Distributed Components

Di stri buted Components
May 2007
ii
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iii
Contents
1 Finline Components
Finline Model Basis .................................................................................................. 1-1
BFINL (Bilateral Finline) ........................................................................................... 1-2
BFINLT (Bilateral Finline Termination) ...................................................................... 1-4
FSUB (Finline Substrate).......................................................................................... 1-6
IFINL (Insulated Finline) ........................................................................................... 1-8
IFINLT (Insulated Finline Termination)...................................................................... 1-10
UFINL (Unilateral Finline) ......................................................................................... 1-12
UFINLT (Unilateral Finline Termination) ................................................................... 1-14
2 Microstrip Components
MACLIN (Microstrip Asymmetric Coupled Lines) ..................................................... 2-2
MACLIN3 (Microstrip 3-Conductor Asymmetric Coupled Lines) .............................. 2-5
MBEND (Microstrip Bend (Arbitrary Angle/Miter)) .................................................... 2-8
MBEND2 (90-degree Microstrip Bend (Mitered)) ..................................................... 2-11
MBEND3 (90-degree Microstrip Bend (Optimally Mitered)) ..................................... 2-13
MBSTUB (Microstrip Butterfly Stub) ......................................................................... 2-15
MCFIL (Microstrip Coupled-Line Filter Section) ....................................................... 2-17
MCLIN (Microstrip Coupled Lines) ........................................................................... 2-20
MCORN (90-degree Microstrip Bend (Unmitered)) .................................................. 2-22
MCROS (Microstrip Cross-Junction) ........................................................................ 2-24
MCROSO (Alternate Libra Microstrip Cross-Junction) ............................................. 2-26
MCURVE (Microstrip Curved Bend) ......................................................................... 2-29
MCURVE2 (Microstrip Curved Bend) ....................................................................... 2-31
MEANDER (Meander Line) ...................................................................................... 2-33
MGAP (Microstrip Gap) ............................................................................................ 2-35
MICAP1 (Microstrip Interdigital Capacitor (2-port)) .................................................. 2-37
MICAP4 (Microstrip Interdigital Capacitor (Grounded 2-port)).................................. 2-46
MLANG (Microstrip Lange Coupler) ......................................................................... 2-49
MLANG6 (Microstrip Lange Coupler (6-Fingered)) .................................................. 2-52
MLANG8 (Microstrip Lange Coupler (8-Fingered)) .................................................. 2-55
MLEF (Microstrip Line Open-End Effect).................................................................. 2-58
MLIN (Microstrip Line) .............................................................................................. 2-60
MLOC (Microstrip Open-Circuited Stub)................................................................... 2-63
MLSC (Microstrip Short-Circuited Stub) ................................................................... 2-66
MRIND (Microstrip Rectangular Inductor) ................................................................ 2-69
MRINDELA (Elevated Microstrip Rectangular Inductor)........................................... 2-72
MRINDELM (Elevated Microstrip Rectangular Inductor (3-Layer Substrate)) .......... 2-76
iv
MRINDNBR (Microstrip Rectangular Inductor (No Bridge)) ..................................... 2-81
MRINDSBR (Microstrip Rectangular Inductor (Strip Bridge, 3-Layer Substrate)) .... 2-84
MRINDWBR (Microstrip Rectangular Inductor (Wire Bridge)) .................................. 2-88
MRSTUB (Microstrip Radial Stub) ............................................................................ 2-92
MSABND_MDS (Arbitrary Angled/Chamfer Bend)................................................... 2-94
MSIND (Microstrip Round Spiral Inductor) ............................................................... 2-96
MSLIT (Microstrip Slit) .............................................................................................. 2-98
MSOBND_MDS (Optimally Chamfered Bend (90-degree)) ..................................... 2-101
MSOP (Microstrip Symmetric Pair of Open Stubs)................................................... 2-103
MSSPLC_MDS (MDS Microstrip Center-Fed Rectangular Spiral Inductor) ............. 2-105
MSSPLR_MDS (MDS Microstrip Round Spiral Inductor) ......................................... 2-107
MSSPLS_MDS (MDS Microstrip Side-Fed Rectangular Spiral Inductor) ................. 2-109
MSTEP (Microstrip Step in Width) ............................................................................ 2-111
MSUB (Microstrip Substrate).................................................................................... 2-114
MSUBST3 (Microstrip 3-Layer Substrate) ................................................................ 2-118
MTAPER (Microstrip Width Taper)............................................................................ 2-120
MTEE (Microstrip T-Junction) ................................................................................... 2-122
MTEE_ADS (Libra Microstrip T-Junction)................................................................. 2-124
MTFC (Microstrip Thin Film Capacitor) .................................................................... 2-127
RIBBON (Ribbon) ..................................................................................................... 2-130
TFC (Thin Film Capacitor) ........................................................................................ 2-132
TFR (Thin Film Resistor) .......................................................................................... 2-135
VIA (Tapered Via Hole in Microstrip) ........................................................................ 2-137
VIA2 (Cylindrical Via Hole in Microstrip)................................................................... 2-139
VIAGND (Cylindrical Via Hole to Ground in Microstrip) ............................................ 2-142
VIAFC (Via with Full-Circular Pads) ......................................................................... 2-145
VIAHS (Via with Half-Square Pads) ......................................................................... 2-147
VIAQC (Via with Quasi-Circular Pads) ..................................................................... 2-149
VIASC (Via with Semi-Circular Pads) ....................................................................... 2-151
VIASTD (Via with Smooth Tear Drop Pads) ............................................................. 2-153
VIATTD (Libra Via Hole in Microstrip with Tear Drop Pads) ..................................... 2-155
WIRE (Round Wire).................................................................................................. 2-157
3 Multilayer Interconnects
Introduction............................................................................................................... 3-1
COMBINE2ML (Combine 2 Coupled-Line Components) ......................................... 3-2
ML1CTL_C to ML8CTL_C, ML16CTL_C (Coupled Lines, Constant Width and Spacing)3-10
ML2CTL_V to ML10CTL_V (Coupled Lines, Variable Width and Spacing) .............. 3-13
MLACRNR1 (190-degree Corner, Changing Width)................................................. 3-16
v
MLACRNR2 to MLACRNR8, MLACRNR16 (Coupled 90-deg Corners, Changing Pitch)3-17
MLCLE (Via Clearance)............................................................................................ 3-19
MLCRNR1 to MLCRNR8, MLCRNR16 (Coupled Angled Corners, Constant Pitch) 3-22
MLCROSSOVER1 to MLCROSSOVER8 (1 to 8 Crossovers) ................................. 3-24
MLJCROSS (Cross Junction)................................................................................... 3-26
MLJGAP (Open Gap) ............................................................................................... 3-27
MLJTEE (Tee Junction) ............................................................................................ 3-28
MLOPENSTUB (Open Stub) .................................................................................... 3-30
MLRADIAL1 to MLRADIAL5 (Radial Line, Coupled Radial Lines) ........................... 3-31
MLSLANTED1 to MLSLANTED8, MLSLANTED16
(Slanted Line, Slanted Coupled Lines) .................................................................. 3-33
MLSUBSTRATE2 to MLSUBSTRATE10, MLSUBSTRATE12, MLSUBSTRATE14,
MLSUBSTRATE16, MLSUBSTRATE32, MLSUBSTRATE40 (Dielectric Constant for N
Layers) ................................................................................................................... 3-35
MLVIAHOLE (Via Hole) ............................................................................................ 3-39
MLVIAPAD (Via Pad) ................................................................................................ 3-42
4 Passive RF Circuit Components
AIRIND1 (Aircore Inductor (Wire Diameter)) ............................................................ 4-2
AIRIND2 (Aircore Inductor (Wire Gauge)) ................................................................ 4-4
BALUN1 (Balanced-to-Unbalanced Transformer (Ferrite Core)).............................. 4-6
BALUN2 (Balanced-to-Unbalanced Transformer (Ferrite Sleeve)) .......................... 4-8
BONDW_Shape (Philips/TU Delft Bondwire Parameterized Shape)........................ 4-10
BONDW_Usershape (Philips/TU Delft Bondwire Model with User-Defined Shape). 4-14
BONDW1 to BONDW50 (Philips/TU Delft Bondwires Model) .................................. 4-15
CIND2 (Lossy Toroidal Inductor) .............................................................................. 4-29
HYBCOMB1 (Hybrid Combiner (Ferrite Core)) ........................................................ 4-31
HYBCOMB2 (Hybrid Combiner (Ferrite Sleeve)) ..................................................... 4-34
MUC2 (Two Coupled Resistive Coils) ...................................................................... 4-37
MUC3 (Three Coupled Resistive Coils).................................................................... 4-39
MUC4 (Four Coupled Resistive Coils)...................................................................... 4-41
MUC5 (Five Coupled Resistive Coils) ...................................................................... 4-43
MUC6 (Six Coupled Resistive Coils) ........................................................................ 4-45
MUC7 (Seven Coupled Resistive Coils)................................................................... 4-47
MUC8 (Eight Coupled Resistive Coils)..................................................................... 4-50
MUC9 (Nine Coupled Resistive Coils)...................................................................... 4-53
MUC10 (Ten Coupled Resistive Coils) ..................................................................... 4-56
SAGELIN (Sage Laboratories WIRELINE)............................................................... 4-60
SAGEPAC (Sage Laboratories WIREPAC) .............................................................. 4-61
TAPIND1 (Tapped Aircore Inductor (Wire Diameter))............................................... 4-62
TAPIND2 (Tapped Aircore Inductor (Wire Gauge)) .................................................. 4-64
X9TO1COR (9:1 Transformer with Ferrite Core)...................................................... 4-66
vi
X9TO4COR (9:4 Transformer with Ferrite Core)...................................................... 4-68
X9TO1SLV (9:1 Transformer with Ferrite Sleeve) .................................................... 4-70
X9TO4SLV (9:4 Transformer with Ferrite Sleeve) .................................................... 4-72
XFERTL1 (Transmission Line Transformer (Ferrite Core)) ...................................... 4-74
XFERTL2 (Transmission Line Transformer (Ferrite Sleeve)) ................................... 4-77
XTAL1 (Piezoelectric Crystal with Holder) ................................................................ 4-80
XTAL2 (Piezoelectric Crystal with Holder) ................................................................ 4-82
5 Stripline Components
SBCLIN (Broadside-Coupled Lines in Stripline) ....................................................... 5-2
SBEND (Unmitered Stripline Bend) .......................................................................... 5-5
SBEND2 (Stripline Bend -- Arbitrary Angle/Miter) .................................................... 5-7
SCLIN (Edge-Coupled Lines in Stripline) ................................................................. 5-10
SCROS (Stripline Cross Junction)............................................................................ 5-13
SCURVE (Curved Line in Stripline) .......................................................................... 5-16
SLEF (Stripline Open-End Effect)............................................................................. 5-18
SLIN (Stripline) ......................................................................................................... 5-20
SLINO (Offset Strip Transmission Line).................................................................... 5-23
SLOC (Stripline Open-Circuited Stub) ...................................................................... 5-26
SLSC (Stripline Short-Circuited Stub)....................................................................... 5-29
SMITER (90-degree Stripline Bend -- Optimally Mitered)......................................... 5-32
SOCLIN (Offset-Coupled Lines in Stripline) ............................................................. 5-35
SSTEP (Stripline Step in Width) ............................................................................... 5-38
SSUB (Stripline Substrate) ....................................................................................... 5-40
SSUBO (Offset Stripline Substrate).......................................................................... 5-42
STEE (Stripline T-Junction) ...................................................................................... 5-44
6 Suspended Substrate Components
SSCLIN (Suspended Substrate Coupled Lines)....................................................... 6-2
SSLIN (Suspended Substrate Line) ......................................................................... 6-4
SSSUB (Suspended Substrate) ............................................................................... 6-6
7 Waveguide Components
CPW (Coplanar Waveguide) .................................................................................... 7-2
CPWCGAP (Coplanar Waveguide, Center-Conductor Gap).................................... 7-4
CPWCPL2 (Coplanar Waveguide Coupler (2 Center Conductors)) ......................... 7-6
CPWCPL4 (Coplanar Waveguide Coupler (4 Center Conductors)) ......................... 7-8
CPWEF (Coplanar Waveguide, Open-End Effect) ................................................... 7-10
CPWEGAP (Coplanar Waveguide, End Gap) .......................................................... 7-12
CPWG (Coplanar Waveguide with Lower Ground Plane) ........................................ 7-14
CPWOC (Coplanar Waveguide, Open-Circuited Stub) ............................................ 7-16
CPWSC (Coplanar Waveguide, Short-Circuited Stub) ............................................. 7-18
CPWSUB (Coplanar Waveguide Substrate)............................................................. 7-20
vii
RWG (Rectangular Waveguide) ............................................................................... 7-21
RWGINDF (Rectangular Waveguide Inductive Fin) ................................................. 7-23
RWGT (Rectangular Waveguide Termination).......................................................... 7-25
8 Transmission Line Components
CLIN (Ideal Coupled Transmission Lines) ................................................................ 8-2
CLINP (Lossy Coupled Transmission Lines) ............................................................ 8-3
COAX (Coaxial Cable).............................................................................................. 8-6
COAX_MDS (Coaxial Cable).................................................................................... 8-8
CoaxTee (Coaxial 3-Port T-Junction, Ideal, Lossless).............................................. 8-10
DR (Cylindrical Dielectric Resonator Coupled Transmission Line Section).............. 8-11
ETAPER_MDS (Ideal Exponential Tapered Line)..................................................... 8-13
RCLIN (Distributed R-C Network)............................................................................. 8-15
TLIN (Ideal 2-Terminal Transmission Line)............................................................... 8-16
TLIN4 (Ideal 4-Terminal Transmission Line)............................................................. 8-17
TLINP (2-Terminal Physical Transmission Line)....................................................... 8-18
TLINP4 (4-Terminal Physical Transmission Line)..................................................... 8-20
TLOC (Ideal Transmission Line Open-Circuited Stub) ............................................. 8-22
TLPOC (Physical Transmission Line Open-Circuited Stub) ..................................... 8-23
TLPSC (Physical Transmission Line Short-Circuited Stub) ...................................... 8-25
TLSC (Ideal Transmission Line Short-Circuited Stub) .............................................. 8-27
9 Printed Circuit Board Components
PCB Model Basis and Limits .................................................................................... 9-1
PCBEND (PCB Bend (Arbitrary Angle/Miter)) .......................................................... 9-3
PCCORN (Printed Circuit Corner) ............................................................................ 9-5
PCCROS (Printed Circuit Cross-Junction) ............................................................... 9-7
PCCURVE (PCB Curve)........................................................................................... 9-9
PCILC (Printed Circuit Inter-layer Connection)......................................................... 9-11
PCLIN1 (1 Printed Circuit Line) ................................................................................ 9-13
PCLIN2 (2 Printed Circuit Coupled Lines) ................................................................ 9-15
PCLIN10 (10 Printed Circuit Coupled Lines) ............................................................ 9-38
PCSTEP (PCB Symmetric Steps) ............................................................................ 9-42
PCSUB1 (1-Layer Printed Circuit Substrate)............................................................ 9-44
viii
PCTAPER (PC Tapered Line)................................................................................... 9-58
PCTEE (Printed Circuit T-Junction) .......................................................................... 9-60
PCTRACE (Single PCB Line (Trace)) ...................................................................... 9-62
Index
Finline Model Basis 1-1
Chapter 1: Finline Components
Finline Model Basis
For each fi nl i ne component, the model i s a rectangul ar wavegui de wi th the cutoff
frequency and the di el ectri c constant at cutoff modi fi ed by the di el ectri c sl ab and
conducti ng stri p. Conductor and di el ectri c l osses are not i ncl uded.
Spectral domai n numeri cal resul ts provi de the basi s for unilateral and bilateral
fi nl i nes. The quoted accuracy, wi th respect to spectral domai n, are 0.6 percent for
equi val ent di el ectri c constant at cutoff and cutoff wavel ength for uni l ateral fi nl i ne
and 0.1 percent for phase vel oci ty of bi l ateral fi nl i ne. The equati ons for insulated
fi nl i nes are anal yti cal curve-fi ts to numeri cal resul ts of transmi ssi on l i ne matri x
anal ysi s (TLM). The ci ted accuracy for equi val ent di el ectri c constant and cutoff
frequency i s 0.6 percent compared to the TLM resul ts. Al l accuraci es are for
parameter val ues wi thi n the range of usage.
1-2 BFINL (Bilateral Finline)
Finline Components
BFINL (Bilateral Finline)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
where
D = gap wi dth
A = i nsi de encl osure wi dth (from associ ated FSUB)
B = i nsi de encl osure hei ght (from associ ated FSUB)
S = thi ckness of substrate (from associ ated FSUB)
Notes/Equations
1. Refer to Fi nl i ne Model Basi s on page 1-1.
2. For ti me-domai n anal ysi s, the frequency-domai n anal yti cal model i s used.
3. Thi s component has no defaul t artwork associ ated wi th i t.
Name Description Units Default
Subst Substrate instance name None FSub1
D Width of gap mil 20.0
L Length of finline mil 1000.0
Temp Physical temperature (see Notes) C None
D
Metal
Dielectric
B
32
------ D B
A
64
------ S
A
8
----
BFINL (Bilateral Finline) 1-3
4. The "Temp" parameter i s onl y used i n noi se cal cul ati ons.
5. For noi se to be generated, the transmi ssi on l i ne must be l ossy (l oss generates
thermal noi se).
References
[1] P. Pramani ck and P. Bharti a, Accurate Anal ysi s Equati ons and Synthesi s
Techni que for Uni l ateral Fi nl i nes, I EEE Transactions on Microwave Theory
and Techniques, Vol . MTT-33, No. 1, pp. 24-30, Jan. 1985.
[2] P. Pramani ck and P. Bharti a, Si mpl e Formul ae for Di spersi on i n Bi l ateral
Fi n-Li nes, AEU, Vol . 39, No. 6, pp. 383-386, 1985.
[3] P. Pramani ck and P. Bharti a, Accurate Anal ysi s and Synthesi s Equati ons for
I nsul ated Fi n-Li nes, AEU, Vol . 39, No. 1, pp. 31-36, 1985.
1-4 BFINLT (Bilateral Finline Termination)
Finline Components
BFINLT (Bilateral Finline Termination)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
where
D = gap wi dth
Notes/Equations
1. Refer to Fi nl i ne Model Basi s on page 1-1.
D
Metal
Dielectric
B
32
------ D B
A
64
----- - S
A
8
----
BFINLT (Bilateral Finline Termination) 1-5
thermal noi se).
References
1-6 FSUB (Finline Substrate)
Finline Components
FSUB (Finline Substrate)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Er 1.0
Fdw > 0
Fa > 0
Fb > 0
Cond 0
Notes/Equations
1. Refer to the secti on Fi nl i ne Model Basi s on page 1-1.
2. FSUB i s requi red for al l fi nl i ne components.
Er Substrate dielectric constant None 2.2
Fdw Thickness of slab mil 62.5
Fa Inside width of enclosure mil 900.0
Fb Inside height of enclosure mil 400.0
Cond Conductor conductivity S/meter 1.0e+50
Fb
Er
Dielectric
Metal
Fdw
Fa
FSUB (Finline Substrate) 1-7
References
1-8 IFINL (Insulated Finline)
Finline Components
IFINL (Insulated Finline)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
where
D = gap wi dth
Notes/Equations
D
Metal Dielectric
B
32
------ D B
A
64
----- - S
A
4
----
IFINL (Insulated Finline) 1-9
thermal noi se).
References
and Techniques, Vol . MTT-33, No. 1, pp. 24-30, January 1985.
[2] P. Pramani ck, and P. Bharti a, Si mpl e Formul ae for Di spersi on i n Bi l ateral
1-10 IFINLT (Insulated Finline Termination)
Finline Components
IFINLT (Insulated Finline Termination)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
where
D = gap wi dth
Notes/Equations
D
Metal Dielectric
B
32
------ D B
A
64
----- - S
A
4
----
IFINLT (Insulated Finline Termination) 1-11
thermal noi se).
References
1-12 UFINL (Unilateral Finline)
Finline Components
UFINL (Unilateral Finline)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
where
D = gap wi dth
Notes/Equations
D
Metal Dielectric
B
32
------ D B
A
64
----- - S
A
4
----
UFINL (Unilateral Finline) 1-13
thermal noi se).
References
1-14 UFINLT (Unilateral Finline Termination)
Finline Components
UFINLT (Unilateral Finline Termination)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
where
D = gap wi dth
Notes/Equations
D
Metal
Dielectric
B
32
------ D B
A
64
----- - S
A
4
----
UFINLT (Unilateral Finline Termination) 1-15
thermal noi se).
References
1-16 UFINLT (Unilateral Finline Termination)
Finline Components
2-1
Chapter 2: Microstrip Components
2-2 MACLIN (Microstrip Asymmetric Coupled Lines)
Microstrip Components
MACLIN (Microstrip Asymmetric Coupled Lines)
Symbol
Illustration
Available in ADS and RFDE
Parameters
Range of Usage
1 Er 18
T 0
0.01 H W1 100.0 H
0.01 H W2 100.0 H
0.1 H S 10.0 H
Er = di el ectri c constant (from associ ated Subst)
Subst Substrate instance name None MSub1
W1 Width of conductor 1 mil 25.0
S Conductor spacing mil 5.0
L Conductor length mil 100.0
WA (for Layout option) Width of line that connects to pin 1 mil 0.0
WB (for Layout option) Width of line that connects to pin 2 mil 0.0
WC (for Layout option) Width of line that connects to pin 3 mil 0.0
WD (for Layout option) Width of line that connects to pin 4 mil 0.0
MACLIN (Microstrip Asymmetric Coupled Lines) 2-3
H = substrate thi ckness (from associ ated Subst)
T = conductor thi ckness (from associ ated Subst)
Si mul ati on frequency (GHz)
W1 > 0, W2 > 0, S > 0, L > 0 for l ayout
WA 0, WB 0, WC 0, WD 0
Notes/Equations
1. The frequency-domai n anal yti cal model i s a di stri buted, coupl ed-l i ne model .
The even- and odd-mode characteri sti cs of the mi crostri p l i nes are cal cul ated
usi ng the formul a devel oped by Ki rschni ng and Jansen for paral l el coupl ed
mi crostri p l i nes, and the formul a devel oped by Hammerstad and Jensen for
si ngl e mi crostri p l i ne. Di spersi on of the effecti ve di el ectri c constant i s i ncl uded.
The per-uni t-l ength coupl i ng capaci tances are then deri ved for the asymmetri c
case usi ng a model devel oped for Agi l ent by Vi jai Tri pathi . The even- and
odd-mode i mpedance and admi ttance matri ces are cal cul ated based on the
coupl i ng capaci tances. The resul t i s used to cal cul ate the network parameters of
the di stri buted, coupl ed-l i ne model by Tri pathi 's method. Conductor l osses are
i gnored.
2. The Temp parameter i s onl y used i n noi se cal cul ati ons.
thermal noi se).
4. To turn off noi se contri buti on, set Temp to 273.15C.
5. For ti me-domai n anal ysi s, an i mpul se response obtai ned from the
frequency-domai n anal yti cal model i s used.
6. I n generati ng a l ayout, adjacent transmi ssi on l i nes wi l l be l i ned up wi th the
i nner edges of the conductor stri ps; i f the connecti ng transmi ssi on l i nes are
narrower than the coupl ed l i nes, they wi l l be centered on the conductor stri ps.
References
[1] V. K. Tri pathi , Asymmetri c Coupl ed Transmi ssi on Li nes i n an I nhomogeneous
Medi um, MTT-23, September 1975.
[2] V. K. Tri pathi and Y. K. Chi n. Anal ysi s of the General Nonsymmetri cal
Di recti onal Coupl er wi th Arbi trary Termi nati ons, Proceedings of the I EEE, Vol .
129, December 1982, p. 360.
25
H mm ( )
---------------------
2-4 MACLIN (Microstrip Asymmetric Coupled Lines)
[3] M. Ki rschni ng and R. H. Jansen. Accurate Wi de-Range Desi gn Equati ons for
the Frequency-Dependent Characteri sti c of Paral l el Coupl ed Mi crostri p Li nes,
MTT-32, January 1984 (wi th correcti ons by Agi l ent).
[4] E. Hammerstad and O. Jensen. Accurate Model s for Mi crostri p
Computer-Ai ded Desi gn, MTT Symposium Digest, 1980, pp. 407-409.
MACLIN3 (Microstrip 3-Conductor Asymmetric Coupled Lines) 2-5
MACLIN3 (Microstrip 3-Conductor Asymmetric Coupled Lines)
Symbol
Illustration
Parameters
S1 Spacing between conductors 1 and 2 mil 8.0
S2 Spacing between conductors 2 and 3 mil 12.0
WA (for Layout option) Width of line that connects to pin 1 mil 0.0
WC (for Layout option) Width of line that connects to pin 3 mil 0.0
WD (for Layout option) Width of line that connects to pin 4 mil 0.0
2-6 MACLIN3 (Microstrip 3-Conductor Asymmetric Coupled Lines)
Range of Usage
0.01 H W1 100.0 H
0.01 H W2 100.0 H
0.01 H W3 100.0 H
0.1 H S1 10.0 H
0.1 H S2 10.0 H
1.01 Er 18
T 0
where
W1 > 0, W2 > 0, W3 > 0, S1 > 0, S2 > 0, L > 0 for l ayout
WA 0, WB 0, WC 0, WD 0
Notes/Equations
The even- and odd-mode characteri sti cs of the mi crostri p l i nes are cal cul ated
usi ng the formul a devel oped by Ki rschni ng and Jansen for paral l el coupl ed
mi crostri p l i nes, and the formul a devel oped by Hammerstad and Jensen for
si ngl e mi crostri p l i ne. The per-uni t-l ength coupl i ng capaci tances are then
deri ved for the asymmetri c case usi ng a model devel oped for Agi l ent by Vi jai
Tri pathi . The even- and odd-mode i mpedance and admi ttance matri ces are
cal cul ated based on the coupl i ng capaci tances. The resul t i s used to cal cul ate
the network parameters of the di stri buted, coupl ed-l i ne model by Tri pathi 's
method. Conductor l oss and di spersi on are i gnored.
thermal noi se).
5. I n generati ng a l ayout, adjacent transmi ssi on l i nes wi l l be l i ned up wi th i nner
edges of the conductor stri ps at pi ns 1, 3, 4 and 6. I f the connecti ng
transmi ssi on l i nes are narrower than the coupl ed l i nes, they wi l l be centered on
25
H mm ( )
---------------------
MACLIN3 (Microstrip 3-Conductor Asymmetric Coupled Lines) 2-7
the conductor stri ps. At pi ns 2 and 5, the assumpti on i s that the abutti ng
transmi ssi on l i nes are narrower or the same wi dth as the center coupl ed l i ne.
References
[1] V. K. Tri pathi On the Anal ysi s of Symmetri cal Three-Li ne Mi crostri p Ci rcui ts,
MTT-25, September 1977.
2-8 MBEND (Microstrip Bend (Arbitrary Angle/Miter))
MBEND (Microstrip Bend (Arbitrary Angle/Miter))
Symbol
Illustration
Parameters
Subst Microstrip substrate name None
W Conductor width mil
Angle Angle of bend deg
M Miter fraction (M=X/D)
Temp Physical temperature C
MBEND (Microstrip Bend (Arbitrary Angle/Miter)) 2-9
Range of Usage
1 Er 128
90 Angl e 90
where
W 0 for l ayout
Angl e = any val ue for l ayout
Notes/Equations
1. The MBEND model i s not the preferred bend model . I t has been kept i n ADS for
forward compati bi l i ty reasons. The MBEND model i s suscepti bl e to probl ems
when ti me domai n si mul ati ons, l i ke Transi ent, are run. Pl ease use the
MSABND_MDS model for your new desi gns.
2. For the unmi tered, 90 condi ti on, the frequency-domai n anal yti cal model i s the
l umped component, ri ght-angl e bend model proposed by Gupta et al . Otherwi se,
the l umped component model proposed by Jansen i s used. The Hammerstad
and Jensen mi crostri p formul as are used to cal cul ate reference pl ane shi fts i n
the Jansen model . Di spersi on and conductor l oss are not i ncl uded i n the model .
3. For ri ght-angl e bends, use MBEND2, MBEND3, or MCORN.
4. Two possi bl e reference pl ane l ocati ons are avai l abl e:
Smal l mi ters where the reference pl anes l i ne up wi th the i nner corner of the
bend, or
Large mi ters where the reference pl anes l i ne up wi th the corner between the
connecti ng stri p and the mi tered secti on
thermal noi se).
8. I n l ayout, a posi ti ve val ue for Angl e draws a bend i n the countercl ockwi se
di recti on from pi n 1 to 2; a negati ve val ue for Angl e draws a bend i n the
cl ockwi se di recti on.
0.01
W
H
----- 100
2-10 MBEND (Microstrip Bend (Arbitrary Angle/Miter))
References
[1] M. Ki rschni ng, R. H. Jansen, and N. H. L. Koster. Measurement and
Computer-Ai ded Model i ng of Mi crostri p Di sconti nui ti es by an I mproved
Resonator Method, 1983 I EEE MTT-S I nternational Microwave Symposium
Digest, May 1983, pp. 495-497.
[2] R. H. Jansen, Probl eme des Entwarfs und der Messtechni k von Pl anaren
Schal tungen, 1. Teil, NTZ, Vol 34, Jul y 1981, pp. 412-417.
[3] E. Hammerstad and O. Jensen, Accurate Model s for Mi crostri p
[4] K. C. Gupta, R. Garg, and R. Chadha, Computer-Aided Design of Microwave
Circuits, 1981, p. 195.
Equivalent Circuit
MBEND2 (90-degree Microstrip Bend (Mitered)) 2-11
MBEND2 (90-degree Microstrip Bend (Mitered))
Symbol
Illustration
Parameters
Range of Usage
0.2 6.0
2.36 Er 10.4
where
W 0 for l ayout
W
H
-----
12
H mm ( )
---------------------
2-12 MBEND2 (90-degree Microstrip Bend (Mitered))
Notes/Equations
1. The frequency-domai n model i s an empi ri cal l y-based anal yti cal model that
consi sts of a stati c, l umped, equi val ent ci rcui t. The equi val ent ci rcui t
parameters are cal cul ated based on the expressi ons devel oped by Ki rschni ng,
Jansen and Koster accordi ng to the fol l owi ng formul a.
pF/m
nH/m
thermal noi se).
References
Digest, May 1983, pp. 495-497.
Equivalent Circuit
C
H
---- -
W
H
----- 7.6
r
3.8
W
H
----- 3.93
r
0.62 + ( ) + + =
L
H
----- 441.2712 1 1.062 0.177
W
H
-----
\ .
| |
0.947
exp
)
`

=
L L
C
MBEND3 (90-degree Microstrip Bend (Optimally Mitered)) 2-13
MBEND3 (90-degree Microstrip Bend (Optimally Mitered))
Symbol
Illustration
Parameters
Range of Usage
2.5 Er 25
where
W 0 for l ayout
W
X
W
D
0.5
W
H
----- 2.75
15
H mm ( )
---------------------
2-14 MBEND3 (90-degree Microstrip Bend (Optimally Mitered))
Notes/Equations
1. The frequency-domai n model i s an empi ri cal l y based, anal yti cal model . The
opti mal chamfered bend di mensi ons are cal cul ated based on the expressi on
devel oped by Douvi l l e and James. The resul ti ng bend i s model ed as a matched
transmi ssi on l i ne of l ength, 2l
o
. Thi s l ength i s cal cul ated from curve fi ts to the
graphi cal data gi ven i n the references. I n addi ti on, di spersi on i s accounted for
i n the transmi ssi on l i ne model . Conductor l osses are i gnored.
2. Opti mum mi ter i s gi ven by:
where
H = substrate thi ckness
thermal noi se).
References
[1] . R. J. P. Douvi l l e and D. S. James, Experi mental Characteri zati on of
Mi crostri p Bends and Thei r Frequency Dependent Behavi or, 1973 I EEE
Conference Digest, October 1973, pp. 24-25.
[2] R. J. P. Douvi l l e and D. S. James, Experi mental Study of Symmetri c Mi crostri p
Bends and Thei r Compensati on, I EEE Transactions on Microwave Theory and
Techniques, Vol . MTT-26, March 1978, pp. 175-181.
[3] Rei nmut K. Hoffman, Handbook of Microwave I ntegrated Circuits, Artech
House, 1987, pp. 267-309.
Equivalent Circuit
X
D
---- 0.52 0.65 e
1.35 W H ( ) ( )
+ =
Z
0
Zlo
MBSTUB (Microstrip Butterfly Stub) 2-15
MBSTUB (Microstrip Butterfly Stub)
Symbol
Illustration
Parameters
W Width of feed line mil 25.0
Ro Outer radius of circular sector mil 60.0
Angle Angle subtended by circular sector deg 60
D Insertion depth of circular sector in feed line mil 3.0
Angle
2-16 MBSTUB (Microstrip Butterfly Stub)
Range of Usage
0.01 100
Ro >
Angl e < 90
where
Notes/Equations
1. The frequency-domai n anal yti cal model accounts for conductor and di el ectri c
l osses.
2. I t i s assumed that onl y TM
on
radi al modes are exci ted. Thi s requi res Angl e to
be l ess than 90 degrees.
thermal noi se).
References
[1] F. Gi anni ni , M. Ruggi eri , and J. Vrba, Shunt-Connected Mi crostri p Radi al
Stubs, I EEE Transaction, Microwave Theory and Techniques, Vol . MTT-34, No.
3, March 1986, pp. 363-366.
[2] F. Gi anni ni , R. Sorrenti no, and J. Vrba, Pl anar Ci rcui t Anal ysi s of Mi crostri p
Radi al Stub, I EEE Transaction, Microwave Theory and Techniques, Vol .
MTT-32, No. 12, December 1984, pp. 1652-1655.
W
H
-----
D
Angl e 2 ( ) cos
--------------------------------------
MCFIL (Microstrip Coupled-Line Filter Section) 2-17
MCFIL (Microstrip Coupled-Line Filter Section)
Symbol
Illustration
Parameters
Range of Usage
W Line width mil 25.0
S Spacing between lines mil 10.0
L Line length mil 100.0
W1 (for Layout option) Width of line that connects to pin 1 mil 0.0
0.1
W
H
----- 10
0.1
S
H
---- - 10
2-18 MCFIL (Microstrip Coupled-Line Filter Section)
1 Er 18
where
W 0, S 0, L 0 for l ayout
W1 0, W2 0
Notes/Equations
The per-uni t-l ength coupl i ng capaci tances are cal cul ated usi ng the formul a
devel oped by Ki rschni ng and Jansen for paral l el coupl ed mi crostri p l i nes, and
the formul a devel oped by Hammerstad and Jensen for si ngl e mi crostri p l i ne.
Di sper si on, end effect, and conductor l oss are i ncl uded. The even- and odd-mode
l i ne i mpedances are cal cul ated based on the coupl i ng capaci tances and
conductor l osses. The resul t i s used to cal cul ate the network parameters of the
di stri buted, coupl ed-l i ne model .
thermal noi se).
i nner edges of the conductor stri ps. I f the connecti ng transmi ssi on l i nes are
References
[1] R. Garg and I . J. Bahl . Characteri sti cs of Coupl ed Mi crostri pl i nes, MTT-27,
Jul y 1979.
25
H mm ( )
---------------------
MCFIL (Microstrip Coupled-Line Filter Section) 2-19
Computer-Ai ded Desi gn, MTT Symposium Digest, 1980, pp. 407-409
2-20 MCLIN (Microstrip Coupled Lines)
MCLIN (Microstrip Coupled Lines)
Symbol
Illustration
Parameters
Range of Usage
0.01 H W 100.0 H
0.1 H S 10.0 H
1 Er 18
T 0
S Space between lines mil 10.0
25
H mm ( )
---------------------
MCLIN (Microstrip Coupled Lines) 2-21
where
W 0, S 0, L 0 for l ayout
W1 0, W2 0, W3 0, W4 0
Notes/Equations
Di spersi on and conductor l oss are i ncl uded. The even- and odd-mode l i ne
i mpedances are cal cul ated based on the coupl i ng capaci tances and conductor
l osses. The resul t i s used to cal cul ate the network parameters of the
thermal noi se).
References
[1] R. Garg and I . J. Bahl . Characteri sti cs of Coupl ed Mi crostri pl i nes, MTT-27,
Jul y 1979.
