TM

FQP5N50C/FQPF5N50C
500V N-Channel MOSFET
General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

5A, 500V, RDS(on) = 1.4 @VGS = 10 V

Low gate charge ( typical 18nC)
Low Crss ( typical 15pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

D
!

G!
G DS

TO-220

TO-220F

GD S

FQP Series

FQPF Series

Absolute Maximum Ratings

Symbol
VDSS
ID

TC = 25C unless otherwise noted

Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current

FQP5N50C

FQPF5N50C
500

- Continuous (TC = 100C)

Units
V

5*

2.9

2.9 *

20 *

IDM

Drain Current

VGSS

Gate-Source Voltage

EAS

Single Pulsed Avalanche Energy

(Note 2)

IAR

Avalanche Current

(Note 1)

EAR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)

(Note 1)

7.3
4.5

-55 to +150

mJ
V/ns
W
W/C
C

300

dv/dt
PD
TJ, TSTG
TL

- Pulsed

(Note 1)

20

(Note 3)

- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

30

300

mJ

73
0.58

38
0.3

* Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol
RJC

Parameter
Thermal Resistance, Junction-to-Case

RJS

Thermal Resistance, Case-to-Sink Typ.

0.5

--

C/W

RJA

Thermal Resistance, Junction-to-Ambient

62.5

62.5

C/W

2003 Fairchild Semiconductor Corporation

FQP5N50C
1.71

FQPF5N50C
3.31

Units
C/W

Rev. A, April 2003

FQP5N50C/FQPF5N50C

QFET

Symbol

TC = 25C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max

Units

500

--

--

--

0.5

--

V/C

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

BVDSS
/
TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 A, Referenced to 25C

IDSS
IGSSF
IGSSR

VDS = 500 V, VGS = 0 V

--

--

VDS = 400 V, TC = 125C

--

--

10

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

--

100

nA

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

--

-100

nA

2.0

--

4.0

--

1.14

1.4

--

5.2

--

--

480

625

pF

--

80

105

pF

--

15

20

pF

--

12

35

ns

--

46

100

ns

--

50

110

ns

--

48

105

ns

--

18

24

nC

Zero Gate Voltage Drain Current

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

RDS(on)

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 2.5A

gFS

Forward Transconductance

VDS = 40 V, ID = 2.5A

(Note 4)

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 250 V, ID = 5A,

RG = 25
(Note 4, 5)

VDS = 400 V, ID = 5A,

VGS = 10 V
(Note 4, 5)

--

2.2

--

nC

--

9.7

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

ISM

--

--

20

VSD

Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 5 A
Drain-Source Diode Forward Voltage

--

--

1.4

trr

Reverse Recovery Time

--

263

--

ns

Qrr

Reverse Recovery Charge

--

1.9

--

VGS = 0 V, IS = 5 A,
dIF / dt = 100 A/s

(Note 4)

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.5 mH, IAS = 5A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

2003 Fairchild Semiconductor Corporation

Rev. A, April 2003

FQP5N50C/FQPF5N50C

Electrical Characteristics

FQP5N50C/FQPF5N50C

Typical Characteristics

VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :

ID, Drain Current [A]

10

10

ID, Drain Current [A]

10

150 C
o

25 C
o

-55 C

10

Notes :
1. VDS = 40V
2. 250 s Pulse Test

Notes :
1. 250 s Pulse Test
2. TC = 25

-1

10

-1

10
-1

10

10

10

10

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

4.5
1

10

3.5

IDR, Reverse Drain Current [A]

VGS = 10V

3.0
2.5
2.0

VGS = 20V
1.5
1.0

150
Notes :
1. VGS = 0V
2. 250 s Pulse Test

25

Note : TJ = 25
-1

0.5
0

10

15

10

0.2

0.4

0.6

0.8

1.0

1.2

1.4

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current
and Temperature

1200

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd

1000

12

10

800

Capacitance [pF]

10

Ciss
Coss

600

400

Notes ;
1. VGS = 0 V
2. f = 1 MHz

Crss
200

VGS, Gate-Source Voltage [V]

RDS(ON) [ ],
Drain-Source On-Resistance

4.0

VDS = 100V
VDS = 250V

VDS = 400V
6

2
Note : ID = 5A

0
-1
10

10

10

10

15

20

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2003 Fairchild Semiconductor Corporation

Rev. A, April 2003

FQP5N50C/FQPF5N50C

Typical Characteristics

(Continued)

1.2

3.0

BV DSS , (Normalized)
Drain-Source Breakdown Voltage

2.5

RDS(ON) , (Normalized)
Drain-Source On-Resistance

1.1

1.0

Notes :
1. VGS = 0 V
2. ID = 250 A

0.9

0.8
-100

-50

50

100

2.0

1.5

1.0
Notes :
1. VGS = 10 V
2. ID = 2.5 A

0.5

150

0.0
-100

200

-50

50

100

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

10

Operation in This Area

is Limited by R DS(on)

