Professional Documents
Culture Documents
tw
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IC
Moore s Law
Scalingnm
WaferDevice
PizzaIC
IC
681218
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00.611.1Furnace33.1
Plasma33.3PVD7IC
00.10.52
wet bench833.2
CVD4Dry Etcher
6Polish5
Photolithography11.2Ion Implant
201112
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ASMCentrotherm
Keith HsuCarsten WinterJ. J LinPaxon ChenJenson ChenSteffen Wiebicke
Yachun ChenJack WangChung LinVic HsiehOxford InstrumentsFrancis
ChewEmberton Robert
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20119
20119
NDL
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20119
CMP
CMP
CMP
20119
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Axcelis Tech.
20119
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iii
0.1
0.2
0.2.1
0.2.2
0.3
11
11
0.4
12
0.5
23
0.6
29
33
Diffusion
35
Furnace
36
1.1.1
37
1.1.2
42
1.1.3
Recipe
55
1.1.4
59
1.1
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1.2
Ion Implant
68
1.2.1
69
1.2.2
74
1.2.3
90
1.2.4
93
1.2.5
95
1.2.6
97
Wet Bench
2.1
103
104
2.1.1
105
2.1.2
107
2.1.3
108
110
2.2.1
Organic Contamination
110
2.2.2
112
2.2.3
112
2.2.4
115
118
2.3.1
118
2.3.2
119
Wet Bench
122
2.4.1
Wet Bench
122
2.4.2
Wet Bench
128
2.4.3
129
133
2.2
2.3
2.4
vi
101
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Thin Films
3.1
135
Plasma
136
3.1.1
136
3.1.2
RF Generator
146
3.2
148
3.2.1
PECVD
148
3.2.2
ALDMBEMOCVD
155
182
3.3.1
182
3.3.2
185
3.3.3
187
195
Dry Etcher
197
198
4.0.1
Dry Etcher
198
4.0.2
Design Factors
199
200
4.1.1
200
4.1.2
Triode RIE
202
4.1.3
203
4.1.4
204
4.1.5
4.1.6
206
4.1.7
212
4.1.8
214
3.3
4.0
4.1
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4.2
218
4.3
219
4.4
221
4.4.1
222
4.4.2
222
4.4.3
224
4.4.4
232
250
250
Photolithography
253
5.1
254
5.2
255
5.2.1
Coater
256
5.2.2
Developer
262
Exposure System
264
5.3.1
Optical Lithography
265
5.3.2
E-beam Lithography
268
274
5.4.1
Immersion Lithography
275
5.4.2
277
5.4.3
Multi-Beam Lithography
279
280
282
Polishing
283
284
4.5
5.3
5.4
5.5
6.1
viii
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6.2
286
6.2.2
288
6.2.3
291
6.2.4
292
6.3
299
6.4
302
6.5
306
307
IC
311
312
FEOL
312
BEOL
323
CMOS
329
329
C-V curve
337
338
341
8.1
342
8.2
342
8.2.1
342
8.2.2
343
8.2.3
Oscilloscope
351
8.2.4
359
360
7.1
7.2
8.3
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8.3.1
Power Supply
360
8.3.2
Temperature Controller
361
8.3.3
365
8.3.4
368
8.3.5
Solenoid Valve
370
8.3.6
Sensor
372
8.3.7
PLC
377
382
383
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0.2
0.3
0.4
0.5
0.6
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0.1
0.1
1. Manufacture Execution
System, MES
2. InterlockBy-pass
3. P e r s o n a l
Protection Tool, PPT
4. Process Chamber
ChamberSOP
Cycle Pump Purge
5.
6.
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7.
8.
9. 2 4 V D C
110VAC220VAC
10.
10mA20mA
30mA40-50mA
11.
