Gia o Trinh Linh Kien

Gio trnh Linh Kin in T
Li ni u
*********
Linh kin in t l kin thc bc u v cn bn ca ngnh in t.
Gio trnh c bin son t cc bi ging ca tc gi trong nhiu nm qua ti Khoa
Cng Ngh v Cng Ngh Thng Tin, Trng i hc Cn Th v cc Trung Tm Gio dc
thng xuyn ng bng sng Cu Long sau qu trnh sa cha v cp nht.
Gio trnh ch yu dng cho sinh vin chuyn ngnh in T Vin Thng v T ng
Ha. Cc sinh vin khi K thut v nhng ai ham thch in t cng tm thy y nhiu iu
b ch.
Gio trnh bao gm 9 chng:
T chng 1 n chng 3: Nhc li mt s kin thc cn bn v vt l vi m, cc mc
nng lng v di nng lng trong cu trc ca kim loi v cht bn dn in v dng n nh
cha kha kho st cc linh kin in t.
T chng 4 n chng 8: y l i tng chnh ca gio trnh. Trong cc chng ny,
ta kho st cu to, c ch hot ng v cc c tnh ch yu ca cc linh kin in t thng
dng. Cc linh kin qu c bit v t thng dng c gii thiu ngn gn m khng i vo
phn gii.
Chng 9: Gii thiu s hnh thnh v pht trin ca vi mch.
Ngi vit chn thnh cm n anh Nguyn Trung Lp, Ging vin chnh ca B mn Vin
Thng v T ng Ha, Khoa Cng Ngh Thng Tin, Trng i hc Cn Th c k bn
tho v cho nhiu kin qu bu.
Cn Th, thng 12 nm 2003

Trng Vn Tm
Trang 1 Bin son: Trng Vn Tm
Mc lc
---------
Chng I.......................................................................................................................................................................................... 4
MC NNG LNG V DI NNG LNG......................................................................................................................... 4

I. KHI NIM V C HC NGUYN LNG: ................................................................................................................. 4
II. PHN B IN T TRONG NGUYN T THEO NNG LNG: ............................................................................. 6
III. DI NNG LNG: (ENERGY BANDS) ........................................................................................................................ 8

Chng II ...................................................................................................................................................................................... 12
S DN IN TRONG KIM LOI........................................................................................................................................... 12

I. LINH NG V DN XUT: .................................................................................................................................. 12
II. PHNG PHP KHO ST CHUYN NG CA HT T BNG NNG LNG:............................................ 14
III. TH NNG TRONG KIM LOI: ..................................................................................................................................... 15
IV. S PHN B CA IN T THEO NNG LNG: .................................................................................................. 18
V. CNG RA (HM CNG): ................................................................................................................................................ 20
VI. IN TH TIP XC (TIP TH): ................................................................................................................................. 21

Chng III..................................................................................................................................................................................... 22
CHT BN DN IN............................................................................................................................................................... 22

I. CHT BN DN IN THUN HAY NI BM: ........................................................................................................ 22
II. CHT BN DN NGOI LAI HAY C CHT PHA: ................................................................................................... 24
1. Cht bn dn loi N: (N - type semiconductor) ............................................................................................................... 24
2. Cht bn dn loi P:......................................................................................................................................................... 25
3. Cht bn dn hn hp: ..................................................................................................................................................... 26
III. DN SUT CA CHT BN DN: ............................................................................................................................... 27
IV. C CH DN IN TRONG CHT BN DN: ........................................................................................................... 29
V. PHNG TRNH LIN TC: .......................................................................................................................................... 30

Chng IV..................................................................................................................................................................................... 32
NI P-N V DIODE..................................................................................................................................................................... 32

I. CU TO CA NI P-N:................................................................................................................................................. 32
II. DNG IN TRONG NI P-N KHI C PHN CC: ............................................................................................. 34
1. Ni P-N c phn cc thun:......................................................................................................................................... 35
2. Ni P-N khi c phn cc nghch: ................................................................................................................................ 38
III. NH HNG CA NHIT LN NI P-N:.............................................................................................................. 40
IV. NI TR CA NI P-N. .................................................................................................................................................. 41
1. Ni tr tnh: (Static resistance). ....................................................................................................................................... 41
2. Ni tr ng ca ni P-N: (Dynamic Resistance)............................................................................................................ 42
V. IN DUNG CA NI P-N. ............................................................................................................................................ 44
1. in dung chuyn tip (in dung ni)........................................................................................................................... 44
2. in dung khuch tn. (Difusion capacitance) ................................................................................................................ 45
VI. CC LOI DIODE THNG DNG................................................................................................................................. 45
1. Diode chnh lu: .............................................................................................................................................................. 45
2. Diode tch sng. .............................................................................................................................................................. 53
3. Diode schottky:................................................................................................................................................................ 53
4. Diode n p (diode Zenner): ............................................................................................................................................ 54
5. Diode bin dung: (Varicap Varactor diode).................................................................................................................. 57
6. Diode hm (Tunnel diode)............................................................................................................................................... 58
Bi tp cui chng ...................................................................................................................................................................... 59

Chng V....................................................................................................................................................................................... 61
TRANSISTOR LNG CC..................................................................................................................................................... 61

I. CU TO C BN CA BJT.......................................................................................................................................... 61
II. TRANSISTOR TRNG THI CHA PHN CC. .................................................................................................... 61
III. C CH HOT NG CA TRANSISTOR LNG CC. ......................................................................................... 63
IV. CC CCH RP TRANSISTOR V LI DNG IN. ......................................................................................... 64
V. DNG IN R TRONG TRANSISTOR. ........................................................................................................................ 66
VI. C TUYN V-I CA TRANSISTOR. ........................................................................................................................... 67
1. Mc theo kiu cc nn chung: ......................................................................................................................................... 68
2. Mc theo kiu cc pht chung. ........................................................................................................................................ 69
3. nh hng ca nhit ln cc c tuyn ca BJT. ....................................................................................................... 72
VII. IM IU HNH NG THNG LY IN MT CHIU............................................................................... 73
VIII. KIU MU MT CHIU CA BJT. ............................................................................................................................. 78
IX. BJT VI TN HIU XOAY CHIU.................................................................................................................................. 80
1. M hnh ca BJT: ............................................................................................................................................................ 80
2. in dn truyn (transconductance) ................................................................................................................................ 82
3. Tng tr vo ca transistor: ............................................................................................................................................. 83
4. Hiu ng Early (Early effect) .......................................................................................................................................... 85
5. Mch tng ng xoay chiu ca BJT: ......................................................................................................................... 86
Bi tp cui chng ...................................................................................................................................................................... 90

CHNG 6 ................................................................................................................................................................................... 91
TRANSISTOR TRNG NG.................................................................................................................................................. 91

I. CU TO CN BN CA JFET:.................................................................................................................................... 91
II. C CH HOT NG CA JFET: ................................................................................................................................. 93
III. C TUYN TRUYN CA JFET. ................................................................................................................................ 99
IV. NH HNG CA NHIT TRN JFET. ............................................................................................................... 100
V. MOSFET LOI HIM (DEPLETION MOSFET: DE MOSFET)................................................................................... 102
VI. MOSFET LOI TNG (ENHANCEMENT MOSFET: E-MOSFET) ............................................................................ 107
VII. XC NH IM IU HNH: ................................................................................................................................... 111
VIII. FET VI TN HIU XOAY CHIU V MCH TNG NG VI TN HIU NH........................................ 113
IX. IN DN TRUYN (TRANSCONDUCTANCE) CA JFET V DEMOSFET. ....................................................... 117
X. IN DN TRUYN CA E-MOSFET. ....................................................................................................................... 118
XI. TNG TR VO V TNG TR RA CA FET. ........................................................................................................ 119
XII. CMOS TUYN TNH (LINEAR CMOS). ...................................................................................................................... 120
XIII. MOSFET CNG SUT: V-MOS V D-MOS.............................................................................................................. 122
1. V-MOS: ......................................................................................................................................................................... 122
2. D-MOS: ......................................................................................................................................................................... 123
Bi tp cui chng .................................................................................................................................................................... 125

CHNG VII ............................................................................................................................................................................. 126
LINH KIN C BN LP BN DN PNPN V NHNG LINH KIN KHC ............................................................... 126

I. SCR (THYRISTOR SILICON CONTROLLED RECTIFIER)..................................................................................... 126
1. Cu to v c tnh: ....................................................................................................................................................... 126
2. c tuyn Volt-Ampere ca SCR:................................................................................................................................. 128
3. Cc thng s ca SCR: .................................................................................................................................................. 129
4. SCR hot ng in th xoay chiu............................................................................................................................ 130
5. Vi ng dng n gin: ................................................................................................................................................. 131
II. TRIAC (TRIOD AC SEMICONDUCTOR SWITCH)..................................................................................................... 133
III. SCS (SILICON CONTROLLED SWITCH). ................................................................................................................ 135
IV. DIAC................................................................................................................................................................................ 136
V. DIOD SHOCKLEY. ......................................................................................................................................................... 137
VI. GTO (GATE TURN OFF SWITCH). ........................................................................................................................... 138
VII. UJT (UNIJUNCTION TRANSISTOR TRANSISTOR C NI). ............................................................................ 140
1. Cu to v c tnh ca UJT: ......................................................................................................................................... 140
2. Cc thng s k thut ca UJT v vn n nh nhit cho nh: ................................................................................ 143
3. ng dng n gin ca UJT:......................................................................................................................................... 144
VIII. PUT (Programmable Unijunction Transistor)................................................................................................................. 145

CHNG VIII............................................................................................................................................................................ 148
LINH KIN QUANG IN T................................................................................................................................................ 148
I. NH SNG. .................................................................................................................................................................... 148
II. QUANG IN TR (PHOTORESISTANCE)................................................................................................................ 149
III. QUANG DIOD (PHOTODIODE).................................................................................................................................... 151
IV. QUANG TRANSISTOR (PHOTO TRANSISTOR). ....................................................................................................... 152
V. DIOD PHT QUANG (LED-LIGHT EMITTING DIODE)............................................................................................ 154
VI. NI QUANG.................................................................................................................................................................... 155

CHNG IX............................................................................................................................................................................... 157
S LC V IC ........................................................................................................................................................................ 157

I. KHI NIM V IC - S KT T TRONG H THNG IN T.............................................................................. 157
II. CC LOI IC. ................................................................................................................................................................. 159
1. IC mng (film IC): ......................................................................................................................................................... 159
2. IC n tnh th (Monolithic IC):.................................................................................................................................... 159
3. IC lai (hibrid IC). ........................................................................................................................................................... 160
III. S LC V QUI TRNH CH TO MT IC N TINH TH. ............................................................................... 160
IV. IC S (IC DIGITAL) V IC TNG T (IC ANALOG). ............................................................................................ 162
1. IC Digital:...................................................................................................................................................................... 162
2. IC analog: ...................................................................................................................................................................... 163
Ti liu tham kho ...................................................................................................................................................................... 163
Chng I
MC NNG LNG V DI NNG LNG
Trong chng ny ch yu nhc li cc kin thc c bn v c hc nguyn lng,
s phn b in t trong nguyn t theo nng lng, t hnh thnh di nng lng
trong tinh th cht bn dn. hc chng ny, sinh vin ch cn c kin thc tng i
v vt l v ha hc i cng. Mc tiu cn t c l hiu c ngha ca di dn
in, di ha tr v di cm, t phn bit c cc cht dn in, bn dn in v cch
in.
I. KHI NIM V C HC NGUYN LNG:
Ta bit rng vt cht c cu to t nhng nguyn t ( l thnh phn nh nht
ca nguyn t m cn gi nguyn tnh cht ca nguyn t ). Theo m hnh ca nh vt
l Anh Rutherford (1871-1937), nguyn t gm c mt nhn mang in tch dng
(Proton mang in tch dng v Neutron trung ho v in) v mt s in t (electron)
mang in tch m chuyn ng chung quanh nhn v chu tc ng bi lc ht ca nhn.
Nguyn t lun lun trung ha in tch, s electron quay chung quanh nhn bng s
proton cha trong nhn - in tch ca mt proton bng in tch mt electron nhng tri
du). in tch ca mt electron l -1,602.10
-19
Coulomb, iu ny c ngha l c c
1 Coulomb in tch phi c 6,242.10
18
electron. in tch ca in t c th o c trc
tip nhng khi lng ca in t khng th o trc tip c. Tuy nhin, ngi ta c
th o c t s gia in tch v khi lng (e/m), t suy ra c khi lng ca
in t l:
m
o
=9,1.10
-31
Kg
l khi lng ca in t khi n chuyn ng vi vn tc rt nh so vi vn tc
nh sng (c=3.10
8
m/s). Khi vn tc in t tng ln, khi lng ca in t c tnh
theo cng thc Lorentz-Einstein:
2
2
o
c
v
1
m
=
e
m
Mi in t chuyn ng trn mt ng trn v chu mt gia tc xuyn tm. Theo
thuyt in t th khi chuyn ng c gia tc, in t phi pht ra nng lng. S mt
nng lng ny lm cho qu o ca in t nh dn v sau mt thi gian ngn, in t
s ri vo nhn. Nhng trong thc t, cc h thng ny l mt h thng bn theo thi
gian. Do , gi thuyt ca Rutherford khng ng vng.
Nh vt l hc an Mch Niels Bohr (1885- 1962) b tc bng cc gi thuyt
sau:
C nhng qu o t bit, trn in t c th di chuyn m khng pht ra nng
lng. Tng ng vi mi qu o c mt mc nng lng nht nh. Ta c mt qu o
dng.

Khi in t di chuyn t mt qu o tng ng vi mc nng lng w
1
sang qu
o khc tng ng vi mc nng lng w
2
th s c hin tng bc x hay hp thu nng
lng. Tn s ca bc x (hay hp thu) ny l:
h
w w
f
1 2

=
Trong , h=6,62.10
-34
J.s (hng s Planck).
Trong mi qu o dng, moment ng lng ca in t bng bi s ca h =
2
h

Moment ng lng: h n
2
h
. n r . v . m =
=
r
+e
-e
v

Hnh 1
Vi gi thuyt trn, ngi ta d on c cc mc nng lng ca nguyn t
hydro v gii thch c quang ph vch ca Hydro, nhng khng gii thch c i vi
nhng nguyn t c nhiu in t. Nhn thy s i tnh gia sng v ht, Louis de
Broglie (Nh vt l hc Php) cho rng c th lin kt mi ht in khi lng m, chuyn
ng vi vn tc v mt bc sng
mv
h
= .
Tng hp tt c gi thuyt trn l mn c hc nguyn lng, kh d c th gii thch
c cc hin tng quan st c cp nguyn t.
Phng trnh cn bn ca mn c hc nguyn lng l phng trnh Schrodinger
c vit nh sau:
0 ) U E (
m . 2
2
= +
h

l ton t Laplacien
2
2
2
2
2
2
z y x

+

=
E: nng lng ton phn
U: th nng
(E-U): ng nng
l mt hm s gi l hm s sng. Hm s ny xc nh xc sut tm thy ht in
trong min khng gian ang kho st.
Trong khi gii phng trnh Schrodinger tm nng lng ca nhng in t trong
mt nguyn t duy nht, ngi ta thy rng mi trng thi nng lng ca electron ph
thuc vo 4 s nguyn gi l 4 s nguyn lng:
S nguyn lng xuyn tm: (S nguyn lng chnh)
Xc nh kch thc ca qu o n=1,2,3,7
S nguyn lng phng v: (S nguyn lng ph)
Xc nh hnh th qu o l=1,2,3,,n-1
S nguyn lng t:
Xc nh phng hng ca qu o ml=0,1, , m l
S nguyn lng Spin:
Xc nh chiu quay ca electron
2
1
- v
2
1
m
s
+ =
Trong mt h thng gm nhiu nguyn t, cc s nguyn lng tun theo nguyn l
ngoi tr Pauli. Nguyn l ny cho rng: trong mt h thng khng th c 2 trng thi
nguyn lng ging nhau, ngha l khng th c hai in t c 4 s nguyn lng hon
ton ging nhau.
II. PHN B IN T TRONG NGUYN T THEO
NNG LNG:
Tt c cc nguyn t c cng s ngun lng chnh hp thnh mt tng c tn l
K,L,M,N,O,P,Q ng vi n=1,2,3,4,5,6,7.
mi tng, cc in t c cng s l to thnh cc ph tng c tn s,p,d,f tng ng
vi l=0,1,2,3
Tng K (n=1) c mt ph tng s c ti a 2 in t.
Tng L (n=2) c mt ph tng s c ti a 2 in t v mt ph tng p c ti a 6 in t.
Tng M (n=3) c mt ph tng s (ti a 2 in t), mt ph tng p (ti a 6 in t) v mt
ph tng d (ti a 10 in t).
Tng N (n=4) c mt ph tng s (ti a 2 in t), mt ph tng p (ti a 6 in t), mt
ph tng d (ti a 10 in t) v mt ph tng f (ti a 14 in t).
Nh vy: Tng K c ti a 2 in t.
Tng L c ti a 8 in t.
Tng M c ti a 18 in t.
Tng N c ti a 32 in t.
Cc tng O,P,Q cng c 4 ph tng v cng c ti a 32 in t.
ng vi mi ph tng c mt mc nng lng v cc mc nng lng c xp
theo th t nh sau:

1 2 3 4 5 6 7

1s 2s 3s 4s 5s 6s 7s
2p 3p 4p 5p
6d
7p
3d 4d
5f
6p
7d
4f
5d
6f 7f

Hnh 2
Khi khng b kch thch, cc trng thi nng lng nh b in t chim trc (gn
nhn hn) khi ht ch mi sang mc cao hn (xa nhn hn). Th d: nguyn t Na c s
in t z=11, c cc ph tng 1s,2s,2p b cc in t chim hon ton nhng ch c 1
in t chim ph tng 3s.
Cch biu din:
Theo mu ca Bohr Theo mc nng lng

NATRI Na
11
1s
2
2s
2
2p
6
3s
1

Na 2-8-1
Na
+11

SILICIUM Si
14
1s
2
2s
2
2p
6
3s
2
3p
2

Si 2-8-4
Si
+14

GERMANIUM Ge
32
1s
2
2s
2
2p
6
3s
2
3p
6
4s
2
3d
10
4p
2

Ge 2-8-18-4
Ge
+32

Hnh 3
Lp bo ha: Mt ph tng bo ha khi c s in t ti a.
Mt tng bo ha khi mi ph tng bo ha. Mt tng bo ha rt bn, khng
nhn thm v cng kh mt in t.
Tng ngoi cng: Trong mt nguyn t, tng ngoi cng khng bao gi cha qu 8
in t. Nguyn t c 8 in t tng ngoi cng u bn vng (trng hp cc kh tr).
Cc in t tng ngoi cng quyt nh hu ht tnh cht ha hc ca mt nguyn
t.
III. DI NNG LNG: (ENERGY BANDS)
Nhng cng trnh kho cu tia X chng t rng hu ht cc cht bn dn u
dng kt tinh.
Ta xt mt mng tinh th gm N nguyn t thuc nhm 4A, th d C
6
. Ta tng
tng rng c th thay i c khong cch gia cc nguyn t m khng thay i cu
to cn bn ca tinh th. Nu cc nguyn t cch nhau mt khong d
1
sao cho tc ng
ln nhau khng ng k th cc mc nng lng ca chng trng vi cc mc nng lng
ca mt nguyn t c nht. Hai ph tng ngoi cng c 2 in t s v 2 in t p
(C
6
=1s
2
2s
2
2p
2
). Do , nu ta khng n cc tng trong, ta c 2N in t chim tt
c 2N trng thi s v c cng mc nng lng; Ta cng c 2N in t p chim 2N trng
thi p. Vy c 4N trng thi p cha b chim. Gi s khong cch gia cc nguyn t
c thu nh hn thnh d
2
, tc dng ca mt nguyn t bt k ln cc nguyn t ln cn
tr thnh quan trng.

Nng lng E
4N trng thi 6N trng thi p
cha b chim Di dn in (2N trng thi b chim)

2p

Di cm EG Di cm

4N trng thi b chim 2s
2N trng thi s
Di ha tr b chim

d
0
d
4
d
3
d
2
d
1

Hnh 4
Ta c mt h thng gm N nguyn t, do cc nguyn t phi tun theo nguyn l
Pauli. 2N in t s khng th c cng mc nng lng m phi c 2N mc nng lng
khc nhau; khong cch gia hai mc nng kng rt nh nhng v N rt ln nn khong
cch gia mc nng lng cao nht v thp nht kh ln, ta c mt di nng lng. 2N
trng thi ca di nng lng ny u b 2N in t chim. Tng t, bn trn di nng
lng ny ta c mt di gm 6N trng thi p nhng ch c 2N trng thi p b chim ch.
Ta rng, gia hai di nng lng m in t chim-c c mt di cm. in
t khng th c nng lng nm trong di cm, khong cch (di cm) cng thu hp khi
khong cch d cng nh (xem hnh). Khi khong cch d=d
3
, cc di nng lng chng
ln nhau, 6N trng thi ca di trn ho vi 2N trng thi ca di di cho ta 8N trng
thi, nhng ch c 4N trng thi b chim. khong cch ny, mi nguyn t c 4 in t
tng ngoi nhng ta khng th phn bit c in t no l in t s v in t no l
in t p, khong cch t , tc dng ca cc nguyn t ln nhau rt mnh. S phn
b cc di nng lng tu thuc vo dng tinh th v nguyn t s. Ngi ta xc nh s
phn b ny bng cch gii phng trnh Schrodinger v c kt qu nh hnh v. Ta c
mt di ho tr (valence band) gm 4N trng thi hon ton b chim v mt di dn in
(conduction band) gm 4N trng thi cha b chim. Gia hai di nng lng ny, c mt
di nng lng cm c nng lng khong 6eV. (eV: ElectronVolt)
1 volt l hiu in th gia hai im ca mt mch in khi nng lng cung cp l
1 Joule chuyn mt in tch 1 Coloumb t im ny n im kia.
Vy,
Joule
Coloumb
Q
W
V volt

=
Vy nng lng m mt in t tip nhn khi vt mt hiu in th 1 volt l:
Q
W
V =
19 -
10 . 602 , 1
W
V 1 =
Joule 10 . 602 , 1 W
19
=
Nng lng ny c gi l 1eV (1eV=1,602.10
-19
J)
Ta kho st trng hp c bit ca tinh th Cacbon. Nu ta kho st mt tinh th
bt k, nng lng ca in t cng c chia thnh tng di. Di nng lng cao nht b
chim gi l di ha tr, di nng lng thp nht cha b chim gi l di dn in. Ta
c bit ch n hai di nng lng ny.

E Nng lng

Di dn in (Di nng lng
thp nht cha b chim)
E
G
Di cm
Di ho tr (Di nng lng
cao nht b chim)

Hnh 5

* Ta c 3 trng hp:
Di cm c cao kh ln (E
G
>5eV). y l trng hp ca cc cht cch in. Th
d nh kim cng c E
G
=7eV, S
i
O
2
E
G
=9eV.
Di cm c cao nh (E
G
<5eV). y l trng hp cht bn dn in.
Th d: Germanium c E
G
=0,75eV
Silicium c E
G
=1,12eV
Galium Arsenic c E
G
=1,4eV
Di ha tr v di dn in chng ln nhau, y l trng hp ca cht dn in. Th
d nh ng, nhm

E (Nng lng)
Di dn in

E
G
>5eV Di cm Di dn in

E
G
<5eV
Di ho tr Di ho tr

(a) (b) (c)
Cht cch in Cht bn dn Cht dn in

Hnh 6
Gi s ta tng nhit ca tinh th, nh s cung cp nhit nng, in t trong di
ha tr tng nng lng. Trong trng hp (a), v E
G
ln, in t khng nng lng
vt di cm vo di dn in. Nu ta cho tc dng mt in trng vo tinh th, v tt
c cc trng thi trong di ha tr iu b chim nn in t ch c th di chuyn bng
cch i ch cho nhau. Do , s in t i, v mt chiu bng vi s in t i, v theo
chiu ngc li, dng in trung bnh trit tiu. Ta c cht cch in.
Trong trng hp (b), mt s in t c nng lng s vt di cm vo di dn
in. Di tc dng ca in trng, cc in t ny c th thay i nng lng d dng
v trong di dn in c nhiu mc nng lng trng tip nhn chng. Vy in t c
nng lng trong di dn in c th di chuyn theo mt chiu duy nht di tc dng
ca in trng, ta c cht bn dn in.
Trong trng hp (c) cng ging nh trng hp (b) nhng s in t trong di dn
in nhiu hn lm cho s di chuyn mnh hn, ta c kim loi hay cht dn in.
Chng II
S DN IN TRONG KIM LOI
Ni dung chnh ca chng ny l n li khi nim v linh ng ca in t, dn
sut ca kim loi, t a ra phng php kho st chuyn ng ca ht t bng nng
lng. Mc tiu cn t c l hiu r th nng ca in t trong kim loi, s phn b
in t theo nng lng, cng ra ca kim loi v tip th.
I. LINH NG V DN XUT:
Trong chng I, hnh nh ca di nng lng trong kim loi c trnh by.
Theo s kho st trn, di nng lng do in t chim c th cha y v khng c di
cm cho nhng nng lng cao. Ngha l in t c th di chuyn t do trong kim loi
di tc dng ca in trng.
Na

Hnh 1
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+

E

Hnh trn v phn b in tch trong tinh th Na. Nhng ch gch cho tiu biu cho
nhng in t di ha tr c nng lng thp nht, nhng ch trng cha nhng in t
c nng lng cao nm trong di dn in. Chnh nhng in t ny l nhng in t
khng th ni thuc hn vo mt nguyn t nht nh no v c th di chuyn t do t
nguyn t ny sang nguyn t khc. Vy kim loi c coi l ni cc ion kt hp cht
ch vi nhau v xp u n trong 3 chiu trong mt m my in t m trong in
t c th di chuyn t do.
Hnh nh ny l s m t kim loi trong cht kh in t. Theo thuyt cht kh in
t kim loi, in t chuyn ng lin tc vi chiu chuyn ng bin i mi ln va
chm vi ion dng nng, c xem nh ng yn. Khong cch trung bnh gia hai ln
va chm c gi l on ng t do trung bnh. V y l chuyn ng tn lon, nn
mt thi im no , s in t trung bnh qua mt n v din tch theo bt c chiu
no s bng s in t qua n v din tch y theo chiu ngc li. Nh vy , dng in
trung bnh trit tiu.
Gi s, mt in trng E c thit lp trong mng tinh th kim loi, ta th kho
st chuyn ng ca mt in t trong t trng ny.

e
n
e
1
e
2

x

Hnh 2

Hnh trn m t chuyn ng ca in t di tcdng ca in trng E . Qu o
ca in t l mt ng gp khc v in t chm vo cc ion dng v i hng
chuyn ng. Trong thi gian t=n ln thi gian t do trung bnh, in t di chuyn c
mt on ng l x. Vn tc
t
x
v = gi l vn tc trung bnh. Vn tc ny t l vi in
trng E . E v =
Hng s t l gi l linh ng ca in t, tnh bng m
2
/Vsec.
in tch i qua mi n v din tch trong mt n v thi gian c gi l mt dng
in J.
Ta c: J = n.e.v
Trong , n: mt in t, e: in tch ca mt electron
By gi, ta xt mt in tch vi cp S t thng gc vi chiu di chuyn ca in t.
Nhng in t ti mt S thi im t=0 (t=0 c chn lm thi im gc) l nhng
in t trn mt S cch S mt khong v (vn tc trung bnh ca in t) thi im
t=-1. thi im t=+1, nhng in t i qua mt S chnh l nhng in t cha trong
hnh tr gii hn bi mt S v S. in tch ca s in t ny l q=n.e.v.s, vi n l mt
in t di chuyn. Vy in tch i ngang qua mt n v din tch trong mt n v
thi gian l: J=n.e.v
t = -1 t = 0

S S

v
Hnh 3
Nhng nn E v = E . . e . n J =
Ngi ta t = . e . n (c l Sigma)
Nn E J = gi l dn xut ca kim loi
V
=
1
gi l in tr sut ca kim loi
in tr sut tnh bng m v dn sut tnh bng mho/m
II. PHNG PHP KHO ST CHUYN NG CA
HT T BNG NNG LNG:

K A
5cm
v
0
M(x)
0 E
C
= 2eV -
10V
+

Hnh 4

Phng php kho st ny cn c trn nh lut bo ton lng. d hiu, ta xt
th d sau y:
Mt diode l tng gm hai mt phng song song bng kim loi cch nhau 5 Cm.
Anod A c hiu in th l 10V so vi Catod K. Mt in t ri Catod K vi nng
lng ban u E
c
=2eV. Tnh khong cch ti a m in t c th ri Catod.
Gi s, in t di chuyn ti im M c honh l x. in th ti im M s t l
vi honh x v in trng gia Anod v Catod u.
in th ti mt im c honh x l:
+ = x V
Khi x=0, (ti Catod)
0 0 V = =

Nn x V =
Ti x=5 Cm (ti Anod A) th V=-10volt 2 =
Vy V=-2x (volt) vi x tnh bng Cm
Suy ra th nng ti im M l:
(Joule) x . e . 2 QV U + = = vi e l in tch ca in t.
Ta c th vit (eV) x . 2 U =
Nng lng ton phn ti im M l:
U mv
2
1
T
2
+ =
Nng lng ny khng thay i. Trn th, T c biu din bng ng thng
song song vi trc x.
Hiu
2
mv
2
1
U T = l ng nng ca in t. ng nng ny ti a ti im O
(Catod) ri gim dn v trit tiu ti im P c honh x
0
. Ngha l ti im x
0
, in t
dng li v di chuyn tr v catod K. Vy x
0
l khong cch ti a m in t c th ri
xa Catod.
eV (Nng lng)

P

T

2
0
v . m
2
1

0 x
0
= 1cm 5 cm x (cm)
Hnh 5

Ti im M (x=x
0
) ta c:
T-U=0
M T=+E
c
(nng lng ban u)
T=2.e.V
Vy, U=2.x
0
(eV)
=> 2-2.x
0
=0 => x
0
=1Cm
V phng din nng lng, ta c th ni rng vi nng lng ton phn c sn T,
in t khng th vt qua ro th nng U vo phn c gch cho.
Ta thy rng nu bit nng lng ton phn ca ht in v s phn b th nng
trong mi trng ht in, ta c th xc nh c ng di chuyn ca ht in.
Phn sau y, ta p dng phng php trn kho st s chuyn ng ca in t
trong kim loi.
III. TH NNG TRONG KIM LOI:
Nu ta c mt nguyn t duy nht th in th ti mt im cch mt khong r
l:
C
r
k
V + =
Nu chn in th ti mt im rt xa lm in th Zero th C=0. Vy mt in t
c in tch e cch nhn mt on r s c th nng l:
r
ke
eV U = =
-e U -e
r

0 r

Hnh 6

Hnh trn l th ca th nng U theo khong cch r. Phn th khng lin tc
ng vi mt in t bn tri nhn . Nu ta c hai nhn v th trong vng gia hai
nhn ny th nng ca in t l tng cc th nng do v to ra. Trong kim loi, cc
nhn c sp xp u n theo 3 chiu. Vy, ta c th kho st s phn b ca th nng
bng cch xt s phn b dc theo di , v ...


