Helwan University - Faculty of Engineering
Electronics and Communications Engineering Department
Electronics
Field Effect Transistors
(MOSFETs)
Presented By:
Assistant Professor: Azza M. Anis
Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
In MOSFET, the gate is metal and
isolated by an oxide layer above a
semiconductor substrate. Source Drain
Source and drain regions are diffused Body (Semiconductor Substrate)
(created) into a semiconductor
substrate.
Because of metal-gate is isolated from the semiconductor substrate by
the oxide layer, the gate current is extremely small (𝑰𝑮 ≅ 𝟎).
Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
Depletion type Enhancement type
p-channel n-channel p-channel n-channel
There are two types of MOSFETs: depletion-type MOSFETs
(D-MOSFETs) and enhancement-type MOSFETs (E-MOSFETs).
For each type, there are two types of channel: n-channel and p-channel.
D-MOSFET is fabricated with a channel
between drain and source.
D-MOSFET uses the gate voltage (𝑉𝐺𝑆 )
D-MOSFET
to remove or increase the channel and
control the drain current.
E-MOSFET is fabricated with no channel
between drain and source.
E-MOSFET uses the gate voltage (𝑉𝐺𝑆 )
to create the channel and control the E-MOSFET
drain current.
Symbols of MOSFETs
Broken line in E-MOSFET E-MOSFET
means the absence of a channel.
The spacing between gate and
body of device represents the
D-MOSFET
fact that the gate is isolated from
the body.
Some manufacturers internally connect the body (substrate) to the source.
D-MOSFET E-MOSFET
N-Channel Enhancement MOSFET (E-MOSFET) Structure
For an n-channel E-MOSFET, source and drain are n-type regions, and
the substrate (body) is p-type semiconductor.
The metal gate is isolated from the semiconductor
substrate by an oxide layer (usually SiO2).
The E-MOSFET has no physical channel between
drain and source; hence it is a normally off device.
N-Channel Enhancement MOSFET (E-MOSFET) Operation
For an n-channel E-MOSFET, when a
positive voltage is applied on a gate, the
negative charges (electrons) in a substrate
are attracted between drain and source.
As a positive voltage on a gate increases,
more electrons are attracted between drain
and source.
The positive gate voltage at which sufficient number of electrons are
attracted to create a channel between drain and source; is called
threshold voltage and is specified as 𝑽𝑮𝑺(𝒕𝒉) .
Once a channel is created, if a positive
voltage is applied between drain and
Electrons
source (𝑽𝑫𝑺 ), a current 𝑰𝑫 flows
through the channel.
The magnitude of 𝑰𝑫 depends on a density
of electrons in the channel which in turn
depend on the magnitude of gate voltage
𝑰𝑫
𝑽𝑮𝑺 .
For 𝑽𝑮𝑺 = 𝑽𝑮𝑺(𝒕𝒉) , channel is just
Electrons
induced, and current 𝑰𝑫 is negligible
small.
As 𝑽𝑮𝑺 is increased above 𝑽𝑮𝑺(𝒕𝒉) , the number of electrons increases
and hence 𝑰𝑫 increases.
𝑰𝑫
𝑽𝑮𝑺 > 𝑽𝑮𝑺(𝒕𝒉)
𝑽𝑫𝑺
Drain current (𝑰𝑫 ) will increase linearly with increasing drain-to-source
voltage (𝑽𝑫𝑺 ). This region is called the ohmic region (linear region).
+ ++ +
As 𝑉𝐷𝑆 increases; the reverse voltage increases the depletion region
and reduces channel at drain end.
The value of 𝑽𝑫𝑺 at which
the channel is pinched-off
is called the overdrive
voltage (𝑽𝒐𝒗 ). 𝑰𝑫
𝑽𝑮𝑺 > 𝑽𝑮𝑺(𝒕𝒉)
𝑽𝒐𝒗 = 𝑽𝑮𝑺 − 𝑽𝑮𝑺(𝒕𝒉)
At which the drain current
(𝑰𝑫 ) reaches its maximum
value. 𝑽𝑫𝑺
𝑽𝒐𝒗
A continued increase in 𝑉𝐷𝑆 above the overdrive voltage (𝑽𝒐𝒗 ) produces
an almost constant drain current.
𝑰𝑫
𝑽𝑮𝑺 > 𝑽𝑮𝑺(𝒕𝒉)
The curve enters the
constant current region.
𝑽𝑫𝑺
𝑽𝒐𝒗
The parabolic relationship between 𝑰𝑫 and 𝑽𝑮𝑺 :
The drain current is zero for the values of the gate-to-source voltage less
than or equal the threshold voltage 𝑽𝑮𝑺(𝒕𝒉) .
