VIETNAM NATIONAL UNIVERSITY, HO CHI MINH CITY

UNIVERSITY OF SCIENCE
FACULTY OF MATERIALS SCIENCE AND TECHONLOGY

SEMINAR:
MEMORY & STORAGE
CONTENTS Supervisor: PhD. PHẠM KIM NGỌC
Group 5
I. OVERVIEW
Trương Minh Nhật 1719134
II. OPERATION OF STORAGE
Phạm Phú Quân 1719157
III. TYPE OF STORAGE
Võ Quang Triểu 1719219
IV. EXTERNAL STORAGE EQUIPMENT Huỳnh Quang Tuyến 1719233

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 I. OVERVIEW

2
 I. OVERVIEW
An economical
solution, but
gradually
Max Capacity: Storage up
replaced by
960 bits to 2MB
floppy disk

1890 1932 1951 1963

1956

The first
"modern"
Widely used: hard drive
1950s

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 I. OVERVIEW
One of the first mass-
produced storage
devices • First one: 64MB
Widely used in 1900s • Photo and video • Anywhere
• Anytime
• Anydevice
• Infinite

1971 1999 2006

1982 2000

• First one: 8MB

(Compact Disk • Cheap
Read-Only • Portable
Memory) still in • Secure
use today
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 I. OVERVIEW
Memory: Volatile memory Storage: Non-volatile memory

only maintains its data while the does not lose content when power is
DIFFERENT device is powered lost

much faster than the other kinds of suitable for long-term information

storage in a computer storage
more commonly referred to as
temporary memory

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 II
TYPE OF OPERATION
1. Optical storage.
2. Magnetic storage.
3. Flash memory.

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 1. Optical Storage 1.1. Structure layer

Use laser to create a non-reflective area on

the disc.
A CD-R disc therefore has an extra layer
that the laser can modify
When the beam travels from the direction
of the base and reaches the pits, the pits on
the metal layer reflects the beam like a
mirror. The depth of the pits is one - fuorth
of the wavelength of the laser.

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 1. Optical Storage 1.1. 1.2. Principle

• The laser rays reflected by the pits and the lands have
a path difference of half the wavelength.
• It leads to destructive interference, that is, the two
rays cancel each others and no reflected ray is
resulted, and this produces a '1' digit.
• The path difference is zero for two rays both reflected
by the pits, or both by the lands.
• No destructive interference occures and we say it is a
'0' digit.
• Therefore we have digit '1' at the edge of pits and
digit '0' elsewhere.

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 2. Magnetic Storage
• Divided into billions of tiny areas.
• Each one of those areas can be independently
magnetized (to store a “1”) or demagnetized (to store a
“0”).
• Magnetism is used in computer storage because it goes
on storing information even when the power is
switched off.
• Bits of data are arranged in concentric, circular paths
called tracks.
• Each track is broken up into smaller areas called
sectors.

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 3. Flash Memory

• NOR flash memory is one of two types

of non-volatile storage technologies.
• NAND is the other.
• Non-volatile memory doesn't require
power to retain data.
• NOR and NAND use different
logic gates -- the fundamental building
block of digital circuits -- in each
memory cell to map data.
• NOR flash is faster to read than NAND
flash, but it's also more expensive and
it takes longer to erase and write new
data.
• NAND has a higher storage capacity
than NOR.

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 3. Flash Memory 1. NOR Flash

• NOR Flash use “hot electron injection” effect.

• Each memory cell is the transitior.
• They storage electron in the trapping layer with full
• The Flash NOR rececive the data and transfer it to
each single cell.
• But it have a limitation is they must wipe out the data
before thay receive new data.

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 3. Flash Memory 1.1. 1.2. NAND Flash

• NAND Flash similar like flash

NOR but different in logic gate.
• Compared to NOR flash, replacing
single transistors with serial-linked
groups adds an extra level of
addressing.
• Execute-in-place applications, on
the other hand, require every bit in
a word to be accessed
simultaneously. This requires
word-level addressing.

