N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
=10
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
100 V
Continuous Drain Current at T
amb
=25C I
D
200 mA
Pulsed Drain Current I
DM
2 A
Gate-Source Voltage V
GS
20 V
Power Dissipation at T
amb
=25C P
tot
625 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
100 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.8 2.4 V ID=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
1
50
A
A
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125C(2)
On-State Drain Current(1) I
D(on)
500 mA V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
10 V
GS
=10V,I
D
=500mA
Forward Transconductance(1)(2
)
g
fs
100 mS V
DS
=25V,I
D
=500mA
Input Capacitance (2) C
iss
40 pF
Common Source Output
Capacitance (2)
C
oss
15 pF V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
5 pF
Turn-On Delay Time (2)(3) t
d(on)
5 ns
V
DD
25V, I
D
=500mA
Rise Time (2)(3) t
r
7 ns
Turn-Off Delay Time (2)(3) t
d(off)
6 ns
Fall Time (2)(3) t
f
7 ns
E-Line
TO92 Compatible
ZVN3310A
3-378
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)

I
D
(
O
n
)

-
O
n
-
S
t
a
t
e

D
r
a
i
n

C
u
r
r
e
n
t

(
A
m
p
s
)
Transfer Characteristics
0 2 4 6 8 10
0 10 20 30 40 50
Saturation Characteristics
6
0
2
4
8
0 4 8 12 16 20
10
V
D
S
-
D
r
a
i
n

S
o
u
r
c
e


V
o
l
t
a
g
e

(
V
o
l
t
s
)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
5V
ID=
1A
0.5A
0.2A

I
D
(
O
n
)
-
O
n
-
S
t
a
t
e

D
r
a
i
n

C
u
r
r
e
n
t


(
A
m
p
s
)
VGS-Gate Source Voltage (Volts)
1.4
1.2
0.8
0.2
0
0.4
1.0
0.6
VGS=
10V
7V
8V

I
D
(
O
n
)

-
O
n
-
S
t
a
t
e

D
r
a
i
n

C
u
r
r
e
n
t

(
A
m
p
s
)
VDS - Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)

R
D
S
(
O
N
)

-
D
r
a
i
n

S
o
u
r
c
e

R
e
s
i
s
t
a
n
c
e

(

)
1 2 3 4 5 6 7 8 9 10 20
6V
4V
3V
1.6
1.2
0.4
0
0.8
0 2 4 6 8 10
1.4
1.2
0.8
0.2
0
0.4
1.0
0.6
VDS=
25V
9V
1.4
1.0
0.6
0.2
5V
VGS=
10V
7V
8V
6V
4V
3V
9V
ID=
1A
0.5A
0.2A
1
10

100
Normalised RDS(on) and VGS(th) vs Temperature
N
o
r
m
a
l
i
s
e
d

R
D
S
(
o
n
)
a
n
d

V
G
S
(
t
h
)

-40 -20 0 20 40 60 80 120 100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
D
r
a
i
n
-
S
o
u
r
c
e

R
e
s
i
s
t
a
n
c
e

R
D
S
(
o
n
)

Gate Threshold Voltage VGS(th)
ID=-0.5A
T-Temperature (C)
0.4
-80 -60
ZVN3310A
3-379
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
=10
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
100 V
Continuous Drain Current at T
amb
=25C I
D
200 mA
Pulsed Drain Current I
DM
2 A
Gate-Source Voltage V
GS
20 V
Power Dissipation at T
amb
=25C P
tot
625 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 C
ELECTRICAL CHARACTERISTICS (at T
amb
=25C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
100 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.8 2.4 V ID=1mA, V
DS
=V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
1
50
A
A
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125C(2)
On-State Drain Current(1) I
D(on)
500 mA V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
10 V
GS
=10V,I
D
=500mA
Forward Transconductance(1)(2
)
g
fs
100 mS V
DS
=25V,I
D
=500mA
Input Capacitance (2) C
iss
40 pF
Common Source Output
Capacitance (2)
C
oss
15 pF V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
5 pF
Turn-On Delay Time (2)(3) t
d(on)
5 ns
V
DD
25V, I
D
=500mA
Rise Time (2)(3) t
r
7 ns
Turn-Off Delay Time (2)(3) t
d(off)
6 ns
Fall Time (2)(3) t
f
7 ns
E-Line
TO92 Compatible
ZVN3310A
3-378
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)

I
D
(
O
n
)

-
O
n
-
S
t
a
t
e

D
r
a
i
n

C
u
r
r
e
n
t

(
A
m
p
s
)
Transfer Characteristics
0 2 4 6 8 10
0 10 20 30 40 50
Saturation Characteristics
6
0
2
4
8
0 4 8 12 16 20
10
V
D
S
-
D
r
a
i
n

S
o
u
r
c
e


V
o
l
t
a
g
e

(
V
o
l
t
s
)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
5V
ID=
1A
0.5A
0.2A

I
D
(
O
n
)
-
O
n
-
S
t
a
t
e

D
r
a
i
n

C
u
r
r
e
n
t


(
A
m
p
s
)
VGS-Gate Source Voltage (Volts)
1.4
1.2
0.8
0.2
0
0.4
1.0
0.6
VGS=
10V
7V
8V

I
D
(
O
n
)

-
O
n
-
S
t
a
t
e

D
r
a
i
n

C
u
r
r
e
n
t

(
A
m
p
s
)
VDS - Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)

R
D
S
(
O
N
)

-
D
r
a
i
n

S
o
u
r
c
e

R
e
s
i
s
t
a
n
c
e

(

)
1 2 3 4 5 6 7 8 9 10 20
6V
4V
3V
1.6
1.2
0.4
0
0.8
0 2 4 6 8 10
1.4
1.2
0.8
0.2
0
0.4
1.0
0.6
VDS=
25V
9V
1.4
1.0
0.6
0.2
5V
VGS=
10V
7V
8V
6V
4V
3V
9V
ID=
1A
0.5A
0.2A
1
10

100
Normalised RDS(on) and VGS(th) vs Temperature
N
o
r
m
a
l
i
s
e
d

R
D
S
(
o
n
)
a
n
d

V
G
S
(
t
h
)

-40 -20 0 20 40 60 80 120 100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
D
r
a
in
-
S
o
u
r
c
e
R
e
s
is
t
a
n
c
e
R
D
S
(o
n
)
Gate Threshold Voltage VGS(th)
ID=-0.5A
T-Temperature (C)
0.4
-80 -60
ZVN3310A
3-379
TYPICAL CHARACTERISTICS
Transconductance v drain current
ID- Drain Current (Amps)
g
f
s
-
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
m
S
)

g
f
s
-
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
m
S
)

0
80
0
40
120
160
VDS=25V
0.2 0.4 0.6 0.8 1.0 1.2
0
80
0
40
120
160
VDS=25V
2 4 6 8 10 12
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C
-
C
a
p
a
c
i
t
a
n
c
e

(
p
F
)

Coss
Ciss
Crss
0 10 20 30 40 50
0
30
20
10
40
50
Q-Charge (nC)
Transconductance v gate-source voltage
VGS-Gate Source Voltage (Volts)
V
G
S
-
G
a
t
e

S
o
u
r
c
e

V
o
l
t
a
g
e

(
V
o
l
t
s
)

Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
VDS=
20V
ID=0.6A
50V 80V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
ZVN3310A
3-380