Hnh trn biu din s phn b .
U in t t do
0

E
B

U
0

in t buc

V
0
= 0 E
B

Hnh 7

+

Ta thy rng c nhng vng ng th rng nm xen k vi nhng vng in th
thay i rt nhanh. Mt ngoi ca mi kim loi khng c xc nh hon ton v cch
nhn cui cng mt khong cch nh. V bn phi ca nhn khng cn nhn nn th
nng tin ti Zero ch khng gi tnh tun hon nh bn trong kim loi. Do , ta c mt
ro th nng ti mt ngoi ca kim loi.
Ta xt mt in t ca nhn v c nng lng nh hn U
0
, in t ny ch c th
di chuyn trong mt vng nh cnh nhn gia hai ro th nng tng ng. l in t
buc v khng tham gia vo s dn in ca kim loi. Tri li, mt in t c nng lng
ln hn U
0
c th di chuyn t nguyn t ny qua nguyn t khc trong khi kim loi
nhng khng th vt ra ngoi khi kim loi c v khi n mt phn cch, in t
ng vo ro th nng. Cc in t c nng lng ln hn U
0
c gi l cc in t t
do. Trong cc chng sau, ta t bit ch n cc in t ny.
V hu ht khi kim loi u c cng in th V
0
tng ng vi th nng U
0
=-eV
0

nn ta c th gi s khi kim loi l mt khi ng th V
0
. Nhng in th ty thuc vo
mt hng s cng nn ta c th chn V
0
lm in th gc (V
0
=0V). Gi E
B
l chiu cao
ca ro th nng gia bn trong v bn ngoi kim loi. Mt in t bn trong khi kim
loi mun vt ra ngoi phi c t nht mt nng lng U=E
B
, v vy ta cn phi bit s
phn b ca in t theo nng lng.

III. S PHN B CA IN T THEO NNG LNG:
Gi n
E
= l s in t trong mt n v th tch c nng lng t E n E+E.
Theo nh ngha, mt in t trung bnh c nng lng t E n E+E l t s
E
n
E
.
Gii hn ca t s ny khi gi l mt in t c nng lng E. 0 E
Ta c: (1)
dE
dn
E
n
lim ) E (
E E
0 E
=
=

Vy, (2) dE ). E ( dn
E
=
Do , nu ta bit c hm s ) E ( ta c th suy ra c s in t c nng lng
trong khong t E n E+dE bng biu thc (2). Ta thy rng (E) chnh l s trng thi
nng lng E b in t chim. Nu gi n(E) l s trng thi nng lng c nng
lng E m in t c th chim c. Ngi ta chng minh c rng: t s
) E ( n
) E (
bng
mt hm s f(E), c dng:
KT
E E
F
e 1
1
) E ( n
) E (
) E ( f

+
=
=
Trong , K=1,381.10
-23
J/
0
K (hng s Boltzman)
K) (V/ 10 . 62 , 8
e
10 . 381 , 1
K
0 5
23
= =
E
F
nng lng Fermi, ty thuc vo bn cht kim loi.
Mc nng lng ny nm trong di cm.
nhit rt thp (T0
0
K)
Nu E<E
F
, ta c f(E)=1
Nu E>E
F
, ta c f(E)=0
Vy f(E) chnh l xc sut tm thy in t c nng lng E nhit T.
Hnh sau y l th ca f(E) theo E khi T0
0
K v khi T=2.500
0
K.

Trang 1 Bin so 8 n: Trng Vn Tm
f(E) 1 T=0
0
K

T=2500
0
K
E
F
E
Hnh 8
+
(E)
T=0
0
K

T=2500
0
K
E
F
E


Ta chp nhn rng:
2
E . ) E ( N =
1
l hng s t l.
Lc , mt in t c nng lng E l:
) E ( f .
2
1
E . ) E ( N ). E ( f ) E ( = =
Hnh trn l th ca (E) theo E tng ng vi nhit T=0
0
K v T=2.500
0
K.
Ta thy rng hm (E) bin i rt t theo nhit v ch bin i trong vng cn
ca nng lng E
F
. Do , nhit cao (T=2.500
0
K) c mt s rt t in t c nng
lng ln hn E
F
, hu ht cc in t u c nng lng nh hn E
F
. Din tch gii hn
bi ng biu din ca (E) v trc E cho ta s in t t do n cha trong mt n v
th tch.

= = =
F F
E
0
2
3
F
2
1 E
0
E .
3
2
dE . E . dE ). E ( n
( l f(E)=1 v T=0
0
K)
T y ta suy ra nng lng Fermi E
F
3
2
F
n
.
2
3
E

=
Nu ta dng n v th tch l m
3
v n v nng lng l eV th c tr s l:
= 6,8.10
27
Do ,
3
2
19
F
n . 10 . 64 , 3 E

=
Nu bit c khi lng ring ca kim loi v s in t t do m mi nguyn t
c th nh ra, ta tnh c n v t suy ra E
F
. Thng thng E
F
< 10eV.
Th d, khi lng ring ca Tungsten l d = 18,8g/cm
3
, nguyn t khi l A = 184,
bit rng mi nguyn t cho v = 2 in t t do. Tnh nng lng Fermi.
Gii: Khi lng mi cm
3
l d, vy trong mt cm
3
ta c mt s nguyn t khi l
d/A. Vy trong mi cm
3
, ta c s nguyn t thc l:
0
A .
A
d
vi A
0
l s Avogadro (A
0
= 6,023.10
23
)
Mi nguyn t cho v = 2 in t t do, do s in t t do trong mi m
3
l:
6
0
10 . v . A .
A
d
n =
Vi Tungsten, ta c:
10 . 23 , 1 10 . 2 . 10 . 203 , 6 .
184
8 , 18
n
29 6 23
= in t/m
3
( )
3
2
29 19
F
10 . 23 , 1 . 10 . 64 , 3 E

=
eV 95 , 8 E
F

IV. CNG RA (HM CNG):
Ta thy rng nhit thp (T #0
0
K), nng lng ti a ca in t l E
F

(E<E
F
<E
B
), do , khng c in t no c nng lng ln hn ro th nng E
B
, ngha l
khng c in t no c th vt ra ngoi khi kim loi. Mun cho in t c th vt ra
ngoi, ta phi cung cp cho in t nhanh nht mt nng lng l:
EW = EB-EF
EW c gi l cng ra ca kim loi.

E 2500
0
K U
E
B
E
W
E
F
E
F
E
B

0
0
K
0 (E) 0
Hnh 9

Nu ta nung nng khi kim loi ti nhit T=2.500
0
K, s c mt s in t c
nng lng ln hn E
B
, cc in t ny c th vt c ra ngoi kim loi. Ngi ta
chng minh c rng, s in t vt qua mi n v din tch trong mt n v thi
gian l:
KT
E
2
0 th
w
e T A J

= Trong , A
0
= 6,023.10
23
v K = 1,38.10
-23
J/
0
K
y l phng trnh Dushman-Richardson.
Ngi ta dng phng trnh ny o E
W
v ta c th o c dng in J
th
; dng
in ny chnh l dng in bo ha trong mt n hai cc chn khng c tim lm bng
kim loi mun kho st.
V. IN TH TIP XC (TIP TH):
Xt mt ni C gia hai kim loi I v II. Nu ta dng mt Volt k nhy o hiu
in th gia hai u ca ni (A v B), ta thy hiu s in th ny khng trit tiu, theo
nh ngha, hiu in th ny gi l tip th. Ta gii thch tip th nh sau:

A B I II

I II A B

V V

Hnh 10
i
E

E
W1
E
W2
E
w1
< E
w2
A
> V
B
+ -

+
+
+
+
+
+
+
+
+
+
+
+
+
+
-
-
-
-
-
-
-
-
-
-
-
-
-
-

Gi s kim loi I c cng ra E
W1
nh hn cng ra E
W2
ca kim loi II. Khi ta ni hai
kim loi vi nhau, in t s di chuyn t (I) sang (II) lm cho c s t tp in t bn
(II) v c s xut hin cc Ion dng bn (I). Cch phn b in tch nh trn to ra mt
in trng E
i
hng t (I) sang (II) lm ngn tr s di chuyn ca in t. Khi E
i

mnh, cc in t khng di chuyn na, ta c s cn bng nhit ng hc ca h thng
hai kim loi ni vi nhau. S hin hu ca in trng E
i
chng t c mt hiu in th
gia hai kim loi.
Chng III
CHT BN DN IN
(SEMICONDUCTOR)
Trong chng ny ni dung chnh l tm hiu k cu trc v c im ca cht bn
dn in, cht bn dn loi N, cht bn dn loi P v cht bn dn tng hp. Kho st nh
hng ca nhit ln cht bn dn, t hiu c c ch dn in trong cht bn dn.
y l vt liu c bn dng trong cng ngh ch to linh kin in t, sinh vin cn nm
vng c th hc tt cc chng sau.
I. CHT BN DN IN THUN HAY NI BM:
(Pure semiconductor or intrinsic semiconductor)
Hu ht cc cht bn dn u c cc nguyn t sp xp theo cu to tinh th. Hai
cht bn dn c dng nhiu nht trong k thut ch to linh kin in t l Silicium v
Germanium. Mi nguyn t ca hai cht ny u c 4 in t ngoi cng kt hp vi 4
in t ca 4 nguyn t k cn to thnh 4 lin kt ha tr. V vy tinh th Ge v Si
nhit thp l cc cht cch in.

in t trong
di ha tr

Ni ha tr

Hnh 1: Tinh th cht bn dn nhit thp (T = 0
0
K)

Nu ta tng nhit tinh th, nhit nng s lm tng nng lng mt s in t v
lm gy mt s ni ha tr. Cc in t cc ni b gy ri xa nhau v c th di chuyn
d dng trong mng tinh th di tc dng ca in trng. Ti cc ni ha tr b gy ta
c cc l trng (hole). V phng din nng lng, ta c th ni rng nhit nng lm tng
nng lng cc in t trong di ha tr.


in t t do trong
di dn in

Ni ha tr
b gy.
L trng trong
di ha tr

Hnh 2: Tinh th cht bn dn nhit cao (T = 300
0
K)

Khi nng lng ny ln hn nng lng ca di cm (0,7eV i vi Ge v 1,12eV
i vi Si), in t c th vt di cm vo di dn in v cha li nhng l trng (trng
thi nng lng trng) trong di ha tr). Ta nhn thy s in t trong di dn in bng
s l trng trong di ha tr.
Nu ta gi n l mt in t c nng lng trong di dn in v p l mt l
trng c nng lng trong di ha tr. Ta c:n=p=n
i
Ngi ta chng minh c rng:
n
i
2
= A
0
.T
3
. exp(-E
G
/KT)
Trong : A
0
: S Avogadro=6,203.10
23
T : Nhit tuyt i ( Kelvin)
K : Hng s Bolzman=8,62.10
-5
eV/
0
K
E
G
: Chiu cao ca di cm.
E

Di dn in in t trong
di dn in
Mc fermi

Di ha tr L trng trong
Di ha tr
nhit thp (0
0
K) nhit cao (300
0
K)
Hnh 3

Ta gi cht bn dn c tnh cht n=p l cht bn dn ni bm hay cht bn dn
thun. Thng thng ngi ta gp nhiu kh khn ch to cht bn dn loi ny.


II. CHT BN DN NGOI LAI HAY C CHT PHA:
(Doped/Extrinsic Semiconductor)
1. Cht bn dn loi N: (N - type semiconductor)
Gi s ta pha vo Si thun nhng nguyn t thuc nhm V ca bng phn loi tun
hon nh As (Arsenic), Photpho (p), Antimony (Sb). Bn knh nguyn t ca As gn
bng bn knh nguyn t ca Si nn c th thay th mt nguyn t Si trong mng tinh th.
Bn in t ca As kt hp vi 4 in t ca Si ln cn to thnh 4 ni ha tr, Cn d li
mt in t ca As. nhit thp, tt c cc in t ca cc ni ha tr u c nng
lng trong di ha tr, tr nhng in t tha ca As khng to ni ha tr c nng
lng E
D
nm trong di cm v cch dy dn in mt khang nng lng nh chng
0,05eV.

trong di cm
0,05eV

in t tha ca As

Hnh 4: Tinh th cht bn dn nhit cao (T = 300

Gi s ta tng nhit ca tinh th, mt s ni ha tr b gy, ta c nhng l trng
trong di ha tr v nhng in t trong di dn in ging nh trong trng hp ca cc
cht bn dn thun. Ngoi ra, cc in t ca As c nng lng E
D
cng nhn nhit nng
tr thnh nhng in t c nng lng trong di dn in. V th ta c th coi nh hu
ht cc nguyn t As u b Ion ha (v khang nng lng gia E
D
v di dn in rt
nh), ngha l tt c cc in t lc u c nng lng E
D
u c tng nng lng
tr thnh in t t do.


in t tha ca As E

1,12eV Mc fermi tng

0
K) nhit T = 0
0
K
Si Si Si
Si As Si
Si Si Si
Di ha tr
E Di dn in

Di ha tr

Hnh 5

Di dn in

Nu ta gi N
D
l mt nhng nguyn t As pha vo (cn gi l nhng nguyn t
cho donor atom).
Ta c: n = p + N
D
Vi n: mt in t trong di dn in.
P: mt l trng trong di ha tr.
Ngi ta cng chng minh c: n.p = n
i
2
(n<p)
n
i
: mt in t hoc l trng trong cht bn dn thun trc khi pha.
Cht bn dn nh trn c s in t trong di dn in nhiu hn s l trng trong
di ha tr gi l cht bn dn loi N.
2. Cht bn dn loi P:
Thay v pha vo Si thun mt nguyn t thuc nhm V, ta pha vo nhng nguyn t
thuc nhm III nh Indium (In), Galium (Ga), nhm (Al),... Bn knh nguyn t In gn
bng bn knh nguyn t Si nn n c th thay th mt nguyn t Si trong mng tinh th.
Ba in t ca nguyn t In kt hp vi ba in t ca ba nguyn t Si k cn to thnh 3
ni ha tr, cn mt in t ca Si c nng lng trong di ha tr khng to mt ni vi
Indium. Gia In v Si ny ta c mt trang thi nng lng trng c nng lng E
A
nm
trong di cm v cch di ha tr mt khong nng lng nh chng 0,08eV.

L trng
Ni ha tr
khng c
thnh lp

Hnh 6

0
Si Si Si
Si In
Si Si Si

nhit thp (T=0
0
K), tt c cc in t u c nng lng trong di ha tr. Nu
ta tng nhit ca tinh th s c mt s in t trong di ha tr nhn nng lng v
vt di cm vo di dn in, ng thi cng c nhng in t vt di cm ln chim
ch nhng l trng c nng lng E
A
.
E
Di dn in
1 12eV


Nu ta gi N
A
l mt nhng nguyn t In pha vo (cn c gi l nguyn t
nhn), ta cng c:
p = n + N
A
p: mt l trng trong di ha tr.
n: mt in t trong di dn in.
Ngi ta cng chng minh c:
n.p = n
i
2
(p>n)
n
i
l mt in t hoc l trng trong cht bn dn thun trc khi pha.
Cht bn dn nh trn c s l trng trong di ha tr nhiu hn s in t trong di
dn in c gi l cht bn dn loi P.
Nh vy, trong cht bn dn loi p, ht ti in a s l l trng v ht ti in thiu
s l in t.
3. Cht bn dn hn hp:
Ta cng c th pha vo Si thun nhng nguyn t cho v nhng nguyn t nhn
c cht bn dn hn hp. Hnh sau l s nng lng ca cht bn dn hn hp.

Di dn in
E
D
N
D
E
D
E
A
N
A
E
A

Di ha tr
nhit thp nhit cao
(T = 0
0
K) (T = 300
0
K)
Hnh 8


Trong trng hp cht bn dn hn hp, ta c:
n+N
A
= p+N
D
n.p = n
i
2
Nu N
D
> N
A
=> n>p, ta c cht bn dn hn hp loi N.
Nu N
D
< N
A
=> n<p, ta c cht bn dn hn hp loi P.
III. DN SUT CA CHT BN DN:
Di tc dng ca in trung, nhng in t c nng lng trong di dn in di
chuyn to nn dng in In, nhng cng c nhng in t di chuyn t mt ni ha tr
b gy n chim ch trng ca mt ni ha tr b gy. Nhng in t ny cng to ra
mt dng in tng ng vi dng in do l trng mang in tch dng di chuyn
ngc chiu, ta gi dng in ny l Ip. Hnh sau y m t s di chuyn ca in t (hay
l trng) trong di ha tr nhit cao.

L trng in t trong di ha tr di chuyn v
bn tri to l
trng mi

Ni ha tr b gy
Hnh 9

L trng mi

trng mi


L

Ni ha tr mi b gy
Hnh 10

Vy ta c th coi nh dng in trong cht bn dn l s hp thnh ca dng in
do nhng in t trong di dn in (a s i vi cht bn dn loi N v thiu s i vi
cht bn dn loi P) v nhng l trng trong di ha tr (a s i vi cht bn dn loi P
v thiu s i vi cht bn dn loi N).

Dng in t trong Dng in t trong
di dn in di dn in
Cht bn dn thun

Dng in t Dng l trng
trong di ha tr

+ - + -
V V
Hnh 11

Tng ng vi nhng dng in ny, ta c nhng mt dng in J, Jn, Jp sao
cho: J = Jn+Jp
Ta chng minh c trong kim loi:
J = n.e.v = n.e..E
Tng t, trong cht bn dn, ta cng c:
Jn=n.e.v
n
=n.e.
n
.E (Mt dng in tri ca in t,
n
l linh ng ca in t,
n l mt in t trong di dn in)
Jp=p.e.v
p
=p.e.
p
.E (Mt dng in tri ca l trng,
p
l linh ng ca l
trng, p l mt l trng trong di ha tr)
Nh vy: J=e.(n.
n
+p.
p
).E
Theo nh lut Ohm, ta c:
J = .E
=> = e.(n.
n
+p.
p)
c gi l dn sut ca cht bn dn.
Trong cht bn dn loi N, ta c n>>p nn
n
= n.
n
.e
Trong cht bn dn loi P, ta c p>>n nn
p
= n.
p
.e
IV. C CH DN IN TRONG CHT BN DN:
Di tc dng ca in trng, cc in t v l trng di chuyn vi vn tc trung
bnh v
n
=
n
.E v v
p
=
p
.E.
S in t v l trng di chuyn thay i theo mi thi im, v ti mi thi im c
mt s in t v l trng c sinh ra di tc dng ca nhit nng. S in t sinh ra
trong mi n v thi gian gi l tc sinh to g. Nhng in t ny c i sng trung
bnh
n
v trong khi di chuyn in t c th gp mt l trng c cng nng lng v ti
hp vi l trng ny. Nu gi n l mt in t, trong mt n v thi gian s in t b
mt i v s ti hp l n/
n
. Ngoi ra, trong cht bn dn, s phn b ca mt in t
v l trng c th khng u, do c s khuch tn ca in t t vng c nhiu in t
sang vng c t in t.
Xt mt mu bn dn khng u c mt in t c phn b nh hnh v. Ti
mt im M trn tit din A, s in t i ngang qua tit din ny (do s khuch tn) t l
vi dn/dx, vi din tch ca in t v vi tit din A.

M vkt

x
Hnh 12

Dng in khuch tn ca in t i qua A l:
0 A
dx
dn
. e . D In
n kt
< =

D
n
c gi l hng s khuch tn ca in t.
Suy ra mt dng in khuch tn ca in t l:
dx
dn
. D . e Jn
n kt
=
Tng t, trong mt giy c
p
p
l trng b mt i, vi p l mt l trng v
p
l l i
sng trung bnh ca l trng.
Dng in khuch tn ca l trng trong mu bn dn trn l:
0 A .
dx
dp
. e . D Ip
p kt
> =
V mt dng in khuch tn ca l trng l:
dx
dp
. D . e Jp
p kt
=
Ngi ta chng minh c rng:
600 . 11
T
V
e
KT D
D
T
n
n
p
p
= = =

Vi: K l hng s Boltzman = 1,382.10-23J/0K
T l nhit tuyt i.
H thc ny c gi l h thc Einstein.
nhit bnh thng (300
0
K): V
T
=0,026V=26mV
V. PHNG TRNH LIN TC:
Xt mt hnh hp c tit din A, chiu di dx t trong mt mu bn dn c dng
in l trng Ip i qua. Ti mt im c honh x, cng dng in l Ip. Ti mt
c honh l x+dx, cng dng in l Ip+dIp. Gi P l mt l trng trong hnh
hp,
p
l i sng trung bnh ca l trng. Trong mi giy c
p
p
l trng b mt i do s
ti hp. Vy mi giy, in tch bn trong hp gim i mt lng l:
p
1
p
. dx . A . e G
= (do ti hp)
ng thi in tch trong hp cng mt i mt lng:
G
2
=dIp (do khuch tn).

Gi g l mt l trng c sinh ra do tc dng nhit, trong mi giy, in tch trong hp
tng ln mt lng l:
dx

A
Ip Ip+dIp
x+dx
x x
Ip
Hnh 13
T
1
=e.A.dx.g
Vy in tch trong hp bin thin mt lng l:
dIp
p
. dx . A . e g . dx . A . e ) G G ( T
p
2 1 1

= +
bin thin bng:
dt
dp
. dx . A . e
Vy ta c phng trnh:
A . e
1
.
dx
dIp p
g
dt
dp
p

= (1)
Nu mu bn dn trng thi cn bng nhit v khng c dng in i qua, ta c:
; 0
dt
dp
= dIp=0; P=P
0
=hng s
Phng trnh (1) cho ta:
p p
g g 0
=
Vi P l mt l trng trng thi cn bng nhit. Thay tr s ca g vo phng trnh
0
P p
0
(1) v rng p v I
P
vn ty ian v khong cch x, phng trnh (1) tr thnh: thuc vo thi g
eA
.
x t
p
0

1
I
p p p
p

(2)
Gi l phng trnh lin tc.
n
, ta c: T in t I ng t vi dng
eA
1
.
I n n n
n 0

(3)
x t
n

=
ii ph tr h lin tc trong tr
dng in I
p
l dng in khuch tn c
Ta c:
TD: ta g ng n ng hp p khng ph thuc vo thi gian v
a l trng.
dx
dp
. eA . D I
p
0
dt
dp
= v
p
=
Do ,
2
2
p
dx
p d
. eA . D
dIp
=
dx
Phng trng (2) tr thnh:
p L . D dx
2
p p
2
P P P P p d
2

0 0
= =
Trong , ta t
p p p
. D L =
Nghim h (4) l: s ca phng trn
+
p p
L
x
L
e . A e A
ng nn A
1
= 0
Do :

P-P
0
P(x
0
)-P
0
x
Hnh 14
P-P
0

P(x
0
)-P
0

x
0
x
Hnh 15

x
0

=
1 0
. P P
2
V mt l trng khng th tng khi x t
=
p
L
x
2 0
e . A P P ti x = x
0.
Mt l trng l p(x
0
),
Do :
=
p
L
x
2 0 0
e . A P ) x ( P
Suy ra, nghim ca phng trnh (4) l:
[ ]

=
p
0
L
x x
0 0 0
e . P ) x ( P P ) x ( P
Chng IV
NI P-N V DIODE
(THE P-N JUNCTION AND DIODES)
Ni P-N l cu trc c bn ca linh kin in t v l cu trc c bn ca cc loi
Diode. Phn ny cung cp cho sinh vin kin thc tng i y v c ch hot ng
ca mt ni P-N khi hnh thnh v khi c phn cc. Kho st vic thit lp cng thc
lin quan gia dng in v hiu in th ngang qua mt ni P-N khi c phn cc. Tm
hiu v nh hng ca nhit ln hot ng ca mt ni P-N cng nh s hnh thnh
cc in dung ca mi ni. Sinh vin cn hiu thu o ni P-N trc khi hc cc linh
kin in t c th. Phn sau ca chng ny trnh by c im ca mt s Diode thng
dng, trong , diode chnh lu v diode zenner c ch trng nhiu hn do tnh ph
bin ca chng.
I. CU TO CA NI P-N:
Hnh sau y m t mt ni P-N phng ch to bng k thut Epitaxi.

SiO
2
(Lp cch in)
(1) (2)
Si-n+ Si-n+
(Thn)
SiO
2
Lp SiO
2
SiO
2
b ra mt Anod Kim loi SiO
2

(3) (4)
P
Si-n+ Si-n+

Catod Kim loi
Hnh 1
Trc tin, ngi ta dng mt thn Si-n+ (ngha l pha kh nhiu nguyn t cho).
Trn thn ny, ngi ta ph mt lp cch in SiO
2
v mt lp verni nhy sng. Xong
ngi ta t ln lp verni mt mt n c l trng ri dng mt bc x chiu ln mt
n, vng verni b chiu c th ra c bng mt loi axid v cha ra mt phn Si-n+,
phn cn livn c ph verni. Xuyn qua phn khng ph verni, ngi ta cho khuch
tn nhng nguyn t nhn vo thn Si-n+ bin mt vng ca thn ny thnh Si-p. Sau
cng, ngi ta ph kim loi ln cc vng p v n+ v hn dy ni ra ngoi. Ta c mt
ni P-N c mt ni gia vng p v n+ thng.
Khi ni PN c thnh lp, cc l trng trong vng P khuch tn sang vng N v
ngc li, cc in t trong vng N khuch tn sang vng P. Trong khi di chuyn, cc
in t v l trng c th ti hp vi nhau. Do , c s xut hin ca mt vng hai
bn mi ni trong ch c nhng ion m ca nhng nguyn t nhn trong vng P v
nhng ion dng ca nguyn t cho trong vng N. cc ion dng v m ny to ra mt
in trng E
j
chng li s khuch tn ca cc ht in, ngha l in trng Ei s to ra
mt dng in tri ngc chiu vi dng in khuch tn sao cho dng in trung bnh
tng hp trit tiu. Lc , ta c trng thi cn bng nhit. Trn phng din thng k, ta
c th coi vng c nhng ion c nh l vng khng c ht in di chuyn (khng c in
t t do vng N v l trng vng P). Ta gi vng ny l vng khim khuyt hay vng
him (Depletion region). Tng ng vi in trng Ei, ta c mt in th V
0
hai bn
mt ni, V
0
c gi l ro in th.