For values of the gate-to-source
voltage greater than 𝑽𝑮𝑺(𝒕𝒉) , the
drain current is defined by:
𝟐
𝑰𝑫 = 𝑲 𝑽𝑮𝑺 − 𝑽𝑮𝑺(𝒕𝒉)
𝑲 is a device parameter and a function
of the geometry of the device.
𝑽𝑫𝑺 > 𝑽𝒐𝒗
𝑽𝑫𝑺 ≤ 𝑽𝒐𝒗
Constant-Current
region
𝑽𝑮𝑺 = 𝑽𝑮𝑺(𝒕𝒉) + 𝟒
The region of the 𝐼𝐷 − 𝑉𝐷𝑆 𝑽𝑫𝑺 = 𝑽𝒐𝒗
characteristics corresponding 𝑽𝑮𝑺 = 𝑽𝑮𝑺(𝒕𝒉) + 𝟑
to zero drain current is
referred to as cutoff region. 𝑽𝑮𝑺 = 𝑽𝑮𝑺(𝒕𝒉) + 𝟐
𝑽𝑮𝑺 = 𝑽𝑮𝑺(𝒕𝒉) + 𝟏
Cutoff region: 𝑽𝑮𝑺 ≤ 𝑽𝑮𝑺(𝒕𝒉)
𝑰𝑫 = 𝟎
In a constant current region, because the drain current (𝐼𝐷 ) is
independent of the voltage between the drain and source (𝑉𝐷𝑆 ), the
FET acts as a current source.
𝐷
+
𝐼𝐷 𝑉𝐷𝑆 Constant-Current Region
−
𝑆
It is possible to change the value of drain current (𝐼𝐷 ) by the voltage
between gate and source (𝑉𝐺𝑆 ).
𝐼𝐷
𝐷
+ 𝑉𝐺𝑆4
𝐼𝐷 (𝑉𝐺𝑆 )
𝑉𝐷𝑆 𝑉𝐺𝑆 𝑖𝑛𝑐𝑟𝑒𝑎𝑠𝑒𝑠
− 𝑉𝐺𝑆3
𝑆
𝑉𝐺𝑆2
Therefore, the FET acts as a voltage 𝑉𝐺𝑆1 𝑉𝐷𝑆
controlled current source at higher
drain-to-source voltages (constant
current region).
N-Channel Depletion MOSFET (D-MOSFET) Structure
In n channel D-MOSFET, an n-type drain and
source regions are connected by an n-type
channel region in a p-type substrate.
D-MOSFET is a normally on device.
N-Channel Depletion MOSFET (D-MOSFET) Operation
With a negative gate voltage, the negative charges on the gate repel
electrons from the channel.
The greater the negative voltage on the gate, the greater the depletion
of n-channel electrons.
At a sufficiently negative gate-to-source
voltage, 𝑽𝑮𝑺(𝒐𝒇𝒇) , the channel is totally
depleted, and the drain current is zero.
With a positive gate voltage, more electrons are attracted into a channel,
thus increasing the drain current.
The parabolic relationship between 𝑰𝑫 and 𝑽𝑮𝑺 :
𝟐
𝑽𝑮𝑺
𝑰𝑫 = 𝑰𝑫𝑺𝑺 𝟏 −
𝑽𝑮𝑺(𝒐𝒇𝒇)
Constant-Current
region
𝑽𝑮𝑺 = +𝟑 𝑽
The region of the 𝐼𝐷 − 𝑉𝐷𝑆
characteristics corresponding
𝑽𝑮𝑺 = 𝟎 𝑽
to zero drain current is
referred to as the cutoff
region at 𝑽𝑮𝑺(𝒐𝒇𝒇) . 𝑽𝑮𝑺 = −𝟐 𝑽
𝑽𝑮𝑺 = −𝟑 𝑽
Cutoff region: 𝑽𝑮𝑺 = 𝑽𝑮𝑺(𝒐𝒇𝒇)
𝑰𝑫 = 𝟎
Example 1:
If the E-MOSFET has values of 𝑉𝐺𝑆(𝑡ℎ) = 1 V and 𝐾 = 6 mA/V2.
Determine the drain current (𝐼𝐷 ) for 𝑉𝐺𝑆 = 0 V and 5 V.
