TUNED AMPLIFIER

Dr.N.Herald Anantha Rufus

Asso. Prof./ECE,
Vel Tech Rangarajan Dr.Sagunthala R & D
Institute of Science and Technology
DEFINITION:-

An amplifier circuit in which the load circuit is a tank circuit

such that it can be tuned to pass or amplify selection of a
desired frequency or a narrow band of frequencies, is known
as Tuned Circuit Amplifier.
 CHARACTERISTICS OF TUNED AMPLIFIER
 Tuned amplifier selects and amplifies a single
frequency from a mixture of frequencies in any frequency
range.

 A Tuned amplifier employs a tuned circuit.

 It uses the phenomena of resonance, the tank circuit which is
capable of selecting a particular or relative narrow band of
frequencies.
 The centre of this frequency band is the resonant frequency
of the tuned circuit .
 Both types consist of an inductance L and capacitance C
with two element connected in series and parallel.
 RESONANCE CIRCUITS:
When at particular frequency the inductive reactance
became equal to capacitive reactance and the circuit then
behaves as purely resistive circuit. This phenomenon is
called the resonance and the corresponding frequency is
called the resonant frequency.

L
C

Tu n e d c ircuit
 Resonance
circuits

Series Parallel
 Classification of
Tuned Circuits

Small signal Large signal

amplifier, low amplifier, low
power, radio power, radio
frequency frequency

Class A Class B&C

Single Tuned Double tuned Shunt peaked

circuit(one circuit(two Staggered tuned with
parallel circuit tuned circuit Tuned amplifier higher band
is employed) are employed) width
CLASSIFICATION OF TUNED AMPLIFIER

Tuned
amplifier

Small Signal Large signal

Amplifier Amplifier

Single Double Stagger

Tuned Tuned Tuned
Amplifier Amplifier Amplifier
 CLASSIFICATION OF TUNED
AMPLIFIERS
 Small Signal Tuned Amplifiers :- They are used to amplify
the RF signals of small magnitude.
They are further classified as:
(a)Single Tuned Amplifiers:- In this we use one
parallel tuned circuit in each stage.
(b)Double Tuned Amplifiers:- In this we use two
mutually coupled tuned circuits for every stage
both of tuned circuits are tuned at same freq.
(c)Stagger Tuned Amplifiers:- It is a multistage
amplifier which has one parallel tuned circuit for
every stage but tuned frequency for all
stages are slightly different from each other.
(2) Large signal tuned amplifiers:-
They are meant for amplifying large signals
in which large RF power is involved & distortion
level is also higher. But tuned circuit itself
eliminates most of the harmonic distortion.
 BAND PASS AMPLIFIER:
 An amplifier designated to pass a definite band
of frequencies with uniform response.


The new band pass amplifier perform both
function of low noise amplifier (LNA) & band
pass filter is proposed for application of
900MHz RF Front – end in wireless receivers .
BAND PASS AMPLIFIER:
It is having two differential stage comprising two
transistor.
 BAND PASS AMPLIFIER

Main function of band pass filter to remove the
band noise, which also contributes to the
rejection of image signals.
 Finally a band pass amplifier amplifies only
a band of frequency which lie in bandwidth of
amplifier & thus named as band pass
amplifier .
BAND PASS FILTER
SERIES RESONANT CIRCUIT
It is the circuit in which all the resistive and
reactive components are in series.
SERIES RESONANT LC
 SERIES RESONANT CIRCUIT
 Impedance Of The Circuit: -
Z = { R2 + (XL – Xc)2}1/2
Z = { R2 + (ωL – 1/
ωC)2}1/2

 For resonant frequency:-

(XL =
XC )
XL =

ωL
SERIES RESONANT CIRCUIT
Since at resonance,

XL =
Xc

2 π frL = 1 / 2ПfrC

fr = 1/2π

√LC ωr =
RESONANCE CURVE OF SERIES
RESONANT CIRCUIT :
 QUALITY FACTOR
Voltage magnification that circuit produces at
resonance is called the Q factor.

