Course Name: Analog VLSI Circuits

Faculty Name: Dr. Pradip Mandal

Department : Electronics and Electrical Communication

Engineering

Topic:
Pre-requisite and Recapitulation (contd.)
 Sub-topics to be covered in this lecture:
 Recapitulation: I-V characteristic of MOSFET (enhancement mode)

 Recapitulation: Working models of MOSFET

 Usability of simple model in sub-micron technologies

 Recapitulation: Working model of n-MOSFET
Large signal I-V characteristic equations:

Small signal characteristic equations and model parameters:

 Recapitulation: Working model of n-MOSFET (contd.)

Small signal characteristic equations and equivalent circuit:

Effect of body bias:

 Recapitulation: I-V characteristic of p-MOSFET

Biasing and operation of p-MOSFET (enhancement mode):

I-V characteristic equation:

 Recapitulation: Working model of p-MOSFET

Small signal characteristic equations and equivalent circuit:

 Recapitulation: Model of n-MOSFET
Small signal model and equivalent circuit:

High frequency Small signal model and equivalent circuit:

 Note: Usability of simple model in sub-micron technologies
 Simple model may be off by a large factor !

 Have to use alternate (more accurate), cumbersome model (BSIM)

 Simple model is still useful for qualitative analysis of circuit
 Alpha-power model along with empirically extracted model
parameter values gives reasonable accuracy
 Summarization of this lecture
 Operating principle of MOSFET (enhancement mode)

 I-V characteristic of MOSFET

 Working models of MOSFET

 Usability of simple model in sub-micron technologies