Professional Documents
Culture Documents
Solution Manual:
https://testbankpack.com/p/solution-manual-for-microelectronic-circuit-
design-5th-edition-jaeger-blalock-0073529605-9780073529608/
CHAPTER 2
2.1
Based upon Table 2.1, a resistivity of 2.82 -cm < 1 m-cm, and aluminum is a conductor.
2.2
Based upon Table 2.1, a resistivity of 1015 -cm > 105 -cm, and silicon dioxide is an insulator.
2.3
2.4
L 1.8 2 cm
( a) R=r = ( 2.82x10-6 W - cm) = 144 W
A ( 5x10 cm)(1x10 -4 cm)
-4
L 1.8 2 cm
( b) R=r = ( 2.82x10-6 W - cm) = 287 W
A ( 5x10 cm)( 0.5x10 -4 cm)
-4
2.5
L 1.8 2 cm
( a) R = r = (1.66x10 -6 W - cm) = 94.5 W
A ( 5x10 cm)(1x10 -4 cm)
-4
L 1.8 2 cm
( b) R=r = (1.66x10-6 W - cm) = 169 W
A ( 5x10 cm)( 0.5x10 -4 cm)
-4
2.6
2 æ
ni2 = BT 3 exp ç - è
2-1 ©R. C. Jaeger & T. N. Blalock 3/23/15
÷ .0 10 31
B 8x kT ø
E ö 10 =1 1.12
(
10 ) = 1.08x1031GT 3 exp çæ -
-5
÷ö
è 8.62x10 T ø
Using a spreadsheet, solver, or MATLAB yields T=305.23K
Define an M-File:
function f=temp(T)
f=1e20-1.08e31*T^3*exp(-1.12/(8.62e-5*T));
Then: fzero('temp',300) | ans = 305.226 K
31
For silicon, B = 1.08 x 10 and EG = 1.12 eV:
-19 3 9 3 13 3
ni = 5.07 x10 /cm 6.73 x10 /cm 1.69 x 10 /cm .
30
2.8
(a) Define an M-File:
function f=temp(T)
ni=1E15;
f=ni^2-1.08e31*T^3*exp(-1.12/(8.62e-5*T));
15
ni = 10 /cm3 for T = 602 K
2 2
1015 + (10 )15
+ 4 (1015 )
( b) N D = 1015 cm3 , n 2 = 1015 cm3 : n = = 1.62x1015 / cm3
i
2
n2 10 30
p= i = 15
= 6.18x1014 / cm3
n 1.62x10
(c) At room temperature, N D >> ni2.
ni2 10 20
\n = N D = 1015 electrons / cm3 and p = = 15 = 10 5 holes / cm3
n 10
2.9
6 3
T = 300 K and EG = 1.42 eV: ni = 2.21 x10 /cm
3 10 3
-19
T = 100 K: ni = 6.03 x 10 /cm T = 450 K: ni = 3.82 x10 /cm
6 3
T = 300 K and EG = 1.42 eV: ni = 2.21 x10 /cm
3 10 3
-19
T = 100 K: ni = 6.03 x 10 /cm T = 450 K: ni = 3.82 x10 /cm
æ cm 2 ö æ V ö 5 cm
v p = +m p E = ç +250 ÷ç -2000 ÷ = -5.00x10
è V - s øè cm ø s
æ 1 öæ cm ö A
jn = -qnvn = ( -1.60x10
-19
) 17 6 4
C 10 ç ÷ç1.40x10 ÷ = 2.24x10
è cm3 øè s ø cm 2
æ
1 öæ 5 cm ö A
j p = qnv p = (1.60x10 -19
C ) ç10 3 ÷ç -5.00x10 ÷ = -8.00x10 -11
è cm3 øè s ø cm 2
2.11
æ 1 öæ cm ö A MA
-19
) 18 7 6
(
jn = qnvn = 1.60x10 C ç10
è
֍10
cm3 øè
÷ = 1.60x10
s ø cm 2
= 1.60 2
cm
æ
1 öæ 7 cm ö A pA
(
j p = qnv p = 1.60x10 -19 C ç10 2 ÷ç10 ) ÷ = 1.60x10 -10 = 160
è cm3 øè s ø cm 2 cm 2
