BSS 119

SIPMOS Small-Signal Transistor

N channel Enhancement mode VGS(th) = 1.6 ...2.6 V

Pin 1 G

Pin 2 S

Pin 3 D

Type

VDS
100 V

ID
0.17 A

RDS(on)
6

Package

Marking

BSS 119
Type BSS 119

SOT-23

sSH

Ordering Code Q67000-S007

Tape and Reel Information E6327

Maximum Ratings Parameter Symbol Values Unit

Drain source voltage Drain-gate voltage

RGS = 20 k

VDS V
DGR

100

100
VGS

Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current
TA = 28 C

20
Class 1 A 0.17

ID

DC drain current, pulsed

TA = 25 C

IDpuls

0.68
Ptot

Power dissipation
TA = 25 C

W 0.36

Data Sheet

05.99

BSS 119

Maximum Ratings Parameter Symbol Values Unit

Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Therminal resistance, chip-substrate- reverse side 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Tj Tstg RthJA RthJSR

-55 ... + 150 -55 ... + 150

350 285
E 55 / 150 / 56

K/W

1) For package mounted on aluminium

15 mm x 16.7 mm x 0.7 mm

Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 C

V (BR)DSS

V 100 -

Gate threshold voltage

VGS=VDS, ID = 1 mA

V GS(th)

1.6
IDSS

2.6

Zero gate voltage drain current

VDS = 100 V, V GS = 0 V, Tj = 25 C VDS = 100 V, V GS = 0 V, Tj = 125 C VDS = 60 V, VGS = 0 V, Tj = 25 C

IGSS

0.05 0.5 -

0.5 5 100

nA nA

Gate-source leakage current

VGS = 20 V, VDS = 0 V

RDS(on)

10

100

Drain-Source on-state resistance

VGS = 10 V, ID = 0.17 A VGS = 4.5 V, ID = 0.17 A

4 6 6 10

Data Sheet

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BSS 119

Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit

Transconductance
VDS 2 * ID * RDS(on)max, ID = 0.17 A

gfs

S 0.1 0.2 pF 70 95

Input capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz

Ciss

Output capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz

Coss

Crss

10

15

Reverse transfer capacitance

VGS = 0 V, V DS = 25 V, f = 1 MHz

td(on)

6 ns

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50

tr

Rise time
VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50

td(off)

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50

tf

12

16

Fall time
VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50

12

16

Data Sheet

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BSS 119

Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit

Inverse diode continuous forward current

TA = 25 C

IS

A 0.17

Inverse diode direct current,pulsed

TA = 25 C

ISM

V SD

0.68 V

Inverse diode forward voltage

VGS = 0 V, IF = 0.34 A, Tj = 25 C

0.85

1.3

Data Sheet

05.99

BSS 119

Power dissipation Ptot = (TA)

Drain current ID = (TA) parameter: VGS 10 V

0.18 A

0.40 W

Ptot

0.32 0.28

ID

0.14 0.12

0.24 0.10 0.20 0.08 0.16 0.12 0.08 0.04 0.00 0 20 40 60 80 100 120 C 160 0.06 0.04 0.02 0.00 0 20 40 60 80 100 120 C 160

TA

TA

Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C

Drain-source breakdown voltage V(BR)DSS = (Tj)

120 V 116 114 V(BR)DSS 112 110 108 106 104 102 100 98 96 94 92 90 -60

-20

20

60

100

160

Tj

Data Sheet

05.99

BSS 119

Typ. output characteristics ID = (VDS) parameter: tp = 80 s

0.38 A 0.32

Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C

19

Ptot = 0W

lk ji g f h

e
VGS [V] a 2.5
b c 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0

16

ID
0.28

RDS (on)
14 12 10 8 6 4 2
VGS [V] =
a 3.0 2.5 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 7.0 8.0 j 9.0 k 10.0

0.24 0.20 0.16

c

d e f g h i j k l

0.12 0.08 0.04

a

d e fi g h k

0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0

0 0.00 0.04 0.08 0.12 0.16 0.20 A 0.28

VDS

ID

Typ. transfer characteristics ID = f(VGS)

Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 s
VDS 2 x ID x RDS(on)max
0.75 A 0.65
ID

parameter: tp = 80 s,
V DS2 x ID x RDS(on)max
0.40

S
gfs

0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 1 2 3 4 5 6 7 8 V
VGS

0.30

0.25

0.20

0.15

0.10

0.05 0.00 10 0.00 0.10 0.20 0.30 0.40 0.50 A

ID

0.65

Data Sheet

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BSS 119

Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 0.17 A, VGS = 10 V

15

Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA

4.6 V 4.0

13

RDS (on) 12
11 10 9 8 7 6 5 4 3 2 1 0 -60 -20 20 60 100 C 160

VGS(th)

3.6 3.2 2.8

98%

98%

2.4

typ
2.0

2% typ
1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160

Tj

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS=0V, f = 1 MHz
10 3

Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s

10 0

pF
C

IF
10 2
Ciss

10 -1

10 1

Coss

10 -2

Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)

Crss

10 0 0

10

15

20

25

30

V
VDS

40

10 -3 0.0

0.4

0.8

1.2

1.6

2.0

2.4

3.0

VSD

Data Sheet

05.99