2-22 MCORN (90-degree Microstrip Bend (Unmitered))
MCORN (90-degree Microstrip Bend (Unmitered))
Symbol
Illustration
Parameters
Range of Usage
2.36 Er 10.4
where
Er = di el ectri c constant
W Conductor width mil 25.0
1
0.2
W
H
----- 6.0
12
H mm ( )
---------------------
MCORN (90-degree Microstrip Bend (Unmitered)) 2-23
Notes/Equations
1. The frequency-domai n model i s an empi ri cal l y based, anal yti cal model whi ch
Jansen and Koster accordi ng to the fol l owi ng formul a.
pF/m
nH/m
thermal noi se).
References
Digest, May 1983, pp. 495-497.
[2] N. Marcuvi tz, Waveguide Handbook, McGraw-Hi l l , New York, 1951,
pp. 312-313.
Equivalent Circuit
C
H
-----
W
H
----- 2.6
r
5.64
W
H
----- 10.35
r
2.5 + ( ) + + =
L
H
----- 220.6356
1 1.35 0.18
W
H
-----
\ .
| |
1.39
exp
)
`

=
C
L L
2-24 MCROS (Microstrip Cross-Junction)
MCROS (Microstrip Cross-Junction)
Symbol
Illustration
Parameters
Range of Usage
0.25 W
i
/H 8
where
Er 50
W1 Conductor width of line at pin 1 mil
MCROS (Microstrip Cross-Junction) 2-25
Notes/Equations
1. Thi s mi crostri p cross model i s deri ved by curve fi tti ng the resul ts of mi crostri p
cross si mul ati ons of an Agi l ent i nternal el ectromagneti c fi el d sol ver. The new
mi crostri p cross model can be appl i ed to the most commonl y used substrates
i ncl udi ng duri od, al umi na, and GaAs. The range of val i di ty of the model i s
further extended for use i n mi crowave and RF ci rcui t desi gn appl i cati ons.
The i nductance equati ons are i nvari ant to the rel ati ve di el ectri c constant on the
substrate. Di spersi on and conductor l oss are not i ncl uded.
2. I n l ayout, al l pi ns are centered at the correspondi ng edges.
References
[1] K. C. Gupta, R. Garg, and R. Chadha. Computer-Aided Design of Microwave
Circuits, Artech House, 1981, pp. 197-199.
Equivalent Circuit
T
1
T
2
T
3
T
4
C
1
C
2
C
3
C
4
L
1
L
3
L
4
L
2
L
5
C
5
L
6
2-26 MCROSO (Alternate Libra Microstrip Cross-Junction)
MCROSO (Alternate Libra Microstrip Cross-Junction)
Symbol
Illustration
Parameters
Range of Usage
0.4 W
i
/H 2.5
where
W1 Conductor width of line at pin 1 mil 25.0
MCROSO (Alternate Libra Microstrip Cross-Junction) 2-27
Notes/Equations
1. The frequency-domai n model i s an empi ri cal l y based, anal yti cal model that
parameters are cal cul ated based on the expressi ons devel oped by Gupta et al .
The capaci tance equati ons are modi fi ed to take i nto account the rel ati ve
di el ectri c constant of the materi al accordi ng to the fol l owi ng formul a.
The i nductance equati ons are i nvari ant to the rel ati ve di el ectri c constant on the
substrate. Di spersi on and conductor l oss are not i ncl uded.
thermal noi se).
5. I n l ayout, al l pi ns are centered at the correspondi ng edges.
References
x
r
sub
= ( ) C
x
r
9.9 = ( )
Z
o
(
r
9.9 w Wx) = , =
Z
o
r
sub
w Wx = , = ( )
---------------------------------------------------------
eff
r
sub
w Wx = , = ( )
eff
r
9.9 w Wx = , = ( )
------------------------------------------------------------ =
2-28 MCROSO (Alternate Libra Microstrip Cross-Junction)
Equivalent Circuit
T
1
T
2
T
3
T
4
C
1
C
2
C
3
C
4
L
1
L
3
L
4
L
2
L
5
MCURVE (Microstrip Curved Bend) 2-29
MCURVE (Microstrip Curved Bend)
Symbol
Illustration
Parameters
Range of Usage
0.01 H W 100 H
180 Angl e 180
Radi us W/2
where
Angle Angle subtended by the bend deg 90
Radius Radius (measured to strip centerline) mil 100.0
Radius
Angle
2-30 MCURVE (Microstrip Curved Bend)
Notes/Equations
1. The mi crostri p curved bend i s model ed i n the frequency domai n as an
equi val ent pi ece of strai ght mi crostri p l i ne. The mi crostri p l i ne i s model ed
usi ng the MLI N component, i ncl udi ng conductor l oss, di el ectri c l oss and
di spersi on. A correcti on for fi ni te l i ne thi ckness i s appl i ed to the l i ne wi dth.
The l ength of the equi val ent strai ght mi crostri p secti on i s equal to the product
of the centerl i ne radi us and the angl e i n radi ans.
thermal noi se).
6. I n l ayout, a posi ti ve val ue for Angl e speci fi es a countercl ockwi se curvature; a
negati ve val ue speci fi es a cl ockwi se curvature.
MCURVE2 (Microstrip Curved Bend) 2-31
MCURVE2 (Microstrip Curved Bend)
Symbol
Illustration
Parameters
Range of Usage
0.01 H W 100 H
360 Angl e 360
W Radi us 100 W
NMode = 0, 1, 2 ...
Angle Angle of bend deg 90
NMode Number of modes (refer to note 2) Integer 2
Radius
Angle
2-32 MCURVE2 (Microstrip Curved Bend)
where
Notes/Equations
1. The frequency-domai n anal yti cal model i s based on a magneti c wal l wavegui de
model devel oped by Wei sshaar and Tri pathi . The model i ncl udes the effect of
hi gher order modes of propagati on. Conductor l oss, di el ectri c l oss, and
di spersi on of both effecti ve di el ectri c constant and characteri sti c i mpedance are
al so i ncl uded.
2. NMode=1 or, at most, NMode=2 shoul d provi de sati sfactory accuracy.
I ncreasi ng NMode for i mprovi ng accuracy resul ts i n si gni fi cantl y i ncreased
si mul ati on ti me and addi ti onal memor y r equi r ements.
thermal noi se).
References
[1] A. Wei sshaar, S. Luo, M. Thorburn, V. K. Tri pathi , M. Gol dfarb, J. L. Lee, and E.
Reese. Model i ng of Radi al Mi crostri p Bends, I EEE MTT-S I nternational
Microwave Symposium Digest, Vol . I I I , May 1990, pp. 1051-1054.
[2] A. Wei sshaar and V. K. Tri pathi . Perturbati on Anal ysi s and Model i ng of
Curved Mi crostri p Bends, I EEE Transactions on Microwave Theory and
Techniques, Vol . 38, No. 10, October 1990, pp. 1449-1454.
MEANDER (Meander Line) 2-33
MEANDER (Meander Line)
Symbol
Available in ADS
Parameters
Notes/Equation
1. The el ectri cal model behi nd the MEANDER component i s the same as for the
MLI N (Ki rschni ng) model . The total l ength of the MEANDER l i ne i s cal cul ated
and used as the val ue for the l ength of the transmi ssi on l i ne. The effect of the
curves of the meander l i ne i s therefore not i ncl uded i n the model .
Refer to documentati on for MLI N (Mi crostri p Li ne) on page 2-60 for more
i nformati on.
2. There are two approaches to more accuratel y si mul ate a Meander l i ne:
To i ncl ude the effects of bends and coupl i ng between l i nes, use Momentum.
Convert the Meander l i ne to a trace (Edit > Component > Flatten, then Edit >
Path/Trace/Wire > Convert Path to Trace), then convert the trace to
Subst Microstrip substrate name
W Line width mil
L Line length mil
Spacing Minimum spacing
CornerType Corner type: square, mitered, curve square
EndDir Ending direction: clockwise, counterclockwise clockwise
CutoffRatio Mitered corner cutoff ratio
CurveRad Curve radius
LeadL Lead length
XOffset X-offset of second node from the first node
YOffset Y-offset of second node from the first node
Wall1 Distance from near edge of strip H to first sidewall
Wall2 Distance from near edge of strip H to second sidewall
2-34 MEANDER (Meander Line)
transmi ssi on l i ne el ements, Edit > Path/Trace/Wire > Convert Traces. Thi s
approach wi l l not i ncl ude the effects of coupl i ng between traces.
thermal noi se).
MGAP (Microstrip Gap) 2-35
MGAP (Microstrip Gap)
Symbol
Illustration
Parameters
Range of Usage
1 Er 15
0.1 3.0
0.2
where
Notes/Equations
1. The frequency-domai n model i s an empi ri cal l y based, anal yti cal model that
consi sts of a l umped component, equi val ent ci rcui t. The equi val ent ci rcui t
S Length of gap (spacing) mil 10.0
W
H
-----
S
H
-----
2-36 MGAP (Microstrip Gap)
Jansen and Koster. Di spersi on i s i ncl uded i n the capaci tance cal cul ati ons.
2. Thi s new versi on of the MGAP component i mproves the si mul ati on accuracy of
gap capaci tance.
thermal noi se).
References
[1] E. Hammerstad, Computer Ai ded Desi gn of Mi crostri p Coupl ers wi th Accurate
Di sconti nui ty Model s, I EEE MTT-S I nternational Microwave Symposium
Digest, June 1981, pp. 54-56 (wi th modi fi cati ons).
[2] M. Ki rschni ng, Jansen, R.H., and Koster, N. H. L. Measurement and
Resonator Method, I EEE MTT-S I nternational Microwave Symposium Digest,
May 1983, pp. 495-497.
[3] N. H. L Koster and R. H. Jansen. The Equi val ent Ci rcui t of the Asymmetri cal
Seri es Gap i n Mi crostri p and Suspended Substrate Li nes, I EEE Trans. on
Microwave Theory and Techniques, Vol . MTT-30, Aug. 1982, pp. 1273-1279.
Equivalent Circuit
C
g
C
P
C
P
MICAP1 (Microstrip Interdigital Capacitor (2-port)) 2-37
MICAP1 (Microstrip Interdigital Capacitor (2-port))
Symbol
Illustration
Parameters
Range of Usage
Er 12.5
T 0.015 H
W Finger width mil 5.0
G Gap between fingers mil 5.0
Ge Gap at end of fingers mil 5.0
L Length of overlapped region mil 50.0
Np Number of finger pairs Integer 3
Wt Width of interconnect mil 25.0
Wf Width of feedline mil 25.0
Wf
Wt
Ge
Wf
Wt
2-38 MICAP1 (Microstrip Interdigital Capacitor (2-port))
0.05 H W 0.8 H
0.025 H G 0.45 H
where
Notes/Equations
1. The frequency-domai n anal yti cal model i s a di stri buted, coupl ed-l i ne model
devel oped for Agi l ent by Wi l l i am J. Getsi nger. (References [1], [2], and [3] are
suppl emental .)
The di gi ts of the structure are assumed to be part of an i nfi ni te array exci ted on
an even- and odd-mode basi s. Each component i n thi s array i s a uni t cel l
bounded by magneti c wal l s. The model cal cul ates the per-uni t-l ength
admi ttance and i mpedance matri ces (even and odd modes) for each cel l . Thi s
cal cul ati on i s based on the even and odd mode capaci tances, the conductor l oss
and the substrate di el ectri c l oss. The capaci tances are cal cul ated by a conformal
mappi ng techni que. Conductor l osses are cal cul ated usi ng Wheel er's method.
Correcti ons for fi ni te stri p thi ckness and end effects are i ncl uded. Network
parameters of the transmi ssi on l i ne model of each cel l are cal cul ated from the
admi ttance and i mpedance matri ces. The cel l s are combi ned to from the
compl ete model i ncl udi ng end effects. Mi crostri p di spersi on effects are i ncl uded
i n thi s model .
2. Thi s component i s i ntended for seri es connecti on.
thermal noi se).
2.4
H mm ( )
---------------------
References
[1] G. Al l ey, I nterdi gi tal Capaci tors and Thei r Appl i cati on to Lumped-El ement
Mi crowave I ntegrated Ci rcui ts, I EEE Trans. MTT-18, December 1970, pp.
1028-1033.
[2] R. Esfandi ari , D. Maku, and M. Si racusa, Desi gn of I nterdi gi tated Capaci tors
and Thei r Appl i cati on to Gal l i um-Arseni de Monol i thi c Fi l ters, I EEE Trans.
MTT, Vol . 31, No. 1, January 1983, pp. 57-64.
[3] X. Y. She and Y. L. Chow. I nterdi gi tal mi crostri p capaci tor as a four-port
network, I EEE Proceedings, Pt. H, Vol . 133, 1986, pp. 191-197.
Symbol
Illustration
Parameters
Range of Usage
Er 12.5
T 0.015 H
Ge
Wt
Wt
0.05 H W 0.8 H
0.025 H G 0.45 H
where
Notes/Equations
suppl emental .)
compl ete model i ncl udi ng end effects. Mi crostri p di spersi on effects are i ncl ude
i n thi s model .
2. Thi s component i s used when a cascade confi gurati on i s not appropri ate.
thermal noi se).
2.4
H mm ( )
---------------------
References
1028-1033.
[2] R. Esfandi ari , D. Maku and M. Si racusa. Desi gn of I nterdi gi tated Capaci tors
MTT, Vol . 31, No. 1, January 1983, pp. 57-64.
Symbol
Illustration
Parameters
Range of Usage
Er 12.5
T 0.015 H
0.05 H W 0.8 H
0.025 H G 0.45 H
Wf Width of the feedline mil 25.0
Ge
Wt
Wt
Wf
where
Notes/Equations
suppl emental .)
i n thi s model .
2. Thi s i s a 1-port confi gurati on of MI CAP1 for use where one si de of the
i nterdi gi tal capaci tor i s connected to ground.
thermal noi se).
7. Proper groundi ng must be added manual l y i n the l ayout. The i mpl i ed ground
pl ane i s drawn on the l ayer mapped to the Hol e parameter i n the MSUB
component. The ground pl ane i s for model i ng i n Momentum and i s not model ed
separatel y i n the ci rcui t si mul ator.
2.4
H mm ( )
---------------------
References
1028-1033.
[2] R. Esfandi ari , D. Maku and M. Si racusa. Desi gn of I nterdi gi tated Capaci tors
MTT, Vol . 31, No. 1, pp. 57-64, January 1983.
2-46 MICAP4 (Microstrip Interdigital Capacitor (Grounded 2-port))
MICAP4 (Microstrip Interdigital Capacitor (Grounded 2-port))
Symbol
Illustration
Parameters
Wt
Wt
Ge
MICAP4 (Microstrip Interdigital Capacitor (Grounded 2-port)) 2-47
Range of Usage
Er 12.5
T 0.015 H
0.05 H W 0.8 H
0.025 H G 0.45 H
where
Notes/Equations
devel oped for Agi l ent by Wi l l i am J. Getsi nger. References [1], [2], and [3] are
suppl emental .
i n thi s model .
2. Thi s i s a 2-port confi gurati on of MI CAP2 i ntended for use where one si de of the
i nterdi gi tal capaci tor i s connected to ground and the other si de does not have a
si mpl e si ngl e connecti on poi nt.
2.4
H mm ( )
---------------------
2-48 MICAP4 (Microstrip Interdigital Capacitor (Grounded 2-port))
thermal noi se).
7. Proper groundi ng must be added manual l y i n the l ayout. The i mpl i ed ground
pl ane i s drawn on the l ayer mapped to the Hol e parameter i n the MSUB
component. The ground pl ane i s for model i ng i n Momentum and i s not model ed
separatel y i n the ci rcui t si mul ator.
References
1028-1033.
[2] R. Esfandi ari , D. Maku, and M. Si racusa. Desi gn of I nterdi gi tated Capaci tors
MTT, Vol . 31, No. 1, pp. 57-64, January 1983.
MLANG (Microstrip Lange Coupler) 2-49
MLANG (Microstrip Lange Coupler)
Symbol
Illustration
Parameters
Hw (for Layout option) Height of wire bridge above the conductors mil 15.0
W1 (for Layout option) Width of transmission lines that connect to pins 1, 2, 3, 4 mil 25.0
2-50 MLANG (Microstrip Lange Coupler)
Range of Usage
1 Er 18
where
(3W + 2S) W1 0 for proper l ayout
Notes/Equations
Even- and odd-mode capaci tances are cal cul ated for each uni t-cel l of the
i nterdi gi tated structure. Al ternate fi ngers are assumed to be at the same
potenti al . Onl y coupl i ng between adjacent fi ngers i s i ncl uded i n the model .
l osses. Thi s resul t i s used to cal cul ate the network parameters of the
thermal noi se).
6. The conductor drawn on the l ayer mapped to the Cond2 parameter, as wel l as
the transi ti on drawn on the l ayer to the Di el 2 parameter, i n the MSUB
component are for the purpose of model i ng i n Momentum. They are not
model ed separatel y i n the ci rcui t si mul ator.
0.01
W
H
----- 10
0.01
S
H
---- - 10
25
H mm ( )
---------------------
MLANG (Microstrip Lange Coupler) 2-51
References
[1] W. H. Chi l ds, A 3-dB I nterdi gi tated Coupl er on Fused Si l i ca, I EEE MTT
Symposium Digest, 1977.
[3] M. Ki rschni ng and R. H. Jansen, Accurate Wi de-Range Desi gn Equati ons for
the Frequency-Dependent Characteri sti cs of Paral l el Coupl ed Mi crostri p
Li nes, I EEE Trans. Microwave Theory and Techniques, Vol . MTT-32, January
1984, pp. 83-89.
2-52 MLANG6 (Microstrip Lange Coupler (6-Fingered))
MLANG6 (Microstrip Lange Coupler (6-Fingered))
Symbol
Illustration
Parameters
MLANG6 (Microstrip Lange Coupler (6-Fingered)) 2-53
Range of Usage
1 Er 18
where
Notes/Equations
thermal noi se).
6. W1 i s a l ayout-onl y parameter and does not affect the si mul ati on resul ts.
0.01
W
H
----- 10 < <
0.01
S
H
---- - 10 < <
25
H mm ( )
---------------------
References
1984, pp. 83-89.
MLANG8 (Microstrip Lange Coupler (8-Fingered))
Symbol
Illustration
Parameters
Range of Usage
1 Er 18
0.01 10
0.01 10
where
Notes/Equations
thermal noi se).
6. W1 i s a l ayout-onl y parameter and does not affect the si mul ati on resul ts.
W
H
-----
S
H
-----
25
H mm ( )
---------------------
References
1984, pp. 83-89.
2-58 MLEF (Microstrip Line Open-End Effect)
MLEF (Microstrip Line Open-End Effect)
Symbol
Illustration
Parameters
Range of Usage
2 Er 50
where
Wall1
Distance from near edge of strip H to first sidewall; Wall1 > 1/2 Maximum( W,
H)
mil 1.0e+30
Wall2
Distance from near edge of strip H to second sidewall; Wall2 > 1/2 Maximum(
W, H)
mil 1.0e+30
Mod Choice of dispersion model None Kirschning
W
H
----- 0.2
MLEF (Microstrip Line Open-End Effect) 2-59
Notes/Equations
1. The open-end effect i n mi crostri p i s model ed i n the frequency domai n as an
extensi on to the l ength of the mi crostri p stub. The mi crostri p i s model ed usi ng
the MLI N component, i ncl udi ng conductor l oss, di el ectri c l oss and di spersi on. A
correcti on for fi ni te l i ne thi ckness i s appl i ed to the l i ne wi dth. The l ength of the
mi crostri p extensi on, dl , i s based on the formul a devel oped by Ki rschni ng,
Jansen and Koster. Fri ngi ng at the open end of the l i ne i s cal cul ated and
i ncl uded i n the model .
thermal noi se).
6. When the Hu parameter of the substrate i s l ess than
100 Thi ckness_of_substrate, the i mpedance cal cul ati on wi l l not be properl y
done i f WALL1 and WALL2 are l eft bl ank.
7. Wal l 1 and Wal l 2 must sati sfy the fol l owi ng constrai nts:
Mi n(Wal l 1) > 1/2 Maxi mum(Metal _Wi dth, Substrate_Thi ckness)
Mi n(Wal l 2) > 1/2 Maxi mum(Metal _Wi dth, Substrate_Thi ckness)
References
[1] M. Ki rschni ng, R. H. Jansen, and N. H. L. Koster. Accurate Model for
Open-End Effect of Mi crostri p Li nes, Electronics Letters, Vol . 17, No. 3,
February 5, 1981, pp. 123-125.
Equivalent Circuit
1 d1
Z
0
Z
0
2-60 MLIN (Microstrip Line)
MLIN (Microstrip Line)
Symbol
Illustration
Parameters
Range of Usage
1 ER 128
where
ER = di el ectri c constant (from associ ated Subst)
Wall1
Distance from near edge of strip H to first sidewall; Wall1 > 1/2 Maximum(
W, H)
mil 1.0e+30
Wall2
Distance from near edge of strip H to second sidewall; Wall2 > 1/2
Maximum( W, H)
mil 1.0e+30
Mod Choice of dispersion model None Kirschning
0.01
W
H
----- 100
MLIN (Microstrip Line) 2-61
Recommended Range for di fferent di spersi on model s
Ki rschni ng and Jansen:
1 Er 20
0.1 H W 100 H
Kobayashi :
1 Er 128
0.1 H W 10 H
0 H 0.13
Yamashi ta:
2 Er 16
0.05 H W 16 H
where
= wavel ength
freq 100 GHz
Notes/Equation
1. The frequency-domai n anal yti cal model uses the Hammerstad and Jensen
formul a to cal cul ate the stati c i mpedance, Z
o
, and effecti ve di el ectri c constant,
eff.
. The attenuati on factor, , i s cal cul ated usi ng the i ncremental i nductance
rul e by Wheel er. The frequency dependence of the ski n effect i s i ncl uded i n the
conductor l oss cal cul ati on. Di el ectri c l oss i s al so i ncl uded i n the l oss cal cul ati on.
2. Di spersi on effects are i ncl uded usi ng ei ther the i mproved versi on of the
Ki rschni ng and Jansen model , the Kobayashi model , or the Yamashi ta model ,
dependi ng on the choi ce speci fi ed i n Mod. The program defaul ts to usi ng the
Ki rschni ng and Jansen formul a.
3. For ti me-domai n anal ysi s, an i mpul se response obtai ned from the frequency
anal yti cal model i s used.
thermal noi se).
2-62 MLIN (Microstrip Line)
7. When the Hu parameter of the substrate i s l ess than 100 H, the encl osure
effect wi l l not be properl y cal cul ated i f Wal l 1 and Wal l 2 are l eft bl ank.
Mi n(Wal l 1) > 1/2 Maxi mum(W, H)
References
[1] W. J. Getsi nger, Measurement and Model i ng of the Apparent Characteri sti c
I mpedance of Mi crostri p, MTT-31, August 1983.
Computer-ai ded Desi gn, MTT Symposium Digest, 1980.
[3] M. Ki rschni ng and R.H. Jansen, Accurate Model for Effecti ve Di el ectri c
Constant of Mi crostri p and Val i di ty up i n Mi l l i meter-Wave Frequenci es,
Electron. Lett, Vol . 18 March 18, 1982, pp. 272-273.
[4] M. Kobayashi , Frequency Dependent Characteri sti cs of Mi crostri ps on
Ansi otropi c Substrates, I EEE Trans., Vol . MTT-30, November 1983, pp. 89-92.
[5] M. Kobayashi , A Di spersi on Formul a Sati sfyi ng Recent Requi rements i n
Mi crostri p CAD, I EEE Trans., Vol . MTT-36, August 1990, pp. 1246-1370.
[6] E. Yamashi ta, K. Atshi and T. Hi rachata, Mi crostri p Di spersi on i n a Wi de
Frequency Range, I EEE Trans., Vol . MTT-29, June 1981, pp. 610-611.
[7] H. A. Wheel er, Formul as for the Ski n Effect, Proc. I RE, Vol . 30, September,
1942, pp. 412-424.
MLOC (Microstrip Open-Circuited Stub) 2-63
MLOC (Microstrip Open-Circuited Stub)
Symbol
Illustration
Parameters
Range of Usage
1 Er 128
where
Wall1 Distance from near edge of strip to first sidewall; Wall1 > 1/2 Maximum( W, H) mil 1.0e+30
Wall2 Distance from near edge of strip to second sidewall; Wall2 > 1/2 Maximum( W, H) mil 1.0e+30
Mod Choice of dispersion formula None Kirschning
0.01
W
H
----- 100
2-64 MLOC (Microstrip Open-Circuited Stub)
1 Er 20
0.1 H W 100 H
Kobayashi :
1 Er 128
0.1 H W 10 H
0 H 0.13
Yamashi ta:
2 Er 16
0.05 H W 16 H
where
= wavel ength
freq 100 GHz
Notes/Equations
1. The frequency-domai n anal yti cal model uses the Ki rschni ng and Jansen
o
eff.
thermal noi se).
MLOC (Microstrip Open-Circuited Stub) 2-65
effect wi l l not be properl y cal cul ated i f Wal l 1 and Wal l 2 are l eft bl ank.
9. End effects are i ncl uded i n the model .
References
[4] Kobayashi , M., Frequency Dependent Characteri sti cs of Mi crostri ps on
[5] Kobayashi , M., A Di spersi on Formul a Sati sfyi ng Recent Requi rements i n
[6] Yamashi ta, E., K. Atshi and T. Hi rachata, Mi crostri p Di spersi on i n a Wi de
1942, pp. 412-424.
2-66 MLSC (Microstrip Short-Circuited Stub)
MLSC (Microstrip Short-Circuited Stub)
Symbol
Illustration
Parameters
Range of Usage
1 Er 128
where
Wall1 Distance from near edge of strip to first sidewall; Wall1 > 1/2 Maximum( W, H) mil 1.0e+30
Wall2 Distance from near edge of strip to second sidewall; Wall2 > 1/2 Maximum( W, H) mil 1.0e+30
Mod Choice of dispersion formula None Kirschning
0.01
W
H
----- 100
MLSC (Microstrip Short-Circuited Stub) 2-67
1 Er 20
0.1 H W 100 H
Kobayashi :
1 Er 128
0.1 H W 10 H
0 H 0.13
Yamashi ta:
2 Er 16
0.05 H W 16 H
where
= wavel ength
freq 100 GHz
Notes/Equations
1. The frequency-domai n anal yti cal model uses the Ki rschni ng and Jansen
o
eff.
thermal noi se).
2-68 MLSC (Microstrip Short-Circuited Stub)
effect wi l l not be properl y cal cul ated i f Wal l 1 and Wal l 2 are l eft bl ank. Hu and
H respecti vel y cover the hei ght and substrate thi ckness speci fi ed i n the
associ ated substrate.
where H i s the substrate thi ckness speci fi ed i n the associ ated substrate.
9. End effects are i ncl uded i n the model .
References
[4] Kobayashi , M., Frequency Dependent Characteri sti cs of Mi crostri ps on
[5] Kobayashi , M., A Di spersi on Formul a Sati sfyi ng Recent Requi rements i n
[6] Yamashi ta, E., K. Atshi and T. Hi rachata, Mi crostri p Di spersi on i n a Wi de
1942, pp. 412-424.
MRIND (Microstrip Rectangular Inductor) 2-69
MRIND (Microstrip Rectangular Inductor)
Symbol
Illustration
Parameters
Range of Usage
W > 0; S > 0; T > 0
N 8 (or the hi ghest number of turns that wi l l fi t, gi ven W, S, L1 and L2)
L1 > 2 N W + (2 N-1) S
L2 > 2 N W + (2 N-1) S
N Number of turns (need not be an integer) None 3
L1 Length of second outermost segment (see illustration) mil 30.0
L2 Length of outermost segment (see illustration) mil 20.0
2-70 MRIND (Microstrip Rectangular Inductor)
W + S 0.01 H
T/W < 0.5
T/S < 0.5
N > 0.25 turns
where
S = conductor spaci ng
Notes/Equations
1. The number of turns (N) i s adjusted to the nearest quarter turn. Thi s
component does not i ncl ude a connecti on (such as an ai r-bri dge) from the center
of the i nductor to the outsi de.
2. The frequency-domai n anal yti cal model for thi s component has been devel oped
for Agi l ent by Wi l l i am J. Getsi nger. Resul ts publ i shed i n the references l i sted at
the end of these notes were used i n the devel opment of thi s model .
3. Each segment of the spi ral i s model ed as a l umped C-L-C -secti on wi th mutual
i nducti ve coupl i ng to al l other paral l el segments i ncl udi ng those of an i mage
spi ral . The i mage spi ral accounts for the effects of the mi crostri p ground pl ane.
The i nducti ve cal cul ati ons i ncl ude the end-effects and di fferi ng l engths of
coupl ed segments. The capaci ti ve components account for capaci tance to
ground, coupl i ng to the paral l el adjacent segments, and the coupl i ng to the next
paral l el segments beyond the adjacent, on both si des.
The frequency dependence of the ski n effect i s i ncl uded i n the conductor l oss
cal cul ati on. A smooth transi ti on i s provi ded from dc resi stance to resi stance due
to ski n effect at hi gh frequenci es. Di el ectri c l oss i s al so i ncl uded i n the l oss
cal cul ati on.
thermal noi se).
MRIND (Microstrip Rectangular Inductor) 2-71
8. I n l ayout, the number of turns i s rounded to the nearest quarter-turn. The
connecti on wi l l al i gn at the i nsi de edge at pi n 1 and the outsi de edge at pi n 2,
unl ess W1 < W or WB > W, i n whi ch case the conductors are centered.
References
[1] C. Hoer and C. Love, Exact i nductance equati ons for rectangul ar conductors
wi th appl i cati ons to more compl i cated geometri cs, J ournal of Research of NBS,
Vol . 69C, No. 2, Apri l -June 1965, pp. 127-137.
[2] N. Marcuvi tz, Waveguide Handbook, McGraw-Hi l l , New York, 1951, secti ons
5.11 and 5.28.
[3] V. Ghoshal and L. Smi th, Ski n effects i n narrow copper mi crostri p at 77K,
I EEE Trans. on Microwave Theory and Tech., Vol . 36, December 1988.
[4] H. Wheel er, Formul as for the Ski n Effect, Proc. I RE, Vol . 30, Sept. 1941, pp.
412-424.
[5] K. Gupta, R. Garg and I . Bahl , Microstrip lines and slotlines, Artech House,
Dedham, MA, secti on 2.4.5.
2-72 MRINDELA (Elevated Microstrip Rectangular Inductor)
MRINDELA (Elevated Microstrip Rectangular Inductor)
Symbol
Illustration
Parameters
Ns Number of segments Integer 7
L1 Length of first segment mil 11.4
L2 Length of second segment mil 9.4
L3 Length of third segment mil 7.4
Ln Length of last segment mil 0
Hi Elevation of inductor above substrate mil 12.5
W/2
L2
L1
Ln
Wu
L3
S
W
UE
AU
MRINDELA (Elevated Microstrip Rectangular Inductor) 2-73
Range of Usage
W > 0
S > 0
Sx > 2W
Au = 0, 45, or 90
Au must be 90 i f l ast segment (Ln) i s l ess than ful l l ength
where Lnmax i s the full length of the l ast segment (refer to
note 5)
Ti W and Ti S
Notes/Equations
1. The i nductor i s el evated i n ai r above the substrate wi th a bri dge connecti on
that i s i n the form of an underpass stri p conductor. Effects of support posts are
i ncl uded. Support posts are assumed to exi st at each corner, pl us al ong the
segments, dependi ng on the val ue of Sx.
Ti Thickness of conductors; T parameter in MSUB is ignored mil 0.118
Ri Resistivity (normalized to gold) of conductors None 1.0
Sx Spacing limit between support posts; 0 to ignore posts mil 0
Cc Coefficient for capacitance of corner support posts (ratio of actual post
cross-sectional area to W
2
)
None 2.0
Cs Coefficient for capacitance of support posts along segment (ratio of actual
post cross-sectional area to W
2
)
None 1.0
Wu Width of underpass strip conductor mil 0.4
Au Angle of departure from innermost segment deg 0.0
UE Extension of underpass beyond inductor mil 4.0
W S +
2
--------------- L n L nmax
2-74 MRINDELA (Elevated Microstrip Rectangular Inductor)
cal cul ati on.
4. The underpass conductor (bri dge) connects to the i nnermost segment and
crosses the i nductor from underneath the spi ral . The bri dge i s capacati vel y
coupl ed to each segment of the spi ral that i t crosses.
5. I f Ln i s set to 0, i t i s assumed to have full length. The full length (Lnmax) i s
such that the spaci ng from the contact reference poi nt to the i nner edge of the
fourth-from-l ast segment i s S+W/2.
I f Ns i s even: Lnmax = L2 (Ns 2) (W + S)/2
I f Ns i s odd: Lnmax = L3 (Ns 3) (W + S)/2
6. I f Wu=0, the effect of the underpass stri p conductor i s not si mul ated.
thermal noi se).
11. I n l ayout, spi ral segments are drawn on the l ayer mapped to the Cond2
parameter of the MSUB component; support posts are drawn on the l ayer
mapped to the Cond1 parameter of the MSUB component.
For l ayout pur poses the l ast segment (Ln) i s dr awn such that i t extends a
di stance of W/2 beyond the contact reference poi nt. Thi s al l ows for a square
regi on of si ze WW, on whi ch the contact to the underpass i s centered.
I nductor segments to ai rbri dge/underpass transi ti on are drawn on the l ayer
mapped to the di el 2 l ayer. The transi ti on i s onl y for the purpose of model i ng i n
Momentum and i s not taken i nto account i n the ci rcui t si mul ator.
For the transi ti on at pi n 2, i f the angl e of the ai rbri dge/underpass i s 0 or 45, the
wi dth of the transi ti on i s the wi dth of the ai rbri dge/underpass; i f the angl e of
MRINDELA (Elevated Microstrip Rectangular Inductor) 2-75
the ai rbri dge/underpass i s 90, the wi dth of the transi ti on i s the wi dth of the
i nductor segment.
References
5.11 and 5.28.
412-424.
2-76 MRINDELM (Elevated Microstrip Rectangular Inductor (3-Layer Substrate))
MRINDELM (Elevated Microstrip Rectangular Inductor (3-Layer
Substrate))
Symbol
Illustrations
W/2
L2
L1
LN
WU
L3
S
W
UE
AU
MRINDELM (Elevated Microstrip Rectangular Inductor (3-Layer Substrate)) 2-77
Parameters
L1 Length of first segment length 11.4
L2 Length of second segment length 9.4
L3 Length of third segment length 7.4
Wu Width of underpass conductor length 0.45
Au Angle of departure from innermost segment deg 0.0
UE Extension of underpass beyond inductor length 4.0
Range of Usage (including data item parameters)
W > 0
S > 0
AU = 0, 45, or 90
AU must be 90 i f l ast segment (LN) i s l ess than ful l l ength
where LNmax i s the full length of the l ast segment (refer to note 5)
MSUBST3 substrate thi ckness H (1) > metal thi ckness T (1)
Notes/Equations
1. The i nductor i s el evated above a second substrate, as descri bed by MSUBST3.
The bri dge connecti on i s i n the form of an underpass stri p conductor that i s
pri nted on the bottom substrate (descri bed by MSUBST3).
2. The frequency-domai n anal yti cal model for thi s el ement has been devel oped for
Agi l ent by Wi l l i am J. Getsi nger. Resul ts publ i shed i n the references l i sted at
coupl ed segments. The capaci ti ve el ements account for capaci tance to ground,
coupl i ng to the paral l el adjacent segments, and the coupl i ng to the next paral l el
segments beyond the adjacent, on both si des.
cal cul ati on.
4. The underpass conductor (bri dge) connects to the i nnermost segment and
crosses the i nductor from underneath the spi ral . The bri dge i s capacati vel y
coupl ed to each segment of the spi ral that i t crosses.
5. I f LN i s set to zero, i t i s assumed to have full length. The full length (LNmax) i s
I f NS i s even: LNmax = L2 (NS 2) (W + S)/2
I f NS i s odd: LNmax = L3 (NS 3) (W + S)/2
W S +
2
--------------- L N L Nmax
MRINDELM (Elevated Microstrip Rectangular Inductor (3-Layer Substrate)) 2-79
6. I f WU=0, the effect of the underpass stri p conductor i s not si mul ated.
7. For transi ent anal ysi s, mi crostri p i nductors are model ed usi ng a l umped RLC
ci rcui t.
