Final data

SPP07N60C2, SPB07N60C2 SPA07N60C2

Cool MOS Power Transistor

Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances
P-TO220-3-31

Product Summary VDS @ Tjmax 650 R DS(on) ID

P-TO263-3-2

V A

0.6 7.3

P-TO220-3-1

1 P-TO220-3-31

Type SPP07N60C2 SPB07N60C2 SPA07N60C2

Package P-TO220-3-1 P-TO263-3-2

Ordering Code Q67040-S4309 Q67040-S4310

Marking 07N60C2 07N60C2 07N60C2

P-TO220-3-31 Q67040-S4331

Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit

Continuous drain current

TC = 25 C TC = 100 C

A 7.3 4.6 7.31) 4.61) 14.6 230 0.5 7.3 6 20

30

Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse

ID =5.5A, VDD =50V

ID puls EAS EAR IAR

14.6 230 0.5 7.3 6 20

30

A mJ

Avalanche energy, repetitive tAR limited by Tjmax 2)

ID =7.3A, VDD =50V

Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt

IS = 7.3 A, VDS < VDD , di/dt=100A/s, Tjmax =150C

A V/ns V W

dv/dt
VGS VGS Ptot

Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C

83

32

Operating and storage temperature

Page 1

Tj , Tstg

-55...+150

2002-08-12

Final data Thermal Characteristics Parameter Characteristics

SPP07N60C2, SPB07N60C2 SPA07N60C2

Symbol min.

Values typ. max.

Unit

Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Linear derating factor Linear derating factor, FullPAK Soldering temperature, 1.6 mm (0.063 in.) from case for 10s

RthJC RthJC_FP RthJA RthJA_FP RthJA

35 -

1.5 3.9 62 80 62 0.66 0.25 260

K/W

W/K C

Tsold

Electrical Characteristics , at Tj = 25 C, unless otherwise specified Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =0.25mA

V(BR)DSS V(BR)DS VGS(th) IDSS

600 3.5

700 4.5

5.5

Drain-source avalanche breakdown voltage

VGS =0V, ID =7.3A

Gate threshold voltage, VGS = VDS

ID =350A

Zero gate voltage drain current

VDS = 600 V, VGS = 0 V, Tj = 25 C VDS = 600 V, VGS = 0 V, Tj = 150 C

A 0.1 0.54 0.8 1 100 100 0.6 nA

Gate-source leakage current

VGS =20V, VDS=0V

IGSS RDS(on) RG

Drain-source on-state resistance

VGS =10V, ID=4.6A, Tj =25C

Gate input resistance f = 1 MHz, open drain

Page 2

2002-08-12

Final data

SPP07N60C2, SPB07N60C2 SPA07N60C2

Electrical Characteristics Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =350V, ID =7.3A, VGS =0 to 10V VDD =350V, ID =7.3A

Symbol

Conditions min.

Values typ. 4 970 370 10 30 55 11 33 47 9

7.5 16.5 27 8

Unit max. 70 13.5

35 V nC

gfs Ciss Coss Crss

VDS 2*ID *RDS(on)max, ID =4.6A VGS =0V, VDS =25V, f=1MHz

S pF

Effective output capacitance, 4) Co(er)

VGS =0V, VDS =0V to 480V

td(on) tr td(off) tf

VDD =380V, VGS =0/13V, ID =7.3A, RG=12, Tj=125C

ns

V(plateau) VDD =350V, ID =7.3A

1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P

AV =EAR*f.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V
o(er) oss DS

DSS .

5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .

Page 3

2002-08-12

Final data

SPP07N60C2, SPB07N60C2 SPA07N60C2

Electrical Characteristics Parameter Characteristics Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt
Tj=25C VGS =0V, IF=IS VR =350V, IF =IS , diF /dt=100A/s

Symbol

Conditions min.

