TUNNEL DIODE

Definition and Symbol:

It is a P-N junction
semiconductor
diode.
Offers
negative
resistance
when
forward biased.
Thin
depletion
region
generates
oscillations
at
microwave
frequencies.

Construction:
Heavily doped (i.e
thin
depletion
layer).
Germanium
and
gallium
arsenide
(GaAs) are mainly
used as they have
small
forbidden
gap
high
ion
mobility.

V-I Characteristics:

When applied potential is

zero

Contd
GaAs is heavily doped and forbidden
gap is very small.
For P-type semiconductor, fermi level
is very close to valance band, for Ntype it is very close to conduction
band.
Tunnelling current in both directions
are same.
No effective overall current flows.

Applied Potential between zero &

peak voltages

Contd
Energy of P-side decrease compared
to N-side.
Fermi level is empty due to
tunnelling into N-side.
Valance band electron on P-side is
lower than N-side.
Tunnelling current increases.

Applied potential equal peak

voltages
Voltage at which maximum tunnel
current is obtained.
Maximum when applied
equal to peak voltages.

voltages

Negative resistance region

With increase in forward bias
voltages, free electrons on N-side
increases.
They do not recombine with holes in
P-side.
Negative resistance occur which is
responsible
for
microwave
oscillations.

Applied voltage increases above

valley voltage

Tunnelling stops completely.

Behaves as normal diode.

Applications:
Mixer
The generate oscillations can be used as self
exited mixer.

Oscillator
Used as low power oscillators up to 100 GHz.

Logic Device
Binary switch
Logic gates

THANK YOU