P N
V
0
- +

x
1
E
i
x
2

V
0
= Ro in th
Ti mi ni
x
1
0 x
2
Hnh 2
-
-
-
+
+
+
+
+
-
-
-
-
+
+

Tnh V
0
: ta n dng in khuch tn ca l trng:
0
dx
. D . e J
p pkt
> =
dp
v dng in tri c trng:
, ta c:
a l
0 E . . p . e J
i p ptr
< =
Khi cn bng
J
pkt
+J
ptr
= 0
Hay l:
i p p
E . . p . e
dx
dp
. D . e =
dx . E
p
dp
.
D
p
i
p
=

e
KT
V
D
T
M
p
p
= =
V
dx
dV
E
i

=
Do :
p
dp
. V dV
T
=
Ly tch phn 2 v x
1
n x
2
v rng ti x
1
in th c chn l 0volt, mt
l g mt P
po
vng P lc cn bng. Ti x
2
, in th l V
0
v mt l trng
l P
no
n N lc cn bng.
t
trn l
v g

=
o
n
o
P
0
V
P
P
T
p
dp
V dV
0
M:
A P
D
i
n
N P v
N
P
o o

2
n
Nn:
=
o
o
n
P
T 0
P
P
log V V
Hoc:
2
i
0
n e

=
A D
N N
log
KT
V
Tng t nh trn, ta cng c th tm V
0
t dng in khuch tn ca in t v
dng in tri ca in t.
0 . . . . = +
i n n
E n e
dx
D e
Thn
volt 7 , 0 V
dn
g thng nu ni P-N l Si
volt nu ni P-N l Ge
Vi cc hp cht ca Gallium nh GaAs (Gallium Arsenide), GaP (Gallium
Phos
II. DNG IN TRONG NI P-N KHI C PHN
cch:
0
3 , 0 V
0

pho), GaAsP (Gallium Arsenide Phospho), V
0
thay i t 1,2 volt n 1,8 volt.
Thng ngi ta ly tr trung bnh l 1,6 volt.
CC:
Ta c th phn cc ni P-N theo hai
- Tc dng mt hiu in th gia hai cc ca ni sao cho in th vng P ln hn
vng N mt tr s V. Trng hp ny ta ni ni P-N c phn cc thun (Forward
Bias).
Nu in th vng N ln hn in th vng P, ta ni ni P-N c phn cc
nghch (Reverse Bias).
1. Ni P-N c phn cc thun:

o ra dng in
I
p
. in t khuch tn t vng N sang vng P to ra dng in I
n
. Dng in I qua ni P-
N l
o thi gian v v tr ca tit din A v ta c mt
trng thi thng xuyn nh in I
n
v I
p
ph thuc vo v tr ca tit din.
Trong vng P xa vng him, l trng tri di tc dng ca in trng to nn
dng c in t t
vng ng vng ny
+ V
0
-
R I
(Gii hn dng
in)
-
- V +
Dng in t

N Vng him P

- V
S
+

V V
P
V
B
J
np
J
nn

N
J
pp
J
nn
V V
0

x
1
x x
1
x
2
x
Hnh 3
Khi cha c phn cc, ngang mi ni ta c mt ro in th V
0
. Khi phn cc
thun bng hiu in th V th ro in th gim mt lng V v tr thnh V
B
= V
0
-V, do
ni P-N mt thng bng. L trng khuch tn t vng P sang vng N t
:
n p
I I I + =
Dng in I khng ph thuc v
ng dng
J
pp
. Khi cc l trng ny n gn vng him, mt s b ti hp vi c
N khuch tn sang. V vng him rt mng v khng c in t nn tro
cc l trng k ng b mt v tip tc khuch tn sang
vng N nhng b mt ln v c s ti hp vi cc in t trong vng ny.
Tng t, s khuch tn ca in t t vng N sang vng P cng tun theo qui ch
trn. Ta l cc th nhn m c i xng v tng s cc dng in l trng v
dng in t phi bng mt hng s
n 1 nn 2

J = J
pp
(x
1
) + J
np
(x
1
) = J
pn
(x
2
) + J
nn
(x
2
)
Dng in J
pn
l dng khuch tn cc l trng, nn c tr s ti tit din x l:
huch tn thng ngang qua m kh
t tr
.
Ta c: J
pp
(x
1
) = J
pn
(x
2
)
J ) = J (x )
p
(x
Dng in J ti mt tit din bt k l hng s. Vy ti x
1
hoc x
2
ta c:
dx
) x ( dP
. D . e ) x ( J =
n
p pn

h P
n
(x) Trong , P
n
(x) l mt l trng trong vng N ti im x. Ta tn
Ta dng phng trnh lin tc:
A . e
1
.
x
I P P
P
n n
n 0
t
p

p

V dng n J
pn
khng ph thuc vo thi gian nn phng trnh tr thnh:

=
i
2
p
n n
2
n
2
L
P P
dx
P d
0
= Trong
p p p
. D L =
[ ]
p
L
x x
n n n n
e P x P P x P
2
0 0
. ) ( ) (
2
= V c nghi l: m s
[ ]
0
2
n 2 n
p
p
x x
n
p 2 pn
P ) x ( P
L
D . e
dx
dP
D . e ) x ( J = =
=
Suy ra,
p
dp
V dv
T
= Ta chp nhn khi c dng in qua m i ni, ta vn c biu thc: nh trong
tr bng.
Ly tch phn hai v t x
1
n x
2
ta c:
ng hp ni cn

=
p p
T
p ) x ( p
p
V dv
) x ( p V
0
2 n
0 1
B
dp
Ta c:
M: V
P
P
log V V V V
0
n

0
p
T 0 B

= =
Suy ra:
=
0
n
2 n
T
P
) x ( P
log V V
V
T
0
V
n 2 n
e . P ) x ( P = Nn:
[ ]
0
n 2 pn
J
p
p 2
P ) x ( P
L
1
. D . e ) x ( = Do :

D
V
L
0
p
= 1 e . P . . e ) x ( J
T
V
n
p
2 pn
Tng t, ta c:

[ ]
0
p 1 p
n
n 1 np
n ) x ( n
L
1
. D . e ) x ( J =
= 1 e n .
L
D
. e ) x ( J
T
0
V
V
p
n
n
1 np

Suy ra, mt dng in J trong mi ni P-N l:
) x ( J ) x ( J J
1 np 2 pn
+ =
+ = 1 e . n .
D
p .
D
e J
T
V
V
po
n
no
P

L L
n P
Nh vy, dng in qua mi ni P-N l:
+ =
D
p .
D
e . A I
no
P
1 e . n .
L L
T
V
V
po
n

n P
t:
D D
=
P
P
0
.
L
. e . A I
Ta
+
po
n
n
no
n .
L
p
c:
e
0
1
T
V
V

hng trnh ny i l phng trnh Schockley
= I I
P c g
Trong :
n
D
D
kT
n
p
p e
V
T
= =
l hng s Boltzman
V
T
=0,026 volt. Khi mi ni chuyn vn bnh
th i t 0,3 V n 0,7 V ty theo mi l Ge hay Si,
Vi K / J 10 . 381 , 1 k
0 23
=
coulomb 10 . 602 , 1 e = , l in tch ca electron
T l nhit tuyt i.
19
nhit bnh thng, T=273
0
K,
1 e 10
V
V
T
V
V
T
>> > ng, V thay
T
V
V
Vy,
0
Ghi ch: Cng thc trn ch ng trong trng hp dng in qua mi ni kh ln
(vng c tuyn V-I thng, xem phn sau); vi dng in I tng i nh (vi mA tr
xung), ngi ta chng minh c dng in qua mi ni l:
e . I I
=

1 e I I
T
V
V
0

Vi = 1 khi mi ni l Ge
= 2 khi mi ni l Si
2. N c phn cc nghch:
i P-N c phn cc nghch, ro in th tng mt lng V. L trng v in
t khng th khuch tn ngang qua mi ni. Tuy nhin, di tc dng ca nhit, mt s t
in t v l u t vng N
sang t nh, thng chng
vi c
rong trng hp ni P-N phn cc nghch vi hiu
in th V<0, dng
i P-N khi

-
+

Khi n
trng c sinh ra trong vng him to ra mt dng in c chi
vng P. V in t v l trng sinh ra t nn dng in ngc r
hc A hay nh hn. l dng in ngc ny l mt hm s ca nhit .
Ngi ta cng chng minh c t
in qua ni l:
=

1 e I I
T
V
V
0

I
0
cng c tr s:
po
n
no
P
L L
. . .
D D
+ =
n P
n p e A I .
0
Thng thng, 1 e
T
V
<<
nn I # I
V
Th d: Xem mch sau y

0

+
+
+
+
-
-
-
-
Ion dng
Dng electron (khc 0)

P - + N
Ro in th V
B
=V
S
R
V V
B
V
0
- V
S
+

Hnh 4
Ion m

D2
+5V
I
+ V2 - +

V
1

-
Hnh_5
D1

D
1
v D
2
l 2 ni P-N Si. Tm in th V
1
v V
2
xuyn qua ni.
ii: Dng in qua 2 ni P-N l nh nhau. Ch l dng in qua D
2
l dng
thun v dng qua D
1
l dng nghch.
Vy:
G
0
V
V
0
I 1 e I I
T
=
=

vi = 2 v V
T
= 0,026V
2
052 , 0
V
2
= e
2
V ) V ( 036 , 0 052 , 0 . 693 , 0 = =
o , in th ngang qua ni phn cc nghch l:
V
1

l dng bng th
sau c g l c tuyn V-I ca ni P-N.
u th nh, dng in hi hiu th phn cc
thun ln, dng in I tng nhanh trong lc hiu in th hai u mi ni tng rt t.
hi hiu th nh, ch c 1 d chy qua. Khi hiu
in th phn cc nghch ln, nhn in sinh ra di tc dng ca nhit c
in trng trong vng him tng vn nng lng rt nhiu in t khc t
cc ni ha tr. C ch ny c chng cht, sau cng ta c mt dng in ngc rt ln, ta

D
= 5V
2
=5 0,036 = 4,964 (V)
I
0
y,
in bo ha ngc. Dng in trong ni P-N c th din t
i
Khi hi phn cc thun cn I tng chm. K

phn cc nghch cn ng in r I
0
g ht ti
tc v c
K
ni ni P-N trung vng ph hy theo hin tng tuyt (avalanche).


III. NH HNG CA NHIT LN NI P-N:
Thng thng ta thy rng I
0
s tng ln gp i khi nhit mi ni tng ln 10
0
C
I Ge Si

V
0,3V 0,7V
Vi chc A
n c nghch Phn cc thun
P N P N
- V - V>0 +
I<0 I>0
Hnh 6

Si Ge

Ph c
<0 +
1. Dng in bo ha ngc I
0
ty thuc vo nng cht pha, din tch mi ni v
nht l nhit .
10
2 vi t l nhit (
0
0
0
0
25
). 25 ( ) (

=
t
C I C t I
0
C)
nh sau y m t s bin g in bo ha c theo nhit .
hanh c dng bo ha ngc I
0
=25nA 25
0
C.
0
H thin ca dn ng
I
0
-8 -7 -6 -5 -4 -3 -2 -1
0 V

35
0
C
45
0
C
55
0
C

25
0
C

Hnh 7
1
4
5
6
7
8
2
3

Th d: 1N914B l diode Si chuyn mch n
Tm I 100
0
C.
p dng:
10
2
). C 25 ( I ) C t ( I
t
0 0
=
25
0 0

10
2
. nA 25
25 100
=
181 . nA 25 =
1 ( A 525 , 4 ) C 00 I
0
0
=
t c a ni P-N khi phn cc thun cng thay i theo nhit .
t ca ni P-N tng, in th thm a mi n m ( d dn in
hn). Ngi ta th
v gim 2,02mV di
khi nhit tng ln 1
0
C.
2. Tnh ch
Khi nhi c i gi ni
y rng, khi nhit tng ln 1
0
C in th thm gim 1,8mV diode Si
ode Ge. Mt cch tng qut c th coi nh in th thm gim 2mV
C / mV 2
t
V
0 D
=

. hit c ni P-N cng quyt nh in th sp . Nu nhit tng ln n
mt tr no th in th sp s gim xung rt nh v mi ni P-N khng cn s
dng c na. Nhit ny l 150
0
C i vi Si v 85
0
C i vi Ge.
IV. N
i ta thng ch n hai loi ni tr ca ni P-
1. Ni tr tnh: (Static resistance).
Ni tr tnh l in tr ni ca ni P-N trong mch in mt chiu. Ngi ta nh
ngha

I(mA) 45
0
C
35
0
C
25
0
C

0 0,66 0,68 0,7 V

Hnh 8

3 N a

I TR CA NI P-N.
Ng N
in tr mt chiu mt im phn cc l t s V/I im .

I (mA)

0 V V
(Volt)
Hnh 9
P

N
I Q
V
Rs
Vs
I

Ni tr a ni ti im Q l: c
I
V
R
D
=
Khi ni P-N phn c
khng
c thun cng mnh, dng in I cng ln trong lc in th V
gn nh i nn ni tr cng nh.
2. Ni tr ng ca ni P-N: (Dynamic Resistance)
Gi s dng dng in ngang qua ni P-N l I
Q
tng ng vi mt in th phn
cc t

h t lng V t tr s V
Q
th I cng bin thin mt lng tng
ng I t tr s . T s
hun V
Q
.

K i V bin thin m
I
Q

V
I
b
ng vi d ca tip tuyn ti im Q v uyn ca

ni P-N
c i c t
.
t:
d
r
= ;r
1 I
V
gi l in i P-N khi phn n.
tn hiu u nh, ta c:
d
c tr ng ca n cc thu
V i
Q
d
dI
dV
I
V
r =
=
Vi
=

1 e . I I
T
V
V
0

Suy ra:
~
V
I
w
P

N
Rs
Vs
I

I Q
V V
Hnh 10
=
V
V
T
0
e .
V
1
I
dV
dI
T

Ngoi ra,
0
V
0
V
0
I e . I 1 e . I I
T T
=
=

V V

Hay
T
V
V
0 0
e . I I I

= +
Do ,
T
0
V
I I
dV
dI
+
=
V in tr ng l:
0
I I dV +
Thng thng,
0
I I >> nn
T
d
V dI
r

= =
I
V
r
T
d

=
nhit bnh thng (25
0
C), V
T
= 26mV, in tr ng l:
) mA ( I
mV 26 .
r

=
d
Vi dng in I kh l , =1, in tr ng r
d
c th c tnh theo cng thc: n
) mA ( I
nhit bnh thng, nu I
mV 26
r
d
=
h
dn P
h c, thng thng khong vi chc .
ng chnh l kiu mu ca Diode vi tn hiu nh ng
in tr ng khi phn cc nghch
Q
= 100mA th r
d
= 0,26. Trong mt ni P-N t c, v
c tip tr gia cc mi ni, in tr gia hai vng bn v N nn in tr ng
thc s ln hn nhiu so vi tr s tn

in tr ni

y c . Ngi ta c nh ngha

=
in tr in tr vng N = r
b
+r
d
Hnh 11

r
ac
= r
p
+r
n
+r
d
vng P
r
ac
=r
o
r
p
r
n
r
d

Q
r
dI
dV
r =
V dc ca tip tuyn ti Q khi ni P-N phn cc nghch rt nh nn in tr
ng r
r
rt ln, hng M.
V. IN DUNG CA NI P-N.
1. in dung chuyn tip (in dung ni)
Khi ni P-N c phn cc nghch, vng him c ni rng do c s gia tng in
tch trong vng ny. Vi mt s bin thin V ca hiu in th phn cc nghch, in
tch trong vng him tng mt lng Q. Vng him c tc dng nh mt t in gi l
in dung chuyn tip C
T
.
d
T
W
A .
V
Q
C

=
=
Trong , l hng s in mi ca cht bn dn, A l in tch ca ni P-N v W
d

l rng ca vng him.
vng him thay i nn in
dung chuyn tip C
T
cng thay i. Ngi ta chng minh c C
T
c tr s:
Khi in th phn cc nghch thay i, rng ca
( )
n
R 0
T
V V
C
+
=
K
Trong , K l hng s ty thuc vo cht bn dn v k thut ch to. V
0
l ro
in th ca ni P-N (Si l 0,7V v Ge l 0,3V). V
R
l in th phn cc nghch.
3
1
n = trong trng hp ni P-N l dc li (linearly graded juntion) v
2
1
n = trong trng
h c ng (brupt juntion). p ni P-N thuc loi d
Nu gi C
j
(0) l tr s ca C
T
o c khi V
R
=0, ta c:
n
0
R
j
T
V
V
1
) 0 ( C
C
+
=

P - + N
V
R
# V
S

N N

- V
S
+
Ni P-N khi phn cc nghch Dc li Dc ng
Hnh 12
R
L
P P

-
+
+
+
+
+
-
-
-
-

Trong c thng, C
T
c tr s t 5pF n 100pF
2. in dung khuch tn. (Difusion capacitance)
Khi ni P-N c phn cc thun, l c khuch tn t vng P sang vng N
v i n t khuch tn t vng N sang vng P. S phn b cc ht ti in thiu s hai
bn vng him to nn mt in dung gi l in dung khuch tn C
D.
. Ngi ta chng
minh c in dung khuch tn C
D
t l vi dng in qua ni P-N theo cng thc:
c ni P-N thng
trng

T
D
V
I
C
=
rong ,

T
P
P
P
D
= = , l i sng trung bnh ca l trng; = 2 i vi ni P-N l
Si, 1 i vi
hng thng, C
D
c tr s t 2000pF n 15000pF.
VI. CC LOI DIODE THNG DNG
iode c bn l mt ni P-N. Th nhng, ty theo mt cht tp pha vo cht bn
dn thun ban u, ty theo s phn c a diode v mt s yu t h a c
nhiu loi diode khc nhau v tm ng d ca chng cng khc nha
iode chnh lu:
diode thng dng nht, dng i in xoay chiu thng l in th 50Hz
n 60Hz sang in th mt chiu. Diode ny ty loi c th chu ng c dng t vi
trm mA n loi cng sut cao c th chu c n vi trm ampere. Diode chnh lu
ch y u l loi Si. Hai c tnh k thut c bn ca Diode chnh lu l dng thun ti a
v i p ngc ti a (in p sp ). Hai c tnh ny do nh sn xut cho bit.
P
Hnh 13
2
L
= ni P-N l Ge.
T

D
c c
ng
k
u.
c na m t
1. D
L
n
Anod Catod

A

K K hiu
N
P N

Trc khi xem qua mt s s chnh lu thng dng, ta xem qua mt s kiu mu
thng dng ca diode.
al diode)
hng ng k.

Kiu mu mt chiu ca diode. Diode l tng (Ide
Trong trng hp ny, ngi ta xem nh in th ngang qua diode khi phn cc
thun bng khng v ni tr ca n khng ng k. Khi phn cc nghch, dng r cng
xem nh k
Nh vy, diode l tng c xem nh mt ngt (switch): ngt in ng mch khi
diode c phn cc thun v ngt in h mch khi diode c phn cc nghch.
I
D
Diode l tng

0 V
D
Hnh 14

+ -
V
SW
I
SW
I
SW
V
SW
= 0V
+ -
0 V
SW
I
SW
I
SW
= 0
0 V
SW
Hnh 15

+
V
S
-
R

+
V
S
-
R
+
0V
R
V
I
S
D
=
V
D
I
D
0
c tuyn
V-I
-
Phn cc thun

Kiu mu in th ngng (Knee-Voltage model)
Trong kiu mu ny, in th ngang qua diode khi c phn cc thun l mt hng
s v c gi l in th ngng V
K
(khong 0,3V i vi diode Ge v 0,7 volt i vi
diode Si).
Nh vy, khi phn cc thun, diode tng ng vi mt diode l tng ni tip
vi n

Kiu mu diode vi in tr ng:
hi in th phn cc thun vt qu in th ngng V
K
, dng in qua diode tng
nhanh trong lc in th qua hai u diode V cng tng (tuy chm) ch khng phi l
hng hi ch n gim
th q

gun in th V
K
, khi phn cc nghch cng tng ng vi mt ngt in h.

K
D
s nh kiu mu trn. chnh xc hn, lc ny ngi ta p
ua hai u in tr ng r
0
.
+
V
S
R

+
V
S
-
R
+
V
D
= -V
S
-
0 I
D
=
V
D
I
D
0
c tuyn
V-I
Phn cc nghch
Hnh 15
-

I
D
V
D
V
K
+ V
K
-
I
D
V
D

+ V
K
-
0
V
D
<V
K
I
D
= 0
+V -
Hnh 16
+
V
S
-
R
+
V
S
-
R
+
V
K
-

Diode l tng
Hnh 17
R
V V
I
K S
D

=
+
V
S
-
R
+
D
V
K
= V
-

V
S
>V
K

0
iu
hnh Q(I
D
V
D
) khi n c dng trong mch hnh bn.

+ V
D

Th d:
T c tuyn V-I ca diode 1N917(Si), xc nh in tr ng r v tm im
v

Gii:
Bc 1: dng kiu in th ngng:
mA
V V
I
K S
77 , 4
7 , 0 15
' =
K R
D
3
=
I
D
-

I
V V 0
I
Q
V
0
0 V
D
Diode thc
D

K D D
D
D
0
I
V 1
= =
doc o
V
0
: in th offset
r

+ V
D

I
D
-
+ V
D

Diode l tng

I
D
-
+ r
0
- + V
0

I
D
V
D
= V
0
+r
0
I
D
Hnh 18 - 19
4
3
2
1
6
5
I
D
=4,77mA
I
D
(mA)
Q
Q
I
D
=4,67mA
Vs=15V
R=3K
+
V
D
=?
-
I
D
=?
0,2 0,4 0,6 0,8 0,9
V (volt) 0
D
Hnh 20
Vs=15V
R=3K
+
V
D
=0
-
,7V
I
D
=?
Hnh 21

Bc 2: vi I
D
=4,77mA, ta xc nh c im Q (V
D
=0,9V)
c 3: v tip tuyn ti Q vi c tuyn tm in th offset V
0
.
V
0
=0,74V
c 4: Xc nh r t cng thc:
B
B
0
=
16 , 0 74 , 0 9 , 0 V
= = 32 r
D

c 5: Dng ki u vi in tr ng r
0
.
77 , 4 77 , 4 DI
D
0
B u m
A 00467 , 0
32 3000
74 , 0 15
r R
V V
I
0
0 S
D
=
+
=
+
=
I
D
=4,67mA
V
D
=V
0
+r
0
I
D
=0,74+0,00467x32=0,89V
h :
rong trng hp diode ng vi tn hiu nh, in tr ng r
0
chnh l in
tr ng r
d
m ta thy ph ng vi in tr ca hai vng bn v N.
r
0
=r
ac
=r
p
+r
n
+r
d
=r
B
+r
d
vi r
d
=
+
V
S
=15V
-
R
+
V
K
=

0,74V

-
Hnh 22
r
0
=32
I
D
V
C
T c d
n trc c dn P
mA I
mV 26
D

V d: Xem mch dng diode 1N917 vi tn hi V
S
(t)=50 Sint (mV).
m in th V
D
(t) ngang qua diode, bit rng in tr r
B
ca hai vng bn dn P-N l
0.
ii:
u nh
T
1

Vs=15V
R=3K
Vs(t) + -
+
V
D
(t)?
-
Hnh 23
50mV
-50mV

G
Theo v d trc, vi kiu mu in th ngng ta c V
D
=0,7V v I
D
=4,77mA.
T ta tm c in tr ni r
d
:
= = = 45 , 5
mA 77 , 4 I
D
r
mV 26 mV 26
r
d

Mch tng ng xoay chiu:
ac
=10 + 0,45=10,45
in th nh V
dm
ngang qua diode l 50 .
45 , 15
V
R
r
V
ac
dm
= =
3000 45 , 15 r
m
ac
+ +

u mu tn hiu rng v hiu ng tn s.
y m t mt diode c dng vi tn hiu hnh sin c bin ln.

Hnh 24
V
dm
=0,256 Sint (mV).
Vy in th tng cng ngang qua diode l:
V
D
(t) = 700mV + 0,256 Sin t (mV).

V
D
(t)
0,256mV
t

Ki
Hnh sau

+

-
Vs(t)
+
-
R=3K
700mV
r
ac
V
d
(t)
Vs(t)
+
-
+
V
L
(t)
-

R
L
v
S
(t)
-30V
30V
Vs(t)
+
-
+
R
L
-
-30V
+30V
Bn k dng Diode dn
+30V
-30V
+30V Bn k m

Vs(t)
+
-
+
R
L
-

V
L
(t)=0
Diode ngng
v
S
(t)
v
L
(t)
0
Diode dn
Diode ngng
0
Hnh 25

Khi diode c dng vi ngun tn hiu xoay chiu tn hiu bin ln, kiu mu
tn hi
t qu l na chu k dng ca tn h diode dn v xem nh mt ngt in
ng mch. na chu k m k tip, diode b n cc nghch v c vai tr nh mt ngt
in h mch. Tc d g ny ca diode c g i l chnh lu na sng (mch chnh lu
s c kho st k gio trnh mch in t).
p ng trn ch ng khi tn s ca ngun xoay chiu V
S
(t) thp-th d nh in
50/60Hz, tc chu k T=20m 6,7ms-khi tn s ca ngun tn hiu ln cao (chu k
hng nano giy) th ta phi quan tm n thi gian chuyn tip t bn k dng sang bn
k m ca tn hiu.
hi tn s ca tn hiu cao, in th ng ra ngoi bn k dng (khi diode c
phn cc thun), bn k m ca tn hiu c c mt phn v c dng nh hnh
v. C l tn s ca ngun tn hiu cng cao th thnh phn bn k m xu hin ng
ra cng ln.
iu ng ny do in dung khuch tn C
D
ca ni P-N kh ln khi c phn cc
thun (C
D
c tr t 2000pF n 15000pF). Tc dng ca in dung ny lm cho diode
khng th thay i tc thi t trng thi dn sang trng thi ngng dn m phi mt i
mt thi gia ng c gi l thi gian hi ph u m i k n tc
dng ca in dung c
v
S
(t)
u nh khng th p dng c. v vy, ngi ta dng kiu mu mt chiu tuyn
tnh.
K iu,
ph
n
s/1
K
ng qua
h t


v
S
(t)
v
L
(t) v
L
(t)
t(ms)
s)
t(ms)
t(ms) t(m
Hnh 26

H
n (th c, ki u diode ph
a ni.

r
B
r
d r
B
r
r
C
D
C
T
K
K
c Phn ghch
Hnh 27
A A

Phn c thun cc n


r : in tr hai vng bn dn P v N
n tip
hng thng, gi tr c h thay hn 1 y n xp x 1s.
Hiu ng ca t
r
trn diode chnh lu (sng sin n t nh nh sau. Ngi ta nhn
thy ng, c th b qua thi gian hi phc trn m nh lu khi t
r
<0,1T, vi T l chu
k c sng sin c chnh lu.
B
r
d
: in tr ng ca ni P-N khi phn cc thun (rt nh)
C
D
: in dung khuch tn
r
r
: in tr ng khi phn cc nghch (rt ln)
C
T
: in dung chuy
thy r hn thi gian hi phc, ta xem p ng ca diode i vi hm nc (dng
sng ch nht) c m t bng hnh v sau.

v
S
(t)

T a t
r
c t i t nh
) c di
ch ch
nano gi
h
r
a

+ Vd -
Vs(t)
+
-
i
R
L
v
d
i
d
t
t
t
0,7V
-v
r
v
f
-V
r
L
R
f
f
V
i =
L
r
r
i
R
V
=
I
0
t
r
0
0
0
i
r
Hnh 28

v
S
(t)
T=2t
r
t
t
i
d
(t)
0

0

2. Diode tch sng.
Cng lm nhim v nh diod
Hnh 29
Tn hiu tn
s cao
v
S
(t)
T=10t
r
t
t
i
d
(t)
0
0
Tn hiu tn
s thp
e chnh lu nhng thng vi tn hiu c bin nh
v tn s cao. Diode tch sng thng c ch to c dng thun nh v c th l Ge
hay S
ca diode schottky.
a thy trong diode schottky, th i ta dng nh ay th cht bn dn
loi P v cht bn dn loi N l Si. Do nhm l mt kim loi nn ro in th trong diode
schottky gim n ng ca diode schottky khong 0,2V n 0,3V.
l diode schott ho ngc ln hn th sp cng
nh h n diode Si.
o th i gian hi phc rt nh ( i trng n diode schottky c dng
rt ph bin trong k thut s v iu khin.
i nhng diode Ge c dng nhiu hn v in th ngng V
K
nh.
3. Diode schottky:
Ta thy nh hng ca thi gian hi phc (tc thi gian chuyn mch) ln dng
sng ng ra ca mch chnh lu. rt ngn thi gian hi phc. Cc ht ti in phi di
chuyn nhanh, vng him phi hp. Ngoi ra, cn phi to iu kin cho s ti hp gia
l trng v in t d dng v nhanh chng hn. l nguyn tc ca diode schottky.
M hnh sau y cho bit cu to cn bn

P-thn
N.Si
Ro in th Schottky
SiO
2
Nhm
Anod Catod
Tip xc Ohm
Anod Catod
Hnh 30

T ng ng m th
h nn in th ng
ky c in th bo diode Si v in
D thi nhanh) n

Hnh 31
V
D
(Volt)
Si Diode
Schottky
I
d
(mA)
0 0,2 0,4 0,6 0,7
Diode
Schottky
Si

ne
Nh kho st ph c, khi in th phn cc nghch ca diode ln, nhng
ht t in sinh ra di tc nhit b in trng mnh trong vng h ng vn tc
v ph v cc ni ho tr trong cht bn dn. C ch ny c chng cht v cng ta c
dng in ngc rt ln. Ta ni diode ang trong vng b ph hu theo hin tng
tu h hng ni P-N.
Ta cng c mt loi ph hu khc do s ph hu trc tip cc ni ho tr di tc
dng ca in trng. S ph hu ny c tnh hon nghch, ngha l kh ng ht
tc dng th cc n c lp li, ta gi hin tng n r.
Hiu ng ny c ng dng cc diode Zener. Bng cch thay i nng
ch t pha, ngi ta c th ch to c cc diode Zener c in th Zener khong vi
volt n vi hng trm volt. l khi phn cc thun, c tuyn ca diode Zener ging
ht d yn c dng ca diode Zener l khi phn
cc ngh

4. Diode n p (diode Ze r):
n tr
i dng im t
sau

yt v gy
i in tr
i ho tr y l hiu ng Zene
ch to
iode thng (diode chnh lu). c tu

ch vng Zener, in th ngang qua diode gn nh khng thay i trong khi
dng in qua n bin thin mt khong rng.