6 A -4 -4
I = jn · Area = 1.60x10
cm 2
(10 )(
cm 25x10 cm = 400 mA )
2.12
2.13
j 2500 A / cm2 cm
v= = = 2.5x10 5
Q 0.01C / cm2 s
2.14
æ cm 2 ö æ V ö 6 cm
vn = -m n E = - ç1000 ÷ç -1500 ÷ = +1.50x10
è V - s øè cm ø s
æ cm 2 ö æ V ö 5 cm
v p = +m p E = + ç 400 ÷ç -1500 ÷ = -6.00x10
1 öæ cm ö A
jn = -qnvn = ( -1.60x10 -19 C ) ç10 3 ÷ç +1.50x10 6 ÷ = -2.40x10 -10
æ
è cm3 øè s ø cm 2
-19 æ 17 1 öæ 5 cm ö 3 A
j p = qnv p = (1.60x10 C ) ç10 ÷ç -6.00x10 ÷ = -9.60x10
è cm3 øè s ø cm 2
2.16
For intrinsic silicon, s = q ( m n ni + m p ni ) = qni ( m n + m p )
-1
s £ 10-5 ( W - cm ) for an insulator
-1
s 10 -5 ( W - cm ) 2.497 x1010
ni = £ =
q ( mn + m p ) æ cm 2 ö cm 3
(1.602x10-19 C ) (1800 + 700)
ç ÷
è v - sec ø
5.152 x10 20 æ E ö
n 2i = = BT 3 exp ç - G ÷ with
cm 6
è kT ø
2.17
For intrinsic silicon, s = q ( m n ni + m p ni ) = qni ( m n + m p )
-1
s ³ 1000 (W - cm) for a conductor
-1
s 1000 ( W - cm) 3.468x1019
ni = ³ =
q ( mn + m p ) cm 2 cm 3
1.602x10-19 C (120 + 60 )
v - sec
39
1.203x10 æ E ö
n 2i = = BT 3 exp ç - G ÷ with
cm 6 è kT ø
2.19
Since Ge is also from column IV, acceptors come from column III and donors come from
column V. (a) Acceptors: B, Al, Ga, In, Tl (b) Donors: N, P, As, Sb, Bi
2.20
(a) Gallium is from column 3 and silicon is from column 4. Thus silicon has an extra electron
and will act as a donor impurity.
(b) Arsenic is from column 5 and silicon is from column 4. Thus silicon is deficient in one
electron and will act as an acceptor impurity.
2.21
(a) Germanium is from column IV and indium is from column III. Thus germanium has one
extra electron and will act as a donor impurity.
(b) Germanium is from column IV and phosphorus is from column V. Thus germanium has
one less electron and will act as an acceptor impurity.
2.22
j æ A ö V
E = = j r = 5000
( 0.02W - cm) = 100 , a small electric field
ç ÷
s è cm2 ø cm
2.23
3
æ1016 atoms ö æ 10 -4 cm ö
N=
ç ÷ ( 0.180m m)( 2m m)( 0.5m m) ç ÷ = 1800 atoms
3
è cm ø è mm ø
5.28x10
ni = 7.27x104 / cm 3 N A - ND >> 2ni , so p = / cm 3 and n = 18
= 7.54x10-10 / cm 3
7x1018 7x10
2.25
(a) Since arsenic is a donor, ND = 3 x 1017/cm3. Assume NA = 0, since it is not specified. The
material is n-type.
2.26
(a) Arsenic is a donor, and boron is an acceptor. ND = 3 x 1018/cm3, and NA = 8 x 1018/cm3.