8. For convol uti on anal ysi s, the frequency-domai n anal yti cal model i s used.
9. I n Layout, the spi ral i nductor i s mapped to the l ayer assi gned to the
LayerName[1] parameter of the MSUBST3 component referenced by the
MRI NDELM component. The underpass i s mapped to the l ayer assi gned to the
LayerName[2] parameter of the MBSUBST3 component referenced by the
MRI NDELM component.
For l ayout purposes the l ast segment (LN) i s drawn such that i t extends a
regi on of si ze WW, on whi ch the contact to the underpass i s centered.
The i nductor segments to ai r-bri dge/underpass transi ti on i s mapped to the
l ayer assi gned to the LayerVi aName[1] parameter of the MSUBST3 component
referenced i n the MRI NDELM component. The transi ti on i s onl y for the
purpose of model i ng i n Momentum and i s not taken i nto account i n the ci rcui t
si mul ator.
For the transi ti on at pi n 2, i f the angl e of the ai r-bri dge/underpass i s 0 or 45, the
wi dth of the transi ti on i s the wi dth of the ai r-bri dge/underpass; i f the angl e of
the ai r-bri dge/underpass i s 90, the wi dth of the transi ti on i s the wi dth of the
i nductor segment.
thermal noi se).
References
5.11 and 5.28.
412-424.
MRINDNBR (Microstrip Rectangular Inductor (No Bridge)) 2-81
MRINDNBR (Microstrip Rectangular Inductor (No Bridge))
Symbol
Illustration
Parameters
W/2
Ln
L2
L1
L3
S
W
2-82 MRINDNBR (Microstrip Rectangular Inductor (No Bridge))
Range of Usage
W > 0
S > 0

where
Lnmax i s the full length of the l ast segment (refer to note 4)
Notes/Equations
1. Thi s component model i s the same as that for MRI ND. As wi th MRI ND, thi s
component does not i ncl ude a connecti on (such as an ai rbri dge) from the center
of the i nductor to the outsi de.
cal cul ati on.
4. I f Ln i s set to zero, i t i s assumed to have full length. The full length (Lnmax) i s
W S +
2
--------------- L n L nmax
MRINDNBR (Microstrip Rectangular Inductor (No Bridge)) 2-83
thermal noi se).
9. For l ayout purposes, the l ast segment (Ln) i s drawn such that i t extends a
regi on of si ze WW, on whi ch the contact to the i nner pi n i s centered.
References
5.11 and 5.28.
412-424.
2-84 MRINDSBR (Microstrip Rectangular Inductor (Strip Bridge, 3-Layer Substrate))
MRINDSBR (Microstrip Rectangular Inductor (Strip Bridge, 3-Layer
Substrate))
Symbol
Illustrations
W/2
L2
L1
LN
WB
L3
S
W
BE
AB
MRINDSBR (Microstrip Rectangular Inductor (Strip Bridge, 3-Layer Substrate)) 2-85
Parameters
Range of Usage (including data item parameters)
W > 0
S > 0
AB = 0, 45, or 90
AB must be 90 i f l ast segment i s l ess than ful l l ength
where
LNmax i s the full length of the l ast segment (refer to note 5)
Notes/Equations
1. The i nductor i s model ed as pri nted on the substrate descri bed by MSUBST3.
The bri dge stri p i s model ed as pri nted on a di el ectri c that i s descri bed by
MSUBST3.
2. The frequency-domai n anal yti cal model for thi s el ement has been devel oped for
Agi l ent by Wi l l i am J. Getsi nger. Resul ts publ i shed i n the references l i sted at
Wb Width of bridge strip conductor mil 0.45
Ab Angle of departure from innermost segment deg 0.0
Be Extension of bridge beyond inductor mil 4.0
W S +
2
--------------- L N L Nmax
2-86 MRINDSBR (Microstrip Rectangular Inductor (Strip Bridge, 3-Layer Substrate))
coupl ed segments. The capaci ti ve el ements account for capaci tance to ground,
coupl i ng to the paral l el adjacent segments, and the coupl i ng to the next paral l el
segments beyond the adjacent, on both si des.
cal cul ati on.
4. The bri dge conductor connects to the i nnermost segment and crosses the spi ral
from the top. The bri dge i s capaci ti vel y coupl ed to each segment of the spi ral
that i t crosses.
5. I f LN i s set to zero, i t i s assumed to have full length. The full length (LNmax) i s
I f NS i s even: LNmax = L2 (NS 2)(W + S)/2
I f NS i s odd: LNmax = L3 (NS 3)(W + S)/2
6. I f WB=0, the effect of the bri dge stri p conductor i s not si mul ated.
7. For transi ent anal ysi s, mi crostri p i nductors are model ed usi ng a l umped RLC
ci rcui t.
8. For convol uti on anal ysi s, the frequency-domai n anal yti cal model i s used.
9. I n Layout, the spi ral i nductor i s mapped to the l ayer assi gned to the
LayerName[2] parameter of the MSUBST3 component referenced by the
MRI NDSBR component. The stri p bri dge i s mapped to the l ayer assi gned to the
LayerName[1] parameter of the MBSUBST3 component referenced by the
MRI NDSBR component.
For l ayout purposes, the l ast segment (LN) i s drawn such that i t extends a
regi on of si ze WW, on whi ch the contact to the bri dge i s connected.
The i nductor segments to ai r-bri dge/underpass transi ti on i s mapped to the
l ayer assi gned to the LayerVi aName[1] parameter of the MSUBST3 component.
referenced by the MRI NDSBR component. The transi ti on i s onl y for the
purpose of model i ng i n Momentum and i s not taken i nto account i n the ci rcui t
si mul ator.
MRINDSBR (Microstrip Rectangular Inductor (Strip Bridge, 3-Layer Substrate)) 2-87
For the transi ti on at pi n 2, i f the angl e of the ai r-bri dge/underpass i s 0 or 45,
the wi dth of the transi ti on i s the wi dth of the ai r-bri dge/underpass; i f the angl e
of the ai r-bri dge/underpass i s 90, the wi dth of the transi ti on i s the wi dth of the
i nductor segment.
thermal noi se).
References
5.11 and 5.28.
412-424.
2-88 MRINDWBR (Microstrip Rectangular Inductor (Wire Bridge))
MRINDWBR (Microstrip Rectangular Inductor (Wire Bridge))
Symbol
Illustration
Parameters
Dw Diameter of bridge round wire mil 0.4
W/2
L2
L1
Ln
Dw
L3
S
W
WE
Aw
MRINDWBR (Microstrip Rectangular Inductor (Wire Bridge)) 2-89
Range of Usage
W > 0
S > 0
Aw = 0, 45, or 90
Aw must be 90 i f l ast segment i s l ess than ful l l ength
where
Lnmax i s the full length of the l ast segment (refer to note 4)
Notes/Equations
1. Thi s i nductor i s model ed as pri nted on the substrate descri bed by Subst. The
ai rbri dge i s i n the form of a round wi re that connects from the center of the
spi ral to the outsi de.
cal cul ati on.
Rb Resistivity (normalized to gold) of bridge wire mil 0.1
Hw Height of wire bridge above the inductor mil 15.0
Aw Angle of departure from innermost segment deg 0.0
WE Extension of bridge beyond inductor mil 4.0
W S +
2
--------------- L n L nmax
2-90 MRINDWBR (Microstrip Rectangular Inductor (Wire Bridge))
4. I f Ln i s set to zero, i t i s assumed to have full length. The full length (LNmax) i s
5. I f Dw=0, the effect of the wi re bri dge i s not si mul ated.
thermal noi se).
10. I n l ayout, spi ral segments are drawn on the l ayer mapped to the Cond1
parameter of the MSUB component. The wi re bri dge i s drawn on the bond l ayer.
For l ayout pur poses the l ast segment (Ln) i s dr awn such that i t extends a
regi on of si ze WW, on whi ch the contact to the wi re bri dge i s centered.
I nductor segments to ai rbri dge/underpass transi ti on are drawn on the l ayer
mapped to the di el 2 l ayer. The transi ti on i s onl y for the purpose of model i ng i n
Momentum and i s not taken i nto account i n the ci rcui t si mul ator.
For the transi ti on at pi n 2, i f the angl e of the ai r-bri dge/underpass i s 0 or 45, the
wi dth of the transi ti on i s the wi dth of the ai r-bri dge/underpass; i f the angl e of
the ai r-bri dge/underpass i s 90, the wi dth of the transi ti on i s the wi dth of the
i nductor segment.
References
5.11 and 5.28.
MRINDWBR (Microstrip Rectangular Inductor (Wire Bridge)) 2-91
412-424.
2-92 MRSTUB (Microstrip Radial Stub)
MRSTUB (Microstrip Radial Stub)
Symbol
Illustration
Parameters
Range of Usage
Er 128
10 Angl e 170
0.01 (L + D) Angl e (radi ans) 100 H (see i l l ustrati on)
Wi Width of input line mil 25.0
L Length of stub mil 100.0
Angle Angle subtended by stub deg 70
Angle Wi
0.01
Wi
H
------- 100
MRSTUB (Microstrip Radial Stub) 2-93
where
Notes/Equations
1. The frequency-domai n anal yti cal model i s a mi crostri p l i ne macro-model
devel oped by Agi l ent. The radi al stub i s constructed from a seri es of straight
mi crostri p secti ons of vari ous wi dths that are cascaded together. The mi crostri p
l i ne model i s the MLI N model . The number of secti ons i s frequency dependent.
Di spersi on effects i n the mi crostri p secti ons are i ncl uded. The
frequency-domai n anal yti cal model i s l ossl ess.
2. MRSTUB shoul d be used wi th MTEE or MCROS when used as a stub i n shunt
wi th a transmi ssi on l i ne.
thermal noi se).
2-94 MSABND_MDS (Arbitrary Angled/Chamfer Bend)
MSABND_MDS (Arbitrary Angled/Chamfer Bend)
Symbol
Available in ADS
Parameters
Fi gure 2-1. Physi cal Layout
W Conductor Width mil 10.0
M Miter = X/D
For M less than sin2(ANG/2), the reference plane is at the interior corner of the bend.
For M greater than sin2(ANG/2), the reference plane is removed by a distance L from
the interior corner of the bend, where:
None 0.5
L
W
ANG ( ) sin
--------------------------- 2M ANG ( ) cos 1 + ( ) =
MSABND_MDS (Arbitrary Angled/Chamfer Bend) 2-95
Design Limits
1
r
50 (
r
= substrate di el ectri c constant)
I f M i s 0.5 and ANG i s 90 degrees, i nstead use the model for the chamfered 90 degree
bend MSBEND.
I f M i s 0.0 and ANG i s 90 degrees, i nstead use the model for the squar e corner
MSCRNR.
Notes
A substrate must be named i n the SUBST fi el d and a mi crostri p substrate defi ni ti on
that corresponds to thi s name must appear on the ci rcui t page.
2-96 MSIND (Microstrip Round Spiral Inductor)
MSIND (Microstrip Round Spiral Inductor)
Symbol
Illustration
Parameters
Range of Usage
Ri > W/2
N > 1
N Number of turns None 2.0
Ri Inner radius measured to the center of the conductor mil 50.0
W1 (for Layout option) Width of strip ending at pin 1 mil 0.0
W2 (for Layout option) Width of strip ending at pin 2 mil 0.0
S
W
RI
C
MSIND (Microstrip Round Spiral Inductor) 2-97
Notes/Equations
1. The frequency-domai n anal yti cal model i s a l ow-pass, seri es R-L and shunt C
structure. Each R-L-C secti on corresponds to one turn of the i nductor. The
i nductor L of each secti on i s cal cul ated usi ng the formul as of Remke and
Burdi ck, whi ch do i ncl ude ground pl ane i nductance. Formul as gi ven by
Pettenpaul and hi s co-authors are used to cal cul ate the seri es resi stance R.
These formul as provi de a smooth transi ti on from dc resi stance to resi stance due
to ski n effect at hi gh frequenci es. The val ue of the shunt capaci tance C i s based
on coupl ed transmi ssi on l i ne theory. Di el ectri c l osses are not i ncl uded.
2. Ri i s measured to the center of the conductor.
thermal noi se).
References
[1] E. Pettenpaul , H. Kapusta, A. Wei sgerber, H. Mampe, J. Lugi nsl and, and I .
Wol ff. CAD Models of Lumped Elements on GaAs up to 18 GHz, I EEE
Transacti ons on Mi crowave Theory and Techni ques, Vol . 36, No. 2, February
1988, pp. 294-304.
[2] R. L. Remke and G. A. Burdi ck. Spiral I nductors for Hybrid and Microwave
Applications, Proc. 24th El ectron Components Conference, Washi ngton, D.C.,
May 1974, pp. 152-161.
2-98 MSLIT (Microstrip Slit)
MSLIT (Microstrip Slit)
Symbol
Illustration
Parameters
Range of Usage
D (0.9 W) or (W 0.01 H) whi chever i s smal l er
L H
where
= wavel ength i n the di el ectri c
Notes/Equations
1. The frequency-domai n anal yti cal model consi sts of a stati c, l umped, equi val ent
ci rcui t. The equi val ent ci rcui t parameters are cal cul ated based on the
W Width mil 25.0
D Depth of slit mil 15.0
L Length of slit mil 10.0
L
10
----- - <
0.01
W
H
----- 100
MSLIT (Microstrip Slit) 2-99
expressi ons gi ven by Hoefer. The reference pl ane of the l umped model i s at the
center of the sl i t. Two reference pl ane shi fts are added to move the reference
pl ane to the outsi de edge of the sl i t, so that they are coi nci dent wi th the l ayout
di mensi ons. These reference pl ane shi fts are model ed usi ng a MLI N mi crostri p
model that i ncl udes l oss and di spersi on. The characteri sti cs of the mi crostri p
l i nes are cal cul ated based on the constri cted wi dth of the sl i t W-D. The formul as
are gi ven bel ow, where Z
o
and
eff
are cal cul ated for wi dth W; Z
o
and
eff
are
cal cul ated for wi dth W-D; and, C
gap
i s the gap capaci tance associ ated wi th a gap
of l ength L and wi dth 2D (c
o
i s the vel oci ty of l i ght i n ai r).
thermal noi se).
References
[1] E. Hammerstad, Computer-Ai ded Desi gn of Mi crostri p Coupl es wi th Accurate
Di sconti nui ty Model s, I EEE MTT Symposium Digest, June 1981, pp. 54-56.
[2] W. J. R. Hoefer, Fi ne Tuni ng of Mi crowave I ntegrated Ci rcui ts Through
Longi tudi nal and Transverse Sl i ts of Vari abl e Length, NTZ (German), Vol .30,
May 1977, pp. 421-424.
[3] W. J. R. Hoefer, Theoreti cal and Experi mental Characteri zati on of Narrow
Transverse Sl i ts i n Mi crostri p, NTZ (German), Vol . 30, Jul y 1977, pp. 582-585.
[4] W. J. R. Hoefer, Equi val ent Seri es I nducti vi ty of a Narrow Transverse Sl i t i n
Mi crostri p, MTT Transactions, Vol . MTT- 25, October 1977, pp. 822-824.
L
H
------- -
0
2
--------- 1
Z
o
Z
o
--------
eff
eff
-----------
\ .
|
| |
=
C
s
C
gap
2
------------- =
C
p
eff
L
2c
0
Z
0
------------------- =
2-100 MSLIT (Microstrip Slit)
Equivalent Circuit
Z
o
Z
o
C
s
C
p
C
p
L/2
L/2
L
MSOBND_MDS (Optimally Chamfered Bend (90-degree)) 2-101
MSOBND_MDS (Optimally Chamfered Bend (90-degree))
Symbol
Available in ADS
Parameters
Range of Usage
2.5
r
25 (
r
= substrate di el ectri c constant)
Frequency (GHz) H (mm) 24
0.3 < W/H < 2.75
Notes
Thi s component i s a 90-degree angl e bend that i s chamfered accordi ng to thi s
formul a:
I n thi s formul a, mi ter (M) i s defi ned as .
Therefore, i n the Physi cal Layout drawi ng on the next page, L = W*(M/50 1)
A substrate must be named i n the SUBST fi el d and a mi crostri p substrate defi ni ti on
that corresponds to thi s name must appear on the ci rcui t page.
W Conductor Width mil 10.0
M 52 65 1.35
W
H
-----
\ .
| |
exp + =
M
X
D
----100 =
2-102 MSOBND_MDS (Optimally Chamfered Bend (90-degree))
Fi gure 2-2. Physi cal Layout
MSOP (Microstrip Symmetric Pair of Open Stubs) 2-103
MSOP (Microstrip Symmetric Pair of Open Stubs)
Symbol
Illustration
Parameters
W1 Width of input line mil 10.0
D1 Distance between centerlines of input line and stub-pair mil 5.0
W2 Width of output line mil 10.0
D2 Distance between centerlines of output line and of stub-pair mil 5.0
Ws Width of stubs mil 10.0
Ls Combined length of stubs mil 30.0
C
t
Ls
Ws
2-104 MSOP (Microstrip Symmetric Pair of Open Stubs)
Range of Usage
Ws > 0
Ls > 0
where
Notes/Equations
1. The frequency-domai n anal yti cal model i gnores conductor l osses, di el ectri c
l osses, and metal thi ckness.
2. A posi ti ve (negati ve) D1 i mpl i es that the i nput l i ne i s bel ow (above) the center
of the stub-pai r.
A posi ti ve (negati ve) D2 i mpl i es that the output l i ne i s above (bel ow) the center
of the stub-pai r.
thermal noi se).
References
[1] G. DI nzeo, F. Gi anni ni , C. Sodi , and R. Sorrenti no. Method of Anal ysi s and
Fi l teri ng Properti es of Mi crowave Pl anar Networks, I EEE Transactions on
Microwave Theory and Techniques, Vol . MTT-26, No. 7, Jul y 1978, pp. 467-471.
0.01
W1
H
-------- 100
0.01
W2
H
-------- 100
MSSPLC_MDS (MDS Microstrip Center-Fed Rectangular Spiral Inductor) 2-105
MSSPLC_MDS (MDS Microstrip Center-Fed Rectangular Spiral Inductor)
Symbol
Illustration
Available in ADS
Parameters
N Number of turns (must be an integer) Integer 2
OD
Overall dimension, OD_min > (2N+1) (W+S)
mil 62.0
W
Conductor width, OD_min > (2N+1) (W+S)
mil 4.0
S Conductor spacing, OD_min > (2N+1) (W+S) mil 2.0
OD
OD
S
W
2-106 MSSPLC_MDS (MDS Microstrip Center-Fed Rectangular Spiral Inductor)
Range of Usage
OD > (2N+1)(W+S)
Er < 50
10 H > W > 0.1 H
10 H > S > 0.1 H
Frequency < 2 fo, where fo i s the open-ci r cui t resonant frequency of the i nductor
Notes/Equations
1. Noi se that i s contri buted by thi s component appears i n al l si mul ati ons.
References
[1] H. Wheel er, Formul as for the Ski n Effect, Proc. I RE, Vol . 30 Sept. 1941, pp.
412-424
MSSPLR_MDS (MDS Microstrip Round Spiral Inductor) 2-107
MSSPLR_MDS (MDS Microstrip Round Spiral Inductor)
Symbol
Illustration
Available in ADS
Parameters
N Number of turns, Ro_min > (N+0.5) (W+S) Integer 3
Ro Outer radius, Ro_min > (N+0.5) (W+S) mil 62.0
W Conductor width, Ro_min > (N+0.5) (W+S) mil 4.0
S Conductor spacing, Ro_min > (N+0.5) (W+S) mil 2.0
2-108 MSSPLR_MDS (MDS Microstrip Round Spiral Inductor)
Range of Usage
RO > (N+0.5)(W+S)
1 < Er < 50
10 H > W > 0.1 H
10 H > S > 0.1 H
Notes/Equations
References
412-424
MSSPLS_MDS (MDS Microstrip Side-Fed Rectangular Spiral Inductor) 2-109
MSSPLS_MDS (MDS Microstrip Side-Fed Rectangular Spiral Inductor)
Symbol
Illustration
Available in ADS
Parameters
N
Number of turns, OD_min > (2N+1 (W+S)
Integer 2
W
Conductor width, OD_min > (2N+1 (W+S)
mil 62.0
S
Conductor spacing, OD_min > (2N+1 (W+S)ts
mil 4.0
OD Overall dimension, OD_min > (2N+1) (W+S) mil 2.0
S
W
OD
OD
2-110 MSSPLS_MDS (MDS Microstrip Side-Fed Rectangular Spiral Inductor)
Range of Usage
OD > (2N+1)(W+S)
Er < 50
10 H > W

> 0.1 H
10 H > S > 0.1 H
Notes/Equations
References
412-424
MSTEP (Microstrip Step in Width) 2-111
MSTEP (Microstrip Step in Width)
Symbol
Illustration
Parameters
Range of Usage
where
ER = di el ectri c constant (from associ ated Subst)
Notes/Equations
1. Al though the references l i sted here have val i dated the model for ER

10, i t
does not mean that the model i s i naccurate for ER > 10. A warni ng message wi l l
be i ssued when ER > 13.1.
W1 Conductor width at pin 1 mil 25.0
0.01
W1
H
-------- 100 < <
0.01 <
W2
H
-------- 100 <
2-112 MSTEP (Microstrip Step in Width)
2. The frequency-domai n anal yti cal model i s deri ved from a TEM (fundamental
mode) pl anar wavegui de model of the di sconti nui ty. I n the deri vati on, the
pl anar wavegui de model i s transformed i nto a rectangul ar wavegui de model ,
and the expressi on for the seri es i nductance, L
s
, i s formul ated based on an
anal ysi s of the current concentrati on at the di sconti nui ty. Thi s formul a i s
documented i n Handbook of Microwave I ntegrated Circuits by R. Hoffman. The
reference pl ane shi ft, l , i s cal cul ated based on an anal ysi s of the scattered
el ectri c fi el ds at the front edge of the wi der conductor. I n addi ti on, di spersi on i s
accounted for i n the model .
thermal noi se).
6. I n l ayout, MSTEP al i gns the centerl i nes of the stri ps.
7. I f you create your i ni ti al desi gn usi ng l ayout and want to i ncorporate MSTEP
components, you shoul d i ni ti al l y l eave them out of your l ayout. Create a
schemati c from your l ayout usi ng the Schemati c > Generate/Update Schemati c
menu from the l ayout wi ndow. Then add the MSTEP components i nto the
schemati c. Once the MSTEP's are i n your schemati c, you can put them i nto
your l ayout by usi ng the Layout > Generate/Update Layout menu from the
schemati c wi ndow. Thi s procedure i s necessary because the MSTEP component
has two pi ns at the same l ocati on i n l ayout and i t i s very di ffi cul t to manual l y
connect the component correctl y to adjacent MLI N components.
References
[1] R. K. Hoffman, Handbook of Microwave I ntegrated Circuits, Artech House,
1987, pp. 267-309.
[2] G. Kompa, Desi gn of Stepped Mi crowave Components, The Radio and
Electronic Engineer, Vol . 48, No. 1/2, January 1978, pp. 53-63.
[3] N. H. L. Koster and R. H. Jansen. The Mi crostri p Step Di sconti nui ty: A
Revi sed Descri pti on, I EEE Transactions on Microwave Theory and Techniques,
Vol . MTT 34, No. 2, February 1986, pp. 213-223 (for compari son onl y).
MSTEP (Microstrip Step in Width) 2-113
Equivalent Circuit
Z
1

eff1
(f)
l l
Z
2

eff2
(f)
L
S
2-114 MSUB (Microstrip Substrate)
MSUB (Microstrip Substrate)
Symbol
Illustration
Supported vi a model i ncl ude fi l e i n RFDE
Parameters
H Substrate thickness mil 10.0
Er Relative dielectric constant None 9.6
Mur Relative permeability None 1
Hu Cover height None 3.9e+034
T Conductor thickness mil 0
TanD Dielectric loss tangent None 0
Rough Conductor surface roughness; RMS value; refer to note 7 mil 0
Cond1 (for Layout option) Layer on which the microstrip metallization will be drawn
in layout
None cond
Cond2 (for Layout option) Layer on which the air bridges will be drawn None cond2
MSUB (Microstrip Substrate) 2-115
Netlist Format
Substrate model statements for the ADS ci rcui t si mul ator may be stored i n an
external fi l e.
model substratename MSUB [parm=value]*
The model statement starts wi th the requi red keyword model. I t i s fol l owed by the
substratename that wi l l be used by mi crostri p components to refer to the model . The
thi rd parameter i ndi cates the type of model ; for thi s model i t i s MSUB. The rest of
the model contai ns pai rs of substrate model parameters and val ues, separated by an
equal si gn. The name of the model parameter must appear exactl y as shown i n the
parameters tabl e-these names are case sensi ti ve. Model parameters may appear i n
any order i n the model statement. For more i nformati on about the ADS ci rcui t
si mul ator netl i st format, i ncl udi ng scal e factors, subci rcui ts, vari abl es and equati ons,
refer to ADS Si mul ator I nput Syntax i n the Circuit Simulation manual .
Exampl e:
model Msub1 MSUB H=10 mil Er=9.6 Mur=1 Cond=1.0E50 \
Hu=3.9e+34 mil T=0 mil Tand=0 Rough=0 mil
Notes/Equations
For RFDE Users I nformati on about thi s model must be provi ded i n a model fi l e; refer
to the Netlist Format secti on.
1. MSUB i s requi red for al l mi crostri p components except MRI NDSBR and
MRI NDELM.
Diel1 (for Layout option) Layer on which the dielectric capacitive areas will be
drawn
None diel
Diel2 (for Layout option) Layer on which the via between Cond and Cond2 masks
will be drawn
None diel2
Hole (for Layout option) Layer on which the via layer used for grounding will be
drawn
None hole
Res (for Layout option) Layer on which the resistive mask will be drawn None resi
Bond (for Layout option) Layer on which the wire bridge will be drawn None bond
2-116 MSUB (Microstrip Substrate)
2. Conductor l osses are accounted for when Cond < 4.110
17
S/m and T > 10
-9
.
Gol d conducti vi ty i s 4.110
7
S/m. Rough modi fi es l oss cal cul ati ons.
Conducti vi ty for copper i s 5.810
7
.
3. Parameters Cond1, Cond2, Di el 1, Di el 2, Hol e, and Res control the l ayer on
whi ch the Mask l ayers are drawn. These are l ayout-onl y parameters and are
not used by the si mul ator.
4. Mi crostri p cover hei ght effect i s defi ned i n the Hu parameter. MCFI L, MCLI N,
MLEF, MLI N, MLOC, and MLSC components support mi crostri p cover effect
(MACLI N and MACLI N3 components do not support thi s cover effect).
5. I f the Hu parameter of the substrate i s l ess than 100 Thi ckness_of_substrate,
the parameters Wal l 1 and Wal l 2 must not be l eft bl ank i n MLEF, MLI N, MLOC,
or MLSC when used wi th MSUB, or an i mproper i mpedance cal cul ati on wi l l
occur.
6. The mi crostri p cover uses a perturbati onal techni que based on the assumpti on
that a si gni fi cant porti on of energy i s i n the substrate between the conductor
and the l ower ground. I t assumes that a mi crostri p l i ne i s beneath i t. The
mi crostri p cover Hu and the Er parameters were not i ntended to be used i n the
l i mi ti ng case where the confi gurati on of the MLI N wi th sub and cover
converges to a stri pl i ne topol ogy. Therefore, Hu must al ways be taken much
l arger than H and T.
7. The Rough parameter i s used i n the fol l owi ng equati on i n MDS and ADS:
Loss_factor = 1 + (2/) atan ( We Rough
2
)
where atan i s arctangent; We i s the factor i n the surface roughness formul a,
whi ch i s some constant.
We= 0.7 U0 Ur
where
U0 = magneti c permeabi l i ty constant
Ur = rel ati ve magneti c permeabi l i ty
= conducti vi ty constant (4.1e7 for gol d)
So i f
Rough factor = 0, then atan (0) = 0 and so Loss_factor = 1
MSUB (Microstrip Substrate) 2-117
I f
Rough factor = l arge number, then atan (l arge number) =
cl ose to /2 and so Loss_factor= 1+ 2/ (/2) = 2
So
Loss_factor = between 1 to 2 for Rough = from 0 to i nfi ni ty.
Loss ( for conductor wi th surface roughness) =
Loss ( for perfectl y smooth conductor) Loss_factor
= Attenuati on (nepers/m)
References
[1] For the Rough parameter: Hammerstead and Bekkadal , Mi crostri p Handbook,
ELAB report STF44 A74169, page 7.
2-118 MSUBST3 (Microstrip 3-Layer Substrate)
MSUBST3 (Microstrip 3-Layer Substrate)
Symbol
Illustration
Parameters
Er[1] Dielectric constant None 4.5
H[1] Substrate height mil 10
TanD[1] Dielectric loss tangent None 0
T[1] Conductor thickness mil 0
Cond[1] Conductor conductivity S/meter 1.0e+50
Er[2] Dielectric constant None 4.5
H[2] Substrate height mil 10
TanD[2] Dielectric loss tangent None 0
T[2] Conductor thickness None 0
Cond[2] Conductor conductivity S/meter 1.0e+50
LayerName[1] (for Layout option) Layer to which cond is mapped None cond
[2] [2] [2], TanD[2],
[1]
[1], [1] TanD[1],
Cond[2]
Cond[1]
LayerViaName[1]
LayerName[2]
LayerName[1]
MSUBST3 (Microstrip 3-Layer Substrate) 2-119
Netlist Format
external fi l e.
model substratename Substrate N=3 [parm=value]*
substratename that wi l l be used by mi crostri p components to refer to the model . The
thi rd parameter i ndi cates the type of model ; for thi s model i t i s Substrate. The fourth
parameter says that thi s i s a 3-l ayer substrate. The rest of the model contai ns pai rs of
substrate model parameters and val ues, separated by an equal si gn. The name of the
model parameter must appear exactl y as shown i n the parameters tabl e-these names
are case sensi ti ve. Model parameters may appear i n any order i n the model
statement. For more i nformati on about the ADS ci rcui t si mul ator netl i st format,
i ncl udi ng scal e factors, subci rcui ts, vari abl es and equati ons, refer to ADS Si mul ator
I nput Syntax i n the Circuit Simulation manual .
Exampl e:
model MSubst1 Substrate N=3 \
Er[1]=4.5 H[1]=10 mi l TanD[1]=0 T[1]=0 mi l Cond[1]=1.0E+50 \
Er[2]=4.5 H[2]=10 mi l TanD[2]=0 T[2]=0 mi l Cond[2]=1.0E+50
Notes/Equations
1. MSUBST3 i s requi red for MRI NDSBR and MRI NDELM components.
MSUBST3 i s not i ntended for components usi ng a si ngl e metal l ayer.
MSUBST3 i s i ntended for MRI NDSBR and MRI NDELM onl y and wi l l generate
errors i f used wi th other components.
2. Conductor l osses are accounted for when Cond < 4.110
17
S/m and T > 10
-9
.
Gol d conducti vi ty i s 4.110
7
7.
LayerName[2] (for Layout option) Layer to which cond2 is mapped None cond2
LayerViaName[1] (for Layout option) Layer to which via hole is mapped None diel2
2-120 MTAPER (Microstrip Width Taper)
MTAPER (Microstrip Width Taper)
Symbol
Illustration
Parameters
Range of Usage
Er 128
0.01 H (W1, W2) 100 H
where
Notes/Equations
1. The frequency-domai n anal yti cal model i s a mi crostri p l i ne macro-model
devel oped by Agi l ent. The taper i s constructed from a seri es of straight
mi crostri p secti ons of vari ous wi dths that are cascaded together. The mi crostri p
l i ne model i s the MLI N model . The number of secti ons i s frequency dependent.
Di spersi on, conductor l oss, and di el ectri c l oss effects are i ncl uded i n the
mi crostri p model .
MTAPER (Microstrip Width Taper) 2-121
thermal noi se).
2-122 MTEE (Microstrip T-Junction)
MTEE (Microstrip T-Junction)
Symbol
Illustration
Parameters
Range of Usage
0.05 H W1 10 H
0.05 H W2 10 H
0.05 H W3 10 H
Er 20
Wl argest/Wsmal l est 5
where
Wl argest, Wsmal l est are the l argest, smal l est wi dth among W2, W2, W3
f(GHz) H (mm) 0.4 Z0
Subst Microstrip substrate name
W1 Conductor width at pin 1 mil
MTEE (Microstrip T-Junction) 2-123
where
Z0 i s the characteri sti c i mpedance of the l i ne wi th Wl argest
Notes/Equations
model modi fi es E. Hammerstad model formul a to cal cul ate the Tee juncti on
di sconti nui ty at the l ocati on defi ned i n the reference for wi de range val i di ty. A
reference pl an shi ft i s added to each of the ports to make the reference pl anes
consi stent wi th the l ayout.
2. The center l i nes of the stri ps connected to pi ns 1 and 2 are assumed to be
al i gned.
thermal noi se).
References
[1] E. Hammerstad, Computer-Ai ded Desi gn of Mi crostri p Coupl ers Usi ng
Accurate Di sconti nui ty Model s, MTT Symposium Digest, 1981.
Equivalent Circuit
l
1
l
2
Z
1
X
a
X
a
Z
2
X
b
n = 1
2-124 MTEE_ADS (Libra Microstrip T-Junction)
MTEE_ADS (Libra Microstrip T-Junction)
Symbol
Illustration
Parameters
Range of Usage
W1 + W3 0.5
W2 + W3 0.5
0.10 H W1 10 H
0.10 H W2 10 H
0.10 H W3 10 H
Er 128
where
MTEE_ADS (Libra Microstrip T-Junction) 2-125
Notes/Equations
model presented by Hammerstad i s used to cal cul ate the di sconti nui ty model at
the l ocati on defi ned i n the reference. A reference pl an shi ft i s then added to
each of the ports to make the reference pl anes consi stent wi th the l ayout.
Di spersi on i s accounted for i n both the reference pl an shi fts and the shunt
susceptance cal cul ati ons usi ng the formul as of Ki rschni ng and Jansen.
2. The center l i nes of the stri ps connected to pi ns 1 and 2 are assumed to be
al i gned.
4. The MTEE_ADS (Li bra) component i s the recommended model and i n general
behaves better when compared to the MTEE (MDS) component model ,
parti cul arl y wi th respect to passi vi ty of the model . Al ternati vel y, an EM
(Momentum) based model can be generated usi ng the Model Composer tool .
thermal noi se).
References
[1] E. Hammerstad, Computer-Ai ded Desi gn of Mi crostri p Coupl ers Usi ng
Accurate Di sconti nui ty Model s, MTT Symposium Digest, 1981.
[2] M. Ki rschni ng and R. H. Jansen, Electronics Letters, January 18, 1982.
2-126 MTEE_ADS (Libra Microstrip T-Junction)
Equivalent Circuit
l
3
jB
t
()
l
1
l
2
l:na l:nb
Z
3
Z
2
Z
1
MTFC (Microstrip Thin Film Capacitor) 2-127
MTFC (Microstrip Thin Film Capacitor)
Symbol
Illustration (Layout):
Parameters
W Dielectric width common to both metal plates mil 50.0
L Dielectric length common to both metal plates mil 50.0
CPUA Capacitance/unit area
pf/mm
2
300.0
T Thickness of capacitor dielectric mil 0.2
RsT Sheet resistance of top metal plate Ohm 0.0
W
1 2
L
DO
COB
COT
TT
T
TB
Microstrip Substrate
Top-
plate
Metal
Dielectric
Via
DO
COT
COB
Bottom-
plate
Metal
Capacitor
Dielectric
1
2
2-128 MTFC (Microstrip Thin Film Capacitor)
Range of Usage
0.0l H (W + 2.0 COB) 100.0 H
1 Er 128
COB > 0
T > 0
where
Notes/Equations
1. Thi s i s a di stri buted MI M capaci tor model based on the
coupl ed-transmi ssi on-l i ne approach. Conductor l oss for both metal pl ates i s
cal cul ated from the sheet resi stance (ski n-effect i s not model ed.) Di el ectri c l oss
i s cal cul ated from the l oss tangent. (The TanD speci fi cati on appl i es to the
di el ectri c between the two metal pl ates and not to the MSUB substrate.)
Coupl i ng capaci tance from both metal pl ates to the ground pl ane i s accounted
for.
2. Thi ckness of the di el ectri c T i s requi red for cal cul ati ng the mutual coupl i ng
between the two metal pl ates. Thi ckness of the two metal pl ates, TT and TB,
are used for cal cul ati ng mi crostri p parameters.
