Department of Electrical and Electronic Engineering (EEE) COURSE OUTLINE

Bangladesh University of Engineering and Technology July 2021

EEE 313 – Solid State Devices

PART A: General Information
1. Course Number EEE 313
Course Title Solid State Devices
Credit (Contact) Hours 3.0
2. Level and Term (Section) Level-3, Term-II
Academic Term July 2021
3. Type of Course Core Course
Offered to EEE
4. Pre-requisite Course(s) None
5. Course Website Designated Microsoft Teams for each section
6. Lecture Schedule Section A: Sat 11 am, Mon 10 am, Tues 11 am
Section B: Sat 10 am, Sun 11 am, Tues 12 pm
Section C: Sat 11 am, Sun 11 am, Tues 11 am
7. Important Dates For important dates and examination schedules and latest updates,
please follow the course website
8. Course Teacher(s) Section A: Dr. Md. Kawsar Alam,
Professor
Dept. of EEE, BUET
Email: kawsaralam@eee.buet.ac.bd
Office: ECE Building
Website: http://kawsaralam.buet.ac.bd
Section B: Dr. Shaikh Asif Mahmood,
Associate Professor
Dept. of EEE, BUET
Email: asifmahmood@eee.buet.ac.bd
Office: ECE Building
Website: http://asifmahmood.buet.ac.bd
Section C: Dr. Md Zunaid Baten
Associate Professor
Dept. of EEE, BUET
Email: mdzunaid@eee.buet.ac.bd
Office: ECE124, ECE Building
Phone: +8801715062288
Website: https://sites.google.com/site/mdzunaid

PART B: Course Details

9. Course Content (As approved by the Academic Council)
 Semiconductors in equilibrium: Energy bands, intrinsic and extrinsic semiconductors, Fermi levels,
electron and hole concentrations, temperature dependence of carrier concentrations and invariance of
Fermi level.
 Carrier transport processes and excess carriers: Drift and diffusion, generation and recombination of
excess carriers, built-in-field, recombination-generation SRH formula, surface recombination, Einstein
relations, continuity and diffusion equations for holes and electrons and quasi-Fermi level.
 PN junction: Basic structure, equilibrium conditions, contact potential, equilibrium Fermi level, space
charge, non-equilibrium condition, forward and reverse bias, carrier injection, minority and majority
 carrier currents, transient and AC conditions, time variation of stored charge, reverse recovery transient
and capacitance.
 Bipolar Junction Transistor: Basic principle of pnp and npn transistors, emitter efficiency, base
transport factor and current gain, diffusion equation in the base, terminal currents, coupled-diode model
and charge control analysis, Ebers-Moll model and circuit synthesis. BJT non-ideal effects; Hetero-
junction transistors.
 Metal-semiconductor junction: Energy band diagram of metal semiconductor junctions, rectifying and
ohmic contacts.
 MOS structure: MOS capacitor, energy band diagrams and flat band voltage, threshold voltage and
control of threshold voltage, static CV characteristics, qualitative theory of MOSFET operation, body
effect and current-voltage relationship of a MOSFET. Non-ideal characteristics of MOSFET: channel-
length modulation and shortchannel effects in MOSFETs. MOS scaling
 Introduction to Multigate FET architecture: Double gate MOSFET, FinFET, Surrounding gate FET,
high-K dielectric FETs.

10. Course Objectives

 To provide a physics-based understanding of the operation principle of some of the most commonly
used solid-state electronic devices, such as p-n junction diodes, metal-semiconductor devices, bipolar-
junction transistors (BJTs), metal oxide semiconductor field effect transistors (MOSFETs) and
capacitors.
 To establish the theoretical foundation required for designing solid-state devices so that those can be
applied for practical electronic applications

11. Background Knowledge required

Fundamental understanding of concepts of Electronic Circuits I course and Electrical Properties of
Materials courses

12. Course Outcomes

CO CO Statement Corresponding Domains and Delivery Method(s) Assessment
No. PO(s)* Taxonomy and Activity(-ies) Tool(s)
level(s)**
1 apply the physics-based PO1 C3 Lectures, Discussions Assignment,
knowledge to solve problems Class test,
relevant the operation of Final exam
solid-state devices