0.2
0.2.1
0.1
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0.1
0.1ABEA
B
DANGERBWARNINGC
CAUTIONDE
0.2
0.2
0.3
0.3
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0.4
0.4
0.5
0.5
0.6
X-Rays
0.6
0.7
0.7
0.8
0.8
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(02)2705-5066
0.9
0.9
0.10
0.10
0.11
0.11
0.12
30cm
0.12
0.13
0.13
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0.2.2
0.14
X-Ray
0.14
0.15
0.15
0.16
C l 2 B 2H 6 W F 6
0.16
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0.3
Sensor
CPU
RAMROM
Actuator
0.17
L
sol
IN
(OUT)
CPU
INPUT
OUTPUT
0.17
Regulator System
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Regulator System
26
PCWindows
Follow Up System
0.18
X-Y table
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Motion
Controller
Driver
Motor
0.18
0.19
X-Y table
Motion
Controller
Driver
Motor
0.19
Actuator
0.20
10
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Motion
Controller
Driver
Motor
0.20
Actuator
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CPU
0.21
ADC
0.21
DAC
DAC
ADC
0.21
0.4
0.22
12
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0.22
0.23
Load/Unload Port Module
Transfer ModuleProcess Module
Circulation ModuleDrain ModuleExhaust
Module
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0.23
0.23
Load/Unload Port Module
Fab68
1225CasetteLot
8 Pod; 12 Foup
PickIndexerPlace
Unload Port
14
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Module
LoadlockMainframe
Transfer ModuleLoadlock
Pick
IndexerPlace
0.24
Robot
Indexer
0.24
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Transfer Module
0.25CVD
PVDCluster
Mainframe Process
ChamberLoadlockAligner
Cool Down ChamberTransfer Chamber
Robot
Platform
Stage
OperatorRecipeMapping
Slit Valve
Slit Valve
Process Chamber
Cool Down
Chamber
Loadlock
Cluster
16
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0.25
Transfer Module0.26
Robot
Aligner
Cool DownSlit Valve
Interlock
0.26
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Process Module
0.27Cluster
Single Wafer
0.27Cluster
0.28
Process ChamberMainframe
Process ChamberSlit
ValveProcess
ChamberSlit
Valve
Process Chamber
18
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RFBais
Process
ChamberProcess
Chamber
RF
0.28
0.29
Robot
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RF
0.29
Circulation Module
0.30
(1)Pump
(2)Filter
(3)
Heat Exchanger
SiO 2
Lots
0.30
20
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0.31
Heat Exchanger
Hcat
exchanger
pump
0.31
0.32
18
PCW
0.32
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Drain
ModuleExhaust Module
0.33
Pump
Local Scrubber
Central Scrubber
General
Exhaust
local scrubber
central scrubber
0.33
0.34
Wet Scrubber
PH
22
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wet scrubbqer
0.34
HF
0.5
24
Function
BlockSchematic
0.35 CVD0.36
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0.35CVD
0.36
0.40
24
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0.37
0.37
0.38
GS1c13A24V/13.0AS-320-24
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DC24V
PC24
NC24FU14cFU15c2A
PC241NC2414.1A
4.1A41A4
1A0.39
3.3C3
3C
0.38
26
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0.39
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AND gate
AND gate
OR gate
OR gate
NOT OR gate
NOT gate
28
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SCR
Traic
PNP
NPN
0.40
0.6
SemiconductorConductor
InsulatorDopant
DopingConductivity
0.1
Compound Semiconductor
Light Emitting Diode, LED
Solar cellIntegrated Circuit, IC
Si
Silicon WaferSubstrateGe
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DeviceSi
1. Si25%
Ge
2. 1414938.5
4. Oxygen
Silicon Dioxide, SiO 2
77.1Complementary Metal-OxideSemiconductor, CMOS7.2CMOS
SiO 2
Reliability
GeO 2GeO 2
5. 3900 cm 2/v-s
1450 cm2/v-s
Magnesium,MgZinc,ZnCadium,Cd
Boron,BAluminum,AlGallium,GaIndium,In
Carbon,CSilicon,SiGermanium,GeTin,SnLead,Pb
Nitrogen,NPhosphorus,PArsenic,AsAntimony,Sb
Sulfur,SSelenium,SeTellurium,Te
0.1
30
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Feature Size
Critical Dimension, CD
Channel Length, L0.42
Scaling
SpeedProcess
Technology Node
ICCDCD
Moore
s LawGordon MooreIntel
Generation0.72
0.2
Vin
IC
Vss
NMOS
Vdd
PMOS
Vout
Sead
Ingot
WAT
0.41IC
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0.42MOSFET
Generation
1992
1995
1997
1999
2002
2005
2007
2010
CD
0.5m
0.35m
0.25m
0.18m
0.13m
90nm
65nm
45nm
0.2CD
Scaling
1. Idsat
2.
3.
4. WaferChipDie
5. Ioff
6.
0.3
6''
8''
12''
18''
0.3
32
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0-1
Clean Room
Class XClass X
ft 3 0.5 m
ParticleXClass 1Class 100
Defect Density, DD
cm 2, cm -2DD
Poisson Model0-2Y
%Dcm 2Acm 20-2
Wafer
0-1
Y=exp-DA
0-2
Operator
1. Kilian 2006
3. 1997
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4. 2001
5. 2001
6.
7. H. Xiao, Introduction to Semiconductor Manufacturing Technology ,
Prentice Hall, New Jersey, 2001.