* nh hng ca nhit :
Khi nhit thay i, cc ht ti in sinh ra cng thay i theo:
Vi cc diode Zener c in th Zener V
Z
< 5V th khi nhit tng, in th Zener
i l diode tuyt -diode
avalanche) li c h s nhit dng (V
Z
tng khi nhit tng).
5V gn nh V
Z
khng thay i theo nhit
.
Kiu mu l t
rong kiu mu l tng, diode Zener ch d n in khi in th phn cc nghch ln
hay b ng in th V
Z
. in th ngang qua diode Zener khng thay i v bng in th
gim.
Vi cc diode c in th Zener V
Z
>5V (cn c g
Vi cc diode Zener c V
Z
nm xung quanh

* ng ca diode Zener:
T
I
D
(mA) + V
D
-
I
D
Vng phn cc nghch
V
D
(Volt)
V
K
=0,7V
Vng phn c thun c
I=-I
D
=I
Z
V=-V
D
=V
Z
- +
er V
Z
=Vzen
0
Hnh 32
Hnh 33
-4 -3 -2 -1 0
-5
-10
-15
-20
-25
-30
-35
-40
-45
V
D
(Volt)
I
D
(mA)
-40 -30 -20 -10 0
-5
-10
-15
-20
-25
-30
-35
-40
-45
V
D
(Volt)
A) I
D
(m
25
0
60
0
C 60
0
C 25
0
C
) Diode c V
Z
<5V (b) Diode c V
Z
>5V (a
C
V
Z
th V
Z
, diode Zener khng dn
in (I
D
=0).
4,3V dng diode zener 1N749 nh sau:
hi cha mc ti vo, th d ngun V
S
=15V, th dng qua zener l
. Khi in th phn cc nghch nh hn hay bng in

+ V -
Z

Do tnh cht trn, diode zener thng c dng ch to in th chun.
Th d: mch tao in th chun
Hnh 34
I
Z
V =-V

K :
mA 8 , 22
470
3 , 4 15
R
V V
I
Z S
=
=
hc t, trong vng zener, khi dng in qua diode tng, in th qua zener cng
tng cht t ch khng phi c nh nh kiu mu l tng.
gi ta nh ngh in tr ng c a diode l:
* Kiu mu ca diode zener i vi in tr ng:
T
N a
ZT
in th
in th ngang qua hai
ZO ZT
Z
I
V V
Z r

= =
ron : V
ZO
l nghch bt u dng in tng.
V
ZT
l u diode dng in s dng I
ZT
.

T g

V
S
=615V
X Ti
R=470

IN749 I
4,3V
Hnh 35
V
S
=615V
X Ti
R=470
+ I
V
Z
=4,3V
-
D Z
I
D
=-I
Z
Diode l tng
I
D
0 V
D
-V
Z
+ V -
Z

5. Diode bin dung: (Varicap Varacto
Phn trn ta thy, s phn b in tch dng v m trong vng him thay i
khi n th phn cc nghch th ia ha diode mt in dung:
r diode)
i ay i, to ra g i u
d
W V
in dung chuyn tip C
T
A Q
C =
=

t ng dng ca diode l dng n n t t in thay i. Th d nh mun thay
i t cng hng ca mt mch, ngi ta thay i in th phn cc nghch ca mt
diode bin dung.
Hnh 36
T
t l nghch vi rng ca vng him, tc t l nghch
vi in th phn cc.
c tnh trn c ng dng ch to diode bin dung m tr s in dung s thay
i theo in th phn cc nghch nn cn c gi l VVC diode (voltage-variable
capacitance diode). in dung ny c th thay i t 5pF n 100pF khi in th phn
cc nghch thay i t 3 n 25V.

M h m
n s

+ V
Z
-
I
Z
Z
Z
+ V
Z0
-

Diode l tng
I
ZT
0
I
Z
V
Z
V
Z0
V
ZT

60
40
20
C(pF)

80
V
R
(Volt)
0 -2 -4 -6 -8 -10 -12 -14
16
c tuyn ca in dung theo
in th c dng nh sau:
Hnh 37

6. Diode hm (Tunnel diode)
c ch to ln u tin vo nm 1958 bi Leo-Esaki nn cn c gi l diode
Esaki. y l mt loi diode i nhiu loi diode khc. Diode
hm c nng pha cht ngoi lai l t nhiu (c vng P ln vng
N)
ng nh sau:

Khi phn cc nghch, dng in tng theo in th. Khi phn cc thun, in th
p, dng in tng theo in th nhng khi ln n nh A (V
P
I
P
), dng in li t
ng gim trong khi in th tng. S bin thin nghch ny n thung lng B (V
V
I
V
).
au , dng in tng theo in th nh diode thng c cng cht bn dn cu to. c
nh c th ca diode hm ty thuc vo cht bn dn cu to Ge, Si, GaAs (galium
senic), GaSb (galium Atimonic) Vng AB l vng in tr m (thay i t khong
0 n 500 mV). Diode c dng trong vng in tr m ny. V tp cht cao nn vng
im ca diode hm qu hp (thng khong 1/100 ln rng vng him ca diode
ng), nn cc ht ti in c th xuyn qua mi ni theo hin tng chui hm nn
T s Ip/Iv rt quan trng trong ng. T s ny khong 10:1 i vi Ge v 20:1

i vi GaAs.
Mch tng ng ca diode hm trong vng in tr m nh sau:

c bit c dng khc v
n hn diode thng r
c tuyn V-I c d

th
S
t
A
5
h
th
c gi l diode hm.
ng d

L
L
Ci
R
U
Diode
bin dung

Hnh 38
I(mA)
V(volt)
Anod
Catod
I
P
I
V
V
P
0,25 0,5V
B Thung lng
nh A
Diode thng
Diode hm
0
Hnh 39

Ls: Biu th in cm ca diode, c tr s t 1nH n 12nH.
R
D
: in tr chung ca vng P v N.
C
D
: in dung khuch tn ca vng him.
Th d, diode hm Ge 1N2939: Ls=6nH, C
D
=5pF,R
d
=-152, R
D
=1,5
Diode c vng him hp nn thi gian hi phc nh, dng tt tn s cao. Nhc
im ca diode hm l vng in tr m phi tuyn, vng in tr m li in th thp
nn kh dng vi in th cao, nng cht pha cao nn mun gim nh phi ch to
mng manh. Do , diode hm dn dn b diode schottky thay th.
ng dng thng dng ca diode hm l lm mch dao ng tn s cao.
Bi tp cui chng

1. Dng kiu mu l tng v in th ngng ca diode tnh dng in I
1
, I
2
, I
D2
trong
mch in sau:

2. Tnh dng in I
1
v V in th ngng ca
diode)

V
O
D /Si
2
D /Si
R1=1K
-12V
R2=3K
+12V
1
I
I
2
R
D Ls
Cd
-Rd
Hnh 40
O
trong mch sau (dng kiu mu l tng v
I
1
I
2
I
D2
1
R1=1K
R2=350
D /Si
10V
D /Ge
2


ng mch in sau khi R
2
= 50 v khi R
2
= 200. Cho bit Zener s dng

Z
= 8V.

3. Tnh I
Z
, V
O
tro
c V
Z
= 6V.

100

4. Tnh I, V
O
trong mch sau, cho bit Zener c V
I
Z
R2
12V

+20V
R1=1K
I
R2=3K
Chng V
TRANSISTOR LNG CC
I. CU TO C BN CA BJT
m 1947
bi hai nh bc hc W.H.Britain v J.Braden, c c o trn cng mt mu bn dn
Germ nium hay Silicium
nh sau y m t cu trc ca hai loi transistor lng cc PNP v NPN.
a nh vng pht E c pha m (n i lai nhiu), vng
nn B c pha t v vng thu C li c pha t hn na. Vng nn c kch thc rt hp
(nh nht trong 3 vng bn dn), k n l vng pht v vng thu l vng rng nht.
Transistor NPN c p ng tn istor PNP. Phn sau tp trung kho st
trn transistor NPN nhng i vi transistor PNP, cc c tnh cng tng t.
II. TRANSISTOR TRNG THI CHA PHN CC.
t rng khi pha cht cho (donor) vo thanh bn dn tinh khit, ta c cht bn
dn loi N. Cc in t t do (cn tha c t cho) c mc nng lng trung bnh
gn di dn in (mc nng lng Ferm nng ln). Tng t, nu cht pha l cht
nhn (acceptor), ta c cht bn dn loi P. Cc l trng ca cht nhn c mc nng lng
trung bnh nm gn di ho tr hn (mc nng lng Fermi gim xung).
(BIPOLAR JUNCTION TRANSISTOR-BJT)
Transistor lng cc gm c hai mi P-N ni tip nhau, c pht minh n
h t
a .
H
Cc pht
E
Emitter
B Cc nn (Base)
n+ p n-
Cc thu
C
Collecter
E C
B
Transistor PNP
Cc
E
Emitter
B Cc nn (Base)
n
Cc th
C
Collec
p-
u
ter
E C
B
Transistor NPN
Hnh 1
pht
p+

T n thy rng, ng cht ngo
s cao tt hn trans
Ta bi
a ch
i c
Khi ni P-N c xc lp, mt ro in th s c to ra ti ni. Cc in t t d
trong vng N s khuch tn sang vng P v ngc li, cc l trng trong vng P khuch
tn sang v
o
ng N. Kt qu l ti hai bn mi ni, bn vng N l cc ion dng, bn vng
P l cc ion m. Chng
ca transistor. Quan st vng him, ta
thy r

to ra ro in th.
Hin tng ny cng c thy ti hai ni
ng kch thc ca vng him l mt hm s theo nng cht pha. N rng
vng cht pha nh v hp vng cht pha m.
Hnh sau y m t vng him trong transistor NPN, s tng quan gia mc nng
lng Fermi, di dn in, di ho tr trong 3 vng, pht nn, thu ca transistor.

n+
Vng pht
p
Vng nn
n-
Vng thu

Mc Fermi tng cao
Vng him
M ermi gim Mc
n+ Vng pht p Vng nn n- Vng thu
Di dn in
Di ho tr
E(eV)
c F Fermi tng nh
Di dn in (Conductance band)
Mc Fermi xp thng
Di ho tr (valence band)
Hnh 2
III. C CH HOT NG CA TRANSISTOR LNG
CC.

phn cc thun
trong lc ni thu nn phi c phn cc nghch.
n nn vng him hp li. Ni thu nn c phn
cc ngh
hiu in t t cc m ca ngun V
EE
i vo vng pht v khuch tn sang vng
nn. Nh ta bit, vng nn c pha tp cht t v rt hp nn s l trng khng nhiu,
do lng trng khuch tn sang vng pht khng ng k.
ch phn cc nh sau:
o vng nn hp v t l trng nn ch c mt t in t khuch tn t vng pht qua
ti hp vi l trng ca vng nn. Hu ht cc in t ny khuch tn thng qua vng thu
v b t v cc dng ca ngun V
CC
.
ng thu chy v cc dng ca ngun V
CC
to ra dng in thu I
C

chy vo vng thu.
Mt khc, mt s t in t l ht in thiu s c a vng nn chy v cc dng ca
ngun V
EE
to nn dng in I
B
rt nh chy vo cc nn B.
Trong ng dng thng thng (khuch i), ni pht nn phi c
V ni pht nn c phn cc thu
ch nn vng him rng ra.
N
l
M

D
h
Hnh 3
n+
Phn cc thun
p
n-
Phn cc nghch
Dng in t
I
B
Dng in t
V
EE
R
E
R
C
V
CC
I
C
I
E
Cc in t t do ca vng pht nh vy to nn dng in cc pht I
E
chy t cc
pht E. Cc in t t v
Nh vy, theo nh lut Kirchoff, dng in I

E
l tng ca cc dng in I
C
v I
B
.
Ta c:
B C E
I I I + =
Dng I
B
r (hng microa t nh mpere) nn ta c th coi nh: I
E
# I
C
IV. CC CCH RP TRANSISTOR V LI DNG
I
Khi s dng, transistor c rp theo mt trong 3 cch cn bn sau:
p theo kiu cc thu chung (3)

c chung chnh l cc c ni mass v dng chung cho c
hai ng vo v ng ra.
p, ngi ta nh ngha li dng in mt chiu nh sau:
N.
Rp theo kiu cc nn chung (1)
Rp theo kiu cc pht chung (2)
R

I

Trong 3 cch rp trn, c
Trong mi cch r
vao ngo ien Dong
ra ngo ien Dong
en ng = i do li o
li dng in ca transistor thng c dng l li trong cch rp cc pht
chung v cc nn chung. li dng in trong cch rp cc pht chung c cho bi:
E
I
C
vo ra
Kiu cc nn chung
I
E
I
B
vo ra
Kiu cc thu chung
I
B
I
C
vo
ra
Kiu cc pht chung
Hnh 4
B
C
DC FE
I
I
h =
Nh v
li dng in trong cch rp cc nn chung c cho bi: li dng in trong cch rp cc nn chung c cho bi:
y: IC = DC.IB y: IC = DC.IB
Nhng: I
E
= I
C
+ I
B
=
DC
.I
B
+I
B
I
E
= (
DC
+ 1).I
B
Nhng: I
E
= I
C
+ I
B
=
DC
.I
B
+I
B
I
E
= (
DC
+ 1).I
B
E
C
DC FB
I
I
h =
c tr s t
DC
vi chc n vi trm, thm ch c th ln n hng ngn.
DC
c tr
t 0, n 0,999 tu theo loi transistor. Hai thng s
DC
v
DC
c nh sn xut
cho bit.
phng trnh cn bn:
I
E
= I
C
+ I
B
Ta c: I
C
= I
E
I
B
Chia hai v
95
T
c cho I
C
, ta c:
B
C
E
C
C
B
C
E
I
I
1
I
I
1
I
I
I
I
1 = =
Nh vy:
DC DC
1 1
1
=
Gii phng trnh ny tm hay , ta c:
DC DC
DC
DC
DC
1
= v
DC
DC
DC
1 +
=
* Ghi ch: cc cn c trn l tng qut, ngh l vn stor PNP.
in c chy trong hai transistor PNP v NPN c chiu nh sau:
h d:
t transistor NPN, Si c phn cc sau cho I
C
= 1mA v I
B
= 10A.
g th a ng vi transi
Ta ch dng th
I
E
I
C
I
E
I
B
NPN
I
C
I
B
PNP
Hnh 5

T
M
Tnh
DC
, I
E
,
DC
.
Gii: t phng trnh:
B
I
C
DC
I
= , Ta c: 100
A 10
dc
phng trnh:
mA 1
= =
T
I
E
= c: I
E
= 1mA + 0,01mA = 1,01mA I
C
+ I
B
, ta
99 , 0
mA 01 , 1
mA 1
V t phng trnh:
I
E
DC
I
C
= = =
r Si PNP c
DC
= 50 khi I
E
= 1,5mA. Xc nh I
C
.
Gii:
Mt transisto
9 , 0
DC
8
50 1
50
1
DC
DC
=
+
=
+
=
I
C
=
DC
.I
E
= 0,98 x 1,5 = 1,47mA
V. D RANSISTOR.
dng in r ngc
(bo ho ngh c phn cc nghch.
Dng in r u l I
CBO
, c nh sn xut cho bit, c m t
bng
. Hnh v sau y cho
dng in I
CBO
.

NG IN R TRONG T
V ni thu nn hng c phn cc nghch nn cng c mt
i qua mi ni nh trong trng hp diode
t
ch)
ngc ny c k hi
hnh v sau:

y l dng in i t cc thu qua cc nn khi cc pht h
ta thy thnh phn cc dng in chy trong transistor bao gm c

I
E
= 0
I
CBO
I
CBO
V
CC
R
C
h
Current
Base (
Opene
Collector (cc thu)
(dng in)
Hnh 6
cc nn)
mitter (cc pht h)
Cc E
n+ p
n-
Hnh 7
I
E
I
C
=
DC
I
E
+ I
CBO
V
EE
V
CC
E C
DC
I
E
I
CBO
I
E
I
B
R R
Nh vy, ta c: I
C
=
DC
I
E
+ I
CBO
Nu I xp x 0, xem nh khng ng k.
Suy ra, I
C
=
DC
(I
C
+ I
B
) + I
CBO
Ta tm thy:
CBO
Ta c: I
C

DC
I
E

l cng thc l tng m ta thy phn trn. Ngoi ta, t phng trnh
dng in cn bn:
IE = IB + IC
I
C
=
DC
I
C
+
DC
I
B
+ I
CBO
DC
CBO
B
DC
DC
C
1
I
I
1
I

+

=
Nhng:
DC
DC
DC
1
= 1
1
DC
D
DC
+

= 1+
C

DC DC
DC DC
DC
1
1
1
1

+
= +
hay vo phng trnh trn, ta tm
I
C
=
DC
I
B
+ (
DC
+ 1)I
CBO
gi ta t: I
CEO
= (
DC
+ 1)I
CBO
v ph h trn c vit li:
I
C
=
DC
I
B
+ I
CEO
CEO
nh l dng in chy t cc C qua cc E
ca t cng c nh sn xut cho bit.
c t t nhy t
VI. C TUYN V-I CA TRANSISTO
Ngi ta thng ch n 3 loi c tuyn ca transistor:
n ng vo.
n ng ra
Mch n
1
=
T c:
N ng trn
Nh vy, ta c th hiu dng in r I
ransistor khi cc B h. Tr s ca I
CEO

C hng s
DC
,
DC
, I
CBO
, I
CEO
r vi nhi .
R.
c tuy
c tuy
c tuyn truyn
t g qut xc nh 3 c tuyn trn c biu din bng m hnh sau:

R
C
Hnh 8
I
CEO
V
CC
c nn h
I
CEO
Current (dng in)
Emitter (cc pht)
Openbase (cc nn h)
Collector (cc thu
I
B
= 0
)
C
I
1
I
2
BJT
V
2
V
1
Ng ra V
22
V
11
Ng vo
R
1
R
2

im cn ch : tu theo loi transistor v cc cch rp m ngun V
11
, V
22
phi mc
ng cc (sao cho ni thu nn phn ni pht nn phn cc thun). Cc
Ampe k c volt k V
1
v V
2
c ng chiu.
Chng ta kho st hai cch mc cn bn:L
1. Mc theo kiu cc nn chung:
Mch sau:

c tuyn ng vo (input curves).
L c tuyn biu din s thay i ca dng in I theo in th ng vo V vi
V
CB

c tuyn c dng nh sau:
hn xt:

cc nghch v
ng phi mc I
1
, I
2
, c
in nh
I
1
I
2
V
2
V
1
V
EE
R
E
R
C
E BE
c chn lm thng s.

N
V
CC
Hnh 10
I
E
I
C
+
V
BE
V
CB
+
+
V
CB
= 01V
V
CB
= 00V
V h
+
V
CB
= 20V
V
CB
= 10V
CB
0,6
V
BE
(Volt)
0,4 0,2 0
I
E
(mA)
Hnh 11

Khi ni thu nn h, c tuyn c dng nh c tuyn ca diode khi phn cc
thun.
in th ngng (knee voltage) ca c tuyn gim khi V
CB
tng.
c tuyn ng ra (output curves)
L c tuyn biu din s thay i ca dng in cc thu I
C
theo in th thu nn
V
CB
i dng in cc pht I
E
lm thng s.
sau: Ta ch n ba vng hot ng ca transistor.
ng thng song song v cch u. Trong cc ng dng
thng thng, transistor c phn cc trong vng tc ng.

ng ngng: ni nn pht phn cc nghch (I
E
=0), ni thu nn phn cc nghch.
Trong vng ny transistor khng hot ng.
Vng bo ho: ni pht nn phn cc thun, ni thu nn phn cc thun. Trong cc
ng d ng c bit, transistor mi c phn cc trong vng ny.
2. Mc theo kiu cc pht chung.
y l cch mc thng dng nht trong cc ng dng ca transistor. Mch in nh sau:
v
c tuyn c dng nh
Vng tc ng: Ni nn pht phn cc thun, ni thu nn phn cc nghch. Trong
vng ny c tuyn l nhng

V

0
1
2
3
4
5
6
2 4 6 8
I = 0mA
1 mA
2 mA
3 mA
A
5 mA
6 mA
V
CB
(V)
I
C
(mA)
Vng ngng
ng Vng tc
4 m
V
n
g

b
o

h
a

Hnh 12
I
CBO

E

+
I
1
I
2
V
2
V
1
V
CC
V
BB
R
B
R
C
Hnh 13
I
B
I
C
+
V
BE
V
CB
+ +

c tuyn ng vo:
iu din s thay i ca dng in I
B
theo in th ng vo V
BE
. Trong hiu th
thu pht V
CE
chn lm thng s.
c tuyn nh sau:

c tuyn ng ra:
iu din dng in cc thu I
C
theo in th ng ra V
CE
vi dng in ng vo I
B

c chn lm thng s.
Dng c tuyn nh sau:

B
I
B
(A)

B

0
V
BE
(V)
0,2 0,4 0,6 0,8
V
CE
= 0V
V
CE
= 10V
V
CE
= 1V 100
40
80
60
20
Hnh 14

o ho, vng tc ng v
in r I
CEO
.
c tuyn truyn: (Transfer characteristic curve)
T c tuyn truyn ca
transistor.
ng vo V
BE
c tuy

Ta thy cng c 3 vng hot ng ca transistor: vng b
vng ngng.
Khi ni tt V
BE
(tc I
B
=0) dng in cc thu xp x dng
c tuyn ng vo v c tuyn ng ra. Ta c th suy ra
c tuyn truyn biu din s thay i ca dng in ng ra I
C
theo in th
vi in th ng ra V
CE
lm thng s.
n c dng nh sau:

0
2 4 6 8
1
2
3
4
5
6
I = 0 A
20 A
B
40 A
60 A
80 A
100 A
120 A
I
C
(mA)
Vng tc ng
V
CE
(V)
Vng ngng
V
n
g

b
o

h
a

Hnh 15
I
CEO


I
C
(mA)
0
V
BE
(V)
V
CE
=10(V)
I
CES
= I
CBO
.1 .2 .3 .4 .5
6 7 8
Vng ngng Vng
tc ng
Vng bo ho
V
BE
(sat) cut-in

Hnh 16

i vi transistor Si, vng hot ng c V
BE
nm trong khong 0,5-0,8V. Trong
vng ny, c tuyn truyn c dng hm m. vng bo ho, dng I tng nhanh khi
V
BE
t ng
xp x I
CBO
.
y c trong vng t ng, khi V
BE
thay i mt l (t dng I
B
thy i)
th dng I
C
thay i mt lng kh ln. V th, trong cc ng dng, ngi ta dng in
th cc nn V
B
in th i n v cc B cn gi l cc khi
3. nh hng ca nhit ln cc c tuyn ca BJT.
h ta thy, cc tnh cht in ca cht bn dn u thay i theo nhit . Do
, cc c tuyn ca BJT u thay i khi nhit thay i.
Khi nhit tng, cc dng a cc thu (I
CBO
,Iceo, I
CES
) u tng.
Khi nhit tng, cc li in th
DC
,
DC
cng tng.
Khi nhit tng, in th phn cc thun (in th ngng) ni nn pht V
BE

n r I
CBO
tng gp i khi nhit tng 8 C trong transistor Si.
C
hay i. vng ngng, khi V
BE
cn nh, dng r qua transistor I
CES
rt nh, th
ng nh Nga ho
E
lm u khi n.
N
in r c
gim. Thng thng, V
BE
gim 2,2mV khi nhit tng 1
0
C.
Dng i
0
=

8
25 t
0
CBO
0
CBO
C t ( I 2 ). C 25 ( I )
Tc ng ca nhit nh h ng quan trng n im iu hnh ca transistor. N
l nguyn nhn lm cho thng s ca transistor thay i v kt qu l tn hiu c th b
bin
dng.

VII. IM IU HNH NG THNG IN
M U.
a xem mch dng transistor BJT NPN trong m hnh cc n h sau:
xc nh iu hnh Q v ng thng ly in m u, ngi ta
thng dng 3 bc:

I
C
(mA)
50
0
C 25
0
C
250A
I
B
(A)
50
0
C
25
0
C
(2,2mV/ C)
200A
150A
100A
0
LY
T CHI
T n chung n

nh im t t chi
V
BE
(mV)
0
I
B
=0A
50A
0 645 700 V
CE
(Volt)
V
BE
(mV)
0
I
C
(mA)
645 700
50 C
0
25
0
C
(2,2mV/
0
C)
10
V
CE
=15V
Hnh 17
V
EE
V
CC
V
BE
V
CB
+
+
I
E
I
C
R
E
R
C
Vo Ra
Hnh 18
1. Mch ng vo:
Ta c: V
BE
+ R
E
I
E
- V
EE
= 0
E
BE EE
E
R
V V
I

=
Ch l V
BE
= 0,7V v V i BJT l Si v
BE
= 0,3V nu BJT l Ge.
2. T cng thc I
C

DC
I
E
I
E
.
uy ra dng in cc thu I
C
.
. Mch ng ra:
a c V
CB
- V
CC
+ R
C
I
C
= 0
=
S
3
T :
C
CC
C
CB
C
=
R
V
R
V
I +
y l phng trnh ng thng ly in mt chiu (ng thng ly in tnh).
Trn c tuyn ra, giao im ca ng thng ly in I
E
tng ng (thng s) ca
c t
Ta ch rng:
Khi V
CB
= 0
vi
uyn r chnh l a im tnh iu hnh Q.
C
CC
V
SH C
R
I I = = (Dng in bo ho)
Khi I
C
= 0 (dng ngng), ta c: V
CB
= V
CC
= V
OC

t n xt:
th nh hng tng i ca R
C
,V
CC
, I
E
n im iu hnh, ta xem v d sau y:

V
CB
(Volt)
0
I
C
(mA)
I
E
= 6mA
I
E
= 5mA
I
E
= 4mA
I
E
= 3mA
I
E
= 2mA
I
E
= 1mA
0mA
Q
V
CBQ
C
CC
SH
R
V
I =
V
CB
=V
CC
=V
OC
Hnh 19

M s nh
y l
1. nh hng ca in tr cc thu R
C
: R
C
= 1,5K; 2K; 3 K

a c:

V = 1V
V
CC
= 12V

EE

C
E
BE EE
E
I mA 3
1 , 0
7 , 1 1
R
V V
I =
= T
C
CC
C
CB
C
R
V
R
V
I + = * Kh
C
= 2 K, i R
mA 6 V
2
12
2
V
C
3
CB
B
= + =

i.

Bin son: Trng Vn Tm

* Khi R
C
= 1,5 K (R
C
gim), gi R
E
, V
EE
, V
CC
khng
I
E
= 3mA
I
C
R
E
= 100
Hnh 20
R
C
V
CB
(Volt) 0
I
C
(mA)
I
E
= 3mA
I
C
# I
E
# 3mA
V
CB
= V
CC
- R
C
.I
C
= 12 - 1,5x3 =7,5V
mA 8
5 , 1
12
R
V
I
C
CC
SH
= = =

Q
2 4 6 8 10 12
Hnh 21
6
5
4
3

2
1
V
OC
Trang 75

I
C
# I
E
=3mA
V
C

* Khi R
C
= 3 K (R
C
tng)
B
= V
CC
- R
C
.I
C
= 12 - 3x3 = 3V
mA 4
3
12
R
V
I
C
CC
SH
= = =

. nh hng ca ngun phn cc ni thu nn
CC
.
u gi I
E
l hng s (tc V v R
E
l hng s
C
l hng s y
CC
,
ta th : K V
CC
tng th V
CB
tng, khi V
CC
gim th V
CB
gim.

