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Chapter 1:

Diodes and applications


Nguyen Dang Phu, PhD
Faculty of Electronics and Telecommunications,
VNU-University of Engineering and Technology
Email: phund@vnu.edu.vn
0989666779

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Outline
1. Introduction
2. The ideal diode
3. The real diode
4. Applications
5. Other diode

Textbook: Adel. S. Sedra, Kenneth C. Smith. Microelectronic Circuits. Oxford University


Press. 2011 (Chapter 4).
References: Thomas L. Floyd, Electronic devices, 9th edition, Prentice Hall (Section 2).

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1. Introduction
• Diode is a semiconductor device which conduct
the current in one directly only.
• Two terminals: Anode (A+) and Cathode (K-).
• When the positive polarity is at the anode, the
diode is forward biased and is conducting.
• When the positive polarity is at the cathode, the
diode is reversed biased and is not conducting.
• If the reverse-biasing voltage is sufficiently large,
the diode is in reverse-breakdown region and
large current flows though it.
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2. The Ideal Diode
2.1 Current-Voltage characteristic
• The ideal diode may be considered the most
fundamental nonlinear circuit element

(b) i-v characteristic

(a) Diode circuit symbol

(c) Equivalent circuit in the (d) Equivalent circuit in the


reserve direction forward direction
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2. The Ideal Diode
2.2 Some applications – The rectifier

(a) Rectifier circuit (b) Input waveform

(c) Equivalent circuit, (d) Equivalent circuit, (e) Output waveform

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Exercise 1
Exe4.1-4.3 (P169): For the circuit as follows:

4.1 Sketch the transfer characteristic versus


4.2 Sketch the waveform of
4.3 Find the peak value of and the DC component if has a peak value of 10V and R=1k

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Exercise 1 (Solution)

4.1 The transfer characteristic versus 4.2 The waveform of


4.3 Find the peak value of and the DC component
We have: . max when diode is conducting =>
DC component :

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2. The Ideal Diode
2.2 Some applications – Diode Logic Gates

The output will be high if one or The output will be high if all of
more of the inputs are high the inputs are high
Y= A + B + C OR gate Y = A . B . C AND gate
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Exercise 2

• Exa 4.2 (P171): Assuming


the diodes to be ideal, find
the values of I and V.

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Exercise 3
• Exe 4.4 (P173): Find the values of I and V in
the circuits shown in Fig 1.4.

Figure 1.4

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Exercise 4
• Exe 4.5 (P174): Figure 1.5 shows a circuit for an AC voltmeter. It utilizes a
moving-coil meter that gives a full-scale reading when the average current
flowing through it is 1mA. The meter has a 50 resistance. Find the value of R that
results in the meter indicating a full-scale reading when the input sine-wave
voltage is 20 V peak-to-peak. (Hint: The average value of half-sine waves is Vp /π.)

Figure 1.5

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3. The Real Diode
3.1 The I-V characteristic
• The characteristic curve consists of three
distinct regions:
The forward-bias region, by
The reverse-bias region, by
Knee voltage
The breakdown region, by

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3. The Real Diode
3.1 The I-V characteristic
• The Forward-Bias Region:

 is constant ( for a given diode at a given temperature


(Saturation current).
: thermal voltage ,Note
at room temperature ()

or Where 2.3

 Voltage drop: 0.7V

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Exercise 5
• Exa 4.3 (P176): A silicon diode said to be a 1mA device displays a forward
voltage of 0.7 V at a current of 1 mA. Evaluate the junction scaling constant .
What scaling constants would apply for a 1A diode of the same manufacture that
conducts 1 A at 0.7 V?

• Solution:
 We have: =>
 Diode 1mA: Is=10-3 x e-700/25=10-3 x e-28 A=6.9x 10-16 A
 Diode 1A: Is=1 x e-700/25= e-28 A=6.9x 10-13 A

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Exercise 6-7
• Exe 4.6 (P177): Find the change in diode voltage if the current changes from 0.1
mA to 10 mA.
• Solution: we have V2-V1=2.3 x VT x log(I2/I1)=60 x log (10/0.1)= 120mV
• Exe 4.7 (P177): A silicon junction diode has v = 0.7 V at i = 1 mA. Find the
voltage drop at i = 0.1 mA and i = 10 mA.

