IE = 0 TC = 100°C BDX33A 5
VCB = 80 V IE = 0 TC = 100°C BDX33B 5
VCB = 100 V IE = 0 TC = 100°C BDX33C 5
VCB = 120 V IE = 0 TC = 100°C BDX33D 5
Emitter cut-off
IEBO VEB = 5V IC = 0 10 mA
current
VCE = 3V IC = 4 A BDX33 750
VCE = 3V IC = 4 A BDX33A 750
Forward current
hFE VCE = 3V IC = 3 A (see Notes 3 and 4) BDX33B 750
transfer ratio
VCE = 3V IC = 3 A BDX33C 750
VCE = 3V IC = 3 A BDX33D 750
VCE = 3V IC = 4 A BDX33 2.5
VCE = 3V IC = 4 A BDX33A 2.5
Base-emitter
VBE(on) VCE = 3V IC = 3 A (see Notes 3 and 4) BDX33B 2.5 V
voltage
VCE = 3V IC = 3 A BDX33C 2.5
VCE = 3V IC = 3 A BDX33D 2.5
IB = 8 mA IC = 4 A BDX33 2.5
IB = 8 mA IC = 4 A BDX33A 2.5
Collector-emitter
VCE(sat) IB = 6 mA IC = 3 A (see Notes 3 and 4) BDX33B 2.5 V
saturation voltage
IB = 6 mA IC = 3 A BDX33C 2.5
IB = 6 mA IC = 3 A BDX33D 2.5
Parallel diode
VEC IE = 8A IB = 0 4 V
forward voltage
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

  

AUGUST 1993 - REVISED SEPTEMBER 2002
2 Specifications are subject to change without notice.
 BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS

thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.78 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W

resistive-load-switching characteristics at 25°C case temperature

†
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ton Turn-on time IC = 3 A IB(on) = 12 mA IB(off) = -12 mA 1 µs
toff Turn-off time VBE(off) = -3.5 V RL = 10 Ω tp = 20 µs, dc ≤ 2% 5 µs
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

  

AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE

vs vs
COLLECTOR CURRENT COLLECTOR CURRENT
TCS130AF TCS130AH
50000 2·0

VCE(sat) - Collector-Emitter Saturation Voltage - V

TC = -40°C tp = 300 µs, duty cycle < 2%
TC = 25°C IB = IC / 100
TC = 100°C
hFE - Typical DC Current Gain

10000
1·5

1000
1·0

TC = -40°C
VCE = 3 V TC = 25°C
tp = 300 µs, duty cycle < 2% TC = 100°C
100 0·5
0·5 1·0 10 0·5 1·0 10
IC - Collector Current - A IC - Collector Current - A

Figure 1. Figure 2.

BASE-EMITTER SATURATION VOLTAGE

vs
COLLECTOR CURRENT
TCS130AJ
3·0
TC = -40°C
VBE(sat) - Base-Emitter Saturation Voltage - V

TC = 25°C
TC = 100°C
2·5

2·0

1·5

1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5 1·0 10
IC - Collector Current - A

Figure 3.

  

AUGUST 1993 - REVISED SEPTEMBER 2002
4 Specifications are subject to change without notice.
 BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

vs
CASE TEMPERATURE
TIS130AB
80
Ptot - Maximum Power Dissipation - W

70

60

50

40

30

20

10

0
0 25 50 75 100 125 150
TC - Case Temperature - °C

Figure 4.

  

AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
Mouser Electronics

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