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 3. Flash Memory 1.1 1.2 1.3. V-NAND Flash

• V-NAND mean Vertical NAND. • The memory cells group in 1 stack.

• V-NAND have a memory cell but • Each stack is one level energy.
in vertical instead straight line.

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 3. Flash Memory 1.1 1.2 1.3. V-NAND Flash

• To increase the performance of devices, they developed new types of V-NAND Flash
increase more level energy with is new “0” and “1”.
• Today we have SLC - 1 bit, MLC - 2 bit, TLC - 3 bit, QLC - 4 bit.

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 3. Flash Memory 1.1 1.2 1.3. 1.4. Working principle

• The hot electron effect occurring when a high voltage is applied across the source and drain of
a device, the electric field is high, and the electrons are accelerated in the channel.
• The fastest electrons may damage the oxide and the interface near the drain, thus inducing
transistor threshold shift and mobility change over the life of the part.

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 Primary Storage

III
Register
Logic
BUS DRAM
Units Cache -  
SRAM
ROM
CPU

Second Storage Offline Storage

Inside
Removable, Outside
DVD, CD,
Floppy
Disk.
HDD SSD
TYPE OF USB

STORAGE Teriary Storage

Cloud LAN

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 1. Primary Storage 1.1. Register

• In Computer Architecture, the Registers are very fast computer memory which are used to
execute programs and operations efficiently.

Arithmeti
c logic
Hold unit
Address Hold Data

Program
Counter

Currently
been
executed

Hold
Temporary
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Data
 1. Primary Storage 1.1. 1.2. Cache
• Stores data so that future requests for that data can be served faster.
• The data stored in a cache might be the result of an earlier computation or a copy of data
stored elsewhere.
• A cache hit occurs when the requested data can be found in a cache

Disk

DRAM

Cache in CPU
• Sometimes in cascaded levels. L3 cache
• Modern high-end embedded,
desktop L2 cache
• Server microprocessors may
have as many as 6 types of
L1 cache
cache (between levels and L1
functions) L1 Data
Instruction
Cache Cache
Capacity CPU
Latency
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 1. Primary Storage 1.1. 1.2. Cache

Have 3 cascades level

CPU Cache on Intel Core i5 8300H with 4 core 8 threads

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 1. Primary Storage 1.1 1.2 1.3. DRAM
• DRAM (Dynamic Random Access Memory)
• When opening a software, the data will be transferred from the hard drive to DRAM and
transferred to the cache (SRAM), continue to the CPU for processing, and then saved
back to the hard drive because RAM is very faster. a lot of times compared to the hard
drive.

SDRAM: Synchronous dynamic random access

memory

Any dynamic random-access memory (DRAM) where the operation of its external pin
interface is coordinated by an externally supplied clock signal.

Module DIMM (Dual Inline Memory Mudule), called RAM stick

Commoms type of DIMM

• 184-pin DIMM, used for DDR SDRAM
• 200-pin SO-DIMM, used for DDR2/3/4
SDRAM
• Another 164, 240, 288 pin. Socket
DIMM
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 1. Primary Storage 1.1 1.2 1.3. DRAM

Double Data Rate Technology (DDR)

• Sends double data per clock cycle
• Clock cycle: A clock cycle is a single period of an oscillating clock signal.

• QDR: Quad Data Rate based on DDR,

operate with 2 channel (dual channel) DDR.
• Example: 2x8GB instead of 1x16 Gb DDR4
bus 2666 MHz
clock cycle

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 1. Primary Storage 1.1 1.2 1.3. DRAM

Applications

• Module SO-DIMM
• Bus Speed 2666MHz
~ 22Gb/s
• SDRAM DDR4
• 2 Slots DDR4
• Dual Channel DDR4
 QDR
• RAM Cache 1,4Gb

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 1. Primary Storage 1.1 1.2 1.3. DRAM

Other Technology of RAM

ECC DDR
• Have extra data bits which can be used by the system memory controller to detect and
correct errors.
• Uses in workstation, sever,…

MRAM
• Magnetoresistive Random Access Memory
• Read latency can be as fast as anything in the CPU, with write latency of one nanosecond (1
billionth of a second).

