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  • Pattern Generation and Transfer: Circuit Design Pattern Data Master Mask Set Working Mask Set Pattern On Wafers

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    Jahid Hasan
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    The document discusses lithographic processes used in integrated circuit fabrication. Key aspects covered include: - Circuit design data is used to generate master and working mask sets which are then used to pattern wafers through lithography and etching. Feature sizes are constantly decreasing. - Photoresists are applied to wafers and undergo chemical changes when exposed to light or other radiation, allowing for selective etching. Negative resists cross-link while positive resists dissolve. - Common lithography techniques include contact printing at high resolution but lower throughput, proximity printing at lower resolution but no damage, and projection printing with flexibility but limited resolution. - A complete lithographic process involves photoresist coating, prebaking

    Original Description:

    Lithography

    Original Title

    Lect Lithography

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    The document discusses lithographic processes used in integrated circuit fabrication. Key aspects covered include: - Circuit design data is used to generate master and working mask sets which are then used to pattern wafers through lithography and etching. Feature sizes are constantly decreasing. - Photoresists are applied to wafers and undergo chemical changes when exposed to light or other radiation, allowing for selective etching. Negative resists cross-link while positive resists dissolve. - Common lithography techniques include contact printing at high resolution but lower throughput, proximity printing at lower resolution but no damage, and projection printing with flexibility but limited resolution. - A complete lithographic process involves photoresist coating, prebaking

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
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    4 views16 pages

    Pattern Generation and Transfer: Circuit Design Pattern Data Master Mask Set Working Mask Set Pattern On Wafers

    Uploaded by

    Jahid Hasan
    The document discusses lithographic processes used in integrated circuit fabrication. Key aspects covered include: - Circuit design data is used to generate master and working mask sets which are then used to pattern wafers through lithography and etching. Feature sizes are constantly decreasing. - Photoresists are applied to wafers and undergo chemical changes when exposed to light or other radiation, allowing for selective etching. Negative resists cross-link while positive resists dissolve. - Common lithography techniques include contact printing at high resolution but lower throughput, proximity printing at lower resolution but no damage, and projection printing with flexibility but limited resolution. - A complete lithographic process involves photoresist coating, prebaking

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 16

    Lithographic

    Processes

    Pattern generation and transfer

    Circuit design Pattern data Master mask set


    Working mask set Pattern on wafers

    Increasing device density reducing minimum feature size


    Through-put consideration

    Wafer with IC Chips

    Patterning by lithography and wet etching


    Mask

    Etching of Al film

    Cr patterned film
    transparent glass

    photoresist

    Si

    Al film
    SiO2 film

    Pattern transfer
    to photoresist

    Si
    UV exposure
    Develop solution

    Si

    Si

    Si

    Photoresists
    Chemical/texture change upon exposure to light (UV), X-ray, e beam

    Sensitivity
    Adhesive
    Etch resistance
    Resolution

    Negative resists: long-chain organic polymers, cross-linked


    upon UV exposure
    Kodak Microneg 747: polyisoprene rubber + photoactive agent
    Thickness 0.3 1 m, feature size 2 m due to solvent-induced
    swelling effect, hard to remove after using

    Positive resist: a mixture of alkali-soluble resin, photoactive


    dissolution inhibitor, and solvent
    PMMA (polymethylmethacrylate)
    Thickness 1 - 3 m, no solvent-induced swelling effect, feature
    size 2 m, easy to remove after using

    UV Sources:
    Hg-Xe lamp, ~ 250-290 nm
    Excimer lasers, deep UV, 200 nm (e.g. ArF, = 193 nm )

    Pathways for pattern transfer

    Design
    pattern

    Optical or ebeam writing

    Reticle Projection printing, Working


    masks step-and-repeat
    masks
    5-20
    1

    E-beam pattern
    generation
    No diffraction
    limitation, minimum
    feature size ~ 0.15 m
    Reducing the backscattering effects
    (proximity effects) by
    reducing beam energy
    Raster scan mode
    Vector scan mode

    Pattern transfer to wafer: Printing


    Contact printer: highest resolution (minimum feature size ~ 0.15 m),
    but damages to masks and/or wafer limit mask lifetime

    UV

    Mask
    photoresist

    Si

    SiO2 film

    Si

    Proximity gap printer: 2.5-25 m gap, compromising resolution


    (r d), minimum feature size 1 m

    Projection: flexible, no damage, limited resolution in single projection


    Step-and-repeat projection: high resolution in reduced area,
    acceptable throughput due to short exposure time of each frame

    A complete lithographic process


    Wafer with
    mask film (e.g.
    SiO2, Al)

    Photoresist
    coating (spin
    coating)

    Removal of
    exposed
    photoresist

    Postbake

    Etching of
    mask film

    Removal of
    unexposed
    resist

    Prebake
    (softbake)

    Mask
    alignment

    Development

    Exposure

    Next process
    (e.g. implantation,
    deposition)

    Contact to a diode
    (a) Lithography
    (b) Metallization
    (c),(d) lithography

    Lift-off Process
    Positive resist
    patterning
    Metal deposit
    Removal of
    resist and metal
    film above

    Capable of forming thick and narrow metal lines


    little damage to oxide surfaces

    Move to EUV
    Source
    Mercury lamp

    Excimer
    Laser

    Fluorine laser

    Name

    Wavelength (nm)

    Application feature size (nm)

    G-line

    436

    500

    H-line

    405

    I-line

    365

    XeF

    351

    XeCl

    308

    KrF

    248 (DUV)

    250 to 130

    ArF

    193

    150 to 70

    F2

    157

    < 100

    350 to 250

    Multilayer Resists

    R1, R2 sensitive to 1, 2

    Contrast enhancement

    Phase-Shifting Masks

    Resolution improvement ~ 2-4 times, pattern-dependent

    Electron
    Projectio
    n
    Printing
    System
    Direct e-beam
    writing: ~ 0.15m,
    sequential, only for the
    smallest features

    X-ray printing system

    Difficulties: photoresist and optical systems for X-ray

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