8. M. Quirk and J. Serda, Semiconductor Manufacturing Technology ,
Prentice Hall, New Jersey, 2001.
9. J. D. Plummer, M.D. Deal and P.B. Gruffin, Silicon VLSI TechologyFundamental, Practice and Modeling, Prentice Hall, New Jersey, 2000.
10. CMOS
11. VLSI
34
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A
Abnormal Signal
121
Abrasive299
Absorption153, 223
Acceleration Column82
Acquire352, 356
Activation48, 315
Active Area51, 314
Actuator8, 10, 11, 365
Adhesion312, 321
Adhesion Layer324, 325, 327
Air Actuated Valve41
Aligner16, 17, 268, 269,
271
Alkali Metal Ions330
Aluminum, Al183, 284
Arc Chamber76, 77
Arc Slit79
Arcing63, 87
Argon, Ar188
Arrhenius Equation
224
Arsenic, As315
Asbestos40
Aspect Ratio183, 193, 245
Aspect-Ratio Dependent Etching, ARDE
230
Astigmatism272
Atmospheric Pressure, AP37, 42
Atmospheric, Atm137
Atomic Layer Deposition, ALD
148, 155
Auto Turning363
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217, 277
Channel31, 45, 72, 85, 319
Channel Length31, 45
Channeling Effect72
75, 86
Chemical Amplification Resist, CAR
Break Through233
Breakdown96, 139
256
Chemical Beam Expitaxy
162
Chemical Mechanical Polishing, CMP
116
Bunch83, 84
Burn Box40
Chilled DIW111
Chip32
Chlorine, Cl331
Capacitive-Coupling Plasma
201, 202
Caro's Acid-H2SO4111
Citric Acid298
Clean Room33
Cassette150, 190
Cluster Chamber189
Cluster Tool151
Central Scrubber
22
311, 312
384
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Collection Optics277
Crucible182
Collimator193
Cryo pump162
Collision136, 215
C-V curve329,
Colloidal Silica299
337
Complementary Metal-Oxide-
Semiconductor, CMOS
30
Concave181
Dark SpaceSheath144
Condense51, 277
DC Acceleration82
Condenser Optics277
Conditioner292
Conductance92
222, 237
Deep Ultraviolet Light, DUV
265
Conductor29
Deep Well75
Contact Resistance115
Deprotonation295
Convex181
Derjaguin-Landau-Verwey-Overbeek,
Cool Down16, 17
DLVO294
Desorption153, 223
Corrosion248, 304
107
307, 382
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DI Water Vaporizer
Dopant Ion76
Dopant Prole72
161
Die32, 53, 54, 198, 217, 218,
222, 233, 240, 323, 325, 329, 332
Dielectric32, 53, 54, 198, 217,
218, 222, 233, 240, 323, 325, 329,
332
Doping29, 236
Dose Controller88
Double Pattern274
Drain13, 22, 23, 45, 75, 91, 92,
124, 318, 319, 320
Dresser292
198, 222
Drive-in36, 46, 48
221
Dry Etching Processes
197, 221
Dry Oxidation42
342
Dilute HF314
Dual-Damascene Process
250
326
Dishing303
Dual-Damascene198, 222
Dislocation48, 167
217
Dissociation136, 138
Dissolved Air Flotation
271
Effusion Cell162
298
Divot236
Elastic136
76, 315
Dopant Activation
48, 315
Electrochemical Plating
325
386
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Electromagnetic Force80
Extinction Index179
Electromagnetic Lens272
Extraction Electrode75, 79
Electromigration, EM191,
324
Electron Beam Evaporation
182
274
Extreme Ultraviolet, EUV
274, 277
204, 212
Electron Gun, E-Gun185
Faraday Cup88, 89
Feedback9, 200
Electrophoresis295
Feed-Through Connectors83
Electrostatic Scanning84
Filament76
210
Energy Gap, Eg30, 278
EPO Signal121
Erosion303, 304
329
Flat Band109
Evaporation182
Follow Up System9
Evaporation Source182
Forming Gas48
Four-Point Probe93
Excimer Laser265
Excitation136
312
Fumed Alumina299
Fumed Silica299
Function Block23
Furnace35, 36, 100
Gap Filling193
Extinction Coefcient299
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Heavily Doped50
Helicon Wave Plasma, HWP
204
Helicon Waves215
Hetroepitaxy166
Gauge58, 164
Hexamethyldisilazane, HMDS
257
Hg Lamp265
General Exhaust22
High Aspect-Ratio230
Getter331, 332
Gettering331
75
Global Planalization284
