TON DUC THANG UNIVERSITY

FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING

ELECTRONIC CIRCUIT DESIGN 2

CODE: 402060

Chapter 2. High-Frequency Response of

Transistor Amplifiers

Nguyen Huu Khanh Nhan, PhD.

 OBJECTIVES
 The internal capacitive effects present in the
MOSFET and the BJT.
 The high-frequency limitation on the gain of the CS
and CE amplifiers and how the gain fall off and the
upper 3-dB frequency fH are mostly determined.
 Powerful methods for the analysis of the high
frequency response of amplifier circuits of varying
complexity.
 The high-frequency performance of the source and
emitter followers.
 Circuit configurations for obtaining wideband
amplification.
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 CHAPTER 2. THE HIGH-FREQUENCY
RESPONSE IN TRANSISTOR AMPLIFIERS
2.1. High Frequency Response of the CE and CS Amplifiers
2.1.1. The High-Frequency Model of the FET and the BJT
2.1.2. Common Emitter (CE) amplifiers
2.1.3. Common Source (CS) amplifiers
2.2. Determining the 3-dB Frequency fH
2.2.1. Using Short-Circuit Time Constants
2.2.2. Using Open-Circuit Time Constants
2.3. High Frequency Response of the CB and CG Amplifiers
2.3.1. Common Base (CB) amplifiers
2.3.2. Common Gate (CG) amplifiers
2.4. High Frequency Response of the CC and CD Amplifiers
2.4.1. Common Collector (CC) amplifiers
2.4.2. Common Drain (CD) amplifiers
2.5. High-Frequency Response of the Cascode Amplifiers
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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS
2.1.1. The High-Frequency Model of the FET and the BJT
 The High-Frequency FET Model
• MOSFET has internal capacitance (this is apparent).
– The gate capacitive effect: The gate electrode forms a
parallel plate capacitor with the channel.
– The source-body and drain-body depletion layer
capacitances: These are the capacitances of the
reverse-biased pn-junctions.
• Previously, it was assumed that charges are acquired
instantaneously - resulting in steady-state model.
– This assumption poses problem for frequency analysis.
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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS
2.1.1. The High-Frequency Model of the FET and the BJT
 TheHigh-Frequency FET Model
The Gate Capacitive Effect

The Junction Capacitances

We have the source-body capacitance, Csb

We have the drain-body capacitance, Cdb

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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS
2.1.1. The High-Frequency Model of the FET and the BJT
 The High-Frequency FET Model Output current

Gate-source voltage

Current gain

Unity gain frequency

with Cdb neglected (to simplify analysis).

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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS
2.1.1. The High-Frequency Model of the FET and the BJT
 TheHigh-Frequency BJT Model
• Like MOSFET, previously it was assumed that
transistor action was instantaneous.
– steady-state model
– neglects frequency-dependence
• Actual transistors exhibit charge-storage.
• An augmented BJT model is required to examine this
dependence.

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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS
2.1.1. The High-Frequency Model of the FET and the BJT
 TheHigh-Frequency BJT Model
The high-frequency hybrid-π model

The short-circuit collector current

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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS
2.1.1. The High-Frequency Model of the FET and the BJT
 The High-Frequency BJT Model

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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS
2.1.1. The High-Frequency Model of the FET and the BJT
 The High-Frequency BJT Model

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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS
 Miller’s Theorem

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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS

• Miller’s Theorem states that impedance Z can be

replaced with two impedances:
– Z1 connected between node 1 and ground
• Z1 = Z/(1-K)
– Z2 connected between node 2 and ground
where
• Z2 = Z/(1-1/K)

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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS
 Miller’s Theorem

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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS
2.1.2. Common Emitter (CE) amplifier
Midband gain AM

Transfer function:

The 3dB frequency fH is given by

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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS
2.1.2. Common Emitter (CE) amplifier

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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS
2.1.3. Common Source (CS) amplifier

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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS
2.1.3. Common Source (CS) amplifier

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 2.1. HIGH FREQUENCY RESPONSE OF
THE CE AND CS AMPLIFIERS
2.1.3. Common Source (CS) amplifier

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 2.2. DETERMINING THE 3-dB
FREQUENCY fH
2.2.1. Using open-Circuit Time Constants
FH(s) expressed in the alternative form

The coefficient b1 is given by

b1 is called open-circuit time constants,

the upper 3-dB frequency will be approximately equal

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 2.2. DETERMINING THE 3-dB
FREQUENCY fH
2.2.1. Using open-Circuit Time Constants

The resistance Rgd seen

by Cgd

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 2.2. DETERMINING THE 3-dB
FREQUENCY fH
2.2.2. Using short-Circuit Time Constants
The frequency response:

e1 can be obtained by considering the various

capacitances in the frequency equivalent circuit one
at a time while setting all other capacitors to ∝
(short circuits).Determine ωL
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 2.3. HIGH FREQUENCY RESPONSE OF
THE CB AND CG AMPLIFIERS
2.3.1. Common Base (CB) amplifiers

 VS and RS represent the

Thevenin equivalent of the circuit at
the input side, including the output
circuit of the preceding amplifier
stage (if any) and the bias network
of the transistor Q (if any).
 RL represents the total resistance
between the drain (the collector)
and signal ground.

