MOS Transistors

Yannis Tsividis

The Long-Channel MOS Transistor

Introduction
These slides are based on Y. Tsividis and C. McAndrew,
“Operation and Modeling of the MOS Transistor”, Copyright ©
Oxford University Press, 2011. They are meant to be part of a
lecture, and may be incomplete or may not even make sense
without the accompanying narration.
 Gate shown shallow
for economy of space

Assume, for now: 𝐿 and 𝑊 large

Substrate uniformly doped

𝑉𝑆𝐵 , 𝑉𝐷𝐵 ≥ 0

𝐼𝐺 = 0, 𝐼𝐵 = 0

Based on Tsividis/McAndrew; Copyright © Oxford University Press, 2011 2

Body reference:
𝐼𝐷 𝐼𝐷𝑆 𝑉𝐺𝐵 =𝑉𝐺𝐵4
𝑉𝐺𝐵
𝑉𝐺𝐵 =𝑉𝐺𝐵3
𝑉𝐷𝐵 𝑉𝐺𝐵 =𝑉𝐺𝐵2
𝑉𝑆𝐵 𝑝 𝑉𝐺𝐵 =𝑉𝐺𝐵1
𝑉𝐺𝐵 =𝑉𝐻𝐵
𝑉𝐷𝐵
𝑉𝑆𝐵
Source reference: 𝐼𝐷𝑆
𝑉𝐺𝑆 =𝑉𝐺𝑆4
𝑉𝐺𝑆 𝑉𝐷𝑆 𝐼𝐷
𝑉𝐺𝑆 =𝑉𝐺𝑆3
𝑉𝐺𝑆 =𝑉𝐺𝑆2
𝑉𝐺𝑆 =𝑉𝐺𝑆1
𝑉𝐺𝑆 =𝑉𝐻
𝑝 𝑉𝐷𝑆
𝑉𝑆𝐵

Based on Tsividis/McAndrew; Copyright © Oxford University Press, 2011 3

Based on Tsividis/McAndrew; Copyright ©
4
Oxford University Press, 2011
 Regions of inversion for the MOSFET

𝑉𝐺𝐵 𝐼𝐷

𝑉𝐷𝐵
𝑉𝑆𝐵 𝑝

If the most The MOSFET is

heavily inverted Then said to be
channel end is: operating in:
weakly inverted weak inversion
moderately inverted moderate inversion
strongly inverted strong inversion

Based on Tsividis/McAndrew; Copyright © Oxford University Press, 2011 5

𝑉𝐺𝐵 𝐼𝐷

𝑉𝐷𝐵

𝑉𝑆𝐵 𝑝
𝑥=0 𝑥=L

𝑎
q𝜙𝑏𝑖 𝑏
𝐸𝑐 (𝑥)
𝑐 q𝑉𝐷𝑆

𝜓𝑠 (𝑥)
𝑐′
𝑏′
𝑎′ 𝑥
0 0′ 𝐿′ 𝐿

Based on Tsividis/McAndrew; Copyright © Oxford University Press, 2011 6

A preview of what we will be doing

Based on Tsividis/McAndrew; Copyright © Oxford University Press, 2011 7