Glow Discharge139
GND348, 359
Grain Boundary48, 50
Grain Growth47
98, 99
High Energy Ion Implant
Grain Size322
75
Graphite172, 174
High-k240
Ground Electrode79
Hillock191
Ground State139
Hi-Lo359
Grounding Bars97
Horizontal Furnace
Hard Bake264
318
Heat Exchanger20,
21, 130
Heat Tape51
388
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I
Immersion Lithography
274, 275
Impedance Matching Box
147, 195
Implanter74, 315
Impurity105, 106, 108, 109
In Situ Monitor177
Indexer14, 15, 365
Indium, In30, 68, 76
Inductive Couple Plasma, ICP
204, 206
Inelastic136
Inhibitors228
Injection68, 333
Insulator29, 218, 329
Integrated Circuit, IC29, 30
Inter Layer Dielectric, ILD
Ion Bombardment154,
202, 206, 225
Ion Gauge164
Ion Implant35,
68, 74, 75, 102, 333
Ion Implantation
102, 333
Ion Mass Analyzer75,
80
Ion Range70
Ion Source75, 76
Ion Transition Frequency
142
Ionization136, 138, 190
Ionization efciency164
IPA116, 125, 131, 132
Isotropic107, 223
Isotropic Etching223
53, 323,
332
Inter Metal Dielectric 1, IMD-1
325
Inter Metal Dielectric, IMD
Junction Depth45, 90
Junction Leakage Current
108
54
Interface Trapped ChargeQit
330
Interferometer219
Interlock2, 17, 59
Ion Accelerator75, 82
Ion Beam68, 75, 79, 82, 88
Ion Beam Current Control System
75, 88
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Main Etch233
Main Panel120
213
LEVEL355
Mainframe15, 16, 18
Manual Valve41
75
2, 381
Mapping16
Marangoni131, 132,
Linear Accelerator83
Liner Oxide313
Lithography, Litho107
133
Mask51, 52, 108, 117, 237, 274,
313
Load Cell342
Masking Layer51
Maskless Lithography274
Mass Flow Controller, MFC
190
Load/Unload Port Module
13, 14, 124
LOCal Oxidation of Silicon, LOCOS
45
Local Panel121
Local Scrubber22
Lorentz Force203
Low Pressure Chemical Vapor Deposition,
LPCVD37
Low-k Material240,
284
143
Mean Free Path, MFP137,
188
Mechanical Clamp218
Mechanical Pump
188
Mechanical Scanning84,
85
Medium Current Ion Implant
75
Metal Comtamination104,
105
Metal Gate285
Metal Impurity108
Metal-Ions106
390
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Nitride, Si3N451
Nitrogen, N2
284
Metallization182, 187, 312
Normal Close321
Normal Signal121
148, 167
Metalorganic Vapor Phase Epitaxy, MOVPE
Nucleate48
Numerical Aperture, NA267
167
Micro-Loading Effect229
Micro-Roughness106
Ohmic Heating209
Microtrench Etch
Migration235
Operator16, 33
Optical Encoder365
Optical Lithography265
329
Molecular Adhesion294
Molecular Beam Epitaxy
Optical Spectrometer
219, 221
Orbital Polisher288
148
Molybdenum, Mo183
Monolayer160
Moore's Law199, 312
Motion Control9
Multi-Beam Lithography
274, 279
Multiple Pattern274
N
Native Oxide
106, 109, 110, 112, 114, 115, 190,
233, 238
Neutralization75, 86, 331
Oscilloscope351
Over Etch227, 245
Oxalic Acid298
Oxidation36, 42, 44, 45, 55, 56,
117, 312, 314, 316, 339
Oxide Trapped ChargeQot
329
NH4Cl109
Oxygen30
Ozone Generator161
307, 332
Nitric Acid115, 116
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136, 182
Pick14, 15
Piezoelectric183
Paddle36, 59
Piping96
Place14, 15
Planck's Equation
178
Planetary Heating System
171
Plant365
Plasma51, 76, 117, 135, 136,
139, 140, 141, 148, 149, 161, 188,
190, 195, 196, 199, 201, 202, 204,
206, 207, 208, 214, 243, 249, 250,
333
Plasma Enhanced Chemical Vapor
Performance30
Permanent Magnet Type, PM
365
Permeability of Medium
208
Personal Protection Tool, PPT
2, 7
Deposition, PECVD
51
Plasma Etching333
Plasma Frequency208
Platen288
Platform16
P-N JunctionPN46
Phase Velocity217
Pneumatic Valve371
Phosphorous, P315
Phosphosilicate Glass, PSG
323
Poisson Model33
Polish Head286
Poly-Silicon Gate316,
