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Lecture 7
p-n Junction
A p-n junction plays a major role in electronic
devices.
It is used in rectification, switching, and etc.
It is the simplest semiconductor devices.
Also, it is a key building block for other
electronic, microwave, or photonic devices.
d 2
dE
ND N A p n
2
dx
dx
(1)
as
kT N D
n EF Ei ln
e ni
p Ei EF
kT N A
ln
e ni
(2)
(3)
kT N A N D
Vbi n p
ln
e ni2
(5)
(d) Rectangular
approximation of the
space charge distribution.
N A N D
Vbi kT ln
2
ni
18
15
10
10
2
0.0259ln
9.65 109
Vbi 0.774 eV
Depletion Region
The p-n junction may
be classified into two
classes depending on it
s impurity distribution:
the abrupt junction
and
the linearly graded
junction.
Depletion Region
An abrupt junction can be
seen in a p-n junction that
is formed by shallow diffus
ion or low-energy ion impl
antation.
The impurity distribution
in this case can be
approximated by an abrupt
transition of doping concen
tration between the n- and
the p-type regions.
Depletion Region
In the linearly graded
junction, the p-n junctio
n may be formed by deep
diffusions or high-energy
ion implantations.
The impurity distribution
varies linearly across the
junction.
Abrupt junction
Consider an abrupt junction
as in the figure above, equat
ion (1) can be written as
d 2 eN A
2
dx
d 2
eN D
dx 2
for -x p x 0
for 0 x xn
N A x p N D xn
Abrupt junction
To solve equation (5), we need to solve it separately for
p- and n-type cases.
p-side:
eN A x
We know that E
eN A x
E p ( x)
c
d
dx
Abrupt junction
Apply boundary condition: E p ( x x p ) 0
eN A ( x p )
Ep (xp )
c 0
eN A x p
E p ( x)
eN A ( x x p )
(7)
Abrupt junction
n-side:
Similarly, we can have
eN D ( x xn )
eN D x
En ( x)
Em
(8)
Abrupt junction
Let consider at x = 0
E p (0) En (0)
eN A x p
eN D ( xn )
Em
(9)
xn
xp
xn
E ( x)dx
xp
E ( x)dx
E ( x)dx
p side
n side
Abrupt junction
2
A p
eN x
2
D n
eN x
Vbi
2
2
(10)
xn
N Axp
ND
N D xn
xp
NA
(11)
Abrupt junction
Substitute (11) into (10), this yields
2Vbi
ND
xp
e N A ND N A
2Vbi
NA
xn
e N A ND ND
(12)
Abrupt junction
Hence, the space-charge layer width or
depletion layer width can be written as
2Vbi
W x p xn
e
N A N D
N
N
A D
(13)
Abrupt junction
Ex. Si p-n diode of NA = 5 x 1016 cm-3 and ND = 1015
cm-3. Calculate
(a) built-in voltage
(b) depletion layer width
(c) Em
Abrupt junction
Soln (a)
kT N A N D
Vbi
ln
2
e ni
5 10 10
0.0259ln
1.45 1010 2
Vbi 0.679 eV
16
15
Abrupt junction
Soln (b)
From (13)
2 Vbi
W
e
N A N D
N
N
A D
19
16
15
1.6 10
5
10
10
W 0.95 m
Abrupt junction
Soln (c)
Emax E ( x 0)
xn
eN A x p
eN D ( xn )
2Vbi
N
A
e N A ND ND
19
16
15
1015
1.6 10 5 10 10
xn 9.299 105 cm.
Emax
Emax
eN D ( xn )
Abrupt junction
If one side has much
higher impurity doping
concentration than
another, i.e. NA >> ND or
ND >> NA, then this is
called one-sided
junction.
Consider case of p+-n
junction as in the figure
(NA >> ND),
2Vbi
W xn
eN D
Abrupt junction
Similarly, for n+-p junction of ND >> NA
W xp
2Vbi
eN A
eN B x
E ( x ) Em
Abrupt junction
The maximum electric field Em at x = 0 can be
found as
eN BW
Em
E ( x)
W x Em 1
(16)
Abrupt junction
The potential distribution can be found from
integrating (16) as
Vbi x
x
( x)
2
W
W
(17)
Abrupt junction
Ex. For a silicon one-sided abrupt junction with NA
= 1019 cm-3 and ND = 1016 cm-3, calculate the
depletion layer width and the maximum field at
zero bias.
Abrupt junction
Soln
19
16
10
10
0.895 V
Vbi 0.0259ln
2
9.65 109
2Vbi
W
3.41 105 0.343 m
eN D
Em
qN BW
0.52 104 V/cm
d 2
dE
e
W
W
ax for - x
2
dx
dx
2
2
(18)
ea W / 2 x
E ( x)
(19)
eaW 2
Em
8
(20)
eaW 3
Vbi
12
(21)
and
kT aW / 2 aW / 2
2kT aW
Vbi
ln
ln
2
e
ni
e
2
n
(22)
4.75
10
V/cm
14
8
8 11.9 8.85 10
1020 0.5 104
2kT aW
Vbi
0.645 V
2 0.0259
9
e 2ni
2 9.65 10
2
19
20
4 2