Nh vy, khi gi cc ngun phn cc V
CC
, V
EE
v R
E
c nh, thay i R
C
, im
iu hnh Q s chy trn c tuyn tng ng vi I
E
= 3mA. Khi R
C
tng th V
CB
gim v
ngc li.
2 V
N
EE
), R , tha i ngun V
y hi
V
CB
(Volt) 0
I
C
(mA)
I
E
= 3mA
Q
2 4 6 8 10 12
V
OC
Hnh 22
8
4
3
2
1
7,5V
7
6
5
V
CB
(Volt) 0
I
C
(mA)
I
E
= 3mA
Q

2 4 6 8 10 12
V
OC
Hnh 23

4
3
2
1
Th d:

3. nh hng ca I
E
ln im u hnh:
N gi R
C
v V
CC
c hay i I
E
(tc th i R
E
hoc V
EE
) ta thy: khi I
E

tng th V
CB
gim (tc I
C
tng), khi I
C
gim th V
CB
tng (tc I
C
gim).
E C
eo v tin d
SH
Transistor dn dn i vo vng
bo h gi l I
C
(sat). Nh vy:

V

i
u ta nh, t ay

Khi I tng th I tng th n n tr I .
o. Dng ti a ca I
C
, tc dng bo ho
C
C
R
CC
SH
V
I ) t = = sa ( I
Lc ny, V
CB
gim rt nh v xp x bng 0V (th l 0,2V).
hi I
E
gim th I
C
gim theo. Transistor i dn vo vng ngng, V
CB
lc gi l V
CB
(off)
v I
C
= I
CBO
.
t s
K
EE
= 1V
V
CC
: 10V
12V
14V
+
R
E
= 100 R
C
= 2K
I
C
I
C
(mA)
7
6
5
4
3
2
1
2 4 6 8 10 12 14
0
I
E
=3 (mA)
V
CB
Hnh 24
Q
1 Q
1
Q
2
V
CC
= 14V
V
CC
= 12V
V
CC
= 10V
Hnh 25
I
C
(mA)
7
6
5
3
2
1
2 4 6 8 10 12 14
4
0
I
E
=3 (mA)
V
CB
Q
3
Q
C
CC
SH ) sat ( C
R
V
I I = =
I
E
=2 (mA)
I
E
=1 (mA)
I
E
=4 (mA)
I
E
=5 (mA)
I
E
=6 (mA)
Q
1
Q
2 Tng
Gim
Q
4
I
CBO
Nh vy, V
CB
(off) = V
OC
= V
CC
.
Vng bo ho v vng ngng l vng hot ng khng tuyn tnh ca BJT.
i vi mch cc pht chung, ta cng c th kho st tng t.
VIII. KIU MU MT CHIU CA BJT.
ua kho st phn trc, ngi ta c th dng kiu mu gn ng sau y ca
transistor trong mch in mt chiu:

mc n vi ch l in th thm V
BE
khi phn cc
thun l 0,3V i vi Ge v 0,7V i vi Si.
h d 1: tnh I
E
, I
C
v V
CB
ca mch c sau:
Q
E C
B
DC
I
E
I
E I
C
=
DC
I
E
I
E


E C
B
Tr

ansistor NPN

E C
B
DC E

E C
I
I
E I
C
=
DC
I
E
I
E

B

Transistor PNP
Tuy nhin, khi tnh cc thnh phn dng in v in th mt chiu ca transistor,
ngi ta thng tnh trc tip trn
Hnh 26
h i
c nn chung nh T

Si
V
EE
V
CC
R
E
R
C
0,7V V
CB
I
C
I
E
Si
V V
R
EE CC
E
R
C
0,7V V
CB
I
C
I
E
+
+
-
-
Hnh 27

Ta dng 3 bc:
Mch nn pht (ng vo):
E
EE
E
R
7 , 0 V
I

= ; I
C
#
DC
# I
E
p dng nh lut kir ra
Vi transist
choff (ng ), ta c:
or NPN: V
CB
= V
CC
- R
C
.I
C
; V
C
0
Vi transistor PNP: V
CB
= -V
C
R
C
.I
C
; V
CB
<0
h d 2: Tnh dng in I
B
, I
C
v in th V
CE
ca mch cc pht chung

B
>
C
+
+
+
-
-
-
T .

Mch nn pht (ng vo):
B
BB
B
7 , 0 V
I

=
R
Dng I
C
=
DC
.I
B
Mch thu pht (ng ra)
Hnh 28
V
BB
V
CC
R
B
R
C
0,7V +
V
I
C
I
B
CE
-
+
+ V
BB
V
CC
R
B
R
C
V
CE
I
C
I
B
0,7V -
-
+
Vi transistor NPN: V
CE
= V
CC
-R
C
I
C
>0
hnh l phng trnh ng thng ly in tnh trong mch cc pht chung.
IX. BJT VI TN HI XOAY U.
1. M hnh ca BJT:
a xem li mch cc nn chung, by gi nu ta a vo BJT mt ngun xoay chiu
V
S
(t) c bin
y l m hnh ca mt mch khuch i rp theo kiu cc nn chung. ng vo
v ng ra, ta c hai t lin lc C
1
v C
2
c in dung nh th no dung khng X
C
kh
nh n s ca ngun tn hiu c th xem nh ni tt (Short circuit) i vi tn hiu
xoay chiu v c th xem nh h mch (open circuit) i vi in th phn cc.
ch tng ng mt chiu nh sau:
y l mch m chng ta kho st phn tr c. Ngun i xoay chiu V
S
(t)
khi a vo mch s lm cho thng s stor thay i. Ngoi thnh phn mt chiu
cn c thnh phn xoay chiu ca ngu iu to ra chng ln.
gha l: i
B
(t) = I
B
+ i
b
(t)
v
CB
(t) = V
CB
+ v
cb
(t)
-V
EE CC
Vi transistor PNP: V
CE
= -V
CC
+ R
C
.I
C
<0
y c
U CHI
T
+V nh nh hnh v.

R
E
R
C
V
C1
~
+ -
C2
+ - +
Tn hiu vo

V

t
M

n th
transi
n tn h
N
i
C
(t) = I
C
+ i
c
(t)
i
E
(t) = I
E
+ i
e
(t)
S
(t)
-
V
V
V
Hnh 29
Tn hiu ra
V
0
(t)
Hnh 30
Si
V
EE
V
CC
R
E
R
C
0,7V
V
CB
I
C
I
E I
E
+
+
-
-
v
BE
(t) = V
BE
+ v
be
(t)
Thnh phn tc thi = thnh ph DC + thnh phn xoay chiu.
ong vng
nn u ca cc dng in. Do ni nn pht phn cc thun
nn gia B v E cng c m in tr ng r
e
ging nh in tr ng r
d
trong ni P-N
khi p
n
Trong m hnh cc dng in chy trong transistor ta thy: im B nm tr
c xem nh trung tm giao l
t
hn cc thun nn:
E
e
I
r =
mV

Ngoi ra, ta cng c in tr r
b
ca vng bn dn nn pht ( y, ta c th coi nh
y l in tr gia B v B). Do gia B v C phn cc nghch nn c mt in tr r
0
rt
ln. T
e
= i
b
ch qua v c coi nh mc song song
vi r
0
.
ong cch mc nn chung:
26
n+ p
B
n-
i
e
i
b
i
c
B
C E

uy nhin, vn c dng in i
c
= .i y
* l li dng in xoay chiu tr
c C C
ac
i di I
= =
= =
e
E E
i di I
hng thng ho
ac
gn bng xp x bng n v.
l li dng xoay chiu trong cch mc cc pht chung.
T c
DC
v
* in
b
c
B
C
B
C
fe ac
i
i
di
di
i
i
h = =
= = =
Thng thng hoc
ac
gn bng
DC
v cng thay i theo dng i
c
.
r s , cng c nh sn xu p.
Nh vy, m hnh ca transistor i tn hiu xoay chiu c th c m t nh

b
thng c tr b qua trong m hnh ca
ansistor.
T t cung c
i v
sau:

r s khong vi chc , r
0
rt ln nn c th
Hnh 31
C E
B
r
o
r
b
tr
r
e
B
B
i
e
.i
e
= .i
b
i
b
Hnh 32
2. in dn truyn (transconductance)
ay i ny bng mt c tuyn truyn (transfer curve) ca transistor.
c tuyn ny ging nh c tuyn ca diode khi phn cc thun.

Ngi ta nh ngha in dn truyn ca transistor
Ta thy rng, dng in cc thu I

C
thay i theo in th nn pht V
BE
. Ngi ta c
th biu din s th

I
D
(mA
C
(mA) = I
E
0 0
V
D
V
BE
(volt)
I
D
=I
O
.exp(V
D
/V
T
) I
C
=I
CES
.exp(V
BE
/V
T
)
) I
(volt)

I
C
0
V
BE
(mV)
(mA)
I
D
=I
O
.exp(V
D
/V
T
)
Q
Tip tuyn c
dc =g
m
=I
C
/V
T v
be
E
B

E
C
B
+
-
g
m
v
be
C
Hnh 33
l:
) t ( i i
) t ( v V
be BE
m
g
c c
= =
V chnh l dc ca tip tuyn vi c tuyn truyn ti im iu hnh Q.
ng t nh diode, ta cng c: T
T
BE
V
V
CES C
e . I I =
Trong
I
, I
C
l dng in phn cc cc thu;
CES
l dng in r cc thu khi V
BE
= 0V
e
KT
V
T
= (T: nhit Kelvin)
nhit bnh thng (25
0
C), V
T
= 26mV
Ta c th tnh g
m
bng cch ly o hm ca I
C
theo V
BE
.
T
BE
V
V
CES
BE
C
m
e .
VT
I
dV
dI
g = =
V ) (
C
V
I
g
m
=
nhit bnh thng (25
0
C) ta c
T
:
mV 26
I
g
C
m
=
3. Tng tr vo ca transistor:
Ng nh ngha vo c transistor bng m hnh sau y:

ng tr vo nhn t
cc n
:

i vi tn hiu xoay chiu, ta c mch tng ng
ng v

i ta tng tr a
BJT
i
in
+
-
v
in
Hnh 34
in
in
in
i
v
R =

Ta c hai loi tng tr vo: tng tr vo nhn t cc pht E v t
n B.
Tng tr vo nhn t cc pht E

i
e
= -i
in
+
-
v
be
= -v
in
Hnh 35
e
be
in
in
in
i
v
i
v
R = =
E C
B

Theo m hnh ca transistor
o nh sau:
-
+ B
E B E B
r
e
r
e
-
+ B
i
e i
e
i
e
1
r
b
+
i
b
r
b
Hnh 36
V i
e
=(+1)i
b
nn mch trn c th v li nh hnh pha di bng cch coi nh
dng
e
chy trong mch v phi thay r
b
bng
1
r
b
+
i .
Vy:
1
r ) 1 ( r
r
1
r
i
v
R
e b
e
b
e
be
in
+
+ +
= +
+
= =
t: h
ie
= r
b
+(+1).r
e
uy ra:
1
h
R
ie
in
+
= S
e
b
r
1
r
<<
+
Do >>1, r
b
nh nn nn ngi ta thng coi nh:
e
b
e in
r
1
r
r R
+
+ =
Tng tr vo nhn t cc nn B:
em m hnh nh ngha sau (hnh 37):

o i
e
=(+1)i
b
nn mch hnh (a) c th c v li nh mch hnh (b).
b
be
in
i
v
R =
B
E
C
+
-
v
be
= v
in
i
b
= i
in
Hnh 37
X

Mch tng ng ng vo:

D
+
-
E
B
B
i
b
r
b
-
B
B
i
e
r
e
+
E
i
b
r
b
i
b
( )
e
r . 1 +
Hnh 38
ie e b
b
be
in
h r ) 1 ( r
i
v
R = + + = = Vy:
Ngi ta t: r
=(1+).r
e
r
e
Thng thng r
e
>>r
b
nn: R
in
=h
ie
r
r
e
m
g
r

=
v
m
e
g
1
r =
Ngoi ra,
m
C
C E
e
I
r =
g
1
I
1
I
mV 26 mV 26
= = ; Vy:
mV 26
Ta ch thm l:
b c e be m
m e
be
e
i i i v g
g
1
i
v
r = = = ;
b be m
i v g =
4. Hiu ng Early (Early effect)
Ta xem li c tuyn ng ra ca transistor trong cch mc cc pht chung. Nm
1 2. J.Early t c phng th nghi nghin cu v hin tng ny c mang
tn ng. ng nhn xt:
ng gi tr cao c ng n cc thu I
C
, dng I
C
tng nhanh theo V
CE
(c tuyn c
dc ng).
nhng gi tr thp ca I
C
, dng I
C
tng khng ng k khi V
CE
tng (c tuyn gn nh
nm ngang).
Nu ta ko d tuyn ny, ta thy chng hi t ti mt im nm trn trc V
CE
.
im ny c gi l im in th
A
. Thng thng tr s ny thay i t 150V
n 250V v ngi ta thng coi V
A
.

95 hu m Bell
nh a d i
i c
Early V
= 200V
0 30

10 20
40 50
V
CE
(volt)
voltage
CE
= -V
A
= -200V
I
C
(mA)
Early
V
0
V
CE
(volt)
I
C
(mA)
I
CQ
V
CEQ
Q
I
C
= I
CQ
A
V
CE
= V
CE
-(-V
A
) = V
CE
+ V V
A
Hnh 39

Ngi ta nh ngha tng tr ra ca transistor:
C
A CE
C
A CE
C
CE
0
I
V V
0 I
) V ( V
I
V
r
+
=
=
C C
A
0
I
V 200
I
V
r = = T ng V
A
>>V
CE
nn: h
5. Mch tng g ay chiu c JT:
Vi tn hiu c bin nh v tn s khng cao lm, ng ta thng dng hai kiu
mu sau y:
Kiu hn tp: (hybrid-)
i m hnh tng ng ca transistor v cc tng tr vo, t ng tr ra, ta c mch
tng

Kiu mu re: (re model)
hnh tng ng xoay chiu ca BJT, cc tng tr vo, tng tr ra, ta
c m ng ng ny, ngi ta thng dng chung
mt m c thu chung v mt mch ring cho nn
chung.
- Kiu cc pht chung v thu chung:
n xo a B
i
V

ng hn tp nh sau:

Cng vi m
ch tng ng kiu r
e
. Trong kiu t
ch cho kiu rp cc pht chung v c
B C
E
v
be
i
b
r
b
r

g
m
v
be
r
o
i
c
Hnh 40(a)

- Kiu cc nn chung

o C
Kiu thng s h: (h-parameter)
Nu ta coi v
be
v i
c
l mt hm s ca i
B
v v
CE
, ta c:
v
BE
= f(i
B
,v
CE
) v i
C
= f(i
B
,v
CE
)
Ly o hm:

Thng ngi ta c th b r trong mch tng ng khi R qu ln.
CE
CE
BE
B
B
BE
BE be
dv
v
v
di
i
v
dv v
= =
CE
CE
C
B
B
C
C c
dv
v
i
di
i
i
di i
= =
Trong kiu mu thng s h, ngi ta t:
;
i
v
h
B
BE
ie
=
CE
BE
re
v
v
h
= ;
B
C
fe
i
i
h
= = ;
CE
C
oe
v
i
h
=
Vy, ta c:
v
be
= h
ie
.i
b
+ h
re
.v
ce
i
c
= h
fe
.i
b
+ h
oe
.v
ce
T hai phng trnh ny, ta c mch in tng ng theo kiu thng s h:

B (E)
E (C)
C
v
be
i
b
r
e
i
b
r
o
i
c
Hnh 40(b)
I
B

I
C
vo
ra
Kiu cc pht chung
I
B
I
E
vo ra
Kiu cc thu chung
B
C
B
i
e
r
e i
e
i
c
Hnh (c)
r
o
I
E

I
C
vo ra
Kiu cc nn chung

h
re
thng rt nh ( hng 10
-4
), v vy, trong mch tng ng ngi ta thng b
h
re
.v
ce
.
So snh vi kiu hn tp, ta thy rng:
+ = + + = r r r ) 1 ( r h
b e b ie

Do r
b
<<r
nn h
ie
= r
Nu b qua h
re
, ta thy:
ie
b
h
be
v
i = Vy:
ie
be
fe b fe
h
v
. h i h =
Do ,
fe
be
fe b fe be m
h
v
h i h v g = = ;
Hay
ie
fe
m
h
h
g =
Ngoi ra,
oe
0
h
1
r =
Cc thng s h do nh sn xut cho bit.
Trong thc hnh, r
0
hay
oe
h
1
mc song song vi ti. Nu ti khng ln lm (khong
vi chc K tr li), trong mch tng ng, ngi ta c th b qua r
0
(khong vi trm
K).
B C
E
v
be
i
b
h
re
v
ce
h
ie
h i
fe b
oe
h
1
Hnh 41
v
ce
~
+
-
Mch tng ng n gin: (c th b r
0
hoc
oe
h

1
)

B
C
E
v
be
b
i
r

g
m
v
be
r
o
i
c
B
C
i
b
h
ie h
fe
i
b
i
c
oe
h
1
v
be
E
Hnh 42
Bi tp cui chng
1. Tn c V
C
, V
B
, V
E
trong mch:

2. Tnh I
C
, V
CE

3. Tnh V
B
, V
E
trong m

h in th phn c
trong mch in:
ch in:
12V
V
V
E
2V
E=1K
V
R
C
CC
V
V
RC=3K
EE
B
=100/Si
=100/Si
I
C
B
+6V
C
2K
R
R 1K
R
430K
E
+6V

C
, V
C
E
+12V
R
R
R 1K
B
V
BB
5K
2V
33K
=100/Si
V
E
V
B
V
C
CH
TRANSISTOR TRNG NG
(FIELD EFFECT TRANSISTOR)
Chng ta kho st qua transistor thng, c gi l transistor lng cc v s
dn n ca n da vo hai loi ht ti n a s trong vng pht v ht ti
in thiu s trong vng nn. transistor NPN, ht ti in a s l in t v ht ti
in iu s l l trng trong khi transistor PNP, ht ti in a s l l trng v ht ti
in thiu s l in t.
in tr vo ca B hn t cc E hoc cc B) nh, t v n vi
K, trong lc in tr ng n chn khng rt ln, gn nh v hn. L do l
BJT, ni nn pht lun lun c phn cc thun trong lc n chn khng, li khin
lun lun c phn cc n ch so vi Catod. Do , ngay t lc transistor BJT mi ra
i, ngi ta ngh n vic pht trin m sistor mi. iu ny dn n s ra
i c a transistor trng ng.
a phn bit hai loi transistor trng ng:
Transistor trng ng loi ni: Junction FET- JFET
Transistor trng ng loi c cng cch in: Isulated gate FET-IGFET hay
-
pha t tp cht dng lm thng l (knh) ni lin vng n ng thot. Mt vng p-
nm pha di thng l l thn v mt vng p nm pha trn thng l. Hai vng p v p-
ni chung vi nhau to thnh c c cng ca JF

NG 6
i in: ht ti i
th
ng JT (n i trm
vo ca
gh
t loi tran
T
metal-oxyt semiconductor FET-MOSFET.
Ngoi ra, ta cng kho st qua loi VMOS (MOSFET cng sut-Vertical chanel
MOSFET), CMOS v DMOS.
I. CU TO CN BN CA JFET:
M hnh sau y m t hai loi JFET: knh N v knh P.
Trong JFET knh N gm c hai vng n+ l hai vng ngun v thot. Mt vng n
gun v v
ET.

Thng l
(knh) N-

ng

Nu so snh vi BJT, ta thy: cc thot D tng ng vi cc thu C, cc ngun S tng
vi cc pht E v cc cng G tng ng vi cc nn B.
Hnh 1
Thn p- (c ni vi cng)
N+ N+
Vng Vng Vng
ngun thot cng
P
p+ p+
n-
n
S D
G
Tip xc kim loi
Knh p-
D
S
G
n+ n+
p-
p
S D
G
Tip xc kim loi
Knh n-
D
S
G
JFET Knh P
JFET Knh N
K hiu
Hnh 2
S (Source): cc ngun
D (Drain): cc thot
G (Gate): cc cng
JF
JFET knh P t

Cng ging nh transistor NPN c s dng thng dng hn transistor PNP do
d ng thng dng hn JFET knh P vi cng mt
l s FET knh N, vi JFET knh P, cc tnh cht cng tng
t.
II. T NG CA J
hi cha phn cc, do nng cht pha khng ng u trong JFET knh N nn ta
thy vng him rng thng l n- v th p vng thot v ngun n+.
ET knh N tng ng vi transistor NPN.
ng ng vi transistor PNP.
D
S
G
D
S
G
C
E
B
C
E
B
JFET
Knh N
JFET
K
BJT
NPN
PNP
BJT
nh P

Thot Thu
Ngun Pht
Cng Nn
Hnh 3
ng t hn tn s cao. JFET knh N c
do. Phn sau, ta kho
t
t J
C CH HO FET:
K
n p-, vng him h
n+
S
n+
D Knh n-
Gate
p
Thn p-
Vng him

Hnh 4


By gi, nu ta mc cc ngun S v cc cng G xung mass, ngha l in th
V
GS
=0V. iu chnh in th V
DS
gia cc thot v cc ngun, chng ta s kho st dng
in qua JFET khi in th V
DS
thay i.
vng thot n+ ni vi cc dng v vng cng G ni vi cc m ca ngun in
V
DS
nn ni PN vng thot c phn cc nghch, do vng him y rng ra (xem
hnh

Khi V
DS
cn nh, dng in t t cc m ca ngun in n vng ngun (to ra
dng I
S
), i qua thng l v tr v cc dng ca ngun in (to ra dng in thot I
D
).
Nu thng l c chiu di L, rng W v dy T th in tr ca n l:
V
v)

V

GS
= 0V
n+ n+
p-
S D
n-
p
G
V
DS
Ni P-N vng
thot c phn
cc nghch
Hnh 5
P Gate
Thn P- (Gate)
Knh n-
n+ thot
Vn m ng
I
D
Dn n t r
i ra khi vn
I
S
Dng in t t
ngun S i vo
thng l
i khi thng l v
g thot
g i
g hi r
Hnh 6
WT
. R = ; T
cht pha.

L
rong , n tr sut ca thng l. in tr t l hm s theo
nng

l i su

Hnh 7
Di L
S D G
Thng l c b dy T
B rng W

I (mA)
D
I
DSS
V
DS
(volt)
V
GS
= 0V
V
P
(Pinch-off voltage) 0
Dng in bo ha thot
i khng tuyn tnh
ngun
Vng tuy
ng thay
Vng bo ha
Vng in tr
n tnh
vng dng
in gn nh l hng s
Hnh 8
P Gate
Thn P- (Gate)
Nhng i ng lng cao trong di dn
in xuy him vo vng thot
Knh n-
n+ thot
Drain
n t c n
n qua vng
Vng him chm nhau
(thng l b nghn)
Nhng electron b ht v
cc dng ca ngun in

s no th hai
vng him chm nhau, ta ni thng l b nghn (pinched off).
Tr s V
DS
thng l bt u b n c gi l in th nghn V
P
(pinched off
voltage). tr s ny, ch c cc in t c nng lng cao trong di dn in mi c
sc xuyn qua vng him vo vng thot v b ht v c dng ca ngun in V
DS

to ra dng in thot I
D
.
u ta c tip tc tng V
DS
, dng in I
D
gn nh khng thay i v c gi l
dng in bo ho thot - ngun I
DSS
(ch : k hiu I
DSS
khi V
GS
=0V).
, nu ta phn cc cng-ngun bng mt ngun in th m V
GS
(phn cc
nghch), ta thy vng him rng ra v thng l hp hn trong trng hp V
GS
=0V. Do
in tr ca thng l cng ln hn.

Khi V
DS
cn nh (vi volt), in tr R ca thng l gn nh khng thay i nn
dng I
D
tng tuyn tnh theo V
DS
. Khi V
DS
ln, c tuyn khng cn tuyn tnh na do
R bt u tng v thng l hp dn. Nu ta tip tc tng V
DS
n mt tr
g n h
c
N
By gi
V
GS

n+ n+
p-
S D
n-
p
G
V
DS
Ni P-N vng
c
Hnh 10
thot c phn
c nghch

P Gate

n nh, I
D
tuyn tnh hi V
ng n, ngha V
DS
th hn p
V
GS
=0V v do , dng in bo ho I cng nh hn I .
s c gi l c tuyn ra ca JFET
mc theo kiu cc ngun chung.

hi V
GS
cng m, dng I o ho cng nh. Khi V
GS
m n mt tr no , vng
him chim gn nh ton b thng l v cc in t khng cn nng lng vt
qua c v khi I
D
= 0. Tr s ca V
G
gi l V
GS(off)
. Ngi ta chng minh
c tr s ny bng v i in th nghn.
Thn P- (Gate)
mt tr V
DS
khi
GS
m hn
Hn
Khi V
DS
c cng tng theo V
DS
, nhng k
DS
ln, thng l b
hn nhanh h l tr s ng l nghn nh trong trng h
D DSS
Chm c tuyn I
D
=f(V
DS
) vi V
GS
l thng

K
D
b
S
lc
Knh n-
n+ thot
I
D
V
DS
GS
0
Thng l hp
hn nn in
tr ln hn. C
ngha l I
D
v I
S
nh hn cng
V < 0
V
GS
=
I
DSS
Dng
bo
D

m
V
P
i tr bo
im
ha I
gi
V
h 11
V
DS
ng v
ha g
P Gate
Thn P- (Gate)
Thng l n-
n+ thot
Thng l nghn
GS
v thng l hp
hn
tr V
DS
thp
hn khi V m

V
DS
(volt)
V
GS
= -4V
V
GS
= -3V
V
GS
= -2V
V = -1V
GS
V
GS
= 0V
I
D
(mA)
V
DS
=V
P
=8V
0
V
GS
= V
GS(off)
= -8V
c tuyn
|V
DS
|

= |V
P
|-|V
GS
|
Vng bo ha (vng dng
in hng s)
Hnh 12
P ) off ( GS
V V =
V V
p
chnh l hiu th phn cc ngc cc ni P-N va cho cc vng him
chm hau. V vy, trong vng bo ho ta c: n
P GS DS
V V V = +
ni cng ngun c phn cc nghch, dng in I
G
chnh l dng in r ngc
nn rt nh ng in chy vo cc thot D c xem nh bng dng in ra khi
cc ngun S .

ET knh N c I
DSS
=20mA v V
GS(off)
=-10V.
S GS
=0V? Tnh V
DS
bo ho khi V
GS
= -2V.
Gii:
V
, do d
. I
D
# I
S
n+ n+
D
Gate
p
Thn p-
Khng c t ti in di chuyn qua thng l (I
D
= I

So snh vi BJT, ta thy:

Th d: mt JF
Tnh I khi V
Khi V
GS
=0V I
D
=I
DSS
=20mA v I
D
=I
S
=20mA
Ta c: V 10 V V
) off ( GS P
= = v V 8 2 10 V V V
GS P DS
= = =
S
Knh n-
h
S
= 0)
Hnh 13
D S C E
G B
I
G
(r) 0
V
CB
V
BE
V
GS
I I
I
C

V
CE
E S
I
E
I
D
I
S
-
+
+
+
-
-
-
V
DS + -
+
I
B
nh
Hnh 14
III. C TUY
mon-source) v cc
i BJT NPN, ta thy c s tng ng nh sau:
Cc cc Cch mc
N TRUYN CA JFET.
Cng ging nh BJT, ngi ta cng c 3 cch rp ca FET (JFET v MOSFET):
mc kiu cc cng chung (common-gate), cc ngun chung (com
thot chung (common-drain).

D
S
G
Tn hiu
vo
Tn hiu
r
Ngun chung
So snh v
FET BJT
FET
BJT
C thot D
Cc ngun S
C cng G
Cc thu C
Cc pht E
Cc nn B
Cc cng chung
Cc ngun chung
Cc thot chung
Cc nn chung
Cc pht chung
Cc thu chung
c
c
Ngi ta chng minh c khi V
DS
c tr s lm nghn thng l (JFET hot ng
trong vng bo ho), I
D
v V
GS
tho mn h thc:
2
) off ( GS
GS
DSS D
V
V
1 I I
= hay
2
P
GS
DSS D
V
V
1 I I

+ =
Phng trnh y i l phng trnh truyn ca JFET. Cc thng s I
D
v
V
GS(off)
c nh s t.
l: V
GS
v V
GS(off)
m trong JFET thng l n v dng trong thng l p.
Ngi ta cng c th biu tha i c n thot I
D
n th ng
ngun V
GS
trong ng mt c tuyn gi l c tuyn truyn bng cch v
ng biu din ca phng trnh truyn
n c g
n xut cho bi
th s y a dng i theo i c
vng bo ho b
trn.