Operation in This Area

is Limited by R DS(on)

10

10 s

10 s

100 s

10

1 ms
100 ms 10 ms
DC

10

-1

10

100 s

10

ID, Drain Current [A]

ID, Drain Current [A]

150

1 ms
10 ms
100 ms
0

10

DC

-1

Notes :

10

Notes :

1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse

1. TC = 25 C
o

2. TJ = 150 C
3. Single Pulse
-2

10

-2

10

10

10

10

VDS, Drain-Source Voltage [V]

10

10

10

10

10

VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area

for FQP5N50C

Figure 9-2. Maximum Safe Operating Area

for FQPF5N50C

ID, Drain Current [A]

0
25

50

75

100

125

150

TC, Case Temperature []

Figure 10. Maximum Drain Current

vs Case Temperature

2003 Fairchild Semiconductor Corporation

Rev. A, April 2003

(Continued)

D = 0 .5

0 .2
0 .1
10

N o te s :
1 . Z J C (t) = 1 .7 1 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)

0 .0 5

-1

0 .0 2
0 .0 1

JC

(t), T h e rm a l R e s p o n s e

10

FQP5N50C/FQPF5N50C

Typical Characteristics

PDM

s in g le p u ls e

t1
t2
10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

D = 0 .5
10

0 .2
0 .1
N o te s :
1 . Z J C (t) = 3 .3 1 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)

0 .0 5
10

-1

0 .0 2

JC

(t), T h e rm a l R e s p o n s e

Figure 11. Transient Thermal Response Curve for FQP5N50C

0 .0 1

PDM

s in g le p u ls e

t1
10

t2

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for FQPF5N50C

2003 Fairchild Semiconductor Corporation

Rev. A, April 2003

FQP5N50C/FQPF5N50C

Gate Charge Test Circuit & Waveform

VGS

Same Type
as DUT

50K

Qg

200nF

12V

10V

300nF

VDS

VGS

Qgs

Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS

RL

VDS

90%

VDD

VGS
RG

VGS

DUT

10V

10%

td(on)

tr

td(off)

t on

tf
t off

Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD

L
VDS
BVDSS
IAS

ID
RG

VDD
DUT

10V
tp

2003 Fairchild Semiconductor Corporation

ID (t)
VDS (t)

VDD
tp

Time

Rev. A, April 2003

FQP5N50C/FQPF5N50C

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
_

I SD
L
Driver
RG

VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode
Forward Voltage Drop

2003 Fairchild Semiconductor Corporation

Rev. A, April 2003

TO-220
4.50 0.20
2.80 0.10
(3.00)

+0.10

1.30 0.05

18.95MAX.

(3.70)

3.60 0.10

15.90 0.20

1.30 0.10

(8.70)

(1.46)

9.20 0.20

(1.70)

9.90 0.20

1.52 0.10

0.80 0.10
2.54TYP
[2.54 0.20]

10.08 0.30

(1.00)

13.08 0.20

(45

1.27 0.10

+0.10

0.50 0.05

2.40 0.20

2.54TYP
[2.54 0.20]

10.00 0.20

Dimensions in Millimeters
2003 Fairchild Semiconductor Corporation

Rev. A, April 2003

FQP5N50C/FQPF5N50C

Package Dimensions

(Continued)

3.30 0.10

TO-220F
10.16 0.20

2.54 0.20

3.18 0.10

(7.00)

(1.00x45)

15.87 0.20

15.80 0.20

6.68 0.20

(0.70)

0.80 0.10
)
0

(3

9.75 0.30

MAX1.47

#1
+0.10

0.50 0.05

2.54TYP
[2.54 0.20]

2.76 0.20

2.54TYP
[2.54 0.20]

9.40 0.20

4.70 0.20

0.35 0.10

Dimensions in Millimeters
2003 Fairchild Semiconductor Corporation

Rev. A, April 2003

FQP5N50C/FQPF5N50C

Package Dimensions

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx
FACT
ActiveArray
FACT Quiet series
Bottomless
FAST
FASTr
CoolFET
CROSSVOLT FRFET
GlobalOptoisolator
DOME
EcoSPARK
GTO
E2CMOS
HiSeC
EnSigna
I2C
Across the board. Around the world.
The Power Franchise
Programmable Active Droop

ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
MSXPro
OCX
OCXPro
OPTOLOGIC
OPTOPLANAR

PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
SILENT SWITCHER
SMART START

SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2003 Fairchild Semiconductor Corporation

Rev. I2

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.