Outline

 Common Source Gate Amplifier

 Common Drain Amplifier

03/13/24 1
 Recap
 Common Gate Amplifer
 Common Drain Amplifer

03/13/24 2
 Common Gate(CG) Amplifier

CS Amplifier
 Common Gate(CG) Amplifier

R
Rsig
sig

vsigvsig
Common Gate(CG) Amplifier

(AC)Small Signal
Analysis

T Model

Rsig 1/gm

vsig vi
 Common Gate(CG) Amplifier

AC GND
Common Gate(CG) Amplifier

(AC)Small Signal
Analysis

T Model

Rsig 1/gm
1/gm

vsig vi
 Common Gate(CG) Amplifier

Input Resistance, Rin

Rsig 1/gm

vsig vi

Rin
 Common Gate(CG) Amplifier

Input Voltage, vi
Common Gate(CG) Amplifier

i1

Rin
Common Gate(CG) Amplifier

Vd V0
Common Gate(CG) Amplifier

Positive Sign
Common Gate(CG) Amplifier
Common Gate(CG) Amplifier
Vd V0

Rout
Common Gate(CG) Amplifier
Common Gate(CG) Amplifier
Common Gate(CG) Amplifier
Common Drain(CD) Amplifier
 Common Drain(CD) Amplifier
(AC)Small Signal
Analysis
AC GND

Channel
Length
T Model Modulation

Input (vsig)
Output (vo)
Common Drain(CD) Amplifier
Common Drain(CD) Amplifier

Rin =RG
23
Common Drain(CD) Amplifier

Rout = r0 // (1/gm)
Problem 1
Problem 2
Problem 3
 Outline
 MOSFET Capacitances

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Common Source(CS) Amplifier

Coupling
Capacitors
to block DC

AC Ground

RG should Constant
be High Current
Value source for
biasing
Common Source(CS) Amplifier
Capacitances in MOS
Capacitances in MOS
Gate Capacitances in MOS
Gate Capacitances in MOS
Gate Capacitances in MOS
Junction Capacitances in MOS
Junction Capacitances in MOS
Capacitances in MOS
 Role of substrate
• In many applications the source terminal is
connected to the substrate terminal B which results
in the PN junction between the substrate and the
induced channel having zero (cutoff) bias

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 Role of substrate
• The reverse bias voltage will widen the depletion region
.This in turn reduces the channel depth

• To return to its former state -------has to be increased

VGS
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 Role of substrate
• The effect of V on the channel can be
SB

most convinently represented as a

change in the threshold voltage Vt

Vto - threshold voltage for VSB = 0

- Fabrication process
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 Role of substrate

• If V changes then there is incremental

SB

change in V , which in turn results in

t

incremental change in i even though v is

D GS

constant

• The body (substrate ) controls i thus the body

D

acts as another gate for the MOSFET , a

phenomenon
03/13/24 known as Body Effect 42