BUZ 74

SIPMOS Power Transistor

N channel
Enhancement mode
Avalanche-rated

Pin 1

Pin 2

Pin 3

Type

VDS

ID

RDS(on)

Package

Ordering Code

BUZ 74

500 V

2.4 A

TO-220 AB

C67078-S1314-A2

Maximum Ratings
Parameter

Symbol

Continuous drain current

ID

TC = 30 C

Values

Unit
A

2.4

IDpuls

Pulsed drain current

TC = 25 C

9.5

Avalanche current,limited by Tjmax

IAR

2.4

Avalanche energy,periodic limited by Tjmax

Avalanche energy, single pulse

EAR

mJ

EAS

ID = 2.4 A, VDD = 50 V, RGS = 25

L = 56.3 mH, Tj = 25 C

180

Gate source voltage

VGS

Power dissipation

Ptot

TC = 25 C

20

V
W

40

Operating temperature

Tj

-55 ... + 150

Storage temperature

Tstg

-55 ... + 150

Thermal resistance, chip case

RthJC

3.1

Thermal resistance, chip to ambient

RthJA

75

DIN humidity category, DIN 40 040

K/W

IEC climatic category, DIN IEC 68-1

Semiconductor Group

55 / 150 / 56
1

07/96

BUZ 74

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Static Characteristics
Drain- source breakdown voltage

V(BR)DSS

VGS = 0 V, ID = 0.25 mA, Tj = 25 C

Gate threshold voltage

500

VGS(th)

VGS=VDS, ID = 1 mA
Zero gate voltage drain current

2.1

IDSS

VDS = 500 V, VGS = 0 V, Tj = 25 C

0.1

VDS = 500 V, VGS = 0 V, Tj = 125 C

10

100

Gate-source leakage current

IGSS

VGS = 20 V, VDS = 0 V
Drain-Source on-resistance

10

100

RDS(on)

VGS = 10 V, ID = 1.5 A

Semiconductor Group

nA

2.5

07/96

BUZ 74

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Dynamic Characteristics
Transconductance

gfs

VDS 2 * ID * RDS(on)max, ID = 1.5 A

Input capacitance

1.8

pF
-

450

675

50

75

20

30

Crss

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

Coss

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

2.1

Ciss

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

td(on)

ns

VDD = 30 V, VGS = 10 V, ID = 2.1 A

RGS = 50
Rise time

12

40

60

50

65

30

40

tr

VDD = 30 V, VGS = 10 V, ID = 2.1 A

RGS = 50
Turn-off delay time

td(off)

VDD = 30 V, VGS = 10 V, ID = 2.1 A

RGS = 50
Fall time

tf

VDD = 30 V, VGS = 10 V, ID = 2.1 A

RGS = 50

Semiconductor Group

07/96

BUZ 74

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Reverse Diode
Inverse diode continuous forward current IS
TC = 25 C
Inverse diode direct current,pulsed

9.5
V

1.3

trr

ns
-

300

Qrr

VR = 100 V, IF=lS, diF/dt = 100 A/s

Semiconductor Group

2.4

VR = 100 V, IF=lS, diF/dt = 100 A/s

Reverse recovery charge

VSD

VGS = 0 V, IF = 4.8 A
Reverse recovery time

ISM

TC = 25 C
Inverse diode forward voltage

C
-

2.5

07/96

BUZ 74

Drain current
ID = (TC)
parameter: VGS 10 V

Power dissipation
Ptot = (TC)

2.6

45

A
W

Ptot

2.2

ID

35

2.0
1.8

30
1.6
25

1.4
1.2

20

1.0
15

0.8
0.6

10

0.4
5
0
0

0.2
0.0
20

40

60

80

100

120

160

20

40

60

80

100

120

TC

Safe operating area

ID = (VDS)
parameter: D = 0.01, TC = 25C

160

Transient thermal impedance

Zth JC = (tp)
parameter: D = tp / T

10 2

10 1

ID

TC

K/W

ZthJC

t = 21.0s
p

10 1

10 0

100 s

10 0

1 ms

DS
(o
n)

10 -1
D = 0.50

0.20
10 ms

0.10

10 -1

0.05

10 -2

0.02

DC

0.01

single pulse

10 -2
0
10

10

10

V 10

10 -3
-7
10

VDS

Semiconductor Group

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

s 10

tp

07/96

BUZ 74

Typ. output characteristics

ID = (VDS)

Typ. drain-source on-resistance

RDS (on) = (ID)
parameter: VGS

parameter: tp = 80 s
Ptot = 40W

k i h
g
j

ID

10

5.5

f
VGS [V]

4.5

4.0
3.5
d

3.0
2.5
2.0

1.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

9.0

10.0

20.0

RDS (on)

8
7
6
5
d

e
f

0.5
a

0.0
0

10

15

20

25

30

35

VGS [V] =
a
5.0
4.5
4.0

b
5.5

c
6.0

d
6.5

e
f
7.0 7.5

g
8.0

h
i
j
9.0 10.0 20.0

0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

45

1.0

VDS

Typ. transfer characteristics ID = f (VGS)

Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 s
VDS2 x ID x RDS(on)max

parameter: tp = 80 s,
VDS2 x ID x RDS(on)max

ID

5.0

ID

4.5

4.0

gfs

3.5

3.0

3.0
2.5
2.5
2.0
2.0
1.5
1.5
1.0

1.0

0.5

0.5
0.0
0

10

VGS

Semiconductor Group

0.0
0.0

0.5

1.0

1.5

2.0

2.5

3.0

A
ID

07/96

4.0

BUZ 74

Gate threshold voltage

VGS (th) = (Tj)
parameter: VGS = VDS, ID = 1 mA

Drain-source on-resistance
RDS (on) = (Tj )
parameter: ID = 1.5 A, VGS = 10 V
12

4.6

98%

4.0
10

RDS (on)

VGS(th)

3.6

typ

3.2
8
2.8

2.4

2%

2.0

98%

1.6

typ

1.2

3
2

0.8

0.4

0
-60

0.0
-60

-20

20

60

100

160

-20

20

60

100

Tj

Typ. capacitances

160

Tj

Forward characteristics of reverse diode

IF = (VSD)
parameter: Tj , tp = 80 s

C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1

10 1

nF

IF

C
10 0

10 0

Ciss

10 -1

10 -1

Tj = 25 C typ
Tj = 150 C typ

Coss

Tj = 25 C (98%)
Tj = 150 C (98%)

Crss
10 -2
0

10

Semiconductor Group

15

20

25

30

V
VDS

40

10 -2
0.0

0.4

0.8

1.2

1.6

2.0

2.4

VSD

07/96

3.0

BUZ 74

Avalanche energy EAS = (Tj )

parameter: ID = 2.4 A, VDD = 50 V
RGS = 25 , L = 56.3 mH

Typ. gate charge

VGS = (QGate)
parameter: ID puls = 4 A

190

16

mJ
V
160

EAS

VGS
140

12

120

10
0,2 VDS max

100

0,8 VDS max

80
6
60
4
40
2

20
0
20

0
40

60

80

100

120

160

Tj

12

16

20

24

28

nC

Q Gate

Drain-source breakdown voltage

V(BR)DSS = (Tj )

600
V
580

V(BR)DSS570
560
550
540
530
520
510
500
490
480
470
460
450
-60

-20

20

60

100

160

Tj

Semiconductor Group

07/96

36

BUZ 74

Package Outlines
TO-220 AB
Dimension in mm

Semiconductor Group

07/96

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