Solution:
At 𝑉𝐺𝑆 = 0𝑉 < 𝑉𝐺𝑆(𝑡ℎ) → 𝐼𝐷 = 0
𝐴𝑡 𝑉𝐺𝑆 = 5𝑉, 𝐼𝐷 𝑖𝑠 𝑐𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒𝑑 𝑏𝑦:
2
𝐼𝐷 = 𝐾 𝑉𝐺𝑆 − 𝑉𝐺𝑆(𝑡ℎ)
2
𝐼𝐷 = 6𝑚𝐴 5 − 1 = 96𝑚𝐴
Example 2:
If the n-channel E-MOSFET has 𝑉𝐺𝑆(𝑡ℎ) = 1.5V. If 𝑉𝐺𝑆 = 2.5V, define
the region of operation for (a) 𝑉𝐷𝑆 = 0.5𝑉and (b) 𝑉𝐷𝑆 = 3𝑉.
Solution:
If 𝑉𝐺𝑆 ≤ 𝑉𝐺𝑆 𝑡ℎ , transistor is in cutoff.
∵ 𝑉𝐺𝑆 > 𝑉𝐺𝑆(𝑡ℎ) , transistor is either in
ohmic or constant-current region.
(a) 𝑉D𝑆 = 0.5𝑉 < 𝑉ov , the transistor is
in ohmic region.
(b) 𝑉D𝑆 =3𝑉 > 𝑉ov , the transistor is 𝑉𝑜𝑣 = 𝑉𝐺𝑆 − 𝑉𝐺𝑆(𝑡ℎ)
in constant-current region. 𝑉𝑜𝑣 = 2.5 − 1.5 = 1𝑉
Example 3:
If the E-MOSFET has values of 𝑉𝐺𝑆(𝑡ℎ) = 2V and 𝑉𝐷𝐷
𝐾 = 50mA/V2. Determine drain to source voltage (𝑉𝐷𝑆 ). 24V
Solution: 𝑰𝑫
𝑅𝐷
Apply KVL in the gate-to-source circuit: 𝑅𝐺
200Ω
10MΩ
𝑉𝐷𝐷 − 𝐼𝐷 𝑅𝐷 − 𝐼𝐺 𝑅𝐺 − 𝑉𝐺𝑆 = 0
∵ 𝐼𝐺 = 0 𝑰𝑮
𝑉𝐷𝐷 − 𝐼𝐷 𝑅𝐷 − 𝑉𝐺𝑆 = 0 𝑉𝐺𝑆
24 − 200 𝐼𝐷 − 𝑉𝐺𝑆 = 0
2
𝐼𝐷 = 𝐾 𝑉𝐺𝑆 − 𝑉𝐺𝑆(𝑡ℎ) = 50 ∗ 10−3 𝑉𝐺𝑆 − 2 2
𝑓𝑟𝑜𝑚 𝐼𝐷 = 50 ∗ 10−3 𝑉𝐺𝑆 − 2 2
and 24 − 200 𝐼𝐷 − 𝑉𝐺𝑆 = 0
24 − 200 ∗ 50 ∗ 10−3 𝑉𝐺𝑆 − 2 2
− 𝑉𝐺𝑆 = 0
−3 2
24 − 200 ∗ 50 ∗ 10 𝑉𝐺𝑆 −4𝑉𝐺𝑆 +4 − 𝑉𝐺𝑆 = 0
2
24 − 10𝑉𝐺𝑆 +40𝑉𝐺𝑆 −40 − 𝑉𝐺𝑆 = 0
2
10𝑉𝐺𝑆 −39𝑉𝐺𝑆 +16 = 0
2
−𝑏 ± 𝑏 2 − 4 ∗ 𝑎 ∗ 𝑐
10𝑉𝐺𝑆 −39𝑉𝐺𝑆 +16 = 0 𝑉𝐺𝑆𝟏,𝟐 =
2∗𝑎
39 ± (−39)2 −4 ∗ 10 ∗ 16
𝑉𝐺𝑆𝟏,𝟐 =
2 ∗ 10
𝑉𝐺𝑆𝟏 = 3.4342𝑉
𝑉𝐺𝑆2 = 0.5𝑉
𝑊ℎ𝑎𝑡 𝑖𝑠 𝑡ℎ𝑒 𝑣𝑎𝑙𝑢𝑒 𝑜𝑓 𝑉𝐺𝑆 𝑡ℎ𝑎𝑡 𝑤𝑒 𝑤𝑖𝑙𝑙 𝑢𝑠𝑒?
