Lecture 2.

BJTs - BJT AC Analysis

Contents
• 1. Introduction
• 2. Amplification in the AC domain
• 3. BLT Transistor modeling
• 4. The Re Transistor model
• 5. Common – Emitter Fixed point configuration
• 6. Voltage- Divider Bias
• 7. Emitter -Follower Bias configuration
• 8. CB configuration
• 9. Collector feedback configuration
• 10.Collector DC feedback configuration
• 11.Effect of RL and RS
• 12.Determining the current Gain
Objective
● Become familiar with the r e , hybrid, and hybrid p models for the BJT transistor.
● Learn to use the equivalent model to find the important ac parameters for an
amplifier.
● Understand the effects of a source resistance and load resistor on the overall gain
and characteristics of an amplifier.
● Become aware of the general ac characteristics of a variety of important BJT
configurations.
● Begin to understand the advantages associated with the two-port systems
approach to single- and multistage amplifiers.
● Develop some skill in troubleshooting ac amplifier networks.
BJT Transistor Modeling
• A model is an equivalent circuit that represents the
AC characteristics of the transistor.

• A model uses circuit elements that approximate the

behavior of the transistor.

• There are two models commonly used in small signal

AC analysis of a transistor:

– re model
– Hybrid equivalent model
The re Transistor Model

• BJTs are basically current-controlled devices; therefore the re model

uses a diode and a current source to duplicate the behavior of the
transistor.

• One disadvantage to this model is its sensitivity to the DC level.

This model is designed for specific circuit conditions.
The re Transistor Model

Common-Emitter Configuration
• The equivalent circuit of Fig above will be used throughout
the
analysis to follow for the common-emitter configuration.
Common-Emitter Fixed-Bias Configuration

• The input is applied to the base

• The output is from the collector
• High input impedance
• Low output impedance
• High voltage and current gain
• Phase shift between input and
output is 180
Common-Emitter Fixed-Bias Configuration

AC equivalent

re model
Common-Emitter Fixed-Bias Calculations
Input impedance:
Z i  R B || re
Z i  re R E 10re

Output impedance:
Z o  R C || rO
Z o  R C ro 10R C

Voltage gain: Current gain:

Vo (R C || ro ) Io  R B r o
Av  
Vi re Ai  (ro  CR )(R B 
Ii
A v   R C r 10R re )
re o C ro 10R C , R B 10re
Ai  
Current gain from voltage gain:
Zi
A i  A v
RC
Common-Emitter Voltage-Divider Bias

re model requires you to determine , re, and ro.

Common-Emitter Voltage-Divider Bias Cal.
Input impedance:

R   R 1 || R 2

Z i  R  || re

Output impedance:
Z o  R C || ro
Current gain:
Z o  R C r 10R Io Rro
o C Ai  
Ii (ro  R C )(R  
Voltage gain: I
o ) R 
A i  r e ro 10R C
Ii R 
Vo  R C || ro I
Av   A i  r
o 
ro 10R C , R  10re
Ii e
V R
A v  Voi  re C
Vi ro 10R C Current gain from voltage gain:
re Z
A i  A v i
Common-Emitter Emitter-Bias Config.
Impedance Calculations

Input impedance:
Z i  R B || Z b
Z b  re  (  1)R E
Z b  (re  R E )
Z b  R E

Output impedance:
Zo  RC
Gain Calculations
Voltage gain:

Vo R C
Av  
Vi Zb
Vo RC
Av  
Vi re  R E Z b (re  R E )
Vo RC
Av  
Vi Z b R E

RE

Current gain: Current gain from voltage gain:

Io R B Zi
Ai   A i  A v
Ii RB  Zb RC
Feedback Pair

This is a two-transistor circuit that operates like a

Darlington pair, but it is not a Darlington pair.

It has similar characteristics:

• High current gain
• Voltage gain near unity
• Low output impedance
• High input impedance

The difference is that a Darlington

uses a pair of like transistors,
whereas the feedback-pair
configuration uses complementary
transistors.
Current Mirror Circuits

Current mirror circuits

provide constant current
in integrated circuits.

Example 4.26: Calculate the mirrored current I in the above circuit

given, Rx = 1.1 kΩ and +Vcc = 12 V.