Photo Switch342
Photolithography, Photo107,
253
Photoresist, PR256, 284
Photoresist Etchback284
317, 319
Polysilicon Gate Implant
75
Polysilicon, Poly-Si50
Polyurethane, PU288
392
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377
Projection Aligner 268,
269, 271
Projection Optics277
Post-Acceleration82
Projection Range70
Protonation295
Proximity Aligner268,
271
Pre-Acceleration82
Pseudomorphic166
Pre-Clean190
169
Predeposition46
370
Pumping Speed137
Punchthrough75, 91
Pressure Regulator41
Process2, 9, 13, 16, 18, 19, 31,
44, 45, 47, 49, 51, 53, 55, 85, 106,
Punchthrough Implant
75
PVDF Tank129
Process Module13,
18
Prole46, 72, 73, 200, 204, 231
Proling TC41
Programmable Automation Controller, PAC
377
Programmable Logic Controller, PLC
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332
RF Coil174
RF Generator
143, 146, 147, 148, 150, 195, 199,
200
Reactive Sputtering190
Recipe16, 55, 60, 123,
124, 125, 233
200
RF Linear Accelerator
83
Recovery47
Recrystallization47
Reectance179
RF Power Meter
147, 148
RHEED
RIE-Lag230, 231
164
Reow48
213
Refractive Index
179, 299
Regulator System8, 9
Rotation85
Round Beam273
Residuals245
302, 362
Resistance Coil40
Resistance Temperature Detector, RTD
362
Resistivity45, 302, 321
Schematic23
Resolution256, 266
SCR29, 342
Resolver365
Scratch305, 306
Resonators83
Retainer Ring286
Scrubber22, 40
Retrograde Well75, 91
Scrubbing296
394
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Secondary ions95
Single Crystal50
Seebeck362
Sintering36, 48
Seed Layer325
Skin Depth208
319
Self-Aligned244
Self-Bias145
Self-Limiting Growth155
Soft Bake261
Soft Etch190
338
Soft X-rayX277
Solenoid Valve370
Solid Content292
Source45, 75, 76, 78, 92, 176,
182, 202, 204, 206, 214, 250, 277,
319, 320
Source / Drain Implant
92
Shadow Effect73
Source Magnet78
284, 312
Sheath Layer202, 203, 205, 207,
208, 209
Spike TC41
Shutter163, 182
Spiking190, 192
SiH2Cl2, DCS51
Silane, SiH450
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Tetra-Ethyl-Ortho-Silicate, TEOS
53
Thermal Budget148
269
Thermal Diffusion68
Thermal Evaporation182
Thermal Expansion Coefcient
269
Step Coverage53, 153, 183,
193
181
Thermal Mismatch166, 167
Stigmator272
Stochastic Heating209
Thermocouple, TC40
Stopping Mechanisms71
Stress47, 312
225
Threshold Voltage, VT330
Suppression Electrode79
Surface Energy48
Surface Migration195
238
Surface Mobility154
Throughput107
Tilt85
Switch342
Torch45, 60
Track253, 255
Transducer147
Target188
Transfer Chamber
Technology Node31
Temperature Controller
342, 361, 362
396
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200, 370
Valve Mainfold Box, VMB
119
Van Der Waals Dispersion Force
294
Variable Reluctance Type, VR
365
Variable Shaped Beam
271, 273
Vent176, 177, 190
Vertical Flow Design
Turntable125, 288
U
Ultra-Thin Gate Oxide
106
169
Vertical Furnace36, 37
Via First244
Via-1
326, 327, 328
45, 316
Undoped Silicate Glass, USG
325
Uniformity84, 99, 127, 183,
185, 200, 285, 293, 302
Unsaturated Bonds48
Urethane294
V
Vacuum Chuck260, 261,
263, 264
Valve16, 17, 18, 41, 51, 53, 55,
97, 119, 160, 161, 175, 184, 186,
75, 85, 89
Wafer Start110
Water Mark112, 127
Well48, 75, 91, 314, 315, 320
Well Implant91
Wet Chemistry Process
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106
Wet Etching107
Wet Oxidation42, 44, 55,
56
Wet Scrubber22
Y
Yield30, 105
Z
Zeta Potential295
398
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.
., 2011.12
ISBN 978-957-11-6474-8 ()
1.
448.65
100020446
5DE0
/6
(04)2223-0891(04)2223-3549
/290
(07)2358-702 (07)2350-236
2 0 1 1 1 2
5 6 0
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