Values typ. 1 750 4.9 18 550 max. 7.3 14.6 1.2 1275 -

Unit

IS ISM

TC=25C

V ns C A A/s

Typical Transient Thermal Characteristics Symbol SPP_B Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.024 0.052 0.065 0.172 0.208 0.076 Value SPA 0.024 0.047 0.065 0.177 0.457 2.516 K/W Cth1 Cth2 Cth3 Cth4 Cth5 Cth6
R th,n T case

Unit

Symbol

Value SPP_B 0.0001354 0.0004561 0.0007717 0.001013 0.00738 0.068 SPA 0.00012 0.000455 0.000638 0.00144 0.00737 0.412

Unit Ws/K

Tj P tot (t)

R th1

E xternal H eatsink

C th1

C th2

C th,n T am b

Page 4

2002-08-12

Final data

SPP07N60C2, SPB07N60C2 SPA07N60C2

1 Power dissipation Ptot = f (TC )

100
SPP07N60C2

2 Power dissiaption FullPAK Ptot = f (TC )

35

W
80 70 25

Ptot

60 50 40 30 20

P tot
20 15 10 5 20 40 60 80 100 120

10 0 0 0 0

160

20

40

60

80

100

120

TC

C 150 TC

3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC =25C

10
2

4 Safe operating area FullPAK ID = f (VDS ) parameter: D = 0, TC = 25C

10 2

10 1

10 1

ID

10 0

ID
10 0

10 -1

tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

10 -1

tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

10 -2 0 10

10

10

10 V VDS

10 -2 0 10

10

10

10 V VDS

Page 5

2002-08-12

Final data

SPP07N60C2, SPB07N60C2 SPA07N60C2

5 Transient thermal impedance ZthJC = f (tp ) parameter: D = tp/T

10 1

6 Transient thermal impedance FullPAK ZthJC = f (tp ) parameter: D = tp/t

10 1

K/W

K/W

10 0

10 0

ZthJC

10 -1

ZthJC
10 -1

10 -2

D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

10 -2

D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10

1 s 10

10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10

1 s 10

tp

tp

7 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 10 s, VGS

25

8 Typ. output characteristic ID = f (VDS ); Tj=150C parameter: tp = 10 s, VGS

12

20V

A
12V

20V 12V 10V

9V

ID

15

10V 8V

ID

8.5V

6
9V

10 4
8V

7.5V

7V

5 2
7V

6.5V 6V

0 0

10

15

V VDS

25

0 0

10

15

V VDS

25

Page 6

2002-08-12

Final data

SPP07N60C2, SPB07N60C2 SPA07N60C2

9 Typ. drain-source on resistance RDS(on) =f(ID ) parameter: Tj =150C, VGS

3

10 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 4.6 A, VGS = 10 V

3.4
SPP07N60C2

2.8

RDS(on)
2

RDS(on)

2.4

2 1.6

1.5

1 0

20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V

2 4 6 8 10

1.2 98% typ 0.4

0.8

A ID

14

0 -60

-20

20

60

100

180

Tj

11 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s

24

12 Typ. gate charge VGS = f (QGate) parameter: ID = 7.3 A pulsed

16
SPP07N60C2

A
V
20 18 12 0,2 VDS max

ID

16 14 12 10

V GS

0,8 VDS max

25 C 150 C

10

6 8 6 4 2 2 0 0 4 8 12 4

20

0 0

12

16

20

24

28

32 nC 38

VGS

QGate
Page 7

2002-08-12

Final data

SPP07N60C2, SPB07N60C2 SPA07N60C2

13 Forward characteristics of body diode IF = f (VSD ) parameter: Tj , tp = 10 s

10 2
SPP07N60C2

14 Typ. switching time t = f (ID), inductive load, Tj =125C par.: VDS=380V, VGS=0/+13V, RG =12
10 3

ns
tr

10

10

IF

td(off)

10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0

t
10 1
tf

td(on)

0.4

0.8

1.2

1.6

2.4 V

10 0 0

10

12

14

VSD

A 18 ID

15 Typ. switching time t = f (RG), inductive load, Tj =125C par.: VDS=380V, VGS=0/+13V, ID=7.3 A
10
3

16 Typ. switching losses1) E = f (ID ), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, RG =12
0.4
*) Eon includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different 0.3 under other operating conditions. Eon*

ns

mWs
td(off) td(on)

