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MOSFET -Working, Types, Operation and Applications

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 MOSFET – Working, Types, Operation and Applications
MOSFET or Metal Oxide Semiconductor Field Effect Transistor is a type
of FET having four terminals namely Drain, Gate, Source and
Body/Substrate. The body terminal is shorted with the source terminal
leaving a total of three working terminals just like any other transistor.

The MOSFET conducts current

between its source and drain
through a path called a
channel. The width of this
channel is controlled by the
voltage at the gate terminal.

The metal oxide gate is

electrically isolated from the
channel using a thin layer of
silicon dioxide.

Symbol:

The D-MOSFET is also known as “normally ON” MOSFET because they

have a built-in channel is during manufacturing. Applying gate voltage
reduces the channel width, switching the MOSFET OFF. While the E-
MOSFET is also known as “Normally OFF” MOSFET because there is no
channel during fabrication but it is induced by applying voltage.

* The arrow pointing inward shows N-channel while the arrow pointing outward show P-
channel MOSFET.
MOSFET Regions of Operation:
Cutoff Region: In this region, the MOSFET remains turned off and there is no
drain current ID. When MOSFET is used as a switch, it utilizes this region
as OFF-state or opened-state of a switch.

Saturation Region: In the saturation region, the MOSFET allows a constant

current between source and drain. It acts as the ON-state or closed-state of
a switch. The MOSFET is fully on allowing maximum drain current ID -
through it.
Linear or Ohmic Region: In this region, the MOSFET offers constant resistance
that is controlled by the voltage level VGS. The drain current ID increases
with the level of the voltage VGS. Therefore, this region is used for
amplification.

Types of MOSFETs:
Depletion MOSFET

Therefore, it can conduct current between source and drain when the gate-
source voltage VGS = 0 volts. Due to this reason, it is also known as
“Normally ON” MOSFET.

Connecting the gate-source terminal in reverse bias will deplete the channel
of the charge carrier thus the name depletion MOSFET. It reduces the width
of the channel until it completely vanishes. At this point, the D-MOSFET
stops conduction and this VGS voltage is known as VTH threshold voltage.

* The D-MOSFET can be ‘N-channel D-MOSFET’ or ‘P-channel D-MOSFET’ depending

on the channel being used. The type of channel also affects its biasing as well as its
speed and current capacities.
N-Channel D-MOSFET:
The channel as it is made of N-type
material consists of electrons as charge
carriers. The voltage at the gate produces
an electric field that affects the flow of
these charge carriers.
 When the gate is connected in reverse
bias i.e. negative voltage VGS < 0 volt is
applied, the holes from the P-substrate
will attract towards the gate, depleting it
of the electrons and reduce the channel
size.
At certain negative VGS the MOSFET will
stop conduction as there will be no
channel. This VGS is threshold voltage
Vth. N-channel MOSFET has –Vth,

While increasing VGS will enhance (increase) its conductivity i.e. the drain
current ID will increase with the drain-source voltage VDS. However, this
works in the ohmic region.
When the VDS reaches the pinch-off voltage Vp, the IDS become saturated
IDSS and the current stops increasing. This mode is used for switching
applications.

Operating Regions of N-Channel D-MOSFET:

Cutoff Region: The gate-source voltage VGS ≤ -Vth. There is no drain current ID =
0 regardless of the value of VDS. The MOSFET is switched off.

Saturation Region: In this region, the VGS > -Vth and the VDS > Vp . The MOSFET
allows maximum drains current IDSS which depends on the VGS.

Linear or Ohmic Region: VGS > -Vth and the VDS < Vp. the MOSFET acts as an
amplifier. In this region, the current ID increases with the VDS while its
amplification depends on the VGS as shown in the VI characteristics.
P-Channel D-MOSFET:

The channel is made of P-layer over an

N-type substrate. The charge carriers
used are holes.

Under normal conditions, it can

conduct current between its source
and drain as long as there is a voltage
between them. The gate voltage can
affect the channel width to increase or
decrease it.

When a positive VGS is applied at its

gate, the electric field will cause to
attract the electrons from the N-type
substrate that combines with the holes
thus depleting the channel of charge
carriers.
It reduces the width of the channel and
the amount of current. at a certain
point, the VGS completely eliminates
the channel and stops the flow of
current.

Therefore, P-channel D-MOSFET has a positive threshold voltage i.e. it

switches off when positive VGS is applied and switches on when there is no
VGS. Applying negative voltage will induce more holes into the channel
causing it to increase or enhance its current conduction.

Operating Regions of P-Channel D-MOSFET:

Cutoff Region: The gate-source voltage VGS ≥ +Vth. There is no drain current
ID = 0 regardless of the value of VDS. The MOSFET is switched off.
Saturation Region: The VGS < +Vth and the VDS > Vp. The MOSFET allows
maximum drains current IDSS which depends on the level of VGS.

Linear or Ohmic Region: VGS < +Vth and the VDS < Vp. the MOSFET acts as an
amplifier. In this region, the current ID increases with the VDS while its
amplification depends on the VGS as shown in the VI characteristics.

Enhancement MOSFET

Enhancement MOSFET or E-MOSFET is a type of MOSFET that does not

have a channel during its fabrication. Instead, the channel is induced in the
substrate by applying the voltage through its gate electrode. The voltage
enhances its conduction ability hence the name.
The E-MOSFET does not conduct and remains switched OFF when there is
no voltage at its gate. It is why it is also known as “Normally OFF” MOSFET.

N-Channel E-MOSFET:
N-channel E-MOSFET will not conduct
current between its source and drain
terminal when the VGS = 0 volts.
Because there is no channel to allow
current flow. Applying a positive voltage
+VGS to the gate produces an electric
field beneath the gate layer. It results in
attracting the electrons from the P-
substrate and pushing back holes away
from the insulating layer. A channel in
induced which allows the current
between the source and drain.
The VGS at which the channel is induced is called Vth threshold voltage and
increasing the voltage above Vth causes to enhance the channel width.

Operating Regions of N-Channel E-MOSFET:

Cutoff Region: The gate-source voltage VGS ≤ Vthv. There is no drain current
ID = 0 regardless of the value of VDS. It operates as a switch.

Saturation Region: In this region, the VGS > Vthv and the VDS > VGS - Vth. The
MOSFET allows maximum drains current IDSS which depends on the level of
VGS.

Linear or Ohmic Region: VGS > Vth and the VDS < VGS - Vth. the MOSFET acts as
an amplifier. In this region, the current ID increases with the VDS while its
amplification depends on the VGS as shown in the VI characteristics.

P-Channel E-MOSFET:
When –VGS is applied to the gate, positive
charges (holes) gather beneath the
insulating layer and the electrons are
pushed back. The holes accumulate
together to form a channel between the
source and drain. Now, if the voltage
between source and drain is applied, it
will start to conduct current.

Same as N-channel, it does not conduct

when the VGS = 0 V. reducing the voltage
below Vth, the channel width increases,
allowing more current to flow through it.
Operating Regions of P-Channel E-MOSFET:
Cutoff Region: The gate-source voltage VGS ≥ -Vth. There is no drain current ID =
0 regardless of the value of VDS. It operates as a switch.

Saturation Region: In this region, the VGS < -Vth and the VDS ≥ VGS - Vth. The
MOSFET allows maximum drains current IDSS which depends on the level of
VGS.

Linear or Ohmic Region: VGS < -Vth and the VDS < VGS - Vth. the MOSFET acts as
an amplifier. In this region, the current ID increases with the VDS while its
amplification depends on the VGS as shown in the VI characteristics.

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