3. The model does not i ncl ude a connecti on (such as an ai r-bri dge) from the top
metal (pi n 2) to the connecti ng transmi ssi on l i ne. I t must be i ncl uded separatel y
by the user for si mul ati on as wel l as l ayout purposes.
RsB Sheet resistance of bottom metal plate Ohm 0
TT Thickness of top metal plate mil 0
TB Thickness of bottom metal plate mil 0
COB Bottom conductor overlap mil 0
COT (for Layout option) Top conductor overlap mil 0
DO (for Layout option) Dielectric overlap mil 0
MTFC (Microstrip Thin Film Capacitor) 2-129
thermal noi se).
8. I n the l ayout, the top metal wi l l be on l ayer cond2, the bottom metal on l ayer
cond, the capaci tor di el ectri c on l ayer diel, and the di el ectri c vi a l ayer on l ayer
diel2.
References
[1] J. P. Mondal , An Experi mental Veri fi cati on of a Si mpl e Di stri buted Model of
MI M Capaci tors for MMI C Appl i cati ons, I EEE Transactions on Microwave
Theory Tech., Vol . MTT-35, No.4, pp. 403-408, Apri l 1987.
Equivalent Circuit
L
11
G
C
12
R
1
L
22
R
2
L
12
C
20
G
C
12
C
10
L
11
R
1
C
12
G
Bottom
plate
Top
plate
Ground
plane
L
11
= inductance/unit length of the top plate
L
22
= inductance/unit length of the bottom plate
L
12
= mutual inductance between the plates/units length of the capacitor
R
1
= loss resistance/unit length of the top plate
R
2
= loss resistance/unit length of the bottom plate
G = loss conductance of the dielectric/unit length of the capacitor
C
12
= capacitance/unit length of the capacitor
C
10
= capacitance with respect to ground/unit length of the top plate (due to the substrate effects)
C
20
= capacitance with respect to ground/unit length of the bottom plate (due to the substrate effects)
2-130 RIBBON (Ribbon)
RIBBON (Ribbon)
Symbol
Illustration
Parameters
Rho Metal resistivity (relative to gold) None 1.0
AF (for Layout option) Arch factor; ratio of distance between bond points to actual
ribbon length
None 0.5
CO (for Layout option) Conductor overlap; distance from edge connector mil 5.0
A1 (for Layout option) Angle of departure from first pin None 30.0
A2 (for Layout option) Angle between direction of first and second pins None 30.0
BandLayer (for Layout option) Layer on which the wire/ribbon is drawn None bond
RIBBON (Ribbon) 2-131
Notes/Equations
1. Al though thi s component i s i ncl uded i n the Microstrip Components l i brary, i t
does not use a mi crostri p substrate (MSUB).
4. The ri bbon bond l ayer to the conductor l ayer transi ti on i s drawn on the diel2
l ayer. The wi dth of the diel2 l ayer i s CO, the conductor offset. I f CO i s 0, the
transi ti on i s drawn as a zero wi dth pol ygon. The transi ti on i s onl y for l ayout
purposes and i s not taken i nto account i n the ci rcui t si mul ator.
thermal noi se).
Equivalent Circuit
2-132 TFC (Thin Film Capacitor)
TFC (Thin Film Capacitor)
Symbol
Illustration (Layout)
Parameters
T Dielectric thickness mil 0.2
Er Dielectric constant None 5.33
CO (for Layout option) Conductor overlap mil 5.0
DO (for Layout option) Dielectric overlap mil 5.0
TFC (Thin Film Capacitor) 2-133
Range of Usage
1 <Er < 50
0.005T < W < 1000T
0.01H < W < 100H
Notes/Equations
1. The frequency-domai n anal yti cal model i s a seri es R-C, l umped component
network. The conductor l osses wi th ski n effect and di el ectri c l osses are model ed
by the seri es resi stance. The paral l el pl ate capaci tance i s model ed by the seri es
capaci tance.
3. For a di stri buted model , use MTFC i nstead of TFC.
thermal noi se).
8. Pi ns 1 and 2 are on the mask l ayer cond for pri mary metal l i zati on. The top of
the capaci tor i s formed on the cond2 l ayer, wi th the conductor overl appi ng the
connecti ng l i ne at pi n 2 by CO.
References
[1] K. C. Gupta, R. Garg, R. Chadha, Computer-Aided Design of Microwave
DielLayer (for Layout option) Layer on which the dielectric is drawn None diel
Cond2Layer (for Layout option) Layer on which the airbridge is drawn None cond2
2-134 TFC (Thin Film Capacitor)
Equivalent Circuit
Additional Illustration
R C
TFR (Thin Film Resistor) 2-135
TFR (Thin Film Resistor)
Symbol
Illustration
Parameters
Range of Usage
0.01 H W 100 H
where
Notes/Equations
1. The frequency-domai n anal yti cal model i s a l ossy mi crostri p l i ne model
devel oped by Agi l ent. The mi crostri p l i ne model i s based on the formul a of
Hammerstad and Jensen. Conductor l oss wi th ski n effect i s i ncl uded; however,
di spersi on, di el ectri c l oss and thi ckness correcti on are not i ncl uded.
Rs Sheet resistivity Ohm 50.0
Freq Frequency for scaling sheet resistivity Hz 0
CO (for Layout option) Conductor offset; distance from edge of conductor mil 5.0
2-136 TFR (Thin Film Resistor)
2. I f Freq i s set to a val ue other than zero, then Rs i s scal ed wi th frequency as
fol l ows:
Rs (f) = Rs (Freq) (f/Freq) (for mi crostri p)
I f Freq=0, then Rs i s constant wi th respect to frequency. Setti ng Freq=0 i s
correct i n most cases.
thermal noi se).
References
VIA (Tapered Via Hole in Microstrip) 2-137
VIA (Tapered Via Hole in Microstrip)
Symbol
Illustration
Parameters
Range of Usage
H 2 (gr eater of D1 or D2)
H <<
where = wavel ength i n the di el ectri c
D1 Diameter at pin n1 mil 15.0
D2 Diameter at pin n2 mil 10.0
T Conductor thickness mil 0.15
W (for Layout option) Width of conductor attached to via hole mil 25.0
Cond1Layer (for Layout option) Layer on which the top transitional metal is drawn None cond
HoleLayer (for Layout option) Layer on which the via-hole is drawn None hole
Cond2Layer (for Layout option) Layer on which the bottom transitional metal is drawn None cond2
2-138 VIA (Tapered Via Hole in Microstrip)
Notes/Equations
1. The frequency-domai n anal yti cal model i s a seri es, l umped i nductance as
shown i n the symbol . Conductor and di el ectr i c l osses ar e not model ed. The
model was devel oped by Vi jai K. Tri pathi for Agi l ent.
2. I n addi ti on to the two ci rcl es on the conducti ng l ayers, the artwork i ncl udes a
ci rcl e for the vi a-hol e on the hol e l ayer. The di ameter for the vi a-hol e i s set by
D1, the di ameter at pi n 1.
3. Al though thi s component i s i ncl uded i n the Mi crostri p Components l i brary, i t
4. The el ectri cal reference pl ane for the VI A model i s l ocated at the center of the
VI A.
5. I mproved si mul ati on accuracy can be obtai ned by usi ng overl appi ng
transmi ssi on l i ne segments and pad geometry.
6. As the vi a i s a hol l ow metal shape, the conductor thi ckness T wi l l i nfl uence the
vi a i nductance L. Because of thi s, i t i s necessary to fi l l i n the vi a conductor
thi ckness T.
VIA2 (Cylindrical Via Hole in Microstrip) 2-139
VIA2 (Cylindrical Via Hole in Microstrip)
Symbol
Illustration
Parameters
Range of Usage
100 M < H < 635 M
D Hole diameter mil 15.0
T Metal thickness mil 0.15
W Width or diameter of the via pad mil 25.0
D
T
H
0.2
D
H
---- - 1.5 < <
0 T
D
2
---- <
2-140 VIA2 (Cylindrical Via Hole in Microstrip)
W > D
where
T = conductor thi ckness
Notes/Equations
1. The frequency-domai n anal yti cal model i s a seri es R-L, l umped component
network as shown i n the symbol . The model equati ons are based on the
numeri cal anal ysi s and formul a of Gol dfarb and Pucel . The conductor l oss wi th
ski n effect i s i ncl uded i n the resi stance cal cul ati on. The model equati ons
provi de a smooth transi ti on from dc resi stance to resi stance due to ski n effect at
hi gh frequenci es. Di el ectri c l oss i s not i ncl uded i n the model .
thermal noi se).
VI A.
thi ckness T.
1
W
H
----- 2.2 < <
VIA2 (Cylindrical Via Hole in Microstrip) 2-141
References
[1] M. Gol dfarb and R. Pucel . Model i ng Vi a Hol e Grounds i n Mi crostri p, I EEE
Microwave and Guided Wave Letters, Vol . 1, No. 6, June 1991, pp. 135-137.
2-142 VIAGND (Cylindrical Via Hole to Ground in Microstrip)
VIAGND (Cylindrical Via Hole to Ground in Microstrip)
Symbol
Illustration
Available in ADS
Parameters
D Hole diameter mil 15.0
T Metal thickness mil 0.15
W Width or diameter of the via pad mil 25.0
HoleLayer (for Layout option) Layer on which the Via-hole is drawn None hole
PO (for Layout option) Pad offset from connection pin mil 0
Pad Pad shape None None
D
T
H
VIAGND (Cylindrical Via Hole to Ground in Microstrip) 2-143
Range of Usage
100 M < H < 635 M
W > D
where
T = conductor thi ckness
Notes/Equations
1. The frequency-domai n anal yti cal model i s a seri es R-L, l umped component
network as shown i n the symbol . The model equati ons are based on the
numeri cal anal ysi s and formul a of Gol dfarb and Pucel . The conductor l oss wi th
ski n effect i s i ncl uded i n the resi stance cal cul ati on. The model equati ons
provi de a smooth transi ti on from dc resi stance to resi stance due to ski n effect at
hi gh frequenci es. Di el ectri c l oss i s not i ncl uded i n the model .
thermal noi se).
VI A.
thi ckness T.
0.2
D
H
---- - 1.5 < <
0 T
D
2
---- <
1
W
H
----- 2.2 < <
2-144 VIAGND (Cylindrical Via Hole to Ground in Microstrip)
9. The parameter PO i s meant for l ayout purpose onl y and has no effect on the
mathemati cal vi a model underneath.
References
[1] M. Gol dfarb and R. Pucel . Model i ng Vi a Hol e Grounds i n Mi crostri p, I EEE
Microwave and Guided Wave Letters, Vol . 1, No. 6, June 1991, pp. 135-137.
VIAFC (Via with Full-Circular Pads) 2-145
VIAFC (Via with Full-Circular Pads)
Symbol
Parameters
Range of Usage
H 2 x D
H < where i s wavel ength i n the di el ectri c
Dpad1 > D
Dpad2 > D
Notes
1. Thi s vi a i s si mi l ar to VI ASC except that the pads are compl ete ci rcl es.
D Diameter of via hole mil 15.0
Dpad1 (for Layout option) Width of pad at pin 1 mil 20.0
Angle (for Layout option) Angle between pads deg 0.0
Cond1Layer (for Layout option) Layer on which the top transitional metal is drawn None cond1
2-146 VIAFC (Via with Full-Circular Pads)
2. El ectri cal model for thi s vi a i s the same as VI A i n the ADS-equi val ent RF
l i brary.
VI A.
thi ckness T.
VIAHS (Via with Half-Square Pads) 2-147
VIAHS (Via with Half-Square Pads)
Symbol
Parameters
Range of Usage
H 2 x D
Dpad1 > D
Dpad2 > D
Notes
1. Thi s vi a i s si mi l ar to the exi sti ng VI A component i n the ADS-equi val ent RF
l i brary; but i t i s more fl exi bl e i n that the wi dths of the pads can be di fferent and
thei r ori entati ons can be of arbi trary angl es.
HoleLayer (for Layout option) Layer on which the via hole is drawn None hole
2-148 VIAHS (Via with Half-Square Pads)
2. El ectri cal model for thi s vi a i s the same as for VI A i n the ADS-equi val ent RF
l i brary.
VI A.
thi ckness T.
VIAQC (Via with Quasi-Circular Pads) 2-149
VIAQC (Via with Quasi-Circular Pads)
Symbol
Parameters
Range of Usage
H 2 x D
Dpad1 > D, W1
Dpad2 > D, W2
Notes
1. Thi s vi a i s si mi l ar to VI AHS but the pads are ci rcl es wi th one si de bei ng cut off
by the connecti ng transmi ssi on l i nes.
W1 (for Layout option) Width of transmission line at pin 1 mil 15.0
Dpad1 (for Layout option) Diameter of pad at pin 1 mil 20.0
2-150 VIAQC (Via with Quasi-Circular Pads)
l i brary.
VI A.
thi ckness T.
VIASC (Via with Semi-Circular Pads) 2-151
VIASC (Via with Semi-Circular Pads)
Symbol
Parameters
Range of Usage
H 2 x D
Dpad1 > D
Dpad2 > D
Notes
1. Thi s vi a i s si mi l ar to VI AHS but the pads are ci rcl es wi th one si de bei ng cut off
by the connecti ng transmi ssi on l i nes.
2-152 VIASC (Via with Semi-Circular Pads)
l i brary.
VI A.
thi ckness T.
VIASTD (Via with Smooth Tear Drop Pads) 2-153
VIASTD (Via with Smooth Tear Drop Pads)
Symbol
Parameters
Range of Usage
H 2 x D
H < , where i s wavel ength i n the di el ectri c
Dpad1 > D, W1
Dpad2 > D, W2
L1 > 0.5 x Dpad1
L2 > 0.5 x Dpad2
L1 (for Layout option) Length of tear drop on layer Cond1Layer mil 15.0
PO Pin offset from the via center. um 0
2-154 VIASTD (Via with Smooth Tear Drop Pads)
Notes
1. Thi s vi a i s si mi l ar to VI ATDD but the pads have smooth tear drop shapes. The
tear drops are tangenti al to the connecti ng transmi ssi on l i nes.
l i brary.
VI A.
thi ckness T.
6. When PO > 0, the pi n wi l l move outward al ong the teardrop and away from the
vi a center.
VIATTD (Libra Via Hole in Microstrip with Tear Drop Pads) 2-155
VIATTD (Libra Via Hole in Microstrip with Tear Drop Pads)
Symbol
Parameters
Range of Usage
H 2 x D
H < , where i s wavel ength i n the di el ectri c
Dpad1 > D, W1
Dpad2 > D, W2
L1 > 0.5 x Dpad1
L2 > 0.5 x Dpad2
PO Pin offset from the via center. um 0
2-156 VIATTD (Libra Via Hole in Microstrip with Tear Drop Pads)
Notes
1. Thi s vi a i s si mi l ar to VI AHS but the pads have tri angul ar tear drop shapes. The
tear drops are not tangenti al to the connecti ng transmi ssi on l i nes.
l i brary.
VI A.
thi ckness T.
6. When PO > 0, the pi n wi l l move outward al ong the teardrop and away from the
vi a center.
WIRE (Round Wire) 2-157
WIRE (Round Wire)
Symbol
Illustration
Parameters
D Wire diameter mil 1.0
L Wire length mil 50.0
AF (for Layout option) Arch factor; ratio of distance between two pins to wire length None 0.5
CO (for Layout option) Conductor offset; distance from edge of conductor mil 5.0
A1 (for Layout option) Angle of departure from first pin None 30.0
A2 (for Layout option) Angle between direction of first and second pins None 30.0
BondLayer (for Layout option) Layer on which the wire/ribbon is drawn None bond
TOP VIEW
2-158 WIRE (Round Wire)
Notes/Equations
2. Wi re and Ri bbon components serve as ai r bri dges that are paral l el to the
surface of the substrate. Thi s provi des a way to connect the center of MRI ND,
MRI NDNBR, and MSI ND components.
3. Bul k resi sti vi ty of gol d i s used for Rho = 2.44 mi crohm-cm.
thermal noi se).
8. The wi re bond l ayer to the conductor l ayer tr ansi ti on i s drawn on the diel2
l ayer. The wi dth of the diel2 l ayer i s CO, the conductor offset. I f CO i s zero, the
transi ti on i s drawn as a zero wi dth pol ygon. The transi ti on i s onl y for l ayout
purposes and i s not taken i nto account i n the ci rcui t si mul ator.
Equivalent Circuit
Introduction 3-1
Chapter 3: Multilayer Interconnects
Introduction
Di fferences between the Mul ti l ayer l i brary and the Pri nted Ci rcui t Board l i brary are
descri bed here.
The PCB l i brary was ori gi nal l y devel oped at the Uni versi ty of Oregon, and was
i ntegrated i nto EEsof s Li bra program i n 1992. Thi s l i brary i s based on a fi ni te
di fference method of sol vi ng a Poi sson equati on. I t requi res the structure to be
encl osed i n a metal box. I t assumes zero-thi ckness metal . Metal l oss i s cal cul ated
based on Zs. I t al so requi res the di el ectri c to be uni form. I t i s i ncl uded wi th the
purchase of ADS.
The mul ti l ayer l i brary was fi rst i ntegrated i nto MDS i n 1994. I t i s based on method
of moments and Green's functi on method. I t handl es arbi trary di el ectri c l ayers and
arbi trary metal thi ckness. Ski n effect resi stance matri x i s cal cul ated numeri cal l y. I t
has structures such as coupl ed tapers, coupl ed bends, coupl ed cross-overs, and
coupl ed sl anted l i nes. I t can be purchased from Agi l ent as an opti onal feature.
3-2 COMBINE2ML (Combine 2 Coupled-Line Components)
Multilayer Interconnects
COMBINE2ML (Combine 2 Coupled-Line Components)
Symbol
Parameters
Notes/Equations
1. Combi ni ng coupl ed-l i ne components al l ows you to create a component of more
coupl ed l i nes by combi ni ng several i ndi vi dual components i nto a si ngl e
component. For exampl e, to create 20 coupl ed l i nes, you can combi ne two 10-l i ne
components. Or, use them to combi ne smal l sets of l i nes i nstead of rei nserti ng
components wi th a greater number of l i nes.
2. You can combi ne coupl ed l i nes of constant wi dth and spaci ng, coupl ed l i nes wi th
varyi ng wi dth and spaci ng, and coupl ed pads and l i nes. The components to be
combi ned must refer to the same substrate, be paral l el , and be of the same
l ength. The substrate parameters must be constant (i .e. thei r val ues cannot
change duri ng the si mul ati on).
Coupled[1] First component to be combined None None
Coupled[2] Second component to be combined None None
S Spacing between Coupled[1] and Coupled[2] mil 5
RLGC_File Name of RLGC file None None
ReuseRLGC
Reuse RLGC matrices stored in RLGC_File: yes, no (refer to note 3)
None no
COMBINE2ML (Combine 2 Coupled-Line Components) 3-3
3. I f ReuseRLGC i s set to yes, the RLGC matri ces wi l l be read from the fi l e stored
on your di sk. I f you have changed the substrate parameters or component
parameters, setti ng ReuseRLGC to yes wi l l cause i nval i d resul ts. I n most cases,
a setti ng of no i s recommended. I f you know that the substrate and
transmi ssi on parameters are fi xed i n your si mul ati on, you can set ReuseRLGC
to yes to save some computer ti me, as the RLGC matri ces wi l l not be
re-cal cul ated.
Two scenari os are gi ven:
Fi l e name speci fi ed and no reuse
RLGC_Fi l e=aaa.txt
ReuseRLGC=no
then a fi l e named aaa.txt wi l l be wri tten i nto the project / data di rectory.
Fi l e name speci fi ed and reuse enabl ed
RLGC_Fi l e=aaa.txt
ReuseRLGC=yes
then, i f a fi l e named aaa.txt exi sts i t wi l l be read from the project / data
di rectory.
Note Readi ng an RLGC fi l e from another source i s not supported (i .e., the
RLGC fi l e that i s read when Reuse i s enabl ed must correl ate wi th the gi ven
substrate and component parameters).
3-line component
2-line component
S of combined component
Symbol
Parameters
Notes/Equations
re-cal cul ated.
Coupled[3] Third component to be combined None None
S[1] Spacing between Coupled[1] and Coupled[2] mil 5
ReuseRLGC
None no
RLGC_Fi l e="aaa.txt"
ReuseRLGC=no
ReuseRLGC=yes
di rectory.
Symbol
Parameters
Notes/Equations
l ength. The substrate parameters must be constant (i .e., thei r val ues cannot
Coupled[4] Fourth component to be combined None None
ReuseRLGC
None no
re-cal cul ated.
ReuseRLGC=no
ReuseRLGC=yes
di rectory.
Symbol
Parameters
Notes/Equations
Coupled[4] Fourth component to be combined None None
Coupled[5] Fifth component to be combined None None
ReuseRLGC
None no
re-cal cul ated.
ReuseRLGC=no
ReuseRLGC=yes
di rectory.
3-10 ML1CTL_C to ML8CTL_C, ML16CTL_C (Coupled Lines, Constant Width and Spacing)
ML1CTL_C to ML8CTL_C, ML16CTL_C (Coupled Lines, Constant Width
and Spacing)
Symbol
Parameters
Subst Substrate name None Subst1
Length Line length mil 100.0
W Width of conductors mil 10.0
Layer Layer number of all conductors Integer 1
ReuseRLGC
None no
ML1CTL_C to ML8CTL_C, ML16CTL_C (Coupled Lines, Constant Width and Spacing) 3-11
Range of Usage
W > 0
S > 0
Notes/Equations
1. Di spersi on due to ski n effect and di el ectri c l oss i s cal cul ated. Di spersi on due to
i nhomogeneous di el ectri cs i s not consi dered.
2. These model s are i mpl emented as the numeri cal sol uti on of Maxwel l s
Equati ons for the two-di mensi onal cross-secti on geometry that i s defi ned by the
model parameters. Because a new numeri cal cal cul ati on i s performed for each
uni que set of geometri c or materi al parameters, the eval uati on of these model s
may take a few seconds on some pl atforms. One effect of thi s i mpl ementati on i s
that opti mi zati on of any set of the geometri c or materi al parameters for these
model s may resul t i n a ti me-consumi ng anal ysi s. Onl y one numeri cal
cal cul ati on i s requi red for an anal ysi s that i s onl y swept wi th respect to
frequency. The eval uati on ti me for thi s model i s si gni fi cantl y reduced for
conductors of 0 thi ckness.
3. Conductor l oss (and i ts contri buti on to noi se) i s not consi dered i f conducti vi ty i s
i nfi ni te or conductor thi ckness i s 0.
4. A substrate must be named as the Subst parameter and a mul ti l ayer
i nterconnect substrate defi ni ti on that corresponds to thi s name must appear on
the schemati c.
re-cal cul ated.
ReuseRLGC=no
3-12 ML1CTL_C to ML8CTL_C, ML16CTL_C (Coupled Lines, Constant Width and Spacing)
ReuseRLGC=yes
di rectory.
6. Al l n conductors of the MLnCTL_C model l ay on the same l ayer. I f the n
conductors of the coupl ed l i nes are assi gned to di fferent l ayers, use the more
general MLnCTL_V model .
ML2CTL_V to ML10CTL_V (Coupled Lines, Variable Width and Spacing) 3-13
ML2CTL_V to ML10CTL_V (Coupled Lines, Variable Width and Spacing)
Symbol
Parameters
Range of Usage
Length > 0
W > 0
Notes/Equations
Length Line length mil 100.0
W[n] Width of conductors mil 10.0
S Spacing mil 5.0
Layer[n] Layer number of all conductors Integer 1
ReuseRLGC
None no
3-14 ML2CTL_V to ML10CTL_V (Coupled Lines, Variable Width and Spacing)
4. A substrate must be named i n the Subst fi el d and a mul ti l ayer i nterconnect
substrate defi ni ti on that corresponds to thi s name must be pl aced i n the
schemati c.
5. Spaci ng (S[i ] i s measured from the ri ght edge of the i th conductor to the l eft
edge of (i t1)th conductor. I f (i t1)th conductor overl ays wi th i th conductor, S[i ]
wi l l be negati ve, as i l l ustrated.
re-cal cul ated.
W[1] W[2]
S[2]
S[1]
ML2CTL_V to ML10CTL_V (Coupled Lines, Variable Width and Spacing) 3-15
ReuseRLGC=no
ReuseRLGC=yes
di rectory.
3-16 MLACRNR1 (190-degree Corner, Changing Width)
MLACRNR1 (190-degree Corner, Changing Width)
Symbol
Parameters
Range of Usage
W1 > 0
W2 > 0
Notes/Equations
substrate defi ni ti on that corresponds to thi s name must appear on the ci rcui t
page.
2. Thi s component represents a di sconti nui ty model that i s very basi c and
provi des l i mi ted accuracy. For greater accuracy, use the coupl ed transmi ssi on
l i ne model s.
W1 Width on one side mil 10.0
W2 Width on the other side mil 10.0
Layer Layer number of conductor Integer 1
MLACRNR2 to MLACRNR8, MLACRNR16 (Coupled 90-deg Corners, Changing Pitch) 3-17
MLACRNR2 to MLACRNR8, MLACRNR16 (Coupled 90-deg Corners,
Changing Pitch)
Symbol
Parameters
Range of Usage
W1 > 0
W2 > 0
Notes/Equations
1. Coupl ed l i ne corners are model ed as staggered coupl ed l i nes. The di sconti nui ty
effect of corners i s not model ed.
W1 Conductor width on one side mil 10.0
S1 Conductor spacing on one side mil 5.0
W2 Conductor width on the other side mil 10.0
S2 Conductor spacing on the other side mil 15.0
3-18 MLACRNR2 to MLACRNR8, MLACRNR16 (Coupled 90-deg Corners, Changing Pitch)
page.
MLCLE (Via Clearance) 3-19
MLCLE (Via Clearance)
Symbol
Parameters
Range of Usage
Di amCl ear > 0
Di amPad > 0
Di amCl ear > Di amPad
Notes/Equations
1. Thi s component i s model ed as a capaci tor to ground.
2. A substrate must be named i n the Subst fi el d and a mul ti l ayer substrate
defi ni ti on that corresponds to thi s name must appear on the ci rcui t page.
3. A vi a cl earance must be l ocated on a ground l ayer or a power l ayer. The pi ns of
MLCLE must be connected to the pi ns of MLVI AHOLE. MLCLE model s the
parasi ti c capaci tance between the vi a hol e and the power/ground pl ane on
whi ch MLCLE i s l ocated.
4. When MLCLE components are used wi th MLVI AHOLE components, the i nner
di ameter of the cl earance hol e (MLCLE parameter Di amPad) must be set equal
to the vi a di ameter (MI VI AHOLE parameter Di amVi a).
DiamClear Clearance diameter mil 15.0
DiamPad Pad diameter mil 5.0
Layer Layer number of the clearance Integer 2
3-20 MLCLE (Via Clearance)
5. A ci rcui t usi ng vi a components to create a path to mul ti pl e board l ayers i s
i l l ustrated.
MLCLE (Via Clearance) 3-21
3-22 MLCRNR1 to MLCRNR8, MLCRNR16 (Coupled Angled Corners, Constant Pitch)
MLCRNR1 to MLCRNR8, MLCRNR16 (Coupled Angled Corners, Constant
Pitch)
Symbol
Parameters
Range of Usage
W > 0
S > 0
0 Angl e 90
Notes/Equations
1. Coupl ed l i ne corners are model ed as staggered coupl ed l i nes. The di sconti nui ty
effect of corners i s not model ed.
S Spacing between conductors mil 5.0
MLCRNR1 to MLCRNR8, MLCRNR16 (Coupled Angled Corners, Constant Pitch) 3-23
page.
3-24 MLCROSSOVER1 to MLCROSSOVER8 (1 to 8 Crossovers)
MLCROSSOVER1 to MLCROSSOVER8 (1 to 8 Crossovers)
Symbol
Parameters
Range of Usage
W_Top > 0
W_Bottom > 0
S_Top > 0
S_Bottom > 0
W_Top Width of top conductors mil 10.0
W_Bottom Width of bottom conductors mil 10.0
S_Top Spacing between top conductors mil 10.0
S_Bottom Spacing between bottom conductors mil 10.0
LayerTop Top layer number Integer 1
LayerBottom Bottom layer number Integer 2
MLCROSSOVER1 to MLCROSSOVER8 (1 to 8 Crossovers) 3-25
Notes/Equations
1. An i mportant di sconti nui ty i n hi gh-speed di gi tal desi gn i s the crossover
between two adjacent si gnal l ayers. The crossover causes parasi ti c capaci tance,
resul ti ng i n hi gh-frequency crosstal k. These crossover model s are model ed as
coupl ed l i nes cascaded wi th juncti on coupl i ng capaci tors. The model s are
quasi -stati c.
page.
3. Port reference pl anes are l ocated at the edge of each crossover regi on, as shown
i n Fi gure 3-1. The capaci tor i s at the juncti on where a hori zontal and verti cal
l i ne cross.
Fi gure 3-1. Crossover regi on wi th port reference pl anes
l i ne model s.
Subst=fourlayer
W1=10 mil
S1=2 mil
LayerTop=1
W2=10 mil
S2=2 mil
LayerBottom=2
3-26 MLJCROSS (Cross Junction)
MLJCROSS (Cross Junction)
Symbol
Parameters
Range of Usage
W1 > 0
W2 > 0
W3 > 0
W4 > 0
Notes/Equations
1. The cross juncti on i s treated as an i deal connecti on between pi ns 1, 2, 3, and 4,
and i s provi ded to faci l i tate i nterconnecti ons between l i nes i n l ayout.
page.
l i ne model s.
Layer Layer number Integer 1
MLJGAP (Open Gap) 3-27
MLJGAP (Open Gap)
Symbol
Parameters
Range of Usage
G > 0
W > 0
Notes/Equations
1. The gap i s treated as an i deal open ci rcui t between pi ns 1 and 2, and i s provi ded
to faci l i tate l ayout.
page.
l i ne model s.
G Width of gap mil 10.0
W Width of conductor mil 10.0
3-28 MLJTEE (Tee Junction)
MLJTEE (Tee Junction)
Symbol
Illustration
Parameters
Range of Usage
W[n] > 0
Notes/Equations
1. The tee juncti on i s treated as an i deal connecti on between pi ns 1, 2, and 3, and
i s provi ded to faci l i tate i nterconnecti ons between l i nes ori ented at di fferent
angl es i n l ayout.
page.
MLJTEE (Tee Junction) 3-29
l i ne model s.
3-30 MLOPENSTUB (Open Stub)
MLOPENSTUB (Open Stub)
Symbol
Parameters
Range of Usage
W > 0
L > 0
Notes/Equations
1. I f the l ength of the stub i s zero, thi s component si mul ates an open-end effect. I f
the l ength i s greater than zero, thi s component si mul ates a l ength of l i ne and
an open-end effect.
page.
l i ne model s.
Length Length of conductor mil 10.0
W Width of conductor mil 10.0
MLRADIAL1 to MLRADIAL5 (Radial Line, Coupled Radial Lines) 3-31
MLRADIAL1 to MLRADIAL5 (Radial Line, Coupled Radial Lines)
Symbol
Parameters
Range of Usage
X_Offset > 0
Y_Offset > 0
W_Left > 0
W_Ri ght > 0
S_Left > 0
S_Ri ght > 0
X_Offset Horizontal offset mil 100.0
Y_Offset Vertical offset mil 0.0
W_Left Width of conductor on left side mil 20.0
W_Right Width of conductor on right side mil 10.0
S_Left Spacing between conductors on left side mil 5.0
S_Right Spacing between conductors on right side mil 10.0
3-32 MLRADIAL1 to MLRADIAL5 (Radial Line, Coupled Radial Lines)
Notes/Equations
1. Radi al l i nes are model ed as a cascade of uni form coupl ed l i ne segments. Each
segment i s i mpl emented as the numeri cal sol uti on of Maxwel l s Equati ons for
the two-di mensi onal cross-secti on geometr y. For opti mi zati on or tuni ng,
zero-thi ckness conductor i s suggested to speed up the run ti me.
page.
l i ne model s.
MLSLANTED1 to MLSLANTED8, MLSLANTED16 (Slanted Line, Slanted Coupled Lines) 3-33
MLSLANTED1 to MLSLANTED8, MLSLANTED16
(Slanted Line, Slanted Coupled Lines)
Symbol
Parameters
X_Offset Horizontal offset mil 100.0
Y_Offset Vertical offset mil 100.0
S Spacing between conductors mil 2.0
Layer Layer number of conductors Integer 1
3-34 MLSLANTED1 to MLSLANTED8, MLSLANTED16 (Slanted Line, Slanted Coupled Lines)
Range of Usage
X_Offset > 0
Y_Offset > 0
W > 0
S > 0
Notes/Equations
page.
l i ne model s.
MLSUBSTRATE2 to MLSUBSTRATE10, MLSUBSTRATE12, MLSUBSTRATE14, MLSUBSTRATE16,
MLSUBSTRATE32, MLSUBSTRATE40 (Dielectric Constant for N Layers) 3-35
MLSUBSTRATE2 to MLSUBSTRATE10, MLSUBSTRATE12,
MLSUBSTRATE14, MLSUBSTRATE16, MLSUBSTRATE32,
MLSUBSTRATE40 (Dielectric Constant for N Layers)
Symbol
Illustration
Parameters
Er[n] Relative dielectric constant for the substrate None 4.5
H[n] Height of substrate mil 10
TanD[n] Dielectric loss tangent None 0
T[n] Metal thickness mil 0

Default depends on layer.
3-36 MLSUBSTRATE2 to MLSUBSTRATE10, MLSUBSTRATE12, MLSUBSTRATE14,
MLSUBSTRATE16, MLSUBSTRATE32, MLSUBSTRATE40 (Dielectric Constant for N Layers)
Recommended Range of Usage
Er[n] > 0
H[n] > 0
TanD[n] > 0
Cond[n] > 0
Netlist Format
external fi l e.
model substratename Substrate N=layers [parm=value]*
substratename that wi l l be used by mul ti l ayer components to refer to the model . The
thi rd parameter i ndi cates the type of model ; for thi s model i t i s Substrate. The fourth
parameter i s the number of l ayers for thi s substrate. The number of l ayers may be
any val ue between 2 and 40. The rest of the model contai ns pai rs of substrate model
parameters and val ues, separated by an equal si gn. The name of the model
parameter must appear exactl y as shown i n the parameters tabl e-these names are
case sensi ti ve. Model parameters may appear i n any order i n the model statement.
For more i nformati on about the ADS ci rcui t si mul ator netl i st format, i ncl udi ng scal e
factors, subci rcui ts, vari abl es and equati ons, refer to ADS Si mul ator I nput Syntax
i n the Circuit Simulation manual .
Exampl e:
model Subst1 Substrate N=2 Er=4.5 H=10 mil TanD=0 \
T[1]=0 mi l Cond[1]=1.0E+50 LayerType[1]="si gnal " \
T[2]=0 mi l Cond[2]=1.0E+50 LayerType[2]="ground"
Cond[n] Conductivity None 1.0e+50
LayerType[n] Type of the metal layer: blank, signal, ground, power None
LayerName[n] Layer name (for layout use): select from list None
LayerViaName[n] Layer name of the via (for layout use): select from list None

Default depends on layer.
MLSUBSTRATE2 to MLSUBSTRATE10, MLSUBSTRATE12, MLSUBSTRATE14, MLSUBSTRATE16,
MLSUBSTRATE32, MLSUBSTRATE40 (Dielectric Constant for N Layers) 3-37
Notes/Equations
1. N-1 defi nes the number of di el ectri c l ayers bei ng used as a mul ti l ayer substrate.
The number of di el ectri c l ayers supported are N=2, 3, 4, 5, 6, 7, 8, 10, 12, 14, 16,
32 and 40.
2. At l east one substrate component must be i nserted as part of any mul ti l ayer
ci rcui t desi gn. The name of the substrate must be i nserted i n the Subst fi el d of
every mul ti l ayer i nterconnect component di spl ayi ng the fi el d i n the ci rcui t.
Substrate names can be up to 10 characters l ong; they must begi n wi th a l etter,
not a number or a symbol .
3. I f the conductor thi ckness T[n] i s set to <=0.1 um or i f the conducti vi ty Cond[n]
i s set to i nfi ni ty, the conductor i s assumed to have zero l oss. T[n] can be used to
speci fy the posi ti on of the trace on a substrate. I f T[n] i s posi ti ve, the trace
grows up i nto the di el ectri c materi al ; i f T[n] i s negati ve, the trace grows down
i nto the materi al . For ground and power suppl y l ayers, assi gni ng T[n] as
posi ti ve or negati ve has no effect, as i l l ustrated here.
