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MICROWAVE
SEMICONDUCTOR
DEVICES
e = Electron charge
μ = Electron mobility
= Electron density in the lower valley
= Electron density in the upper valley
is the electron density
According to RWH theory, in order to exhibit
negative resistance the energy band structure
of semiconductor should satisfy
•C = Q/V
•If the ratio is not linear, the capacitive reactance is said
to be nonlinear. In this case it is convenient to define a
non linear capacitance as the partial derivative of charge
with respect to voltage.
i.e
C(v) = dQ/dt dQ
dv
The analogous definition of non linear inductance is
L(i) = dΦ/di.
V to be real,
The current flowing through C(t) is the total
derivative of Q w r t time. Hence,
Where
•Sincethe capacitance C(t) is assumed to be pure
reactance, the average power at the frequencies
• is
Since
Then,
Becomes,
And is independent of ωp or ωs.
For any choice of the frequencies fp and fs, the
resonating circuit external to thatof the nonlinear
capacitance C(t) can be so adjusted that the
currents may keep all the voltage amplitudes
Unchanged.
The charges are also unchanged, sincethey
are functions of the voltages .
Consequently, the frequencies can be
arbitrarily adjusted in order to require
Similarly,