Voltage Magnification = / Imin R

Imax XL
= XL/ R

At Resonance
XL/R

=
 IMPORTANT POINTS
(1) Net reactance , X = 0.
(2) Impedance Z=R.
(3) Power factor is unity.
(4) Power expended = 6 watt.
Current is so large & will produce large voltage
across inductance & capacitance will be equal in
magnitude but opposite in phase.
Series resonance is called an acceptor circuit
because such a circuit accepts current at one
particular frequency but rejects current at other
frequencies these circuit are used in Radio –
receivers .
PARALLEL OR CURRENT RESONANCE
 PARALLEL OR CURRENT
RESONANCE
When an inductive reactance and a capacitance are
connected in parallel as shown in figure condition may
reach under which current resonance (also known as
parallel or anti- resonance ) will take palace. In practice,
some resistance R is always present with the inductor.
Such circuit is said to be in electrical resonance when
reactive(watt less) components of line current becomes
zero. The frequency at which this happened is known as
resonant frequency.
Current will be in resonance if reactive component of
R- L branchIR-L sinФ R-L = Reactive component of
capacitive branch, neglecting leakage reactance of
capacitor C
 FREQUENCY V/S
IMPEDANCE CURVE
FOR LCR CIRCUIT
RESONANCE CURVE OF PARALLEL
RESONANT CIRCUIT :

With high resistance

frequency
Resonant
current

With low resistance

fR
 IMPORTANT POINTS FOR CURRENT OR
PARALLEL RESONANCE:
(1) Net susceptance is zero
(1 / XC ) = ( XL /
Z2 )
(2) Admittance =
Conductance
(3)Power factor is unity as reactive ( wattles)
components
= (Lof/ the
CR)current is zero
ZMax
(4) Impedance= is purely
V / ( resistive
L/CR ) ( in phase with applied
(5)
ILine(Min)
voltage)
(6) f = (1/2П) * ( √(1/LC) – (R2/ L2)) Hz

The frequency at which the net susceptance curve

crosses the frequency axis is called the resonant
frequency .
At this point impedance is maximum or admittance
is minimum & is equal to G , consequently (I) Line is
minimum .
 Band with of parallel resonant circuit
B.W. = (f2 – f1)
 Quality Factor

Q = XL / R
= 2ПfrL / R

Quality factor determines sharpness of resonance

curve and selectivity of circuit.
Higher the value of quality factor more selective the
tuned circuit is.
CHARACTERSTICS OF PARALLEL
OR CURRENT RESONANCE
 Admittance is equal to conductance.
 Reactive or watt less component of line current is zero
hence circuit power factor is unity.
 Impedance is purely resistive , maximum in
magnitude and is equal to L/CR.
 Line current is minimum and is equal to

V / (L/CR)
in magnitude and is in phase with the applied voltage.
(1) SINGLE TUNED AMPLIFIER
Vc
c

C L

Cin R1
Cc RL
+

R2
Vs
Re Ce
 (1) SINGLE TUNED AMPLIFIER
• Output of this amplifier may be
taken either withthe help of Capacitive
or a parallel tuned circuits is connected in the
collector circuit.
• Tuned voltage amplifier are usually employed in
RF stageof wireless communication where
such circuits are assigned , the work
of selecting the desired carrier
frequency and of amplifying the permitted pass-
band around the selected carrier frequency.
 SINGLE TUNED AMPLIFIER
 Tuned amplifier are required to be
R1, R2, & Re = For biasing & stabilization circuit.
Ce = By pass capacitor
L-C = Tuned circuit connected in
collector, the impedance of which
depend
upon frequency, act as a collector
load.
If i/p signal has same frequency as resonant frequency
of L-C circuit . Large amplification will be obtain
because of high impedance of L-C ckt.
SINGLE TUNED AMPLIFIER
USING FET
SINGLE TUNED AMPLIFIER USING FET
 In the shown figure the single tuned amplifier is
depicted using a field effect transistor.
 The value of L and C is selected as per the desired
frequency level.
 One of the components either L or C is variable so
as to adjust the variable frequency.
 CIRCUIT OPERATION
THE HIGH FREQUENCY SIGNAL TO BE APPLIED BETWEEN BASE
& EMITTER. THE RESONANT FREQUENCY OF CIRCUIT IS MADE
EQUAL TO FREQUENCY OF I/P SIGNAL BY VARYING L OR C .

NOW TUNED CKT WILL OFFER VERY HIGH IMPEDANCE TO

THE SIGNAL FREQ. & THUS LARGE O/P APPEAR ACROSS IT.
AV = ( Β RAC )/ RIN
{ RAC = TUNED CIRCUIT IMPEDANCE}
= Β(L/CR)/ RIN
AV = ΒL / ( CRRIN )

BANDWIDTH = (F2-
F1 )

THE AMPLIFIER WILL AMPLIFY ANY FREQ. WELL WITHIN THIS

 LIMITATION

This tuned amplifier are required to be highly selective.
But high selectivity required a tuned circuit with a high Q-
factor .

 A high Q- factor circuit will give a high Av but at the

same time , it will give much reduced bandwidth because
bandwidth is inversely proportional to the Q- factor .


It means that tuned amplifier with reduced bandwidth
may not be able to amplify equally the complete band of
signals & result is poor reproduction . This is called
potential instability in tuned amplifier.
DOUBLE TUNED CIRCUIT :
 DOUBLE TUNED CIRCUIT

The problem of potential instability with a single
tuned amplifiers overcome in a double tuned amplifier
which consists of independently coupled two tuned
circuit :
(1) L 1C1 in collector circuit
(2)ALchange
2 C2 in output circuit of two tuned circuit
in the coupling
results in change in the shape of frequency response .
By proper adjustment of coupling between two coils of
two tuned circuits, the required results are :
 High selectivity
 High voltage gain
 Required bandwidth
 CIRCUIT OPERATION
 The resonant freq. of tuned circuit connected in collector
circuit is made equal to signal freq. by varying the value of C1.
 Tuned circuit (L 1C1) Offer very high impedance
to signal frequency & this large o/p is developed
across it.
 The o/p of (L1C1) is transferred to (L2C2)
through mutual inductance.
 Thus the freq. response of double tuned circuit depends
upon magnetic coupling of L1 & L2.
 Most suitable curve is when optimum coefficient of coupling
exists between two tuned circuit .The circuit is then highly
selective & also provides sufficient amount of gain for a particular
band of frequency.
 Resonance curve of Parallel
Resonant circuit:
Voltage
gain AV

K=2
K=1.5
Loose Critical
K=1
fr coupling coupling

Frequency fr
 SHUNT PEAKED CIRCUITS FOR INCREASED
BANDWIDTH
For expanding bandwidth we use various combinations of BJT &
FET(MOS) in series or shunt so that we can use Stagger tuned
amplifiers.

Shunt Peaking
If a coil is placed in parallel (shunt) with the output signal
path, the technique is called SHUNT PEAKING. R1 is the
input- signal-developing resistor. R2 is used for bias and
temperature stability. C1 is the bypass capacitor for R2. R3 is
the load resistor for Q1 and develops the output signal. C2 is
the coupling capacitor which couples the output signal to the
next stage.
SHUNT PEAKED CIRCUITS FOR
INCREASED BANDWIDTH :
 STAGGER TUNED AMPLIFIERS
 Itis a multistage amplifier which has one parallel resonant
circuit for every stage, while resonant frequency of every
stage
is slightly different from previous stages.
From circuit diagram it is clear that first stage of this
amplifiers has a resonant circuit formed by L1 & C1 that
f1 = 1 / (2Π √L1 C1)
The o/p of stage is applied to second stage which is tuned
to slightly higher frequency.
f2 = 1 / (2Π √L2 C2)