4. The substrate schemati c symbol appears as a cross-secti on of a substrate. Each
l ayer i s l abel ed, and you can easi l y set the parameters for each l ayer.
A si gnal l ayer has components on i t.
A power or ground l ayer i s a sol i d sheet of metal . No components are on thi s
l ayer other than cl earance hol es.
A bl ank l ayer i s an i nterface between two di el ectri c materi al s. The onl y
di fference between bl ank l ayers and Si gnal l ayers i s, that on a Si gnal l ayer
you can defi ne components, and on a bl ank l ayer you cant. When the user
does not i ntend to pl ace components on a certai n di el ectri c i nterface, i t i s best
T = 1 mil
T = -1 mil
Ground Plane
Dielectric
Material
3-38 MLSUBSTRATE2 to MLSUBSTRATE10, MLSUBSTRATE12, MLSUBSTRATE14,
MLSUBSTRATE16, MLSUBSTRATE32, MLSUBSTRATE40 (Dielectric Constant for N Layers)
to defi ne i t as a bl ank l ayer. The computati onal advantage for the user i s,
that no coupl i ng functi ons have to be cal cul ated for the bl ank l ayer. Thi s wi l l
speed up si mul ati on.
MLVIAHOLE (Via Hole) 3-39
MLVIAHOLE (Via Hole)
Symbol
Parameters
Range of Usage
Di amVi a > 0
T > 0
Cond > 0
Notes/Equations
1. Thi s component i s model ed as an i nductor.
defi ni ti on that corresponds to thi s name must be pl aced i n the schemati c.
shown next.
DiamVia Via diameter mil 5.0
T Via thickness mil 0.0
Cond Conductivity None 1.0e+50
Layer[1] Starting layer number Integer 1
Layer[2] Ending layer number Integer 2
Layer Via (for Layout option) Via layer None 1
3-40 MLVIAHOLE (Via Hole)
MLVIAHOLE (Via Hole) 3-41
l i ne model s.
3-42 MLVIAPAD (Via Pad)
MLVIAPAD (Via Pad)
Symbol
Parameters
Range of Usage
Di amVi a > 0
Di amPad > 0
180 Angl e +180
Notes/Equations
1. Thi s component i s model ed as a capaci tor to ground.
defi ni ti on that corresponds to thi s name must appear on the ci rcui t page.
3. A vi a pad connects si gnal trace to a vi a hol e. Pi n 1 of MLVI APAD shoul d be
connected to a si gnal trace. Pi n 2 shoul d be connected to a MLVI AHOLE.
4. Angl e refers to the angl e between two connecti ng l i nes and i s necessary for
performi ng l ayout. I n Fi gure 3-2 the angl e between the two traces i s 90. The
angl e parameters of the two pads used i n connecti ng these traces must be
speci fi ed so that the di fference between them i s 90. Therefore, the angl e of the
fi rst pad may be 45 and the second 45, or 0 and 90, respecti vel y.
DiamVia Via diameter mil 5.0
DiamPad Pad diameter mil 15.0
Angle (for Layout option) Input pin to output pin angle deg 180
MLVIAPAD (Via Pad) 3-43
Fi gure 3-2. 90 angl es of connecti ng l i nes
shown.
3-44 MLVIAPAD (Via Pad)
l i ne model s.
4-1
Chapter 4: Passive RF Circuit Components
4-2 AIRIND1 (Aircore Inductor (Wire Diameter))
Passive RF Circuit Components
AIRIND1 (Aircore Inductor (Wire Diameter))
Symbol
Parameters
Range of Usage
N 1
WD > 0
L N WD
D > 0
Notes/Equations
1. Thi s component i s envi si oned as a si ngl e-l ayer coi l . Loss i s i ncl uded by
cal cul ati ng total resi stance, i ncl udi ng ski n effect, from the physi cal di mensi ons
and the resi sti vi ty. The resonant frequency i s esti mated from the physi cal
di mensi ons.
thermal noi se).
D Diameter of form mil 210.0
L Length of form mil 400.0
WD Wire diameter mil 32.0
Rho Metal resistivity (relative to copper) None 1.0
Temp Physical temperature C None
AIRIND1 (Aircore Inductor (Wire Diameter)) 4-3
References
[1] Frederi ck W. Grover, I nductance Calculations: Working Formulas and Tables,
Dover Publ i cati ons, I nc., 1962, Chapter 16, pp. 142-162.
[2] R. G. Medhurst, H.F. Resi stance and Sel f-Capaci tance of Si ngl e-Layer
Sol enoi ds, Wireless Engineer, February 1947, pp. 35-43.
Sol enoi ds, Wireless Engineer, March 1947, pp. 80-92.
Equivalent Circuit
4-4 AIRIND2 (Aircore Inductor (Wire Gauge))
AIRIND2 (Aircore Inductor (Wire Gauge))
Symbol
Parameters
Range of Usage
N 1
9 AWG 46
L N WD, where WD i s the wi re-di ameter
D > 0
Notes/Equations
1. Thi s component i s envi si oned as a si ngl e-l ayer coi l . Loss i s i ncl uded by
cal cul ati ng total resi stance, i ncl udi ng ski n effect, from the physi cal di mensi ons
and the resi sti vi ty. The resonant frequency i s esti mated from the physi cal
di mensi ons.
thermal noi se).
D Diameter of form mil 210.0
L Length of form mil 400.0
AWG Wire gauge (any value in AWG table) None 20
Rho Conductor resistivity (relative to copper) None 1.0
AIRIND2 (Aircore Inductor (Wire Gauge)) 4-5
References
[1] Frederi ck W. Grover, I nductance Calculations: Working Formulas and Tables,
Dover Publ i cati ons, I nc., 1962, Chapter 16, pp. 142-162.
Sol enoi ds, Wireless Engineer, February 1947, pp. 35-43.
Sol enoi ds, Wireless Engineer, March 1947, pp. 80-92.
Equivalent Circuit
4-6 BALUN1 (Balanced-to-Unbalanced Transformer (Ferrite Core))
BALUN1 (Balanced-to-Unbalanced Transformer (Ferrite Core))
Symbol
Parameters
Range of Usage
Z > 0, Len > 0, AL > 0
K 1
A 0
F 0
N 1
Notes/Equations
1. Thi s component i s a l ength of transmi ssi on l i ne (speci fi ed by Z, Len, K, A and F)
coi l ed around a ferri te core.
2. Choki ng i nductance L
c
accounts for l ow-frequency rol l -off and i s gi ven by
L
c
= N
2
AL
Z Characteristic impedance of transmission line Ohm 50.0
Len Physical length of transmission line mil 12.0
K Effective dielectric constant None 2.0
A Attenuation of transmission line dB/unit length 0.0
F Frequency for scaling attenuation GHz 1.0
AL Inductance index nH 960.0
TanM Magnetic loss tangent None 0
Sigma Dielectric conductivity None 0
BALUN1 (Balanced-to-Unbalanced Transformer (Ferrite Core)) 4-7
A(f) = A (for F = 0)
A(f) = A(F) (for F 0)
where
f = si mul ati on frequency
F = reference frequency for attenuati on
thermal noi se).
References
[1] J. Sevi ck, Transmission Line Transformers, 2nd Ed., Ameri can Radi o Rel ay
League, Newi ngton, CT, 1990.
Equivalent Circuit
f
F
--- -
\ .
| |
4-8 BALUN2 (Balanced-to-Unbalanced Transformer (Ferrite Sleeve))
BALUN2 (Balanced-to-Unbalanced Transformer (Ferrite Sleeve))
Symbol
Parameters
Range of Usage
Z > 0, Len > 0, Mu > 0, L > 0
K 1
A 0
F 0
Notes/Equations
1. Thi s component i s a strai ght l ength of transmi ssi on l i ne (speci fi ed by Z, Len, K,
A and F) surrounded by a ferri te sl eeve.
2. Choki ng i nductance L
c
accounts for l ow-frequency rol l -off and i s gi ven by
L
c
= Mu L Len
A(f) = A (for F = 0)
Mu Relative permeability of surrounding sleeve None 10.0
L Inductance (per unit length) of the line without the sleeve nH 20.0
BALUN2 (Balanced-to-Unbalanced Transformer (Ferrite Sleeve)) 4-9
A(f) = A(F) (for F 0)
where
F = reference frequency for attenuati on
thermal noi se).
References
[1] Sevi ck, Jerry. Transmission Line Transformers, 2nd Ed., Ameri can Radi o Rel ay
Equivalent Circuit
f
F
----
\ .
| |
410 _ (/ )

BONDW_Shape (Philips/TU Delft Bondwire Parameterized Shape)
Symbol
Parameters
Rw Radius of the bondwire um 12.5
Gap Total distance the wire expands um 500
StartH Start height of the bondwire above the ground plane
Flip=1 start height above odd-numbered pins
Flip=0 start height above even-numbered pins
um 0
MaxH Maximum height of the bondwire above the ground plane um 100
Tilt Tilt (negative value: make an additional reverse loop)
for >0: wire tilts to the right;
for =0: wire tilts slightly to the right;
for <0: wire makes an additional loop to the left
um 0
Stretch Length of the top segment um 0
StopH Stop height of the bondwire above the ground plane
Flip=1 stop height above odd-numbered pins
Flip=0 stop height above even-numbered pins
um 0
FlipX 0=flip geometry in x direction
1=geometry unaltered
(The pin coordinates remain unchanged.)
None 1
BONDW_Shape (Philips/TU Delft Bondwire Parameterized Shape) 4-11
Notes
1. The Gap parameter does not al l ow for wi res that are perpendi cul ar to the
ground pl ane.
2. For more detai l s on the use of bondwi re components, refer to BONDW1 to
BONDW50 (Phi l i ps/TU Del ft Bondwi res Model ) on page 4-15.
3. Thi s bondwi re shape i s defi ned i n the XZ pl ane wi th the reference poi nt defi ned
as (0,0,Rw+StartH) or (0,0,Rw+StopH) dependi ng on Fl i p = 0 or Fl i p = 1
respecti vel y. Non-pl anar structures are possi bl e wi th the BONDW_Usershape
Equations
MaxH
Stretch
FlipX=1
Ground plane
StartH StopH
Tilt
MaxH
Stretch
FlipX=1
Ground plane
StartH StopH
Tilt
Tilt>0
Tilt<0
X
Z
Gap
Gap
WX1 0 =
WX2 mi n Ti l t Rw 3 Rw , ( ) ramp Ti l t ( ) ( ) sgn 1 3 ramp max Ti l t 3 Rw , ( ) ( ) + =
WX3 mi n Ti l t Rw 3 Rw , ( ) ramp Ti l t ( ) ( ) sgn 2 3 ramp max Ti l t 3 Rw , ( ) ( ) + =
WX4 ramp max Ti l t 3 Rw , ( ) ( ) ramp Ti l t ( ) ( ) 3 Rw sgn =
WX5 max 4 Rw abs Stretch ( ) , ( ) ramp max Ti l t 3 Rw , ( ) ( ) ramp Ti l t ( ) ( ) 3 Rw sgn + =
WX6 Gap =
4-12 BONDW_Shape (Philips/TU Delft Bondwire Parameterized Shape)
WZ1 Rw StartH + =
WZ2 1 3 MaxH 2 3 StartH Rw + ( ) + =
WZ3 2 3 MaxH 1 3 + StartH Rw + ( ) =
WZ4 MaxH =
WZ5 MaxH =
WZ6 Rw StopH + =
X1 0 =
X2 Fl i p 1 = ( )
Gap WX5
WX2
=
X3 Fl i p 1 = ( )
Gap WX4
WX3
=
X4 Fl i p 1 = ( )
Gap WX3
WX4
=
X5 Fl i p 1 = ( )
Gap WX2
WX5
=
X6 Fl i p 1 = ( )
Gap WX1
WX6
=
Y1 0 =
Y2 0 =
Y3 0 =
Y4 0 =
Y5 0 =
Y6 0 =
Z1 Fl i p 1 = ( )
WZ6
WZ1
=
Z2 Fl i p 1 = ( )
WZ5
WZ2
=
Z3 Fl i p 1 = ( )
WZ4
WZ3
=
Z4 Fl i p 1 = ( )
WZ3
WZ4
=
BONDW_Shape (Philips/TU Delft Bondwire Parameterized Shape) 4-13
Z5 Fl i p 1 = ( )
WZ2
WZ5
=
Z6 Fl i p 1 = ( )
WZ1
WZ6
=
4-14 BONDW_Usershape (Philips/TU Delft Bondwire Model with User-Defined Shape)
BONDW_Usershape (Philips/TU Delft Bondwire Model with User-Defined
Shape)
Symbol
Parameters
Notes
1. Thi s model generates a bondwi re accordi ng to user i nput; vi rtual l y any shape i s
possi bl e.
2. For more detai l s on the use of bondwi re components, refer to BONDW1 to
BONDW50 (Phi l i ps/TU Del ft Bondwi res Model ) on page 4-15.
3. (X1, Y1, Z1) i s the reference poi nt of thi s wi re.
X_1 ... X_6 Required segment coordinates um 0
Y_1 ... Y_6 Required segment coordinates um 0
Z_1 ... Z_6 Required segment coordinates um 0
X1,Y1,Z1
X2,Y2,Z2
X3,Y3,Z3
X4,Y4,Z4
X5,Y5,Z5
X6,Y6,Z6
X
Z
Y
BONDW1 to BONDW50 (Philips/TU Delft Bondwires Model) 4-15
BONDW1 to BONDW50 (Philips/TU Delft Bondwires Model)
Symbol
Parameters
4-16 BONDW1 to BONDW50 (Philips/TU Delft Bondwires Model)
Notes
1. The model i s based on Koen Mouthaans model WI RECURVEDARRAY, whi ch
i ncl udes ski n effects as wel l . The model cal cul ates the effecti ve i nductance
matri x of a set of mutual l y coupl ed bondwi res as a functi on of the geometri cal
shape i n space of the wi res. The wi re shapes must be l i neari zed i nto 5 segments.
To defi ne the shape you shoul d refer to a shape wi re (l i ke a BONDW_Shape or a
BONDW_Usershape i nstance).
2. Important: Some exampl es of symbol s are provi ded i n ADS i n the Passi ve-RF
Ci rcui t component l i brary pal ette (N=1,2,3,4,5,6,7,8,9,10, 20). Other BONDWxx
components up to N=50 are al so avai l abl e i n thi s ADS l i brary but BONDW11
through BONDW19 and BONDW21 through BONDW50 are not presented i n
the component pal ette or l i brary browser. These components can be accessed by
typi ng thei r name i n the component hi story fi el d.
To use these components i n a Schemati c wi ndow, type the exact name (such as
BONDW12) i n the Component Hi story fi el d above the desi gn area; press Enter;
move the cursor to the desi gn area and pl ace the component.
Si nce the model i nsi de the si mul ator works wi th any number of bondwi res, ADS
al so gi ves users the capabi l i ty to create l arger bondwi re components wi th thei r
symbol s. The component defi ni ti ons and symbol s from 1 to any N can be
Radw Radius of the bondwires um 12.5
Cond Conductivity of the bondwires S 1.3e7
View (ADS Layout option) Determines top or side view, with the option to make
segments visible or not
None side
Layer (for Layout option) Layer to which the bondwire is drawn None cond
SepX Separation, incrementally added to each X offset um 0
SepY Separation, incrementally added to each Y offset um 0
Zoffset Base offset to add to all Z offsets um 0
W#_Shape Shape reference (quoted string) for wire 1 um Shape1
W#_Xoffset X offset for wire 1 um 0
W#_Yoffset Y offset for wire 1 um 0
W#_Zoffset Z offset for wire 1 um 0
W#_Angle Rotation angle of wire 1 with respect to odd-numbered connections deg 0
Note: The block W#_Shape...W#_Angle is repeated for each individual wire.
generated usi ng the ADS Command Li ne by choosi ng Tool s > Command Li ne
from the ADS Mai n wi ndow. Type create_bondwi res_symbol (N) where N i s the
maxi mum number of bondwi res you need. A fi l e cal l ed bondwi res.ael wi th the
component defi ni ti ons and al l the requi red symbol fi l es wi l l be created i n the
networks di rectory of your current project. Reopeni ng the project wi l l
automati cal l y l oad the bondwi res.ael fi l e, and the l i brary
nmgl i b_bondwi res_new wi l l be avai l abl e i n your l i brary browser.
3. Introduction to Bondwire Components
The bondwi re model i s a physi cs-based model , cal cul ati ng the sel f i nductances
and mutual i nductances (the i nductance matri x) of coupl ed bondwi res. For the
cal cul ati on of these i nductances, Neumanns i nductance equati on i s used i n
combi nati on wi th the concept of parti al i nductances [1], [2]. The method of
i mages i s used to account for a perfectl y conducti ng groundpl ane [6]. The DC-
and AC-resi stance of each wi re are i ncl uded i n the model usi ng a zero order
approxi mati on.
4. Bondwire Features and Restrictions
Cal cul ati on of the sel f- and mutual i nductance of coupl ed bondwi res usi ng
Neumanns i nductance equati on.
Each bondwi re i s represented by fi ve strai ght segments.
Cartesi an (x,y,z) coordi nates for begi n- and end-poi nts of the segments are
entered.
Wi res may not touch or i ntersect.
A perfectl y conducti ng groundpl ane i s assumed at z=0.
Capaci ti ve coupl i ng between bondwi res i s not accounted for.
Capaci ti ve coupl i ng to ground i s not accounted for.
Loss, due to radi ati on i s not consi dered.
A change i n the current di stri buti on due to the proxi mi ty of other wi res
(proximity effect) i s not i ncl uded.
DC l osses, due to the fi ni te conducti vi ty of the wi res i s i ncl uded.
AC l osses, due to the ski n effect, are accounted for i n a zero-th order
approxi mati on.
5. Input Parameters of the Model
I n model l i ng the bondwi res, each bondwi re i s represented by fi ve strai ght
segments. Thi s i s i l l ustrated i n Fi gure 4-1, where the SEM photo of a bondwi re
i s shown: on the l eft two coupl ed bondwi res are shown; on the ri ght, fi ve
segments representi ng the bondwi re are shown.
The bondwi re model requi res the fol l owi ng i nput parameters:
radi us of the wi res (meters)
conducti vi ty of the wi res (Si emens/meter)
vi ew top, si de, top (ful l ), si de (ful l )
l ayer (cond, cond2, resi , di el , di el 2. bond, symbol , text, l eads, packages)
begi n poi nt, i ntermedi ate poi nts and endpoi nt of the segments i n Cartesi an
coordi nates (meters).
A perfectl y conducti ng groundpl ane at z=0 i s assumed. The presence of thi s
groundpl ane normal l y reduces the i nductance compared to the case of wi res
wi thout such a groundpl ane.
Fi gure 4-1. Pi ecewi se Approxi mati on of Bondwi res
on the ri ght, wi re i s approxi mated by strai ght segments
6. Example Instance
The i nstance for three wi res i s shown i n Fi gure 4-2. The symbol BONDW3
defi nes the number of bondwi res and thei r rel ati ve posi ti ons.
Fi gure 4-2. I nstance of Bondwi re Model for 3 Wi res (BONDW3)
I n thi s exampl e, the i nput parameters are as fol l ows.
RW, radi us of the wi res (meters). I f the di ameter of a wi re i s 25 um, the val ue
of RW shoul d be set to 12.5 um.
COND, conducti vi ty of the wi re (Si emens/meter). I f the wi res have a
conducti vi ty of 1.3 10E+7 S/m the val ue of COND must be set to 1.3E7.
VI EW set to defaul t si de
LAYER set to defaul t cond
SepX = 0 i s a constant separati on i n the x di recti on that i s added
i ncremental l y to each wi re.
SepY = 200 um i s a constant separati on i n the y di recti on, whi ch i s added
i ncremental l y to each wi re. I n the common case of paral l el wi res, thi s i s the
di stance between wi res.
Zoffset = 0 i s an offset added to each bondwi re coordi nates i n the z-di recti on.
Wi _Shape = Shape1 defi nes the shape i nstance. I t can be BONDW_Shape
or BONDW_Usershape (as shown i n Fi gure 4-2).
Wi _Xoffset represents an offset added to each x coordi nate of wi re i (meters).
Wi _Yoffset represents an offset added to each x coordi nate of wi re i (meters).
Wi _Zoffset represents an offset added to each x coordi nate of wi re i (meters).
Wi _Angl e represents the rotati on around a z axi s through the bondwi res i
reference poi nt (x1,y1,z1), away from the x di recti on (degrees).
A perfectl y conducti ng groundpl ane i s assumed at the pl ane z=0.
By choosi ng the BONDW_Usershape (Shape1 symbol ), each wi re i s di vi ded i nto
5 segments and the Cartesi an coordi nates of the begi n and endpoi nts must be
entered.
7. What the Model Calculates
The model cal cul ates the sel f and mutual i nductances of wi res. Capaci ti ve
coupl i ng between wi res or capaci ti ve coupl i ng to ground i s not i ncl uded, nor i s
radi ati on l oss i ncl uded. DC l osses, due to the fi ni te conducti vi ty of the wi res, i s
i ncl uded. AC l osses are i ncl uded usi ng zero-th order approxi mati ons for ski n
effect l osses. The effect of proxi mi ty effects, when wi res are l ocated cl osel y
together, on the i nductance and resi stance i s not i ncl uded i n the model . The
model assumes a perfectl y conducti ng ground pl ane at z=0. The presence of thi s
groundpl ane normal l y reduces the i nductance as compared to the case of wi res
wi thout such a pl ane. Possi bl e el ectromagneti c coupl i ngs between wi res and
other ci rcui t el ements are not accounted for. I n concl usi on, the model cal cul ates
the sel f- and mutual i nductance of wi res. DC l osses are i ncl uded and AC l osses
are approxi matel y i ncorporated.
8. Restrictions on Input
The fol l owi ng i l l ustrati ons demonstrate forbi dden si tuati ons.
Wi re segments must be ful l y l ocated above the groundpl ane at z=0, as
i l l ustrated i n Fi gure 4-3. To guarantee that the wi re i s ful l y l ocated above the
ground pl ane, add the wi re radi us i n the BONDW_Shape component.
Fi gure 4-3. I ncorrect Appl i cati on (on the l eft)
Correct Appl i cati on (on the ri ght)
As shown i n Fi gure 4-4, the angl e between segments al ways must be greater
than 90 degrees.
Fi gure 4-4. 90-degree Angl e Not Suffi ci ent
As shown i n Fi gure 4-5, non-adjacent segments may not touch or i ntersect.
Fi gure 4-5. Non-adjacent Segments Touchi ng
9. Example With a Single Bondwire
Fi gure 4-6. Exampl e of a Bondwi re I nterconnecti ng a Substrate and a MMI C
For conveni ence, a gri d wi th a major gri d spaci ng of 100 um i s al so pl otted.
Usi ng thi s gri d, starti ng poi nt, four i ntermedi ate poi nts and end poi nt are found
as: (400,0,600), (500,0,700), (600,0,730), (800,0,650), (1000,0,420) and
(1100,0,200) respecti vel y (al l i n um). The radi us of the wi re i s 20 um.
The representati on of thi s wi re i n ADS i s shown i n Fi gure 4-7. One wi re i n ADS
uses the poi nts (0,400,600), (0,500,700), (0,600,730), (0,800,650), (0,1000,420)
and (0,1100,200) (i n um) As a resul t of the si mul ati on, the i nductance i s
cal cul ated as 0.730 nH.
Fi gure 4-7. Exampl e of Si ngl e Bondwi re
10. Example With a Double Bondwire
Four bondwi res are pl aced i n paral l el separated by 200 um as shown i n
Fi gure 4-8; each bondwi re has the shape used i n Fi gure 4-7. The i nductance of
the four paral l el wi res i s cal cul ated to be 278 pH. For si mpl i ci ty, the four wi res
i n thi s exampl e are connected i n paral l el ; wi th the model , i t i s easy to cal cul ate
mutual i nductances i n more compl i cated si tuati ons.
Fi gure 4-8. Exampl e of Four Wi res i n ADS
11. Neumanns Inductance Equation
The bondwi re model cal cul ates the i nductance matri x of coupl ed bondwi res
usi ng Neumanns i nductance equati on. The pri nci pl e of thi s equati on for cl osed
l oops i s i l l ustrated i n Fi gure 4-9. The mutual i nductance L
i ,j
between a cl osed
l oop C
i
and a cl osed l oop C
j
i s defi ned as the rati o between the fl ux through C
j
,
due to a current i n C
i
, and the current i n C
i
. The fi gure shows the defi ni ti on of
the mutual i nductance between two current carryi ng l oops as the rati o of the
magneti c fl ux i n contour C
j
and the current i n l oop i .
I n practi ce, however, bondwi res are onl y part of a l oop. To account for thi s effect,
the concept of parti al i nductances i s used [2]. Thi s concept i s i l l ustrated i n
Fi gure 4-9. Thi s fi gure i l l ustrates that the model cal cul ates the parti al
i nductance between the bondwi res, i gnori ng possi bl e coupl i ngs between the
wi res and other ci rcui t el ements.
Fi gure 4-9. Defi ni ti on of Mutual I nductance
Fi gure 4-10 shows Current carryi ng l oops formed wi th network el ements. On
the l eft, cl osed l oops are shown usi ng el ements such as a capaci tor, a resi stor
and a vol tage source. Each l oop al so has a bondwi re. I f onl y the mutual
i nductance between the wi res i s of i nterest, the concept of parti al i nductance i s
used [2] where for reasons of si mpl i ci ty the mutual coupl i ng between the wi res
and the remai ni ng network el ements i s assumed negl i gi bl e. I n thi s case
Neumanns i nductance equati on i s not appl i ed to the cl osed contours, but to the
wi res onl y.
Fi gure 4-10. Loops Formed wi th Network El ements
Fi gure 4-11 shows model l i ng of bondwi res i n ADS. I nducti ve coupl i ng i s
model l ed by the i nductance matri x L and resi sti ve l osses are model l ed by a
resi stance matri x R.
Fi gure 4-11. Model l i ng of Bondwi res i n ADS
12. Specification Coordinate Segments for Bondwire Components
Thi s model cal cul ates the real coordi nate poi nts xj(i ),yj(i ),zj(i ) (j from 1 to 6) for
the fi ve wi re segments of each bondwi re i by usi ng the correspondi ng reference
coordi nates Xj,Yj,Zj of the associ ated bondwi re shape (e. g. the shape
correspondi ng to the W i _Shape parameter of wi re i ) and appl yi ng a rotati on to
i t and two transl ati ons to them.
Fi gure 4-12. An I l l ustrati on of the Process of Rotati on and Transl ati on for the Top
Vi ew of the Wi re Above
The bondwi re i reference shape i s rotated over an angl e of Wi _Angl e degrees
around a z axi s through the reference poi nt X1,Y1,Z1.
The fi rst transl ati on i s over a di stance ( (i -1) SepX, (i -1) SepY, Zoffset)
associ ated wi th the general step for mul ti pl e wi res and general hei ght setti ng
defi ned for the enti re BONDW#component.
The second transl ati on i s an i ndi vi dual perturbati on of the x,y,z posi ti ons of
each wi res wi th respect to the general steppi ng above and i s defi ned by the
i ndi vi dual Wi _Xoffset,Wi _Xoffset,Wi _Zoffset parameters.
Thi s i s expressed by the fol l owi ng equati ons that are val i d for al l BONDWx
components:
xj(i ) = SepX*(i -1) + Wi _Xoffset + X1 + (Xj - X1)*cos(Wi _angl e) -
(Yj-Y1)*si n(Wi _angl e)
yj(i ) = SepY*(i -1) + Wi _Yoffset + Y1 + (Xj - X1)*si n(Wi _angl e) +
(Yj-Y1)*cos(Wi _angl e)
zj(i ) = Zoffset + Wi _Zoffset + Zj
13. Generating Layout
A l ayout representati on can be generated through the ADS Schemati c wi ndow.
After setti ng up wi re shapes and bondwi re components, choose Layout >
Generate/Update Layout to generate a 2D vi sual i zati on of the bondwi res.
You can sel ect a top or si de vi ew of the wi res, wi th or wi thout detai l of the wi re
segments. The defaul t representati on i s a si de vi ew i n si mpl e l i ne art. When
you sel ect the Vi ew opti ons si de(ful l ) or top(ful l ), a representati on showi ng the 5
segments per bondwi re whi ch are used i nsi de the si mul ator i s shown. You can
use these two ful l vi ews i n case of setup probl ems wi th the bondwi re shape
components.
A bondwi re si mul ati on typi cal l y fai l s wi th errors when unexpected forms are
shown, or overl ap occurs, i n these detai l vi ews.
14. Background
The bondwi re model cal cul ates sel f and mutual i nductances of coupl ed
bondwi res and puts the val ues i nto an i nductance matri x L. I n addi ti on the
model cal cul ates the DC and AC resi stances assumi ng uncoupl ed bondwi res.
Changes i n the current di stri buti on wi thi n a wi re due to a nearby l ocated
current carryi ng wi re (proxi mi ty effect) are not accounted for. The DC and AC
resi stances are put i nto a resi stance matri x R. The bondwi re model i s formed by
pl aci ng the i nductance matri x and the resi stance matri x i n seri es (Fi gure 4-11).
15. Further Information
I n the Ph.D. thesi s of K. Mouthaan [5], the model and a compari son of the
model wi th ri gorous si mul ati ons and measurements, are descri bed i n detai l . To
obtai n a copy of the di ssertati on, vi si t the i nternet si te: www.DevilsFoot.com.
References
[1] F. W. Grover, I nductance Calculations Working Formulas and Tables. Dover
Publ i cati ons, I nc., New York, 1946.
[2] A.E. Ruehl i , I nductance cal cul ati ons i n a compl ex i ntegrated ci rcui t
envi ronment, I BM J. Res. Develop, pp. 470-481, September 1972.
[3] K. Mouthaan and R. Ti nti and M. de Kok and H.C. de Graaff and J.L. Tauri tz
and J. Sl otboom, Mi crowave model l i ng and measurement of the sel f- and
mutual i nductance of coupl ed bondwi res, Proceedi ngs of the 1997
Bi pol ar/Bi CMOS Ci rcui ts and Technol ogy Meeti ng, pp.166-169, September
1997.
[4] A.O. Harm and K. Mouthaan and E. Azi z and M. Versl ei jen, Model l i ng and
Si mul ati on of Hybri d RF Ci rcui ts Usi ng a Versati l e Compact Bondwi re Model ,
Proceedi ngs of the European Mi crowave Conference, pp. 529-534, Oct. 1998.
Amsterdam.
[5] K. Mouthaan, Modelling of RF High Power Bipolar Transistors. Ph.D.
di ssertati on, I SBN 90-407-2145-9, Del ft Uni versi ty of Technol ogy, 2001. To
obtai n a copy, vi si t the i nternet si te: http://www.Devi l sFoot.com.
[6] L.V. Bewl y, Two di mensi onal fi el ds i n El ectri cal Engi neeri ng. Dover publ i cati on,
I nc., New York, 1963.
CIND2 (Lossy Toroidal Inductor) 4-29
CIND2 (Lossy Toroidal Inductor)
Symbol
Illustration
Parameters
Range of Usage
N 0
AL > 0
R, Q, F 0
Notes/Equations
1. A val ue of zero for ei ther Q or F i mpl i es that the core i s l ossl ess.
2. The equi val ent ci rcui t component val ues are gi ven by the fol l owi ng equati ons:
AL Inductance index H 0.15
R Total winding resistance Ohm 2.5
Q Core quality factor None 50.0
Freq Frequency at which Q is specified MHz 125.0
L =
N2 AL
C =
1 / [( 2 F)2 L ]
(for F > 0)
= 0 (for F = 0)
4-30 CIND2 (Lossy Toroidal Inductor)
Equivalent Circuit
Rc =
1 / [( 2 F) C Q ]
(for F > 0 and Q > 0)
= 0 (for F = 0, or Q = 0)
HYBCOMB1 (Hybrid Combiner (Ferrite Core)) 4-31
HYBCOMB1 (Hybrid Combiner (Ferrite Core))
Symbol
Parameters
ZB Characteristic impedance of balun line Ohm 50.0
LenB Physical length of balun line mil 12.0
KB Effective dielectric constant of balun line None 2.0
AB Attenuation of balun line dB/meter 0.0
FB Frequency for scaling attenuation of balun line GHz 1.0
NB Number of turns of balun line None 5.0
ALB Inductance index for balun line nH 960.0
ZX Characteristic impedance of transformer line Ohm 50.0
LenX Physical length of transformer line mil 12.0
KX Effective dielectric constant of transformer line None 2.0
AX Attenuation of transformer line dB/unit length 0.0
FX Frequency for scaling attenuation of transformer line GHz 1.0
NX Number of turns of transformer line None 5.0
ALX Inductance index for transformer line nH 960.0
4-32 HYBCOMB1 (Hybrid Combiner (Ferrite Core))
Range of Usage
ZB > 0, LenB > 0, AB 0, ALB > 0, KB, KX 1
ZX > 0, LenX > 0, AX 0, ALX > 0, NB, NX 1
Notes/Equations
1. When used as a combi ner, pi ns 1 and 2 are the i nput pi ns and pi n 3 i s the
output pi n. The termi nati on at pi n 4 i s at the di screti on of the user.
2. Thi s component i s a combi nati on of a bal un and a transformer. Both the bal un
l i ne and the transformer l i ne are coi l ed around ferri te cores.
3. Choki ng i nductances L
cx
and L
cb
account for the l ow-frequency rol l -off and are
gi ven by:
L
cx
= NX
2
ALX
L
cb
= NB
2
ALB
thermal noi se).
References
[1] O. Pi tzal i s Jr. and T. P. M. Couse. Broadband transformer desi gn for RF
transi stor power ampl i fi ers, Proceedings of 1968 Electronic Components
Conference, Washi ngton, D.C., May 1968, pp. 207-216.
HYBCOMB1 (Hybrid Combiner (Ferrite Core)) 4-33
Equivalent Circuit
4-34 HYBCOMB2 (Hybrid Combiner (Ferrite Sleeve))
HYBCOMB2 (Hybrid Combiner (Ferrite Sleeve))
Symbol
Parameters
ZB Characteristic impedance of balun line Ohm 50.0
LenB Physical length of balun line mil 12.0
KB Effective dielectric constant of balun line None 2.0
AB Attenuation of balun line dB/unit length 0.0
FB Frequency for scaling attenuation of balun line GHz 1.0
MUB Relative permeability of ferrite sleeve for balun line None 100.0
LB Inductance (per unit length) of balun line without the sleeve nH 20.0
ZX Characteristic impedance of transformer line Ohm 50.0
LenX Physical length of transformer line mil 12.0
KX Effective dielectric constant of transformer line None 2.0
AX Attenuation of transformer line dB/unit length 0.0
FX Frequency for scaling attenuation of transformer line GHz 1.0
MUX Relative permeability of ferrite sleeve for transformer line None 100.0
LX Inductance (per unit length) of transformer line without the sleeve nH 20.0
HYBCOMB2 (Hybrid Combiner (Ferrite Sleeve)) 4-35
Range of Usage
ZB > 0, LenB > 0, AB 0, MUB > 0, LB > 0 KB, KX 1
ZX > 0, LenX > 0, AX 0, MUX > 0, LX > 0
Notes/Equations
1. When used as a combi ner, pi ns 1 and 2 are the i nput pi ns and pi n 3 i s the
output pi n. The termi nati on at pi n 4 i s at the di screti on of the user.
2. Thi s component i s a combi nati on of a bal un and a transformer. Both the bal un
l i ne and the transformer l i ne are surrounded by ferri te sl eeves.
3. The choki ng i nductances, L
cx
and L
cb
, account for the l ow-frequency rol l -off
and are gi ven by
L
cx
= MUX LX LenX
L
cb
= MUB LB LenB
thermal noi se).
References
[1] O. Pi tzal i s Jr. and T. P. M. Couse. Broadband transformer desi gn for RF
transi stor power ampl i fi ers, Proceedings of 1968 Electronic Components
Conference, Washi ngton, D.C., May 1968, pp. 207-216.
4-36 HYBCOMB2 (Hybrid Combiner (Ferrite Sleeve))
Equivalent Circuit
MUC2 (Two Coupled Resistive Coils) 4-37
MUC2 (Two Coupled Resistive Coils)
Symbol
Parameters
Range of Usage
L
i
> 0, i = 1, 2
R
i
0, i = 1, 2
1 < K12 < 1
Notes/Equations
1. Pi n numbers 1
i
, 2
i
, ... , i correspond to the coupl ed pi ns of coi l 1, coi l 2, ... , coi l i ,
respecti vel y. For exampl e, for MUC2, pi n numbers of coi l 1 are 1 and 3; pi n
numbers of coi l 2 are 2 and 4.
