Professional Documents
Culture Documents
N-Channel JFET
Product Summary
VGS(off) (V)
v 8
Features
D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 100 mA
Benefits
D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification
Applications
D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches
Description
The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz. Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products in TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N4416/2N4416A/SST4416 data sheet.
TO-226AA (TO-92)
Top View
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70238.
2N3819
Specificationsa
Limits Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Currentd Drain Cutoff Current Drain-Source On-Resistance Gate-Source Voltage Gate-Source Forward Voltage V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS VGS(F) IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 2 nA VDS = 15 V, VGS = 0 V VGS = 15 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = 8 V VGS = 0 V, ID = 1 mA VDS = 15 V, ID = 200 mA IG = 1 mA , VDS = 0 V 0.5 2 25 35 3 10 0.002 0.002 20 2 150 2.5 0.7 7.5 pA W V 8 20 2 2 V mA nA mA
Symbol
Test Conditions
Min
Typb
Max
Unit
Dynamic
Common-Source Forward Transconductance d Common-Source Output Conductanced Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltaged gfs gos Ciss Crss en f = 1 kHz VDS = 15 V VGS = 0 V f = 100 MHz f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 MHz V V, VDS = 10 V, VGS = 0 V, f = 100 Hz 2 1.6 5.5 5.5 25 2.2 0.7 6 50 8 4 pF nV Hz mS 6.5 mS
Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms, duty cycle v2%. d. This parameter not registered with JEDEC.
NH
Typical Characteristics
20 I DSS Saturation Drain Current (mA)
500
100
16
IDSS
400 rDS
80
12
gfs
300
60 gos
200
40
100
20
2N3819
Typical Characteristics (Contd)
100 nA
10
10
Output Characteristics
VGS(off) = 2 V
15
Output Characteristics
VGS(off) = 3 V
8 I D Drain Current (mA) I D Drain Current (mA) VGS = 0 V 6 0.2 V 0.4 V 4 0.6 V 0.8 V 1.0 V 1.2 V 1.4 V 8
0 0 2 4 6
10
Transfer Characteristics
VGS(off) = 2 V VDS = 10 V
10
Transfer Characteristics
VGS(off) = 3 V VDS = 10 V
125_C
2N3819
Typical Characteristics (Contd)
10 g fs Forward Transconductance (mS)
10
8 TA = 55_C 6 25_C
8 TA = 55_C 6 25_C
125_C
4 125_C 2
100
80
60
40
VGS(off) = 2 V
60
20 3 V
3.0
2.4
VDS = 0 V
1.8 VDS = 0 V
2 VDS = 10 V
1.2
0.6
VDS = 10 V
2N3819
Typical Characteristics (Contd)
100
Input Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source
100
Forward Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source
bis 10 gis
10 (mS) (mS)
gfs bis 1
0.1 100
200
500
1000
0.1 100
200
500
1000
f Frequency (MHz)
f Frequency (MHz)
Reverse Admittance
10 TA = 25_C VDS = 15 V VGS = 0 V Common Source
10
Output Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source bos
brs 1 (mS)
1 (mS)
gos
0.01 100
200
500
1000
0.01 100
200
500
1000
f Frequency (MHz)
f Frequency (MHz)
20
20
(nV / Hz)
16
12
e n Noise Voltage
0 0.1
10