Since NA > ND, the material is p-type.
(b) At room temperature, ni = / cm3 and NA - ND = 5x1018 / cm3 >> 2n i
1010
2.27
(a) Phosphorus is a donor, and boron is an acceptor. ND = 2 x 1017/cm3, and NA = 6 x 1017/cm3.
Since NA > ND, the material is p-type.
(b) At room temperature, ni = / cm3 and NA - ND = 4x1017 / cm3 >> 2n i
1010
p 4x10 / cm
2.29
2.30
ND = 5 x 1016/cm3. Assume NA = 0, since it is not specified.
N D > N A : The material is n-type. | N D - N A = 5x1016 / cm3 >> 2n = 2x1010 / cm 3
i
2 20
n 10
n = 5x1016 / cm3 | p = i
= 3
16 = 2x10 / cm
3
n 5x10
16 3 cm 2 cm 2
N D + N A = 5x10 / cm | Using the equations in Fig. 2.8, m n = 885 and m p = 198
V -s V -s
1 1
r= = = 0.141 W - cm
qm n n æ cm öæ 5x10 ö
(1.602x10 -19
C 885)
2 16
çè ÷ç cm
V - s øè ø÷
3
2.31
NA = 2.5x1018/cm3. Assume ND = 0, since it is not specified.
18 3 10 3
N A > N D : The material is p-type. | N A - N D = 2.5x10 / cm >> 2ni = 2x10 / cm
ni2 1020
p=2.5x1018 / cm3 | n= = 18 = 40 / cm
3
p 2.5x10
18 3 cm 2 cm 2
N D + N A = 2.5x10 / cm | Using the equations from Fig. 2.8, m n = 187 and m p = 58.7
V -s V -s
1 1
r= = = 42.5 mW - cm
qm p p æ öæ ö
2-9 ©R. C. Jaeger & T. N. Blalock 3/23/15
cm 2.5x10
1.602x10 -19 C 58.7
2 18
ç ÷ç ÷
è V - s øè cm3 ø
ni2 10 20
p = 8x1019 / cm3 | n= = = 1.25 / cm 3
p 8x1019
19 3 cm 2 cm 2
N D + N A = 7x10 / cm | Using Fig. 2.8, m n = 66.2 and m p = 46.1
V -s V -s
1 1
r= = = 1.69 mW - cm
qm p p -19
æ cm öæ 8x10 ö
1.602x10 C 46.1
2 19
ç ÷ç ÷
è V - s øè cm3 ø
2.33
16 3 16 3
Phosphorus is a donor: N D = 4.5x10 / cm | Boron is an acceptor: N A = 5.5x10 / cm
1 1
r= = = 4.08 W - cm
qm n n æ cm 2 öæ1016 ö
1.602x10 -19
C ç153 ÷ç ÷
è V - s øè cm3 ø
2.34
An iterative solution is required. Using the equations from Fig. 2.8 and trial and error:
NA p p p
1018 70.8 7.08 x 1019
2 x1018 61.0 1.22 x 1020
An iterative solution is required. Using the equations in Fig. 2.8 and trial and error:
NA p p p
1016 318 3.18 x 1018
4 x 1016 214 8.55 x 1018
7.5 x 1016 170 1.28 x 1019
7.2 x 1016 173 1.25 x 1019
2.36
Yes, by adding equal amounts of donor and acceptor impurities the mobilities are reduced, but
the hole and electron concentrations remain unchanged. See Problem 2.39 for example.
However, it is physically impossible to add exactly equal amounts of the two impurities.
2.37
An iterative solution is required. Using the equations in Fig. 2.8 and trial and error:
ND n nn
1015 1360 1.36 x 1018
1.5 x 1015 1340 2.01 x 1018
1.6 x 1015 1340 2.14 x 1018
1.55 x 1015 1340 2.08 x 1018
2.38
Based upon the value of its resistivity, the material is an insulator. However, it is not intrinsic
because it contains impurities. The addition of the impurities has increased the resistivity.