2. The model i s as fol l ows. I f V
ci
denotes vol tage across coi l i, i=1, ... , N then
N
V
ci
= (R
i
+ jL
i
) I
i
+ j M
i j
I
j
j = 1
j i
where
L1 Self-inductance of coil #1 nH 0.5
R1 Resistance of coil #1 Ohm 0.1
K12 Coupling coefficient between coils 1 and 2 None 0.1
M
i j
K
i j
L
i
L
j
=
4-38 MUC2 (Two Coupled Resistive Coils)
MUC3 (Three Coupled Resistive Coils) 4-39
MUC3 (Three Coupled Resistive Coils)
Symbol
Parameters
Range of Usage
L
i
> 0
R
i
0
1 < K
i j
< 1
where
i i , j 3, i j
Notes/Equations
1. Pi n numbers 1, 2, ... , i correspond to the coupl ed pi ns of coi l 1, coi l 2, ... , coi l i ,
numbers of coi l 2 are 2 and 5, and so on.
4-40 MUC3 (Three Coupled Resistive Coils)
ci
N
V
ci
= (R
i
+ jL
i
) I
i
+ j M
i j
I
j
j = 1
j i
where
M
i j
K
i j
L
i
L
j
=
MUC4 (Four Coupled Resistive Coils) 4-41
MUC4 (Four Coupled Resistive Coils)
Symbol
Parameters
Range of Usage
L
i
>
R
i

1 < K
i j
< 1
where
i i , j 4, i j
4-42 MUC4 (Four Coupled Resistive Coils)
Notes/Equations
1. Pi n numbers 1, 2, ... , ni correspond to the coupl ed pi ns of coi l 1, coi l 2, ... , coi l i ,
ci
N
V
ci
= (R
i
+ jL
i
) I
i
+ j M
i j
I
j
j = 1
j i
where
M
i j
K
i j
L
i
L
j
=
MUC5 (Five Coupled Resistive Coils) 4-43
MUC5 (Five Coupled Resistive Coils)
Symbol
Parameters
4-44 MUC5 (Five Coupled Resistive Coils)
Range of Usage
L
i
> 0
R
i
0
1 < K
i j
< 1
where
i i , j 5, i j
Notes/Equations
respecti vel y. For exampl e, for MUC5, pi n numbers of coi l 1 are 1 and 6, pi n
ci
N
V
ci
= (R
i
+ jL
i
) I
i
+ j M
i j
I
j
j = 1
j i
where
M
i j
K
i j
L
i
L
j
=
MUC6 (Six Coupled Resistive Coils) 4-45
MUC6 (Six Coupled Resistive Coils)
Symbol
Parameters
4-46 MUC6 (Six Coupled Resistive Coils)
Range of Usage
L
i
> 0
R
i
0
1 < K
i j
< 1
where
i i , j 6, i j
Notes/Equations
ci
N
V
ci
= (R
i
+ jL
i
) I
i
+ j M
i j
I
j
j = 1
j i
where
M
i j
K
i j
L
i
L
j
=
MUC7 (Seven Coupled Resistive Coils) 4-47
MUC7 (Seven Coupled Resistive Coils)
Symbol
Parameters
4-48 MUC7 (Seven Coupled Resistive Coils)
Range of Usage
L
i
> 0
R
i
0
1 < K
i j
< 1
where
i i , j 7, i j
Notes/Equations
ci
N
V
ci
= (R
i
+ jL
i
) I
i
+ j M
i j
I
j
j = 1
j i
where
MUC7 (Seven Coupled Resistive Coils) 4-49
M
i j
K
i j
L
i
L
j
=
4-50 MUC8 (Eight Coupled Resistive Coils)
MUC8 (Eight Coupled Resistive Coils)
Symbol
Parameters
MUC8 (Eight Coupled Resistive Coils) 4-51
Range of Usage
L
i
> 0
R
i
0
1 < K
i j
< 1
where
i i , j 8, i j
4-52 MUC8 (Eight Coupled Resistive Coils)
Notes/Equations
1. Pi n numbers 1, 2,. ... , ni correspond to the coupl ed pi ns of coi l 1, coi l 2, ... , coi l i ,
ci
N
V
ci
= (R
i
+ jL
i
) I
i
+ j M
i j
I
j
j = 1
j i
where
thermal noi se).
M
i j
K
i j
L
i
L
j
=
MUC9 (Nine Coupled Resistive Coils) 4-53
MUC9 (Nine Coupled Resistive Coils)
Symbol
Parameters
4-54 MUC9 (Nine Coupled Resistive Coils)
K38 Coupling coefficient between coils 3and 8 None 0.91
MUC9 (Nine Coupled Resistive Coils) 4-55
Range of Usage
L
i
> 0
R
i
0
1 < K
i j
< 1
where
i i , j 9, i j
Notes/Equations
ci
N
V
ci
= (R
i
+ jL
i
) I
i
+ j M
i j
I
j
j = 1
j i
where
thermal noi se).
M
i j
K
i j
L
i
L
j
=
4-56 MUC10 (Ten Coupled Resistive Coils)
MUC10 (Ten Coupled Resistive Coils)
Symbol
Parameters
MUC10 (Ten Coupled Resistive Coils) 4-57
4-58 MUC10 (Ten Coupled Resistive Coils)
Range of Usage
L
i
> 0
R
i
0
1 < K
i j
< 1
where
i i , j 10, i j
MUC10 (Ten Coupled Resistive Coils) 4-59
Notes/Equations
ci
N
V
ci
= (R
i
+ jL
i
) I
i
+ j M
i j
I
j
j = 1
j i
where
thermal noi se).
M
i j
K
i j
L
i
L
j
=
4-60 SAGELIN (Sage Laboratories WIRELINE)
SAGELIN (Sage Laboratories WIRELINE)
Symbol
Parameters
Notes/Equations
1. The model i s a standard hybri d coupl er model i n whi ch the even- and odd-mode
effecti ve di el ectri c constants are equal (the medi um i s homogeneous).
2. The quarter-wavel ength frequency i s cal cul ated as:
F (MHz) = 1850 / L (i nches)
3. Pi n desi gnati ons:
1 = i nput
2 = coupl ed
3 = i sol ated
4 = di rect
References
[1] Designers Guide to Wireline & Wirepac, Sage Laboratori es, I nc., 11 Huron
Dri ve, Nati ck, MA 01760-1314.
L Physical length of transmission line mil 18.5
BW_Code Code for bandwidth selection: narrow, octave None narrow
SAGEPAC (Sage Laboratories WIREPAC) 4-61
SAGEPAC (Sage Laboratories WIREPAC)
Symbol
Parameters
Notes/Equations
1. The model i s a standard hybri d coupl er model i n whi ch the even- and odd-mode
effecti ve di el ectri c constants are equal (the medi um i s homogeneous).
2. The quarter-wavel ength frequency i s cal cul ated as:
F (MHz) = 1970/L(i nches)
3. Pi n desi gnati ons:
1= i nput
2 = coupl ed
3 = i sol ated
4 = di rect
References
[1] Designers Guide to Wireline & Wirepac, Sage Laboratori es, I nc., 11 Huron
Dri ve, Nati ck, MA 01760-1314.
L Physical length of transmission line mil 18.5
BW_Code Code for bandwidth selection: narrow, octave None narrow
4-62 TAPIND1 (Tapped Aircore Inductor (Wire Diameter))
TAPIND1 (Tapped Aircore Inductor (Wire Diameter))
Symbol
Parameters
Range of Usage
N1 1
N2 1
D > 0
L (N1 + N2) WD
WD > 0
Notes/Equations
thermal noi se).
N1 Number of turns between pins 1 and 3 None 5.0
D Diameter of coil mil 210.0
L Length of coil mil 400.0
WD Wire diameter None 32
TAPIND1 (Tapped Aircore Inductor (Wire Diameter)) 4-63
References
[1] H. Krauss, C. Bostai n, and F. Raab. Solid State Radio Engineering.
Equivalent Circuit
4-64 TAPIND2 (Tapped Aircore Inductor (Wire Gauge))
TAPIND2 (Tapped Aircore Inductor (Wire Gauge))
Symbol
Parameters
Range of Usage
N1 1
N2 1
D > 0
L (N1 + N2) WD, where WD i s the wi re di ameter
9 AWG 46
Notes/Equations
References
[1] H. Krauss, C. Bostai n, and F. Raab. Solid State Radio Engineering.
D Diameter of coil mil 210.0
L Length of coil mil 400.0
AWG Wire gauge None 20
TAPIND2 (Tapped Aircore Inductor (Wire Gauge)) 4-65
Equivalent Circuit
4-66 X9TO1COR (9:1 Transformer with Ferrite Core)
X9TO1COR (9:1 Transformer with Ferrite Core)
Symbol
Parameters
Range of Usage
Z, Len > 0
A, F, AL 0
K, N 1
Notes/Equations
1. Thi s transmi ssi on-l i ne transformer compri ses TEM transmi ssi on l i nes and
choking i nductances connected as i ndi cated by the Equi val ent Ci rcui t
i l l ustrati on that fol l ows.
2. The val ue of L
c
i s: L
c
= N
2
AL
K Effective dielectric constant for transmission lines None 2.0
X9TO1COR (9:1 Transformer with Ferrite Core) 4-67
thermal noi se).
Equivalent Circuit
(Z, Len, K, A, F)
(Z, Len, K, A, F)
Lc
Lc
2
1
Lc
4-68 X9TO4COR (9:4 Transformer with Ferrite Core)
X9TO4COR (9:4 Transformer with Ferrite Core)
Symbol
Parameters
Range of Usage
Z, Len > 0
A, F, AL 0
K, N 1
Notes/Equations
2. The val ue of L
c
i s: L
c
= N
2
AL
K Effective dielectric constant for transmission line None 2.0
X9TO4COR (9:4 Transformer with Ferrite Core) 4-69
thermal noi se).
Equivalent Circuit
(Z, LEN, K, A, F)
(Z, LEN, K, A, F)
Lc
Lc
2 1
Lc
4-70 X9TO1SLV (9:1 Transformer with Ferrite Sleeve)
X9TO1SLV (9:1 Transformer with Ferrite Sleeve)
Symbol
Parameters
Range of Usage
Z, Len > 0
A, F, AL 0
K, N 1
Notes/Equations
2. The val ue of L
c
i s: L
c
= Mu L Len
thermal noi se).
K Effective dielectric constant for transmission line None 2.0
L Inductance index (per unit length) without ferrite sleeves nH 1.0
X9TO1SLV (9:1 Transformer with Ferrite Sleeve) 4-71
Equivalent Circuit
(Z, LEN, K, A, F)
(Z, LEN, K, A, F)
Lc
Lc
2
1
Lc
4-72 X9TO4SLV (9:4 Transformer with Ferrite Sleeve)
X9TO4SLV (9:4 Transformer with Ferrite Sleeve)
Symbol
Parameters
Range of Usage
Z, Len > 0
A, F, AL 0
K, N 1
Notes/Equations
2. The val ue of L
c
i s: L
c
= MU L Len
thermal noi se).
K Effective dielectric constant for transmission lines None 2.0
A Attenuation of transmission lines dB/unit length 0.0
L Inductance index (inductance/meter) of the line without the sleeve nH 1.0
X9TO4SLV (9:4 Transformer with Ferrite Sleeve) 4-73
Equivalent Circuit
(Z, LEN, K, A, F)
(Z, LEN, K, A, F)
Lc
Lc
2 1
Lc
4-74 XFERTL1 (Transmission Line Transformer (Ferrite Core))
XFERTL1 (Transmission Line Transformer (Ferrite Core))
Symbol
Parameters
Range of Usage
Z > 0, Len > 0, K 1, F 0, A 0, N 1, AL > 0, Order 1
Notes/Equations
1. TEM transmi ssi on l i nes, each speci fi ed by Z, Len, K, A and F, are connected i n
paral l el at one end (pi ns 1 and 3) and i n seri es at the other (pi ns 2 and 4). The
number of l i nes i s equal to Order and the l i nes are coi l ed around a ferri te core.
Transformati on rati o = (Order)
2
: 1
2. The choki ng i nductance L
c
accounts for the l ow-frequency rol l -off and i s gi ven
by L
c
= N
2
AL
K Effective dielectric constant of transmission line None 2.0
F Frequency for scaling attenuation of transmission line GHz 1.0
Order Number of transmission lines Integer 1
TanD Dielectric loss tangent of transmission line None 0
Mur Relative permeability of transmission line None 1
TanM Magnetic loss tangent of transmission line None 0
Sigma Dielectric conductivity of transmission line None 0
XFERTL1 (Transmission Line Transformer (Ferrite Core)) 4-75
3. A(f) = A (for F = 0)
A(f) = A(F) (for F 0)
where
F = reference frequency
4. The attenuati on parameter A speci fi es transmi ssi on l i ne conductor l oss onl y;
for a frequency-dependent di el ectri c l oss, speci fy a non-zero val ue for TanD
for a constant di el ectri c l oss, speci fy a non-zero val ue for Si gma.
thermal noi se).
References
[1] E. Rothol z, Transmi ssi on-l i ne transformers, I EEE Transactions on Microwave
Theory and Technology, Vol . MTT- 29, No.4, Apri l 1981, pp. 327-331.
[2] Jerry Sevi ck, Transmission Line Transformers, 2nd Ed., Ameri can Radi o Rel ay
f
F
----
4-76 XFERTL1 (Transmission Line Transformer (Ferrite Core))
Equivalent Circuit
XFERTL2 (Transmission Line Transformer (Ferrite Sleeve)) 4-77
XFERTL2 (Transmission Line Transformer (Ferrite Sleeve))
Symbol
Parameters
Range of Usage
Z > 0, Len > 0, K 1, A 0, F 0, Mu > 0, L > 0, Order 1
Notes/Equations
1. I deal transmi ssi on l i nes, each speci fi ed by Z, Len, K, A and F, are connected i n
paral l el at one end (pi ns 1 and 3) and i n seri es at the other (pi ns 2 and 4). The
number of l i nes i s equal to Order and the l i nes are surrounded by a ferri te
sl eeve.
Transformati on rati o = (Order)
2
: 1
2. The choki ng i nductance L
c
accounts for the l ow-frequency rol l -off and i s gi ven
by L
c
= Mu L Len
K Effective dielectric constant of transmission line None 2.0
F Frequency for scaling attenuation of transmission line GHz 1.0
L Inductance (per unit length) of line without the sleeve nH 20.0
Order Number of transmission lines Integer 1
TanD Dielectric loss tangent of transmission line None 0
Mur Relative permeability of transmission line None 1
TanM Magnetic loss tangent of transmission line None 0
Sigma Dielectric conductivity of transmission line None 0
4-78 XFERTL2 (Transmission Line Transformer (Ferrite Sleeve))
3. A(f) = A (for F = 0)
A(f) = A(F) (for F 0)
where
4. The attenuati on parameter A speci fi es transmi ssi on l i ne conductor l oss onl y;
for a frequency-dependent di el ectri c l oss, speci fy a non-zero val ue for TanD
for a constant di el ectri c l oss, speci fy a non-zero val ue for Si gma.
thermal noi se).
References
[1] E. Rothol z, Transmi ssi on-l i ne transformers, I EEE Transactions on Microwave
Theory and Technology, Vol . MTT- 29, No.4, Apri l 1981, pp. 327-331.
[2] Jerry Sevi ck, Transmission Line Transformers, 2nd Ed., Ameri can Radi o Rel ay
f
F
----
XFERTL2 (Transmission Line Transformer (Ferrite Sleeve)) 4-79
Equivalent Circuit
4-80 XTAL1 (Piezoelectric Crystal with Holder)
XTAL1 (Piezoelectric Crystal with Holder)
Symbol
Parameters
Range of Usage
C > 0, L > 0
Notes/Equations
1. The moti onal arm i s represented by R, L and C. Cp i s the stati c capaci tance
associ ated wi th the crystal , the el ectrodes and the crystal encl osure.
2. User i nputs are assumed to be the actual val ues of C and R at the speci fi ed
overtone. Thus, the val ues of C
n
, R
n
, and L
n
are, for n any odd i nteger
C
n
= (OT/n)
2
C
R
n
= (n/OT)
2
R
L
n
= L
3. The val ue of N (refer to the equi val ent ci rcui t i l l ustrati on) i s
N = (OT + 1) / 2 + 5
that i s, N i s the set of odd i ntegers {1, 3, 5, ... , OT, OT+2, OT+4, OT+6, OT+8,
OT+10}. Thi s means that al l odd sub harmoni cs of OT as wel l as fi ve odd
harmoni cs above OT are i ncl uded regardl ess of the val ue of OT.
C Motional capacitance fF 9.1189
L Motional inductance mH 10.0
R Motional resistance Ohm 15.9
Cp Static capacitance pF 0.4537
OT Overtone number; Value = 1, 3, or 5 None 3
XTAL1 (Piezoelectric Crystal with Holder) 4-81
thermal noi se).
References
[1] Arthur Bal l ato, Pi ezoel ectri c Resonators, Design of Crystal and Other
Harmonic Oscillators, Benjami n Parzen, John Wi l ey & Sons; 1983, Chapter 3,
pp. 66-122.
[2] Marvi n E. Frerki ng, Crystal Oscillator Design and Temperature Compensation,
Van Nostrand Rei nhol d Company; 1978.
[3] Eri ch Hafner, The Pi ezoel ectri c Crystal Uni tDefi ni ti ons and Methods of
Measurement, Proceedings of the I EEE, Vol . 57, No. 2, pp. 179-201; February
1969.
Equivalent Circuit
XTAL2 (Piezoelectric Crystal with Holder)
Symbol
Parameters
Range of Usage
C > 0, F > 0, Q > 0
Notes/Equations
1. The moti onal arm i s represented by R, L and C. Cp i s the stati c capaci tance
associ ated wi th the crystal , the el ectrodes and the crystal encl osure.
L = 1 / [ ( 2 F)
2
C]
R = 1 / [(2 F) C Q] (for Q > 0)
R = 0 (for Q = 0)
thermal noi se).
References
[1] Arthur Bal l ato, Pi ezoel ectri c Resonators, Design of Crystal and Other
Harmonic Oscillators, Benjami n Parzen, John Wi l ey & Sons, 1983, Chapter 3,
pp. 66-122.
C Motional capacitance fF 9.1189
F Resonant frequency MHz 50.0
Q Unloaded Q None 65862.0
Cp Static capacitance pF 0.4537
OT Overtone number; Value = 1, 3, or 5 None 3
XTAL2 (Piezoelectric Crystal with Holder) 4-83
[2] Marvi n E. Frerki ng, Crystal Oscillator Design and Temperature Compensation,
Van Nostrand Rei nhol d Company, 1978.
[3] Eri ch Hafner, The Pi ezoel ectri c Crystal Uni tDefi ni ti ons and Methods of
Measurement, Proceedings of the I EEE, Vol . 57, No. 2, February 1969, pp.
179-201.
Equivalent Circuit
5-1
Chapter 5: Stripline Components
5-2 SBCLIN (Broadside-Coupled Lines in Stripline)
Stripline Components
SBCLIN (Broadside-Coupled Lines in Stripline)
Symbol
Illustration
Available in ADS
Parameters
Subst Substrate instance name None SSub1
S Spacing between bines; refer to note 3 and note 4 mil 10.0
P1Layer (for Layout option) Layer associated with pin 1 conductor: cond1, cond2 None cond1
SBCLIN (Broadside-Coupled Lines in Stripline) 5-3
Range of Usage
Er 1
0.35
0.9
0.7
where
Er = di el ectri c constant (from associ ated SSUB(O))
B = ground pl ane spaci ng (from associ ated SSUB(O))
S = center l ayer thi ckness (conductor spaci ng)
Notes/Equations
1. Conductor thi ckness correcti on i s appl i ed i n the frequency-domai n anal yti cal
model .
2. Coupl ed l i nes are paral l el to the ground pl ane.
3. Components that refer to an SSUBO wi th S=0 gi ve the same si mul ati on resul ts
as i f they refer to an otherwi se equi val ent SSUB.
4. I f the Subst parameter refers to an SSUBO, the SSUBOs spaci ng parameter (S)
val ue i s used rather than the component spaci ng parameter (S). Thi s i s true
regardl ess of whether the components S i s set to a real val ue or to unspecified.
I f i t i s set to a real val ue, a warni ng message i s di spl ayed.
5. For coupl ed-stri pl i ne of negl i gi bl e thi ckness (T=0), the even- and odd-mode
characteri sti c l i ne i mpedances are cal cul ated from the exact formul a deri ved by
Shel ton usi ng conformal mappi ng. For a stri pl i ne of fi ni te thi ckness, an
approxi mate model devel oped by Wi l l i am Getsi nger for Agi l ent and based on
the formul a of Shel ton, Cohn, and Wheel er i s used to cal cul ate the even- and
odd-mode i mpedances. Addi ti onal l y, the attenuati on formul a devel oped by
Wheel er i s used. The attenuati on formul a provi des a smooth transi ti on from dc
resi stance to resi stance due to ski n effect at hi gh frequenci es. Di el ectri c l oss i s
al so i ncl uded i n the model .
W
B S
--------------
S
B
----
W
S
-----
5-4 SBCLIN (Broadside-Coupled Lines in Stripline)
thermal noi se).
References
[1] S. B. Cohn, Thi ckness Correcti ons for Capaci ti ve Obstacl es and Stri p
Conductors, I RE Trans. Microwave Theory and Techniques, Vol . MTT-8,
November, 1960, pp. 638-644.
[2] J. P. Shel ton, I mpedance of Offset Paral l el -Coupl ed Stri p Transmi ssi on Li nes,
I EEE Trans. Microwave Theory and Techniques, Vol . MTT-14, January, 1966,
pp. 7-15.
1942, pp. 412-424.
SBEND (Unmitered Stripline Bend) 5-5
SBEND (Unmitered Stripline Bend)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W 0
Angl e = any val ue i n Layout
15 Angl e 120 (for 1)
0.25 1.75 (for Angl e = 90)
where
B = ground pl ane spaci ng (from associ ated SSUB)
Layer (for Layout option) conductor layer number: cond1, cond2 None cond1
Angle
W
B
-----
W
B
-----
5-6 SBEND (Unmitered Stripline Bend)
Notes/Equations
1. The frequency-domai n anal yti cal model i s the stati c, l umped component model
of Al tschul er and Ol i ner. The formul as are based on a theoreti cal anal ysi s of the
E-pl ane bend i n paral l el -pl ate wavegui de. Conductor and di el ectri c l osses are
not i ncl uded i n the si mul ati on.
2. I f the Subst parameter refers to an SSUBO whose spaci ng parameter S has a
non-zero val ue, the component i s consi dered offset for l ayout and
el ectromagneti c anal ysi s purposes. For other types of anal yses, the offset i s
i gnored.
thermal noi se).
References
[1] H. M. Al tschul er and A. A. Ol i ner. Di sconti nui ti es i n the Center Conductor of
Symmetri c Stri p Transmi ssi on Li ne, I EEE Transactions on Microwave Theory
and Techniques, Vol . MTT-8, May, 1960. (Cf. Secti on I I I -H.)
Equivalent Circuit
L
L
C
SBEND2 (Stripline Bend -- Arbitrary Angle/Miter) 5-7
SBEND2 (Stripline Bend -- Arbitrary Angle/Miter)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W 5.7
B 0.2
W 0.2
M Miter fraction None 0.6
Layer
(for Layout option) Conductor layer number: cond1, cond2
None cond1
Angle
Angle
5-8 SBEND2 (Stripline Bend -- Arbitrary Angle/Miter)
M 0.01 Angl e (degrees)
M 0.8
20 Angl e 150
where
W 0 for Layout
Notes/Equations
1. The frequency-domai n anal yti cal model i s a stati c, l umped component model
devel oped for Agi l ent by Wi l l i am J. Getsi nger. The model i s based on the
wavegui de E-pl ane paral l el -pl ate model anal yzed by J. Schwi nger and
publ i shed i n Marcuvi tz's book, Waveguide Handbook. Based on the work of
Ol i ner, the wavegui de model i s transformed i nto i ts dual stri pl i ne model .
Conductor and di el ectri c l osses are i ncl uded i n the si mul ati on. Reference pl ane
shi fts are added for l arge mi ters (M > M
s
).
i gnored.
3. There are two possi bl e reference pl ane l ocati ons avai l abl e:
Smal l mi ters where the reference pl anes l i ne up wi th the i nner corner of the
bend.
Large mi ters where the reference pl anes l i ne up wi th the corner between the
connecti ng stri p and the mi tered secti on.
thermal noi se).
References
SBEND2 (Stripline Bend -- Arbitrary Angle/Miter) 5-9
Digest, May 1983, pp. 495-497.
[3] N. Marcuvi tz, Waveguide Handbook, McGraw-Hi l l , 1951, pp. 337-350.
[4] A. Ol i ner, Equi val ent Ci rcui ts For Di sconti nui ti es i n Bal anced Stri p
Transmi ssi on Li ne, I RE Trans. on Microwave Theory and Techniques, Vol .
MTT-3, March 1955, pp. 134-143.
5-10 SCLIN (Edge-Coupled Lines in Stripline)
SCLIN (Edge-Coupled Lines in Stripline)
Symbol
Illustration
Available in ADS
Parameters
W1 (for Layout option) Width of line that connects to pin 1 None 5.0
Layer (for Layout option) Conductor layer number: cond1, cond2 None cond1
SCLIN (Edge-Coupled Lines in Stripline) 5-11
Range of Usage
S > 0
W 0.35 B (for T > 0)
W > 0 (for T = 0)
T < 0.1 B
where
T = conductor thi ckness (from associ ated SSUB)
Notes/Equations
1. The frequency-domai n anal yti cal model i s as fol l ows. For centered
coupl ed-stri pl i ne of negl i gi bl e thi ckness (T=0), the even- and odd-mode
Cohn usi ng conformal mappi ng. For a centered coupl ed-stri pl i ne of fi ni te
thi ckness, Cohns approxi mate formul a i s used i n conjuncti on wi th Wheel ers
attenuati on formul a. The attenuati on formul a provi des a smooth transi ti on
from dc resi stance to resi stance due to ski n effect at hi gh frequenci es. Di el ectri c
l oss i s al so i ncl uded i n the model .
i gnored.
thermal noi se).
References
[2] S. B. Cohn. Shi el ded Coupl ed-Stri p Transmi ssi on Li ne, I RE Trans. Mi crowave
Theory and Techni ques, Vol . MTT-3, October, 1955, pp. 29-38.
5-12 SCLIN (Edge-Coupled Lines in Stripline)
Circuits, Artech House, I nc., 1981.
[4] H. A. Wheel er. Formul as for the Ski n Effect, Proc. I RE, Vol . 30, September,
1942, pp. 412-424.
SCROS (Stripline Cross Junction) 5-13
SCROS (Stripline Cross Junction)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
where
Zo = characteri sti c i mpedance of the wi dest stri p i n ohms
B = ground pl ane spaci ng i n mi l l i meters
Zo
B
-------
5-14 SCROS (Stripline Cross Junction)
Notes/Equations
1. The frequency-domai n anal yti cal model i s a frequency dependent, l umped
component model devel oped for Agi l ent by Wi l l i am J. Getsi nger. The model i s
an extensi on of the stri pl i ne T-juncti on model . The T-juncti on model i s based on
the wavegui de E-pl ane paral l el -pl ate model anal yzed by J. Schwi nger and
publ i shed i n Marcuvi tz's book, Waveguide Handbook. Based on the work of
Conductor and di el ectri c l osses are not i ncl uded i n the si mul ati on.
i gnored.
4. I n Layout, al l pi ns are centered at the correspondi ng edges.
thermal noi se).
References
[1] N. Marcuvi tz. Waveguide Handbook, McGraw-Hi l l , 1951, pp. 337-350.
[2] A. Ol i ner. Equi val ent Ci rcui ts For Di sconti nui ti es i n Bal anced Stri p
MTT-3, March 1955, pp. 134-143.
SCROS (Stripline Cross Junction) 5-15
Equivalent Circuit
5-16 SCURVE (Curved Line in Stripline)
SCURVE (Curved Line in Stripline)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
RAD
where
Radius
Angle
W B 2 +
2
-----------------------
SCURVE (Curved Line in Stripline) 5-17
Notes/Equations
1. The frequency-domai n anal yti cal model consi sts of an equi val ent pi ece of
strai ght stri pl i ne. The model was devel oped for Agi l ent by Wi l l i am J. Getsi nger
and i s based on the wavegui de E-pl ane paral l el -pl ate model anal yzed by J.
Schwi nger and publ i shed i n Marcuvi tz's book, Waveguide Handbook. Fol l owi ng
the work of Ol i ner, the wavegui de model i s transformed i nto i ts dual stri pl i ne
model . Conductor and di el ectri c l osses are i ncl uded i n the si mul ati on.
Di sconti nui ty effects accounted for are those due to radi us onl y.
i gnored.
4. I n l ayout, a posi ti ve val ue for Angl e draws a curve i n the countercl ockwi se
di recti on; a negati ve val ue draws a curve i n the cl ockwi se di recti on.
thermal noi se).
References
[1] N. Marcuvi tz. Waveguide Handbook, McGraw-Hi l l , 1951, pp. 337-350.
[2] A. Ol i ner. Equi val ent Ci rcui ts For Di sconti nui ti es i n Bal anced Stri p
MTT-3, March 1955, pp. 134-143.
5-18 SLEF (Stripline Open-End Effect)
SLEF (Stripline Open-End Effect)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
0.15
< 0.1
where
Notes/Equations
1. The frequency-domai n anal yti cal model consi sts of an extensi on to the l ength of
the stri pl i ne stub. The stri pl i ne i s model ed usi ng the SLI N model for thi n (T=0)
and thi ck (T>0) stri pl i ne, i ncl udi ng conductor and di el ectri c l oss. The l ength of
W
B
-----
T
B
----
SLEF (Stripline Open-End Effect) 5-19
the extensi on of the stri pl i ne, dl , i s based on the formul a devel oped by
Al tschul er and Ol i ner.
i gnored.
thermal noi se).
References
[1] H. M. Al tschul er, and A. A. Ol i ner, Di sconti nui ti es i n the Center Conductor of
Symmetri c Stri p Transmi ssi on Li ne, I RE Trans. Microwave Theory and
Techniques, Vol . MTT-8, May 1960, pp. 328-339.
Equivalent Circuit
Z
0
Z
0
dl l
5-20 SLIN (Stripline)
SLIN (Stripline)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W > 0 (for T = 0)
W 0.35 B (for T > 0)
T 0.25 B
where
Notes/Equations
1. The frequency-domai n anal yti cal model i s as fol l ows. For centered stri pl i ne of
negl i gi bl e thi ckness (T=0), the characteri sti c l i ne i mpedance i s cal cul ated from
the exact formul a deri ved by Cohn usi ng conformal mappi ng. For a centered
stri pl i ne of fi ni te thi ckness, Wheel er's approxi mate formul a for the
SLIN (Stripline) 5-21
characteri sti c l i ne i mpedance and attenuati on factor are used. The attenuati on
formul a provi des a smooth transi ti on from dc resi stance to resi stance due to
ski n effect at hi gh frequenci es. Di el ectri c l oss i s al so i ncl uded i n the model .
2. For offset stri pl i ne, a model devel oped by Wi l l i am Getsi nger for Agi l ent and
based on the formul a of Shel ton, Cohn and Wheel er i s used. For an offset
stri pl i ne of negl i gi bl e thi ckness (T=0), the characteri sti c l i ne i mpedance i s
cal cul ated from the exact formul a deri ved by Shel ton usi ng conformal mappi ng.
For an offset stri pl i ne of fi ni te thi ckness, Shel ton's exact formul a i s combi ned
wi th Cohn's formul a for a centered thi ck stri pl i ne to formul ate an approxi mate
formul a. Addi ti onal l y, the attenuati on formul a devel oped by Wheel er i s used.
The attenuati on formul a provi des a smooth transi ti on from dc resi stance to
resi stance due to ski n effect at hi gh frequenci es. Di el ectri c l oss i s al so i ncl uded
i n the model .
non-zero val ue, the component i s consi dered offset for si mul ati on and l ayout
purposes. A reference to SSUBO wi th i ts spaci ng parameter S=0 i s equi val ent
to a reference to the SSUB.
thermal noi se).
References
[1] S. B. Cohn, Characteri sti c I mpedance of the Shi el ded-Stri p Transmi ssi on
Li ne, I RE Trans. Microwave Theory and Techniques, Vol . MTT-2, Jul y, 1954, pp.
52-55.
[2] S. B., Cohn, Probl ems i n Stri p Transmi ssi on Li nes, I RE Trans. Microwave
Theory and Techniques, Vol . MTT-3, March, 1955, pp. 119-126.
pp. 7-15.
[5] H. A. Wheel er, Transmi ssi on Li ne Properti es of a Stri pl i ne Between Paral l el
Pl anes, I EEE Trans. Microwave Theory and Techniques, Vol . MTT-26,
November, 1978, pp. 866-876.
5-22 SLIN (Stripline)
1942, pp. 412-424.
SLINO (Offset Strip Transmission Line) 5-23
SLINO (Offset Strip Transmission Line)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
0.35
where
S < 0.9 B
S < B - 2*T
S Middle dielectric layer thickness; refer to note 2 and note 3 mil 31.25
S-dimension region is centered between
the ground planes
W
B S T +
------------------------
5-24 SLINO (Offset Strip Transmission Line)
Notes/Equations
1. The frequency-domai n anal yti cal model i s as fol l ows. For offset stri pl i ne, a
model devel oped by Wi l l i am Getsi nger for negl i gi bl e thi ckness (T=0), the
characteri sti c l i ne i mpedance i s cal cul ated from the exact and based on the
formul a of Shel ton, Cohn and Wheel er i s used. For an offset stri pl i ne of
the exact formul a deri ved by Shel ton usi ng conformal mappi ng. For an offset
stri pl i ne of fi ni te thi ckness, Shel ton's exact formul a i s combi ned wi th Cohn's
formul a for a centered thi ck stri pl i ne to formul ate an approxi mate formul a.
Addi ti onal l y, the attenuati on formul a devel oped by Wheel er i s used. The
attenuati on formul a provi des a smooth transi ti on from dc resi stance to
i n the model .
3. I f the Subst parameter refers to an SSUBO, the SLI NO spaci ng parameter (S)
val ue i s used rather than the SSUBO spaci ng parameter (S). Thi s i s true
regardl ess of whether the components S i s set to a real val ue or to unspecified.
I f i t i s set to a real val ue, a warni ng message i s di spl ayed. I f the SLI NO spaci ng
parameter (S) i s unspeci fi ed, the SSUBO spaci ng parameter (S) i s used. I f the
Subst parameter refers to an SSUB (rather than to an SSUBO) the components
val ue for S i s al so used.
thermal noi se).
References
52-55.
[2] S. B. Cohn, Probl ems i n Stri p Transmi ssi on Li nes, I RE Trans. Microwave
pp. 7-15.
SLINO (Offset Strip Transmission Line) 5-25
November, 1978, pp. 866-876.
[5] H. A. Wheel er, Formul as for the Ski n Effect, Proc. I RE, Vol. 30, September,
1942, pp. 412-424.
5-26 SLOC (Stripline Open-Circuited Stub)
SLOC (Stripline Open-Circuited Stub)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
0.25
where
Notes/Equations
1. The frequency-domai n anal yti cal model i s as fol l ows. For centered stri pl i ne of
T
B
----
SLOC (Stripline Open-Circuited Stub) 5-27
the exact formul a deri ved by Cohn usi ng conformal mappi ng. For a centered
stri pl i ne of fi ni te thi ckness, Wheel er's approxi mate formul a for the
characteri sti c l i ne i mpedance and attenuati on factor are used. The attenuati on
formul a provi des a smooth transi ti on from dc resi stance to resi stance due to
ski n effect at hi gh frequenci es. Di el ectri c l oss i s al so i ncl uded i n the model .
wi th Cohns formul a for a centered thi ck stri pl i ne to formul ate an approxi mate
i n the model . No end effects are i ncl uded i n the model .
to a reference to SSUB.
thermal noi se).
References
52-55.
[2] S. B. Cohn, Probl ems i n Stri p Transmi ssi on Li nes, I RE Trans. Microwave
[3] K. C.Gupta, R. Garg, and R. Chadha. Computer-Aided Design of Microwave
pp. 7-15.