𝑉𝐺𝑆𝟏 = 3.4342𝑉𝑜𝑟 𝑉𝐺𝑆2 = 0.5𝑉
From the parabolic relationship between
𝑰𝑫 and 𝑽𝑮𝑺 :
𝑺𝒐 𝒘𝒆 𝒘𝒊𝒍𝒍 𝒖𝒔𝒆
𝑽𝑮𝑺𝟐 = 𝟎. 𝟓𝑽
𝑽𝑮𝑺𝟏 = 𝟑. 𝟒𝟑𝟒𝟐𝑽 > 𝑽𝑮𝑺(𝒕𝒉)
𝑽𝑮𝑺𝟏 = 𝟑. 𝟒𝟑𝟒𝟐𝑽
𝑽𝑮𝑺(𝒕𝒉) = 𝟐𝑽
𝑉𝐺𝑆 = 3.4342𝑉
𝐼𝐷 = 50 ∗ 10−3 𝑉𝐺𝑆 − 2 2 𝑉𝐷𝐷
24V
𝐼𝐷 = 50 ∗ 10−3 3.4342 − 2 2
= 102.84𝑚𝐴
𝑰𝑫
Apply KVL in the drain-to-source circuit: 𝑅𝐷
𝑅𝐺 200Ω
𝑉𝐷𝐷 − 𝐼𝐷 𝑅𝐷 − 𝑉𝐷𝑆 = 0 10MΩ
+
𝑉𝐷𝑆 = 𝑉𝐷𝐷 − 𝐼𝐷 𝑅𝐷
𝑉𝐷𝑆
𝑉𝐷𝑆 = 24 − 102.84 ∗ 10−3 ∗ (200) -
𝑉𝐷𝑆 = 3.432𝑉
Example 4:
𝑽𝑫𝑫
For an n-channel E-MOSFET 𝑉𝐺𝑆(𝑡ℎ) = 4𝑉 𝟐𝟐𝐕
and 𝐼𝐷 = 5𝑚𝐴 at 𝑉𝐺𝑆 = 7𝑉.
Determine 𝐼𝐷 , 𝑉𝐺𝑆 and 𝑉𝐷𝑆 . 𝑹𝑮
𝑹𝑫
𝟏. 𝟐𝐤𝛀
1𝐌𝛀
Solution:
𝑉𝐺𝑆 = 7.9 𝑉
𝐼𝐷 = 8.25 𝑚𝐴
𝑹𝑺
𝑉𝐷𝑆 = 7.9 𝑉 𝟎. 𝟓𝟏𝐤𝛀
Example 5:
If the D-MOSFET has values of 𝑉𝐺𝑆(𝑜𝑓𝑓) = – 8 V and 𝐼𝐷𝑆𝑆 = 10 mA.
Determine the drain current (𝐼𝐷 ) for 𝑉𝐺𝑆 = 0 V, – 3 V, and +3 V.
Solution:
At 𝑉𝐺𝑆 = 0𝑉 → 𝐼𝐷 = 𝐼𝐷𝑆𝑆 = 10𝑚𝐴
At 𝑉𝐺𝑆 = −3𝑉, 𝐼𝐷 𝑖𝑠 𝑐𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒𝑑 𝑏𝑦:
2
𝑉𝐺𝑆
𝐼𝐷 = 𝐼𝐷𝑆𝑆 1 −
𝑉𝐺𝑆(𝑜𝑓𝑓)
2
(−3)
𝐼𝐷 = 10𝑚𝐴 1 − = 3.91𝑚𝐴
(−8)
𝐴𝑡 𝑉𝐺𝑆 = +3𝑉, 𝐼𝐷 𝑖𝑠 𝑐𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒𝑑 𝑏𝑦:
2
𝑉𝐺𝑆
𝐼𝐷 = 𝐼𝐷𝑆𝑆 1 −
𝑉𝐺𝑆(𝑜𝑓𝑓)
2
(3)
𝐼𝐷 = 10𝑚𝐴 1 − = 18.91𝑚𝐴
(−8)
Example 6:
If the D-MOSFET has values of 𝑉𝐺𝑆(𝑜𝑓𝑓) = – 8 V and 𝐼𝐷𝑆𝑆 = 12 mA.
Determine the drain to source voltage (𝑉𝐷𝑆 ).
Solution:
𝑰𝑫
Apply KVL in the gate-to-source circuit:
− 𝐼𝐺 𝑅𝐺 − 𝑉𝐺𝑆 = 0 𝑰𝑮
∵ 𝐼𝐺 = 0
𝑉𝐺𝑆
𝑉𝐺𝑆 = 0
𝐴𝑡 𝑉𝐺𝑆 = 0 𝐼𝐷 = 𝐼𝐷𝑆𝑆 = 12 mA
Apply KVL in the drain-to-source circuit:
𝑉𝐷𝐷 − 𝐼𝐷 𝑅𝐷 − 𝑉𝐷𝑆 = 0 𝑰𝑫
+
𝑉𝐷𝑆 = 𝑉𝐷𝐷 − 𝐼𝐷 𝑅𝐷
𝑉𝐷𝑆
𝑉𝐷𝑆 = 18 − 12 ∗ 10−3 ∗ (620)
-
𝑉𝐷𝑆 = 10.56𝑉
Example 7:
For an n-channel D-MOSFET 𝑽𝑮𝑺(𝒐𝒇𝒇) = −𝟒𝑽 𝒂𝒏𝒅 𝑰𝑫𝑺𝑺 = 𝟔𝒎𝑨.
