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ISBN: 978-0-19-976570-6
Printing number: 9 8 7 6 S 4 3 2 I
Contents
Exercise Solutions (Chapters 1 - 16)
J , qD dn(x)
Ex: 1.27 n • lit
At 300 K, n1 = 1.5 X IOH1/cm 3 = 1.6 X 10~ 19 X 35 X 108 X 105
Pp = N" "" 56 X 10- 6 AI( 11-m )2
Want electron concentration
w = 56 11 A/( 11-m) 2
I
= TIP "" .5 X lO "' 1.5 X 104 /cm) For 1. = I mA ""1. X A
106
.2 =-> .4 = I nv\ -· . !OJ IJ:A ::::.18 lltn~
;. N A = Pp = !!!.. Jn 56 )J.AI(t.l.tn) 2
TIP
Gv ,. . TJv
l','\"i,\!
Ex: 5.28
1}(J 0.91 v.
,..,_ ....
T.l.~-·- .. , fJs (!~ ···~····'-·--···· 91 mV.
I +g..,R,
Rout·::::~. IOOH
;-;;~~ T . ,~ 0.9V
A.,,. I ~ RL
I tkn
Assuming V ~ ·-t x
:. N, = 1.5 kH
-g.,( Rn !! ~2 ···20
4
' g,.R\
I ·IV ,2
In - -k,--- \· 1)\ 0Ji25 mA
2 L
Ex: 5.29
in the I)V.:ralltmnsfcr function in eq. Ill . 2 5 Rf. '"' 3 X to '" 16.7 kfl
2- 115
= 1.86mA
-3V
-IOV
(b)
3.34
+IOV (a)
OO!I20)kfl
5kfl
('20)
ti=O 6X =!~
1
lOkll
I =
(toll4-0.7
20) + 20 "" 0.124 rnA
-IOV
v "' 20/ = 2.48 v
102 '" lO- ( -10) - 0.7 (b)
15 1.29 mA
3.33
(a)
t:utoff ·: ~<~
2 2
:.I = OA
v ""' ~2 - ~2 "' ·0 ..'; v
1 mW A . flO )
.·. / 0 "' = 151.5 11-A logl(IO '"'" -I) UJ
4 X 1.65 V N
- 21og(•...,l<>>.r)--
~I '"'·· 18 ! 1.1 "' 126.3 JLA
11.9 = 11.3 ~choose N ·~ 12
The actual vnlue of stopband altenuation qm be
<D cakulaled using the intt•ger value of N :
L--"""'--.---o
+ + A{w,) = JOiog(l + r'(·~~·)2 "]; IV= 12
_tv!'. ~
V; . Vo
o-----·-s-~l:
= 27.35 dB actual anenuation
If the stopband specs are to he met exactly we
need lo lind A_,.
16.34
Note that the output is high if no
word is selected. Thus, logically, high must corre-
spond 10 logic 0 (and no transistor, as noted in the
te~l).
Correspondingly, the words stored in are
,rl,rl,rl -
0100,0000. 1000, 1001,0101,0001.01 10, and
0010.
16,35
Needz=x+y
.......
X y z
,,.r
.....
00 00 ()()()()
()()()()
::1 ,,.r
..... .....
00 OJ
,,r
00 10 ()()()()
,,.r
.....
00 II ()()()()
:~
01 00 ()()()() ....
,,.r
01 OJ 0001
,,r
.....
,,.r ,,.r
::1
OJ 10 0010 ..... ..... ,,.r
01 II 0011
. .r
'4 .....
10 00 ()()()() 04 03 02 01
10 01 0010 Note lhat a IOta! of 14NMOS and 4PMOS are
used.
10 10 0100
+·+
10 11 OJIO
II 00 ()()()()
11 OJ 0011
11 10 OliO
16.36
11 11 1001
(a) Forthe PMOS, with V8 =2.5 V
L 0 = (90/3)10- 6(1211.2)[(5- 1)2.5- 2.5 2 /2)
T = RC = 5 x 10.1 x 2 x 10-" = JO n•
Here, vw = 5( I - ~ -•"">
Thus the rise time (I 0% to 90%) is essentially the
time 1 to 90%, where
0.9(5) = 5(1- e-'' 10 )
e·o'IO = O.J
and 1 = -10 ln(O.Il = 23 ns