EEE 235

Electronics – I

Course Teacher: Mohammad Mahmudul Hasan Tareq

Assistant Professor, EEE (CUET)
Electronics – I
Reference Book
➢ Electronic Devices – Thomas L Floyd

➢ Microelectronic Circuits – Adel S. Sedra, Kenneth C. Smith

This presentation slide only contains the overview of the related topics.
Students are advised to take decent class notes and read thoroughly from
the prescribed text books
Introduction
➢ Diode is a two terminal semiconductor device which allow alternating current to
flow only in one direction

➢ Its use in rectifier is the most common application

➢ A diode is made from a small piece of semiconductor material

➢ Half is doped as a p region and half is doped as an n region

❑ The p region is called the anode

❑ The n region is called the cathode

Introduction
Forward Bias
➢ Forward bias is the condition that allows current through the p-n junction
Forward Bias
Forward Bias
Forward Bias
➢ Forward Current: The current that flow through a
diode in forward bias condition

➢ Forward Knee Voltage: The forward voltage at

which the current through the junction starts to
increase rapidly
Reverse Bias
➢ Reverse bias is the condition that essentially prevents current through the diode
Reverse Bias
Reverse Bias
➢ Reverse Current: The small current that flow
through a diode in reverse biased condition

➢ Break-down Voltage: The minimum reverse

voltage at which p-n junction breaks down with
sudden rise in reverse current
Reverse Bias
➢ The extremely small reverse current in a reverse-biased diode is due to the
minority carriers from thermally generated electron-hole pairs

➢ Peak inverse voltage: The maximum reverse voltage that a diode can withstand
without destroying the junction
Forward and Reverse Bias
Diode Characteristic Curve
➢ A semiconductor diode current can be defined by the following equation

ID = IS [e(qV/KT) – 1]

Where,
ID = Diode current
IS = Reverse saturation current
q = Charge of electron
V = Voltage applied across the diode
K = Boltzmann’s constant
T = Temperature
Diode Characteristic Curve
➢ A semiconductor diode current can be defined by the following equation

ID = IS [e(qV/KT) – 1]
Silicon Diode Vs Germanium Diode
Silicon Diode
➢ Higher PIV (1000V)
➢ Higher Current rating
➢ Wider temperature range (200ᵒ C)

Germaniun Diode
➢ Lower PIV
➢ Lower current rating
➢ Narrower temperature range (100ᵒC)
Temperature Effect
➢ In forward region threshold voltage will
decrease with increase of temperature
and vice-versa

➢ The reverse saturation current Is will

just about double in magnitude for
every 10°C increase in temperature
DC or Static Resistance
➢ Applying DC voltage, it will result in an operating point on the characteristic curve
and will not change with time. That point is called Q point

➢ The resistance of the diode at that operating point is called DC resistance

AC or Dynamic Resistance
➢ AC input will move the Q point up and down of the characteristics and thus
defines a specific change in current and voltage as shown in Fig.
Average Resistance
➢ If the input signal is sufficiently large to produce a broad swing such as indicated
in Fig, the resistance associated with the device for this region is called the
average ac resistance
Resistance
Diode Model – Ideal Diode
Forward Reverse
Diode Model – Practical Diode
Forward Reverse
Diode Model – Complete Diode
Forward Reverse
Math Problem
Math Problem
Math Problem