TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor

July 2008

TIP31/TIP31A/TIP31B/TIP31C
NPN Epitaxial Silicon Transistor
Features
Complementary to TIP32/TIP32A/TIP32B/TIP32C

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings TC=25C unless otherwise noted

Symbol VCBO Collector-Base Voltage Parameter : TIP31 : TIP31A : TIP31B : TIP31C Value 40 60 80 100 40 60 80 100 5 3 5 1 40 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W C C

VCEO

Collector-Emitter Voltage : TIP31 : TIP31A : TIP31B : TIP31C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C)

VEBO IC ICP IB PC

TJ TSTG

Junction Temperature Storage Temperature

2008 Fairchild Semiconductor Corporation TIP31/TIP31A/TIP31B/TIP31C Rev. A

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TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor

Electrical Characteristics TC=25C unless otherwise noted

Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : TIP31 : TIP31A : TIP31B : TIP31C Collector Cut-off Current : TIP31/31A : TIP31B/31C Collector Cut-off Current : TIP31 : TIP31A : TIP31B : TIP31C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = 40V, VEB = 0 VCE = 60V, VEB = 0 VCE = 80V, VEB = 0 VCE = 100V, VEB = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A IC = 3A, IB = 375mA VCE = 4V, IC = 3A VCE = 10V, IC = 500mA, f = 1MHz 3.0 25 10 200 200 200 200 1 A A A A mA Test Condition Min. Max. Units

IC = 30mA, IB = 0

40 60 80 100

V V V V

ICEO

VCE = 30V, IB = 0 VCE = 60V, IB = 0

0.3 0.3

mA mA

ICES

50 1.2 1.8 V V MHz

VCE(sat) VBE(sat) fT

* Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product

* Pulse Test: PW300ms, Duty Cycle2%

2008 Fairchild Semiconductor Corporation TIP31/TIP31A/TIP31B/TIP31C Rev. A

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TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor

Typical Characteristics
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

1000

10000

VCE = 4V

IC/IB = 10

hFE, DC CURRENT GAIN

100

1000

VBE(sat)

10

100

VCE(sat)

1 1 10 100 1000 10000

10 1 10 100 1000 10000

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

10

50

IC(MAX) (PULSE)

45

IC[A], COLLECTOR CURRENT

IC(MAX) (DC)
s 5m s 1m

PC[W], POWER DISSIPATION

100s

40 35 30 25 20 15 10 5 0

TIP31 VCEO MAX. TIP31A VCEO MAX. TIP31B VCEO MAX. TIP31C VCEO MAX.
0.1 10 100

25

50
o

75

100

125

150

175

200

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 3. Safe Operating Area

Figure 4. Power Derating

2008 Fairchild Semiconductor Corporation TIP31/TIP31A/TIP31B/TIP31C Rev. A

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TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor

Mechanical Dimensions

TO220

2008 Fairchild Semiconductor Corporation TIP31/TIP31A/TIP31B/TIP31C Rev. A

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TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor

2008 Fairchild Semiconductor Corporation TIP31/TIP31A/TIP31B/TIP31C Rev. A

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