MOSFET
Dr. E.Papanasam
papanasam.e@vit.ac.in
AP Senior
School of Electronics
VIT Chennai
Outline
• Device Structure
• Physical operation
• Modes of operation
• Characteristics
• Region of operation
• Configuration
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Device Structure
• The basic MOS capacitor structure
(a) A parallel-plate capacitor, showing the electric field and conductor charges
(b) a corresponding MOS capacitor with a negative gate bias, showing the electric
field and charge flow
Physical operation
Effect of positive gate bias, electric field and charge flow
MOS capacitor with an induced space charge MOS capacitor with an induced space-charge region and
region due to a moderate positive gate bias electron inversion layer due to a larger positive gate bias
Modes of operation
• Accumulation
• Depletion
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Modes of operation
• Inversion
• Threshold voltages depends on the thickness of the insulator,
doping concentration of substrate and non idealities
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Threshold Voltage (VT)
• Applied gate voltage needed to create an inversion charge
• Gate voltage required to “turn on” the transistor
• For the n-channel enhancement-mode MOSFET, the threshold voltage is
positive
• Positive gate voltage is required to create the inversion charge
• If the gate voltage is less than VT , the current in the device is essentially
zero
• If the gate voltage is greater than VT , a drain-to-source current is
generated as the drain-to-source voltage is applied
• The gate and drain voltages are measured with respect to the source
Types of MOSFET
• Based on the structure
– nMOS (n channel MOSFET) Current conduction is by
electron
– pMOS (p-channel MOSFET) Movement of holes
constitute current
• Based on the operation mode
– Enhancement mode MOSFET
– Depletion mode MOSFET
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Types of MOSFET
• Enhancement mode MOSFET
• Normally OFF devices
• Channel is not doped
• Application of gate voltages turn ON the devices
• Used in low power applications
• Depletion mode MOSFET
• Normally ON devices
• Channel is doped
• Application of gate voltages turn the devices OFF
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MOSFET Circuit Symbol and
Cross section
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Enhancement-mode MOSFET
Depletion-Mode MOSFET
Ideal MOSFET Current–Voltage
Characteristics—NMOS Device
• VGS < VTN
• No electron inversion layer, the drain-to-substrate pn junction
is reverse biased
• Drain current is zero (neglecting pn junction leakage currents)
Current–Voltage Characteristics
• VGS > VTN
• An electron inversion layer is created
• When a small drain voltage is applied, electrons in the inversion
layer flow from the source to the positive drain terminal
• The conventional current enters the drain terminal and leaves the
source terminal
Current–Voltage Characteristics
• Cross section and iD versus vDS curve for an n-channel
enhancement-mode MOSFET when vGS > VTN and for small VDS
value
Cross section and iD versus vDS curve for an n-channel
enhancement-mode MOSFET when and vGS > VTN and larger VDS
value but VDS < VDS(sat)
• As the drain voltage increases, the voltage
drop across the oxide near the drain
terminal decreases
• Induced inversion charge density near the
drain also decreases
• The incremental conductance of the
channel at the drain then decreases
• Slope of the iD versus vDS curve to decrease
Cross section and iD versus vDS curve for an n-channel
enhancement-mode MOSFET when vGS > VTN and larger VDS value
but VDS >= VDS(sat)
(c) vDS = vDS(sat) (d) vDS > vDS(sat)
Current–Voltage Characteristics when vGS >
VTN and larger VDS value but VDS >= VDS(sat)
• As vDS increases to the point where the potential difference,
vGS − vDS, across the oxide at the drain terminal is less than
VTN
• The induced inversion charge density at the drain terminal is
zero
• For this condition, the incremental channel conductance at
the drain is zero, => the slope of the iD versus vDS curve is zero
iD versus vDS curves for an n-channel
Enhancement-mode MOSFET
Current–Voltage Characteristics
• In the saturation region, since the ideal drain current is independent
of the drain-to source voltage, the incremental or small-signal
resistance is infinite
• Kn is sometimes called the trans conduction parameter for the n-
channel device
• Normally, kn is considered to be a constant for a given fabrication
technology
• Kn’ = μnCox and is called the process conduction parameter.
Three regions of operations of
MOSFET
• Cut off (Vgs < Vt and Vds ≤ Vgs-Vt)
– No channel is formed => Ids = 0
– Sub-threshold region
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Regions of operations Cont’d
• Linear Region (Vgs > Vt and 0 ≤ Vds ≤ Vgs-
Vt)
– Channel is formed and it is uniform
– Ids increases with Vds
– Non saturation region
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Regions of operations Contd…
• Saturation Region (Vgs > Vt and Vds >= Vgs – Vt)
– Vgd < Vt
– Channel is pinched off near the drain end
– Ids independent of Vds
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Current Voltage characteristics
nMOSFET Enhancement pMOSFET enhancement
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MOS Transistor Bias Modes
Current Equations
Where VGT = Vgs – Vt
Gain factor
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Example 2
• An NMOS transistor with VTN = 1 V has a drain current iD = 0.8
mA when vGS = 3V and vDS = 4.5V.
• Calculate the drain current when:
• (a) vGS = 2 V, vDS = 4.5 V; and
• (b) vGS = 3 V, vDS = 1 V.
Solution
References
• Donald A Neamen, Microelectronics: Circuit Analysis and
Design / Edition 4, 2010.
• Jan M. Rabaey, Anantha Chadrakasan, BorivojeNikolic, “Digital
Integrated Circuits: A Design Perspective”, 2014, Third Edition,
Prentice Hall India, New Jersey, US