Since N D - N A =0, n=p=ni, and s = q ( m n ni + m p ni ) = qni ( m n + m p )
N A + N D = 10 20 / cm3 which yields m p = 45.9 and m n = 64.3 using the
An iterative solution is required. Using the equations in Fig. 2.8 and trial and error:
ND n nn
1019 108 1.08 x 1021
7 x 1019 67.5 4.73 x 1021
1 x 1021 64.3 6.43 x 1021
9.67 x 1019 64.5 6.24 x 1021
(b)
An iterative solution is required using the equations in Fig. 2.8 and trial and error:
NA p p p
Iterative solutions are required using the equations with Fig. 2.8 aand trial and error:
NA p p p
16 3
So ND = 5.7 x 10 /cm must be added to change achieve a resistivity of 0.25 ohm-cm. The
silicon is converted to n-type material.
Thefeatures
boy who likes to play games in which the lead soldier and other
of imitation warfare have a part, can make his own lead
soldiers, and other castings, by the use of a plaster-of-Paris mold. If
he cannot undertake this work alone, the process is interesting for
his older brother, or even for “daddy.” A mold of plaster of Paris, as
shown in the illustration, is used for the casting box. The hollow
impression of the soldier is filled with the molten lead, which is
poured in through the sprue hole at the top. When the lead cools, the
mold is opened, the casting removed, and the process repeated. An
entire army can thus be made with a single mold.
First obtain a small lead soldier, and coat it with shellac. Make a
box somewhat larger than the pattern for the soldier, as shown in the
sketch. Make it about 1¹⁄₂ in. deep, and set bolts near the corners, as
shown, pouring the plaster around them. Fill the box half full of
plaster of Paris. While still soft, press the pattern into the center of
the plaster so that half its thickness is imbedded. Permit the under
mold to dry, and remove the pattern. Shellac the surface of the
plaster and the impression. Wrap a layer of oiled paper around the
bolts. Replace the pattern in the impression and fill the remaining
half of the box with plaster, and permit it to dry.
Also make a small wooden plug, and set it in the center, its point
touching the pattern, and pour the plaster around it. When the mold
is dry remove this plug, thus forming the sprue hole, through which
the molten lead is poured into the mold.
Lead Soldiers, and Many Other Small Castings, can be Made by the Use of
This Plaster-of-Paris Mold
When the second part of the mold is dry, lift it carefully from the
under mold, and remove the pattern. Shellac the surface of the top
mold, cleaning away any small bits of plaster around the edges. Trim
down the box so that the top mold projects over it about ³⁄₈ in.,
making it easy to drop the top mold into place over the bolts. To use
the mold, make certain that it is clean inside and set the top into
place. Fasten down the wing nuts at the washers. Be very careful
that the mold is dry, as hot metal poured on a wet surface may cause
a dangerous splash. Repeat this process, and if care is taken about
300 castings can be made with one mold. The soldiers can be
painted suitably and even sold in sets. The process can be adapted
to many forms of other small castings, using other suitable metals, or
wax, where the casting is to be molded into shape further.
A Trap Nest for the Poultry House
The Trap Nest Automatically Closes as the Hen Enters the Nest Box,
Releasing the Trigger
Poultry raisers find a trap nest useful, and one can be made
quickly by fitting an old packing box with a suitable sliding gate. In
the arrangement shown, the gate is raised slightly as the hen enters
the nest box, releasing the spring and causing the gate to drop. The
gate and spring can be adjusted to various-sized breeds of poultry.
The two grooved uprights can be cut from flooring and the other
wooden parts made from laths or wooden strips. The trigger is made
of wire.—A. J. Call, Hartsville, Mass.
A Simple Wireless Detector
This Neat Wireless Detector was Made of Materials Easily Gathered in the
Boy’s Workshop