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Classification of crystals
showing the classes with
piezoelectric, pyroelectric,
and
ferroelectric effects.
• The local alignment of dipoles can
exist over any length scale.
• Different regions may exist with
different polarisation
orientations:
– Call these “domains” in line
with magnetic materials.
– In contrast with magnetism,
domain walls are abrupt.
The paraelectric-to-ferroelectric transition in oxide
ferroelectrics is accompanied by lattice strains which cause
local deformations and internal mechanical stresses,
depending on the boundary constraints.
The formation of
regions with oriented
domains (ferroelectric
domain structure)
separated by
discontinuity regions
(domain walls) takes
place in order to
minimize the system’s
free energy, i.e., the
electrostatic and
internal mechanical
stress contributions.
Applied field
Suppose we now apply an electric field, horizontal in the figure. If it is of
sufficient strength, the small ions will be able to overcome the barrier and dipoles
will switch direction. The dipoles are polarised by the applied field. Domain walls
move.
Polarisation vs. E-field
Suppose we start with a material where there are many
domains which are aligned randomly. What is the initial
polarisation? If we apply a small electric field, such
that it is not able to switch domain alignments, then
the material will behave as a normal dielectric: PE
As E is increased, we start to flip domains and rapidly
increase P.
When all domains are switched, we reach saturation. P
What happens if the E-field is now removed?
Curie temperature
Above a critical temperature the
spontaneous polarisation will be lost due
to one of two effects:
– A change of structure such that
there is a single minimum in the
energy mid-way between sites
– The rate that the small ions hop is
so high that on average there is
no net polarisation
Dielectric polarization Paraelectric polarization Ferroelectric polarization
100 MHz
5
Loss tangent · 10
200
Permittivity
4
160
3
120 100 kHz 2
80 1
0
-2
-8 -4 0 4 8
Applied Voltage (V)
Tunable materials for microwave devices
RF in + DC bias
(via a bias-tee)
RF out
Decoupling Inductors
Capacitors Connect decoupling
Microstrip’s Ground Plane capacitors to the
ground
Dielectric
larger
instability
Exercises: