ADVANTAGES AND

DISADVANTAGES OF
FINFETS
ADVANTAGES
 1. REDUCED SHORT CHANNEL EFFECT

• Due to the parasitic electric felds from the Source and Drain which
affect the drain current
• MOSFET: expect the gate has ultimate control over the channel by
controlling the drain current
• Short channel devices: the gate not in control
• The gate is present all around the channel like a fin giving control over
the channel
• In double gate, the electric firlds from
Source and drain which travel through the
are ended in the second gate( the dark grey
rectangle where the arrow marks from
source and drain end),therefore the channel
is completely free of the electric fields
from source and drain, therefore giving the
gate full authority over the channel which
is desired.
 2. FINFET DEVICES CAN BE USED TO IMPROVE
THE PERFORMANCE, REDUCE THE LEAKAGE
CURRENT AND POWER DISSIPATION
• With the shrinking of the fabrication proc3ss, the changes of gate and gate oxide technology
wasn’t enough to efficiently control the current leakage
• Planar structure : gate enclose with one surface of a channel
• FinFET : Gate enclose with three surfaces of a channel that wrap around the block and control
the leakage.
 3. HIGH SPEED AND BETTER
PERFORMANCE
• Planar: electrons move from source to draint through only one surface under the gate
• Finfets: 3 surfaces for electrons to move. Thus more amount of electrons can move to deliver
better performance in FinFETS
• Shorter gate length = shorter distance required for electrons to move,
 LONGER BATTERY LIFE

• Because of the controllability of current in FinfFETS, less power needed to switvh ‘OFF’ to
‘ON’
DISADVANTAGES
 1. HIGH COST

• Costier than planar device but it can range from few prevent up to 45%
• Hard to produce as the cost of advanced litograpgy is high
 2. CORNER EFFECT

• The corner effect is known as a leakage current enhancement at the edges of the active
areas in the shallow trench isolated CMOS transistors.
• the corner effect for FinFET transistors with the minimum feature size of 50 nm is
investigated by coupled three-dimensional process and device simulation
• the corner effect in small size FinFETs for typical device parameters does not lead to an
additional leakage current and therefore does not deteriorate the FinFET transistor
performance
 AVOID CORNER EFFECT

• Get rid of corner

 PROCESS CHALLENGES IN FINFETS

1. FinFETS too thick = electrostatic influence of the gate on the side and top of the fin will be
weaker and the fin body will behave like planar device and lose the benefits of using FinFETS.
2. FinFETS too thin = density of available electron or hole, reduced