D S
G
Tn hiu
vo
Tn hiu
Cng chung

ra a
S
D
G
Tn hiu
vo
Tn hiu
ra
Thot chung
Hnh 15
I
V V
V
GG
V
DD

+ -
+
-
-
+
G
D
S
V
GS
+
-
+
-
V
DS
I
D
Hnh 16


IV.
in tr (tc dn in) ca thng l ca cht bn
dn.
tng, vng him gim, do rng ca thng l tng ln, do in
tr c
in tr (tc dn in) ca thng l ca cht bn
dn.
tng, vng him gim, do rng ca thng l tng ln, do in
tr c

2 4 6 8
V
DS
(volt)
V
GS
= -4V
V
GS
= -3V
V
GS
= -2V
V
GS
= -1V
V
GS
= 0V
I
D
(mA)
V
P
0

NH HNG CA NHIT TRN JFET.
Nh ta thy trong JFET, ngi ta dng in trng kt hp vi s phn cc
nghch ca ni P-N lm thay i
NG CA NHIT TRN JFET.
Nh ta thy trong JFET, ngi ta dng in trng kt hp vi s phn cc
nghch ca ni P-N lm thay i
cng nh BJT, cc thng s ca JFET cng rt nhy i vi nhit , ta s kho st
qua hai tc ng chnh ca nhit :
Khi nhit
cng nh BJT, cc thng s ca JFET cng rt nhy i vi nhit , ta s kho st
qua hai tc ng chnh ca nhit :
Khi nhit
a thng l gim. (I
D
tng)
Khi nhit tng, linh ng ca cc ht ti in gim (I
D
gim)
Do thng l tng rng theo nhit nn V
GS(off)
cng tng theo nhit . Thc
nghim cho thy
a thng l gim. (I
D
tng)
Khi nhit tng, linh ng ca cc ht ti in gim (I
D
gim)
Do thng l tng rng theo nhit nn V
GS(off)
cng tng theo nhit . Thc
nghim cho thy
P ) off ( GS
V hay V tng theo nhit vi h s 2,2mV/1
0
C.
T cng thc:
2
) off ( GS
GS
DSS D
V
V
1 I I
=
Cho thy tc dng ny lm cho dng in I
D
tng ln. Ngoi ra, do linh ng ca
ht ti in gim khi nhit tng lm cho in tr ca thng l tng ln nn dng in
I
DSS
gim khi nhit tng, hiu ng ny lm cho I
D
gim khi nhit tng.
Tng hp c hai hiu ng ny, ngi ta thy nu chn tr s V
GS
thch hp th dng
thot I
D
khng i khi nhit thay i. Ngi ta chng minh c tr s ca V
GS
l:
V
GS
= V
GS(off)
= -8V
V
GS(off)
-8 -6 -4 -2
V
GS
= -6V
12
9
6
3
c tuyn
truyn
tuyn
ra
c
ng
Hnh 17
V 63 , 0 V
P S
= V
G
in th nghn nhit bnh thng.
Cc y m t nh hng a nhi trn cc c tuyn ra, c tuyn
truyn v c tuyn ca dng I
D
theo nhit h V lm thng s.

c ht ti in
trong
leaka
GSS GSS

phn c nghch ni P-N gia cc cng v cc ngun. Dng in ny l dng in r
cng-ngun khi ni tt cc ngun vi cc thot. Dng I
GSS
tng gp i khi nhit tng
ln 10
0
C.
vi V
P
l
hnh v sau c t
k i
GS
I
D
0
V
GS
= 0
V
GS
= -1V
|V
GS
| = |V
P
|-0,63V
I
D
gim
V
DS
25
0

45
0
I
D
tng
Hnh 18

0 -100 -50 0 50 100
150
I
D
I
D
I
(V
DS
c nh)
-55
0
C 25
0
C +150
0
C

Ngoi ra, mt tc dng th ba ca nhit ln JFET l lm pht sinh c
vng him gia thng l-cng v to ra mt dng in r cc cng I
GSS
(gate
ge current). Dng I c nh sn xut cho bit. dng r I chnh l dng in
c
DSS
|V
GS
| = |V
P
|-0,63V
V
GS(off V
GS
t
0
C
|V
GS
| = |V
P
|-0,63V
V
GS
= -1V
V
GS
= -0V
Hnh 19
10
) 25 (
0 0
2 ) 25 ( ) (

=
t
GSS GSS
C I C t I

V. MOSFET LOI HIM (DEPLETION MOSFET: DE
MOSFET)
Ta thy rng khi p mt in th m vo J nh N th vng him rng ra. S gia
tng ca vng him lm cho thng l hp li v in tr ca thng l tng ln. Kt qu
sau cng l to ra dng in I
D
nh hn I
DSS
.
By gi, nu ta p in th dng V
GS
vo JFET knh N th vng him s p li
(do phn cc thun cng ngun), thng l rng ra v in tr thng l gim xung, kt
qu l dng in n h .
Trong cc ng dng thng thng, ngi ta u phn cc n ch ni cng ngu
(V
GS
m i vi JFET knh N v dng i vi JFET knh P) v c gi l iu hnh
theo kiu him.
JFET cng c th iu eo ki ng (V
GS
dn i JFET knh N v m
i vi JFET knh P) nhng t khi c ng dng, v mc ch ca JFET l tng tr vo
ln, ngha l dng in I
G
cc cng - ngun trong JFET s lm gim tng tr vo, do
thng thng ngi ta gii hn tr s phn cc thun ca ni cng - ngun t
0,2V (tr s danh nh l 0,5
V
GG
G
D
S
I
GSS
V
DS
= 0
Hnh 20
V
V).
i a l
g i v u t hnh th
n gh
n I
DSS
I
D
s l
h
FET k

Tuy JFET c tng tr vo kh l ng cn kh nh so vi n chn khng.
tng tng tr vo, ngi ta to i transistor trng khc sao cho cc cng
cch in hn cc ngun. Lp cch in l Oxyt bn dn SiO
2
nn transistor c gi l
MOS ET.
a phn bit hai loi MOSFET: MOSFET loi him v MOSFET loi tng.
nh sau y m t cu to cn bn MOSFET loi him (DE - MOSFET) knh N v knh
.

n nhng c
mt lo
F
T
H
P

V
GG
G
D
I
S
GSS
V
DS
V
DD
+
-
V
GS
+
Phn cc kiu
him
Phn cc kiu
tng
(Ti a 0,2V)
-
+
-
+
-
0 0 -4V
V
GS
V
GS
= 0,2V
V
GS
= 0V
V
GS
= -1V
V
GS
= -2V
S
= -3V
V
DS
I
D
I
D
I
DSS
iu hnh
kiu tng
iu hnh
kiu him
0,2V
Hnh 21
JFET knh N
+
V
GG
G
D
S
V
DS
V
DD
V
GS
-
+
Phn cc ki
-
u
him
Phn cc kiu
tng
(Ti a 0,2V)
-
+
-
+
V
GG
I
D
Hnh 22
V
G

Thn p-
Knh n-
n+

n+
Ngun
S
Cng
G
Thot
D
Tip xc
kim loi
SiO
2
G
D
S
Thn U
G
D
S
Thn ni vi
ngun
K
DE-MOSFET knh N
Hnh 23
hiu
Thn n-
Knh p-
p+ p+
Ngun
S
Cng
G
Thot
D
Tip xc
kim loi
SiO
2
G
D
Th
S
n U
G
Thn ni vi
ngun
Hnh 24
K hiu
D
S
DE-MOSFET knh P
Ch rng DE - MOS thot D, cc ngun S, cc cng G v thn
U (subtrate). Trong cc ng dng thng thng, thn U c ni vi ngun S.
SFET hot ng, ngi ta p in V
DD
vo cc thot v cc
ngun ( ng ca ngu in ni vi cc thot D v cc m ni vi cc ngun S
trong DE-MOSFET knh N v ngc li trong DE-MOSFET knh P). in th V
GS
gia
cc c ngun c th m (DE-MOSFET knh N iu hnh theo kiu him) hoc
dng SFET knh iu hnh theo kiu tng)

FET c 4 cc: cc
DE-MO
cc d
mt ngun
n
ng v cc
(DE-MO N

S
Thn p-
n+
Knh n-

G

D
SiO
2
- V
DD
+
+ V
GG
-
n+
Thn p-
Knh n-
n+
thot
Vng him do cng m y cc in t
v thot dng ht cc in t v n
Tip xc kim
loi cc cng
Vng him gia
phn cc nghch p-
v vng thot n+
iu
hnh
theo
kiu
him
Hnh 25


Khi V
GS
= c cn ng c ngu di chuyn gia cc m
ca ngun in V qua knh n- n vng thot (c ca ngun in V
DD
) to ra
dng in thot I
D
. Khi in th V
DS
cng ln th in tch m c g G cng nhiu (d
cng G cng in th vi ngun S) cng y cc in t trong knh n- ra xa lm cho
vng him rng thm. Khi vng him va chn ngang knh th knh b nghn v dng
in thot I
D
t n tr s bo ho I
DSS
.
Khi V
GS
cng m, s nghn xy ra cng sm v dng in bo ho I
D
cng .
Khi V
GS
dng (iu hnh theo kiu tng), in tch dng ca cc cng h
in t v mt tip xc cn vng him hp li tc thng l g ra, in tr th
l gim nh. iu ny lm cho dng thot I
D
ln hn trong trng h
GS
= 0V.
V cc cng cch in hn khi cc ngu ca DE-MOSFET ln
hn JFET nhiu. Cng v t iu hnh theo kiu tng, ngun V
GS
c th n hn
0,2V. Th nhng ta phi c gii hn ca dng l I
DMAX
. c tuyn truyn v c
tuyn ng ra nh sau:

Thn p-
n-
n+

S

G

D
SiO
2
- V
DD
- V
GG
+
n+
in t tp trung
di sc ht ngun
dng ca cc cng
lm cho in tr
thng l gim
iu
hnh
theo
kiu
tng
Hnh 26
+
0V (c g ni th vi c n), in t
c dng
DD
n o
nh
t cc
ng g nhiu, rn
p V
n nn tng tr vo
l h, khi
I
D
gi
DE-MOSFET knh N
0 0
V
GS(off)
< 0
V
GS
V
GS
= +1V
V
GS
= 0V
V
GS
= -1V
V
GS
= -2V
V
GS
= -3V
V
DS
(volt)
I
D
(mA)

vy, khi ho ng ht JFET ch c tng tr vo ln hn
v dng r I
GSS
JFET.
VI. OS ANCEMENT MOSFET:
E-MOSFET)
MOSFET loi tng cng c hai loi: E-MOSFET knh N v E-MOSFET knh P.
un S.
nh v sau y:
I
DSS
iu hnh
kiu tng
iu hnh
kiu him
2V
Hnh 27
V
GS
= +2V
I
Dmax
c tuyn
truyn
c tuy
ng ra
n
I
D
(mA)
Nh t ng, DE-MOSFET gi
nh hn nhiu so vi
M FET LOI TNG (ENH
V mt cu to cng ging nh DE-MOSFET, ch khc l bng thng khng c
thng l ni lin gia hai vng thot D v vng ng
M hnh cu to v k hiu c din t bng h
0 0
V
V
GS(off)
> 0
GS
V
GS
= -1V
I
D
(mA)
V
GS
= 0V
V
GS
= +1V
V
GS
= +2V
V
GS
= +3V
V
DS
(volt)
I
DSS
iu hnh
kiu tng
28
DE-MOSFET knh P
iu hnh
kiu him
-2V
V
GS
= -2V
I
Dmax
c tuyn
truyn
I
D
(mA)
c tuyn
ng ra
Hnh
Thn p-
n+ n+
Ngun Cng Thot
D
Tip xc
kim loi
S G

SiO
2
G
D
S
Thn U
G
D
Thn ni vi
ngun
K hiu
E-MOSFET knh N
Hnh 29
Thn U
S
Thn n-
p+ p+
Ngun
S
Cng
G
Thot
D
Tip xc
kim loi
SiO
2
G
D
S
Thn U
G
D
S
Thn ni vi
ngun
K hiu
E-MOSFET knh P
Hn
n U
h 30
Th

Khi V
GS
< 0V, ( E-MOSFET knh N), do khng c thng l ni lin gia hai vng
thot ngun nn mc d c ngun in th V p vo hai cc thot v ngun, in t
I
D
# 0V). Lc ny, ch c mt
hi V
GS
>0, mt in trng c to ra vng cng. Do cng mang in tch
dng nn ht cc in t trong nn p- (l ht ti in thiu s) n tp trung mt i
din a vng cng. Khi V
GS
ln, lc ht mnh, cc in t n tp trung nhiu v to
thnh mt thng l tm thi ni lin hai vng ngun S v thot D. in th V
GS
m t
dng in thot I
D
bt u tng c gi l h thm cng - ngun (gate-to-source
threshold voltage) V
GS(th)
. Khi V
GS
tng ln hn V
GS(th)
, dng in thot I
D
tip tc tng
nhanh.
gi ta chng minh c rng:

rong : I
D
l dng in thot ca E-MOSFET
K l hng s vi n v
DD
cng khng th di chuyn nn khng c dng thot I
D
(
dng in r rt nh chy qua.
Thn p-
n+

S

G

D
SiO
2
- V +
DD
V
GS
= 0V
n+
Mch tng ng
Hnh 31

K
c
in t
N
[ ]
2
) th ( GS GS D
V V K I =
T

2
V
A

V
GS
l in th phn cc cng ngun.
V
GS(th)
l in th thm cng ngun.
thng c tm mt cch gin tip t cc thng s do nh sn xut cung
cp.
Th d: Mt E-MOSFET knh N c V
GS(th)
=3,8V v dng in thot I
D
= 10mA khi
V
GS
= 8V. Tm dng in thot I
D
khi V
GS
= 6V.
Gii: trc tin ta tm hng s K t cc thng s:
Hng s K
[ ] [ ]
2
4
3
V
A
10 . 67 , 5
10 . 10 I

=
GS
l:
2 2
) th ( GS GS
D
8 , 3 8 V V
K
=
Vy dng thot I
D
v V
[ ] [ ]
2 4
D
I =
2
) th ( GS GS
8 , 3 6 10 . 67 , 5 V V K =

I = 2,74 mA

D

Thn p-
n+

S

D
2
G
SiO
- V
DD
+
- V
GG
+
n+
Thng l tm thi
V
GS
V
GS(th)

0
V
GS
0
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 3V
V
GS
= 2V
DS
(volt)
I
D
(mA)
V
G
32
S(th)
Hnh
V = 7V
GS
I
Dmax
c tuy
tr
c tuyn
ng
I A)
V
max GS
D
(m
ra
n
uyn
V

VII. XC NH IM IU HNH:
Ta xem m hnh ca mt mch khuch i tn hiu nh dng JFET knh N mc theo
kiu cc ngun chung
~
C
2
C
1
R
D
= 820
R
G
100K
v
0
(t)
v
GS
(t)
+
-
+V
DD
= 20V
-V
GG
= -1V
Hn

h 33

Mch tng ng mt chiu (tc mch phn cc) nh sau:
ng ging nh transistor thng (BJT), xc nh im iu hnh Q, ngi ta
dng 3 bc:
p dng nh lut Krichoff mch ng vo tm V
GS
.

C
R
D
= 820
V
GS

+
-
V
DD
= 20V
Hnh 34
V
GG
= -1V
+
-
V
DS

I
GSS

I
D

R
G
100K
Dng c tuyn truyn hay cng thc:
2
) off ( GS
GS
DSS D
V
V
1 I I
= trong trng hp DE-

MOSFET hoc cng thc [ ]
2
) th ( GS GS D
V V K I = trong trng hp E-MOSFET xc nh
dng
g nh lut Krichoff mch ng ra tm hiu in th V
DS
.
, ta th n hnh trn:
in thot I
D
.
p dn
By gi ng dng vo mch i
Mch ng vo, ta c:
0 V I R V
GS GSS G GG
= +
Suy ra,
GSS G GG GS
I R V V + =
V dng in I rt nh nn ta c th b qua.
GS
y l phng trnh b n ng phn cc (bias line) v giao im ca ng
thng ny vi c tuyn truyn l im iu hnh Q.
Nh c tuyn truyn, ta c th xc nh c dng thot I
D
.

- xc nh in th V
DS
, ta p dng nh lut Kirchoff cho mch ng ra:
V
DD
= R
D
I
D
+ V
DS

V
DS
= V
DD
R
D
I
D

y l phng trnh ca ng thng ly in tnh. Giao im ca ng thng ny
vi c tuyn ng ra vi V
GS
= -V
GG
= -1V chnh l im tnh iu hnh Q.
GSS
Nh vy,
GG GS
V V
Trong trng hp trn, V = -1
iu di

0 0
V
GS(off)

V
GS
V
GS
= 0V
V
GS
= -1V
V
GS
= -2V
V
GS
= -3V
V
GS
= -4V
V
DS
I
D
I
D
I
DSS
Hnh 35
I
DSS
I
D
I
D
-1 V
DS(off)
=V
DD
V
DS
Q
D
DD
) sat ( D
R
V
I =
ng thng ly in
ng phn cc
V
GS
= -V
GG
= -1V
Q
VIII. FET VI TN HIU XOAY CHIU V MCH
TNG NG VI TN HIU NH
Gi s ta p mt tn hiu xoay chiu hnh sin v (t) c bin in th nh l 10mV
vo ng vo ca mt mch khuch n c ng JFET knh N

C
1
v C
2
l 2 t lin lc, c chn sao cho c dung khng rt nh tn s ca tn
hiu v c th c xem nh ni tt tn s tn hiu.
Ngun tn hiu v
s
(t) s chng ln in th phn cc V
GS
nn in th cng ngun
v
GS
(t) thi im t l:
v
GS
(t) = V
GS
+ V
gs
(t)
= -1V + 0,01sin t (V)

gun tn hiu c in th nh nh nn in th cng ngun vn lun lun m.
Nh c tuyn truyn, chng ta thy rng im iu hnh s di chuyn khi V
GS
thay I
s
i cc ngu hung d
~
C
2
D
= 820
R
G
100K
v
0
(t)
v
GS
(t)
+
-
+V
DD
= 20V
GG
= -1V
Hnh 36
v
S
(t)
v
DS
(t)
+
-
-V
R
C
1

v
S
(t)
t
0
-10mV
+10mV

v
GS
(t)
t
-1V
-1,01V
-0,99V
0
Hnh 37

N

theo tn hiu. thi im khi V
GS
t m hn, dng thot i
D
(t) tng v khi V
GS
m nhiu
hn, dng thot i (t) gim. Vy dng in thot i (t) thay i cng chiu vi v
GS
(t) v c
tr s ,25mA). gia tng ca i
D
(t) v
gim ca i (t) bng nhau vi tn hiu nh (gi s l 0,035mA). (Xem hnh trang sau).
m thay i hiu s in th gia cc thot v
cc ngun.
Ta c v
DS
(t) = V
DD
i
D
(t).R
D
. Khi i
D
(t) c tr s ti a, th v
DS
(t) c tr s ti thiu v
ng li. iu ny c ngha l s thay i ca v
DS
(t) ngc chiu vi s thay i ca
dng i
D
(t) tc ngc chiu vi s i ca hiu th ng vo v
GS
(t), ngi ta bo in
th ng ra ngc pha - lch pha 180
o
in th tn hiu ng vo.
i l t s nh i nh ca hiu th
tn hiu ng ra v tr s nh ca hiu th tn hiu ng vo:
D D
quanh dng phn cc I
D
tnh (c gi s l 12
D
S thay i dng in thot i
D
(t) s l
c
thay
so vi
Ngi ta nh ngha li ca mch khuch
nh i
) t ( v
S
V
Trong trng hp ca th d trn:
) t ( v
A
o
=
P P
o
P P
S
o
V
V 02 , 0
180 V 0574 , 0
) t ( v
) t ( v
A

= =
=2,87 -180
o
du - biu din lch pha 180
o
A
V
Ngi ta dng

V
GS
0
I
D
(mA)
Q
-1V
12,285mA

-1,01V -0.99V
V
GS(off)
12,215mA
R
D
= 820
v
0
(t) = v
ds
(t)
V
DD
= +20V
i
D
(t)
C
2 v
DS
(t)
v
S
(t)
t
0,01V
1V
0
-0,0

t 0
-1,01V
-1
-0,99V
v
GS
(t)

t
0
i
D
(t) (mA)
12,215
12,250
12,285

t
0
9,9837
v
DS
(t) (V)
9,9263
9,9550
v
0
(t)
t
0,0287V
-0,0287V
0
Hnh 38

* Mch tng ng ca FET vi tn hiu nh:
Ngi ta c th coi FET nh mt t c c dng in v in th ng vo l v
gs
v
i
g
. Dng in v in th ng ra l v
ds
v i
d

c
i
g
v
gs
v
ds
i
d

Hnh 39
Do dng
ig
rt nh nn FET c tng tr ng vo l:
g
gs
i
r =
rt ln
v
Dng thot i
d
l mt h Vi tn hi
n thin quanh im i
m s theo v
gs
v v
ds
. u nh (dng in v in th
ch bi u hnh), ta s c:
Q
DS
DS
D
Q
gs
GS
D
D
v
v
i
v
v
i
i
=
Ngi ta t:

i
g
D
= v
i 1
D
=
v
Q GS
m
v r
Q DS o

Ta c: ) g v
o ds
= + =
o o
gs m d
r
1
at the (co
r
1
v g i
v
gs
= r
.i
g
Cc phng trnh ny c din t bng gin sau y gi l mch tng ng
xoay

Ring i g mch tng ng
ngi ta c th b

chiu ca FET.

vi E-MOSFET, do tng tr vo r
rt ln, nn tron
r

v
gs
D
S
r

g
m
v
gs
r
0 v
ds
i
d
Hnh 40
G
G D
i
d
v
gs
v
g
m
v
gs
r
0
ds
S

IX. IN DN TRUYN (TRANSCONDUCTANCE) CA
JFET V DEMOSFET.
ng tng t nh BJT, mt cch tng qut ngi ta nh ngha in dn truyn
ca FET l t s:
C
) t ( v
) t ( i
g
gs
d
m
=
ca tip
tuyn v

in dn truyn c th c suy ra t c tuyn truyn, chnh l dc
i c tuyn truyn ti im iu hnh Q
Hnh 41
Q
V
GS
(volt)
I
D
(mA)
dc ti im I
D
= I
DSS
l g
mo
V
GS
I
D
V
GS(off)
I
DSS dc ti im Q l:
) t ( gs
) t ( d
GS
D
GS
D
m
v
i
V
I
V
dI
g =
=
V mt ton hc, t phng trnh truyn:
2
) off ( GS
GS
DSS D
V
V
1 I I
=
2
GS
DSS
V
V
1 I

=
) off ( GS
D
I
Hnh 42
d
=
Ta suy ra:
2
GS
DSS
D
m
V
V
1 I
dV
dI
g
= =
) off ( GS GS

= =
) off ( GS
GS
) off ( GS
DSS
m
V
V
1
V
I 2
g
r s ca g
m
khi V
GS
= 0volt (tc khi I
D
=I
DSS
) c gi l g
mo
.
y:
T
) off ( GS
DSS
mo
V
I 2
g V =
ta thy:
=
) off ( GS
GS
mo m
V
V
1 g g T
rong : g
m
n truyn ca JFET hay DE-MOSFET v
g
mo
: l g
m
khi V
GS
= 0V
V
GS
: in th phn cc cng - ngun
V
GS(off)
: in th phn cc cng - ngun lm JFET hay DE-MOSFET ngng.
cng thc:
: l in d i tn hiu nh T
2
) off ( GS
GS
DSS D
V
V
1 I I
= 1 Ta suy ra: Ngoi ra t

) off ( GS
GS
DSS
D
V
V
I
I

y:
DSS
D
mo m
I
I
g g = V
Phng trnh trn cho ta thy s lin h gia in dn truyn g
m
v
I
i dng in thot
V
GS(off)
do nh sn
xut cung c
ng thc tnh dng in thot I
D
theo V
GS
ca E-MOSFET khc vi JFET v
DE-MOSFET nn in dn truyn ca n cng khc.
cng thc truyn ca E-MOSFET

Ta c:
D
ti im iu hnh Q. g
mo
c xc nh t cc thng s I
DSS
v
p.
X. IN DN TRUYN CA E-MOSFET.
Do c
T
[ ]
2
) th ( GS GS D
V V K I =
[ ] [ ]
2
) th ( GS GS
GS GS
D
m
V V K
dV
d
dV
dI
g = =
[ ]
) th ( GS GS m
V V K 2 g =
) th ( GS
D
GS
V
K
I
V + = Ngoi ra:
D m
KI 2 g = Thay vo trn ta c:
Trong :
g
m
: l in dn truyn ca E-MOSFET cho tn hiu n
K: l hng s vi n v Amp/volt
2
c thot D
h
I
D
: Dng din phn cc c
Ta thy g
m
ty thuc vo dng in thot I
D
, nu gi g
m1
l in dn truyn ca E-
MOSFET ng vi dng thot I
D1
v g
m2
l in dn truyn ca E-MOSFET ng vi dng
thot I
D2
Ta c:
1 D 1 m
KI 2 g = v
2 D 2 m
KI 2 g = nn:
1 D
2 D
1 m 2 m
I
I
g g =

I
D
(mA)
I
D1
Q
I
Dmax
[ ]
2
) th ( GS GS D
V V K I =
dc ti Q l g
m1

V
GS(th)
0
V
GS
(volt)

XI. TNG TR VO V TNG TR RA CA FET.
Hnh 43
- Ging nh BJT, ngi ta cng dng hiu ng Early nh ngha tng tr ra ca
FET ( vng bo ha, khi V
DS
tng, dng in I
D
cng hi tng v chm c tuyn ra
cng hi t ti mt im gi l in th Early).
Nu gi V
A
l in th Early ta c:
FET cua ra tr Tong : r
o
D
A
o
I
V
r =
r
o
nh vy thAy i theo dng thot I
D
v c tr s khong vi M n hn
10M
- Do JFET thng c dng theo kiu him (phn cc nghch ni cng - ngun)
nn t ng tr vo ln (hng trm M). Ring E-MOSFET v DE-MOSFET do cc cng
cch in hn khi cc ngun nn tng tr vo rt ln (hng trm M). Kt qu l ngi
ta c th xem gn ng tng tr vo ca FET l v hn.
Vi FET : r

0
V
DS
(volt)
Early voltage
I
D
(m A) V
GS
Hnh 44

Trong cc mch s dng vi tn hiu nh ngi ta c th dng mch tng ng
cho FET nh hnh (a) hoc hnh (b). Nu ti khng ln lm, trong mch tng ng
nh 45

XII. CMOS TUYN TNH (LINEAR CMOS).
mt E-MOSFET knh N mc nh hnh sau
y t
ht ra n c cu trc nh sau:
i ta c th b c r
o
ng

H

Nu ta c mt E-MOSFET knh P v
a c mt linh kin t hp v c gi l CMOS (Complementary MOSFET).

T
v
G
S
r

g
m
v
gs
r
0 v
ds
i
Hnh 45 (a)
gs
D
d
v
gs
D
S
g
m
v
gs
r
0 v
ds
i
d
Hnh 45 (b)
v
gs
G
D
S
g
m
v
gs v
ds
i
d
Hnh 45 (c)
G
G
1
S
1
D
1
G
2
2
S
2
D
v
i
(t) v
0
(t)
knh P
Q
Q
1
E-MOSFET
Q
2
E-MOSFET
knh N
1
Q
2
Hnh 46

Cu trc CMOS c dng rt nhiu trong IC tuyn tnh v IC s
+ By gi ta x h trn, p ng c tn hiu
vo c dng xung vung nh hnh v. Mch c ng dng lm cng o v l tng
cui ca OP-AMP (IC thut ton).
v
GS
(t)=5V nn in th ng ra v
o
(t)=0V.
0V (t t
1
), E-MOSFET knh P dn in mnh (v v
GS
(t) = -5V) trong lc
E-MOSFET knh N khng dn in (v v
GS
(t) = 0V) nn in th ng ra v
o
(t)=V
DD
=5V.

t mch cn bn n ta th xem a CMOS khi
ny
- Khi v
i
= 5V (0 t t
1
); E-MOSFET knh P ngng v v
GS
(t)=0V, trong lc E-
MOSFET knh N dn mnh v
- Khi v
i
(t)=

n+ n+
S
2
p-
G
2

D
2
SiO
2
Hnh 47
Thn n-
p+ p+

D
1
S
1
G
1
G
S
1
D
1
V
DD
= 15V
1
G
2
D
2
S
2
v
i
(t) v
0
(t)
Q
1
Q
2
v
i
(t)
t
0
5V
t
1
v
o
(t)
t
0
5V
t
1
Hnh 48

Nh vy, tc dng ca CMOS l mt mch o (inverter)
Ta xem mt mch khuch i n gin dng CMOS tuyn tnh:

G
1
S
1
D
1
G
2
D
2
V

S
2

v
i
(t) v
0
(t)
Q
1
P
Q
2
N
Hnh 49

V
V
V
DD
GG
5 , 7
2
= =
- Khi v
i
(t) d OSFET knh N dn in mnh hn v E-MOSFET knh P
bt u dn in y o v
o
(t) gim.
- Khi v
i
(t) dng, E-MOSFET knh P dn in m MOSFET knh N
bt u dn in yu hn, nn v
o
(t) tng.
Nh vy ta th u ng vo v ng ra ngc pha nhau (lnh pha
III. MOSFET CNG SUT: V-MOS V D-MOS.
Cc transistor trng ng (JFET v MOSFET) m ta kho st trn ch thch
p cho cc mch c bin tn hiu nh nh tin khuch i, trn sng, khuch i cao
n, trung tn, dao ng nm 1976, ngi ta pht minh ra loi transistor trng c cng
ut va, n ln vi kh nng dng thot n vi chc ampere v cng sut c th ln
n vi chc Watt.
1. V-MOS:
Tht ra y l mt loi E-MOSFET ci tin, cng l khng c sn thng l v iu
nh theo kiu tng. s khc nhau v cu trc E-MOSFET v V-MOS c trnh by
ng hnh v sau:

ng, E-M
u hn. D
nh hn v E-
y tn hi 180 )
o
X
h
t
s
h
b
DD
= +15V
V 5 , 7
2
V
DD
GG
= =
v
i
(t)
t
0
v
o
(t)
0
t
V

Khi V
GS
dng v ln hn V
GS(th)
, thng l c hnh thnh dc theo rnh V v
ng electron s chy thng t hai ngun S n cc thot D. V l do ny nn c gi l
-MOS (Vertical MOSFET).
2. D-MOS:
khu

Cc c tnh hot ng ca V-MOS v D-MOS cng ging nh E-MOSFET. Ngoi
ra, cc c im ring ca V-MOS v D-MOS l:
Thng l s
hnh thnh
p- thn
n+ n+
Ngun Cng Thot
SiO
2
d
V
Cng l mt loi E-MOSFET hot ng theo kiu tng, ng dng hin tng
ch tn i (double-diffused) nn c gi l D-MOS. C cu trc nh sau:
S G D
Hnh 50
E-MOSFET knh N
Thng l s
hnh thnh
Ngun
S
Cng
G
SiO
2
Ngun
S
n+
n-
n+ n+
p p
Thot
D
V-MOS knh N
n+ n+
Thn n+
n-
p+ p+
Ngun
S
Cng
G
Ngun
S
Thot D
DMOS knh N
Thng
l s
hnh
thnh
Hnh 51
- in tr ng r
ds
khi ho
- C th khuch i cng
- Di thng ca mch khu
t ng rt nh (thng nh hn 1)
sut tn s rt cao
ch i cng sut c th ln n vi chc MHz

- V-MOS v D-MOS cng c knh N v knh P, nhng knh N thng dng hn
- V-MOS v D-MOS cng c k hiu nh E-MOSFET
H FET c th tm tt nh sau
FET
JFET MOSFET
JFET
knh N
JFET
Knh P
DE-MOSFET
Kiu him + tng
E-MOSFET
Kiu tng
DE-MOSFET
Knh N
DE-MOSFET
Knh P
E-MOSFET
nh N K
E-MOSFET
Knh P
V-MOS
nh N K
D-MOS
Knh N
CMOS
V-MOS
Knh P
D-MOS
Knh P
Bi tp cui chng

2. Trong m in sau, tnh in th phn cc V v in dn truyn g
m
.

3. Trong mch in sau, tnh in th phn cc V
D
, V
G
. Cho bit E-MOSFET c h s
1. Tnh V
D
, v in dn truyn g
m
trong mch:

+12V
R
G
5K
E
D
ch
D
1K R 1M
R
I
DSS
= 4mA
V
GS(off)
= -4V
V
D
D
+12V
R
G
5K
2V
V
D
1M
R
I
DSS
= 4mA
V
GS(off)
= -4V

=
2
V
1 k v V
mA

GS(th)
= 3V.

