Surface Micromachining

Chang Liu Micro Actuators, Sensors, Systems Group University of Illinois at Urbana-Champaign

Chang Liu

MASS

UIUC

Outline
Basic surface micromachining process Most common surface micromachining materials - polysilicon and silicon oxide
LPCVD deposition of polysilicon, silicon nitride, and oxide plasma etching for patterning structural layer micromachined hinges - fabrication process and assembly technique micromachined dimples and scratch drive actuators

Other sacrificial processing systems

metal sacrificial layer, plastics materials, etc.

Stiction and anti-stiction solutions Multi User MEMS Process (MUMPS)

process definition and layer naming conventions

Chang Liu

MASS

UIUC

Basic Sacrificial Layer Processing

Step 1: Deposition of sacrificial layer Step 2: patterning of the sacrificial layer Step 3: deposit structural layer (conformal deposition) Step 4: liquid phase removal of sacrificial layer Step 5: removal of liquid - drying.

Sacrificial wet etching

drying

Chang Liu

MASS

UIUC

Process and Chemical Compatibility

For a two layer process

The deposition of the structural layer must not damage the sacrificial layer
Thermal stability

The pattering of the structural layer must not damage the sacrificial layer
Chemical and thermal stability

The removal of the sacrificial layer must not damage the structural layer
Chemical and thermal stability

Chang Liu

MASS

UIUC

Surface Micromachined Inductor

Air bridge can be formed using sacrificial etching.

Chang Liu

MASS

UIUC

Micro Gears with Free-standing Chains

Chang Liu

MASS

UIUC

Inductor - By Lucent Technologies

Chang Liu

MASS

UIUC

Surface Micromachined, Out of Plane Structures

Chang Liu

MASS

UIUC

Hinges
Used in micro optics component assembly.

Chang Liu

MASS

UIUC

Hinge Fabrication
Step 1: deposition of sacrificial layer. Step 2: deposition of structural layer. Step 3: deposition of second sacrificial layer. Step 4: etching anchor to the substrate. Step 5: deposition of second structural layer. Step 6: patterning of second structural layer Step 7: Etch away all sacrificial layer to release the first structural layer.
MASS

Chang Liu

UIUC

For a four layer process

Sacrificial layers (Sac1, sac2) Structural layers (str 1, str 2)
Chang Liu

Str1 deposition must not affect sac1 Str1 patterning must not affect sac1 Sac2 deposition must not affect sac1 Sac2 deposition must not affect str1 Sac2 patterning must not affect str1 Sac2 patterning must not affect sac1 (if sac 1 is exposed) Str 2 deposition must not affect sac2 Str 2 deposition must no affect str1 Str 2 deposition must not affect sac1 Str 2 patterning must not affect sac2, str1, sac1 Sac 1 removal must not affect str 2, str1 Sac 2 removal must not affect str 2, str1
MASS

UIUC

To make things more complex and challenging

Certain layers need to be made of a certain material;

Stress control issues may dictate certain layer materials;

Electrical performances may dictate certain layer materials;

Economic issues may dictate certain layer materials;

Chang Liu

MASS

UIUC

Chang Liu

MASS

UIUC

This is helpful but

Every lab is different.

Every machine is different.

Every run may be different.

Chang Liu

MASS

UIUC

Metal Sacrificial Layers

Permalloy (>20m) PR 4620 (10m each) copper (9m each)

Aluminum (0.3m)

Chang Liu

MASS

UIUC

Out Of Plane Devices

Chang Liu

MASS

UIUC

Three Pillars of MEMS

Goals: Better performance Better yield Unique advantages Lower cost Higher yield

Design (physics, Principle)

Materials

Fabrication

Chang Liu

MASS

UIUC

Hybrid Fabrication Process

Combine the following processing styles into a single fabrication sequence
Bulk machining Surface machining Three dimensional assembly Wafer bonding (low temperature or high temperature)

Chang Liu

MASS

UIUC

Example: Scanning Probe Microscopy

Problems with existing processes
Etching of positive pyramids
Difficult tot control etch stop point; uniformity difficult to obtain

Utilizes silicon substrate

Can be replaced by lower costs substrates

Bulk etching
Long etching time involved to etch through the wafer Anisotropic etching: 1-2 micrometere/min DRIE: 1 micrometere/min, high costs of equipment and consumables