• Solution: we have V2-V1=2.3 x VT x log(I2/I1)


o i=0.1mA: V2-700=60xlog(0.1/1) =>V2-700=-60 =>V2=640mV=0.64V.
o i=10mA: V2-700=60xlog(10/1) => V2=700+60=760mV=0.76V.

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3. The Real Diode
3.1 The I-V characteristic
• The Reverse-bias Region: If is
negative and a few time larger than
(~25mV) in magnitude, the diode
current becomes
Knee voltage
• The Breakdown Region:
The reverse current increase rapidly
with the associated increase in
voltage drop very small

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3. The Real Diode
3.2 Modeling the Diode Forward Characteristics
• The exponential model: The diode operation in the forward region is
provided by the exponential model.
𝑉𝐷 / 𝑉𝑇
𝐼 𝐷 =𝐼 𝑆 𝑒
𝑉 𝐷𝐷 −𝑉 𝐷
𝐼 𝐷= (Kirchhoff loop)
𝑅
Two ways for obtaining the solution:
 Graphical Analysis using the exponential model
 Iterative analysis using the exponential model

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3. The Real Diode
3.2 Modeling the Diode Forward Characteristics
• Graphical analysis using the exponential model

𝑉𝐷/𝑉𝑇
𝐼 𝐷 =𝐼 𝑆 𝑒
𝑉 𝐷𝐷 −𝑉 𝐷
𝐼𝐷=
𝑅

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3. The Real Diode
3.2 Modeling the Diode Forward Characteristics
• Iterative analysis using the exponential model
𝑉𝐷 / 𝑉𝑇
𝐼 𝐷 =𝐼 𝑆 𝑒
𝑉 𝐷𝐷 −𝑉 𝐷
𝐼𝐷=
𝑅
Using a simple iterative procedure

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Exercise 8
• Exa4.4 (P180): Determine the current and the diode voltage for the circuit in
beside figure with = 5 V and R = 1k. Assume that the diode has a current of 1
mA at a voltage of 0.7 V.

• Solution:
 We then use the diode equation to obtain a better estimate for using equation .
o , = 1 mA, and = 4.3 mA results in = 0.738 V.
=> Thus the results of the first iteration are = 4.3 mA and = 0.738 V.
 The second iteration proceeds in a similar manner: ;

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3. The Real Diode
3.2 Modeling the Diode Forward Characteristics
• The Constant Voltage Drop Model
It is the simplest and most widely used
diode model.
When forward biased, the diode has a
voltage drop that varies in a narrow
range, 0.6V to 0.8V
This model assumes

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Exercise 9
Exe 4.10 (P183): For the circuit in beside figure, find and for the case = 5 V and R = 10k.
Assume that the diode has a voltage of 0.7 V at 1-mA current. Use (a) iteration and (b) the
constant-voltage-drop model with = 0.7 V.

• Solution for iteration:


 Iteration 1: VD=0.7V, . • Solution for CVD model

 Iteration 2: VD=0.678V, . => ID=0.43 mA,


VD=0.7V
=>
Summary: ID=0.43mA, VD=0.678V

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3. The Real Diode
3.2 Modeling the Diode Forward Characteristics
• The small signal model

If satisfies ,

or with

The dynamic resistance


→ This is the small signal model of the diode, which applies for
signal that has amplitude smaller than 5mV
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Exercise 10
• Exe4.13(P189): Find the value of the diode small-signal resistance at bias currents
of 0.1 mA, 1 mA, and 10 mA.
• Solution: The dynamic resistance