24V

G
D
5K

2M
V
V D
R
10M
24V
CHNG VII
P BN DN PNPN V
I. S
t bi cng silicium. Cc tp xc kim loi c to
ra cc cc Anod A, Catot K v cng G.

LINH KIN C BN L
NHNG LINH KIN KHC
CR (THYRISTOR SILICON CONTROLLED
RECTIFIER).
1. Cu to v c tnh:
SCR c cu to bi 4 lp bn dn PNPN (c 3 ni PN). Nh tn gi ta thy SCR
l mt diode chnh lu c kim so
Anod
K
Catod
G
Cng
(Gate)

P
N
P
N
Anod
P
N
P
A A
K
Catod
G
Cng
(Gate
N
N
)
P
C
B
E
C
B
E
A
A
K
K
G
I
G
I
C2
I
C1
I
B2
T
1
T
2
G
Cu to M hnh tng ng
M hnh tng ng K hiu
Hnh 1


Nu ta mc mt ngun in mt chiu V
AA
vo SCR nh hnh sau. mt dng in
nh I
G
kch vo cc cng G s lm ni PN gia cc cng G v catot K dn pht khi
dng ln hn nhiu. Nu ta i chiu ngun V
AA
(cc dng ni
vi catod, cc m ni vi anod) s khng c dng in qua SCR cho d c dng in
kch

n v thu
G
h vo cc nn ca Transistor NPN T
1
tc cng G
ca S
. Dng in ny ty thuc vo V
AA
v in tr ti
R
A
.
AA AA
n mt tr s no (ty thuc vo tng SCR) gi l dng in
duy t
in anod I
A
qua SCR
I
G
. Nh vy ta c th hiu SCR nh mt diode nhng c thm cc cng G v
SCR dn in phi c dng in kch I
G
vo cc cng.

Cng
P
N

Ta thy SCR c th coi nh tng ng vi hai transistor PNP v NPN lin kt
nhau qua ng n
Khi c mt dng in nh I kc
CR. Dng in I
G
s to ra dng cc thu I
C1
ln hn, m I
C1
li chnh l dng nn
I
B2
ca transistor PNP T
2
nn to ra dng thu I
C2
li ln hn trc Hin tng ny c
tip tc nn c hai transistor nhanh chng tr nn bo ha. Dng bo ha qua hai
transistor chnh l dng anod ca SCR
C ch hot ng nh trn ca SCR cho thy dng I
G
khng cn ln v ch cn tn
ti trong thi gian ngn. Khi SCR dn in, nu ta ngt b I
G
th SCR vn tip tc dn
in, ngha l ta khng th ngt SCR bng cc cng, y cng l mt nhc im ca
SCR so vi transistor.
Ngi ta ch c th ngt SCR bng cch ct ngun V hoc gim V sao cho
dng in qua SCR nh h
r I
H
(hodding current).
A
G
K
N
(Gate)
P
I
A
R
G
R
V V
GG AA
A
I
G
V
AK
Hnh 2
2.
phn cc n
y qua SC
n in th catod), nu ta
ni tt (hoc h) ngun V
GG
(I
G
=0), khi V
AK
cn nh, ch c mt dng in rt nh
chy qua SCR (trong thc t ngi ta xem n SCR khng dn in), nhng khi V
AK
t
n mt tr s no (ty thuc vo tng SCR) gi l in th quay v V
BO
th in th
V
AK
ng st xung khong 0,7V nh diode thng. Dng in tng ng by gi
chnh l dng in duy tr I
H
. T by gi, SCR chuyn sang trng thi dn in v c c
tuyn gn ging nh diode thng.
u ta tng ngun V
GG
to dng kch I
G
, ta thy in th quay v nh hn v khi
dng kch I
G
cng ln, in th quay v V
BO
.

c tuyn Volt-Ampere ca SCR:
c tuyn ny trnh by s bin thin ca dng in anod I
A
theo in th anod-
catod V
AK
vi dng cng I
G
coi nh thng s.
- Khi SCR c ghch (in th anod m hn in th catod), ch c mt
dng in r rt nh ch R.
- Khi SCR c phn cc thun (in th anod dng h
h
t

N
cng nh

0
I
A
SCR e
ng
Diod
th
V
AK
I
G
= 0
I
G2
> I
G1
> 0
I
H
V
BO
0,7V
V
BR
Hnh 3
3. Cc thng s ca SCR:
Sau y l cc thng s k thut chnh ca S
- Dng thun ti
L dng in anod I
A
trung h m SCR c th chu ng c lin tc.
Trong trng hp dng ln, SCR phi c gii nhit y . Dng thun ti a ty
thuc vo mi SCR, c th t vi trm mA n hng trm Ampere.
- in th ngc ti a:
y l in th phn cc nghch ti a m ch a xy ra s hy thc (breakdown).
y olt n
hng
- Dng cht (latching current):
L dng thun ti thiu gi SCR trng thi dn in sau khi SCR t trng thi
ngng sang trng thi ng cht thng ln hn dng duy tr cht t SCR cng
sut nh v ln hn dng duy tr kh nhiu SCR c cng s
- Dng cng ti thiu (Minimun gate current):
Nh thy, khi in th V
AK
ln hn V
BO
th SCR s chuyn sang trng thi dn
in m khng cn dng kch I
G
. Tuy nhin trong ng dng, thng ngi ta phi to ra
mt dng cng SCR dn in ngay. Ty th ng ti thiu t di
1mA n vi chc mA. Ni chung, SCR c cn ng ln th cn dng kch ln. Tuy
nhin n ch l dng cng khng c qu ln, c th lm hng ni cng-catod ca
SCR
n lc SCR dn gn bo ha (thng l
0,9 n m khong vi S. Nh vy, thi gian hin din ca
xung kch ph
- Thi gian tt (turn off time):
tt SCR, ngi ta gim in th V
AK
xung 0Volt, tc dng anod cng bng 0.
Th nhng nu ta h in th anod xung 0 ri tng ln ngay th SCR vn dn in mc
d khng c dng kch. Thi gian tt SCR l thi gian t lc in th V
AK
xung 0 n
lc ln cao tr li m SCR khng dn in tr li. Thi gian ny ln hn thi gian m,
thng khong vi chc S. Nh vy, SCR l linh kin chm, hot ng tn s thp, ti
a khong vi chc KHz.
- Tc tng in th dv/dt:
CR
a:
bn ln nht
l tr s V
BR
hnh trn. SCR c ch to vi in th nghch t vi chc v
ngn volt.
dn. D
ut ln.
eo mi SCR, dng c
g sut c
, n
.
- Thi gian m (turn on time):
L thi gian t lc bt u c xung kch
ln dng nh mc). Thi gia
i lu hn thi gian m.
Ta c th lm SCR dn in bng cch tng in th anod ln n in th quay v
V

nod
thn in th V anod khng cn ln. Thng s dv/dt l tc
tng t t trn v tr ny SCR s dn in. L do l c mt
in ransistor trong m hnh tng ng ca SCR.
dng in qua t l:
BO
hoc bng cch dng dng kch cc cng. Mt cch khc l tng in th a
nhanh tc dv/dt ln m bn
h ln nht m SCR cha dn, v
dung ni C
b
gia hai cc nn ca t
dt
dV
C i
b cb
=
c kch SCR. Ng
. Dng in ny chy vo cc nn ca T
1
. Khi dV/dt
ln th i
cb
ln s i ta thng trnh hin tng ny bng cch mc
mt t C v in tr R song song vi SCR chia bt dng i
cb
.

y l tr s ti a ca tc tng dng anod. Trn tr s ny SCR c th b h. L
do l khi SCR chuyn t trng thi ngng sang trng thi dn, hiu th gia anod v
catod cn ln trong lc dng in anod tng nhanh khin cng sut tiu tn tc thi c
th qu ln. Khi SCR bt u dn, cng sut tiu tn tp trung gn vng cng nn vng
ny d b h hng. Kh nng chu ng ca di/dt ty thuc vo mi SCR.
4. SCR hot ng in th xoay chiu
Khi SCR hot ng in th xoay chiu tn s thp (th d 50Hz hoc 60Hz) th
vn tt SCR c gii quyt d dng. Khi khng c xung kch th mng in xung
gn 0V, SCR s ngng. D nhin bn k m SCR khng hot ng mc d c xung
kch.

A
K
G
C
R
Hnh 4

- Tc tng dng thun ti a di/dt:

t cng su ho ti, ngi ta cho SCR hot ng ngun chnh lu ton k.

5. Vi ng dng n gin:
ch n khn cp khi mt in:

ng t c
V in 50Hz c chu k T=1/50=20nS nn thi gian in th xp x 0V lm
ngng SCR.
M
T
i

L

~
I
G
220V/50Hz
I
G
V Ti
Gc dn
SCR ngng SCR dn
Hnh 5
V
T
i

L

~
I
G
220V/50Hz
I
G
Ti V
Gc d
Hnh 6
n
R3 1K
6, 3V
DEN
D1
R2 150
ACCU 6V
6, 3V
D2 SCR
100uF
R1
D3
T1
2
50Hz
20V/
c chn ty theo dng np accu
+
-
Hnh 7
Bnh thng n 6V chy sng nh ngun in qua mch chnh lu. Lc ny SCR ngng
dn do b phn cc nghch, accu c np qua D
1
, R
1
. Khi mt in, ngun in accu s lm
thng SCR v thp sng n.
Mch np accu t ng (trang sau)

- Khi accu np cha y, SCR
1
dn, SCR
2
ngng
- Khi accu np y, in th cc dng ln cao, kch SCR
2
lm SCR
2
dn, chia bt
dng np bo v accu.
- VR dng chnh mc bo v (gim nh dng np)
D2
D1
5
0
u
F
6,3V
6,3V
~ 110V
SCR1
R3 1K
A
C
C
U

1
2
V
SCR2
R
3

1
K
D3
+
-
R
1
47 2W R
2
47 2W
V
Z
= 11V
R
4
47 2W
V
R

750

Hnh 8
~220V
6
V

2W
II. T

Thng coi n t SCR lng hng v c th dn theo hai chiu. Hnh
sau y cho thy cu to nh tng ng v cu to ca Triac.

I
G
RIAC (TRIOD AC SEMICONDUCTOR SWITCH).
n
p
p
n n
n n
n
T
2
T
2
c h m in
, m h

T
1
u
G
Cng
(Gate)

p
n
p
T
1
u
G
+
n
p
n
p
T
1
u
T
2
G
I
G
+
-
- T
+
T
1
T
1
G
+
2
T
2
G
T
2
T
1
G

T
T
1
Hnh 9
2
Nh vy, ta thy Triac nh gm bi mt SCR PNPN dn in theo chiu t trn
xung di, kch bi dng cng dng v mt SCR NPNP dn in theo chiu t di
ln kch bi dng cng m. Hai cc cn li gi l hai u cui chnh (main terminal).
- Do u T
2
dng hn u
T1
, Triac dn in ta c th kch dng cng dng v
khi n T
1
ta c th kch dng cng m.

- Nh y c tuyn V-I ca Triac c dng sau:
- Tht ra, do s tng tc ca vng bn dn, Triac c ny theo 4 cch khc nhau,
c trnh ng hnh y:

u T
2
m h
T
0
I
H
I
A
V
21
0,7V +V
BO
BO
Hnh 10
2
-V
V
21
G
I
G
T
1
v
by b v sau

T
2
T
1
G
I
G
> 0
+
-
T
2
T
1
G
I
G
< 0
+

T
2
T
1
G
I
G
< 0
-
+
T
2
T
1
G
I
G
> 0
-
+
Hnh 11
-
Cch 1 Cch 2 Cch 3 Cch 4
Cch (1) v cch (3) nhy nht, k n l cch (2) v cch (4). Do tnh cht dn in
c hai chiu, Triac dng trong mng in xoay chiu thun li hn d sau y
cho thy ng dng ca Triac trong mng in xoay chiu.

III. SCS (SILICON CONTROLLED SWITCH).

Nh hi ta p mt xun ng vo cng catod thi SCS dn in. Khi SCS ang
hot ng, nu ta p mt xung d cng anod th SCS s ngng dn. Nh v y, i
vi SCS, cng catod dng m SCS, v cng anod dng tt SCS. Tuy c kh nng
nh SCR, nhng thng ngi ta ch ch to SCS cng sut nh (phn ln di vi trm
miniwatt) v do cng catod rt nhy (ch cn kch cng catod khong vi chc A) nn
SCS c ng dng lm mt switch in t nhy.
d sau l mt mch bo ng dng SCS nh mt cm bin in th:
SCR. Th
VR
~
. +
- .
D2
D1 R
2
2
0
V
/
5
0
H
z

Ti
+
- V
L
Hnh 12
Gc dn
Triac dn
t
L
V
SCS cn c gi l Tetrode thyristor (thyristor c 4 cc). V mt cu to, SCS
ging nh SCR nhng c thm mt cng gi l cng anod nn cng kia ( SCR) c
gi l cng catod.

vy, k g d
ng vo
V
N
N
Anod
A
K
Catod
G
K
Cng
Catod
Cu to

P
P
G
A
Cng
Anod
K
G
A
K
G
A
A
K
G
K
G
A
M hnh tng ng
Hnh 13
K hiu
K
A
G
K
G
A

ng vo thng ngi ta mc ng kim loi, khi s tay vo, SCS dn in
Led t ng ng chy sng, Relais hot ng ng mch bo ng hot ng.
C
c cng hay ng hn l mt
transistor khng c cc nn. Hnh sau y m t cu to, k hiu v mch tng ng

mt h u in th mt chiu theo mt chiu nht nh th khi n in th
V
BO
, DIAC dn i p hiu th theo chiu ngc li th n tr s -V
BO
, DIAC
cng dn in, D hin mt in tr m ( ha DIAC gim khi dng
in qua DIAC t cc tnh cht trn, DIAC tng ng vi hai Diode Zener mc
i u. Thc t, khi khng c DI i ta c th dng hai D in th
Zener thch hp thay th. (Hnh 17)
rong ng dng, DIAC thng dng m Triac. Th d nh mch iu chnh
sng ca bng n (Hnh 18)
mt mi
IV. DIA
V cu to, DIAC ging nh mt SCR khng c c
ca DIAC.
Khi p i
n v khi
IAC th
ng). T
in th i u
AC, ng iode Zener c
T

INPUT 2
+12V
1K 1K
10K
LED
1K
INPUT 3
Relay
LED
10K
LED
10K
INPUT 1
Hnh 15
Relais ng
mch bo
ng

p
p
n
n
n
Anod 1
Anod 2
Cu to
Anod 1
Anod 2
K hiu
Anod 1
Anod 2
T ng ng
Anod 1
Anod 2
Hnh 16
0 V
I
110V/50Hz
Bng n Bng n
VR
-V
BO
+V
BO
C
Hnh 18

bn k dng th in tng, t n in cho n in
BO
th DIAC dn,
to dng kch cho Triac dn in. H ng, Triac ng n bn k m t
C np in theo chiu ngc li n in th -V
BO
, DIA i dn in kch Triac dn
in. Ta thay i VR thay i thi hng np in ca t C, do thay i gc dn ca
Triac a n lm thay i sng ca bng .
V. DIOD SHOCKLEY.
Diod shockley gm c 4 lp bn d N (diod 4 lp) nhng ch c hai cc. Cu
o c bn v k hiu cng vi c tuyn Volt-Ampere khi phn cc thun c m t
hnh v sau y:

Hnh 17

th p th V
ng. t bn k d tm
C l
n
n PNP
220V/50Hz
N
N
t
Anod
A + A

K
Catod
P
P
Hnh 19
- K
I
A
-
+
V
f
I
BO
V
BO
0
V
f
Ta thy c tuyn ging nh SCR lc dng cng I
G
=0V, nhng in th quay v
V
BO
ca Diod shockley nh hn nhiu. Khi ta tng in th phn cc thun, khi in th
anod-catod ti tr s V
BO
th Diod shockley bt u dn, in th hai u gim nh v sau
ho

- Bn k dng C np in n in th V
BO
th Diod shockley dn in, kch
SCR dn.
Bn k m, Diod shoc ng, SCR cng ngng.
VI. GTO (GATE TURN OFF SWITCH).

t ng nh Diod bnh thng.
p dng thng thng ca Diod shockley l dng kch SCR. Khi phn cc
nghch, Diod shockley cng khng dn in.
110V/50Hz
R
C
Ti
Hnh 20
220V/50Hz
, t
kley ng
GTO l mt linh kin c 4 lp bn dn PNPN nh SCR. cu to v k hiu c m
t nh sau:

N
N
Anod
A
K
Catod
P
P
G
Cng
G
Cng
A
K
Catod
Hnh 21
K hiu
Anod
Tuy c k hiu khc vi SCR v SCS nhng cc tnh cht th tng t. S khc bit
c bn cng l s tin b ca GTO so vi SCR hoc SCS l c th m hoc tt GTO ch
bng mt cng (m GTO bng cch a xung dng vo cc cng v tt GTO bng cch
a xung m vo cc cng).
- So vi SCR, GTO cn dng in kch ln hn (thng hng trm mA)
na ca GTO l tnh chuyn mch. Thi gian m ca
GTO cng ging nh SCR (khong 1s), nhng thi gian tt (thi gian chuyn t trng
thi dn in sang trng thi ngng d h nh hn SCR rt nhiu (khong 1s GTO
v t 5s n 30s SCR). Do GTO dng nh mt linh kinc chuyn mch nhanh.
GTO thng c dng rt ph bin trong cc mch m, mch to xung, mch iu ho
in sau y l mt ng dn
Diod Zener.

p in, GTO dn, anod v catod xem nh ni tt. C
1
np in n in th
ngun V
AA
, lc V
GK
<0 lm GTO ngng dn. T C
1
x in qua R
3
=V
R
+R
2
. Thi gian
x in ty thuc vo t ng =R
3
C
1
. Khi V
o
<V
Z
, GTO li dn in v chu k mi li
c lp li.

- Mt tnh cht quan trng
n) t
th mch g ca GTO to tn hiu rng ca kt hp vi
VAA=+200V
A
K
R
2

Khi c
hi h

Hnh 23
V
o
V
AA
V
Z
0
+Vo
R
1
VR
C1
VR
Hnh 22

A
K
G
VII. UJT (UNIJUNCTION TRANSISTOR TRANSISTOR
T
ch c mt c nht ni P-N. Tuy khng thng dng nh BJT, nhng UJT c mt s c
tnh h to dng sng v nh
gi.

u to thnh
hai c
1 2
y nhm nh
ng vai tr cht bn dn loi P. Vng P ny nm cch vng B hong 70% so vi chiu
di ca hai cc nn B
1
, B
2
. Dy nhm ng vai tr cc pht E.
Hnh sau y trnh by cch p dng in th mt chiu vo cc cc c
kho st cc c tnh ca n.

C NI).
Transistor thng (BJT) gi l Transistor lng cc v c hai ni PN trong lc UJ
c bit nn mt thi gi vai tr quan trng trong cc mc
1. Cu to v c tnh ca UJT:
Hnh sau y m t cu to n gin ho v k hiu ca UJT
Mt thi bn dn pha nh loi n
-
vi hai lp tip xc kim loi hai
c nn B v B . Ni PN c hnh thnh thng l hp cht ca d
1
k
a UJT

n-
p
B
2
Nn
B
1
Nn
E
Pht
E B
2
B
1
B
2
E
B
1
Hnh 24
E
A
EE
B1
B2
D1
V
B2
R
BB
EE
E
V
R
B1
B1
V
R
BB
B2
Mch tng ng ca UJT
I
E
R
E
E
E
Hnh 25
V
- Khi cha p V
EE
vo cc pht E (cc pht E h) thi bn dn l mt in tr
vi ngun in th V
BB
, c k hiu R
BB
v gi l in tr lin nn (thng c tr s t
4 K K). T m hnh tng ng ta th y Diod c dng din t ni P-N
gia vng P v vng n
-
. in tr R
B1
v R
B2
din t in tr ca thi bn dn n
-
. Nh vy:
n 10
0 I
2 B 1 B BB
E
R R R
=
+ =
in th ti im A l: Vy
0 .V
BB
> =
+
=
A
R
R
V
BB
2 B 1 B
1 B
V
R

Trong :
1 B 1 B
R R
= = c gi l t s ni ti (intrinsic stan
BB 2 B 1 B
c cho bi nh sn xut.
R R R +
d off)
R
BB
v
mass), v V
A
c in th dng nn Diod c phn
cc nghch v ta ch c mt dng in r nh chy ra t cc pht. tng V
EE
ln dn, dng
in theo chiu dng (d
dng dn). Khi V
E
c tr s
V =V +V
n v bt u dn
in mnh.
in th V
E
=0,5V + V
B2B1
=V
P
c gi l in th nh (peak-point voltage) ca
UJT.

in tr
m
- By gi, ta cp ngun V
EE
vo cc pht v nn B
1
(cc dng ni v cc pht).
Khi V
EE
=0V (ni cc pht E xung
I
E
bt u tng ng r ngc I
E
gim dn, v trit tiu, sau
E D A
V
E
=0,5V + V
B2B1
( y V
B2B1
= V
BB
) th Diod phn cc thu

Vng
V
E
0
V
I
E
V
P
V
I
P
I
V
0
lng
nh
Thung
V
E
V
P
I
E I
V
0
V
V
Hnh 26
Khi V
E
=V
P
, ni P-N phn cc thun, l trng t vng pht khuch tn vo vng n
-

v di chuyn n vng nn B
1
, lc l trng cng ht cc in t t mass ln. V dn
in ca cht bn dn l mt hm s ca mt in t di ng nn in tr R
B1
gim.
Kt qu l lc dng I
E
tng v in th V
E
gim. Ta c mt vng in tr m.
in tr ng nhn t cc pht E trong vng in tr m l:
E
E
d
I
V
r
=
Khi I
E
tng, R
B1
gim trong lc R
B2
t

b nh hng nn in tr lin nn R
BB
gim.
Khi I
E
ln, in tr lin nn R
BB
ch yu l R
B2
. Kt thc vng in tr m l vng
thung lng, lc dng I
E
ln v R
B1
qu nh khng gim na (ch l dng ra cc
nn B
1
) gm c dng in lin nn
B
cng vi dng pht I
E
) nn V
E
khng gim m bt
u tng khi I tng. Vng ny c gi l vng bo ha.
P
a cc pht E t UJT hot ng trong vng
in tr m. Dng in thung lng I
V
l dng in ti a ca I
E
trong vng in tr m.
P V
EB1
in tr m.
i ta cho UJT hot ng trong vng in tr m,
mun

Q
B2
I
E
Nh vy ta nhn thy:
- Dng nh I l dng ti thiu c
- Tng t, in th nh V l in th thung lng V l in th ti a v ti thiu
ca V t UJT trong vng
Trong cc ng dng ca UJT, ng
vy, ta phi xc nh in tr R
E
I
P
<I
E
<I
V

Th d trong mch sau y, ta xc nh tr s ti a v ti thiu ca R
E
EB1
BB
+V
B1
R
+
-
V
V
EB1
I
E
0
V
EB1
I
E
0 I
P
I
V
V
V
V
P
V
BB
> V
P
Emax
R
Emin
Hnh 27
R


Ta c:
P
P BB
P
P BB
max E
I
V V
I 0
V V
I
V
R

=
=
V
V
V BB V BB
min E
I
V
IV 0
V V
I
V
R
V
=
=

Nh vy:
P
P BB
E
V
V BB
I
V V
R
I
V V

2. Cc thng s k thut ca UJT v vn n nh nhit cho nh:
Sau y l cc thng s ca UJT:
- in tr lin nn R
BB
: l in tr gia hai cc nn khi cc pht h. R
BB
tng khi
nhit tng theo h s 0,8%/1
o
C
- T s ni ti:
BB
1 B
2 B 1 B
1 B
R
R
R R
R
=
+
= T s ny cng c nh ngha khi cc pht E
h.
in th nh V
P
v dng in nh I
P
. V
P
gim khi nhit tng v in th
ngng ca ni PN gim khi nhit tng. Dng I gim khi V tng.
- in th thung lng V v dng in thung lng I . C V v I u tng khi V
BB

hn v V
BB
10V. Tr s thng thng ca V
Esat
l 4 volt (ln
hn nhiu so vi diod thng).
n nh nhit cho nh: in th nh V
P
l thng s quan trng nht ca UJT. Nh
thy, s thay i ca i nh V
P
ch yu l do in th ngng ca ni PN v t
s thay i khng ng k
Ngi ta n nh nhit cho V
P
b h thm mt in tr nh R
2
(thng khong
vi trm ohm) gia nn B
2
v ngun V
BB
. Ngoi ra ngi ta cng mc mt in tr nh
R
1
cng k ng vi trm oh cc nn B
1
ly tn hiu ra.

