2

N
3
9
0
4

/

M
M
B
T
3
9
0
4

/

P
Z
T
3
9
0
4

N
P
N

G
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P
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2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 1
October 2011
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
Features
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
Absolute Maximum Ratings* T
a
=25C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T
a
=25C unless otherwise noted
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector Current - Continuous 200 mA
T
J ,
T
stg
Operating and Storage J unction Temperature Range -55 to +150 C
Symbol Parameter
Max.
Units
2N3904 *MMBT3904 **PZT3904
P
D
Total Device Dissipation
Derate above 25C
625
5.0
350
2.8
1,000
8.0
mW
mW/C
R
J C
Thermal Resistance, J unction to Case 83.3 C/W
R
J A
Thermal Resistance, J unction to Ambient 200 357 125 C/W
2N3904 MMBT3904
PZT3904
EBC
TO-92 SOT-23 SOT-223
Mark:1A
C
B
E
E
B
C
C
2
N
3
9
0
4

/

M
M
B
T
3
9
0
4

/

P
Z
T
3
9
0
4

N
P
N

G
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P
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2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 2
Electrical Characteristics T
a
=25C unless otherwise noted
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%
Ordering Information
Symbol Parameter Test Condition Min. Max. Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
=1.0mA, I
B
=0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
=10A, I
E
=0 60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
=10A, I
C
=0 6.0 V
I
BL
Base Cutoff Current V
CE
=30V, V
EB
=3V 50 nA
I
CEX
Collector Cutoff Current V
CE
=30V, V
EB
=3V 50 nA
ON CHARACTERISTICS*
h
FE
DC Current Gain I
C
=0.1mA, V
CE
=1.0V
I
C
=1.0mA, V
CE
=1.0V
I
C
=10mA, V
CE
=1.0V
I
C
=50mA, V
CE
=1.0V
I
C
=100mA, V
CE
=1.0V
40
70
100
60
30
300
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=1.0mA
I
C
=50mA, I
B
=5.0mA
0.2
0.3
V
V
V
BE(sat)
Base-Emitter Saturation Voltage I
C
=10mA, I
B
=1.0mA
I
C
=50mA, I
B
=5.0mA
0.65 0.85
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product I
C
=10mA, V
CE
=20V,
f =100MHz
300 MHz
C
obo
Output Capacitance V
CB
=5.0V, I
E
=0,
f =1.0MHz
4.0 pF
C
ibo
Input Capacitance V
EB
=0.5V, I
C
=0,
f =1.0MHz
8.0 pF
NF Noise Figure I
C
=100A, V
CE
=5.0V,
R
S
=1.0k,
f =10Hz to 15.7kHz
5.0 dB
SWITCHING CHARACTERISTICS
t
d
Delay Time V
CC
=3.0V, V
BE
=0.5V
I
C
=10mA, I
B1
=1.0mA
35 ns
t
r
Rise Time 35 ns
t
s
Storage Time V
CC
=3.0V, I
C
=10mA,
I
B1
=I
B2
=1.0mA
200 ns
t
f
Fall Time 50 ns
Part Number Marking Package Packing Method Pack Qty
2N3904BU 2N3904 TO-92 BULK 10000
2N3904TA 2N3904 TO-92 AMMO 2000
2N3904TAR 2N3904 TO-92 AMMO 2000
2N3904TF 2N3904 TO-92 TAPE REEL 2000
2N3904TFR 2N3904 TO-92 TAPE REEL 2000
MMBT3904 1A SOT-23 TAPE REEL 3000
MMBT3904_D87Z 1A SOT-23 TAPE REEL 10000
PZT3904 3904 SOT-223 TAPE REEL 2500
2
N
3
9
0
4

/

M
M
B
T
3
9
0
4

/

P
Z
T
3
9
0
4

N
P
N

G
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2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 3
Typical Performance Characteristics
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V







-

B
A
S
E
-
E
M
I
T
T
E
R

O
N

V
O
L
T
A
G
E

(
V
)
B
E
(
O
N
)
C
V = 5V
CE
25 C
125 C
- 40 C
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V







-

B
A
S
E
-
E
M
I
T
T
E
R

V
O
L
T
A
G
E

(
V
)
B
E
S
A
T
C
= 10
25 C
125 C
- 40 C
Collector-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V







-

C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R

V
O
L
T
A
G
E

(
V
)
C
E
S
A
T
25 C
C
= 10
125 C
- 40 C
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I