5-28 SLOC (Stripline Open-Circuited Stub)
November, 1978, pp. 866-876.
1942, pp. 412-424.
SLSC (Stripline Short-Circuited Stub) 5-29
SLSC (Stripline Short-Circuited Stub)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
0.25
where
T
B
----
5-30 SLSC (Stripline Short-Circuited Stub)
Notes/Equations
1. For centered stri pl i ne of negl i gi bl e thi ckness (T = 0), the characteri sti c l i ne
i mpedance i s cal cul ated from the exact formul a deri ved by Cohn usi ng
conformal mappi ng. For a centered stri pl i ne of fi ni te thi ckness, Wheel er's
approxi mate formul a for the characteri sti c l i ne i mpedance and attenuati on
factor are used. The attenuati on formul a provi des a smooth transi ti on from dc
wi th Cohn's formul a for a centered thi ck stri pl i ne to formul ate an approxi mate
i n the model . No end effects are i ncl uded i n the model .
to a reference to SSUB.
thermal noi se).
References
Li ne, I RE Trans. Mi crowave Theory and Techni ques, Vol . MTT-2, Jul y, 1954,
pp. 52-55.
[2] S. B. Cohn, Probl ems i n Stri p Transmi ssi on Li nes, I RE Trans. Mi crowave
Theory and Techni ques, Vol . MTT-3, March, 1955, pp. 119-126.
SLSC (Stripline Short-Circuited Stub) 5-31
pp. 7-15.
November, 1978, pp. 866-876.
1942, pp. 412-424.
5-32 SMITER (90-degree Stripline Bend -- Optimally Mitered)
SMITER (90-degree Stripline Bend -- Optimally Mitered)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
0.2 B W 3 B
where
Notes/Equations
chamfered bend i s model ed as a matched stri pl i ne l i ne of l ength, l
o
+l
ext
. The
effecti ve l ength of the bend and the opti mal chamfered di mensi on are
a
a
SMITER (90-degree Stripline Bend -- Optimally Mitered) 5-33
cal cul ated based on curve fi ts to empi ri cal data i n Matthaei , Young, and Jones.
The stri pl i ne i s model ed usi ng the SLI N model for thi n (T=0) and thi ck (T>0)
stri pl i ne, i ncl udi ng conductor and di el ectri c l oss.
For l
o
:
I f (W/B 0.2)
l
o
/W = 0.56528 + 0.023434 (W/B 0.2)
I f (0.2 < W/B 3.0)
l
o
/W = 0.56528 + 0.01369 (W/B 0.2)
0.77684
+ 0.01443 (W/B 0.2)
2.42053
I f (W/B > 3.0)
l
o
/W = 0.770175 + 0.155473 (W/B 3.0)
For l
ext
:
I f (a > W)
l
ext
= 2 (a W)
I f (a W)
l
ext
= 0.0
i gnored.
3. The artwork i s dependent on the parameters gi ven i n the SSUB or SSUBO.
Layout artwork requi res pl aci ng a SSUB or SSUBO, pri or to pl aci ng the
component di rectl y i n the Layout wi ndow.
4. The mi ter fracti on (a/W) i s cal cul ated usi ng one of the formul ae gi ven bel ow
dependi ng on the parameter val ues.
I f (W/B < 0.2),
a/W = 1.267472 0.35041 (W/B 0.2).
I f (0.2 W/B 1.6),
a/W = 1.012 + (1.6 W/B) (0.08 + (1.6 - W/B)
5-34 SMITER (90-degree Stripline Bend -- Optimally Mitered)
(0.013 + ((1.6 - W/B) 0.043))).
I f (1.6 W/B 14.25), a/W = 0.884 + 0.08 (3.2 W/B).
thermal noi se).
References
[1] Harl an Howe, Jr, Stripline Circuit Design, Artech House, I nc., 1982.
[2] G. Matthaei , L. Young, E. M. T. Jones. Microwave Filters, I mpedance-Matching
Networks and Coupling Structures, Artech House, I nc., 1980, pp 203, 206.
Equivalent Circuit
Z
0
(W,B,ER)
l
o
+ l
ext
SOCLIN (Offset-Coupled Lines in Stripline) 5-35
SOCLIN (Offset-Coupled Lines in Stripline)
Symbol
Illustration
Available in ADS
Parameters
WO Conductor offset mil 15.0
W1 (for Layout option) Offset from pin 1 to conductor centerline mil 5.0
W4 (for Layout option) Offset from pin 4 to conductor centerline4 mil 5.0
P1Layer (for Layout option) Layer associated with pin 1 conductor: cond1, cond2 None cond1
5-36 SOCLIN (Offset-Coupled Lines in Stripline)
Range of Usage
Er 1
0.35
0.9
where
Er = di el ectri c constant (from associ ated SSUB)
Notes/Equations
1. The frequency-domai n anal yti cal model i s as fol l ows. For l ateral l y-offset
coupl ed-stri pl i ne of negl i gi bl e thi ckness (T=0), the even- and odd-mode
Shel ton usi ng conformal mappi ng. For a l ateral l y-offset coupl ed-stri pl i ne of
fi ni te thi ckness, a model devel oped by Wi l l i am Getsi nger for Agi l ent and based
on the formul a of Shel ton, Cohn and Wheel er i s used to cal cul ate the even- and
odd-mode i mpedances. Addi ti onal l y, the attenuati on formul a devel oped by
Wheel er i s used. The attenuati on formul a provi des a smooth transi ti on from dc
2. Coupl ed l i nes are paral l el to the ground pl ane.
4. I f the Subst parameter refers to an SSUBO, the SSUBO spaci ng parameter (S)
val ue i s used rather than the component spaci ng parameter (S). Thi s i s true
regardl ess of whether the components S i s set to a real val ue or to unspeci fi ed.
I f i t i s set to a real val ue, a warni ng message i s di spl ayed. I f the Subst
parameter refers to an SSUB (rather than to an SSUBO), the components
val ue for S i s used.
6. W1, W2, W3 and W4 are l ayout-onl y parameters and onl y affect the
el ectromagneti c si mul ati on resul ts. W1, W2, W3 and W4 cannot exceed W/2.
W
B S
-----------
S
B
----
SOCLIN (Offset-Coupled Lines in Stripline) 5-37
thermal noi se).
References
Conductors, I RE Trans. Microwave Theory and Techniques, Vol . MTT-8,
November, 1960, pp. 638-644.
[2] J. Paul Shel ton, Jr. I mpedances of Offset Paral l el -Coupl ed Stri p Transmi ssi on
Li nes, I EEE Transactions On Microwave Theory and Techniques, Vol . MTT-14,
January, 1966, pp. 7-15.
1942, pp. 412-424
5-38 SSTEP (Stripline Step in Width)
SSTEP (Stripline Step in Width)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
0.1
10
W1 0.2
W2 = 0.2
where
= wave l ength i n the di el ectri c
Notes/Equations
1. The frequency-domai n anal yti cal model i s the l umped component model of
Al tschul er and Ol i ner. The model i ncl udes reference pl ane adjustments to al i gn
the natural reference pl ane of the di sconti nui ty wi th the reference pl ane of the
l ayout. The SLI N stri pl i ne model i s used to model these reference pl ane shi fts.
W2
W1
--------
SSTEP (Stripline Step in Width) 5-39
i gnored.
3. I n l ayout, SSTEP al i gns the centerl i nes of the stri ps.
thermal noi se).
References
and Techniques, Vol . MTT-8, May 1960. (Cf. Secti on I I I -H.)
Equivalent Circuit
L
Z
2
Z
1
l
2
l
1
5-40 SSUB (Stripline Substrate)
SSUB (Stripline Substrate)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Er 1.0
B > 0
T 0
Notes/Equations
1. SSUB sets up stri pl i ne substrate parameters for one or more stri pl i ne
components. Ei ther an SSUB or SSUBO i s requi red for al l stri pl i ne
components. For offset center conductor l ayers, use SSUBO.
B Ground plane spacing mil 62.5
Cond1 (for Layout option) Layer to which cond is mapped None cond
Cond2
(for Layout option) Layer to which cond2 is mapped
None cond2
Er
SSUB (Stripline Substrate) 5-41
2. Gol d conducti vi ty i s 4.110
7
7.
3. The parameters Cond1 and Cond2 control the mask l ayers on whi ch the
conductors are drawn. These are l ayout-onl y parameters and are not used by
the si mul ator.
I n the case of SBCLI N and SOCLI N, the component parameter P1Layer
i denti fi es the vi rtual l ayer (cond1 or cond2) that the conductor associ ated wi th
pi n 1 i s drawn on. Al l other stri pl i ne components have a Layer parameter that
i denti fi es the vi rtual l ayer (cond1 or cond2) on whi ch the conductor i s drawn.
The vi rtual l ayer referred to by P1Layer or Layer (cond1 or cond2) i s mapped to
an actual mask l ayer by the Cond1 or Cond2 parameter of the appropri ate
SSUB or SSUBO.
5-42 SSUBO (Offset Stripline Substrate)
SSUBO (Offset Stripline Substrate)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Er 1.0
S 0
B > 0
T 0
S < 0.9 B
S < B - 2*T
S Inter-layer spacing mil 31.25
B Ground plane spacing mil 62.5
Cond1 (for Layout option) Layer to which cond1 is mapped None cond
Cond2 (for Layout option) Layer to which cond2 is mapped None cond2
B
Upper conductor T
S
Lower gnd plane
Upper gnd plane
Lower conductor
Center
T
SSUBO (Offset Stripline Substrate) 5-43
Notes/Equations
1. Thi s i tem speci fi es stri pl i ne substrate wi th two conductor l ayers l ocated
symmetri cal l y between ground pl anes. I t can al so be used for speci fyi ng
stri pl i ne substrate wi th an offset center conductor l ayer. The onl y di fference
between SSUB and SSUBO i s that spaci ng parameter S i s added to SSUBO to
support the offset conductor. The underl yi ng model s are the same.
2. A stri pl i ne Subst parameter can ei ther refer to an SSUB or an SSUBO. From a
si mul ati on vi ewpoi nt, reference to SSUBO i s meani ngful onl y for the SBCLI N,
SOCLI N, SLI NO, SLI N, SLOC, SLEF, and SLSC, because the i ntri nsi c model s
for these components support offset conductor confi gurati on. For al l other
stri pl i ne components, a reference to SSUBO i s effecti vel y the same as a
reference to SSUB because the spaci ng parameter of SSUBO i s i gnored.
3. An SSUBO or an SSUB i s requi red for al l stri pl i ne components.
4. Cond1 and Cond2 control the mask l ayers on whi ch the conductors are drawn.
These are l ayout-onl y parameters and are not used by the si mul ator.
7
7.
6. I n the case of SBCLI N and SOCLI N, the parameter P1Layer i denti fi es the
vi rtual l ayer (cond1 or cond2) that the conductor associ ated wi th pi n 1 i s drawn
on. Al l other stri pl i ne components have a Layer parameter that i denti fi es the
vi rtual l ayer (cond1 or cond2) on whi ch the conductor i s drawn.
7. The vi rtual l ayer referred to by P1Layer or Layer (cond1 or cond2) i s mapped to
an actual mask l ayer by the Cond1 or Cond2 parameter of the appropri ate
SSUB or SSUBO.
5-44 STEE (Stripline T-Junction)
STEE (Stripline T-Junction)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
0.1 Z
01
/ Z
03
2.0
where
Z
01
= characteri sti c i mpedance of l i ne connected to pi n 1
Z
03
= characteri sti c i mpedance of l i ne connected to pi n 3
Layer
(for Layout option) Conductor layer number: cond1, cond2
None cond1
STEE (Stripline T-Junction) 5-45
Notes/Equations
1. The frequency-domai n anal yti cal model i s a frequency dependent, l umped
component model devel oped for Agi l ent by Wi l l i am J. Getsi nger. The model i s
based on the wavegui de E-pl ane paral l el -pl ate model anal yzed by J. Schwi nger
and publ i shed i n Marcuvi tz's book, Waveguide Handbook. Based on the work of
Conductor and di el ectri c l osses are not i ncl uded i n the si mul ati on.
i gnored.
3. Model assumes W1 = W2. I f W1 W2, then the wi dth i s cal cul ated as
thermal noi se).
References
[1] N. Marcuvi tz, Waveguide Handbook, McGraw-Hi l l , 1951, pp. 337-350.
[2] A. Ol i ner, Equi val ent Ci rcui ts For Di sconti nui ti es i n Bal anced Stri p
MTT-3, March 1955, pp. 134-143.
W
1
W
2
( )
5-46 STEE (Stripline T-Junction)
Equivalent Circuit
6-1
Chapter 6: Suspended Substrate
Components
6-2 SSCLIN (Suspended Substrate Coupled Lines)
Suspended Substrate Components
SSCLIN (Suspended Substrate Coupled Lines)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Er 1.3
Hu H
Hl 100 H
Subst Substrate instance name None SSSub1
H
100
---------
SSCLIN (Suspended Substrate Coupled Lines) 6-3
W 50 H
S 10 H
where
Er = di el ectri c constant (from SSSUB)
H = substrate thi ckness (from SSSUB)
Hl = l ower ground pl ane to substrate spaci ng (from SSSUB)
Hu = upper ground pl ane to substrate spaci ng (from SSSUB)
Notes/Equations
1. The frequency-domai n anal yti cal model i s a non-di spersi ve stati c and l ossl ess
model . Conductor thi ckness i s i gnored.
3. W1, W2, W3 and W4 are l ayout-onl y parameters and do not affect the
si mul ati on resul ts.
thermal noi se).
References
[1] John I . Smi th, The Even- and Odd-Mode Capaci tance Parameters for Coupl ed
Li nes i n Suspended Substrate, I EEE Trans. Microwave Theory and Techniques,
Vol . MTT-19, May 1971, pp. 424-431.
H
50
----- -
H
10
----- -
6-4 SSLIN (Suspended Substrate Line)
SSLIN (Suspended Substrate Line)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Er 1.0
Hu H
W H
where
Er = di el ectri c constant (of the associ ated substrate)
HU = Hei ght of the cover (of the associ ated substrate)
H = substrate thi ckness (of the associ ated substrate)
Notes/Equations:
1. The frequency-domai n anal yti cal model i s a non-di spersi ve stati c and l ossl ess
model . Conductor thi ckness i s i gnored.
Subst Substrate instance name None SSSub1
H
50
----- -
SSLIN (Suspended Substrate Line) 6-5
thermal noi se).
References
[1] A.K. Verma and G. Hassani Sadr, Uni fi ed Di spersi on Model for Mul ti l ayer
Mi crostri p Li ne, I EEE Trans., MYY-40, Jul y 1992.
6-6 SSSUB (Suspended Substrate)
SSSUB (Suspended Substrate)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Er 1.3
Hu H
0.01 H Hl 100 H
Notes/Equations
1. SSSUB sets up substrate parameters for suspended substrate components and
i s requi red for al l suspended substrates.
Cond Conductor conductivity (for Momentum & HHFS only) S/meter 1.0e+50
Hu Cover height mil 100.0
Hl Lower ground plane spacing mil 100.0
T Conductor thickness (for Momentum & HHFS only) mil 0
TanD Dielectric loss tangent (for Momentum & HHFS only) None 0
SSSUB (Suspended Substrate) 6-7
2. Cond1 control s the l ayer on whi ch the Mask l ayer i s drawn; i t i s a l ayout-onl y
parameter and i s not used by the si mul ator.
6-8 SSSUB (Suspended Substrate)
7-1
Chapter 7: Waveguide Components
7-2 CPW (Coplanar Waveguide)
Waveguide Components
CPW (Coplanar Waveguide)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
0.125 W G 4.5 W
W + 2G 20 H
W > 0
G > 0
Notes/Equations
1. The frequency-domai n anal yti cal model for the copl anar wavegui de was
devel oped for Agi l ent by Wi l l i am J. Getsi nger and i s based on a conformal
mappi ng techni que. The resul ti ng formul as for the characteri sti c l i ne
i mpedance and effecti ve di el ectri c constant are vi rtual l y the same as those
Subst Substrate instance name None CPWSub1
W Center conductor width mil 25.0
G Gap (spacing) between center conductor and ground plane mil 5.0
L Center conductor length mil 100.0
CPW (Coplanar Waveguide) 7-3
publ i shed by Ghi one and Nal di . However, the formul as are extended to account
for conductors of fi ni te thi ckness, conductor l osses and di el ectri c l osses.
The thi ckness correcti on i s based on a techni que proposed by Cohn. The
conductor l osses are cal cul ated usi ng Wheel ers i ncremental i nductance rul e.
resi stance due to ski n effect at hi gh frequenci es. Di spersi on at hi gh frequenci es
i s not i ncl uded i n the model .
2. No l ower ground pl ane i s i ncl uded.
thermal noi se).
References
[1] S. B. Cohn, Thi ckness Correcti ons for Capaci ti ve obstacl es and Stri p
Conductors, I RE Trans. on Microwave Theory and Techniques, Vol . MTT-8,
November 1960, pp. 638-644.
[2] G. Ghi one and C. Nal di . Anal yti cal Formul as for Copl anar Li nes i n Hybri d and
Monol i thi c MI Cs, Electronics Letters, Vol . 20, No. 4, February 16, 1984, pp.
179-181.
1942, pp. 412-424.
7-4 CPWCGAP (Coplanar Waveguide, Center-Conductor Gap)
CPWCGAP (Coplanar Waveguide, Center-Conductor Gap)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W > 0
G > 0
W S 1.4 W
Notes/Equations
1. The center conductor gap i n copl anar wavegui de i s model ed as a stati c, l umped
component ci rcui t. More speci fi cal l y, the network i s a pi -network wi th
capaci ti ve coupl i ng between the center conductors and fri ngi ng capaci tance
from the center conductors to ground. The val ue of the capaci tances are
cal cul ated from formul a devel oped by Wi l l i am Getsi nger for Agi l ent. The
formul a i s based on an anal ysi s of an anal ogous twi n-stri p confi gurati on of the
S gap between end of center conductor and ground plane mil 5.2
CPWCGAP (Coplanar Waveguide, Center-Conductor Gap) 7-5
copl anar di sconti nui ty as proposed by Getsi nger. Addi ti onal l y, metal l i zati on
thi ckness correcti on i s appl i ed.
thermal noi se).
References
[1] Getsi nger, W. J., Ci rcui t Dual s on Pl anar Transmi ssi on Medi a, I EEE MTT-S
I nt'l Microwave Symposium Digest, 1983, pp. 154-156.
Equivalent Circuit
C
p
C
p
C
g
7-6 CPWCPL2 (Coplanar Waveguide Coupler (2 Center Conductors))
CPWCPL2 (Coplanar Waveguide Coupler (2 Center Conductors))
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W > 0
G > 0
S > 0
Notes/Equations
1. The frequency-domai n anal yti cal model for a 2-conductor coupl er i n copl anar
wavegui de was devel oped for Agi l ent by Wi l l i am J. Getsi nger and i s based on a
conformal mappi ng techni que. The resul ti ng formul as for the even and
odd-mode characteri sti c l i ne i mpedances and effecti ve di el ectri c constants
i ncl ude the effects of fi ni te conductor thi ckness, conductor l osses and di el ectri c
l osses.
S gap between end of center conductor and ground plane mil 10.0
CPWCPL2 (Coplanar Waveguide Coupler (2 Center Conductors)) 7-7
conductor l osses are cal cul ated usi ng Wheel er's i ncremental i nductance rul e.
thermal noi se).
References
[1] Basti da, E. and N. Fanel l i . I nterdi gi tal Copl anar Di recti onal Coupl ers,
Electronic Letters, Vol . 16, August 14, 1980, pp. 645-646.
November 1960, pp. 638-644.
[3] C. P. Wen, Copl anar Wavegui de Di recti onal Coupl ers, I EEE Transaction -
MTT-18, June 1970, pp. 318-322.
1942, pp. 412-424.
7-8 CPWCPL4 (Coplanar Waveguide Coupler (4 Center Conductors))
CPWCPL4 (Coplanar Waveguide Coupler (4 Center Conductors))
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W > 0
G > 0
S > 0
Wi > 0
Si > 0
W Width of outer center conductors mil 25.0
G Gap (spacing) between center conductors and ground plane mil 5.0
S Gap between outer and inner center conductors mil 5.0
Wi Width of inner center conductors mil 5.0
Si Gap between inner center conductors mil 5.0
Wi
Si
CPWCPL4 (Coplanar Waveguide Coupler (4 Center Conductors)) 7-9
Notes/Equations
1. The frequency-domai n anal yti cal model for a 4-conductor coupl er i n copl anar
wavegui de was devel oped for Agi l ent by Wi l l i am J. Getsi nger and i s based on a
conformal mappi ng techni que. The resul ti ng formul as for the even and
odd-mode characteri sti c l i ne i mpedances and effecti ve di el ectri c constants
i ncl ude the effects of fi ni te conductor thi ckness, conductor l osses and di el ectri c
l osses.
conductor l osses are cal cul ated usi ng Wheel er's i ncremental i nductance rul e.
2. Al ternate center conductors are di rectl y connected at ends of CPWCPL4
coupl er.
thermal noi se).
References
[1] E. Basti da and N. Fanel l i . I nterdi gi tal Copl anar Di recti onal Coupl ers,
Electronic Letters, Vol . 16, August 14, 1980, pp. 645-646.
November 1960, pp. 638-644.
[3] C. P. Wen, Copl anar Wavegui de Di recti onal Coupl ers, I EEE Transaction -
MTT-18, June, 1970, pp. 318-322.
1942, pp. 412-424.
7-10 CPWEF (Coplanar Waveguide, Open-End Effect)
CPWEF (Coplanar Waveguide, Open-End Effect)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W > 0
G > 0
W + 2 G 20 H
0.125 W G 4.5 W
where
H = substrate thi ckness (from associ ated CPWSUB)
CPWEF (Coplanar Waveguide, Open-End Effect) 7-11
Notes/Equations
for conductors of fi ni te thi ckness, conductor l osses and di el ectri c l osses. The
thi ckness correcti on i s based on a techni que proposed by Cohn.
The conductor l osses are cal cul ated usi ng Wheel er's i ncremental i nductance
rul e. The attenuati on formul a provi des a smooth transi ti on from dc resi stance
to resi stance due to ski n effect at hi gh frequenci es. Di spersi on at hi gh
frequenci es i s not i ncl uded i n the model .
2. The end effect of the abruptl y termi nated l i ne i s model ed as a l umped
capaci tance to ground. The val ue of the capaci tance i s cal cul ated from formul a
devel oped by Wi l l i am Getsi nger for Agi l ent. The formul a i s based on an
anal ysi s of an anal ogous twi n-stri p confi gurati on of the copl anar di sconti nui ty
as proposed by Getsi nger.
thermal noi se).
References
November 1960, pp. 638-644.
[2] G. Ghi one and C. Nal di , Anal yti cal Formul as for Copl anar Li ne i n Hybri d and
179-181.
[3] W. J. Getsi nger, Ci rcui t Dual s on Pl anar Transmi ssi on Medi a, I EEE MTT-S
1942, pp. 412-424.
7-12 CPWEGAP (Coplanar Waveguide, End Gap)
CPWEGAP (Coplanar Waveguide, End Gap)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W > 0, G > 0
W S 1.4 W
0.125 W G 4.5 W
W + 2 G 20 H
where
W Center Conductor width mil 25.0
CPWEGAP (Coplanar Waveguide, End Gap) 7-13
Notes/Equations
thi ckness correcti on i s based on a techni que proposed by Cohn. The conductor
l osses are cal cul ated usi ng Wheel er's i ncremental i nductance rul e. The
capaci tance to ground. The val ue of the capaci tance i s cal cul ated from formul a
thermal noi se).
References
November 1960, pp. 638-644.
[3] G. Ghi one, and C. Nal di , Anal yti cal Formul as for Copl anar Li ne i n Hybri d and
179-181.
1942, pp. 412-424.
7-14 CPWG (Coplanar Waveguide with Lower Ground Plane)
CPWG (Coplanar Waveguide with Lower Ground Plane)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
0.125 W G 4.5 W
W + 2 G 10 H
W > 0
G > 0
where
CPWG (Coplanar Waveguide with Lower Ground Plane) 7-15
Notes/Equations
thi ckness correcti on i s based on a techni que proposed by Cohn. The conductor
l osses are cal cul ated usi ng Wheel er's i ncremental i nductance rul e. The
thermal noi se).
References
[1] G. Ghi one and C. Nal di . Parameters of Copl anar Wavegui des wi th Lower
Common Pl anes, Electronics Letters, Vol . 19, No. 18, September 1, 1983,
pp. 734-735.
1942, pp. 412-424.
7-16 CPWOC (Coplanar Waveguide, Open-Circuited Stub)
CPWOC (Coplanar Waveguide, Open-Circuited Stub)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W > 0
G > 0
0.125 W G 4.5 W
W + 2 G 20 H
where
CPWOC (Coplanar Waveguide, Open-Circuited Stub) 7-17
Notes/Equations
frequenci es i s not i ncl uded i n the model . No end effects are i ncl uded i n the
model .
thermal noi se).
References
November 1960, pp. 638-644.
[2] G. Ghi one and C. Nal di , Anal yti cal Formul as for Copl anar Li ne i n Hybri d and
179-181.
1942, pp. 412-424.
7-18 CPWSC (Coplanar Waveguide, Short-Circuited Stub)
CPWSC (Coplanar Waveguide, Short-Circuited Stub)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W > 0
G > 0
0.125 W G 4.5 W
W + 2 G 20 H
where
CPWSC (Coplanar Waveguide, Short-Circuited Stub) 7-19
Notes/Equations
frequenci es i s not i ncl uded i n the model .
i nductance to ground. The val ue of the i nductance i s cal cul ated from formul a
thermal noi se).
References
November 1960, pp. 638-644.
[3] G. Ghi one, and C. Nal di , Anal yti cal Formul as for Copl anar Li ne i n Hybri d and
179-181.
1942, pp. 412-424.
7-20 CPWSUB (Coplanar Waveguide Substrate)
CPWSUB (Coplanar Waveguide Substrate)
Symbol
Available in ADS
Parameters
Range of Usage
H > 0
Er 1.0
T 0
Notes/Equations
1. CPWSUB i s requi red for al l copl anar wavegui de components.
2. The substrate defi ned by thi s component does not have a l ower ground pl ane.
3. Losses are accounted for when Rough > 0 and T > 0. The Rough parameter
modi fi es the l oss cal cul ati ons.
4. Cond1 control s the l ayer on whi ch the Mask l ayer i s drawn; i t i s a Layout-onl y
parameter and i s not used by the si mul ator.
Mur Relative permeability value None 1
Cond Conductor conductivity None 1.0e+50
Rough Conductor surface roughness mil 0
RWG (Rectangular Waveguide) 7-21
RWG (Rectangular Waveguide)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
A > B
TE10 and evanescent (bel ow cutoff) modes are supported.
A Inside width of enclosure mil 900.0
B Inside height of enclosure mil 400.0
L Waveguide length mil 10000.0
TanM Permeability None 0
Er
7-22 RWG (Rectangular Waveguide)
Notes/Equations
1. The power-vol tage defi ni ti on of wavegui de i mpedance i s used i n the
frequency-domai n anal yti cal model .
2. Conductor l osses can be speci fi ed usi ng Rho or TanM or both. Di el ectri c l oss can
be speci fi ed usi ng TanD or Si gma or both.
4. I f the val ues of A and B are such that B > A, then B i s assumed to be the wi dth,
and A i s assumed to be the hei ght.
thermal noi se).
References
[1] R. Ramo and J. R. Whi nnery, Fields and Waves in Modern Radio, 2nd Ed., John
Wi l ey and Sons, New York, 1960.
RWGINDF (Rectangular Waveguide Inductive Fin) 7-23
RWGINDF (Rectangular Waveguide Inductive Fin)
Symbol
Illustration
Available in ADS
Parameters
L Length of the fin mil 10000.0
7-24 RWGINDF (Rectangular Waveguide Inductive Fin)
Range of Usage
0.02 L/A 1.1
B < A/2
TE10 mode onl y
Si mul ati on frequency > FC
where
FC = cutoff frequency of wavegui de
Notes/Equations
1. Stri p i s centered between si dewal l s of wavegui de. Stri p contacts top and bottom
of wavegui de.
thermal noi se).
RWGT (Rectangular Waveguide Termination) 7-25
RWGT (Rectangular Waveguide Termination)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
A > B
TE10 and evanescent (bel ow cutoff) modes are supported.
Notes/Equations
1. The power-vol tage defi ni ti on of wavegui de i mpedance i s used i n the
frequency-domai n anal yti cal model .
2. Conductor l osses can be speci fi ed usi ng Rho or TanM or both. Di el ectri c l oss can
be speci fi ed usi ng TanD or Si gma or both.
INFINITELY LONG
7-26 RWGT (Rectangular Waveguide Termination)
4. I f the val ues of A and B are such that B > A, then B i s assumed to be the wi dth,
and A i s assumed to be the hei ght.
thermal noi se).
References
[1] R. Ramo and J. R. Whi nnery. Fields and Waves in Modern Radio, 2nd Ed., John
Wi l ey and Sons, New York, 1960.
8-1
Chapter 8: Transmission Line Components
8-2 CLIN (Ideal Coupled Transmission Lines)
Transmission Line Components
CLIN (Ideal Coupled Transmission Lines)
Symbol
Available in ADS
Parameters
Range of Usage
Notes/Equations
1. Odd- and even-mode phase vel oci ti es are assumed equal .
Ze Even-mode characteristic impedance Ohm 100.0
Zo Odd-mode characteristic impedance Ohm 25.0
E Electrical length deg 90
F Reference frequency for electrical length GHz 1
Ze > 0 Ze > Zo Zo > 0
E 0
F > 0
CLINP (Lossy Coupled Transmission Lines) 8-3
CLINP (Lossy Coupled Transmission Lines)
Symbol
Available in ADS
Parameters
Range of Usage
Notes/Equations
1. The di storti on parameter has 2 val ues: 0 and 1.
For Di storti on = 0, the F, TanD, Mur, TanM and Si gma parameters are i gnored
and the characteri sti c i mpedance of the modes are taken as i s (i .e., as real
val ues Ze and Zo).
Ze Even-mode characteristic impedance Ohm 100.0
Zo Odd-mode characteristic impedance Ohm 25.0
L Physical length mil 500.0
Ke Even-mode effective dielectric constant None 2.05
Ko Odd-mode effective dielectric constant None 2.15
Ae Even-mode attenuation dB/meter 0.0001
Ao Odd-mode attenuation dB/meter 0.0001
Distortion Model without (0) or with (1) distortion None 0
F Frequency for Scaling Attenuation Hz 0
Ze > 0 Ze > Zo Zo > 0
Ke > 0 Ko > 0
Ae 0 Ao 0
F >= 0
8-4 CLINP (Lossy Coupled Transmission Lines)
For Di storti on = 1, CLI NP wi l l behave l i ke TLI NP, except that TLI NP onl y has
one mode and CLI NP has two modes. Each CLI NP mode wi l l behave accordi ng
to an r, l , g, c model that i ncl udes al l l oss mechani sms. The F, TanD, Mur, TanM
and Si gma parameters are al l used when Di storti on = 1.
2. The A parameter speci fi es conductor l oss onl y. To speci fy di el ectri c l oss, speci fy
non-zero val ue for TanD (to speci fy a frequency-dependent di el ectri c l oss) or
Si gma (to speci fy a constant di el ectri c l oss).
Because conductor and di el ectri c l osses can be speci fi ed separatel y, the
component i s not assumed to be di storti onl ess. Therefore, the actual
characteri sti c i mpedance of the l i ne may be compl ex and frequency-dependent.
Thi s may cause refl ecti ons i n your ci rcui t that woul d not occur i f a
di storti onl ess approxi mati on were made.
A(f) = A (for F = 0)
A(f) = A(F) (for F 0)
where
3. TanD and Si gma are i ncl uded i n the shunt admi ttance to ground (g) i n the rl gc
network (seri es l , seri es r, shunt g, shunt c) whi ch i s i nternal l y i n the model . I n
the model , the admi ttance g i s proporti onal to the fol l owi ng sum:
g ~ Si gma/eps0/K + 2 freq TanD
Thi s means that both Si gma (conducti ve l oss i n the substrate) and TanD (l oss
tangent l oss i n the substrate) can be defi ned wi th the correct frequency
dependence (note that the frequency dependency of the Si gma term i s di fferent
from the frequency dependency of the TanD term i n the above sum). However,
i n practi ce, the l oss i n a gi ven substrate i s best descri bed usi ng ei ther Si gma or
TanD. For exampl e, for a Si l i con substrate one can defi ne Si gma and set TanD
to 0; for a board materi al , one can defi ne TanD and set Si gma to 0.
thermal noi se).
f
F
----
CLINP (Lossy Coupled Transmission Lines) 8-5
8-6 COAX (Coaxial Cable)
COAX (Coaxial Cable)
Symbol
Illustration
Available in ADS
Parameters
Di diameter of inner conductor mil
Do inner diameter of outer conductor mil
L length mil
Er dielectric constant of dielectric between inner and outer conductors
TanD dielectric loss tangent
Rho conductor resistivity (relative to copper)
Er
3
2
Do
Di
TanD
Rho
COAX (Coaxial Cable) 8-7
Range of Usage
Di mensi ons must support onl y TEM mode.
TanD 0
Rho 0
Er 1
Do > Di
Si mul ati on frequency <
Notes/Equations
1. Starti ng wi th ADS2005A, the COAX component i s not avai l abl e i n the l i brary
or pal ette, but can be accessed from the Component Hi story fi el d. I t i s
recommended to use COAX_MDS i nstead of COAX. The COAX component may
cause an unexpected change i n the transi ent response for some desi gns.
thermal noi se).
4. Pi ns 2 and 4 need to be appropri atel y grounded for correct usage of thi s
component.
References
[1] Si mon Ramo, John R. Whi nnery, and Theodore Van Duzer. Fields and Waves in
Communication Electronics, John Wi l ey and Sons, 1984, Tabl e 5.11b,
p. 252.
190 GHz
Er Di mm ( ) Do mm ( ) + [ ]
----------------------------------------------------------------------------
8-8 COAX_MDS (Coaxial Cable)
COAX_MDS (Coaxial Cable)
Symbols
Illustration
Available in ADS
Parameters
A Radius of inner conductor mil 59.8
Ri Inner radius of outer conductor mil 137.8
Ro Outer radius of outer conductor mil 270.5
L Length mil 12.0
T Plating thickness mil 0.0
Cond1 Plating metal conductivity S/m 1.0e+50
Cond2 Base metal conductivity S/m 1.0e+50
Mur Relative permeability of dielectric None 1.0
Er Dielectric constant of dielectric between inner and outer conductors None 1.0006
TanD Dielectric loss tangent None 0.0
COAX_MDS (Coaxial Cable) 8-9
Range of Usage
A > T, < RI
Ri > A, < (Ro -T)
Ro > (Ri +T)
Cond1 > 0
Cond2 > 0
Note/Equations
1. Conductor radi us A and i nner radi us RI are both after pl ati ng. I f pl ati ng
thi ckness T i s changed, these val ues must be changed al so.
2. Pl ati ng thi ckness T A and (RO - RI ).
8-10 CoaxTee (Coaxial 3-Port T-Junction, Ideal, Lossless)
CoaxTee (Coaxial 3-Port T-Junction, Ideal, Lossless)
Symbol
Available in ADS
Parameters
Range of Usage
Z > 0
L 0
K 1.0
Z Characteristic impedance of coaxial line Ohm 50
L Length of all branches of the t-junction mil 10
DR (Cylindrical Dielectric Resonator Coupled Transmission Line Section) 8-11
DR (Cylindrical Dielectric Resonator Coupled Transmission Line
Section)
Symbol
Available in ADS
Parameters
Range of Usage
H, HL, HU, Rad, Qdr, Cond > 0
Er > ErL > ErU 1.0
Notes/Equations
1. The unl oaded resonant frequency are cal cul ated usi ng vari ati onal techni que.
The unl oaded qual i ty factor i s determi ned usi ng:
1/ Qu = 1/Qdr + 1/Qcond
where the Qcond i s the qual i ty factor due to the fi ni te conducti vi ty of the upper
and l ower conductor pl ates.