Determine 𝑽𝑮𝑺 and 𝑰𝑫 .
𝑽𝑫𝑫
Solution: 𝟏𝟒𝐕
𝑉𝐺𝑆 = −1.2 𝑉 𝑹𝑫
𝟏. 𝟐𝐤𝛀
𝐼𝐷 = 2.9 𝑚𝐴
𝑹𝑮
1𝐌𝛀 𝑹𝑺
𝟎. 𝟒𝟑𝐤𝛀
FET vs. BJT
❑ The major feature of FET is its very high input resistance.
𝑺𝒐𝒖𝒓𝒄𝒆
𝑰𝒇 𝑽𝒔 = 𝟏𝟎𝑽, 𝑹𝒔 =1kΩ, 𝑹𝒊𝒏 =100kΩ
𝑹𝒔 𝑽𝒊 𝑨𝒎𝒑𝒍𝒊𝒇𝒊𝒆𝒓 𝑽𝒐 10V x 100k
𝑽𝒊 = = 9.9V
1k + 100k
𝑽𝒔 𝑹𝒊𝒏
𝑰𝒇 𝑽𝒔 = 𝟏𝟎𝑽, 𝑹𝒔 =1kΩ, 𝑹𝒊𝒏 =0.5kΩ
10V x 0.5k
𝑽𝒊 = = 3.3V
1k + 0.5k
FET vs. BJT
❑ FET has a high thermal stability (because its operation depends on
flow of majority carriers only).
❑ FET is simpler to fabricate and occupies very small area.
❑ FETs consume low power than BJTs.
❑ FETs are less noisy than BJTs.
FET vs. BJT
❑ FETs are the preferred devices in the low-voltage switching applications
because FETs are generally faster than BJTs when turned on and off.
❑ FETs are not widely used in amplifiers as BJTs except where very high
input resistances are required.
The main disadvantage of FET is its relatively low gain-bandwidth
product in comparison with that which can be obtained with BJT.
FET Configurations
❑ FET can be connected in three different configurations.
❑ The three different configurations are common-source, common-
gate, and common-drain configurations.
❑ In each of these configurations, one lead is connected to the input, a
second lead is connected to the output, and a third lead is common
and connected to both input and output and is used as a reference
point.
𝑆
𝐷 𝑆 𝐷 𝐺
𝐺 𝑂𝑈𝑇 𝐼𝑁 𝑂𝑈𝑇 𝑂𝑈𝑇
𝐼𝑁 𝐼𝑁
𝐺 𝐷
𝑆
𝐶𝑜𝑚𝑚𝑜𝑛 𝑆𝑜𝑢𝑟𝑐𝑒 𝐶𝑜𝑚𝑚𝑜𝑛 𝐺𝑎𝑡𝑒 𝐶𝑜𝑚𝑚𝑜𝑛 𝐷𝑟𝑎𝑖𝑛
Characteristics of Common-Source Amplifiers
❑ Voltage gain 𝐴𝑉 is high.
❑ Input resistance 𝑅𝑖 is very high.
❑ Output resistance 𝑅𝑜 is high.
❑ Application: common-source amplifiers are
used as voltage amplifiers and impedance-
matching devices.
Characteristics of Common-Gate Amplifiers
❑ Voltage gain 𝐴𝑉 less than that of the
common-source amplifier.
❑ Input resistance 𝑅𝑖 is very low.
❑ Output resistance 𝑅𝑜 is medium.
❑ Application: common-gate amplifier has excellent
high-frequency response. Thus, it is used to amplify
high-frequency signals that come from sources with
relatively low resistances.
Characteristics of Common-Drain Amplifiers
❑ Voltage gain 𝐴𝑉 nearly equal to 1 (𝐴𝑉 ≈ 1).
❑ Input resistance 𝑅𝑖 is very high.
❑ Output resistance 𝑅𝑜 is low.
❑ Application: common-drain amplifiers
are used as voltage buffer or impedance-
matching device for connecting a high-
resistance source to a low-resistance load.