Second stage amplifiers the signals of
frequency f2 by maximum amplitude while other
frequency signal are amplified by less quantity .
Thus frequency response

 Curve of second stage has a peak of f2 which

is slightly higher than f1.
STAGGER TUNED AMPLIFIERS :
STAGGER TUNED AMPLIFIER
Freq. response Freq. response
of first stage of second stage
Voltage

Over all
response

f1 f0 f2

Frequency
 STAGGER TUNED AMPLIFIERS

Over all response of these two stage is obtained

by combining individual response & it exhibits
a maximum flatness around the center frequency
f0 . Thus overall bandwidth is better
than individual stage.
Since two stages are in parallel (shunt) & overall
bandwidth is increased thus, it behaves like shunt
circuits for the increased bandwidth.
 LARGE SIGNAL
(NARROW BAND AMPLIFIER) TUNED
AMPLIFIER

Single & double stage amplifier are not suitable for
applications involving larger RF power , because of
lower of efficiency of class A operation (single
double) such as for excitation of transmitting antenna.


For such application larger signal tuned amplifier
are employed because they are operation in class C
operation that has high efficiency & capable of
delivering more power in comparison to that of class
A operation .
 CIRCUIT DIAGRAM OF LARGE SIGNAL
(NARROW BAND AMPLIFIER) TUNED
AMPLIFIER :

V c c

C L

C c
C s
+

R L
V s R B

T u n e d c l a s s C a m p lif i e r
 LARGE SIGNAL
(NARROW BAND AMPLIFIER)
TUNED AMPLIFIER

The resonant tuned circuit is tuned to freq. of i/p
signal . When circuit has a high Q- factor , parallel
resonance occur approximate freq. :
f = 1 / (2 π √LC)

At resonant freq. the impedance of parallel circuit is

very large & purely resistive.
 LARGE SIGNAL (NARROW BAND
AMPLIFIER) TUNED AMPLIFIER

Higher the Q of circuit faster gain drops on either
side of resonance freq.


A large Q leads to small bandwidth equal top
sharp tuning this amplifier has Q>> 10,This means
Bandwidth is less than 10% of fr & for this reason , it
is called as narrow band amplifier.
COMPARISON BETWEEN TUNED AND AF
AMPLIFIER
Tuned Amplifier AF Amplifier
 Ithas to amplify narrow  Works with a complete
band of frequencies audio frequency range
defined by the tuned
load at the collector  More compact

 They are bulky and  Amplifies sound signals

costlier and act as drive for loud
speakers
 Used in radio transmitters

and receivers, and

television receivers
circuits .
APPLICATIONS OF TUNED AMPLIFIER
Tuned amplifiers serve the best for two purposes:
a)Selection of desired frequency.
b)Amplifying the signal to a desired level.

USED IN:
 Communication transmitters and
receivers.
 In filter design :--Band Pass, low pass, High
pass and band reject filter design.
ADVANTAGES

 It provides high selectivity.

 It has small collector voltage.

 Power loss is also less.

 Signal to noise ratio of O/P is good.

 They are well suited for radio transmitters and
receivers .
DISADVANTAGES
 They are not suitable to amplify audio
frequencies.
 If the band of frequency is increase then design
becomes complex.
 Since they use inductors and capacitors as tuning
elements, the circuit is bulky and costly.
Q-1) A single tuned amplifier consist of tuned circuits
having R=5ohm,L=10mh,c=0.1mf. Determine

a) resonant frequency.
b) quality factor of tank circuit
c) band width of amplifier
Ans - Given data-:
R=50ohm;
L=10mh;
C = 0.1mf
We know:
Resonant frequency = 1/ 2 π √[ (1/LC) – (R2 / L2 ) ]
= 1 / 2 π √[(1/10*10-3 - 25/100*10-6)
]
= 5.034 KHz
Q= 2 π * 5.034 * 10-3 * 10 * 10-3 / 5
= 63.227

