Rivero, Antoinette Marie F. ECE 32 ECET311 Engr.

Acapulco

Field-effect transistor (FET)

is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type ofcharge carrier in a semiconductor material. FETs are unipolar transistors as they involve single-carrier-type operation. The concept of the FET predates the bipolar junction transistor (BJT), though it was not physically implemented until after BJTs due to the limitations of semiconductor materials and the relative ease of manufacturing BJTs compared to FETs at the time.

Types of FET: JFET -(Junction field-effect transistor) uses a reverse biased pn junction to separate the gate from the body. - it can be fabricated with either an N-channel or P-channel though N-channel is generally preferred.

- for fabricating an N-channel JFET, first a narrow bar of N-type semiconductor material is taken and then two P-type junctions are diffused on opposite sides of its middle part. - these junctions form two P-N diodes or gates and the area between this gates is called channel. - the two P-regions are internally connected and a single lead is brought out which is called the gate terminal. - Ohmic contacts are made at the two ends of the bar - one lead is called source terminal and the other drain terminal. - when potential difference is established between drain and source, current flows along the length of the bar through the channel located between the two P-regions.

MOSFET - (metaloxidesemiconductor field-effect transistor) utilizes an insulator (typically SiO2) between the gate and the body. - it can be operated in both depletion mode and enhancement mode by changing the polarity of VGS. - it is known as normally-ON MOSFET - it has source, gate and drain - its gate is insulated from its conducting channel by an ultra-thin metal-oxide insulating film.