Absolute Maximum Ratings ( T

J
=25C unless otherwise specified )
Symbol Parameter Condition Ratings Units
V
DRM
Repetitive Peak Off-State Voltage 600 V
I
T(RMS)
R.M.S On-State Current T
C
= 100C 16 A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
145/155 A
I
2
t
I
2
t for fusing
t =10ms 105
A
2
s
P
GM
Peak Gate Power Dissipation 5.0 W
P
G(AV)
Average Gate Power Dissipation Over any 20ms period 0.5 W
I
GM
Peak Gate Current 2.0 A
V
GM
Peak Gate Voltage 10 V
T
J
Operating J unction Temperature - 40 ~125 C
T
STG
Storage Temperature - 40 ~150 C
Mass 2.0 g
J an, 2004. Rev. 0
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
=16 A )
High Commutation dv/dt
Isolation Voltage ( V
ISO
=1500V AC )
General Description
This device is suitable for AC switching application, phase
control application such as fan speed and temperature mod-
ulation control, lighting control and static switching relay.
2.T2
3.Gate
1.T1
Symbol

1/5
BT139-600 Semi Wel l Semiconductor
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
TO-220
1
2
3
Electrical Characteristics
Symbol Items Conditions
Ratings
Unit
Min. Typ. Max.
I
DRM
Repetitive Peak Off-State
Current
V
D
=V
DRM
, Single Phase, Half Wave
T
J
=125 C

2.0 mA
V
TM
Peak On-State Voltage I
T
=20 A, Inst. Measurement
1.6 V
I
+
GT1

Gate Trigger Current V
D
=6 V, R
L
=10

25
mA I
-
GT1

25
I
-
GT3

25
V
+
GT1

Gate Trigger Voltage V
D
=6 V, R
L
=10

1.5
V V
-
GT1

1.5
V
-
GT3

1.5
V
GD
Non-Trigger Gate Voltage T
J
=125 C, V
D
=1/2 V
DRM
0.2

V
(dv/dt)c
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
=125 C, [di/dt]c =-6.0 A/ms,
V
D
=2/3 V
DRM
10
V/
I
H
Holding Current 20 mA
R
th(j-c)
Thermal Impedance J unction to case

1.2 C/W
BT139-600
2/5
-50 0 50 100 150
0.1
1
10
V
G
T

(
t

o
C
)


V
G
T

(
2
5

o
C
)
J unction Temperature [
o
C]
10
0
10
1
10
2
0
50
100
150
200
60Hz
50Hz


S
u
r
g
e

O
n
-
S
t
a
t
e

C
u
r
r
e
n
t

[
A
]
Time (cycles)
0 4 8 12 16 20
95
100
105
110
115
120
125
130
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o

A
l
l
o
w
a
b
l
e

C
a
s
e

T
e
m
p
e
r
a
t
u
r
e

[

o
C
]
RMS On-State Current [A]
0 2 4 6 8 10 12 14 16 18 20
0
5
10
15
20
25
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o

P
o
w
e
r

D
i
s
s
i
p
a
t
i
o
n

[
W
]
RMS On-State Current [A]
0.5 1.0 1.5 2.0 2.5 3.0 3.5
10
0
10
1
10
2
T
J
= 125
o
C
T
J
= 25
o
C


O
n
-
S
t
a
t
e

C
u
r
r
e
n
t

[
A
]
On-State Voltage [V]
10
1
10
2
10
3
10
-1
10
0
10
1
V
GD
(0.2V)
I
G
M

(
2
A
)
25
P
G(AV)
(0.5W)
P
GM
(5W)

V
GM
(10V)

G
a
t
e

V
o
l
t
a
g
e

[
V
]
Gate Current [mA]
3/5
Fig 1. Gate Characteristics Fig 2. On-State Voltage
Fig 3. On State Current vs.
Maximum Power Dissipation
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature

2
360

: Conduction Angle

2
360

: Conduction Angle
BT139-600
-50 0 50 100 150
0.1
1
10
I
_
GT3
I
+
GT1
I
_
GT1 I
G
T

(
t

o
C
)


I
G
T

(
2
5

o
C
)
J unction Temperature [
o
C]
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1






T
r
a
n
s
i
e
n
t

T
h
e
r
m
a
l

I
m
p
e
d
a
n
c
e

[

o
C
/
W
]
Time (sec)
4/5
Fig 8. Transient Thermal Impedance Fig 7. Gate Trigger Current vs.
Junction Temperature
BT139-600
Fig 9. Gate Trigger Characteristics Test Circuit

A
V
10
6V
R
G

A
V
10
6V
R
G

A
V
10
6V
R
G

Test Procedure Test Procedure Test Procedure

Dim.
mm Inch
Min. Typ. Max. Min. Typ. Max.
A 9.7 10.1 0.382 0.398
B 6.3 6.7 0.248 0.264
C 9.0 9.47 0.354 0.373
D 12.8 13.3 0.504 0.524
E 1.2 1.4 0.047 0.055
F 1.7 0.067
G 2.5 0.098
H 3.0 3.4 0.118 0.134
I 1.25 1.4 0.049 0.055
J 2.4 2.7 0.094 0.106
K 5.0 5.15 0.197 0.203
L 2.2 2.6 0.087 0.102
M 1.25 1.55 0.049 0.061
N 0.45 0.6 0.018 0.024
O 0.6 1.0 0.024 0.039

3.6 0.142
TO-220 Package Dimension
5/5
BT139-600
1. T1
2. T2
3. Gate
A
B
C
I
G
L
1
M
E
F

H
K
N
O
2
3
J
D