-

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

(
n
A
)
A
V = 30V
CB
C
B
O

Capacitance vs
Reverse Bias Voltage
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
C
A
P
A
C
I
T
A
N
C
E

(
p
F
)
C
obo
C
ibo
f = 1.0 MHz
Typical Pulsed Current Gain
vs Collector Current
0.1 1 10 100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h





-

T
Y
P
IC
A
L

P
U
L
S
E
D

C
U
R
R
E
N
T

G
A
I
N
F
E
- 40 C
25 C
C
V = 5V
CE
125 C

2
N
3
9
0
4

/

M
M
B
T
3
9
0
4

/

P
Z
T
3
9
0
4

N
P
N

G
e
n
e
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a
l

P
u
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p
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s
e

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2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 4
Typical Performance Characteristics (continued)
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P



-

P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N

(
W
)
D
o
SOT-223
SOT-23
TO-92
Noise Figure vs Frequency
0.1 1 10 100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
N
F


-

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
V = 5.0V
CE
I = 100 A, R = 500
C S
I = 1.0 mA
R = 200
C
S
I = 50 A
R = 1.0 k
C
S
I = 0.5 mA
R = 200
C
S
k
Noise Figure vs Source Resistance
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
N
F


-

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
I = 100 A
C
I = 1.0 mA
C
S
I = 50 A
C
I = 5.0 mA
C

-

D
E
G
R
E
E
S
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Angle
vs Frequency
1 10 100 1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h






-

C
U
R
R
E
N
T

G
A
I
N

(
d
B
)

V = 40V
CE
I = 10 mA
C
h
fe
f
e
Turn-On Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
T
I
M
E


(
n
S
)
I = I =
B1
C
B2
I c
10
40V
15V
2.0V
t @V = 0V
CB d
t @V = 3.0V
CC r
Rise Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t




-

R
I
S
E

T
I
M
E


(
n
s
)
I = I =
B1
C
B2
I
c
10
T = 125C
T = 25C
J
V = 40V
CC
r
J

A
k A
A

A
( k )

2
N
3
9
0
4

/

M
M
B
T
3
9
0
4

/

P
Z
T
3
9
0
4

N
P
N

G
e
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a
l

P
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2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 5
Typical Performance Characteristics (continued)
Storage Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t




-

S
T
O
R
A
G
E

T
I
M
E


(
n
s
)
I = I =
B1
C
B2
I
c
10
S
T = 125C
T = 25C
J
J
Fall Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t




-

F
A
L
L

T
I
M
E


(
n
s
)
I = I =
B1
C
B2
I
c
10
V = 40V
CC
f
T = 125C
T = 25C
J
J
Current Gain
0.1 1 10
10
100
500
I - COLLECTOR CURRENT (mA)
h




-

C
U
R
R
E
N
T

G
A
I
N
V = 10 V
CE
C
f
e
f = 1.0 kHz
T = 25 C
A
o
Output Admittance
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h




-

O
U
T
P
U
T

A
D
M
I
T
T
A
N
C
E

(


m
h
o
s
)
V = 10 V
CE
C
o
e
f = 1.0 kHz
T = 25 C
A
o
Input Impedance
0.1 1 10
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
h




-

I
N
P
U
T

I
M
P
E
D
A
N
C
E

(
k



)
V = 10 V
CE
C
i
e
f = 1.0 kHz
T = 25 C
A
o

Voltage Feedback Ratio

0.1 1 10
1
2
3
4
5
7
10
I - COLLECTOR CURRENT (mA)
h




-

V
O
L
T
A
G
E

F
E
E
D
B
A
C
K

R
A
T
I
O

(
x
1
0




)
V = 10 V
CE
C
r
e
f = 1.0 kHz
T = 25 C
A
o
_
4
(
k

n
h
o
s
2
N
3
9
0
4

/

M
M
B
T
3
9
0
4

/

P
Z
T
3
9
0
4

N
P
N

G
e
n
e
r
a
l

P
u
r
p
o
s
e

A
m
p
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2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 6
Test Circuits
10 K
3.0 V
275
t
1
C
1
< << << 4.0 pF
Duty Cycle = == == 2%
Duty Cycle = == == 2%
< << << 1.0 ns
- 0.5 V
300 ns
10.6 V
10 < << << t
1
< << << 500 s
10.9 V
- 9.1 V
< << << 1.0 ns
0
0
10 K
3.0 V
275
C
1
< << << 4.0 pF
1N916
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
300ns
=
<1.0ns
<4.0pF
<4.0pF
<1.0ns
=
10 <t
1
<500 s

k
k
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Rev. I57