EE-215

Lecture No 37, 38, 39

Electronic Devices & Circuits
Text Book: Chapter 05 (SEDRA/SMITH 6th Ed)
MOS Field-Effect Transistors (MOSFETs)

5.4 Applying the MOSFET in Amplifier Design

5.5 Small-Signal Operation and Models

Instructor: Dr. Farid Gul

Class: BEE 10AB
Electrical Engineering Department
1
 Obtaining a Voltage Amplifier :1
In saturation mode, the MOSFET is a
voltage-controlled current source

The input signal is voltage The vGS controls iD

The output signal is current

Transconductance
amplifier

How do we obtain a voltage

amplifier

?????
2
 Obtaining a Voltage Amplifier :2

• Voltage amplifier is obtained by

connecting a resistor RD b/w VDD and
the drain terminal

• iD converted to voltage iDRD

• Output taken b/w drain and ground

vDS  VDD  iD RD
vDS is inverted version of iDRD
shifted by VDD

3
 Voltage Transfer Characteristic (VTC) :1
Neglecting channel length modulation ,
iD in saturation region is given by :
1
iD  kn (vGS  Vt ) 2 a nonlinear
2 relationship

almost-linear amplification can be obtained

by appropriate biasing of the MOSFET

Coordinates of point B
1
vDS  VDD  kn RD (vGS  Vt ) 2
2
At point B
vGS  VGS B
; and
vDS  VDS B  VGS B  Vt
2kn RDVDD  1  1
thus VGS B
 Vt 
kn RD
4
 Voltage Transfer Characteristic (VTC) :2
At point A
VGS A
 Vt
VDS A
 VDD

iD in triode region is given by :

 1 2 
iD  k n (VGS  Vt )vDS  vDS 
 2 

 1 2 
 vDS  VDD  kn RD (VGS  Vt )vDS  vDS 
 2 

5
 Biasing MOSFET for Linear Amplification
• Biasing enables almost linear amplification
from the MOSFET
• Operation at point Q by appropriate
selection of VGS

• Coordinates of Q are VGS and VDS

k n RD VGS  Vt 
1
VDS  VDD 
2

Biasing the MOSFET amplifier

at a point Q located on the
segment AB of the VTC.

7
Linear Amplification

• Signal vgs superimposed on VGS

• Instantaneous value of vGS and
vDS are:

vGS (t )  VGS  v gs (t )

vDS (t )  VDD  k n RD vGS (t )  Vt 

1 2

2
8
 Small-Signal Voltage Gain

• For small vgs , the vds is related to vgs

by slope of VTC at point Q
• Slope of VTC at point Q is the small
signal voltage gain

dvDS
Av 
dvGS vGS  VGS

1
 vDS  vDD  k n RD(vGS  Vt )2
2

 Av   kn (VGS  Vt ) RD
or Av   kn VOV RD The negative gain signifies the
amplifier is inverting
9
 Small-Signal Voltage Gain
Av   kn VOV RD
Alternate expression for voltage gain

Recall that at point Q 2I D

1 kn 
I D  knVOV 2 2
VOV
2
Combining the two equations we get

I D RD
Av  
VOV 2
Upper limit on the gain is:

VDD
Av max 
VOV 2
10
 VTC by Graphical Analysis

VDD  vDS
iD 
RD

Graphical construction to determine the voltage transfer

characteristic of the amplifier
11
VTC

12
Operation of MOSFET as a Switch

1
rDS 
k n vOV
13
 Locating the Bias Point

• Bias point Q1 is too

close to VDD; restricts
positive signal swing
at the drain
• Bias point Q2 is too
close to the boundary
of the triode region
and might not allow
for sufficient negative
signal swing

14
Small Signal Operation and Models

15
The ac Characteristic

 Conceptual circuit utilized to study

the operation of the MOSFET as a
small-signal amplifier.

 Small signal condition

v gs  2VOV

16
 The DC Bias Point
Setting vgs to zero Channel length
modulation
I D  k n VGS  Vt 
1 2
neglected
2
1
 k nVOV2

VDS  VDD  I D RD
VDS  VOV

VDS should be b/w VOV and VDD to

allow for sufficient signal swing

17
Signal Current in the Drain
Applying signal vgs

vGS  VGS  vgs

iD  k n VGS  v gs  Vt 
1 2

iD  k n VGS  Vt   k n VGS  Vt vgs  k n vgs

1 2 1 2

2 2

id  v gs id  v 2
gs
Bias current
ID Undesirable part of
signal current
18
 Signal Current in the Drain
iD  k n VGS  Vt   k n VGS  Vt vgs  k n vgs
1 2 1 2

2 2

id  v gs id  v 2
gs
Bias current
ID Undesirable part of signal current,
represents nonlinear distortion
To minimize nonlinear distortion,
vgs should be kept small so that

 k n VGS  Vt vgs
1 2
k n vgs
2
 vgs  2VGS  Vt 
 vgs  2VOV
19
 The MOSFET Transconductance
1
    1
iD  k n VGS  Vt  k n VGS  Vt vgs  k n vgs
2 2

2 2
Under the small signal condition the
last term may be neglected

 iD  kn VGS  Vt   kn VGS  Vt vgs

1
 I D  id
2

id  kn VGS  Vt vgs  kn VGS  Vt 

id
vgs
The transco nductance is :
 kn VGS  Vt   knVOV
id
gm 
vgs
20
 Graphical Interpretation of Small –Signal
Operation
1
iD  kn (vGS  Vt ) 2
g m  knVOV 2

gm is equal to the slope of iD – vGS

characteristic curve at the bias point

iD
gm 
vGS vGS VGS

21
 Alternate expression for gm
g m  knVOV  k W L VOV
'
n
k n W L VOV
1 '
 ID  2

2
2I D
or VOV 
gm  '
2k W L I D
n
k n' W L 

2I D
kn' W L  
2I D VOV
gm 
VOV gm is dependent on three design
parameters---- W/L, VOV, and ID; two of
which can be chosen independently by
the designer
22
 2I D
gm 
VOV

ID
gm  1
V
2 OV

Slope of the tangent at

bias point intersects the
vOV axis at ½ VOV

23
 The Voltage Gain
vDS  VDD  iD RD

Under the small signal condition

vDS  VDD   I D  id  RD

The signal component is

vds  id RD   g mvgs RD

The voltage gain is

Av   g m RD
24
 The Small-Signal Models

(a) Neglecting the channel-length modulation effect

(b) Including the effect of channel-length modulation, modeled by
output resistance ro = |VA| /ID.

25
 The T Equivalent Model

• Development of the
T equivalent-circuit
model for the
MOSFET.
• For simplicity, ro has
been omitted.

26
 The T Equivalent Models

(a) The T model of the MOSFET augmented with the drain-to-source

resistance ro.
(b) An alternative representation of the T model.

27
 Assignment
• Work out and understand
Examples 5.9 and 5.10

• Do Exercises 5.17 and 5.18

28
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