Z Characteristic impedance of coupled transmission line Ohm 50.0
K Coupling coefficient (Qu/Qe) None 1.5
Er Dielectric constant of the cylindrical dielectric resonator None 90.0
Mode Mode of operation (where: Mode=x means TE 01x mode; the dominant mode is Mode=0, in
other words TE010)
None 0
Qdr Q-factor of the dielectric resonator None 1000.0
Rad Radius of the dielectric resonator um 500.0
H Thickness of the dielectric resonator um 500.0
ErL Dielectric constant of the substrate suspending the dielectric resonator None 2.2
HL Thickness of the substrate suspending the dielectric resonator um 1000.0
ErU Dielectric constant of the superstrate None 1.0
HU Thickness of the superstrate um 1000.0
Cond Conductivity of the top and bottom metal plates None 4.2e+7
8-12 DR (Cylindrical Dielectric Resonator Coupled Transmission Line Section)
2. The coupl i ng coeffi ci ent i s not model ed i n thi s rel ease, due to the proxi mi ty
effect between the di el ectri c resonator and the transmi ssi on l i ne.
References
[1] T. I toh and R. S Rudokas, New method for computi ng the resonant frequenci es
of di el ectr i c r esonators, I EEE Trans., MTT-25, pp.52-54, Jan. 1977.
[2] R.K. Mongi a, Resonant Frequency of Cyl i ndri cal Di el ectri c Resonator Pl aced
i n an MI C Envi ronment, I EEE Trans., MTT-38, pp. 802-804, June 1990.
ETAPER_MDS (Ideal Exponential Tapered Line) 8-13
ETAPER_MDS (Ideal Exponential Tapered Line)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Z1 > 0
Z2 > 0
L 0
V > 0
Z1 Z at n1 Ohm 25.0
Z2 Z at n2 Ohm 50.0
L Length mil 100.0
V Relative velocity None 1.0
8-14 ETAPER_MDS (Ideal Exponential Tapered Line)
Notes/Equations
1. Thi s i s an i deal exponenti al tapered transmi ssi on l i ne model , i n whi ch
i mpedance i s a functi on of di stance: Z
(X)
= Z
1
exp[(X/L) l n(Z
2
/Z
1
)]
I n thi s equati on: 0 X L
X i s the di stance from n1, Z
(0)
= Z
1
, Z
(L)
= Z
2
.
RCLIN (Distributed R-C Network) 8-15
RCLIN (Distributed R-C Network)
Symbol
Available in ADS
Parameters
Notes/Equations
1. Total seri es resi stance = R L; total shunt capaci tance = C L
thermal noi se).
Equivalent Circuit
For transi ent anal ysi s, a si mpl i fi ed l umped model i s used, as shown bel ow.
R Series resistance/meter Ohm 50.0
C Shunt capacitance/meter pF 0.01
L Length mil 1000.0
8-16 TLIN (Ideal 2-Terminal Transmission Line)
TLIN (Ideal 2-Terminal Transmission Line)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Z 0
F 0
Notes/Equations
Z Characteristic impedance Ohm 50.0
TLIN4 (Ideal 4-Terminal Transmission Line) 8-17
TLIN4 (Ideal 4-Terminal Transmission Line)
Symbol
Available in ADS
Parameters
Range of Usage
Z 0
F 0
Notes/Equations
1. Pi ns 2 and 4 need to be appropri atel y grounded for correct usage of thi s
component.
8-18 TLINP (2-Terminal Physical Transmission Line)
TLINP (2-Terminal Physical Transmission Line)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Z > 0 K 1 A 0 F 0
Notes/Equations
Because conductor and di el ectri c l osses can be speci fi ed separatel y, the
A Attenuation dB/meter 0.0001
F Frequency for scaling attenuation GHz 1
TLINP (2-Terminal Physical Transmission Line) 8-19
A(f) = A (for F = 0)
A(f) = A(F) (for F 0)
where
2. TanD and Si gma are i ncl uded i n the shunt admi ttance to ground (g) i n the rl gc
network (seri es l , seri es r, shunt g, shunt c) whi ch i s i nternal l y i n the model . I n
the model , the admi ttance g i s proporti onal to the fol l owi ng sum:
g ~ Si gma/eps0/K + 2 freq TanD
Thi s means that both Si gma (conducti ve l oss i n the substrate) and TanD (l oss
tangent l oss i n the substrate) can be defi ned wi th the correct frequency
dependence (note that the frequency dependency of the Si gma term i s di fferent
from the frequency dependency of the TanD term i n the above sum). However,
i n practi ce, the l oss i n a gi ven substrate i s best descri bed usi ng ei ther Si gma or
TanD. For exampl e, for a Si l i con substrate one can defi ne Si gma and set TanD
to 0; for a board materi al , one can defi ne TanD and set Si gma to 0.
thermal noi se).
f
F
----
8-20 TLINP4 (4-Terminal Physical Transmission Line)
TLINP4 (4-Terminal Physical Transmission Line)
Symbol
Available in ADS
Parameters
Range of Usage
Z > 0
K 1
A 0
F 0
Notes/Equations
2. Si nce conductor and di el ectri c l osses can be speci fi ed separatel y, the component
i s not assumed to be di storti onl ess. Therefore, the actual characteri sti c
i mpedance of the l i ne may be compl ex and frequency-dependent. Thi s may
cause refl ecti ons i n your ci rcui t that woul d not occur i f a di storti onl ess
approxi mati on were made.
TLINP4 (4-Terminal Physical Transmission Line) 8-21
3. A(f) = A (for F = 0)
A(f) = A(F) (for F 0)
where
thermal noi se).
7. Thi s component i s the same as the TLI NP component, however, the grounds i n
TLI NP4 are expl i ci t, whi l e they are i mpl i ci t i n TLI NP. Pi ns 2 and 4 need to be
appropri atel y grounded for correct usage of thi s component.
f
F
----
8-22 TLOC (Ideal Transmission Line Open-Circuited Stub)
TLOC (Ideal Transmission Line Open-Circuited Stub)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Z > 0
F 0
Notes/Equations
2. Port 2 shoul d be connected to the system ground reference.
TLPOC (Physical Transmission Line Open-Circuited Stub) 8-23
TLPOC (Physical Transmission Line Open-Circuited Stub)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Z > 0
K 1
A 0
F 0
8-24 TLPOC (Physical Transmission Line Open-Circuited Stub)
Notes/Equations
2. Si nce conductor and di el ectri c l osses can be speci fi ed separatel y, the component
i s not assumed to be di storti onl ess. Therefore, the actual characteri sti c
i mpedance of the l i ne may be compl ex and frequency-dependent. Thi s may
cause refl ecti ons i n your ci rcui t that woul d not occur i f a di storti onl ess
approxi mati on were made.
3. A(f) = A (for F = 0)
A(f) = A(F) (for F 0)
where
thermal noi se).
f
F
----
TLPSC (Physical Transmission Line Short-Circuited Stub) 8-25
TLPSC (Physical Transmission Line Short-Circuited Stub)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Z > 0
K 1
A 0
F 0
8-26 TLPSC (Physical Transmission Line Short-Circuited Stub)
Notes/Equations
2. Because conductor and di el ectri c l osses can be speci fi ed separatel y, the
3. A(f) = A (for F = 0)
A(f) = A(F) (for F 0)
where
thermal noi se).
f
F
----
TLSC (Ideal Transmission Line Short-Circuited Stub) 8-27
TLSC (Ideal Transmission Line Short-Circuited Stub)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Z 0
F 0
Notes/Equations
2. Port 2 shoul d be connected to the system ground reference.
8-28 TLSC (Ideal Transmission Line Short-Circuited Stub)
PCB Model Basis and Limits 9-1
Chapter 9: Printed Circuit Board
Components
PCB Model Basis and Limits
The pri nted ci rcui t board l i ne components avai l abl e i n thi s l i brary are based on a
quasi -stati c anal ysi s i n an encl osed regi on wi th strati fi ed l ayers of a si ngl e di el ectri c.
The di el ectri c l ayers and the metal encl osure are speci fi ed by PCSUBn (n=1, ... , 7)
whereas the coupl ed l i nes are speci fi ed by PCLI Nn (n=1, ... , 10). There can be any
combi nati on of 1 to 10 conducti ng stri ps and 1 to 7 di el ectri c l ayers. I n other words,
for a gi ven PCLI Nn, i ts conductors can be associ ated wi th any metal l ayers of a gi ven
PCSUBn.
Al l of the di el ectri c l ayers of a PCSUBn have the same di el ectri c constant. However,
each di el ectri c l ayer can have a di fferent thi ckness. There can be an ai r l ayer above
the top-most di el ectri c or bel ow the bottom-most di el ectri c. When an ai r l ayer exi sts,
there may be a conductor pattern at the ai r-di el ectri c i nterface. The structure can be
open or covered by a conducti ng shi el d at the top and at the bottom. The si dewal l s are
requi red.
Method of Analysis
The model i s that of N coupl ed TEM transmi ssi on l i nes. Lapl aces equati on i s sol ved
i n the pl ane transverse to the di recti on of propagati on subject to appropri ate
boundary condi ti ons at the conducti ng surfaces. Then the sol uti on of Lapl aces
equati on i s used to formul ate the i ndefi ni te admi ttance matri x for N-coupl ed TEM
tr ansmi ssi on l i nes. The sol uti on of Lapl aces equati on i s by means of fi ni te
di fferences.
The quasi -stati c sol uti on makes these sui tabl e for use at RF frequenci es and for
hi gh-speed di gi tal appl i cati ons.
Because the anal ysi s i s quasi -stati c, the ti me requi red for anal ysi s i s i mproved. I n
contrast to a ful l -wave anal ysi s, whi ch i s expected to be sl ow, a quasi -stati c anal ysi s i s
expected to be rel ati vel y fast. Essenti al l y al l of the anal ysi s ti me i s requi red for the
sol uti on of the Lapl ace's equati on.
The mesh si ze used i n the fi ni te di fference sol uti on of Lapl ace's equati on i s the si ngl e
most i mportant determi nant of anal ysi s ti me for a gi ven structure. Use di screti on
9-2 PCB Model Basis and Limits
Printed Circuit Board Components
when speci fyi ng the wi dth of the encl osure (parameter W of PCSUBn) and the
hei ghts of the upper and l ower conducti ng shi el ds (Hu and Hl parameters of
PCSUBn). Speci fyi ng l arge val ues for these parameters requi res a l arge number of
cel l s for the mesh resul ti ng i n l onger si mul ati on ti mes. I f si dewal l s are not actual l y
present then a rough gui de i s to use a spaci ng of 10 conductor wi dths to the si dewal l s
i nstead of speci fyi ng a l arge number for the wi dth of encl osure.
Assumptions and Limitations
The conductor thi ckness i s used sol el y for l oss cal cul ati ons. I n the sol uti on of
Lapl ace's equati on the conductors are assumed to have zero thi ckness. Conductor
l osses are effecti vel y i gnored i f the thi ckness i s set to zero or i f Rho i s set to 0.
Conductor l osses i ncl ude both dc and ski n effect cal cul ati ons.
The di el ectri c l oss i s accounted for by non-zero di el ectri c conducti vi ty, Si gma.
Provi si on for a frequency-dependent l oss tangent component has been made by
speci fi cati on of the TanD parameter, but i s not used i n the present i mpl ementati on.
I n pri nci pl e, the aspect rati o (conductor wi dth to di el ectri c thi ckness or hori zontal
spaci ng between conductors) i s unrestri cted. I n real i ty, the probl em si ze (and,
therefore, cal cul ati on ti me) i ncreases greatl y for aspect rati os l ess than 0.1 or greater
than 10. I t i s hi ghl y recommended to keep the aspect rati o wi thi n thi s range.
References
Vi jai K. Tri pathi and Ri chard J. Bucol o, A Si mpl e Network Anal og Approach for the
Quasi -Stati c Characteri sti cs of General Lossy, Ani sotropi c, Layered Structures,
I EEE Transactions on Microwave Theory and Techniques, Vol . MTT-33, No. 12, pp.
1458-1464; December 1985.
PCBEND (PCB Bend (Arbitrary Angle/Miter)) 9-3
PCBEND (PCB Bend (Arbitrary Angle/Miter))
Symbol
Illustration
Available in ADS
Parameters
Subst Substrate instance name None PCSub1
CLayer Conductor layer number Integer 1
M Miter fraction None 0.6
Refine_grid_factor Factor to refine the background grid Integer 1
9-4 PCBEND (PCB Bend (Arbitrary Angle/Miter))
Range of Usage
W > 0
1 CLayer Nl ayers+1
90 Angl e 90, degrees
where
Nl ayers = number of l ayers speci fi ed by PCSUBi (i =1,2, ... , 7)
Notes/Equations
1. Thi s component i s model ed as an i deal short-ci rcui t between pi ns 1 and 2. I t i s
provi ded mai nl y to faci l i tate i nterconnecti ons between PCB l i nes ori ented at
di fferent angl es i n l ayout.
2. The val ue of CLayer and the val ue of the associ ated PCSUB parameters Hu and
Hl must be compati bl e so as to not short out the CLayer to the upper or l ower
ground pl ane. For exampl e, i t i s i nval i d for CLayer=1 i f Hu=0 or for CLayer=i +1
(for PCSUBi , i =1,2, ... , 7) i f Hl =0.
3. Conductor l ayers are numbered as fol l ows: the upper surface of the top
di el ectri c l ayer (or di el ectri c l ayer #1) i s conductor l ayer #1; the l ower surface of
the di el ectri c l ayer #1 (whi ch coul d al so be the upper surface of the di el ectri c
l ayer #2) i s conductor l ayer #2; etc. When usi ng a PCSUBi substrate, the l ower
surface of di el ectri c l ayer #i i s conductor l ayer #(i +1).
4. I n l ayout, a posi ti ve val ue for Angl e draws a countercl ockwi se bend from pi n 1
to 2; a negati ve val ue for Angl e draws a cl ockwi se bend.
5. Layout artwork requi res pl aci ng a PCSUBi (i =1, 2, ... , 7) pri or to pl aci ng the
thermal noi se).
PCCORN (Printed Circuit Corner) 9-5
PCCORN (Printed Circuit Corner)
Symbol
Available in ADS
Parameters
Range of Usage
W > 0
1 CLayer Nl ayers+1
where
Nl ayers = number of l ayers speci fi ed by PCSUBi (i =1, 2, ... , 7)
Notes/Equations
1. Thi s component i s treated as an i deal connecti on between pi ns 1 and 2, and i s
provi ded mai nl y to faci l i tate i nterconnecti ons between PCB l i nes i n l ayout.
(for PCSUBi , i =1, 2, ... , 7) i f Hl =0.
9-6 PCCORN (Printed Circuit Corner)
thermal noi se).
PCCROS (Printed Circuit Cross-Junction) 9-7
PCCROS (Printed Circuit Cross-Junction)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W1 > 0, W2 > 0, W3 > 0, W4 > 0
1 CLayer Nl ayers+1
where
W1 Width at pin 1 mil 10.0
9-8 PCCROS (Printed Circuit Cross-Junction)
Notes/Equations
1. Thi s component i s treated as an i deal connecti on between pi ns 1, 2, 3, and 4,
and has been provi ded mai nl y to faci l i tate i nterconnecti ons among PCB l i nes i n
l ayout.
(for PCSUBi , i =1,2, ... , 7) i f Hl =0.
thermal noi se).
PCCURVE (PCB Curve) 9-9
PCCURVE (PCB Curve)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W > 0
1 CLayer Nl ayers+1
180 Angl e 180, degrees
Radi us W/2
where
Radius Radius (measured to center of conductor) mil 100.0
9-10 PCCURVE (PCB Curve)
Notes/Equations
1. Thi s component i s model ed as PCLI N1, assumi ng a si ngl e strai ght l i ne of
l ength Radi usAngl e, where Angl e i s i n radi ans. The si ngl e l i ne i s assumed to
be l ocated hal fway between and paral l el to the si dewal l s. The di stance between
the si dewal l s i s gi ven as part of the PCSUBi speci fi cati on.
2. The di stance between the si dewal l s i s typi cal l y the wi dth of the metal encl osure
around the PC board. I f the metal encl osure i s absent, wi dth of the PC board
i tsel f can be speci fi ed and treated as the di stance between the si dewal l s. Note,
however, that the si mul ati on ti me i ncreases rapi dl y as the si dewal l di stance
i ncreases. I f the effect of the si dewal l s i s not i mportant, i t i s hi ghl y
recommended to set i t to approxi matel y 10 ti mes the l i ne wi dth for thi s
component.
(for PCSUBi , i =1,2, ... , 7) i f Hl =0.
6. Thi s component has been provi ded mai nl y to faci l i tate i nterconnecti ons
between PCB l i nes ori ented at di fferent angl es i n l ayout.
thermal noi se).
PCILC (Printed Circuit Inter-layer Connection) 9-11
PCILC (Printed Circuit Inter-layer Connection)
Symbol
Available in ADS
Parameters
Range of Usage
1 CLayer1, CLayer2 Nl ayers+1
where
Nl ayers = number of l ayers speci fi ed by PCSUBi (i = 1,2, ... , 7)
Notes/Equations
1. Thi s component i s model ed as an i deal connecti on between pi n 1 and pi n 2 and
has been provi ded mai nl y to faci l i tate i nterconnecti ons between PCB
components pl aced on di fferent conductor l ayers i n l ayout.
(for PCSUBi , i =1,2, ... , 7) i f Hl =0.
CLayer1 Conductor layer number at pin 1 Integer 1
CLayer2 Conductor layer number at pin 2 Integer 2
Ang (for Layout option) Angle of orientation at pin 2 deg 90
W1 (for Layout option) Width of square pad or diameter of circular pad on CLayer1 mil 10.0
W2 (for Layout option) Width of square pad or diameter of circular pad on CLayer2 mil 10.0
Type (for Layout option) Type of via pad, square or circular None square
9-12 PCILC (Printed Circuit Inter-layer Connection)
4. Type speci fi es the type of the vi a pad. Type=square draws a square pad on
CLayer1 and CLayer2; Type=ci rcul ar draws a ci rcul ar pad on CLayer1 and
CLayer2.
thermal noi se).
PCLIN1 (1 Printed Circuit Line) 9-13
PCLIN1 (1 Printed Circuit Line)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W > 0
S1 > 0
1 CLayer1 Nl ayers+1
where
Notes/Equations
1. The 2-l ayer i l l ustrati on shown i s onl y an exampl e. PCSUBi has between 1 and 7
di el ectri c l ayers, and any conductor can be pl aced above or bel ow any di el ectri c
l ayer. Conductors can overl ap i f desi red.
W Width of line mil 10.0
S1 Distance from line to left wall mil 100.0
CLayer1 Conductor layer number Integer 1
L Length of line mil 25.0
S1
W
CLayer1 = 2
Pin 1
(Pin 2 far side)
9-14 PCLIN1 (1 Printed Circuit Line)
2. The frequency-domai n anal yti cal model for thi s component i s a non-di spersi ve
stati c model devel oped by Agi l ent. Refer to PCB Model Basi s and Li mi ts on
page 9-1.
(for PCSUBi , i =1,2, ... , 7) i f Hl =0.
thermal noi se).
PCLIN2 (2 Printed Circuit Coupled Lines) 9-15
PCLIN2 (2 Printed Circuit Coupled Lines)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W1 > 0, W2 > 0
S1 > 0, S2 > 0
W1 Width of line #1 mil 10.0
S1 Distance from line #1 to left wall mil 100.0
CLayer1 Conductor layer number - line #1 Integer 1
L Length of the lines mil 25.0
W1
CLayer2 = 2
Pin 1
(Pin 4 far side)
S1
S2
Pin 2
(Pin 3 far side)
CLayer1 = 3
W2
9-16 PCLIN2 (2 Printed Circuit Coupled Lines)
where
Notes/Equations
page 9-1.
(for PCSUBi , i =1,2, ... , 7) i f Hl =0.
thermal noi se).
Symbol
Illustration
Available in ADS
Parameters
CLayer3 = 2
Pin 1 (Pin 6 far side)
S1
S2
CLayer1, CLayer2 = 3
W1
W2
S3
W3
Range of Usage
W1 > 0, W2 > 0, W3 > 0
S1 > 0, S2 > 0, S3 > 0
where
Notes/Equations
page 9-1.
(for PCSUBi , i =1,2, ... , 7) i f Hl =0.
thermal noi se).
Symbol
Illustration
Available in ADS
Parameters
CLayer3 = 2
S1
S2
CLayer1, CLayer2=3
W1
W2
S3
W3
W4
S4
CLayer4 = 1
Range of Usage
W1 > 0, W2 > 0, W3 > 0, W4 > 0
S1 > 0, S2 > 0, S3 > 0, S4 > 0
where
Notes/Equations
1. The 2-l ayer i l l ustrati on shown i s onl y an exampl e. The PCSUBi has between 1
and 7 di el ectri c l ayers, and any conductor can be pl aced above or bel ow any
di el ectri c l ayer. Conductors can overl ap i f desi red.
page 9-1.
(for PCSUBi , i =1,2, ... , 7) i f Hl =0.
thermal noi se).
Symbol
Illustration
Available in ADS
Parameters
S1
S2
W1
W2
S3
W3
W4
S4
S5
W5
CLayer3 = 2
Range of Usage
W1 > 0, W2 > 0, W3 > 0, W4 > 0, W5 > 0
S1 > 0, S2 > 0 S3 > 0, S4 > 0, S5 > 0
where
Notes/Equations
page 9-1.
(for PCSUBi , i =1,2, ... , 7) i f Hl =0.
thermal noi se).
Symbol
Illustration
Available in ADS
Parameters
S1
S2
W1
W2
S3
W3
W5
S4
S6
W6
W4
S5
Range of Usage
W1 > 0, W2 > 0, W3 > 0, W4 > 0, W5 > 0, W6 >0
S1 > 0, S2 > 0, S3 > 0, S4 > 0, S5 > 0, S6 > 0
where
Notes/Equations
L length of the lines mil 25.0
page 9-1.
(for PCSUBi , i =1,2, ... , 7) i f Hl =0.
thermal noi se).
Symbol
Illustration
Available in ADS
Parameters
S1
S2
W1
W2
S3
W3
W5
S4
S6
W6
W4
W7
S5
S7
CLayer1, CLayer2,
CLayer7 = 3
CLayer5, CLayer6 =1
Pin 4 (Pin 11 far side) Pin 5 (Pin 10 far side)
Range of Usage
W1 > 0, W2 > 0, W3 > 0, W4 > 0, W5 > 0, W6 >0, W7 >0
S1 > 0, S2 > 0, S3 > 0, S4 > 0, S5 > 0, S6 > 0, S7 > 0
Temp Physical temperature
C
None
where
Notes/Equations
page 9-1.
(for PCSUBi , i =1,2, ... , 7) i f Hl =0.
thermal noi se).
Symbol
Illustration
Available in ADS
Parameters
S1
S2
W1
W2
S3
W3
W5
S4
S6
W6
W4
W7
S5
S7
W8
S8
CLayer3, CLayer4,
CLayer7 = 2
CLayer1, CLayer2,
CLayer8 = 3
Range of Usage
Wi > 0 for i = 1, ... , 8
Si > 0 for i = 1, ... , 8
W8 Width of line #8 10.0
where
Notes/Equations
page 9-1.
(for PCSUBi , i =1, 2, ... , 7) i f Hl =0.
thermal noi se).
Symbol
Illustration
S1
S2
W2
S3
W5
S4
S6
W6
W7
S5
S7
CLayer4, CLayer5,
CLayer6 = 2
CLayer1, CLayer2,
CLayer3 = 3
CLayer7, CLayer8,
CLayer9 = 1
W8
S8
W1
W3
W4
W9
S9
Available in ADS
Parameters
Range of Usage
Wi > 0 for i = 1, ... , 9
Si > 0 for i = 1, ... , 9
where
Notes/Equations
page 9-1.
(for PCSUBi , i =1, 2, ... , 7) i f Hl =0.
thermal noi se).
Symbol
Illustration
W10
S1
S2
W2
S3
W5
S4
S6
W6
W7
S5
S7
CLayer10=1
W8
S8
W1
W3
W4
W9
S9
S10
CLayer7, CLayer8,
CLayer9=1
CLayer4, CLayer5,
CLayer6=2
CLayer1, CLayer2,
CLayer3=3
Available in ADS
Parameters
Range of Usage
Wi > 0 for i = 1, ... , 10
Si > 0 for i = 1, ... , 10
where
Notes/Equations
page 9-1.
(for PCSUBi , i =1, 2, ... , 7) i f Hl =0.
thermal noi se).
9-42 PCSTEP (PCB Symmetric Steps)
PCSTEP (PCB Symmetric Steps)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W1, W2 > 0
1 CLayer Nl ayers+1
1 CLayer Nl ayers+1
where
Notes/Equations
1. Thi s component i s model ed as an i deal short ci rcui t between pi ns 1 and 2 and i s
provi ded mai nl y to faci l i tate i nterconnecti ons between PCB l i nes of di fferent
wi dth i n l ayout.
PCSTEP (PCB Symmetric Steps) 9-43
(for PCSUBi , i =1, 2, ... , 7) i f Hl =0.
thermal noi se).
9-44 PCSUB1 (1-Layer Printed Circuit Substrate)
PCSUB1 (1-Layer Printed Circuit Substrate)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
H1 > 0, Er 1, Si gma 0
T 0, Hu 0, Hl 0, W > 0
H1 Thickness of dielectric layer #1 mil 25.0
Hu Upper ground plane spacing mil 100.0
T Metal thickness (for loss calculations only) mil 1.0
W Distance between sidewalls mil 500.0
Hu
H1
Hl
= o Er
= eo
= o
W
T
1
2
PCSUB1 (1-Layer Printed Circuit Substrate) 9-45
Notes/Equations
1. Refer to Assumpti ons and Li mi tati ons on page 9-2 for i mportant i nformati on.
2. A PCSUBi (i =1,2, ... , 7) i s requi red for al l PCB components.
3. PCSUBi speci fi es a mul ti -l ayered di el ectri c substrate wi th the number of
di el ectri c l ayers=i . The di el ectri c constant of al l the l ayers i s the same but the
thi ckness of each l ayer can be di fferent. The structure i s encl osed by metal
si dewal l s.
7
7.
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Hi > 0 for Hi = 1, 2, Er 1, Si gma 0
T 0, Hu 0, Hl 0, W > 0
Hu
H2
Hl
= o Er
= o
= o
W
H1
= o Er
T
1
2
3
Notes/Equations
si dewal l s.
7
7.
Symbol
Illustration
Available in ADS
Parameters
Hu
H3
Hl
= o
= o
W
H2
= o Er
= o Er
= o Er
H1
T
1
2
3
4
Range of Usage
Hi > 0 for Hi = 1, ... , 3, Er 1, Si gma 0
T 0, Hu 0, Hl 0, W > 0
Notes/Equations
si dewal l s.
7
7.
Symbol
Illustration
Available in ADS
Parameters
Hu
H4
Hl
= o
= o
W
H3
= o Er
= o Er
H1
= o Er
= o Er
H2
T
1
2
3
4
5
Range of Usage
Hi > 0 for Hi = 1, ... , 4, Er 1, Si gma 0
T 0, Hu 0, Hl 0, W > 0
Notes/Equations
si dewal l s.
7
7.
Symbol
Illustration
Available in ADS
Parameters
Hu
H5
Hl
= o
= o
W
H4
H2
= o Er
H3
= o Er
= o Er
= o Er
= o Er
H1
T
1
2
3
4
5
6
Range of Usage
Hi > 0 for Hi = 1,..., 5, Er 1,
Si gma 0, T 0, Hu 0, Hl 0, W > 0
Notes/Equations
si dewal l s.
7
7.
Symbol
Illustration
Available in ADS
Parameters
Hu
H6
Hl
= o
= o
W
H5
H3
= o Er
H4
= o Er
= o Er
H2
= o Er
= o Er
= o Er
H1
T
1
2
3
4
5
6
7
Range of Usage
Hi > 0 for Hi = 1, ... , 6, Er 1,
Si gma 0, T 0, Hu 0, Hl 0, W > 0
Notes/Equations
si dewal l s.
7
7.
Symbol
Illustration
Available in ADS
Parameters
Hu
H7
Hl
= o
= o
W
H6
H4
= o Er
H5
= o Er
= o Er
H3
= o Er
= o Er
= o Er
H2
= o Er H1
T 1
2
3
4
5
6
7
8
Range of Usage
Hi > 0 for Hi = 1, ... , 7, Er 1,
Si gma 0, T 0, Hu 0, Hl 0, W > 0
Notes/Equations
si dewal l s.
7
7.
9-58 PCTAPER (PC Tapered Line)
PCTAPER (PC Tapered Line)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
W1, W2 > 0
1 CLayer Nl ayers+1
where
Notes/Equations
1. Thi s component i s model ed as PCLI N1. Wi dth of the l i ne i s assumed to be (W1
+ W2)/2. The si ngl e l i ne i s assumed to be l ocated hal fway between and paral l el
to the si dewal l s. The di stance between the si dewal l s i s gi ven as a part of the
PCSUBi parameter W.
PCTAPER (PC Tapered Line) 9-59
component.
3. Thi s component i s provi ded mai nl y to faci l i tate i nterconnecti on between PCB
l i nes of di fferent wi dths i n l ayout.
(for PCSUBi , i =1,2,..., 7) i f Hl =0.
7
7.
thermal noi se).
9-60 PCTEE (Printed Circuit T-Junction)
PCTEE (Printed Circuit T-Junction)
Symbol
Illustration
Available in ADS
Parameters
Range of Usage
Wi > 0 for Wi = 1, ... , 3
1 CLayer Nl ayers+1
where
Notes/Equations
1. Thi s component i s treated as an i deal connecti on between pi ns 1, 2, and 3, and
has been provi ded mai nl y to faci l i tate i nterconnecti ons between PCB l i nes
ori ented at di fferent angl es i n l ayout.
PCTEE (Printed Circuit T-Junction) 9-61
(for PCSUBi , i =1,2,..., 7) i f Hl =0.
thermal noi se).
9-62 PCTRACE (Single PCB Line (Trace))
PCTRACE (Single PCB Line (Trace))
Symbol
Available in ADS
Parameters
Range of Usage
W > 0
1 CLayer Nl ayers+1
where
Notes/Equations
1. Thi s component i s model ed as PCLI N1. The si ngl e l i ne i s assumed to be l ocated
hal fway between and paral l el to the si dewal l s. The di stance between the
si dewal l s i s gi ven as a part of the PCSUBi parameter W.
component.
W Width of line mil 10.0
PCB Model Basis and Limits 9-63
(for PCSUBi , i =1,2,..., 7) i f Hl =0.
thermal noi se).
9. Thi s component i s provi ded mai nl y to faci l i tate i nterconnecti ons between PCB
l i nes i n l ayout.
10. Layout artwork requi res pl aci ng a PCSUBi (i =1,2, ... , 7) pri or to pl aci ng the
9-64 PCB Model Basis and Limits
Index-1
Index
A
AIRIND1, 4-2
AIRIND2, 4-4
B
BALUN1, 4-6
BALUN2, 4-8
BFINLT, 1-4
BONDW_Shape, 4-10
BONDW_Usershape, 4-14
BONDW1 to BONDW50, 4-15
C
CIND2, 4-29
CLIN, 8-2
CLINP, 8-3
COAX, 8-6
COAX_MDS, 8-8
CoaxTee, 8-10
COMBINE2ML, 3-2
COMBINE3ML, 3-4
COMBINE4ML, 3-6
COMBINE5ML, 3-8
CPW, 7-2
CPWCGAP, 7-4
CPWCPL2, 7-6
CPWCPL4, 7-8
CPWEF, 7-10
CPWEGAP, 7-12
CPWG, 7-14
CPWOC, 7-16
CPWSC, 7-18
CPWSUB, 7-20
D
DR, 8-11
H
HYBCOMB1, 4-31
HYBCOMB2, 4-34
I
IFINL, 1-8
IFINLT, 1-10
M
MACLIN, 2-2
MACLIN3, 2-5
MBEND, 2-8
MBEND2, 2-11
MBEND3, 2-13
MBSTUB, 2-15
MCFIL, 2-17
MCORN, 2-22
MCROS, 2-24
MCROSO, 2-26
MCURVE, 2-29
MCURVE2, 2-31
MEANDER, 2-33
MGAP, 2-35
MICAP1, 2-37
MICAP2, 2-40
MICAP3, 2-43
MICAP4, 2-46
ML16CTL_C, 3-10
ML1CTL_C to ML8CTL_C, 3-10
ML2CTL_V to ML10CTL_V, 3-13
MLACRNR1, 3-16
MLACRNR16, 3-17
MLACRNR2 to MLACRNR8, 3-17
MLCLE, 3-19
MLCRNR1 to MLCRNR8, 3-22
MLCRNR16, 3-22
MLCROSSOVER1 to MLCROSSOVER8,
3-24
MLEF, 2-58
MLJCROSS, 3-26
MLJGAP, 3-27
MLJTEE, 3-28
MLOC, 2-63
MLOPENSTUB, 3-30
MLRADIAL1 to MLRADIAL5, 3-31
MLSC, 2-66
MLSLANTED1 to MLSLANTED8, 3-33
MLSLANTED16, 3-33
MLSUBSTRATE12, 3-35
MLSUBSTRATE14, 3-35
MLSUBSTRATE16, 3-35
MLSUBSTRATE2 to MLSUBSTRATE10,
3-35
Index-2
MLSUBSTRATE32, 3-35
MLSUBSTRATE40, 3-35
MLVIAHOLE, 3-39
MLVIAPAD, 3-42
MRIND, 2-69
MRINDELA, 2-72
MRINDELM, 2-76
MRINDNBR, 2-81
MRINDSBR, 2-84
MRINDWBR, 2-88
MRSTUB, 2-92
MSABND_MDS, 2-94
MSIND, 2-96
MSLIT, 2-98
MSOBND_MDS, 2-101
MSOP, 2-103
MSSPLC_MDS, 2-105
MSSPLR_MDS, 2-107
MSSPLS_MDS, 2-109
MSTEP, 2-111
MSUB, 2-114
MSUBST3, 2-118
MTAPER, 2-120
MTEE, 2-122
MTEE_ADS, 2-124
MTFC, 2-127
MUC10, 4-56
MUC2, 4-37
MUC3, 4-39
MUC4, 4-41
MUC5, 4-43
MUC6, 4-45
MUC7, 4-47
MUC8, 4-50
MUC9, 4-53
P
PCBEND, 9-3
PCCORN, 9-5
PCCROS, 9-7
PCCURVE, 9-9
PCILC, 9-11
PCLIN1, 9-13
PCLIN10, 9-38
PCLIN2, 9-15
PCLIN3, 9-17
PCLIN4, 9-19
PCLIN5, 9-22
PCLIN6, 9-25
PCLIN7, 9-28
PCLIN8, 9-31
PCLIN9, 9-34
PCSTEP, 9-42
PCSUB1, 9-44
PCSUB2, 9-46
PCSUB3, 9-48
PCSUB4, 9-50
PCSUB5, 9-52
PCSUB6, 9-54
PCSUB7, 9-56
PCTAPER, 9-58
PCTEE, 9-60
PCTRACE, 9-62
R
RCLIN, 8-15
RIBBON, 2-130
RWG, 7-21
RWGINDF, 7-23
RWGT, 7-25
S
SAGELIN, 4-60
SAGEPAC, 4-61
SBCLIN, 5-2
SBEND, 5-5
SBEND2, 5-7
SCLIN, 5-10
SCROS, 5-13
SCURVE, 5-16
SLEF, 5-18
SLIN, 5-20
SLINO, 5-23
SLOC, 5-26
SLSC, 5-29
SMITER, 5-32
SOCLIN, 5-35
SSCLIN, 6-2
SSLIN, 6-4
SSSUB, 6-6
SSTEP, 5-38
SSUB, 5-40
SSUBO, 5-42
STEE, 5-44
Index-3
T
TAPIND1, 4-62
TAPIND2, 4-64
TFC, 2-132
TFR, 2-135
TLIN, 8-16
TLIN4, 8-17
TLINP, 8-18
TLINP4, 8-20
TLOC, 8-22
TLPOC, 8-23
TLPSC, 8-25
TLSC, 8-27
U
UFINL, 1-12
UFINLT, 1-14
V
VIA, 2-137
VIA2, 2-139, 2-142
VIAFC, 2-145
VIAGND, 2-142
VIAHS, 2-147
VIAQC, 2-149
VIASC, 2-151
VIASTD, 2-153
VIATTD, 2-155
W
WIRE, 2-157
X
X9TO1COR, 4-66
X9TO1SLV, 4-70
X9TO4COR, 4-68
X9TO4SLV, 4-72
XFERTL1, 4-74
XFERTL2, 4-77
XTAL1, 4-80
XTAL2, 4-82
Index-4

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