ReRAM
• Resistive random-access memory
• ReRAM with 7 bits per cell has been shown to be achievable.
• ReRAM has achieved nanosecond read and write speeds, has a lot of potential for disks, and
DRAM technology.

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 1. Primary Storage 1.1 1.2 1.3. 1.4. ROM
• Read Only Memory, Non-volatile memory used in computers or control systems.
• The system data can only be read out but not written.
• The following generations of ROMs are built with the ability to erase and load multiple times.
Common Type of ROM
• PROM (Programmable Read-Only Memory) or Mask ROM, can only be programmed once, and is
the cheapest.
• EPROM (Erasable Programmable Read-Only Memory), the erasing process is through
ultraviolet light source.
• EAROM (Electrically Alterable Read-Only Memory): The writing process is quite slow and uses
non-standard voltages.
• EEPROM (Electrically Erasable Programmable Read-Only Memory):
o Created with semiconductor technology.
o The contents of this ROM can be written in and deleted (electrically).
o Erase using field electron emission (commonly known as "Fowler - Nordheim tunnel").

ROM is the first generation of flash memory with the SLC monolayer NOR type

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 1. Primary Storage 1.1 1.2 1.3. 1.4. ROM

Applications

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 2. Second Storage

• Important component in the computer, all of the user's data such as the Windows operating
system or personal data is stored on the hard drive and is always accessed regularly.
• Important issues when using the computer such as the speed at which the computer boots up,
the speed at which it is copied and exported, and the safety of personal data stored on the
computer.
• Common type of drive
o HDD: Hard disk drive
o SSD: Solid state drive
o SSHD: Solid state hard driver

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 2. Second Storage 2.1. Hard Disk Drive
• Data is stored on the surface of platters made of aluminum, glass or ceramic coated with a
magnetic material.
• Components:
o Platters
o Motor ~ Spindle Controller
o Actuator
Actuator
o Slider and Read/Write Head and Slider
o Controller IC and Hot interface
Platters
o Slider is located about 5nm from
the surface of platters
o A thermal expansion stabilizer in Number
the slider read/write. of
platters Spindle

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 2. Second Storage 2.1. Hard Disk Drive
Common Types of HDD
• Size: 146 x 101.6 (mm)
(length x wide)
• Height: 19, 25.4 or 26.1
mm
• 1750Gb each platter
• Maximun 8 platters, 14Tb
Read and Write speed average
of SATA 3 correspond
• Voltage: 5V – 0.7A or 12V
28 0.55A
• Size: 100 x 69.85 (mm)
(length x wide)
• Height: 5, 7, 9.5 or 12.5
mm
• 1750Gb each platter
• Maximun 5 platters, 5Tb
correspond
• Voltage: 5V – 0.7A or 12V
0.55A
 2. Second Storage 2.1. 2.2. Solid State Drive
• Improved speed, temperature, data safety, and power
consumption. 1
• A hard drive is made up of many non-volatile memory chips
• SSD write and store data in flash chips, so data retrieval is
4 3 2
almost instantaneous.
• The current SSD's structure to meet the needs of large
capacity, small size, long life and low cost.
• The popular SSD technology today is 3D NAND technology
with a multi-layer structure (MLC).
Components
1. Hot Interface
2. RAM
3. Controller
4. 3D NAND MLC chip
memory

29 3D NAND MLC
 2. Second Storage 2.1. 2.2. Solid State Drive
Types of SSD

Physical
communication

NVMe

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 2. Second Storage 2.1. 2.2. Solid State Drive
Types of SSD
Specs
sequentially :
R/W: 545 Mb/s

