ASSIGNMENT 2 (Subjective) Carrier

Transport phenomenon
1. Define:
(a) Recombination
(b) Mean life time of a carrier
(c) Drift current
(d) Diffusion & Diffusion current

2. What physical law is manifested in the continuity equation? Write the equation of
continuity for electrons and explain the physical significance of each term.

3. Show that the total hole current in a semiconductor is given by

dp
J p=e μ p pE – e D p
dx

4. Explain effect of temperature over mobility in semiconductor with the help of lattice
scattering and impurity scattering.

5. Why electron mobility is always greater than hole mobility?

6. Show that the resistivity of an intrinsic germanium at 3000 K is 45 -cm. Take

ni =2.5× 1013 cm-3 ,n=3800 cm2/V-s and p=1800 cm2/V-s.

7. Calculate minimum possible value of conductivity for silicon sample. Take

ni =1.5× 1010 cm-3 ,n=1350 cm2/V-s and p=500 cm2/V-s.

8. Describe the Einstein relationship.

9. Calculate the mean free time of an electron having a mobility of 1000 cm 2/V-s at 300
K. Using mean free time, calculate the mean free path where the thermal velocity of
electrons is about 107 cm/s. Assume mn = 0.3 m0 in these calculations.

10. Assume that the mobility of electrons in silicon at T=300 0K is µn = 1200 cm2/V-s.
Also assume that the mobility is mainly limited by lattice scattering. Determine the
electron mobility at (a) T = 100 0K, (b) T = 200 0K and (c) T = 400 0K

11. The total current in a semiconductor is constant and is composed of electron drift
current and hole diffusion current. The electrons concentration is constant and equal to
1016 cm-3. The hole concentration is given by
 p ( x ) =1015 exp (−Lx ) cm −3
(x≥ 0 ¿

Where L = 10 μm.The hole diffusion coefficient is D p = 14 cm2/s and electron

mobility is μn = 1000 cm2/V-s. The total current density is J = 4.8 A/cm2. Calculate
(a) The hole diffusion current density versus x
(b) The electron current density versus x
(c) The electric field versus x.

12. How the electron concentration in silicon sample doped with 1015 cm-3 P atoms will
vary in the temperature range of 4.2 -1000 K?

13. Given that at room temperature the volt equivalent of temperature VT = 26mV, hole
mobility µp = 500 cm2/Vs and the lifetime of the holes is 130 ns, in a sample of n-type
silicon bar that is exposed to radiation at one end at low injection level, what is the
diffusion length of holes?

14. Assume electronic charge q =1.6×10-19 C, KT/q =25mV and electron mobility µ n =
1000 cm2/V-s. If the concentration gradient of electrons injected into a P-type silicon
sample is 1×1021 /cm4, then what is the magnitude of electron diffusion current density
(in A/cm2).

15. The diffusion constant for holes in silicon is 10cm2/s. What is the diffusion current if
dP
the gradient of the hole concentration =−2 ×1012 holes per cm3 per cm?
dx

16. A semiconductor wafer is 0.5mm thick, a potential of 100mV is applied across the
thickness:-
(a) What is the electron drift velocity if the mobility is 0.2m2/V-sec?
(b) How much time is required for an electron to move across this thickness?

17. N-type silicon sample contain a donor concentration of N D=1018 /cm 3.The minority
carrier hole lifetime is τ p=10 µs . What will be the lifetime of majority carrier?
[assume ni =1.5× 1010 /cm 3]

18. Consider a sample of silicon at T = 300 K doped at an impurity concentration of Nd=

l015 / cm3 and Na= 1014/ cm3. Calculate the drift current density if the applied electric
field is E = 35 V/cm. (Take n=1350cm2/V-s, p=480cm2/V-s).

19. A drift current density of J= 120A/cm2 is required in a particular semiconductor device

using p-type silicon with an applied electric field of E = 20 V/cm. Determine the
required impurity doping concentration to achieve this specification. (Take p=480
cm2/V-s).
20. The hole concentration in silicon varies linearly from x = 0 to x = 0.01 cm. The hole
diffusion coefficient is Dp= 10 cm2 /s, the hole diffusion current density is 20A/cm2,
and the hole concentration at x = 0 is p= 4 x 1017 / cm3. What is the value of the hole
concentration at x= 0.01 cm?