C945

NPN Transistors
P b Lead(Pb)-Free

TO-92

1. EMITTER 2. COLLECTOR 3. BASE

0.4 Junction Temperature Storage Temperature Tj TSTG +150 -40 to + 150

C C

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ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain VCE=6.0V, IC=1mA VCE=6.0V, IC=0.1mA Collector-Emitter Saturation Voltage IC=100mA, IB=10mA Base-Emitter Voltage IC=100mA, IB=10mA TransitionFrequence VCE = 6V, IC = 10mA, f = 30MHz Collector Output Capacitance VCB = 10V, IE = 0, f = 1MHz Noise gure VCE = 6V, IC = 0.1mA, Rg = 10k, f = 1KMHz hFE1 hFE2 VCE(sat) VBE(sat) fT Cob NF 70 40 200 4.0 700 0.3 1.0 3.0 10 V V MHz pF dB

CLASSIFICATION OF hFE1 Rank Range O 70-140 Y 120-240 GR 200-400 BL 350-700

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FIG1. Total Power Dissipation vs Ambient Temperature

FIG.2 Collector Current vs Collector to Emitter Voltage

FIG.3 Collector and Bade Saturation Voltage vs Collector Current

FIG.4 Gain Bandwidth Product vs Emitter Current

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C945
TO-92 Outline Dimensions
E

unit:mm

J K

Dim A B C D E G H J K L

TO-92

Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50

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