BW = FR /Q = 5.034 / 63.227
= 79.62KHz
RESULT:- F = 5.034 KHz
r
Q = 63.227
BW =
79.62KHz
Q2.In a class c amplifier ckt C=300pf,L=50mH,R=40ohm,
RL =4M ohm.
Determine:-
a) Resonant frequency
b) D.C load
c) A.C load
d) Quality factor

Ans :- Given:
C=300pf

L=50mH
R=40ohm
RL =4M ohm
Fr = 1/2 π √ LC
= 1/2 π √(50 * 10-6 * 300 * 10 -12

)
= 1.3 MHz

Rdc = 40 ohm
XL = 2 π fr L
= 2* 3.14
* 1.3 *
106 * 50 *
10-6
= 408.2

Qdc = 408.2/
40
Rac = Rp ll RL
Rp = Qdc * XL
= 10.205 *
= 408.2
4165.681
RL = 4* 106
Rac = 4161.34

Qac = [Rac / XL ]
= 4161.34/408.2
= 10.194
Result: -
Fr = 1.3 MHz
Qdc = 10.205
Qac = 10.194
Q. A circuit is resonant resonant at 455 khz and has a 10khz
bandwidth. The inductive reactance is 1255ohm. What is
the parallel impedance of the circuit at resonance?

Solution:
Given that:
fr =455 khz
Frequency BW=10khz and XL
Let zp be the value of impedance at
resonance We know that the value of
bandwidth

(BW)=fr /Q
So, 10*103 =455*103 /Q
Q=45.5
1255=2∏fr L=2859*103 L
L=1255/(2859*103)
L=.439*103 H

Value of capacitance reactance at resonance:

XC =XL
=1255Ω
1/2∏fr = 1255
Therefore, C=278.7*10-12 F

And value of circuit impedance at

resonance zp =L/CR
=0.439*103 / (278.7*10-12)*27.6
=57*103
=57 kΩ
RESULT: the parallel impedance at
Q: A FET has gm=6 mA/v, has a tuned anode load
consisting of a 400 microH inductance of 5 ohm in parallal
with a capacitor of 2500pf. Find:-
1. The resonant frequency
2. Tuned circuit dynamic resistance
3. Gain at resonance
4. The signal bandwidth

Solution:-
5. Fr => resonant frequency

= 1/(2π√(LC))
= 0.159/ √ (400*2500)
= 1.59*105 Hz = 0.159 MHz
2. Rd => tuned circuit dynamic resistance
= L/CR
= 400/(2500*5)
 = 106 * 80/2500
= 0.032 * 106
= 32 k ohm

3. Av = -gm rd = 6*32 = -192

4. BW= fr /Q

Q = Wr L/ R
= (2 π * 0.159 * 10 -6 * 400 * 106) / 5 =
79.92 BW = 0.159/ 79.92
= 1.98 KHz
RESULT:
Resonant frequency=0.159MHz
Dynamic
Resistance=32kΩ
Resonance gain=-192
Bandwidth=1.98khz
Q: A tuned voltage amplifier, using FET with rd = 100 kohm and
gm = 500 micro s has tuned circuit, consisting of L= 2.5 mH , C =
200 pF , as its load. At its resonant frequency , the circuit offers
an equivalent shunt resistance of 100 kohm. For the amplifier
determine:-
1. Resonant gain
2. The effective Q
3. The Bandwidth

Solution: -
Given that: gm= 500
Shunt resistance=100 kohm
1. Resonant gain:-
Av = -gm (rd ll Rd )/(1 + jf/fr)
Av =
500(100 ll 100)/(1 + j1) Av =
2. Effective Q: -
= L/CR
Qeff
R = 100 ll 100
Q = 2.5* 103 /(200*10-12 * 50 * 103)
= 2.5 * 102
3. Bandwidth: -
BW = fr
/Qeff
fr = 1/2 π √ LC
= 225 kHz
BW = 225/ 2.5* 102
= 900 Hz
RESULT:
Resonant gain=17.68
Qeff =2.5*102
BW = 900 Hz