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Code: 9D06106c M.Tech - I Semester Regular and Supplementary Examinations, April/May 2012 LOW POWER VLSI DESIGN (Common to DSCE and DECS) Time: 3 hours Max Marks: 60 Answer any FIVE questions All questions carry equal marks ***** 1 (a) (b) 2 (a) (b) 3 (a) (b) 4 5 (a) (b) 6 (a) (b) (c) Explain clearly a comparison of CMOS, bipolar and BICMOS technologies in terms of speed and power. Explain in detail the V T limitations (threshold voltage limitations) of low power designs. What are the main advantages of BICMOS technology? Mention the classification of BICMOS technology and explain clears about any one. Discuss about the limitations of DSM technology. Explain briefly about: (i) SOICMOS (ii) Lateral BJT on SOI.

Explain about the Philips MOS 9 model of a MOSFET and its limitations. Write short notes on power dissipation in CMOS technology. Draw different conventional CMOS logic gates and explain about them.

What is ESD? Draw the ESD free BICMOS digital circuit. Explain clearly about it and draw the performance graphs of ESD free circuit in terms of parameters. What is the need of low power latches and flip flops? Mention the 4 kinds of quality measures and explain them. Discuss about the clocking networks used in IC technology. What is skew? How does it effect the performance of clocked flip flop design? *****

7 (a) (b) 8 (a) (b)

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