Guillem Aragón
Albert Fusté Practice 2 Electronic devices
Lab work
1. Implement a circuit to obtain the ID – VGS characteristic curve sweeping gate
voltage at given VDS. Find threshold voltage VT and compare it with the datasheet
value, and compute channel transconductance gm, indicating its maximum. Draw the
results qualitative.
ID-VGS
0,06
0,05
0,04
ID(A)
0,03
0,02
0,01
0
0 1 2 3 4 5
VGS(V)
Id-Vgs
dID-VGS
0,12
0,1
0,08
dID(A/V)
0,06
0,04
0,02
0
0 1 2 3 4 5
VGS(V)
dId-Vgs
Since we know that the derivative of Id is equal to gm, we get a maximum value of
gmmax=0,1044 A/V.
Then we use the following equation:
ID=Vgmax·gmmax+n → n=0,0388-0,1044·2,75=-0,2483A
Now we equal Id to 0 → Vg=Vt=0,2483/0,1044=2,378V
It’s not the exact value of the datasheet, but is we acknowledge all the possible mistakes
committed during the practice we can conclude it’s a good method to get Vt.
Guillem Aragón
Albert Fusté Practice 2 Electronic devices
2. Implement a circuit to obtain the ID – VDS characteristic curve sweeping drain
voltage at different gate voltages. Find the saturation point (IDS,SAT,VDS,SAT). Draw
the results qualitative.
ID-VDS (3,1V)
0,0004
0,00035
0,0003
0,00025
ID(A)
0,0002
0,00015
0,0001
0,00005
0
0 1 2 3 4 5 6
VDS(V)
Id-Vds (3.1V gate voltage)
ID-VDS(3,5V)
0,0025
0,002
0,0015
ID(A)
0,001
0,0005
0
0 1 2 3 4 5 6
VDS(V)
Id-Vds (3.5V gate voltage)
To get Idssat and Vdssat we need to look at the points where the graph flattens, which
means its saturated and won’t increase anymore.
In the first graph (3.1V) we get Vdssat=2V and Idssat=0,35mA
In the second graph (3.5V) we get Vdssat=2.75V and Idssat=2mA
