Radio Frequency Circuit Design. W.

Alan Davis, Krishna Agarwal

Copyright 2001 John Wiley & Sons, Inc.
Print ISBN 0-471-35052-4 Electronic ISBN 0-471-20068-9

APPENDIX F

Transistor and Amplifier

Formulas

The following formulas are meant as a reminder of the fundamentals given in

most standard electronics textbooks. Notation for the formulas have the traditional meanings. Depletion capacitances are all given with a negative sign in
the denominator as in C D C0 /1  V/ . Consequently, when the junction is
reverse biased, the minus sign turns into a positive sign. Figure F.1 presents the
basic FET features and symbols.
Bipolar Transistor Parameters (BJT)
DESCRIPTION

FORMULA

Collector current

IC D IS exp

Transconductance

gm D

Input resistance
Output resistance
Base charging capacitance
Emitter base junction

qVBE
kT

qIC
kT
0
r D
gm
VA
ro D
IC
CD D F gm



qNB 1/3
Cje D AE
Vj

Input capacitance

C D CD C Cje

Collector base

C D

300

Co
[1  VBC /

oc ]

1/3

TRANSISTOR AND AMPLIFIER FORMULAS

Ccso
[1  Vsc / os ]1/2
gm
1
fT D
2 C C C 

Collector substrate

Ccs D

Transition frequency
Thermal voltage

VT D

kT
D 0.259 V
q

FET Symbols

ID
NMOS Depletion.
NJFET

NMOS Enhance.

V GS

PMOS Enhance.

PMOS Depletion.
PJFET

n -Channel JFET

p -Channel JFET

n -Channel MOSFET
Enhancement

p -Channel MOSFET
Enhancement

n -Channel MOSFET
Depletion

p -Channel MOSFET
Depletion

FIGURE F.1

FET symbols.

301

302

TRANSISTOR AND AMPLIFIER FORMULAS

Junction Field Effect Transistor Parameters (JFET)

DESCRIPTION

Saturated drain current

Ohmic region drain current

Transconductance
Output resistance
Gate source capacitance
Gate drain capacitance

FORMULA




VGS 2
VDS
ID D IDSS 1 
1
VP
VA
VDS VGS  VP

 0 C VGS  VDS 3/2

3/2

3
 0 C VGS 

ID D Go
V
C
DS

2
 0 C VP 1/2

VDS < VGS  VP

2aW
G0 D
c
L

ID K 2VGS  VP VDS  V2DS


2IDSS
VGS
gm D
1
VP
VP
VA
ro D
ID
Cgs0
Cgs D
[1  VGS / 0 ]1/3
Cgd0
Cgd D


VGD 1/3
1
0

N Channel JFET

Cgss0
Cgss D
[1  VGSS /
VP < 0

P Channel JFET

VP > 0

Gate substrate capacitance

0 ]

1/2

Metal Oxide Semiconductor Field Effect Transistor Parameters (MOSFET)

DESCRIPTION

Saturation region drain

current
Ohmic region drain current

FORMULA


Cox W
VDS
2
ID D
VGS  Vt  1 
2L
VA

VDS VGS  Vt

Cox W
ID D
2VGS  Vt VDS  V2DS
2L



VDS
1
VA
VDS < VGS  Vt

TRANSISTOR AND AMPLIFIER FORMULAS

ox
tox

Oxide capacitance

Cox D

Transconductance

gm D Cox

Output resistance

ro D

Input capacitance

Cin D CGS C CGD D Cox LW

Transition frequency

fc D

Surface mobility holes

s D 200 cm2 /V-s

Surface mobility electrons

s D 450 cm2 /V-s

jVA j
ID0

gm
s VGS  Vt 
D
2Cin
2L 2

N CHANNEL JFET

P CHANNEL JFET

IDSS > 0

IDSS < 0

VP < 0

VP > 0

gmo

2IDSS
VP

KD

IDSS
>0
V2P

VP < VGS for jIDS j > 0

gmo D

KD

2IDSS
VP

IDSS
<0
V2P

VGS < VP for jIDS j > 0

NMOS ENHANCEMENT

PMOS ENHANCEMENT

Vt > 0

Vt < 0

VGS > Vt

VGS < Vt

KD

n Cox W
>0
2L

W
VGS  Vt 
L

KD

p Cox W
<0
2L

NMOS DEPLETION

PMOS DEPLETION

Vt < 0

Vt > 0

VGS > Vt < 0 for jIDS j > 0

VGS < Vt < 0 for jIDS j

KD

n Cox W
>0
2L

KD

p Cox W
<0
2L

303

304

TRANSISTOR AND AMPLIFIER FORMULAS

Small Signal Single-Transistor Amplifier Configurations

MOSFET

BJT

Common source

Common emitter

Rin D RG D R1 jjR2
Rout D RD jjr0

Rin D r C rb jjRB r

Rout D Rc jjr0

p
AV D gm r0 jjRD jjRL  / 1/ ID

AV D gm Rc jjr0 jjRL 

Source degeneration

Emitter degeneration

Rin D RG D R1 jjR2

Rin D r C RE  C 1

Rout D r0 [1 C gm C gmb RS ]

r 1 C gm RE 

Rout D RE jjr C r0 1 C gm r jjRE 

CRS
gm
Gm D
1 C gm C gmb RS

r0 1 C gm RE 
gm
Gm D
1 C gm RE

Commmon gate
RD
Rin D
1 C RD gm C gmb 
1

gm C gmb

Common base
0
rb
0
C
Rin D re D

gm
C1
gm

Rout D RD

Rout D r0 1 C jjRc



1
Gm D gm
gm
1 C rb /r

Gm D gm C gmb

AV D gm Rc jjRL 
gm Rc
RE
AI D
gm re D 0
Rc C RL 1 C gm RE
Common drain (source follower)

Commmon collector (emitter follower)

Rin D R1 jjR2

Rin D r C rb C  C 1r0 jjRE 

r0
1 C r0 gm C gmb 
1

gm C gmb

Rout D

AV D

gm RS jjr0 
1 C RS jjr0 gm C gmb 

1
1
1 C gmb /gm

Rout D

1
r C RBB C rb
RBB C rb

C
1C
gm
1C

AV D

1
1
1 C [RBB C rb C r /
RE jjr0  C 1]