Chang Liu

MASS

UIUC

A hybrid method to fabricate SPM probes

Chang Liu

MASS

UIUC

Chang Liu

MASS

UIUC

Chang Liu

MASS

UIUC

Chang Liu

MASS

UIUC

Chang Liu

MASS

UIUC

Chang Liu

MASS

UIUC

Example: Solenoid
One way of realizing surface micromachined solenoid

Chang Liu

MASS

UIUC

A New Method

Chang Liu

MASS

UIUC

Chang Liu

MASS

UIUC

Chang Liu

MASS

UIUC

LPCVD Process
Temperature range 500-800 degrees Pressure range 200 - 400 mtorr (1 torr = 1/760 ATM) Gas mixture: typically 2-3 gas mixture Particle free environment to prevent defects on surface (pin holes)

Chang Liu

MASS

UIUC

A Laboratory LPCVD Machine

Chang Liu

MASS

UIUC

LPCVD Recipes for Silicon Nitride, Polysilicon, and Oxide

Polycrystalline silicon
Polysilicon is deposited at around 580-620 oC and can withstand more than 1000 oC temperature. The deposition is conducted by decomposing silane (SiH4) under high temperature and vacuum (SiH4> Si+2H2). Polysilicon is used extensively in IC - transistor gate

Silicon nitride
Silicon nitride is nonconducting and has tensile intrinsic stress on top of silicon substrates. It is deposited at around 800 oC by reacting silane (SiH4) or dichlorosilane (SiCl2H2) with ammonia (NH3) - SiH4+NH3 -> SixNy+ H. The PSG is knows to reflow under high temperature (e.g. above 900 oC); it is deposited under relatively low temperature, e.g. 500 oC by reacting silane with oxygen (SiH4+O2-> SiO2+2H2). PSG can be deposited on top of Al metallization. Silicon oxide is used for sealing IC circuits after processing. The etch rate of HF on oxide is a function of doping concentration.
Chang Liu MASS

Silicon oxide

UIUC

Other Structural or Sacrificial Materials

Structural layers
evaporated and sputtered metals such as Gold, Copper electroplated metal (such as NiFe) plastic material (CVD plastic) silicon (such as epitaxy silicon or top silicon in SOI wafer)

Sacrificial layers
photoresist, polyimide, and other organic materials copper
copper can be electroplated or evaporated, and is relatively inexpensive.

Oxide by plasma enhanced chemical vapor deposition (PECVD)

PECVD is done at lower temperature, with lower quality. It is generally undoped.

Thermally grown oxide

relatively low etch rate in HF.

Silicon or polysilicon
removed by gas phase silicon etching
Chang Liu MASS

UIUC

A PECVD Machine

Processing gases

Reaction chamber

RF plasma generator

Chang Liu

MASS

UIUC

Electroplating
Electroplating process description

Chang Liu

MASS

UIUC

Gas Phase Silicon Etching

XeF2
liquid phase under room temperature 2XeF2+Si => 2 Xe + SiF4

vapor phase under low pressure etches silicon with high speed http://www.xactix.com/

BrF3

Both are isotropic etchants

solid phase under regular pressure and room temperature vapor phase (sublimation) under low pressure BrF3 when reacted with water turns into HF at room temperature.

Chang Liu

MASS

UIUC

Organic Sacrificial Layer

Photoresist
etching by plasma etching (limited lateral etch extent) or by organic solvents (acetone or alcohol)

Polyimide
etching by organic solvents

Advantage
extremely low temperature process easy to find structural solutions with good selectivity

Disadvantage
many structural layers such as LPCVD are not compatible. Structure material must be deposited under low temperatures. Metal evaporation is also associated with high temperature metal particles, so it is not completely compatible and caution must be used.
Chang Liu MASS

UIUC

Criteria for Selecting Materials and Etching Solutions

Selectivity
etch rate on structural layer/etch rate on sacrificial layer must be high.

Etch rate
rapid etching rate on sacrificial layer to reduce etching time

Deposition temperature
in certain applications, it is required that the overall processing temperature be low (e.g. integration with CMOS, integration with biological materials)

Intrinsic stress of structural layer

to remain flat after release, the structural layer must have low stress

Surface smoothness
important for optical applications

Long term stability

Chang Liu

MASS

UIUC

Stiction = Sticking and Friction

Chang Liu

MASS

UIUC

Origin of Stiction

As the liquid solution gradually vaporizes, the trapped liquid exert surface tension force on the microstructure, pulling the device down. Surfaces can form permanent bond by molecule forces when they are close.
Chang Liu MASS

UIUC

Antistiction Method I - Active Actuation Method

Use magnetic actuation to pull structures away form the surface
reduced surface tension length of arm

Limitations
only works for structures with magnetic material.