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Exercise 11
• Exa4.5 (P186): Consider the circuit shown in the below figure for the case in which R = 10k. The
power supply V+ has a DC value of 10 V on which is superimposed a 60Hz sinusoid of 1V peak
amplitude. (This “signal” component of the power-supply voltage is an imperfection in the power-
supply design. It is known as the power-supply ripple. More on this later.) Calculate both the dc
voltage of the diode and the amplitude of the sine-wave signal appearing across it. Assume the
diode to have a 0.7-V drop at 1-mA current.

a) Circuit for the Example


b) Circuit for calculating the dc operating point
c) Small signal equivalent circuit

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Exercise 11 (solution)
• Considering dc quantities only, we assume 0.7 V and calculate
the diode dc current:
• Since this value is very close to 1 mA, the diode voltage will be
very close to the assumed value of 0.7 V. At this operating
point, the diode incremental resistance is:

• The signal voltage across the diode can be found from the
small-signal equivalent circuit in Fig.(c). Here denotes the 60-
Hz 1-V peak sinusoidal component of V +, and is the
corresponding signal across the diode. Using the voltage-
divider rule provides the peak amplitude of as follows:

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3. The Real Diode
3.3 Zener diode Operation in the Reverse Region
• In breakdown region, a reverse bias () beyond the knee
voltage () leads to a large reverse current ()
(knee current)
• called the dynamic resistance, is the inverse of the
slope of the almost-linear I-V curve at the Q-point.
Typically, it is in range of a few ohms to a few ten ohms.
• and on Zener:
• denotes the point at which the straight line of slope
intersects the voltage axis.
• Voltage :

(maximum current)

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Exercise 12
• Exa4.7 (P192): The 6.8-V zener diode in the circuit of Fig.
4.19(a) is specified to have at , , and . The supply voltage is
nominally 10 V but can vary by .
a) Find with no load and with at its nominal value.
b) Find the change in resulting from the charge in . Note that , usually
expressed in mV/V, is known as line regulation.
c) Find the change in resulting from connecting a load resistance that
draws a current 1mA, and hence find the load regulation () in
mV/mA.
d) Find the change in when =2k.
e) Find the value of when =0.5k. Figure 4.19. (a) Circuit for example; (2) The
circuit with the Zener diode replaced with
f) What is the minimum value of for which the diode still operates in its equivalent circuit model.
the breakdown region?

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Exercise 12 (Solution)
• ; 6.8V, = 5 mA, and = 20 =>
a) Find with no load and with at its nominal value.

b) Find the change in resulting from the charge in (= ). Note that , usually expressed in mV/V, is known as
line regulation.
So line regulation: 38.5mV/V
c) Find the change in resulting from connecting a load resistance that draws a current 1mA, and hence find
the load regulation () in mV/mA.
Because = 1 mA, the zener current will decrease by 1 mA.

The load regulation is: .

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Exercise 12 (Solution)
d) Find the change in when =2k.

e) Find the value of when =0.5k.


->. This is not possible because I=6.35mA (for ). So the Zener must be cut off.
If this is indeed the case, then is determined by the voltage divider formed by and R (Fig. a): .
Since this voltage is lower than the breakdown voltage of the zener, the diode is indeed no longer operating in
the breakdown region.
f) What is the minimum value of for which the diode still operates in the breakdown region?
For the zener to be at the edge of the breakdown region, and .
At this point the lowest (worst-case) current supplied through R is I=(9-6.7)/0.5=4.6mA and thus the load current is 4.6
- 0.2 = 4.4 mA. The corresponding value of is

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4. Some application circuits using diodes
4.1 Rectifier circuits

• Half-Wave Rectifier Block diagram of a DC power supply

• Full-Wave Rectifier
• Bridge Rectifier

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4. Some application circuits using diodes
4.1 Rectifier circuits
• Half-Wave Rectifier

PIV (Peak Inverse Voltage)=


the diode must be able to withstand without breakdown

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Exercise 13
• Exe 4.19 (P197): For the half-wave rectifier circuit in beside figure, show the
following: (a) For the half-cycles during which the diode conducts, conduction
begins at an angle and terminates at (), for a total conduction angle of (). (b) The
average value (dc component) of is , (c) The peak diode current is . Find
numerical values for these quantities for the case of 12-V (rms) sinusoidal input,
0.7 V, and R = 100. Also, give the value for PIV.

