DIFFUSION

PRESENTED BY
AP23122140001
AP23122140002
AP23122140003
AP23122140004
AP23122140005
AP23122140006
AP23122140007
Contents
◎ Introduction
◎ Types of Diffusion
◎ Diffusion System
◎ Characterization equipment's and techniques
◎ Diffusion Models
◎ Diffusion Process
Introduction
◎ Diffusion is the process of transferring the particle (impurities – in
view of the semiconductor ) from high concentration to low
concentration.
Mechanism of Diffusion in silicon
 Substitutional Diffusion : Impurities present in the vacancy.

 Interstitial Diffusion : Impurity atoms presents in between Si atom lattices.

 Interstitialcy Diffusion : occurs both substitutional and interstation diffusion

Diffusion System
 Characterization equipment's and
techniques
 1. SIMS: Used for measurement of dopant concentration

 2. Spreading resistance: Used for measurement dopant profile concentration, by measuring the resistivity

 3. Sheet resistance: Used for the dopant profile.

 4. Capacitive- Voltage: Used mostly for lightly doped region doping profile.

 5. TEM Cross Sectional: Very thin cross section of diffused silicon is made by etching of silicon and

observed through TEM. Different doped areas have different contrast (colours).
Diffusion Models

• Macroscopy (Classical): Microscopy deals with concentration gradient

of dopant (physical basis)

• Microscopy (Atomic): Interaction between dopant and crystal defects

(atomic scale)
 Diffusion Processes

PRE-DEPOSITION DRIVE-IN
THANK YOU