Chang Liu

MASS

UIUC

Antistiction Method II Organic Pillar

Use organic pillar to support the structure during the liquid removal. The organic pillar is removed by oxygen plasma etching.

Chang Liu

MASS

UIUC

Antistiction Drying Method III - Phase Change Release Method

Supercritical CO2 Drying

Avoid surface tension by relaying on phase change with less surface tension than watervapor. * p. 128-129 Supercritical state: temp > 31.1 oC and pressure > 72.8 atm. Step 1: change water with methanol Step 2: change methanol with liquid carbon dioxide (room temperature and 1200 psi) Step 3: content heated to 35 oC and the carbon dioxide is vented. Free-standing cantilever beams upto 850 m can stay released.

Chang Liu

MASS

UIUC

Super Critical Drying

When a substance in the liquid phase at a pressure greater than the critical pressure is heated, it undergoes a transition from a liquid to a supercritical fluid at the critical temperature. This transition does not involve interfaces. Criteria
chemically inert, non-toxic low critical temperature

CO2

critical temperature 31.1 oC critical pressure 72.8 atm.(or 1073 psi)

Exchange methanol with liquid CO2 at 25oC and 1200 psi closeoff vessel and heated to 35 oC, no interface is formed. Vent vessel at a constant temperature above critical temperature.

Chang Liu

MASS

UIUC

Antistiction Method III - Self-assembled Monolayer

Forming low stiction, chemically stable surface coating using self-assembly monolayer (SAM) SAM file is comprised of close packed array of alkyl chains which spontaneously form on oxidized silicon surface, and can remain stable after 18 months in air. OTS: octadecyltrichlorosilane (forming C18H37SiCl3)

Chang Liu

MASS

UIUC

Result of SAM Assembly

Surface oxidation: H2O2 soak SAM formation
isopropanol alcohol rinse CCl4 rinse OTS solution CCl4 rinse

Chang Liu

MASS

UIUC

Structural-Sacrificial Compatibility

Chang Liu

MASS

UIUC

Chang Liu

MASS

UIUC

Chang Liu

MASS

UIUC

Chang Liu

MASS

UIUC

Foundry Process
Why:
Reduce the cost of development by providing standard and unusual processes at reasonable cost.

How:
Wafer sharing: many processes are performed on one wafer with many users sharing the mask.
Drawback: limited process materials and steps

Machine sharing: a users wafer is dedicated and ships back-andforth among several vendors.
Drawback: long development and transport time

Dedicated foundry: a users wafer is handled at one site by dedicated personnel.

Drawback: highest cost among all forms of foundry process.

Chang Liu

MASS

UIUC

The Importance of Design Rules

Chang Liu

MASS

UIUC

Example: MUMPS Process Multi User MEMS Process

Chang Liu

MASS

UIUC

The Versatility of MUMPS

Chang Liu

MASS

UIUC

Compatibility Table
Polysilicon Dry plasma etching HF wet etching Uncured photoresist Photoresist developer Organic rinse Baking Metal etchant
Chang Liu

Yes No

No
No No No No

Silicon oxide Photoresist (cured) Yes, slower Yes, slow speed Yes No, avoid long soak No Yes No No No No Yes Yes No No

Metal No. Sputtering is possible No, avoid long contact No No No No Yes

MASS

UIUC

Case 4.1, Electrostatic Actuators

Curved beam due to intrinsic stress in the cantilever. Helps:
Release

Hinders:
Capacitance calculation

Chang Liu

MASS

UIUC

How good is the design and process?

Design:
Advantage:
Direct integration of mechanical cantilever with FET transistors

Low noise sensor

Materials
Relatively difficult material Exotic wafer

Processes
Difficulties:
Cantilever release using web silicon etchant may be a problem

Requires foundry process and new process development if industrialized

Chang Liu

MASS

UIUC

Case 4.2: Torsional Capacitive Accelerometer

Chang Liu

MASS

UIUC

How good is this design?

Design:
Simple No electronics integration
Greater noise

Material:
Simple Readily available

Fabrication process
Does not require exotic materials or processes Sacrificial release may be a problem, like the previous case

Chang Liu

MASS

UIUC

Case 4.3: Membrane Parallel Plate Pressure Sensor

Chang Liu

MASS

UIUC

Evaluation
Design:
Results in hermetically sealed structures Result in large gap distance to reduce damping

Materials:
Silicon materials Doped silicon

Fabrication:
Length steps Delicate bonding and handling Process development is lengthy

Chang Liu

MASS

UIUC