-
P BB
V V V V
tng.
- in th cc pht bo ha V
Esat
: l hiu in th gia cc pht E v cc nn B
1

c o I
E
=10mA hay
n th
.
ng cc
ho m


Khi nhit tng, in tr lin nn R
BB
tng nn in th lin nn V
B2B
o cho s tng ca V
1
tng. Chn
R
2
sa
B2
N. Tr ca R
2

c
B1
b tr s gim ca in th ngng ca ni P
chn gn ng theo cng thc:
BB
BB
2
V
R ) 0 4 0 (
R

8 , ,

Ngoi ra R
2
cn ph thuc vo cu to ca UJT. Tr chn theo thc nghim khong
vi tr
3. ng dng n gin ca UJT:
ch dao ng th gin (relaxation oscillator)
gi ta thng dng UJT lm thnh mt mch dao ng to xung. Dng mch v
tr s cc linh kin in hnh nh sau:

BB
m ohm.
M
N
B2
R1
V B1
R2
E
Hnh 28
BB
330
V
B2
C1 .1
R1
E
R2
B1
V
V
R
10K
+12V
E
22
V
E
t
V
C
1
0
C
1
np C
1
x (rt nhanh)
V
B2
V
B1
V
E
t
t
t
V
P
V
V
Hnh 29

=

V
P

Khi cp in, t C
1
bt u np in qua in tr R
E
. (Diod pht-nn 1 b phn cc
nghch, dng in pht I xp x bng khng). in th hai u t tng dn, khi n in
th
V
. n y UJT bt u ngng
v chu k mi lp li.
* Dng UJT to xung kch cho SCR

- Bn k dng nu c xung a vo cc cng th SCR dn in. Bn k m SCR
ngng.
- iu chnh gc dn ca SCR bng cch thay i tn s dao ng ca UJT.
VIII. PUT (Programmable Unijunction Transistor).
Nh tn gi, PUT ging nh mt UJT c c tnh thay i c. Tuy vy v cu
to, PUT khc hn UJT

E
nh V
P
, UJT bt u dn in. T C
1
phng nhanh qua UJT v in tr R
1
. in th
hai u t (tc V
E
) gim nhanh n in th thung lng V
z
330
B1
470uF
110V/50Hz
SCR
100K
20K
+
F1
FUSE
V=20V
.1
47
5,6K
UJT
B2
-
E
Hnh 30
220V/50Hz
Ti

N
N
Anod
A
K
Catod
P
P
G
Cng
G
Cng
Anod
A
K
Catod
Cu to K hiu Phn cc
R
B2
GK
R
A
V
I
AK
V
A
AA
R
K
V
B1
Hnh 31
l cng G nm vng N g
anod ln hn in th catod,
ngng ca ni PN.
n anod nn PUT dn in, ngoi vic in th
in th anod cn phi ln hn in th cng mt in th
Ta c:
BB BB
1 B
V V
R
V = =
2 B 1 B
Trong :
GK
R R +
2 B 1 B
1 B
R R
R
+
= nh c nh ngha trong UJT
l UJT, R
B1
v R
B2
l in tr ni ca UJT, Trong lc PUT,
R
B1
v R
m V = 0,7V (th d Si)
V
G
= V
BB
V
T
Tuy nhin, nn nh
B2
l cc in tr phn cc bn ngoi.
c tuyn ca dng I
A
theo in th cng V
AK
cng ging nh UJT
in th nh V
P
c tnh bi: V
P
= V
D
+V
BB

D
P
= V
G
+ 0,7V

Tuy PUT v UJT c c tnh ging nhau nhng dng in nh v thung lng ca
PUT nh hn UJ
V
AK
Vng in tr m
V
P
0
I
P
I
V
I
A
Hnh 32
+ Mch dao ng th gin dng PUT

t
V
A
0
V
P
V
V
R
BB
B2
K
+V
R
G
A
R
C
R
B1
K
X
Np
Hnh 33

Ch trong mch dng PUT, ng x ca t in l anod. Tn hiu ra c s dng
thng ly catod (v c th dng kch SCR nh UJT)

V
G
V
K
= V
BB
t
V
K
V
K
= V
P
-V
V
t
Hnh 34
CHNG VIII
LIN UANG IN T
rong chng ny, chng ta ch cp n mt s cc linh kin quang in t thng
dng nh quang in tr, quang diod, quang transistor, led cc linh kin quang in t
qu c bit khng c
I. NH SNG.
ng v tuyn trong h thng truyn thanh, truy n tia X
trong y khoa Tuy c cc cng dng khc nhau nhng li c chung mt bn cht v
c gi l sng in t hay bc x in t. im khc nhau c bn ca sng in t l
tn s y bc sng. Gia tn s v bc sng lin h bng h thc
H KIN Q
T
cp n.
S n hnh, nh snh pht
f
c
= ha
Trong c l vn tc nh sng = 3.108m/s
f l tn s tn Hz
Bc sng tnh bng m. Ngoi ra ngi ta thng dng cc c s:
m = 10
-6
m ; nm = 10
-9
m v Amstron = =10
10
m
rared) v pha tn s cao hn gi l bc x t ngoi
(ultraviolet).
c bc sng khong 380nm)
rong vng nh sng thy c, nu ch c mt khong ngn ca di tn s ni trn
th cm gic ca mt ghi nhn c 7 mu:
h bng
S khc bit v tn s dn n mt s khc bit quan trng khc l ta c th thy

c sng in t hay khng. Mt ngi ch thy c sng in t trong mt di tn s
rt hp gi l nh sng thy c hay thng gi tt l nh sng. V pha tn s thp hn
gi l bc x hng ngoi (inf
Ta ch c th thy c bc x c tn s khong 4.10
-14
Hz (tc bc sng 750nm)
n tn s khong 7,8.10
14
Hz (t

Hng ngoi
(=750nm)4.10
14
Hz
T ngoi
(=380nm)7,8.10
14
Hz

T
Tm
Violet
L
Blue
Lam
Cyan
Xanh l
Green
Vng
Yellow
Cam
Orange

Red

380nm 430 470 500 560 590 650 750nm

Ch l gii hn trn ch c tnh cch tng i. S khc nhau v tn s li dn n
mt s khc bit quan trng na l nng lng bc x. Nng lng bc x t l vi tn
s th
sng v c o bng
n v footcandles. Th d ngun sng l mt bng n trn, th mt im cng xa
ta ra trong mt gc khi (hnh
a quang thng l Lumens (Lm)
hay W

2
II. QUANG IN TR (PHOTORESISTANCE).
L in tr c tr s cng gim khi c chiu sng cng mnh. in tr ti (khi
khng c chiu sng - trong bng ti) thng trn 1M, tr s ny gim rt nh c
th di 100 khi c chiu sng mnh
u vo cht bn dn (c
th l Cadmium sulfide CdS, Cadmium selenide CdSe) lm pht sinh cc in t t
do, t

phng din nng lng, ta ni nh sng cung cp mt nng lng E=h.f
cc in t nhy t di ha tr ln di dn in. Nh vy nng lng cn thit h.f phi ln
hn n ng lng ca di cm.
eo cng thc: E=h.f vi h: hng s planck = 6,624.10
-34
J.sec
Nh ta thy, bin trung bnh ca ph c gi l cng
ngun, cng sng cng yu nhng s lng nh sng
nn) l khng i v c gi l quang thng. n v c
att.
1 Lm = 1,496.10
-10
watt
n v ca cng nh sng l foot-candles (fc), Lm/ft
2
hay W/m
2
. Trong :
1 Lm/ft
2
= 1 fc = 1,609.10
-12
W/m

Nguyn l lm vic ca quang in tr l khi nh sng chi
K hiu
Hnh 1
Hnh dng
c s dn in tng ln v lm gim in tr ca cht bn dn. Cc c tnh in v
nhy ca quang in tr d nhin ty thuc vo vt liu dng trong ch to.

in tr
0
f
c
1000
10
0,1 10 100 1000
Hnh 2
5
10000

V

V ca quang in tr:
Qua i c dng rt ph b trong cc mch iu khin
1. M ng:

Khi quang in tr c chiu sng (trng thi th n tr nh, in
th cng ca SCR gim nh khng g kch nn SCR ngng. Kh ngun sng b
chn

i ng dng
ng n tr in
ch bo

SCR
Ngun sng hng ngoi
R
1
Bng n hoc chung ti
B+
Hnh 3
ng trc) c i
i dn
, R tng nhanh, in th cng SCR tng lm SCR dn in, dng in qua ti lm
cho mch bo ng hot ng.
Ngi ta cng c th dng mch nh trn, vi ti l mt bng n c th chy
sng v m v tt vo ban ngy. Hoc c th ti l mt relais iu khin mt mch
bo ng c cng sut ln hn.
2. Mch m in t ng v m dng in AC:

TRIAC
DIAC
Bng n
15K
1K
A
110V/50Hz
.1
Hnh 4
220V/50Hz


Ban ngy, tr s ca quang in tr nh. in th im A khng m Diac
nn Triac khng hot ng, n tt. v m, quang tr tng tr s, ng in th
im A, thng Diac v kch Triac dn in, bng sng ln.
III. QUANG DIOD (PHOTODIODE).
Ta bit rng khi mt n -N c phn c n th vng him hp v dng thun
ln v do ht ti in a s (in t cht bn dn loi N v l trng cht bn dn loi
P) di chuyn to nn. Khi phn cc nghch, vng him rng v ch c dng in r nh
(dng b ch I
0
)

t), ta thy dng in
nghch tng ln gn nh t l vi quang thng trong lc dng in thun khng tng. Hin
tng ny c dng ch to quang diod.
Khi nh sng chiu vo ni P-N c nng lng lm pht sinh cc cp in t - l
trng st hai bn mi ni lm mt ht ti in thiu s t ng ln. Cc ht ti in
thiu s ny khuch tn qua mi ni to nn dng in ng k cng thm vo dng in
bo ha nghch I
0
t nhin ca diod, thng l di vi trm nA vi quang diod Si v
di vi chc A vi quang diod Ge.
ng diod ty thu t bn dn l Si, Ge hay Selenium
v sau nh a nh sng c cht b

lm t
n
i P c thu
chy qua. o ha ngh
I
R

V

K hiu Phn cc
Hnh 5
By gi ta xem mt ni P-N c phn cc nghch. Th nghim cho thy khi chiu
sng nh sng vo mi ni (gi s diod c ch to trong su
nhy ca qua
y cho thy
c vo ch
y theo tn s c
Hnh
n dn ny: chiu vo c

(A
o
)
nhy (%)
100
75
50
25
2000 4000 6000 8000 10000 12000 14000
0
Si Se G
e
T ngoi nh sng th

c tuyn V-I ca quang diod vi qua g l thng s cho thy quang thng
nh khi in th phn cc nghch nh, dng ng theo in th phn cc, nhng khi
in
).
nsistor l ni rng ng nhin ca quang diod. V mt cu to, quang
transistor cng ging nh transistor thng nhng cc nn h. Quang transistor c
mt t
c dng in r
(in th V lc khong vi chc mV transistor Si) v ni thu-nn c phn cc
nghc
ht c phn cc thun cht t nn dng in cc thu
l I
co
(1+). y l dng ti ca quang transistor.
y c Hng ngoi
0
4000f
c
3000f
c
2000f
c
1000f
c
L = 0
in th phn cc nghch
Hnh 7
Dng in nghch mA
Dng ti 0,1
0,2
0,3
0,4
0,5
ng thn
in t
th phn cc ln hn vi volt, dng in gn nh bo ha (khng i khi in th
phn cc nghch tng). khi quang thng ln, dng in thay i theo in th phn cc
nghch. Tn s hot ng ca quang diod c th ln n hnh MHz. Quang diod cng
nh quang in tr thng c dng trong cc mch iu khin ng - m mch
in (dn in khi c nh sng chiu vo v ngng khi ti).
IV. QUANG TRANSISTOR (PHOTO TRANSISTOR
Quang tra
hu knh trong sut tp trung nh sng vo ni P-N gia thu v nn.
Khi cc nn h, ni nn-pht c phn cc thuncht t do c
BE
h nn transistor vng tc ng.
V ni thu-nn c phn cc nghch nn c dng r I
co
chy gia cc thu v cc
nn. V cc nn b trng, ni nn-p

Khi c nh sng chiu vo mi ni thu nn th s xut hin ca i
trng nh trong quang diod lm pht sinh mt dng in I
do nh sng nn dng in
thu tr thnh: I
C
=(+1)(I
co
+I
)
Nh vy, trong quang transistor, c dng ti ln dng chiu sng u c nhn ln
(+1) ln so vi quang diod nn d dng s dng hn. Hnh trn trnh by c tnh V-I
ca quang transistor vi quang thng l mt thng s. Ta y c tuyn ny ging nh
c tuyn ca transistor thng mc theo kiu cc pht chung.
C nhi quang transistor nh t transistor dng c ch dng
trong cc mch iu khin, mch m lo g transistor Darlington c nhy rt
cao. Ngoi ra ngi ta cn ch to cc quang SCR, quang triac

Vi ng dng ca quang transistor:
y l mch n gin o cng nh sng, bin tr 5K dng chun my
nh ch, quang transistor cng dn
mnh, kim in k lch cng nhiu. D nhin mch trn ta cng c th dng quang in
tr hay quang diod nhng km nhy hn.
cc cp n t v l
th
u loi loi m huyn m
i quan
1. Quang k:
mt quang k mu. Khi nh sng chiu vo cng m
0
1
V
c tuyn V-I
CE
Quang thng
4
5
I
C
(mA)
1
2
3
N
P
N
B
f
R I
C
olt
h
V
CC
v
K hiu Phn cc
Hnh 8
Quang transistor Quang Darlington
A
T
2
T
1
G
K
Quang SCR Quang TRIAC
Hnh 9

2 ng hay tt Relais:

Trong mch ng relais, khi quang transistor c chiu sng n dn in lm
T1

thng uang
transistor khng c chiu sng nn quang transistor ngng v T lun thng, Relais
trng
V. D NG
quang tr, quang diod v quang transistor, nng lng caq nh sng chiu vo
cht bn dn v cp nng lng cho cc in t vt di cm. Ngc li khi mt in t
t di dn in rt xung di ho tr th s pht ra mt nng lng E=h.f
Khi phn cc thun mt ni P-N, in t t do t vng N xuyn qua vng P v ti
hp vi l trng (v phng din nng lng ta ni cc in t trong di dn in c
nng lng cao ri xung di ho tr - c nng lng thp v kt hp vi l trng),
khi ti hp th sinh ra nng lng.

.
9V
5K
K
Hnh 10
T1 T1
+12V
T2
C
T2
.1 .1 R
Relay Relay
R
+12V
Hnh 11
C
, Relais hot ng. Ngc li trong mch tt relais, trng thi thng trc q
1
thi ng. Khi c chiu sng, quang transistor dn mnh lm T
1
ngng, Relais
khng hot ng ( trng thi tt).
IOD PHT QUANG (LED-LIGHT EMITTI
DIODE).
Di dn in
Di ha tr
Di
cm
h
f

i vi diod Ge, Si th nng lng pht ra di dng nhit. Nhng i vi diod c
to bng GaAs (
Hnh 12
u
Gallium Arsenide) nng lng pht ra l nh sng hng ngoi (khng
thy
trung nh sng pht ra ngoi.

in cng
sut t u im
rt ln ca ni quang.
Hnh sau y gii thiu mt s ni quang in hnh:
c) dng trong cc mch bo ng, iu khin t xa). Vi GaAsP (Gallium
Arsenide phosphor) nng lng pht ra l nh sng vng hay . Vi GaP (Gallium
phosphor), nng lng nh sng pht ra mu vng hoc xanh l cy. Cc Led pht ra nh
sng thy c dng lm n bo, trang tr Phn ngoi ca LED c mt thu knh
tp

c nh sng lin tc, ngi ta phn cc thun LED. Ty theo vt liu cu to,
in th thm ca LED thay i t 1 n 2.5V v dng in qua LED ti a khong vi
mA.
VI. NI QUANG.
(OPTO COUPLER-PHOTOCOUPLER-OPTOISOLATOR)
Mt n LED v mt linh kin quang in t nh quang transistor, quang SCR,
quang Triac, quang transistor Darlington c th to nn s truyn tn hiu m khng cn
ng mch chung.
Cc ni quang thng c ch to di dng IC cho php cch ly phn
m thng l cao th khi mch iu khin tinh vi pha LED. y l m

K hiu
LED
Phn cc
cc
V
R
I
D
D
V
c tuyn
I
D
(mA)
V
D
(
10
8
6
4
2
0
volt) 1 2 1.5 .7 3
Si
GaAs
GaAsP GaAsP vng
GaP lc
Hnh 13
4N25 (Transistor output)
5
4N29 (Darlington output)
2 5
1
2
6 1 6
3 4 3 4

HC11C
1
2
3
6
4
MOC3021 (Triac output)
1
2
3
6
4

Hnh sau y gii thiu mt p dng ca ni quang

B ni q ng khi n th l b
hi LED sng, ni quang hot ng kch hai SCR h (mi SCR hot ng
k khi c xung kch t ni quang) cp dng cho ti.
- Khi LED tt, ni quang n , 2 S ng, ng t dng qua t
l m t v d ch lid e
- Q1:
- K
mt bn
o v ua i ngun n (chia t dng in qua LED).
ot ng
gng
SSR (So
CR ng
Stat
Relay).
i.
- Mch ny v m
2 (SCR output)
5 5

Hnh 14
110Vrms
270
U1
MOC3021
1
2
6
4
51
5
1
0
5
1
0
Q1
150
Ti
Hnh 15
I
3
0
V
n

3
V

220VAC
CH
S L
I. KH V IC - S KT T TRONG H THNG
phn tc ng v th ng
u y thn hoc khng th tch
r h l mt phin bn dn (hu ht l Si) hoc mt phin cch
i
y
thn l
hin t
t c
ui l
cc m
t tn
yu c
nhiu c
Nh t nhiu thnh phn, b phn.
Do
n hng triu, hng vi chc triu b phn ri. Nu khng
th th tch ca n s ln mt cch bt tin m
i c tp. M nu c tha mn chng na, th
my
i tip gia chng. H thng cng
phc nhiu. V vy, nu dng b phn ri
cho c
trc rt n
3. T h t ca mt h thng in t gm n thnh phn s l:
NG IX
C V IC
I NIM
IN T.
IC (Intergated-Circuit) l mt mch in t m cc thnh
c ch to kt t trong hoc trn mt (subtrate) ha
i nhau c. ny, c t
n.
Mt IC thng c kch thc di rng c vi trm n vi ngn micron, dy c vi
trm micron c ng trong mt v bng kim lai hoc bng plastic. Nhng IC nh v
g mt b phn chc nng (function device) tc l mt b phn c kh nng th
m chc nng in t no . S kt t (integration) cc thnh phn ca mch in
ng nh cc b phn cu thnh ca mt h thng in t vn l hng tm ti v theo
t u trong ngnh in t. Nhu cu ca s kt t pht minh t s kt t tt nhin ca
ch v h thng in t theo chiu hng t n gin n phc tp, t nh n ln,
s thp (tc chm) n tn s cao (tc nhanh). S tin trin ny l hu qu tt
a nhu cu ngy cng tng trong vic x l lng tin tc (information) ngy cng
a x hi pht trin.
ng h thng in t cng phu v phc tp gm r
ny ra nhiu vn cn gii quyt:
1. Khong khng gian m s lng ln cc thnh phn chim ot (th tch). Mt
my tnh in t cn dng
c hin bng mch IC, th khng nhng
n nng cung cp cho n cng s v cng ph
cng khng thc dng.
2. kh tn (reliability) ca h thng in t: l ng tin cy trong hot ng
ng theo tiu chun thit k. kh tn ca mt h thng tt nhin ph thuc vo
kh tn ca cc thnh phn cu thnh v cc b phn n
tp, s b phn cng tng v ch ni tip cng
c h thng phc tp, kh tn ca n s gim thp. Mt h thng nh vy s trc
hanh.
ui th trung bn
n 2 1
1
......
1
t
1
t
1
+ + + =
t t
Nu t
1
=t
2
=...=t
n
th
n
t
t
i
=
Vy nu mt transistor c tui th l 10
8
h, th mt my tnh gm 500000 ngn
transistor s ch c tui th gi 200
5
10
8
=
10 .
5
IC c ch to ng thi v cng cng phng php, nn
tui th IC xp x mt tui th mt transistor Planar.
4. Mt h thng (hay mt my) in t c cu to nh hnh v:

Song
khi m
vi mt , nm hng ti vic kt t ton th h thng in t trn mt
phim (chp)
Cc thnh phn trong
Vt liu
B phn
linh kin
B phn
linh kin
Mch in
t c bn
B phn cu
thnh h thng
H thn
in t
g

B phn chc nng

S kt t p dng vo IC thng thc hin giai on b phn chc nng.
ni kt t khng nht thit dng li giai on ny. Ngi ta vn n lc kt t
cc cao trong IC
Nm 1947 1950 1961 1966 1971 1980 1985 1990
Cng
ngh
Pht
minh
Transi
-stor
Linh
kin
ri
SSI MSI LSI VLSI ULSI GSI
S
Transistor
trn 1
chip t
thng

rong
cc sn
phm
1 1 10
100
1000
1000
20000
20000

500000
>500000 >1000000
mi
Cc sn
Linh
Mch
Vi x l
phm
bi
BJT
kin
planar,
Flip Flop
m, a
cng
Vi x
l 8 bit,
Vi x
chuyn
dng, x
thc
tiu
u

Diode Cng
logic,
hp,
mch
ROM,
RAM
l 16 v
32 bit
l nh,
thI gian

SSI: Small scale integration: Tch hp qui m nh
MSI: Medium scale intergration: Tch hp qui m trung bnh
scale integration: Tch hp theo qui m ln
GSI: Ultra large scal : Tch h m khng l
Tm li, cng nh IC a ng im l thut linh kin ri nh sau
- Gi thnh sn phm
- Kch c
- kh tn cao (tt c cc thnh ph c ch to cng lc v khng c nhng
LSI: Large
e integration p qui
n nh
h
i so vi k :
nh
n
im hn, ni).
- Tng cht lng (do gi thnh h, cc mt phc tp hn c th c chn h thng
nht).
- Cc linh kin c phi hp tt (matched). V tt c cc transistor c ch to ng
cng mt qui trnh nn cc thng s tng ng ca chng v c bn c cng
ln i vi s bin thin ca nhit .
l
rn mt bng cht cch in, dng cc lp m n cc thnh phn khc.
, t in, v cun cm
in tr st nh nh Au, Al,Cu...
in tr sut ln nh Ni-Cr; Ni-Cr-Al;
bn cc v dng mng in mi SiO;
in dung ln hn 0,02F/cm
2
.
o c cm ln
pl. Trong s IC, ng rnh dng cun cm khng
Cch in gia cc b phn: Dng SiO; SiO
2
; Al
2
O
3
.
Transistor mng mng c nghin cu rt nhiu ng dng vo IC
i o c dng, u p i l
ng thc dng.
2. IC n tnh th (Monolithic IC):
dng mt (Subtrate) bng cht
g l Si). Trn (hay trong) , ngi ta ch to tran tor de in
, t in. Ri dng cht cch in SiO
2
ph ln che ch cho cc b hn p
iO
2
, dng mng kim loi ni cc b phn vi nhau.
Transistor, diode u l cc b phn bn dn.
in tr: c ch to bng cch li dng in tr ca lp bn dn c khuch tn tp
cht.
T in: c ch to bng cch li dng in dung ca vng him i mt ni P-N b
phn cc nghch.
i khi ngi ta thm nhng thnh phn khc hn ca cc thnh p n k trn
dng cho cc mc ch c th
t n nhng tnh nng tt
thi v
- Tui th cao.
II. CC LOI IC.
Da trn qui trnh sn xut, c th chia IC ra lm 3
1. IC mng (film IC):
oi:
T ng to n
Loi ny ch gm cc thnh phn th ng nh in tr
Dy ni gia cc b phn: Dng mng kim loi c
in tr: Dng mng kim loi hoc hp kim c
Cr-Si; Cr c th to nn in tr c tr s rt ln.
m thi.
T in: Dng mng kim loi ng vai tr
SiO
2
, Al
2
O
3
; Ta
2
O
5
. Tuy nhin kh to c t c
Cun cm: dng mt mng kim loi hnh xon. Tuy nhin kh t
thc h
cun
qu 5H vi kch i ta t
chim th tch.
C mt thi,
mng. Nhng tic l transistor mng cha t n gia
t c trin v
n th n khng h
Cn gi l IC bn dn (Semiconductor IC) l IC
bn dn (thn sis , dio ,
p trn l tr
S
t
c th h

Cc thnh phn trn c ch to thnh mt s rt nhiu trn cng mt chip. C rt
hiu mi ni gia chng v chng c cch ly nh nhng ni P-N b phn cc nghch
(in ng trm M)
3. IC lai (hibrid IC).
L loi IC lai gia hai loi trn
T vi mch mng mng (ch cha cc thnh phn th ng), n a gn ngay trn
ca n nhng thnh phn tch cc (transistor, diode) ti nhng n i dnh sn. Cc
transistor v diode gn trong mch lai khng cn c v hay ring c bo
v bng mt lp men trng.
u im ca mch lai l:
- C th to nhiu IC (Digital hay Analog)
- C kh nng to ra cc phn t th ng c cc gi tr khc nhau vi sai s nh.
iode v ngay c
h to, ngi ta c th dng qui trnh phi hp. Cc thnh phn tc
ng
nn cc c tnh v thng s ca cc thnh phn th
uc vo cc c tnh v thng s ca cc thnh phn tc ng m ch
ph la chn vt liu, b dy v hnh dng. Ngoi ra, v cc transistor ca
IC lo
t mng, trn mt
din iu khin tc
ngn rt cao.
III. N
TINH TH
on ch to mt IC n tinh th c thnh phn tc ng l BJT, c n
gin

n
tr c h
gi t
, m ch cn
- C kh nng t trn mt , cc phn t mng mng, cc transistor, d
cc loi IC bn dn.
Thc ra khi c
c ch to theo cc thnh phn k thut planar, cn cc thnh phn th ng th
theo k thut mng. Nhng v qu trnh ch to cc thnh phn tc ng v th ng
c thc hin khng ng thi
ng khng ph th
thuc vo vic
i ny nm trong , nn kch thc IC c thu nh nhiu so vi IC cha transistor
ri.
IC ch to bng qui trnh phi hp ca nhiu u im. Vi k thu
tch nh c th to ra mt in tr c gi tr ln, h s nhit nh.
g ng ca mng, c th to ra mt mng in tr vi chnh xc
S LC V QUI TRNH CH TO MT IC
.
Cc giai
ha gm cc bc sau:
Bc 1:
0.15mm
25 75mm
n - Si
Nn P-Si
n - Si
Nn P-Si
0.5m
SiO
2
Hnh 1
0.025mm
0.15mm
a. T mt nn P-Si (hoc n-Si) n tinh th
b. To mt lp epitaxy mng loi N-Si
u tin, v s nhng ni cn m ca s,
chp hnh s ri ly phim
Nhng ni cn m ca s l vng ti trn phim
a. Bi m cn quang trn b mt. t phim trn ri
tia
phim b vo dung dch tricloetylen.
Ch
cc
b.Li em ch fluorhydric. Ch
nh
hc nh lp cn quang che ch.
em ty lp cn quang
d. Khuch tn cht bn dn P su n thn, to ra cc o
N.
e. Li m ca s, khuch tn cht bn dn P vo cc o N
(khuch tn Base)
f. Li m ca s, khuch tn cht bn dn N vo (khuch
tn Emitter)
g. Ph kim loi. Thc hin cc ch ni

Th d:
Mt mch in n gin nh sau, c ch to di dng
IC n tinh th.

c. Ph mt lp cch in SiO
2
Bc 2:
Dng phng php quang khc kh lp SiO
2

mt s ch nht nh, to ra cc ca s b mt tinh
th. T cc ca s, c th khuch tn tp cht vo.
P-Si
film
uv
Cht cm
quang
SiO
2
n-Si
P-Si
Cht cm
m bn, thu nh li.

t lp
quang
SiO
2
n-Si
Ha tan Rn li
P-Si
cc tm vo nhng ni cn m ca s c lp en trn
o v. Nhng tinh th
Ha tan
nh ng ni cn m ca s lp cn quang mi b ha tan,
ni khc rn li.
tinh th nhng vo dung d
ng ni cn m ca s lp SiO
2
b ha tan, nhng ni
k
c.
SiO
2
n-Si
Thn
P
n n
SiO
2
Khuch tn p
o
Nn
P
n n
SiO
2
Khuch tn Base
p p
Nn
P
n n
SiO
2
Khuch tn Emitter
p p
n n
Hnh 2
5
1
D1 D1
3 4 2
R
Hnh 3

IV. IC S (IC DIGITAL) V IC TNG T (IC
ANALOG).
Da trn chc nng x l tn hiu, ngi ta chia IC l hai loi: IC Digital v IC
Analog (cn gi l IC tuyn tnh)
1. IC Digital:
L loi IC x l tn hiu s. Tn hiu s (Digital signal) l tn hiu c tr gi nh phn
(0 v 1). Hai mc in th tng ng vi hai tr gi (hai logic) l:
- Mc High (cao): 5V i vi IC CMOS v 3,6V i vi IC TTL
- Mc Low (thp): 0V i vi IC CMOS v 0,3V i vi IC TTL
Thng thng logic 1 tng ng vi mc H, logic 0 tng ng vi mc L
Logic 1 v logic 0 ch hai trng thi i nghch nhau: ng v m, ng v sai,
cao v thp
Chng loi IC digital khng nhiu. Chng ch gm mt s cc loi mch logic cn
bn, gi l cng logic.
V cng ngh ch to, IC digital gm cc loi:
- RTL: Resistor Transistor logic
- DTL: Diode Transistor logic
- TTL: Transistor Transistor logic

Thn p

n

p

n

p
n+

n

p
n+ n+ n+ n+
in tr
2B
Diode
1B
Transistor
5 4B
Diode ni
3B
Kim loi AlB
SiOB
2
Collector
Base
Emitter Tip xc kim loi
Hnh 4B
- MOS: metal oxide Semiconductor
- CMOS: Complementary MOS
2. IC analog:
L loi IC x l tn hiu Analog, l loi tn hiu bin i lin tc so vi IC Digital, loi
IC Analog pht trin chm hn. Mt l do l v IC Analog phn ln u l mch chuyn dng
(special use), tr mt vi trng hp c bit nh OP-AMP (IC khuch i thut ton), khuch
i Video v nhng mch ph dng (universal use). Do tho mn nhu cu s dng, ngi
ta phi thit k, ch to rt nhiu loi khc nhau.

Ti liu tham kho
**********
1. Fleeman - Electronic Devices, Discrete and Intergrated - Printice - Hall International-
1998.
2. Boylestad and Nashelky - Electronic Devices and Circuit Theory - Printice - Hall
International 1998.
3. J.Millman - Micro electronics, Digital and Analog, Circuits and Systems - Mc.Graw.Hill
Book Company - 1979.
4. Nguyn Hu Phng - in t trung cp - S Gio Dc & o To TP HCM-1992

Gia o Trinh Linh Kien

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Gio trnh Linh Kin in T

ng vi d ca tip tuyn ti im Q v uyn ca

iode thng (diode chnh lu). c tu

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= 1 Ta suy ra: Ngoi ra t

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Trang 149 Bin son: Trng Vn Tm

B phn chc nng

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