ELECTRONIC CIRCUIT DESIGN 1

402058

Bipolar Junction
Transistors (BJT)
 ACKNOWLEDGEMENT

This slide is adopted from lecture slides of

Microelectronic Circuits Text by Sedra and Smith,
Oxford Publishing.

Oxford University Publishing

Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)

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 INTRODUCTION

 IN THIS CHAPTER YOU WILL LEARN

 The physical structure of the bipolar transistor and how it
works.
 How the voltage between two terminals of the transistor
controls the current that flows through the third terminal,
and the equations that describe these current-voltage
relationships.
 How to analyze and design circuits that contain bipolar
transistors.

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 INTRODUCTION

 IN THIS CHAPTER YOU WILL LEARN

 How the transistor can be used to make an amplifier.
 How to obtain linear amplification from the fundamentally
nonlinear BJT.
 The three basic ways for connecting a BJT to be able to
construct amplifiers with different properties.
 Practical circuits for bipolar-transistor amplifiers that can
be constructed by using discrete components.

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 INTRO TO BJT

 BJT was invented in 1948 at Bell Telephone

Laboratories.
 Ushered in a new era of solid-state circuits.
 It was replaced by MOSFET as predominant
transistor used in modern electronics.

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 1. DEVICE STRUCTURE AND
PHYSICAL OPERATION
 Consists of three semiconductor regions:
 Emitter region
 Base region
 Collector region

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 1.1. SIMPLIFIED STRUCTURE AND
MODES OF OPERATION

 Transistor consists of two pn-junctions:

 emitter-base junction (EBJ)
 collector-base junction (CBJ)

 Operating mode depends on biasing.

 active mode – used for amplification
 cutoff and saturation modes – used for switching.

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 1.2. OPERATION OF THE NPN-
TRANSISTOR IN THE ACTIVE MODE

 Active mode is
“most important.”
 Two external
voltage sources are
required for biasing
to achieve it.

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 CURRENT FLOW

 Current flow
 The Collector current
 The Base current
 The Emitter current

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 THE COLLECTOR CURRENT

 Magnitude of iC is (eq6.3) iC  IS evBE / VT

independent of vCB. 
 Saturation current (IS) AE qDn np0
saturation current: IS 
W
 Typically between 10-12

and 10-18A
AE qDn ni2
 Also referred to as (eq6.4) IS 
W NA
scale current.         
ni  intrinsic carrier density
NA doping concentration of base

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 THE BASE CURRENT

 Base current (iB) –

composed of two   transistor parameter
     
components: iC
 ib1 – due to holes injected (eq6.5) iB 

from base region into
emitter. 
 ib2 – due to holes that have IS vBE / VT
(eq6.6) iB  e
to be supplied by external 
circuit to replace those
recombined.
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 THE EMITTER CURRENT

thisexpression
  is generated
  through
  combination
   of(6.5) and (6.7)

 1  1
 All current which (eq6.8/6.9) iE 

iC   IS evBE / VT 
    
enters transistor iC

must leave. 

(eq6.10) iC   iE
 iE = iC + iB

this parameter is reffered to
as common-base current gain
       
 
(eq6.11)   , (eq6.13)  
 1 1 

IS vBE / VT
(eq6.12) i  e

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 LARGE SIGNAL EQUIVALENT-
CIRCUIT MODELS

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 EXAMPLE 6.1.

 Refer to textbook for Example 6.1. pg 313 – 314

Sedra/Smith, Microelectronic Circuits, 7e.

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 1.3. THE PNP TRANSISTOR

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 2. CURRENT-VOLTAGE
CHARACTERISTICS

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 2.1. CIRCUIT SYMBOLS AND
CONVENTIONS

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 CURRENT VOLTAGE RELATIONSHIP
IN ACTIVE MODE

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 CURRENT VOLTAGE RELATIONSHIP
IN ACTIVE MODE

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 EXAMPLE 6.2

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 2.2. DEPENDENCE OF iC ON THE
COLLECTOR VOLTAGE

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 3. BJT CIRCUITS AT DC
Simplified models for the operation
npn pnp

Active
mode

Sat.
mode

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 EXAMPLE 6.4.

