PD - 95177

IRF7303PbF
l Generation V Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual N-Channel Mosfet S1
1 8
D1
l Surface Mount 2 7
VDSS = 30V
G1 D1
l Available in Tape & Reel
3 6
S2 D2
l Dynamic dv/dt Rating
l Fast Switching G2
4 5
D2 RDS(on) = 0.050Ω
l Lead-Free
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and SO-8
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 10V 5.3
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.9
A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.9
IDM Pulsed Drain Current  20
PD @TA = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
V GS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt ‚ 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance Ratings

Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient„ ––– 62.5 °C/W

10/6/04
IRF7303PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.050 VGS = 10V, ID = 2.4A ƒ
RDS(ON) Static Drain-to-Source On-Resistance Ω
––– ––– 0.080 VGS = 4.5V, ID = 2.0A ƒ
VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
g fs Forward Transconductance 5.2 ––– ––– S VDS = 15V, ID = 2.4A
––– ––– 1.0 VDS = 24V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 25 VDS = 24V, V GS = 0V, TJ = 125 °C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = - 20V
Qg Total Gate Charge ––– ––– 25 ID = 2.4A
Q gs Gate-to-Source Charge ––– ––– 2.9 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 7.9 VGS = 10V, See Fig. 6 and 12 ƒ
td(on) Turn-On Delay Time ––– 6.8 ––– VDD = 15V
tr Rise Time ––– 21 ––– ID = 2.4A
ns
td(off) Turn-Off Delay Time ––– 22 ––– RG = 6.0Ω
tf Fall Time ––– 7.7 ––– RD = 6.2Ω, See Fig. 10 ƒ
D
LD Internal Drain Inductance ––– 4.0 –––
Between lead tip
nH
and center of die contact G

LS Internal Source Inductance ––– 6.0 –––

S

Ciss Input Capacitance ––– 520 ––– VGS = 0V

Coss Output Capacitance ––– 180 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 72 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 2.5

(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse G

––– ––– 20
(Body Diode)  p-n junction diode. S

V SD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 1.8A, V GS = 0V ƒ

t rr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = 2.4A
Q rr Reverse RecoveryCharge ––– 56 84 nC di/dt = 100A/µs ƒ
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )

‚ ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, „ Surface mounted on FR-4 board, t ≤ 10sec.
TJ ≤ 150°C
 IRF7303PbF

1000 VGS
1000 VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , Drain-to-Source Current (A)

I , Drain-to-Source Current (A)

6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100

4.5V
4.5V
10 10
D

D
20µs PULSE WIDTH 20µs PULSE WIDTH
TJ = 25°C TJ = 150°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
I D = 4.0A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

TJ = 25°C 1.5

TJ = 150°C
(Normalized)

1.0

0.5

V DS = 15V
20µs PULSE WIDTH VGS = 10V
10 0.0
A A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
 IRF7303PbF

1000 20
V GS = 0V, f = 1MHz I D = 2.4A
C iss = Cgs + C gd , Cds SHORTED VDS = 24V
C rss = C gd

V GS , Gate-to-Source Voltage (V)

800 C oss = C ds + C gd
16
C, Capacitance (pF)

Ciss
600 12

Coss
400 8

200 Crss 4

FOR TEST CIRCUIT

SEE FIGURE 12
0 A 0 A
1 10 100 0 5 10 15 20 25
VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

ID , Drain Current (A)

10

100us
TJ = 150°C
TJ = 25°C 10

1
1ms

TA = 25 ° C
TJ = 150 ° C
10ms
VGS = 0V Single Pulse
0.1 A 1
0.0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100
VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF7303PbF

5.0 RD
V DS

VGS
4.0 D.U.T.
RG
ID , Drain Current (A)

+
- VDD
3.0
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0

Fig 10a. Switching Time Test Circuit

1.0
VDS
90%

0.0
25 50 75 100 125 150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Ambient Temperature
Fig 10b. Switching Time Waveforms

100

D = 0.50
Thermal Response (Z thJA )

0.20
10
0.10

0.05

0.02
PDM
0.01
1
SINGLE PULSE t1
(THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7303PbF

Current Regulator
Same Type as D.U.T.

50KΩ
QG
12V .2µF
10V .3µF

QGS QGD +
V
D.U.T. - DS

VG VGS

3mA

Charge
IG ID
Current Sampling Resistors

Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
 IRF7303PbF

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by R G +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 13. For N-Channel HEXFETS
IRF7303PbF

SO-8 Package Outline

Dimensions are shown in milimeters (inches)
INCHES MILLIMET ERS
DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BAS IC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0° 8° 0° 8°

e1 K x 45°
A
C
y

0.10 [.004]
8X b A1 8X L 8X c

0.25 [.010] C A B 7

FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O
A S UBS T RAT E.

3X 1.27 [.050] 8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

EXAMPLE: T HIS IS AN IRF7101 (MOSFET )

DAT E CODE (YWW)
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAST DIGIT OF T HE YEAR
XXXX WW = WEEK
INTERNAT IONAL F7101 A = ASS EMBLY SIT E CODE
RECT IFIER LOT CODE
LOGO
PART NUMBER
 IRF7303PbF

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.