2 analyse the operation of PO2 C4 Lectures, Discussions Assignment,

solid-state devices based on Class test,
the underlying physics Final exam
3 design solid-state electronic PO3 C5 Lectures, Discussions Assignment,
devices such that specified Final exam
performance characteristics
are attained

*Program Outcomes (PO): PO1 Engineering Knowledge, PO2 Problem Analysis, PO3 Design/development Solution, PO4 Investigation,
PO5 Modern tool usage, PO6 The Engineer and Society, PO7 Environment and sustainability, PO8 Ethics, PO9 Individual work and team work,
PO10. Communication, PO11 Project management and finance, PO12 Life-long Learning
**Cognitive Domain Taxonomy Levels: C1 – Remember, C2 – Explain, C3 – Apply, C4 – Analysis, C5 – Evaluation, C6 – Synthesis/Design

13. Assessment Strategy

 Class participation will be judged by in-class evaluation; attendance will be recorded in every class.
 Continuous assessment will be done in the form of quizzes, assignments, in-class evaluations.
 Final Examination: A comprehensive term final examination will be held at the end of the Term
following the guideline of academic Council.
14. Distribution of Marks
Class Participation 10%
Homework, Assignment and Quizes 20%
Final Examination 70%
Total 100%

15. Main Textbook

 Semiconductor Physics and Devices: Basic Principles by Donald A. Neaman (4th edition)

16. Reference Textbooks and relevant resources

 Solid State Electronic Devices by Ben G. Streetman and Sanjay Kumar Banerjee
 Semiconductor Device Fundamentals by Rober F. Pierret
 Online resources or supplementary materials will be shared with the class on a need basis

N.B. Besides going through relevant topics of the textbook, it is strongly advised that the students follow the
class lectures and discussions regularly for a thorough understanding of the topics.

17. Lecture Plan

Week Lectures Topic
Semiconductors in equilibrium: Energy bands, intrinsic and extrinsic
1 1-3
semiconductors, Fermi levels
Semiconductors in equilibrium: Electron and hole concentrations,
2 4-6 temperature dependence of carrier concentrations and invariance of
Fermi level.
Carrier transport processes and excess carriers: Drift and diffusion,
3 7-9 generation and recombination of excess carriers, built-in-field,
recombination-generation SRH formula
Carrier transport processes and excess carriers: Surface
4 10-12 recombination, Einstein relations, continuity and diffusion equations
for holes and electrons and quasi-Fermi level.
p-n junction: Basic structure, equilibrium conditions, contact potential,
5 13-15 equilibrium Fermi level, space charge, non-equilibrium condition,
forward and reverse bias
p-n junction: Carrier injection, minority and majority carrier currents,
6 16-18 transient and AC conditions, time variation of stored charge, reverse
recovery transient and capacitance.
Bipolar Junction Transistor: Basic principle of pnp and npn transistors,
7 19-21 emitter efficiency, base transport factor and current gain, diffusion
equation in the base, terminal currents,
Bipolar Junction Transistor: Coupled-diode model and charge control
8 20-24 analysis, Ebers-Moll model and circuit synthesis. BJT non-ideal
effects; Hetero-junction transistors.
Metal-semiconductor junction: Energy band diagram of metal
9 25-27
semiconductor junctions, rectifying and ohmic contacts.
MOS structure: MOS capacitor, energy band diagrams and flat band
10 28-30
voltage, threshold voltage and control of threshold voltage
MOS structure: Static CV characteristics, qualitative theory of
11 31-33 MOSFET operation, body effect and current-voltage relationship of a
MOSFET.
12 34-36 MOS structure: Non-ideal characteristics of MOSFET: channel-length
 Week Lectures Topic
modulation and shortchannel effects in MOSFETs. MOS scaling
Introduction to Multigate FET architecture: Double gate MOSFET,
13 37-39
FinFET, Surrounding gate FET, high-K dielectric FETs.

18. Important University Policies

 Please check the following link for Rules and regulations for the undergraduate programmes:
https://www.buet.ac.bd/info/Academicinformation/RulesUndergradprogram

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Course Outline Prepared by Dr. Md Zunaid Baten 12/11/2021

Course Outline Reviewed by Dr. Md. Kawsar Alam 12/11/2021

Dr. Shaikh Asif Mahmood