TheUnijunctionTransistor

Base 2 n p rB1 Base 1 B Construction B1 Symbol B1 Equivalent Circuit B2 E E B2 rB2

Emitter E i

NotesonUJT
UJThasonlyonepnjunction. Ithasanemitterandtwobases,B Ithasanemitterandtwobases B1 andB2.
rB1 andrB2 areinternaldynamicresistances.

Theinterbaseresistance,rBB =rB1 +rB2. r B1 variesinverselywithemittercurrent,I rB variesinverselywithemittercurrent IE rB1 canrangefromseveralthousandohmsto tensofohmsdependingonIE. t f h d di I

BasicUJTBiasing
VrB1 = VBB = rB1/rBB is the standoff ratio. B2 rB2 E + VEB1 r B1 _ B1 VBB + V _ BB If VEB1 < VrB1 + Vpn, IE = 0 since pn junction is not forward biased (Vpn = barrier potential of pn junction) At VP = VBB + Vpn, the UJT turns on and operates in a negative resistance region up to a certain value of IE. It then becomes saturated and IE increases rapidly with VE.

UJTCharacteristicCurve
VE Cutoff VP Negative Resistance Peak Saturation

Valley VV IP IV IE

ApplicationsofUJT
UJT can be used as trigger device for SCRs and triacs. Other applications include nonsinusoidal oscillators, sawtooth generators, generators phase control and timing circuits. control, circuits VE +VBB VP RE VE C Relaxation oscillator VB1 VV VB1 t

R1

t Waveforms for UJT relaxation oscillator

ConditionsForUJTOscillator Operation
Intherelaxationoscillator,RE mustnotlimitIE atthe peakpointtolessthanIP atturnon,i.e.,VBB VP >IPRE. ToensureturnoffoftheUJTatthevalleypoint,RE must belargeenoughthatIE candecreasebelowIV,i.e., VBB VV <IVRE. So,forproperoperation: V V V V
BB P

IP
R1 is usually << RE, and the frequency of oscillations is

> RE >

BB

IV

V BB V V f o = R E C ln V BB V P

UJTFrequencyofOscillation
AssumingVV 0andVP VBB
1 f o = R E C ln 1
1

FormostUJT 0.63
f o = [R EC ]
1

UJTOscillatorExample
For the shown oscillator: =0.63 rBB=9.2 k Vv=1.5V IV=3.5mA IP=5A Find: (a) VP ( ) (b) Oscillation Frequency q y (c) REmin and REmax (d) Sketch VB1

UJTRelayTimer
R3 is chosen to maintain CR relay coil energized but not to pick the coil p

The delay is set by (REF+REV)CE

UJTasSCRTrigger

For component sizing refer to the text book

TheProgrammableUJT
ThePUT isactuallyatypeofthyristor ItcanreplacetheUJTinsomeoscillator applications. ItismoresimilartoanSCR(fourlayerdevice) exceptthatitsanodetogatevoltagecanbe usedtobothturnonandturnoffthedevice.

PUTConstruction&Symbol
Anode (A) +V R1 R2 G Vin K R3

p n p n
Cathode (K)

Gate (G)

Basic Construction

PUT Symbol and Biasing

NotesOnPUT
Noticethatthegateisconnectedtothen regionadjacenttotheanode. regionadjacenttotheanode Thegateisalwaysbiasedpositivewith respecttothecathode. tt th th d WhenVA VG >0.7V,thePUTturnson. Thestandoffratioisreplacedbyexternal elementstoprogramVP ThecharacteristicplotofVAK versusIA is similartotheVE versusIE plotoftheUJT. i il t th V I l t fth UJT

PUTRelaxationOscillator
RG1V can control the R frequency of oscillation with a constant charging rate Can operate from lower supply voltages compared to UJT Can be used for very low frequencies thanks to the availability of lower IP

ConstantSlopeRamp Generator

VG determines the ramp height