10 2
tr

E
tf

0.25

0.2

10 1

0.15
Eoff

0.1

0.05 10 0 0

20

40

60

80

100

RG

140

0 0

10

12

16 A ID

Page 8

2002-08-12

Final data

SPP07N60C2, SPB07N60C2 SPA07N60C2

17 Typ. switching losses1) E = f(RG ), inductive load, Tj =125C par.: VDS=380V, VGS=0/+13V,ID =7.3A
0.3
*) E on includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different under other operating conditions.

18 Avalanche SOA IAR = f (tAR ) par.: Tj 150 C

8

mWs

IAR
E on*

0.2

5
Tj (START) =25C

0.15
Eoff

3 0.1 2 0.05 1
Tj (START) =125C

0 0

20

40

60

80

RG

120

0 -3 10

10

-2

10

-1

10

10

10

4 s 10 tAR

19 Avalanche energy EAS = f (Tj ) par.: ID = 5.5 A, VDD = 50 V

260

20 Drain-source breakdown voltage V(BR)DSS = f (Tj )

SPP07N60C2

720

mJ V
220 200

V (BR)DSS
C

680 660 640 620 600 580 560

E AS

180 160 140 120 100 80 60 40 20 0 20 40 60 80 100 120 160

540 -60

-20

20

60

100

180

Tj
Page 9

Tj

2002-08-12

Final data

SPP07N60C2, SPB07N60C2 SPA07N60C2

21 Avalanche power losses PAR = f (f ) parameter: EAR =0.5mJ

300

22 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz

10 4

pF W
Ciss

10 3

P AR

200

C
150 10 2
Coss

100 10 1 50
Crss

0 4 10

10

Hz f

10

10 0 0

100

200

300

400

600

VDS

23 Typ. Coss stored energy Eoss=f(VDS )

5.5

J
4.5 4

E oss

3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400

600

VDS

Page 10

2002-08-12

Final data

SPP07N60C2, SPB07N60C2 SPA07N60C2

Definition of diodes switching characteristics

Page 11

2002-08-12

Final data

SPP07N60C2, SPB07N60C2 SPA07N60C2

P-TO-220-3-1
B 10 0.4 3.7 0.2 A 1.270.13 4.44

15.38 0.6

2.8 0.2

5.23 0.9

13.5 0.5

3x 0.75 0.1 1.17 0.22 2x 2.54 0.25

M

0.5 0.1 2.510.2

A B C

All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3

P-TO-263-3-1 (D2-PAK)
4.4 10 0.2 0...0.3 8.5 1) A 1.27 0.1 B 0.1 2.4

1 0.3

0.05

(15)

9.25 0.2

7.55 1)

0...0.15 0.75 0.1 1.05 2.54 5.08

1)

4.7 0.5

2.7 0.3

0.5 0.1
8 MAX.

0.25

A B

0.1 B

Typical All metal surfaces: tin plated, except area of cut. Metal surface min. x=7.25, y=6.9

9.98 0.48

0.05

Page 12

2002-08-12

Final data

SPP07N60C2, SPB07N60C2 SPA07N60C2

P-TO-220-3-31 (FullPAK)

10.5 0.005 6.1 0.002 1.5 0.001 4.7 0.005 2.7 0.005
7 15.99 0.005 14.1 0.005 12.79 0.005

9.68 0.005
1 2 3

1.28 +0.003 -0.002 0.7 +0.003 -0.002 2.54 2.57 0.002

13.6 0.005

0.5 +0.005 -0.002

Please refer to mounting instructions (application note AN-TO220-3-31-01)

3.3 0.005

Page 13

2002-08-12

Final data
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Mnchen Infineon Technologies AG 1999 All Rights Reserved.

SPP07N60C2, SPB07N60C2 SPA07N60C2

Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Page 14

2002-08-12