• Solution: rms (Root mean square) of sinusoidal input is 12V =>


 The conduction angle()
= => The conduction angle: =
 The average value (DC component) of :
 The peak current: 0.1267A;

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4. Some application circuits using diodes
4.1 Rectifier circuits
• Half-Wave Rectifier Ideal Diode

Real Diode?

Filter capacitor

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4. Some application circuits using diodes
4.1 Rectifier circuits
• Half-Wave Rectifier

Ideal diode

is peak-to-peak ripple voltage


, where

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4. Some application circuits using diodes
4.1 Rectifier circuits
• Full-wave Rectifier

PIV (Peak Inverse Voltage)=


the diode must be able to withstand without breakdown

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Exercise 14
• Exe.4.20 (P198): For the full-wave rectifier circuit as the
beside figure, show the following: (a) The output is zero for
an angle of 2 centered around the zero-crossing points of
the sin-wave input. (b) The average value (dc component) of
is . (c)The peak current through each diode is .
Find the fraction (percentage) of each cycle during which , the
value of , the peak diode current, and the value of PIV, all for
the case in which is a 12-V (rms) sinusoid, , and R = 100 Ω

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Exercise 14 (solution)
rms (Root mean square) of sinusoidal input is 12V =>
a) The for an angle =
b) The average value (dc component) of is 10.1V
c) The peak current through each diode is =(-0.7)/100=163mA
The fraction (percentage) of each cycle during which :
The value of = -0.7=16.27
PIV=2Vs- =-0.7=32.2V

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4. Some application circuits using diodes
4.1 Rectifier circuits
• The Bridge Rectifier

PIV (Peak Inverse Voltage)=


the diode must be able to withstand without breakdown

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Exercise 15
• Exe 4.21 (P200): For the bridge rectifier circuit as the beside figure, use
the constant-voltage-drop diode model to show that (a) the average (or
dc component) of the output voltage is (b) the peak diode current is .
Find numerical values for the quantities in (a) and (b) and the PIV for
the case in which is a 12-V (rms) sinusoid, , and R = 100 Ω.

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Exercise 15 (solution)
• rms (Root mean square) of sinusoidal input is 12V =>
a) The average (or dc component) of the output voltage is =>
b) The peak diode current is

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4. Some application circuits using diodes
4.2 Limiting Circuits
• Limiter circuits
𝐿−
𝐾
𝐿
≤ 𝑣 𝐼 ≤ +¿ ¿
𝐾
𝑣 𝑜= 𝐾 𝑣 𝐼
 If , is limited to
 If , is limited to
Transfer characteristic
for a double limiter
circuit

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4. Some application circuits using diodes
4.2 Limiting Circuits
• Limiter circuits

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Exercise 16
• Exe 4.26 (P210): Assuming the diodes to be ideal,
describe the transfer characteristic of the circuit shown
in the beside figure. 𝐷1 𝐷2
• Solution:

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4. Some application circuits using diodes
4.3 Clamping Circuits
• Clamping Circuits
Clamped capacitor

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4. Some application circuits using diodes
4.3 Clamping Circuits
• Clamping Circuits

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5. Some other types of diodes
5.1 Photo diode
Photo Diode

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5. Some other types of diodes
5.2 Light-emitting Diode (LED)

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Exercises:
• Section 4.1 (P216): The ideal diode, from exe. 4.1 to exe. 4.16.
• Section 4.2 (P219): The terminal characteristics of junction diodes, from exe.
4.17 to 4.31.
• Section 4.3 (P221): Modeling the diode forward characteristic, from exe. 4.32 to
4.56.
• Section 4.4 (P224): Operationg in the Reverse breakdown region – Zener diodes,
from exe. 4.57 to exe. 4.64.
• Section 4.5: rectifier circuits, from exe 4.65 to exe. 4.84.
• Section 4.6. limiting and clamping circuits, from exe. 4.85 to exe. 4.95.

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Superdiode

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