BSS 145

SIPMOS Small-Signal Transistor

N channel Enhancement mode VGS(th) = 1.4 ...2.3 V

Pin 1 G

Pin 2 S

Pin 3 D

Type

VDS
65 V

ID
0.22 A

RDS(on)
3.5

Package

Marking

BSS 145
Type BSS 145

SOT-23

SBs

Ordering Code Q67000-S132

Tape and Reel Information E6327

Maximum Ratings Parameter Symbol Values Unit

Drain source voltage Drain-gate voltage

RGS = 20 k

VDS V
DGR

65

65
VGS

Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current
TA = 31 C

20
Class 1 A 0.22

ID

DC drain current, pulsed

TA = 25 C

IDpuls

0.88
Ptot

Power dissipation
TA = 25 C

W 0.36

Data Sheet

05.99

BSS 145

Maximum Ratings Parameter Symbol Values Unit

Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, chip-substrate- reverse side 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Tj Tstg RthJA RthJSR

-55 ... + 150 -55 ... + 150

350 285
E 55 / 150 / 56

K/W

1) For package mounted on aluminium

15 mm x 16.7 mm x 0.7 mm

Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 C

V (BR)DSS

V 65 -

Gate threshold voltage

VGS=VDS, ID = 1 mA

V GS(th)

1.4
IDSS

2.3 A

Zero gate voltage drain current

VDS = 65 V, VGS = 0 V, Tj = 25 C VDS = 65 V, VGS = 0 V, Tj = 125 C

IGSS

0.1 8

0.5 50 nA

Gate-source leakage current

VGS = 20 V, VDS = 0 V

RDS(on)

10

100

Drain-Source on-state resistance

VGS = 10 V, ID = 0.2 A VGS = 3.5 V, ID = 0.02 A

1.6 3.5 6.5

Data Sheet

05.99

BSS 145

Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit

Transconductance
VDS 2 * ID * RDS(on)max, ID = 0.2 A

gfs

S 0.12 0.2 pF 60 80

Input capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz

Ciss

Output capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz

Coss

Crss

15

20

Reverse transfer capacitance

VGS = 0 V, V DS = 25 V, f = 1 MHz

td(on)

8 ns

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 0.2 A RGS = 50

tr

Rise time
VDD = 30 V, VGS = 10 V, ID = 0.2 A RGS = 50

td(off)

10

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 0.2 A RGS = 50

tf

12

16

Fall time
VDD = 30 V, VGS = 10 V, ID = 0.2 A RGS = 50

15

20

Data Sheet

05.99

BSS 145

Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit

Inverse diode continuous forward current

TA = 25 C

IS

A 0.22

Inverse diode direct current,pulsed

TA = 25 C

ISM

V SD

0.88 V

Inverse diode forward voltage

VGS = 0 V, IF = 0.4 A, Tj = 25 C

0.9

1.4

Data Sheet

05.99

BSS 145

Power dissipation Ptot = (TA)

Drain current ID = (TA) parameter: VGS 10 V

0.24 A 0.20

0.40 W

Ptot

0.32 0.28

ID

0.18 0.16

0.24 0.20 0.16 0.12

0.14 0.12 0.10 0.08 0.06

0.08 0.04 0.04 0.00 0 20 40 60 80 100 120 C 160 0.02 0.00 0 20 40 60 80 100 120 C 160

TA

TA

Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C

Drain-source breakdown voltage V(BR)DSS = (Tj)

77 V 74

V(BR)DSS
72 70 68 66 64 62 60 58 -60

-20

20

60

100

160

Tj

Data Sheet

05.99

BSS 145

Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C

0.50 A

Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C

11

Ptot = 0W

l k j ih g f
VGS [V] a 2.5
b 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0

RDS (on)
9 8 7 6 5 4 3 2
b

ID

0.40 0.35 0.30 0.25 0.20 0.15

c

c d e f g

d h
i j k l

0.10 0.05 0.00

a

VGS [V] =

e f g i hj k
c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 7.0 8.0 j 9.0 k 10.0

1 0 V 5.0

a 3.0 2.5

b 3.5

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 A 0.38

VDS

ID

Typ. transfer characteristics ID = f(V GS) parameter: tp = 80 s

Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s,

1.0 A
ID

0.40

S
gfs

0.8 0.7 0.6 0.5 0.4 0.3

0.30

0.25

0.20

0.15

0.10 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 V

VGS

0.05 0.00 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 A
ID

0.9

Data Sheet

05.99

BSS 145

Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 0.2 A, VGS = 10 V

9

Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA

4.6 V 4.0

RDS (on)
7 6 5

VGS(th)

3.6 3.2 2.8

98%
4 3 2 1 0 -60 -20 20 60 100 C 160

2.4 2.0 1.6

98% typ

2%

typ

1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160

Tj

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS=0V, f = 1 MHz
10 3

Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s

10 0

pF
C

IF
10 2
Ciss

10 -1

10 1

Coss

10 -2

Tj = 25 C typ
Crss

Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)

10 0 0

10

15

20

25

30

V
VDS

40

10 -3 0.0

0.4

0.8

1.2

1.6

2.0

2.4

3.0

VSD

Data Sheet

05.99