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 4. TRANSISTOR BREAKDOWN

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 4. TRANSISTOR BREAKDOWN

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 TEMPERATURE EFFECT

Typical dependence of β
on IC and on
temperature in an
integrated-circuit npn
silicon transistor
intended for operation
around 1 mA.

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 HOMEWORK

Sedra/Smith, Microelectronic Circuits, 7e.

Chapter 6 problems:
6.7, 6.8, 6.13
6.28, 6.29, 6.32, 6.34, 6.51, 6.53, 6.54, 6.56, 6.61
Optional problems: 6.66, 6.69

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 5. APPLYING THE BJT IN AMPLIFIER
DESIGN

 An amplifier may be designed by transistor and

series resistance.

 Appropriate biasing is important to ensure linear

gain, and appropriate input voltage swing.
 Small-signal model is employed to model the amp’s
operation.

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 5.1 DC BIAS POINT

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 5.2 COLLECTOR CURRENT &
TRANSCONDUCTANCE

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 TRANSCONDUCTANCE

 The transconductance

IC
gm 
VT

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 Electrical Engineering, “BJT: What exactly is a loadline?”, Web. 15 May 2014, 10 Jan 2015.
<http://electronics.stackexchange.com/questions/110404/bjt-what-exactly-is-a-load-line>
13/3/2016 402058 – Chap 3: Bipolar Junction Transistor (BJT) 32
 Electrical Engineering, “BJT: What exactly is
a loadline?”, Web. 15 May 2014, 10 Jan
2015.
<http://electronics.stackexchange.com/ques
tions/110404/bjt-what-exactly-is-a-load-
line>
13/3/2016 402058 – Chap 3: Bipolar Junction Transistor (BJT) 33
 6. MODELS FOR SMALL SIGNAL
OPERATION OF BJT

 The Hybrid-π model

Voltage-controlled current source Current-controlled current source

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 6. MODELS FOR SMALL SIGNAL
OPERATION OF BJT
 The T model

Voltage-controlled current source Current-controlled current source

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 7. CHARACTERIZING AMPLIFIERS

vin Rin
Rin  vin  vsig
iin Rin  Rsig

vx RL
Ro  vi  0 vo  Avo vi
ix RL  Ro

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 7. CHARACTERIZING AMPLIFIERS

vo
Open circuit voltage gain: Avo  RL
vi
vo RL
Voltage gain of the amplifier: Av   Avo
vi RL  Ro
vo Rin RL
Overall voltage gain: Gv   Avo
vsig Rin  Rsig RL  Ro
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 8. THREE-BASIC CONFIGURATIONS

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 8.1. COMMON-EMITTER AMPLIFIER

signal course (vsig)

source resistance (Rsig)
input resistance (Rin)
gain (Avo)
output resistance (Ro)
transconductance (Gv)

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 8.2. THE COMMON-BASE (CB)
AMPLIFIER

(a) CB amplifier with bias details omitted;

(b) Amplifier equivalent circuit with the BJT represented by its T Model.
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 8.3. THE COMMON-COLLECTOR
(CC) AMPLIFIER

(a) CB amplifier with

bias details omitted;
(b) Amplifier
equivalent circuit with
the BJT represented
by its T Model.
(c) Simplified circuit

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 EXAMPLE 7.5

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 SUMMARY

IN THIS CHAPTER, YOU HAVE LEARNED:

 the physical structure of the bipolar transistor and how it
works.
 how to analyze and design circuits that contain bipolar
transistors.
 how the transistor can be used to make an amplifier.
 the three basic ways for connecting a BJT.
 Practical circuits for bipolar-transistor amplifiers

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 HOMEWORK

Sedra/Smith, Microelectronic Circuits, 7e.

Chapter 7 problems:
7.15, 7.16, 7.21
7.48, 7.50, 7.52, 7.53, 7.58
Prepare Chapter 6 & 7: sections related to FET

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