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 2.3. HIGH FREQUENCY RESPONSE OF
THE CB AND CG AMPLIFIERS
2.3.1. Common Base (CB) amplifiers

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 2.3. HIGH FREQUENCY RESPONSE OF
THE CB AND CG AMPLIFIERS
2.3.2. Common Gate (CG) amplifiers

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 2.3. HIGH FREQUENCY RESPONSE OF
THE CB AND CG AMPLIFIERS
2.3.2. Common Gate (CG) amplifiers

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 2.3. HIGH FREQUENCY RESPONSE OF
THE CB AND CG AMPLIFIERS
2.3.2. Common Gate (CG) amplifiers

and

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 2.4. HIGH FREQUENCY RESPONSE OF
THE CC AND CD AMPLIFIERS
2.4.1. Common Collector (CC) amplifiers

From S. Sedra & C. Smith [2014],

Microelectronic circuits, 7th edition,
Oxford University Press.

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 2.4. HIGH FREQUENCY RESPONSE OF
THE CC AND CD AMPLIFIERS
2.4.1. Common Collector (CC) amplifiers

Rµ is the parallel equivalent of R’sig and the input resistance

The resistance Rп seen by

The 3 dB frequency fH of the emitter follower

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 2.4. HIGH FREQUENCY RESPONSE OF
THE CC AND CD AMPLIFIERS
2.4.2. Common Drain (CD) amplifiers
From S. Sedra & C. Smith [2014],
Microelectronic circuits, 7th edition,
Oxford University Press.

19/11/2015 402060 – Chapter 2. High-Frequency Response of Transistor Amplifiers 29

 2.4. HIGH FREQUENCY RESPONSE OF
THE CC AND CD AMPLIFIERS
2.4.2. Common Drain (CD) amplifiers
we can employ the method of open-circuit time
constants to obtain an estimate of fH.
The resistance Rgd seen by Cgd is given by

The resistance Rgs seen by Cgs

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 2.5. HIGH-FREQUENCY RESPONSE OF
THE CASCODE AMPLIFIERS
 A cascode amplifier using BJTs

From S. Sedra & C. Smith [2014],

Microelectronic circuits, 7th edition,
Oxford University Press.

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 2.5. HIGH-FREQUENCY RESPONSE OF
THE CASCODE AMPLIFIERS
 A cascode amplifier using BJTs

From S. Sedra & C. Smith [2014],

Microelectronic circuits, 7th edition,
Oxford University Press.

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 2.5. HIGH-FREQUENCY RESPONSE OF
THE CASCODE AMPLIFIERS
 A cascode amplifier using MOSs

Note that Cdb1 and Cgs2

appear in parallel, and
we shall combine them
in the following analysis.
Similarly, CL and Cgd2
appear in parallel and
will be combined.

From S. Sedra & C. Smith [2014],

Microelectronic circuits, 7th edition,
Oxford University Press.

19/11/2015 402060 – Chapter 2. High-Frequency Response of Transistor Amplifiers 33

 2.5. HIGH-FREQUENCY RESPONSE OF
THE CASCODE AMPLIFIERS
 A cascode amplifier using MOSs
Determining the 3-dB frequency fH is to employ the open-
circuit time-constants method:
 Capacitance Cgs1 sees a resistance Rsig.
 Capacitance Cgd1 sees a resistance Rgd1

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 2.5. HIGH-FREQUENCY RESPONSE OF
THE CASCODE AMPLIFIERS
 A cascode amplifier using MOSs
 With the resistances determined, the effective time
constant can be computed as t H

 The 3-dB frequency fH as

 We rewrite

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 2.5. HIGH-FREQUENCY RESPONSE OF
THE CASCODE AMPLIFIERS
 A cascode amplifier using MOSs
In the case when Rsig is small, the Miller effect in will not be
of concern.

19/11/2015 402060 – Chapter 2. High-Frequency Response of Transistor Amplifiers 36

 2.5. HIGH-FREQUENCY RESPONSE OF
THE CASCODE AMPLIFIERS
 A cascode amplifier using MOSs

From S. Sedra & C. Smith [2014],

Microelectronic circuits, 7th edition,
Oxford University Press.

19/11/2015 402060 – Chapter 2. High-Frequency Response of Transistor Amplifiers 37

 2.5. HIGH-FREQUENCY RESPONSE OF
THE CASCODE AMPLIFIERS
 A cascode amplifier using MOSs

19/11/2015 402060 – Chapter 2. High-Frequency Response of Transistor Amplifiers 38

 SUMMARY

Equivalent circuit
for small signal

Transfer function
formulas
Transistor
The effects
amplifier Gain of transfer
of internal
high function
capacitors
frequency
High cut-off
frequency

Bode plot

19/11/2015 402060 – Chapter 2. High-Frequency Response of Transistor Amplifiers 39

 HOMEWORKS

From S. Sedra & C. Smith [2014], Microelectronic

circuits, 7th edition, Oxford University Press.

Section 10.2(pp.792): the High-Frequency Model

of the MOSFET and the BJT
 HWs are problems from 10.13 to 10.50

 Reading assignment: 12.1 (pp. 922) to 12.6 (pp.

945)

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 nguyenhuukhanhnhan@tdtu.edu.vn

19/11/2015 402060 – Chapter 2. High-Frequency Response of Transistor Amplifiers 41