0 0 -0.

5 2 4 6 8 10 12 14

-1 Vout (V)

-1.5

No optical input -10dBm

-2

-2.5

-3

Vpd (V)

Vpd(V) 6 7 8 9 10 11 12 13

Vout(V) -No Vpd(V) Vout(V) -10 optical input dBm input -1.948 6 -2.426 -1.948 7 -2.426 -1.948 8 -2.426 -1.948 9 -2.426 -1.948 10 -2.426 -1.948 11 -2.426 -1.948 12 -2.426 -1.948 13 -2.426

The results were obtained as expected. First, when a sufficiently large reverse-biased voltage is applied across the PIN diode, the intrinsic region is fully depleted. We can see that Vout (with -10dBm input) does not change with the Vpd and this shows that the PIN diode is operating normally under Vpd from 6-13V. Second, we can see that Vout (with 10dBm input) is larger than Vout(zero input). When an incident photon has an energy greater than or equal to the band-gap energy of the

semiconductor material, the photon can give up its energy and generates free electron-hole pairs. The high electric field (caused by reverse biased voltage) in the depletion region drives the carriers to separate and be collected across the reverse biased junction. This gives rise to a current flow in an external circuit, with one electron flowing for every carrier pair generated. The photons from -10dBm laser definitely generate a larger photon current (as described above) in comparison with zero optical input and therefore we see a larger Vout.

Iout Vs. Power

0.36 0.35 0.34 Iout (mA) 0.33 0.32 0.31 0.3 0.29 0.28 0.27 Iout Vs. Power

Optical Power (mW)

Power (mW) 0.009616123 0.012302688 0.014521116 0.023988329 0.038994199 0.049090788 0.057543994 0.076736149 0.1

Output current (mA) 0.285 0.286285714 0.288571429 0.301571429 0.314 0.322142857 0.331285714 0.340714286 0.346428571