Specs
sequentially :
Protocol
R: 3500 Mb/s
communication
W: 2300 Mb/s

Specs sequentially :
R: 6800 Mb/s
W: 6000 Mb/s
Space Random 430.000 IOPs

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 2. Second Storage 2.1. 2.2. 2.3. SHHD
Hybrid hard drive between an HDD and an SSD by integrating a small portion of NAND flash
memory onto a hard drive with a capacity of about 8GB

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 IV
EXTERNAL
STORAGE
DEVICES

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 IV. EXTERNAL STORAGE DEVICES

In computing, external storage comprises devices that store information outside a

computer. Such devices may be permanently attached to the computer, may be
removable or may use removable media.

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 IV. EXTERNAL STORAGE DEVICES
To write data, current is sent through a coil in the head as
the media rotates. The head's magnetic field aligns the
1. FLOPPY DISK magnetization of the particles directly below the head on
the media. When the current is reversed the magnetization
aligns in the opposite direction, encoding one bit of data.
To read data, the magnetization of the particles in the
media induce a tiny voltage in the head coil as they pass
under it.

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 IV. EXTERNAL
1. FLOPPY DISK
STORAGE
2. COMPACT DISC
(CD-DVD-BD)
 Capacity: 25 GB (single-
layer)50 GB (dual-
layer)100/200/300 GB
 Capacity: CD ~
(BDXL) up to six layers are
700MB; DVD ~ 4.7
possible in a standard form
GB (single side one
BD.
layer), ~ 8.54 GB
 Reading mechanism: use
(single side double
195-405 nm diode laser, 36
layer)
Mb/s
 Reading/recording
 Recording mechanism: use
mechanism: use 650
405 nm diode laser with a
nm diode laser
focused beam using more
power than for reading

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 1.
IV. EXTERNAL STORAGE 2. COMPACT DISC
FD
A memory card or memory cartridge is an
3.1. FLASH MEMORY electronic data storage device used for storing
digital information, typically using flash
(Memory card – SD)
memory.

Classification of memory card-SD:
CompactFlash Type I/II (CF), Microdrive,
Secure Digital (SD / SDXC), miniSD, Micro
SD (TF), MultiMediaCard (MMC), RS-MMC,
Micro MMC, Memory Stick MS, Memory Stick
PRO, Memory Stick Duo , Memory Stick PRO
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Duo, xD card
Capacity
 SDSC : 1 MB to 2 GB
 SDHC : 2 GB to 32 GB
 SDXC : 32 GB to 2 TB
 SDUC : 2 TB to 128 TB
Reading mechanism
 Standard : ≤ 12.5 MB/s
 High-speed : ≤ 25 MB/s
 UHS-I : ≤ 104 MB/s
 UHS-II : ≤ 312 MB/s
 UHS-III : ≤ 624 MB/s
 Express : ≤ 985 MB/s
 1.
IV. EXTERNAL STORAGE 2. COMPACT DISC
FD
A USB flash drive is a data
3.2. FLASH MEMORY storage device that includes
(USB Flash) flash memory with an
integrated USB interface

Universal Serial Bus (USB) is an industry standard that

establishes specifications for cables and connectors
and protocols for connection, communication and power
supply - interfacing between
computers, peripherals and other computers. 

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 1.
IV. EXTERNAL STORAGE 2. CD 3. FLASH MEMORY
FD
Cloud storage is a cloud computing model in which data
4. CLOUD STORAGE is stored on remote servers accessed from the internet, or
"cloud." It is maintained, operated and managed by a
& RAID cloud storage service provider on a storage servers that
are built on virtualization techniques.

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 IV. EXTERNAL 1.
2. CD 3. FLASH MEMORY
STORAGE FD
RAID ("Redundant Array of Inexpensive Disks" or
4. CLOUD STORAGE "Redundant Array of Independent Disks") is a data
& RAID storage virtualization technology that combines
multiple physical disk drive components into one
or more logical units for the purposes of data
redundancy, performance improvement, or both.

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